CN109148636A - A kind of single-photon detector and preparation method thereof - Google Patents
A kind of single-photon detector and preparation method thereof Download PDFInfo
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- CN109148636A CN109148636A CN201810738268.3A CN201810738268A CN109148636A CN 109148636 A CN109148636 A CN 109148636A CN 201810738268 A CN201810738268 A CN 201810738268A CN 109148636 A CN109148636 A CN 109148636A
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Abstract
The present invention provides a kind of single-photon detector and preparation method thereof, and wherein single-photon detector includes photon frequency up-conversion device and silicon signal photon avalanche diode；The photon frequency up-conversion device includes near infrared detector, light emitting diode and graded bedding, and the graded bedding is between near infrared detector and light emitting diode；The emission side of the light emitting diode and the light-receiving surface of the silicon signal photon avalanche diode mutually couple.Upper conversion single-photon detector detectivity of the invention is high, signal-to-noise ratio is good, compact-sized, preparation is convenient, uses simple, without complexity optical beam path design.
Description
Technical field
The present invention relates to field of semiconductor devices more particularly to single-photon detector and preparation method thereof.
Background technique
Single photon detection has important meaning in fields such as quantum information processing, quantum secret communication, laser radar, cosmology
Justice.The near-infrared single photon detector of current main-stream has a superconducting single-photon detector, single-photon avalanche diode and is based on light
The single-photon detector of parameter frequency upooaversion.Although the various aspects of performance index of superconducting nano-wire single-photon detector is close
Or the limit of ideal single-photon detector is reached.But fancy price and extremely low operating temperature (< 3K) seriously hinder
Its large-scale promotion application.Optical parameter frequency upooaversion single-photon detector may be implemented high detection rate, high count rate, and
There is no the influence of afterpulse.But the shortcomings that its dark counting, can not overcome always, and dark counting and detectivity can not get both.This
Outside, relative complex light path design and relatively narrow spectral response also inevitably limit the application model of this detector
It encloses.InGaAs- single-photon avalanche diode is homogeneous as the various aspects of performance index of most common near-infrared single photon detector
To backwardness, the fast development in current quantum communication field has not been adapted to.
(2017,7 (1): Sci Rep 15341.) et al. is proposed integrated upper of infrared detector and light emitting diode Bai
Switching device is applied to single photon detection, and theoretically very high detectivity and splendid signal-to-noise ratio may be implemented in the program.But
Only drawback is that the preparation of the up-conversion device needs epitaxial growth detector respectively due to the influence of material lattice mismatch
Then the two is passed through the Integration ofTechnology of bonding chip together again by part and light emitting diode part.Even now can obtain
Very high quality up-conversion device, but the high cost and cumbersome preparation of epitaxial growth technology and Wafer Bonding Process
Technique seriously hinders the promotion and application of the technology.
Based on the above premise, seek a kind of low in cost, preparation convenience, function admirable, compact-sized single photon detection
Device has great significance to the development of current quantum communication and quantum computer and profound influence.
Summary of the invention
In view of the above-mentioned problems, the present invention proposes a kind of single-photon detector based on direct epitaxial growth up-conversion device.
The single-photon detector includes photon frequency up-conversion device and silicon signal photon avalanche diode, wherein is converted on photon frequency
Device includes near infrared detector, light emitting diode and graded bedding, and the graded bedding is located near infrared detector and light-emitting diodes
Between pipe；The emission side of the light emitting diode and the light-receiving surface of the silicon signal photon avalanche diode mutually couple.
Wherein, the effect of the graded bedding is physical connection near infrared detector and light emitting diode, and is realized good
Be electrically connected.
Further, at least a kind of elemental constituent of the graded bedding gradually changes.
Further, the atomic percent of the content gradually variational element of the graded bedding changes with thickness change.
Further, the graded bedding is InyGa1-yAs；The InyGa1-yIn As In component (i.e. y value) by 0.53 gradually
0 is changed to, gradual change direction is gradually become smaller near infrared photodetector to light emitting diode.
Further, the graded layer thickness is 300nm~1000nm, it is therefore preferable to 400-600nm, more preferably
500nm。
Wherein, in the photon frequency up-conversion device, the near infrared detector is for realizing near infrared light signal
Reception and detection, nearly infrared communication optical signal is converted into photo-generated carrier, and the photo-generated carrier of generation moves to the hair
The active region of optical diode and occur it is compound, generation wavelength be short wavelength-NIR photon or light photon, to realize
Upper conversion.
Further, the near infrared photodetector is III-V race's semiconductor detector of InP-base.
Further, the near infrared photodetector is InP/InGaAs p-i-n detector or InP/InGaAs n-i
Detector.
Further, the near infrared photodetector includes N-shaped cap layers, Intrinsic Gettering layer from the bottom up.
Further, the N-shaped cap layers are with a thickness of 300-800nm, it is therefore preferable to 400-600nm, more preferably
500nm。
Further, the Intrinsic Gettering layer is with a thickness of 1-3 μm, it is therefore preferable to 1.5-2.5 μm, more preferably 2 μm.
Further, N-shaped cap layers are InP in the InP/InGaAs n-i detector, and Intrinsic Gettering layer is InGaAs.
Optionally, the near infrared photodetector includes N-shaped cap layers, Intrinsic Gettering layer and p-type cap layers from the bottom up.
Further, the p-type cap layers are with a thickness of 300-800nm, it is therefore preferable to 400-600nm, more preferably
500nm。
Further, N-shaped cap layers are InP in the InP/InGaAs p-i-n detector, and Intrinsic Gettering layer is InGaAs,
P-type cap layers are InP.
Further, the operating wavelength range of the near infrared photodetector is 800nm~1700nm.
Further, the infrared photoelectric detector with a thickness of 2-5 μm, it is therefore preferable to 3-3.5 μm, more preferably 3 μ
m。
Further, the light emitting diode includes the first barrier layer, active coating, the second barrier layer from the bottom up.
Wherein, radiation recombination occurs for carrier in the active coating；First barrier layer, the second barrier layer main function
For carrier concentration in regulation active coating.
Further, first barrier layer thickness is 100-600nm, it is therefore preferable to 200-400nm, more preferably
300nm。
Further, second barrier layer thickness is 100-600nm, it is therefore preferable to 200-400nm, more preferably
300nm。
Further, the active coating is with a thickness of 100-800nm, it is therefore preferable to 200-600nm, more preferably 400nm.
Further, the light emitting diode is with a thickness of 800-2000nm, it is therefore preferable to 900-1200nm, more preferably
1050nm。
Further, the light emitting diode is GaAs/AlxGa1-xAs double heterojunction light emitting diode.
Further, the GaAs/AlxGa1-xFirst barrier layer of As double heterojunction light emitting diode is AlxGa1-xAs,
Active coating is GaAs, and the second barrier layer is AlxGa1-xAs, first barrier layer and the second barrier layer are about active coating central axis
Symmetrically.
Further, two Al of the light emitting diodexGa1-xAs barrier layer is either the potential barrier that Al component determines
Layer (i.e. x takes one to determine that value, value range are 0.1~0.3), is also possible to Al component with the Al of gradient thicknessxGa1-xAs potential barrier
Layer (i.e. x value with the variation of thickness be gradient to 0.3 from 0.1), it is therefore preferable to Al component with gradient thickness AlxGa1-xAs gesture
Barrier layer.
Further, first barrier layer from bottom to top Al component (i.e. x value) with thickness increase from 0.3 it is linear gradually
Change to 0.1.
Further, second barrier layer from bottom to top Al component (i.e. x value) with thickness increase from 0.1 it is linear gradually
Change to 0.3.
Further, (300K) emission wavelength is 870nm to the light emitting diode at room temperature.
Further, (4K) emission wavelength is 820nm to the light emitting diode at extremely low temperatures.
Further, (< 300K) emission wavelength reduces the light emitting diode with the reduction of temperature at low temperature.
Further, the silicon signal photon avalanche diode is commercial mature silicon signal photon avalanche diode, for connecing
The near-infrared photon issued by detection near-infrared up-conversion device, the infrared photon received is absorbed first is converted into photoproduction
Electronics, light induced electron are amplified under the action of avalanche voltage by snowslide, and then realize and convert single photon detection on near-infrared.
The present invention also provides the methods for preparing above-mentioned any single-photon detector, comprising the following steps:
A) it is epitaxially grown on the substrate near infrared photodetector；
B) the epitaxial growth graded bedding on the near infrared photodetector；
C) the epitaxial growth light emitting diode on the graded bedding；
D) the light end that goes out of the light emitting diode is mutually coupled with the light-receiving surface of silicon signal photon avalanche diode.
Wherein, the method for the epitaxial growth is molecular beam epitaxy (MBE), ion beam epitaxy, liquid phase epitaxial method
(LPE), chemical vapour deposition technique (CVD), Metal Organic Chemical Vapor Deposition method (MOCVD) or vapour phase epitaxy method
(VPE)。
Further, in step d), the light emitting diode of the photon frequency up-conversion device goes out light end and silicon list
The light-receiving surface of photon avalanches diode carries out sanding and polishing, then by wafer bonding techniques or optical cement coupling technique that the two is tight
It forces together.Entirety in conjunction with after is as a near-infrared single photon detector.
Specifically integrated approach includes:
Bonding chip: the luminous end of the light emitting diode of photon frequency up-conversion device and silicon signal photon avalanche diode
Photosurface is processed by shot blasting, through plasma-activated, is then again combined together the two planes by wafer bonding techniques.
Preferably, above-mentioned bonding technology carries out effect meeting more preferably under high vacuum environment；
Optical cement coupling: the luminous end of the light emitting diode of photon frequency up-conversion device and silicon signal photon avalanche diode
After deep clean, the two is tightly pressed together for photosurface polishing treatment, and centre leaves behind the gap of micron-scale, in gap
Between filling optical cement bonded (optical adhesive), the thickness in gap and the LED of up-conversion device shine wave in principle
When long comparable, highest coupling efficiency can be obtained.
Compared with existing single-photon detecting survey technology, the invention has the following advantages that
1, compared to the photon frequency up-conversion device of traditional dependence wafer bonding techniques, on photon frequency of the invention
Switching device is based on III-V semiconductor compound material, and entire device can use molecular beam epitaxy (MBE) technology or gold
The epitaxial growth of semiconductor material growing technologies such as organic compound chemical vapor deposition (MOCVD) technology of category are one directly in InP substrate
Secondary growth obtains, and needs not move through bonding chip.Also, it is a step by epitaxial growth concentration twice before this, substantially reduces device
Make device more compact while preparation cost.
2, compared with the near-infrared InGaAs single-photon detector of existing mainstream, advantage of the invention is that by traditional
InGaAs snowslide single photon diode light absorption area and light multiplication region separation, it is mono- so just to overcome traditional InGaAs
Detection efficient is low caused by photon detector is limited by InP material, the too strong problem of afterpulse effect.
3, compared to traditional InGaAs single-photon detector, the detection efficient of upper conversion single-photon detector of the invention exists
It can achieve the 2 times or more of traditional InGaAs single-photon detector under same operating temperature.
4, compared to conversion single photon detection scheme, upper conversion single photon detection of the present invention in traditional optical parameter
Device detectivity is high, signal-to-noise ratio is good, compact-sized, preparation is convenient, uses simple, without complexity optical beam path design.
5, various pieces of the present invention are III-V semiconductor compound material, can use the standards such as photoetching, etching
Semiconductor technology means are prepared into the device of standard.Dependent on mature growth technology and semiconductor preparing process, this hair
It is bright to be beneficial to produce in enormous quantities, it thus can substantially reduce production cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of single-photon detector of the invention；
Fig. 2 is a kind of structural schematic diagram of photon frequency up-conversion device of the invention, wherein near infrared photodetector
Without p-type cap layers；
Fig. 3 is the structural schematic diagram of another photon frequency up-conversion device of the invention, wherein near-infrared photodetection
Device contains p-type cap layers；
Fig. 4 a is Al content gradually variational schematic diagram in the first barrier layer in light emitting diode of the invention and the second barrier layer；
Fig. 4 b is the constant schematic diagram of Al component in the first barrier layer in light emitting diode of the invention and the second barrier layer；
Fig. 5 is that graded bedding of the invention is InyGa1-yAs linear gradient mode；
Fig. 6 is that graded bedding of the invention is InyGa1-yAs ladder gradual manner；
Fig. 7 is the structural schematic diagram of the upper conversion single-photon detector of the embodiment of the present invention one；
Fig. 8 is the structural schematic diagram of the upper conversion single-photon detector of the embodiment of the present invention two；
Fig. 9 is the structural schematic diagram of the upper conversion single-photon detector of the embodiment of the present invention three；
Figure 10 is the structural schematic diagram of the upper conversion single-photon detector of the embodiment of the present invention four；
Figure 11 a is material property Secondary Ion Mass Spectrometry (SIMS) figure of the embodiment of the present invention four；
Figure 11 b is material property globe mill with dual entry and exit (XRD) figure of the embodiment of the present invention four；
1: up-conversion device；11: near infrared detector；12: light emitting diode；13: graded bedding；111:n type cap layers；112:
Intrinsic Gettering layer；113:p type cap layers；121: the first barrier layers；122: active coating；123: the second barrier layers；2: silicon single photon snow
Collapse diode；3: light coupling layer (bonding chip or optical cement coupling)；4: substrate.
Specific embodiment
Below in conjunction with Figure of description and preferred specific embodiment, the present invention is further illustrated and description, but simultaneously
The protection scope not thereby limited the invention.
The present invention provides a kind of single-photon detector, and wherein Fig. 1 is the structural schematic diagram of single-photon detector of the invention；
Fig. 2 is a kind of structural schematic diagram of photon frequency up-conversion device of the invention, and wherein near infrared photodetector is free of p-type cap
Layer；Fig. 3 is the structural schematic diagram of another photon frequency up-conversion device of the invention, and wherein near infrared photodetector contains
P-type cap layers；Fig. 4 a is Al content gradually variational schematic diagram in the first barrier layer in light emitting diode of the invention and the second barrier layer；Figure
4b is the constant schematic diagram of Al component in the first barrier layer in light emitting diode of the invention and the second barrier layer；Fig. 5 is the present invention
Graded bedding be InyGa1-yAs linear gradient mode；Fig. 6 is that graded bedding of the invention is InyGa1-yAs ladder gradual manner.
Specifically, the present invention proposes a kind of single-photon detector based on direct epitaxial growth up-conversion device.The monochromatic light
Sub- detector includes photon frequency up-conversion device 1 and silicon signal photon avalanche diode 2, wherein photon frequency up-conversion device
Including near infrared detector 11, light emitting diode 12 and graded bedding 13, the graded bedding 13 is located near infrared detector 11 and hair
Between optical diode 12.
Wherein, the effect of the graded bedding 13 is physical connection near infrared detector 11 and light emitting diode 12, and real
It is now good to be electrically connected.
Further, at least a kind of elemental constituent of the graded bedding 13 gradually changes.
Further, the atomic percent of the content gradually variational element of the graded bedding 13 changes with thickness change.
Further, the graded bedding 13 is InyGa1-yAs；The InyGa1-yIn component (i.e. y value) is by 0.53 in As
It is gradient to 0, gradual change direction is gradually become smaller near infrared photodetector 11 to light emitting diode 12.
Further, the graded bedding 13 is with a thickness of 300nm~1000nm, it is therefore preferable to 400-600nm, more preferably
500nm。
Wherein, in the photon frequency up-conversion device, the near infrared detector is for realizing near infrared light signal
Reception and detection, nearly infrared communication optical signal is converted into photo-generated carrier, and the photo-generated carrier of generation moves to the hair
The active region of optical diode and occur it is compound, generation wavelength be short wavelength-NIR photon or light photon, to realize
Upper conversion.
Further, the near infrared photodetector 11 is III-V race's semiconductor detector of InP-base.
Further, the near infrared photodetector 11 is InP/InGaAs p-i-n detector or InP/InGaAs
N-i detector.
Further, the near infrared photodetector 11 includes N-shaped cap layers 111, Intrinsic Gettering layer 112 from the bottom up.
Further, the N-shaped cap layers 111 are with a thickness of 300-800nm, it is therefore preferable to 400-600nm, more preferably
500nm。
Further, the Intrinsic Gettering layer 112 is with a thickness of 1-3 μm, it is therefore preferable to 1.5-2.5 μm, more preferably 2 μ
m。
Further, N-shaped cap layers 111 are InP in the InP/InGaAs n-i detector, and Intrinsic Gettering layer 112 is
InGaAs。
Optionally, the near infrared photodetector 11 includes N-shaped cap layers 111, Intrinsic Gettering layer 112 and p from the bottom up
Type cap layers 113.
Further, the p-type cap layers 113 are with a thickness of 300-800nm, it is therefore preferable to 400-600nm, more preferably
500nm。
Further, N-shaped cap layers 111 are InP in the InP/InGaAs p-i-n detector, and Intrinsic Gettering layer 112 is
InGaAs, p-type cap layers 113 are InP.
Further, the operating wavelength range of the near infrared photodetector 11 is 800nm~1700nm.
Further, the infrared photoelectric detector 11 with a thickness of 2-5 μm, it is therefore preferable to 3-3.5 μm, more preferably
3μm。
Further, the light emitting diode 12 includes the first barrier layer 121, active coating 122, the second potential barrier from the bottom up
Layer 123.
Wherein, radiation recombination occurs for carrier in the active coating 122；First barrier layer 121, the second barrier layer
123 main functions are carrier concentration in regulation active coating.
Further, first barrier layer 121 is with a thickness of 100-600nm, it is therefore preferable to 200-400nm, more preferably
For 300nm.
Further, second barrier layer 123 is with a thickness of 100-600nm, it is therefore preferable to 200-400nm, more preferably
For 300nm.
Further, the active coating 122 is with a thickness of 100-800nm, it is therefore preferable to 200-600nm, more preferably
400nm。
Further, the light emitting diode 12 is with a thickness of 800-2000nm, it is therefore preferable to 900-1200nm, more preferably
For 1050nm.
Further, the light emitting diode 12 is GaAs/AlxGa1-xAs double heterojunction light emitting diode.
Further, the GaAs/AlxGa1-xFirst barrier layer 121 of As double heterojunction light emitting diode is AlxGa1- xAs, active coating 122 are GaAs, and the second barrier layer 123 is AlxGa1-xAs, first barrier layer 121 and the second barrier layer 123
It is substantially symmetrical about its central axis about active coating 122.
Further, two Al of the light emitting diode 12xGa1-xAs barrier layer is either the gesture that Al component determines
Barrier layer (i.e. x takes one to determine that value, value range are 0.1~0.3), is also possible to Al component with the Al of gradient thicknessxGa1-xAs gesture
Barrier layer (i.e. x value with the variation of thickness be gradient to 0.3 from 0.1), it is therefore preferable to Al component with gradient thickness AlxGa1-xAs
Barrier layer.
Further, first barrier layer 121 from bottom to top Al component (i.e. x value) as the increase of thickness is from 0.3 line
Property is gradient to 0.1.
Further, second barrier layer 123 from bottom to top Al component (i.e. x value) as the increase of thickness is from 0.1 line
Property is gradient to 0.3.
Further, (300K) emission wavelength is 870nm to the light emitting diode 12 at room temperature.
Further, (4K) emission wavelength is 820nm to the light emitting diode 12 at extremely low temperatures.
Further, (< 300K) emission wavelength reduces the light emitting diode 12 with the reduction of temperature at low temperature.
Further, the silicon signal photon avalanche diode 2 is commercial mature silicon signal photon avalanche diode, for connecing
The near-infrared photon issued by detection near-infrared up-conversion device, the infrared photon received is absorbed first is converted into photoproduction
Electronics, light induced electron are amplified under the action of avalanche voltage by snowslide, and then realize and convert single photon detection on near-infrared.
The present invention also provides the methods for preparing above-mentioned any single-photon detector, comprising the following steps:
A) it is epitaxially grown on the substrate near infrared photodetector；
B) the epitaxial growth graded bedding on the near infrared photodetector；
C) the epitaxial growth light emitting diode on the graded bedding；
D) the light end that goes out of the light emitting diode is mutually coupled with the light-receiving surface of silicon signal photon avalanche diode.
Wherein, the method for the epitaxial growth is molecular beam epitaxy (MBE), ion beam epitaxy, liquid phase epitaxial method
(LPE), chemical vapour deposition technique (CVD), Metal Organic Chemical Vapor Deposition method (MOCVD) or vapour phase epitaxy method
(VPE)。
Further, in step d), the light emitting diode of the photon frequency up-conversion device goes out light end and silicon list
The light-receiving surface of photon avalanches diode carries out sanding and polishing, then by wafer bonding techniques or optical cement coupling technique that the two is tight
It forces together.Entirety in conjunction with after is as a near-infrared single photon detector.
Specifically integrated approach includes:
Bonding chip: the luminous end of the light emitting diode of photon frequency up-conversion device and silicon signal photon avalanche diode
Photosurface is processed by shot blasting, through plasma-activated, is then again combined together the two planes by wafer bonding techniques.
Preferably, above-mentioned bonding technology carries out effect meeting more preferably under high vacuum environment；
Optical cement coupling: the luminous end of the light emitting diode of photon frequency up-conversion device and silicon signal photon avalanche diode
After deep clean, the two is tightly pressed together for photosurface polishing treatment, and centre leaves behind the gap of micron-scale, in gap
Between filling optical cement bonded (optical adhesive), the thickness in gap and the LED of up-conversion device shine wave in principle
When long comparable, highest coupling efficiency can be obtained.
Below by the specific embodiment single-photon detector that the present invention is further explained.
Embodiment one:
A kind of novel single-photon detector of the photon frequency up-conversion device based on direct epitaxial growth, as shown in fig. 7,
Illustrate for the novel single-photon detector device architecture of the photon frequency up-conversion device of the invention based on direct epitaxial growth
Figure, photon frequency up-conversion device 1 and a commercial silicon signal photon avalanche diode 2 including a direct epitaxial growth.Tool
Body, photon frequency up-conversion device includes 12 three parts of near infrared detector 11, graded bedding 13 and light emitting diode；It is wherein close
Infrared detector 11 absorbs incident near infrared light signal, is converted into photo-generated carrier, and the photo-generated carrier of generation will be
The active region that light emitting diode 12 is moved under electric field action occurs radiation recombination and issues short wavelength-NIR photon or visible light
Son, to be converted on realizing.The near-infrared photon Frequency up-converter part is using MBE method with a thickness of 500 μm, lining when growth
Bottom 4 is that directly epitaxial growth obtains on the substrate of InP.Outer delay, the first epitaxial growth near infrared detector 11 on InP, then
The epitaxial growth graded bedding 13 on the p-type InP of near infrared detector 11, finally the epitaxial growth light emitting diode on graded bedding 13
12。
The near infrared detector 11 is the InP/In containing p-type cap layers 1130.53Ga0.47As p-i-n infrared detector:
Wherein N-shaped cap layers 111 are the N-shaped InP of 800nm thickness；Intrinsic Gettering layer 112 is the InGaAs of 3 μ m-thicks, and p-type cap layers 113 are
The p-type InP of 300nm thickness.
The light emitting diode 12 is GaAs/AlGaAs double heterojunction light emitting diode, wherein the first barrier layer 121 is
The p-type Al of 200nm thicknessxGa1-xAs, active coating 122 are the p-type GaAs of 800nm thickness, and the second barrier layer 123 is 200nm thick
The N-shaped Al of degreexGa1-xAs；Al component x=0.2 in first barrier layer 121 and the second barrier layer 123.
Connected between the near infrared detector 11 and light emitting diode 12 by graded bedding 13, graded bedding 13 be with a thickness of
The In of 300nmyGa1-yAs, wherein In component is by 0.53 linear gradient to 0, i.e., gradual change direction is from p-type layer of InP to the first potential barrier
Layer, In component is from 0.53 linear gradient to 0.Graded bedding 13 had not only been able to achieve good electrical connection, but also overcame the crystalline substance of InP and GaAs
Lattice mismatch obtains the entire direct step epitaxial growth of up-conversion device.
The luminous end of 1 light emitting diode of up-conversion device and the light-receiving surface of silicon signal photon avalanche diode 2 are beaten
Grinding and polishing light, then be tightly pressed together the two by wafer bonding techniques or optical cement coupling technique.Entirety in conjunction with after is as one
A near-infrared single photon detector.
Embodiment two:
A kind of novel single-photon detector of the photon frequency up-conversion device based on direct epitaxial growth, as shown in figure 8,
For the novel single-photon detector of the photon frequency up-conversion device of the invention based on direct epitaxial growth, when growth, is described close
Infrared photon frequency upooaversion device uses mocvd method raw for directly extension on the substrate of InP with a thickness of 700 μm, substrate layer 4
Length obtains.Outer delay, elder generation's epitaxial growth near infrared detector 11 on InP, then on the p-type InP of near infrared detector 11 outside
Prolong growth graded bedding, finally the epitaxial growth light emitting diode 12 on graded bedding 13.
The near infrared detector 11 is the InP/In containing p-type cap layers 130.53Ga0.47As p-i-n infrared detector: its
Middle N-shaped cap layers 111 are the N-shaped InP of 400nm thickness；Intrinsic Gettering layer 112 is the InGaAs of 2 μ m-thicks, and p-type cap layers 113 are
The p-type InP of 400nm thickness.
The light emitting diode 12 is GaAs/AlGaAs double heterojunction light emitting diode, wherein the first barrier layer 121 is
The p-type Al of 600nm thicknessxGa1-xAs, active coating 122 are the p-type GaAs of 300nm thickness, and the second barrier layer 123 is 600nm thick
The N-shaped Al of degreexGa1-xAs；First barrier layer 121 is as the increase of thickness is from 0.3 linear gradient to 0.1, i.e., from the first barrier layer
121 to x on 122 direction of active coating from 0.3 linear gradient to 0.1；Second barrier layer 123 is linear from 0.1 with the increase of thickness
It is gradient to 0.3, i.e., from x on 123 direction of the 122 to the first barrier layer of active coating from 0.1 linear gradient to 0.3；
It is connected between the near infrared detector 11 and light emitting diode 12 by graded bedding 13, graded bedding 13 is 1000nm
The In of thicknessyGa1-yAs, wherein In component is gradient to 0 by 0.53 ladder, i.e. gradual change direction from p-type layer of InP to the first barrier layer,
In component is gradient to 0 from 0.53 ladder.Graded bedding 13 had not only been able to achieve good electrical connection, but also overcame the lattice of InP and GaAs
Mismatch obtains the entire direct step epitaxial growth of up-conversion device.
The luminous end of 1 light emitting diode of up-conversion device and the light-receiving surface of silicon signal photon avalanche diode 2 are beaten
Grinding and polishing light, then be tightly pressed together the two by wafer bonding techniques or optical cement coupling technique.Entirety in conjunction with after is as one
A near-infrared single photon detector.
Embodiment three:
A kind of novel single-photon detector of the photon frequency up-conversion device based on direct epitaxial growth, as shown in figure 9,
For the novel single-photon detector of the photon frequency up-conversion device of the invention based on direct epitaxial growth, including one directly
The photon frequency up-conversion device 1 of epitaxial growth and a commercial silicon signal photon avalanche diode 2.Specifically, on photon frequency
Switching device includes 12 three parts of near infrared detector 11, graded bedding 13 and light emitting diode.Near-infrared photon when growth
Frequency upooaversion device uses CVD method to obtain with a thickness of 600 μm, substrate layer 4 for directly epitaxial growth on the substrate of InP.Outside
Delay, first the epitaxial growth near infrared detector 11 on InP, then the extension on the Intrinsic Gettering layer 112 of near infrared detector 11
Graded bedding 13 is grown, finally the epitaxial growth light emitting diode 12 on graded bedding 13.
The near infrared detector 11 is the InP/InGaAs n-i infrared detector without p-type cap layers: wherein N-shaped cap layers
111 be the N-shaped InP of 600nm thickness；Intrinsic Gettering layer 112 is the InGaAs of 1 μ m-thick.
The light emitting diode 12 is GaAs/AlGaAs double heterojunction light emitting diode, wherein the first barrier layer 121 is
The p-type Al of 400nm thicknessxGa1-xAs, active coating 122 are the p-type GaAs of 500nm thickness, and the second barrier layer 123 is 400nm thick
The N-shaped Al of degreexGa1-xAs；Al component x=0.25 in first barrier layer 121 and the second barrier layer 123.
It is connected between the near infrared detector 11 and light emitting diode 12 by graded bedding 13, graded bedding 13 is 800nm
The In of thicknessyGa1-yAs, wherein In component is by 0.53 linear gradient to 0, i.e., gradual change direction from InGaAs layers of Intrinsic Gettering layer to
First barrier layer, In component is from 0.53 linear gradient to 0.Graded bedding 13 had not only been able to achieve good electrical connection, but also overcame
The lattice mismatch of InGaAs and GaAs obtains the entire direct step epitaxial growth of up-conversion device.
The luminous end of 1 light emitting diode of up-conversion device and the light-receiving surface of silicon signal photon avalanche diode 2 are beaten
Grinding and polishing light, then be tightly pressed together the two by wafer bonding techniques or optical cement coupling technique.Entirety in conjunction with after is as one
A near-infrared single photon detector.
Example IV:
A kind of novel single-photon detector of the photon frequency up-conversion device based on direct epitaxial growth, such as Figure 10 institute
Show, is the novel single-photon detector of the photon frequency up-conversion device of the invention based on direct epitaxial growth, growth when institute
State near-infrared photon Frequency up-converter part use MBE method with a thickness of 640 μm, substrate layer 4 for direct extension on the substrate of InP
Growth obtains.Outer delay, first the epitaxial growth near infrared detector 11 on InP, then the Intrinsic Gettering near infrared detector 11
Epitaxial growth graded bedding 13 on layer 112, finally the epitaxial growth light emitting diode 12 on graded bedding 13.
The near infrared detector 11 is that the InP/InGaAs n-i without p-type cap layers visits infrared detector: wherein N-shaped cap
Layer 111 is the N-shaped InP of 500nm thickness；Intrinsic Gettering layer 112 is the InGaAs of 2 μ m-thicks.
The light emitting diode 12 is GaAs/AlGaAs double heterojunction light emitting diode, wherein the first barrier layer 121 is
The p-type Al of 400nm thicknessxGa1-xAs, active coating 122 are p-type GaAs, and the second barrier layer 123 is N-shaped AlxGa1-xAs；First gesture
Barrier layer 121 as the increase of thickness is from 0.3 linear gradient to 0.1, i.e., on from the first barrier layer 121 to 122 direction of active coating x from
0.3 linear gradient is to 0.1；Second barrier layer 123 is as the increase of thickness is from 0.1 linear gradient to 0.3, i.e., from active coating 122
X is from 0.1 linear gradient to 0.3 on to 123 direction of the first barrier layer；
It is connected between the near infrared detector 11 and light emitting diode 12 by graded bedding 13, graded bedding 13 is
InyGa1-yAs, wherein In component is gradient to 0 by 0.53 ladder, i.e., gradual change direction is from p-type layer of InP to the first barrier layer, In component
0 is gradient to from 0.53 ladder.Graded bedding 13 had not only been able to achieve good electrical connection, but also overcame the lattice mistake of InGaAs and GaAs
Match, the entire direct step epitaxial growth of up-conversion device is obtained.
The material property of above-mentioned growth carries out performance table by Secondary Ion Mass Spectrometry (SIMS) and globe mill with dual entry and exit (XRD)
Sign, characterization result is respectively as shown in Figure 11 a, 11b.Can be seen that from the SIMS of Figure 11 a the component of measured In, Ga, Al by
According to design parameter stringent growth, error is no more than 1%；It can be seen that two peaks respectively represent InP's and GaAs from the XRD of Figure 11 b
Diffraction maximum, calculating are learnt, by way of content gradually variational, stress caused by about 98% lattice mismatch is released, material matter
Amount meets up-conversion device requirement.
The luminous end of 1 light emitting diode of up-conversion device and the light-receiving surface of silicon signal photon avalanche diode 2 are beaten
Grinding and polishing light, then be tightly pressed together the two by wafer bonding techniques or optical cement coupling technique.Entirety in conjunction with after is as one
A near-infrared single photon detector.
Epitaxial wafer after integrated utilizes the semiconductor technology (cleavage, photoetching, etching, electrode deposition, encapsulation etc.) of standard
It is prepared, then extraction electrode, just obtains compact, efficient, the lower upper conversion single-photon detectors of price.
Compared with existing single-photon detecting survey technology, the invention has the following advantages that
1, compared to the photon frequency up-conversion device of traditional dependence wafer bonding techniques, on photon frequency of the invention
Switching device is based on III-V semiconductor compound material, and entire device can use molecular beam epitaxy (MBE) technology or gold
The epitaxial growth of semiconductor material growing technologies such as organic compound chemical vapor deposition (MOCVD) technology of category are one directly in InP substrate
Secondary growth obtains, and needs not move through bonding chip.Also, it is a step by epitaxial growth concentration twice before this, substantially reduces device
Make device more compact while preparation cost.
2, compared with the near-infrared InGaAs single-photon detector of existing mainstream, advantage of the invention is that by traditional
InGaAs snowslide single photon diode light absorption area and light multiplication region separation, it is mono- so just to overcome traditional InGaAs
Detection efficient is low caused by photon detector is limited by InP material, the too strong problem of afterpulse effect.
3, compared to traditional InGaAs single-photon detector, the detection efficient of upper conversion single-photon detector of the invention exists
It can achieve the 2 times or more of traditional InGaAs single-photon detector under same operating temperature.
4, compared to conversion single photon detection scheme, upper conversion single photon detection of the present invention in traditional optical parameter
Device detectivity is high, signal-to-noise ratio is good, compact-sized, preparation is convenient, uses simple, without complexity optical beam path design.
5, various pieces of the present invention are III-V semiconductor compound material, can use the standards such as photoetching, etching
Semiconductor technology means are prepared into the device of standard.Dependent on mature growth technology and semiconductor preparing process, this hair
It is bright to be beneficial to produce in enormous quantities, it thus can substantially reduce production cost.
All references mentioned in the present invention is incorporated herein by reference, independent just as each document
It is incorporated as with reference to such.In addition, it should also be understood that, after reading the above teachings of the present invention, those skilled in the art can
To make various changes or modifications to the present invention, such equivalent forms equally fall within model defined by the application the appended claims
It encloses.
Claims (10)
1. a kind of single-photon detector, which is characterized in that including photon frequency up-conversion device and silicon signal photon avalanche diode；
The photon frequency up-conversion device includes near infrared detector, light emitting diode and graded bedding, and the graded bedding is located at
Between near infrared detector and light emitting diode；
The emission side of the light emitting diode and the light-receiving surface of the silicon signal photon avalanche diode mutually couple.
2. a kind of single-photon detector as described in claim 1, which is characterized in that at least a kind of element group of the graded bedding
Divide and gradually changes.
3. a kind of single-photon detector as claimed in claim 2, which is characterized in that the content gradually variational element of the graded bedding
Atomic percent changes with thickness change.
4. a kind of single-photon detector as claimed in claim 3, which is characterized in that the graded bedding is InyGa1-yAs；It is described
InyGa1-yIn component is gradient to 0 by 0.53 in As, and gradual change direction gradually becomes near infrared photodetector to light emitting diode
It is small.
5. a kind of single-photon detector as described in claim 1, which is characterized in that the near infrared photodetector is InP
III-V race's semiconductor detector of base.
6. a kind of single-photon detector as claimed in claim 5, which is characterized in that the near-infrared dipped beam electric explorer is
InP/InGaAs p-i-n detector or InP/InGaAs n-i detector.
7. a kind of single-photon detector as described in claim 1, which is characterized in that the light emitting diode is GaAs/
AlxGa1-xAs double heterojunction light emitting diode.
8. a kind of prepare the method such as single-photon detector of any of claims 1-7, it is characterised in that including with
Lower step:
A) it is epitaxially grown on the substrate near infrared photodetector；
B) the epitaxial growth graded bedding on the near infrared photodetector；
C) the epitaxial growth light emitting diode on the graded bedding；
D) the light end that goes out of the light emitting diode is mutually coupled with the light-receiving surface of silicon signal photon avalanche diode.
9. a kind of method described in right 8, which is characterized in that the method for the epitaxial growth be molecular beam epitaxy (MBE),
Ion beam epitaxy, liquid phase epitaxial method (LPE), chemical vapour deposition technique (CVD), Metal Organic Chemical Vapor Deposition method
(MOCVD) or vapour phase epitaxy method (VPE).
10. a kind of method according to claim 8, which is characterized in that the method for the step d) be bonding chip method or
Optical cement coupled method.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364588A (en) * | 2019-06-10 | 2019-10-22 | 深圳市和创元科技有限公司 | A kind of novel infrared remote control receiver mould group and its manufacturing method |
| CN112295866A (en) * | 2019-07-26 | 2021-02-02 | 中国科学院福建物质结构研究所 | Preparation method of all-metal organic framework van der Waals heterojunction layer film, film prepared by preparation method and application of film |
| US20210151612A1 (en) * | 2019-11-18 | 2021-05-20 | Epistar Corporation | Photodetector |
| CN113284973A (en) * | 2021-05-14 | 2021-08-20 | 长春理工大学 | Avalanche photodiode structure with high responsivity |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1773732A (en) * | 2005-09-28 | 2006-05-17 | 中国科学院上海技术物理研究所 | Gallium nitride-base infrared visable wavelength conversion detector |
| CN102820365A (en) * | 2012-08-22 | 2012-12-12 | 上海交通大学 | Semiconductor infrared up-conversion single photon detection equipment and method |
| CN102832289A (en) * | 2012-08-13 | 2012-12-19 | 上海交通大学 | Terahertz imaging device based on photon frequency up-conversion, and conversion method |
-
2018
- 2018-07-06 CN CN201810738268.3A patent/CN109148636A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1773732A (en) * | 2005-09-28 | 2006-05-17 | 中国科学院上海技术物理研究所 | Gallium nitride-base infrared visable wavelength conversion detector |
| CN102832289A (en) * | 2012-08-13 | 2012-12-19 | 上海交通大学 | Terahertz imaging device based on photon frequency up-conversion, and conversion method |
| CN102820365A (en) * | 2012-08-22 | 2012-12-12 | 上海交通大学 | Semiconductor infrared up-conversion single photon detection equipment and method |
Non-Patent Citations (1)
| Title |
|---|
| 上海市经济委员会 上海科学技术情报研究所: "《世界制造业重点行业发展动态》", 31 December 2016 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364588A (en) * | 2019-06-10 | 2019-10-22 | 深圳市和创元科技有限公司 | A kind of novel infrared remote control receiver mould group and its manufacturing method |
| CN112295866A (en) * | 2019-07-26 | 2021-02-02 | 中国科学院福建物质结构研究所 | Preparation method of all-metal organic framework van der Waals heterojunction layer film, film prepared by preparation method and application of film |
| US20210151612A1 (en) * | 2019-11-18 | 2021-05-20 | Epistar Corporation | Photodetector |
| US11935969B2 (en) * | 2019-11-18 | 2024-03-19 | Epistar Corporation | Photodetector with modified region in barrier and absorption structures |
| CN113284973A (en) * | 2021-05-14 | 2021-08-20 | 长春理工大学 | Avalanche photodiode structure with high responsivity |
| CN113284973B (en) * | 2021-05-14 | 2022-07-05 | 长春理工大学 | Avalanche photodiode structure with high responsivity |
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