JPH11329736A - Optical modulation mirror - Google Patents
Optical modulation mirrorInfo
- Publication number
- JPH11329736A JPH11329736A JP13868198A JP13868198A JPH11329736A JP H11329736 A JPH11329736 A JP H11329736A JP 13868198 A JP13868198 A JP 13868198A JP 13868198 A JP13868198 A JP 13868198A JP H11329736 A JPH11329736 A JP H11329736A
- Authority
- JP
- Japan
- Prior art keywords
- light
- thin film
- photoconductive thin
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 38
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 230000005525 hole transport Effects 0.000 claims abstract description 9
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 30
- 239000010408 film Substances 0.000 claims description 11
- 239000012044 organic layer Substances 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 5
- PJQYNUFEEZFYIS-UHFFFAOYSA-N perylene maroon Chemical group C=12C3=CC=C(C(N(C)C4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)N(C)C(=O)C4=CC=C3C1=C42 PJQYNUFEEZFYIS-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 239000000969 carrier Substances 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- MZYHMUONCNKCHE-UHFFFAOYSA-N naphthalene-1,2,3,4-tetracarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=C(C(O)=O)C(C(O)=O)=C21 MZYHMUONCNKCHE-UHFFFAOYSA-N 0.000 abstract description 3
- 230000003321 amplification Effects 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 description 6
- 230000004297 night vision Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- SJHHDDDGXWOYOE-UHFFFAOYSA-N oxytitamium phthalocyanine Chemical compound [Ti+2]=O.C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 SJHHDDDGXWOYOE-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、有機ＥＬ素子の発
光原理を応用することにより、暗闇等で物を見ることが
できる光変調鏡に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light modulating mirror capable of observing an object in darkness or the like by applying the principle of light emission of an organic EL device.
【０００２】[0002]
【従来の技術】暗い場所で物を見るには、イメージコン
バータ(image converter) やイメージインテンシファイ
ヤー(image intensifier, I.I.) が知られている。2. Description of the Related Art An image converter and an image intensifier (II) are known for viewing an object in a dark place.
【０００３】Ｉ．Ｉ．は図３に示すような構造である。
被写体１００からの光は対物レンズ１０１を経て光電面
１０２に入る。光電面１０２は光を電子に変換して放出
する。電子は、高電圧が印加されている筒型の加速電極
１０３内で加速され、ＭＣＰ１０４（マイクロチャンネ
ルプレート）の入力面に結像する。電子はＭＣＰ１０４
において増倍され、蛍光面１０５に衝突して再び光学像
となり、接眼レンズ１０６を介して観察者の目に達す
る。[0003] I. Has a structure as shown in FIG.
Light from the subject 100 enters the photoelectric surface 102 via the objective lens 101. The photocathode 102 converts light into electrons and emits them. The electrons are accelerated in the cylindrical acceleration electrode 103 to which a high voltage is applied, and form an image on the input surface of the MCP 104 (micro channel plate). The electron is MCP104
, And collides with the fluorescent screen 105 to become an optical image again, and reaches the eyes of the observer via the eyepiece 106.
【０００４】イメージコンバータは、人間の目に感じな
い赤外線、紫外線等の照明を使い、その反射光像を入射
させて可視光像に変換するものであり、基本的な構造は
図３に示したＩ．Ｉ．からＭＣＰ１０４を除いたものと
いえる。即ち、不可視光に感度を持つ光電面と、可視光
像を出す蛍光面とを組み合わせ、不可視像を可視像に変
換するものである。イメージコンバータも駆動には高電
圧が必要である。[0004] The image converter converts the reflected light image into a visible light image by using illumination of infrared rays, ultraviolet rays, or the like which are invisible to the human eye. The basic structure is shown in FIG. I. I. From which the MCP 104 is excluded. That is, the invisible image is converted into a visible image by combining a photoelectric surface having sensitivity to invisible light and a fluorescent surface that emits a visible light image. An image converter also requires a high voltage for driving.
【０００５】[0005]
【発明が解決しようとする課題】従来、暗視鏡等に用い
られていたイメージコンバータやイメージインテンシフ
ァイヤーは、電子の加速のために数百〜数千Ｖもの高電
圧が必要であり、そのための装置にかかるコストが大き
く、また高電圧に対する安全性が必要であった。Conventionally, image converters and image intensifiers which have been used for night vision or the like require a high voltage of several hundreds to several thousand volts for accelerating electrons. The cost of the device is large, and safety against high voltage is required.
【０００６】さらに、イメージインテンシファイヤーの
場合には加速用の電極が長い筒型（通常、数十ｍｍ程
度）であり、装置全体が大きくなっていた。さらに、高
価なＭＣＰが必要なために高価であった。Further, in the case of the image intensifier, the electrode for acceleration is a long cylindrical type (generally, about several tens of mm), and the whole apparatus is large. Furthermore, it was expensive due to the need for expensive MCP.
【０００７】本発明は、従来使用されていたＭＣＰのよ
うな高価な素子を必要とせず、さらに駆動に高電圧を必
要とせず、全体の構成がコンパクトな暗視鏡等の用途に
適した光変調鏡を提供することを目的としている。The present invention does not require an expensive element such as a conventionally used MCP, does not require a high voltage for driving, and has a compact overall structure suitable for applications such as night vision. It is intended to provide a modulating mirror.
【０００８】[0008]
【課題を解決するための手段】請求項１に記載された光
変調鏡（１）は、対象物からの光が入射する透光性の第
１電極（１６）と、前記第１電極に入射した光を電子に
変換する光導電性薄膜（１５）と、前記光導電性薄膜に
積層された有機ＥＬ層（１４，１３，１２）と、前記有
機ＥＬ層の前記光導電性薄膜と反対側に設けられた透光
性の第２電極（１１）と、を有する光光変換素子（４）
を有している。According to a first aspect of the present invention, there is provided an optical modulator comprising: a first light-transmitting electrode for receiving light from an object; A photoconductive thin film (15) for converting the converted light into electrons, an organic EL layer (14, 13, 12) laminated on the photoconductive thin film, and an opposite side of the organic EL layer to the photoconductive thin film. A light-to-light conversion element (4) having a light-transmitting second electrode (11)
have.
【０００９】請求項２に記載された光変調鏡は、請求項
１記載の光変調鏡（１）において、前記光光変換素子に
結像を入射させる対物レンズ（３）と、前記光光変換素
子から出射した光を正立像にする中間レンズ（６）と、
前記中間レンズからの光を拡大する接眼レンズ（７）
と、前記光光変換素子の第１電極と第２電極との間に電
圧を印加することにより入射した光に対して出射した光
の強度を増大する電源回路（５）とを有することを特徴
としている。According to a second aspect of the present invention, in the light modulation mirror according to the first aspect, the objective lens (3) for causing an image to be incident on the light-to-light conversion element and the light-to-light conversion. An intermediate lens (6) for converting the light emitted from the element into an erect image,
Eyepiece for expanding light from the intermediate lens (7)
And a power supply circuit (5) for increasing the intensity of the emitted light with respect to the incident light by applying a voltage between the first electrode and the second electrode of the light-to-light conversion element. And
【００１０】請求項３に記載された光変調鏡は、請求項
１又は２記載の光変調鏡（１）において、前記導電性薄
膜はキャリア生成膜を有し、キャリア生成膜で生成され
たキャリアにより、所定電界下において前記第１電極か
ら光導電性薄膜への電荷注入を誘起することを特徴とし
ている。[0010] According to a third aspect of the present invention, in the light modulating mirror according to the first or second aspect, the conductive thin film has a carrier generation film, and the carrier generated by the carrier generation film. Thus, charge injection from the first electrode to the photoconductive thin film is induced under a predetermined electric field.
【００１１】請求項４に記載された光変調鏡は、請求項
１又は２又は３記載の光変調鏡（１）において、前記第
１電極（１６）が金の薄膜であり、前記光導電性薄膜
（１５）がＮＴＣＤＡであり、前記キャリア生成膜（１
４）がＭｅ−ＰＴＣであり、前記発光層（１３）がｔ−
ＢｕＰｈ−ＰＴＣであり、前記ホール輸送層（１２）が
ＰＤＡであることを特徴としている。According to a fourth aspect of the present invention, in the light modulating mirror according to the first or second or third aspect, the first electrode is a thin film of gold, and The thin film (15) is NTCDA, and the carrier generation film (1)
4) is Me-PTC, and the light emitting layer (13) is t-
BuPh-PTC, wherein the hole transport layer (12) is a PDA.
【００１２】請求項５に記載された光変調鏡は、請求項
１又は２又は３記載の光変調鏡（１）において、前記光
導電性薄膜が、異なる波長の光に反応する複数の層から
形成されていることを特徴としている。According to a fifth aspect of the present invention, there is provided the light modulating mirror according to the first or second or third aspect, wherein the photoconductive thin film is formed of a plurality of layers responsive to light of different wavelengths. It is characterized by being formed.
【００１３】請求項６に記載された光変調鏡は、請求項
２又は３又は４記載の光変調鏡（１）において、前記電
源回路に、大電流が流れた際に電圧を制御する保護手段
が設けられたことを特徴としている。According to a sixth aspect of the present invention, in the light modulating mirror according to the second or third or fourth aspect, the protection means controls a voltage when a large current flows through the power supply circuit. Is provided.
【００１４】[0014]
【発明の実施の形態】本発明の実施の形態の一例を図１
及び図２を参照して説明する。本例の光変調鏡１の全体
の構造を図１を参照して説明する。図１に示すように、
本例の光変調鏡１は、一連の光学・電子部品を筐体２の
内部に収納配置した構成になっている。まず、筐体２の
開口した先端には、対物レンズ３が設けられている。対
物レンズ３の後方には、有機ＥＬ素子の原理を応用した
光光変換素子４が設けられている。光光変換素子４は、
直流電源５に接続されており、後述するように入射光を
増倍して出射する機能を有している。光光変換素子４の
後方には、光光変換素子４から出射した光像を倒立像を
成立像とする中間レンズ６がある。中間レンズ６の後方
には、中間レンズ６による結像を拡大する接眼レンズ７
がある。FIG. 1 shows an example of an embodiment of the present invention.
This will be described with reference to FIG. The overall structure of the light modulation mirror 1 of the present embodiment will be described with reference to FIG. As shown in FIG.
The light modulation mirror 1 of this embodiment has a configuration in which a series of optical and electronic components are housed and arranged inside a housing 2. First, an objective lens 3 is provided at an open end of the housing 2. Behind the objective lens 3, a light-to-light conversion element 4 applying the principle of an organic EL element is provided. The light-to-light conversion element 4
It is connected to the DC power supply 5 and has a function of multiplying and emitting incident light as described later. Behind the light-to-light conversion element 4, there is an intermediate lens 6 that turns the light image emitted from the light-to-light conversion element 4 into an inverted image. Behind the intermediate lens 6, an eyepiece 7 for enlarging an image formed by the intermediate lens 6.
There is.
【００１５】前記光光変換素子４の構造を図２を参照し
て説明する。光光変換素子４は、発光層を含む１層以上
の有機層を２つの電極の間に積層してなる有機ＥＬと、
有機物質から構成された光導電性薄膜とを組み合わせた
多層構造の素子である。The structure of the light-to-light conversion element 4 will be described with reference to FIG. The light-to-light conversion element 4 includes an organic EL in which one or more organic layers including a light emitting layer are stacked between two electrodes,
This is a device having a multilayer structure in which a photoconductive thin film made of an organic substance is combined.
【００１６】光を出力する側の基体として、透光性の基
板であるガラス基板１０が設けられている。ガラス基板
１０の上には透光性の陽極１１が形成されている。本例
の陽極１１はＩＴＯ（Indium Tin Oxide）からなる。A glass substrate 10, which is a light-transmitting substrate, is provided as a substrate on the light output side. A translucent anode 11 is formed on the glass substrate 10. The anode 11 of this example is made of ITO (Indium Tin Oxide).
【００１７】陽極１１の上には、ホール輸送層１２が形
成されている。本例のホール輸送層１２は化学式（１）
に示すＰＤＡである。その膜厚は３０ｎｍである。On the anode 11, a hole transport layer 12 is formed. The hole transport layer 12 of this example has the chemical formula (1)
Is a PDA shown in FIG. Its thickness is 30 nm.
【００１８】[0018]
【化１】 Embedded image
【００１９】ホール輸送層１２の上には、発光層１３が
形成されている。本例の発光層１３は、化学式（２）に
示すｔ−ＢｕＰｈ−ＰＴＣである。その膜厚は７０ｎｍ
である。On the hole transport layer 12, a light emitting layer 13 is formed. The light emitting layer 13 of this example is t-BuPh-PTC represented by the chemical formula (2). The film thickness is 70 nm
It is.
【００２０】[0020]
【化２】 Embedded image
【００２１】発光層１３の上には、キャリア生成層１４
が形成されている。本例のキャリア生成層１４は、化学
式（３）に示すＭｅ−ＰＴＣからなる。その膜厚は３０
０ｎｍである。On the light emitting layer 13, a carrier generation layer 14
Are formed. The carrier generation layer 14 of this example is made of Me-PTC represented by chemical formula (3). The film thickness is 30
0 nm.
【００２２】[0022]
【化３】 Embedded image
【００２３】キャリア生成層１４の上には、光導電性薄
膜１５が形成されている。光導電性薄膜１５は、入射し
た光を電子に変換する。本例の光導電性薄膜１５は、化
学式（４）に示すナフタレンテトラカルボン酸（ＮＴＣ
ＤＡ）からなる。その膜厚は５０ｎｍである。On the carrier generation layer 14, a photoconductive thin film 15 is formed. The photoconductive thin film 15 converts incident light into electrons. The photoconductive thin film 15 of this example is made of naphthalenetetracarboxylic acid (NTC) represented by the chemical formula (4).
DA). Its film thickness is 50 nm.
【００２４】[0024]
【化４】 Embedded image
【００２５】光導電性薄膜１５の上には、透光性を有す
る第１電極としての陰極１６がある。この陰極１６は、
前記対物レンズ３に対面している。この陰極１６は、金
の薄膜からなる。陰極１６は適当な膜厚に形成されてお
り、十分な透光性を有している。対物レンズ３からの光
は、陰極１６を透過して前記光導電性薄膜１５に到達す
る。On the photoconductive thin film 15, there is a cathode 16 as a first electrode having a light transmitting property. This cathode 16
It faces the objective lens 3. The cathode 16 is made of a gold thin film. The cathode 16 is formed to have an appropriate film thickness and has a sufficient translucency. Light from the objective lens 3 passes through the cathode 16 and reaches the photoconductive thin film 15.
【００２６】このように、有機ＥＬ素子と光導電性薄膜
１５を組み合わせた本例の光光変換素子４は、一般的に
次のような機能を有する。 印加電圧により入射光に大して出力光の強度を増倍す
る。 発光層１３の材料により出力光の波長を制御できる。 光導電性薄膜１５を構成する材料の種類により、入射
光の波長を制御できる。As described above, the light-to-light conversion element 4 of this embodiment in which the organic EL element and the photoconductive thin film 15 are combined generally has the following functions. The intensity of the output light is multiplied by the applied voltage to be larger than that of the incident light. The wavelength of the output light can be controlled by the material of the light emitting layer 13. The wavelength of the incident light can be controlled by the type of the material constituting the photoconductive thin film 15.
【００２７】前述のように構成された本例の光光変換素
子４において、陰極１６と陽極１１の間に電圧を印加
し、陰極１６側から６００ｎｍの単色光を照射すると、
発光層１３の赤色のＥＬ発光がガラス基板を通して出力
された。これは、光導電性薄膜１５のＮＴＣＤＡと陰極
１６のＡｕとの界面で起こる光電流増倍によって大量に
注入された電子が、陽極１１のＩＴＯからホール輸送層
１２のＰＤＡを介して注入されたホールと、発光層１３
のｔ−ＢｕＰｈ−ＰＴＣで再結合することによって出力
された光である。キャリア生成層１４のＭｅ−ＰＴＣで
発生したホールは、陰極１６（Ａｕ）と光導電性薄膜１
５（ＮＴＣＤＡ）の界面に供給されてトラップされ、光
電流増倍を引き起こす。When a voltage is applied between the cathode 16 and the anode 11 and the monochromatic light of 600 nm is irradiated from the cathode 16 side in the light-to-light conversion element 4 of the present embodiment configured as described above,
The red EL light emission of the light emitting layer 13 was output through the glass substrate. This is because electrons injected in large quantities by photocurrent multiplication occurring at the interface between NTCDA of the photoconductive thin film 15 and Au of the cathode 16 were injected from the ITO of the anode 11 through the PDA of the hole transport layer 12. Hole and light emitting layer 13
Is light output by recombining with t-BuPh-PTC. The holes generated by the Me-PTC of the carrier generation layer 14 are formed by the cathode 16 (Au) and the photoconductive thin film 1.
5 (NTCDA) is supplied to the interface and trapped, causing photocurrent multiplication.
【００２８】入力光の強度を１０μＷｃｍ-2とした時、
印加電圧約１０Ｖから出力光が得られた。印加電圧が３
０Ｖの時、利得が１を越え、印加電圧３５Ｖで約２倍、
４０Ｖで約３倍の光増幅が得られた。When the intensity of the input light is 10 μWcm −2 ,
Output light was obtained from an applied voltage of about 10V. Applied voltage is 3
At 0V, the gain exceeds 1 and about twice at 35V applied voltage.
At 40 V, about 3-fold light amplification was obtained.
【００２９】図２に示すように、本例の光光変換素子４
は電源回路に電流制御回路２０を備えており、電流制御
回路２０に流れた電流に応じて電圧の供給を停止するこ
とができる。即ち、強い光が入射して回路に大電流が流
れると有機層が破壊されるおそれがあるが、本例ではそ
のような場合に電圧の印加を停止して装置を保護する保
護手段を有している。例えば、電流計が所定以上の電流
を検知した時に、スイッチを作動させて電圧供給回路を
遮断するようにしてもよい。As shown in FIG. 2, the light-to-light conversion element 4 of this embodiment
Has a current control circuit 20 in a power supply circuit, and can stop supplying a voltage in accordance with the current flowing through the current control circuit 20. That is, when a strong current is applied to the circuit and a large current flows, the organic layer may be destroyed. In this case, a protection means for stopping the application of the voltage and protecting the device is provided in such a case. ing. For example, when the ammeter detects a current equal to or greater than a predetermined value, the switch may be operated to cut off the voltage supply circuit.
【００３０】本例の光変調鏡１によれば、図１において
物体Ａからの微弱な光を対物レンズ３によって光光変換
素子４に結像させ、この素子４によって像を変調（強度
増倍、波長変換）させ、中間レンズ６及び接眼レンズ７
を通して正立拡大像を得ることができる。According to the light modulation mirror 1 of this embodiment, in FIG. 1, weak light from the object A is focused on the light-to-light conversion element 4 by the objective lens 3, and the image is modulated (intensity multiplication) by this element 4. , Wavelength conversion), the intermediate lens 6 and the eyepiece 7
, A magnified erect image can be obtained.
【００３１】本例では、光導電性薄膜１５にＮＴＣＤＡ
を使用したが、物質の種類を選択すれば任意の波長の光
を所望の波長の可視光に変換し、強度の増倍も任意に行
うことができる。例えば、不可視領域光の入射によって
電子を放出する光導電性薄膜を用いれば、不可視光であ
る赤外線や紫外線を可視光に変換して観察できる光変調
鏡とすることもできる。In this embodiment, the photoconductive thin film 15 is made of NTCDA.
However, if the type of substance is selected, light of an arbitrary wavelength can be converted into visible light of a desired wavelength, and the intensity can be multiplied arbitrarily. For example, if a photoconductive thin film that emits electrons when incident light in the invisible region is used is used, a light modulation mirror that can convert infrared light or ultraviolet light, which is invisible light, into visible light and observe it can be used.
【００３２】また、光導電性薄膜は入射光の波長に対し
て反応する波長が短いので、反応する波長の異なる層を
複数層重ねることで、反応波長を広くすることができ
る。例えば、ＮＴＣＤＡは４００ｎｍ近辺のものに反応
し、光電流倍増現象を起こす。これにキャリア生成膜と
してＭｅ−ＰＴＣを加えれば、６００ｎｍの波長にも反
応するので、光導電性薄膜としての反応波長が広がる。Since the photoconductive thin film has a short wavelength that responds to the wavelength of the incident light, the reaction wavelength can be broadened by stacking a plurality of layers having different wavelengths. For example, NTCDA reacts to those near 400 nm and causes a photocurrent doubling phenomenon. If Me-PTC is added to this as a carrier generation film, it reacts also to a wavelength of 600 nm, so that the reaction wavelength as a photoconductive thin film is widened.
【００３３】また、ペリレン顔料、キナクリドン、フタ
ロシアニン顔料（例えばチタニルフタロシアニン（Ｔｉ
ＯＰＣ））、ナフタレンテトラカルボン酸（ＮＴＣＤ
Ａ）等がある。ＴｉＰＯは、６６０ｎｍから８２０ｎｍ
の赤外領域まで反応する等、フタロシアニン顔料は反応
波長域が様々得られる。Further, perylene pigments, quinacridones, and phthalocyanine pigments (for example, titanyl phthalocyanine (Ti
OPC)), naphthalenetetracarboxylic acid (NTCD
A). TiPO is 660 nm to 820 nm
Phthalocyanine pigments can be obtained in various reaction wavelength ranges.
【００３４】[0034]
【発明の効果】本発明によれば、有機ＥＬ素子と光導電
性薄膜を組み合わせた光光変換素子を用いているので、
従来の暗視鏡のように高価なＭＣＰを使用することな
く、暗視鏡の用途にも適した安価な光変調鏡を構成でき
る。According to the present invention, since a light-to-light conversion element combining an organic EL element and a photoconductive thin film is used,
An inexpensive light modulator suitable for night vision can be configured without using an expensive MCP unlike conventional night vision.
【００３５】また、本発明の光変調鏡は、光光変換素子
の厚さは数ミリ程度であり、またその構造からある程度
の長さが必要な加速電極が不用なので、コンパクトで軽
量な構成にすることができる。Further, the light modulation mirror of the present invention has a compact and lightweight structure because the light-to-light conversion element has a thickness of about several millimeters and does not require an accelerating electrode that requires a certain length due to its structure. can do.
【００３６】また、光光変換素子の駆動電圧は数十Ｖ程
度であり、高電圧を使用する従来の暗視鏡に比べて安全
である。The driving voltage of the light-to-light conversion element is about several tens of volts, which is safer than a conventional night-vision using a high voltage.
【００３７】さらに、光導電性材料の選択により、不可
視領域の入力光を発光層で可視光に変換できる可視光変
換鏡を実現することができる。Further, by selecting a photoconductive material, it is possible to realize a visible light conversion mirror capable of converting input light in an invisible region into visible light by a light emitting layer.
【図１】本発明の実施の形態の一例である光変調鏡の模
式的な断面図である。FIG. 1 is a schematic sectional view of a light modulator according to an embodiment of the present invention.
【図２】本発明の実施の形態の一例における光光変換素
子の断面図である。FIG. 2 is a cross-sectional view of a light-to-light conversion element according to an example of an embodiment of the present invention.
【図３】ＭＣＰを利用した従来のイメージインテンシフ
ァイヤーの模式的な断面図である。FIG. 3 is a schematic cross-sectional view of a conventional image intensifier using an MCP.
１ 光変調鏡 ３ 対物レンズ ５ 電源回路を構成する直流電源 ６ 中間レンズ ７ 接眼レンズ １１ 第２電極としての陽極 １２ 有機層であるホール輸送層 １３ 有機層である発光層 １４ 有機層であるキャリア生成層 １５ 光導電性薄膜 １６ 第１電極である陰極 ２０ 保護手段の一部を構成する電流計 DESCRIPTION OF SYMBOLS 1 Light modulation mirror 3 Objective lens 5 DC power supply constituting a power supply circuit 6 Intermediate lens 7 Eyepiece 11 Anode as second electrode 12 Hole transport layer as organic layer 13 Light emitting layer as organic layer 14 Carrier generation as organic layer Layer 15 Photoconductive thin film 16 Cathode as first electrode 20 Ammeter forming part of protection means
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０５Ｂ 33/08 Ｈ０５Ｂ 33/26 Ｚ 33/14 Ｈ０１Ｌ 31/08 Ｔ 33/26 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H05B 33/08 H05B 33/26 Z 33/14 H01L 31/08 T 33/26
Claims (6)
電極と、前記第１電極に入射した光を電気変換する光導
電性薄膜と、前記光導電性薄膜からの電気が流入する有
機ＥＬ層と、前記有機層の前記光導電性薄膜と反対側に
設けられた透光性の第２電極と、を有する光光変換素子
を備えた光変調鏡。1. A light-transmitting first light-entering light from an object.
An electrode, a photoconductive thin film that electrically converts light incident on the first electrode, an organic EL layer into which electricity from the photoconductive thin film flows, and an opposite side of the organic layer from the photoconductive thin film. A light modulation mirror comprising a light-to-light conversion element having a light-transmitting second electrode provided.
物レンズと、前記光光変換素子から出射した光を正立像
にする中間レンズと、前記中間レンズからの光を拡大す
る接眼レンズと、前記光光変換素子の第１電極と第２電
極との間に電圧を印加することにより入射した光に対し
て出射した光の強度を増大する電源回路と、を有する請
求項１記載の光変調鏡。2. An objective lens for causing an image to be incident on the light-to-light conversion element, an intermediate lens for turning light emitted from the light-to-light conversion element into an erect image, and an eyepiece for enlarging light from the intermediate lens. 2. The light according to claim 1, further comprising: a power supply circuit for increasing the intensity of emitted light with respect to the incident light by applying a voltage between the first electrode and the second electrode of the light-light conversion element. Modulating mirror.
し、キャリア生成膜で生成されたキャリアにより、所定
電界下において前記第１電極から光導電性薄膜への電荷
注入を誘起することを特徴とする請求項１又は２記載の
光変調鏡。3. The method according to claim 1, wherein the conductive thin film has a carrier generation film, and the carriers generated by the carrier generation film induce charge injection from the first electrode to the photoconductive thin film under a predetermined electric field. The light modulation mirror according to claim 1 or 2, wherein
導電性薄膜がＮＴＣＤＡであり、前記キャリア生成膜が
Ｍｅ−ＰＴＣであり、前記発光層がｔ−ＢｕＰｈ−ＰＴ
Ｃであり、前記ホール輸送層がＰＤＡである請求項１又
は２又は３記載の光変調鏡。4. The first electrode is a gold thin film, the photoconductive thin film is NTCDA, the carrier generation film is Me-PTC, and the light emitting layer is t-BuPh-PT
4. The light modulator according to claim 1, wherein the hole modulation layer is C, and the hole transport layer is a PDA.
反応する複数の層から形成されていることを特徴とする
請求項１又は２又は３記載の光変調鏡。5. The light modulation mirror according to claim 1, wherein the photoconductive thin film is formed of a plurality of layers that respond to light of different wavelengths.
圧を制御する保護手段が設けられた請求項２又は３又は
４記載の光変調鏡。6. The optical modulation mirror according to claim 2, wherein the power supply circuit is provided with protection means for controlling a voltage when a large current flows.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13868198A JPH11329736A (en) | 1998-05-20 | 1998-05-20 | Optical modulation mirror |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13868198A JPH11329736A (en) | 1998-05-20 | 1998-05-20 | Optical modulation mirror |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11329736A true JPH11329736A (en) | 1999-11-30 |
Family
ID=15227628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13868198A Pending JPH11329736A (en) | 1998-05-20 | 1998-05-20 | Optical modulation mirror |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11329736A (en) |
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