CN100424897C - Gallium nitride-base infrared visable wavelength conversion detector - Google Patents
Gallium nitride-base infrared visable wavelength conversion detector Download PDFInfo
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- CN100424897C CN100424897C CNB2005100300628A CN200510030062A CN100424897C CN 100424897 C CN100424897 C CN 100424897C CN B2005100300628 A CNB2005100300628 A CN B2005100300628A CN 200510030062 A CN200510030062 A CN 200510030062A CN 100424897 C CN100424897 C CN 100424897C
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- infrared
- quantum well
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Abstract
The present invention discloses an infrared-visible wavelength converting detector, which is made of gallium nitride (GaN) base material and can couple a multi-quantum well infrared detector and a light emitting diode on the same chip. The multi-quantum well infrared detector (QWIP) can convert infrared radiation signals into infrared electrooptical signals, and the infrared electrooptical signals are converted into optical signals of a visible waveband via the light emitting diode. The present invention has the advantages of realizing the upconversion of biasing voltage lower longwave thermal infrared to a visible light waveband, users can directly observe with eyes, and the present invention simplifies the structure of detecting systems. The material preparation of the present invention device has the advantages of mature technique and good material homogeneity.
Description
Technical field
The present invention relates to Infrared Detectors and light-emitting diode, specifically be meant by gallium nitride (GaN) sill is made Infrared Detectors and light-emitting diode series connection are coupling in the infrared-visable wavelength conversion detector on the chip piece.
Background technology
Traditional Infrared Detectors adopts focal plane array technology more.The signal of each photodetection unit is sent into outside silicon reading circuit in the array, and converts vision signal output to.Each photosensitive unit of this structural requirement forms a corresponding POI on the silicon reading circuit.The information translation that therefore will exactly focal plane array be listed is to the interlink node of correspondingly huge amount, this structure has proposed very high requirement to interconnected, refrigeration power consumption, the reading circuit of device, make that also the integrated system between this different materials is expensive and unreliable, thermal shock effect with non-kind of refrigeration cycle process especially is vulnerable to freeze.
In recent years, along with the maturation of GaN based quantum well material preparation process and led technology, the upconverter spare of the light-emitting diode of the Infrared Detectors of feasible series connection growing GaN/AlGaN quantum well sub-band transition and GaN base single quantum well band-to-band transition becomes possibility.This device can convert infrared light to human eye the most responsive green glow by effective coupling of GaN based quantum well Infrared Detectors and light-emitting diode, realizes the direct observation of human eye.It both had more ripe material preparation process and better material uniformity than arrowband material HgCdTe device; Interconnected and the big refrigerating capacity needs of problems of the reading circuit of having avoided general Infrared Detectors to face has again also been save common mid and far infrared based on the GaAs/AlGaAs quantum well and has been transformed into the required CCD imaging device of near-infrared, has simplified system configuration, has reduced cost.
Summary of the invention
Based on above-mentioned existing situation, the objective of the invention is to propose a kind of multiple quantum well infrared detector of GaN sill and the infrared-visable wavelength conversion detector of visible light emitting diode series coupled.
For achieving the above object, GaN base of the present invention is infrared-and visable wavelength conversion detector comprises substrate 1, be arranged in order growth lower electrode layer 2, multiple quantum well infrared detector 3, Al on substrate
aGa
1-a N transition zone 4, single quantum well light-emitting diode 5, upper electrode layer 6.
Said multiple quantum well infrared detector 3 is by the alternating growth Al in 50 cycles
bGa
1-bN barrier layer/GaN potential well layer is formed, and adds one deck Al at last
bGa
1-bThe N barrier layer finishes.GaN potential well layer and Al
bGa
1-bThe bed thickness of N barrier layer is relevant with the infrared wavelength that will survey with the value of b.
Said single quantum well light-emitting diode 5 is successively by In
xGa
1-xN barrier layer, In
yGa
1-yActive potential well layer of N and Al
aGa
1-aThe N barrier layer is formed.The emission wavelength of light-emitting diode can be by regulating unadulterated In
yGa
1-yY value in the N active layer, from 0.2 to 0.7, make it change emission wavelength from the blueness to the yellow.
The present invention adopts Al
bGa
1-bN/GaN is as Infrared Detectors Multiple Quantum Well growth material, its reason is that it has bigger conduction band band rank, can be so that the absorbing wavelength of intersubband transitions has than large span (0.7 micron～14 microns), by regulating GaN quantum well thickness, the AlGaN barrier height, the energy that can make GaN quantum well energy interband is just corresponding to the infrared radiation photon energy that is detected, and first excited state is in the accurate bound state that resonates with potential barrier or is higher than in the continuous state of potential barrier simultaneously, promptly can be used for infrared acquisition.In the single quantum well green light LED, utilize active potential well layer In
yGa
1-yThe energy gap of N with the In content change (1.9～3.5eV), suitably regulate component, can realize the most responsive green emission of interband human eye, can make the light-emitting diode of green light band.But so select both grown quantum trap infrared detectors of GaN sill, can prepare the light-emitting diode of green light band again, can fine realization be coupled integrated.
The groundwork process of device of the present invention is: when adding constant bias at these series connection device two ends, this bias voltage will act on multiple quantum well infrared detector (QWIP) device and green light LED (LED) device simultaneously.When infrared light entered QWIP by optical system, QWIP absorbed infrared radiation and causes that sub-band transition produces movably free electron.The part of these electronics is injected LED under electric field action, in active area and the hole-recombination of LED, send visible light.Because QWIP is the guide type device, when absorbing the infrared radiation of varying strength, the reduction of its resistance value is also different, so be added in the also corresponding difference of the voltage at LED two ends, causes the LED luminous intensity also different.So if the radiation of incident is inhomogeneous, the electronics of QWIP causes that the visible light intensity of output correspondingly is also inhomogeneous after injecting LED.Promptly under the situation of no obvious optics cross-talk, the spatial distribution of output green glow has repeated the distribution of photogenerated current among the QWIP, has also repeated the spatial distribution of input infrared radiation in turn.By the no photosensitive components and parts of this series connection, realized of the go up conversion of thermal infrared photon in brief, promptly realized infrared image is converted to the green light band image that eyes can directly be observed to visible light green glow photon.
Quantum trap infrared detector in this upconverter spare both can be the N type, also can be the P type, need only note corresponding the getting final product of institute's biasing and LED end.But because the transition selection rule, N type QWIP thereon etched diffraction grating so that the infrared light of vertical incidence is able to effective absorption.
Device of the present invention has following good effect and advantage:
1. compare to general mid and far infrared and be transformed into the needed CCD imaging device of near infrared upconverter spare, and device human eye of the present invention can directly be observed, and has simplified system configuration.
2. compare to traditional Infrared Detectors, the photosensitive unit that device of the present invention need not to separate has avoided the Si reading circuit, thereby does not relate to the circuit interconnects problem, avoid common focal plane device to need the problem of big refrigerating capacity, reduced technical difficulty and cost that device prepares.
3. device material therefor mature preparation process of the present invention, material homogeneity is good.
Description of drawings
Fig. 1 implements simplified schematic diagram for the 26S Proteasome Structure and Function of detector of the present invention.
Fig. 2 is being with and the physical process schematic diagram of multiple quantum well infrared detector-green light LED.
Embodiment
Infrared-visable wavelength conversion detector with N type QWIP and green light LED series coupled is embodiment below, wherein the infrared absorption peak of N type QWIP is set near 2.9 microns, the peak wavelength of the EL spectrum of LED is described in further detail the specific embodiment of the present invention in conjunction with the accompanying drawings at 525nm:
Detector of the present invention is the typical technology that utilizes epitaxial growth of semiconductor material, and as molecular beam epitaxy technique, metal organic chemical vapor deposition technology etc. are at Al
2O
3Be arranged in order growth on the Sapphire Substrate 1:
N*-GaN lower electrode layer 2;
The thick Al of 10nm in 50 cycles of alternating growth
0.35Ga
0.65N barrier layer (51 layers) and the thick GaN potential well layer of 3.5nm (50 layers), wherein the doping content in the GaN quantum well is 8*10
17Cm
-3, form the Infrared Detectors 3 of a Multiple Quantum Well thus;
The Al that 100nm is thick
0.1Ga
0.9 N transition zone 4;
Then be the thick N type In of 50nm
0.05Ga
0.95The unadulterated In that N barrier layer and 2nm are thick
0.43Ga
0.57The P type Al of N active layer and 100nm
0.1Ga
0.9The N barrier layer forms a single quantum well light-emitting diode 5;
Then be the P type GaN upper electrode layer 6 of 200nm, and etch grating layer 7 thereon, finish the preparation of infrared-visable wavelength conversion detector.
Present embodiment selects single quantum well LED to come from single quantum well than the LED of double-heterostructure higher luminous intensity and colorimetric purity to be arranged.
Claims (2)
1. a gallium nitride-base infrared visable wavelength conversion detector comprises substrate (1), it is characterized in that:
On substrate (1), be arranged in order growth lower electrode layer (2), multiple quantum well infrared detector (3), Al
aGa
1-aN transition zone (4), single quantum well light-emitting diode (5), upper electrode layer (6);
Said multiple quantum well infrared detector (3) is by the alternating growth Al in 50 cycles
bGa
1-bN barrier layer/GaN potential well layer adds one deck Al at last
bGa
1-bThe N barrier layer is formed; GaN potential well layer and Al
bGa
1-bThe bed thickness of N barrier layer is relevant with the infrared wavelength that will survey with the value of b;
Said single quantum well light-emitting diode (5) is successively by In
xGa
1-xN barrier layer, In
yGa
1-yActive potential well layer of N and Al
aGa
1-aThe N barrier layer is formed, and the emission wavelength of light-emitting diode can be by regulating unadulterated In
yGa
1-yY value in the N active layer, from 0.2 to 0.7, make it change emission wavelength from the blueness to the yellow.
2. according to a kind of gallium nitride-base infrared visable wavelength conversion detector of claim 1, it is characterized in that: said multiple quantum well infrared detector both can be the N type, also can be the P type, if the N type then needs to form grating layer (7) on the top of upper electrode layer (6) by etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100300628A CN100424897C (en) | 2005-09-28 | 2005-09-28 | Gallium nitride-base infrared visable wavelength conversion detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100300628A CN100424897C (en) | 2005-09-28 | 2005-09-28 | Gallium nitride-base infrared visable wavelength conversion detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1773732A CN1773732A (en) | 2006-05-17 |
| CN100424897C true CN100424897C (en) | 2008-10-08 |
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ID=36760573
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| CNB2005100300628A Expired - Fee Related CN100424897C (en) | 2005-09-28 | 2005-09-28 | Gallium nitride-base infrared visable wavelength conversion detector |
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Families Citing this family (19)
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|---|---|---|---|---|
| CN100498288C (en) * | 2006-06-30 | 2009-06-10 | 中国科学院上海技术物理研究所 | Detector converted on infrared wavelength, near-infrared wavelength |
| WO2008042859A2 (en) | 2006-09-29 | 2008-04-10 | University Of Florida Research Foundation, Inc. | Method and apparatus for infrared detection and display |
| CN100524842C (en) * | 2007-06-04 | 2009-08-05 | 中国科学院上海技术物理研究所 | AlGaN/PZT ultraviolet/infrared double-waveband detector |
| CN101630717B (en) * | 2008-07-16 | 2011-06-01 | 中国科学院半导体研究所 | Organic-inorganic composite hybrid device structure capable of realizing conversion from low-frequency light to high-frequency light |
| CN102725616B (en) * | 2009-11-24 | 2016-04-06 | 佛罗里达大学研究基金会公司 | For the method and apparatus of sense infrared emissions |
| MX2012013643A (en) * | 2010-05-24 | 2013-05-01 | Univ Florida | Method and apparatus for providing a charge blocking layer on an infrared up-conversion device. |
| US20120049310A1 (en) * | 2010-09-01 | 2012-03-01 | Du Pont Apollo Limited | Thin film photoelectric conversion module and fabrication method of the same |
| CN104540582A (en) * | 2011-04-12 | 2015-04-22 | 康宁公司 | Laser diodes comprising QWI output window and waveguide areas and methods of manufacture |
| EP2718991A4 (en) | 2011-06-06 | 2015-05-13 | Univ Florida | Transparent infrared-to-visible up-conversion device |
| MX2013015214A (en) | 2011-06-30 | 2014-03-21 | Nanoholdings Llc | A method and apparatus for detecting infrared radiation with gain. |
| CN102629637B (en) * | 2011-12-22 | 2014-12-24 | 清华大学 | Wavelength up-conversion device containing quantum cascade structure |
| CN103915538B (en) * | 2014-03-28 | 2016-08-24 | 中国科学院上海技术物理研究所 | A kind of 2 D photon crystal thick film for improving QWIP-LED light extraction efficiency |
| JP2018529214A (en) | 2015-06-11 | 2018-10-04 | ユニバーシティー オブ フロリダ リサーチ ファウンデーション, インコーポレイテッドUniversity Of Florida Research Foundation, Inc. | Monodisperse IR absorbing nanoparticles and related methods and devices |
| CN107768461B (en) * | 2016-08-18 | 2020-06-09 | 清华大学 | Semiconductor infrared detector with embedded heavy doping grating layer |
| CN107665931A (en) * | 2017-08-30 | 2018-02-06 | 中国科学院上海技术物理研究所 | A kind of integrated enhancing quantum trap infrared detector of guide mode resonance and design method |
| CN108011017B (en) * | 2017-11-27 | 2020-04-21 | 清华大学 | Up-conversion device and material and method of making same |
| CN110581123A (en) * | 2018-06-08 | 2019-12-17 | 上海交通大学 | Photon frequency up-conversion device and growing method thereof |
| CN109148496A (en) * | 2018-07-06 | 2019-01-04 | 上海交通大学 | A kind of no pixel image device and preparation method thereof |
| CN109148636A (en) * | 2018-07-06 | 2019-01-04 | 上海交通大学 | A kind of single-photon detector and preparation method thereof |
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-
2005
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Patent Citations (3)
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|---|---|---|---|---|
| US5510627A (en) * | 1994-06-29 | 1996-04-23 | The United States Of America As Represented By The Secretary Of The Navy | Infrared-to-visible converter |
| US6028323A (en) * | 1996-07-19 | 2000-02-22 | National Research Council Of Canada | Quantum well infared image conversion panel and associated methods |
| CN1090335C (en) * | 1998-10-22 | 2002-09-04 | 中国科学院上海技术物理研究所 | Quantum trap infra-red focus planar chip without discrete image element optical read-out |
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|---|---|
| CN1773732A (en) | 2006-05-17 |
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