CN107768461B - Semiconductor infrared detector with embedded heavy doping grating layer - Google Patents

Semiconductor infrared detector with embedded heavy doping grating layer Download PDF

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CN107768461B
CN107768461B CN201610686153.5A CN201610686153A CN107768461B CN 107768461 B CN107768461 B CN 107768461B CN 201610686153 A CN201610686153 A CN 201610686153A CN 107768461 B CN107768461 B CN 107768461B
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heavily doped
grating
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郝智彪
刘雅琦
汪莱
罗毅
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Tsinghua University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier

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Abstract

The embodiment of the invention discloses a semiconductor infrared detector embedded with a heavily doped grating. The semiconductor infrared detector includes: a substrate; a lower electrode layer, a multiple quantum well active layer and an upper electrode layer which are sequentially grown on the substrate; a heavily doped grating layer is also grown on the substrate, and the heavily doped grating layer is grown between the upper electrode layer and the multiple quantum well active layer or between the multiple quantum well active layer and the lower electrode layer; and a transition layer is also grown on the substrate, and the transition layer is grown between the heavily doped grating layer and the multiple quantum well active layer. According to the embodiment of the invention, the heavily doped grating layer is arranged between the multiple quantum well active layer and the lower electrode layer or between the multiple quantum well active layer and the upper electrode layer, so that incident light and electrons in the heavily doped grating layer interact with each other and plasmon is formed on the interface of the grating layer, a locally enhanced light field is formed in the multiple quantum well active layer, and the absorption efficiency of the active region of the detector is further improved.

Description

Semiconductor infrared detector with embedded heavy doping grating layer
Technical Field
The embodiment of the invention relates to the field of semiconductor materials and devices, in particular to a semiconductor infrared detector with an embedded heavily doped grating layer.
Background
The infrared detector is an important device working in medium-long wave and very-long wave frequency bands. The infrared detectors widely used at present comprise a mercury cadmium telluride detector and a gallium arsenide quantum well detector, and the quantum well infrared detector only absorbs incident light with electric field components along the growth direction of a quantum well due to a transition mechanism of transition between sub-bands of the quantum well infrared detector, so that the absorption efficiency and the detection rate are low.
Therefore, in practical use of the quantum well infrared detector, a surface grating structure or a 45-degree incidence plane is often used to solve the problem of polarization selectivity of incident light. The problem is solved by the surface plasmon effect of the surface metal grating, and the absorption efficiency of the active region to incident light is enhanced by the light field local characteristic of the surface plasmon. In the bulk material detector, the thickness of the active region can be compressed by utilizing the limitation of the surface plasmon to the optical field.
The surface plasmon is a local enhancement of an optical field with a specific frequency formed near the interface between a metal and a medium due to coupled oscillation generated by interaction of incident light and free electrons in the metal when light passes through a metal thin film with a two-dimensional aperture array.
The amplitude of the surface plasmon is attenuated in the direction vertical to the metal-semiconductor interface, but in the manufacturing process of the device, as metal can only be deposited on the surface of the device, in order to enhance the optical field in the active region, a certain thickness of the upper electrode layer and the active layer needs to be sacrificed to enable the active region to be positioned in the penetration depth of the surface plasmon, and the responsivity of the detector is restricted.
Disclosure of Invention
It is an object of embodiments of the present invention to solve the problem of the prior art that the use of metal gratings requires a sacrifice of part of the thickness in exchange for responsivity.
The embodiment of the invention provides a semiconductor infrared detector embedded with a heavily doped grating, which comprises: a substrate; a lower electrode layer, a multiple quantum well active layer and an upper electrode layer which are sequentially grown on the substrate; a heavily doped grating layer is also grown on the substrate, and the heavily doped grating layer is grown between the upper electrode layer and the multiple quantum well active layer or between the multiple quantum well active layer and the lower electrode layer;
and a transition layer is also grown on the substrate, and the transition layer is grown between the heavily doped grating layer and the multiple quantum well active layer.
Preferably, the heavily doped grating layer has a one-dimensional or two-dimensional periodic sub-wavelength structure.
Preferably, the material of the heavily doped grating layer is any one of gallium arsenide, aluminum arsenide, indium phosphide, aluminum phosphide, gallium nitride, indium nitride and aluminum nitride, or a ternary/quaternary compound formed by the above materials.
Preferably, the doping type of the heavily doped grating layer is n-type or p-type, and the doping concentration is 1 × 1018cm-3～1×1021cm-3。
Preferably, the grating pattern of the heavily doped grating layer comprises: strip, round, square, triangular.
Preferably, when the grating pattern of the heavily doped grating layer is circular, the grating duty cycle of the heavily doped grating layer is 0.1-0.7;
when the grating pattern is other than a circle, the grating duty ratio is 0.1-0.9.
Preferably, the grating period of the heavily doped grating layer is 0.5 μm-20 μm.
Preferably, the thickness of the heavily doped grating layer is 2 nm-500 nm.
Preferably, the interval between the heavily doped grating layer and the multiple quantum well active layer is 2 nm-500 nm.
According to the technical scheme, the heavily doped grating layer is arranged between the multiple quantum well active layer and the lower electrode layer or between the multiple quantum well active layer and the upper electrode layer, so that incident light and electrons in the heavily doped grating layer interact with each other and plasmon is formed on an interface of the grating layer, a locally enhanced light field is formed in the multiple quantum well active layer, and the absorption efficiency of an active region of the detector is improved.
Drawings
The features and advantages of the present invention will be more clearly understood by reference to the accompanying drawings, which are illustrative and not to be construed as limiting the invention in any way, and in which:
fig. 1 is a schematic structural diagram of a semiconductor infrared detector embedded with a heavily doped grating according to an embodiment of the present invention;
fig. 2 shows a schematic structural diagram of a periodic hole array of a grating layer in a semiconductor infrared detector embedded with a heavily doped grating according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Fig. 1 is a schematic structural diagram of a semiconductor infrared detector embedded with a heavily doped grating layer according to an embodiment of the present invention, and referring to fig. 1, the semiconductor infrared detector includes: a substrate 100; the semiconductor device comprises a lower electrode layer 101, a heavily doped grating layer 102, a transition layer 103, a multiple quantum well active layer 104 and an upper electrode layer 105 which are sequentially grown on the substrate 100.
It will be understood that the growth position of the heavily doped grating layer 102 can be set, for example: in fig. 1, a heavily doped grating layer 102 is disposed between a multiple quantum well active layer 104 and a lower electrode layer 101; heavily doped grating layer 102 may also be disposed between multiple quantum well active layer 104 and upper electrode layer 105;
correspondingly, the position of the transition layer 103 also needs to be correspondingly set, so that the transition layer 103 is located between the heavily doped grating layer 102 and the multiple quantum well active layer 104, and the effect of separating the heavily doped grating layer 102 and the multiple quantum well active layer 104 is achieved.
If the heavily doped grating layer 102 is disposed between the multiple quantum well active layer 104 and the upper electrode layer 105, the lower electrode layer 101, the multiple quantum well active layer 104, the transition layer 103, the heavily doped grating layer 102, and the upper electrode layer 105 are sequentially grown on the substrate 100.
Wherein, the upper electrode layer 105 is one of n-type doping and p-type doping, and the lower electrode layer 101 is the other of n-type doping and p-type doping; examples of n-type and p-type electrode layers are: and a GaAs electrode layer.
Further, a lower feeding electrode 107 is provided on the lower electrode layer 101, and an upper feeding electrode 106 is provided on the upper electrode layer 105. In the embodiment, the heavily doped grating layer 102 is arranged between the multiple quantum well active layer 104 and the lower electrode layer 101, or between the multiple quantum well active layer 104 and the upper electrode layer 105, so that incident light interacts with electrons in the heavily doped grating layer 102 and plasmons are formed on a grating layer interface, and thus a locally enhanced optical field is formed in the multiple quantum well active layer 104, and the absorption efficiency of the active region of the detector is improved.
In this embodiment, the material of the heavily doped grating layer 102 may be any one of gallium arsenide, aluminum arsenide, indium phosphide, aluminum phosphide, gallium nitride, indium nitride, and aluminum nitride, or a ternary/quaternary compound formed, for example, indium gallium arsenide;
the heavily doped grating layer 102 has a one-dimensional or two-dimensional periodic sub-wavelength structure, the doping type is n-type or p-type, and the doping concentration is 1 × 1018cm-3～1×1021cm-3For example: 1020cm-3。
The raster pattern may be bar, circular, square, triangular, etc. When the grating pattern of the heavily doped grating layer is circular, the grating duty cycle of the heavily doped grating layer is 0.1-0.7; when the grating pattern is other than a circle, the grating duty ratio is 0.1-0.9. For example, in the case of a square raster pattern, the duty cycle is 0.5. The grating period is 0.5-20 μm.
The thickness of the heavily doped grating layer 102 is 2 nm-500 nm.
The interval between the heavily doped grating layer 102 and the multiple quantum well active layer 104 is 2 nm-500 nm.
Fig. 2 shows a schematic structural diagram of a grating layer periodic hole array of a semiconductor infrared detector embedded with a heavily doped grating according to an embodiment of the present invention, and the following describes the principle of the embodiment of the present invention in detail with reference to fig. 1 and fig. 2:
in fig. 1, the upper power feeding electrode 106 and the lower power feeding electrode 107 are connected to a power supply 108; the heavily doped grating layer 102 includes an aperture 21.
During the light detection process, the wavelength of the incident infrared light is about 4.3 μm. Incident light waves penetrate through the substrate and the lower electrode layer, surface plasma waves 109 are formed on the upper surface and the lower surface of the heavily doped grating layer 102, the electric field intensity of the formed surface plasma waves 109 in the material epitaxial direction is exponentially attenuated, and the surface plasma waves have a local enhancement effect on an electric field in the range near the heavily doped grating layer 102, so that a local field with high electric field intensity exists near an active region, and a large photocurrent is obtained.
The relative dielectric constant of n + -InGaAs can be expressed as
Figure BDA0001083424920000051
Wherein,
Figure BDA0001083424920000052
is the plasma frequency, ε, of the material0Dielectric constant of vacuum,. epsilons13.9 and ε∞11.6 is the relative permittivity of InGaAs at static and high frequencies, respectively, m*＝0.041m0M is an electron effective mass0And e are electron unit mass and unit charge, respectively. Gamma-shapedp＝3×1011Hz is the free electron relaxation coefficient, gammaTO～1011Hz is the transverse optical phonon relaxation factor, omegaTO＝6.7×1012Hz is the transverse optical phonon relaxation factor.
The estimation is performed according to equation (1), and the first term on the right side is much smaller than the second term and can be ignored. The doping concentration is 1020cm-3N + -InGaAs plasma frequency omegap≈8.18×1014Hz, real part of relative permittivity ε at an incident light λ of 4.3 μm1About-28.85. The transition layer has a relative dielectric constant of about epsilon210.5. The condition that dielectric constants of two sides of the interface are opposite in sign when the surface plasma is excited is met.
In order to realize the excitation of surface plasmons, the two-dimensional periodic square hole structure with the period a as shown in fig. 2 must satisfy the wave vector matching condition:
Figure BDA0001083424920000053
wherein,
Figure BDA0001083424920000054
and
Figure BDA0001083424920000055
respectively, the wave vector of the surface plasma wave and the wave vector of the incident light in the transition layer, and theta is the incident angle of the incident light wave.
Figure BDA0001083424920000061
And
Figure BDA0001083424920000062
is unit Bragg wave vector of heavily doped semiconductor grating in x direction and y direction, i and j are integers, PxAnd PyThe periods of the gratings in the x-direction and y-direction, respectively.
From the above formula, it can be deduced that the period of the grating needs to satisfy the requirement for enhancing the light corresponding to the incident wavelength λ
Figure BDA0001083424920000063
Penetration depth of
Figure BDA0001083424920000064
The period a was estimated to be 5.22 μm and the penetration depth δ was estimated to be 0.17 μm. When the active region is in the penetration depth range of the surface plasmon, the optical field near the active region can be enhanced, so that after a proper period is selected, the thicknesses of the transition layer and the grating layer are properly adjusted, and the device can obtain better absorption efficiency.
Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations fall within the scope defined by the appended claims.

Claims (8)

1. A semiconductor infrared detector embedded with a heavily doped grating is characterized by comprising: a substrate; a lower electrode layer, a multiple quantum well active layer and an upper electrode layer which are sequentially grown on the substrate;
a heavily doped grating layer is also grown on the substrate, and the heavily doped grating layer is grown between the upper electrode layer and the multiple quantum well active layer or between the multiple quantum well active layer and the lower electrode layer;
a transition layer is also grown on the substrate, and the transition layer is grown between the heavily doped grating layer and the multiple quantum well active layer;
the heavily doped grating layer has a one-dimensional or two-dimensional periodic sub-wavelength structure.
2. The detector of claim 1, wherein the material of the heavily doped grating layer is any one of gallium arsenide, aluminum arsenide, indium phosphide, aluminum phosphide, gallium nitride, indium nitride, aluminum nitride, or a ternary/quaternary compound thereof.
3. The detector of claim 1, wherein the heavily doped grating layer is doped n-type or p-type with a doping concentration of 1 x 1018cm-3～1×1021cm-3。
4. The detector of claim 1, wherein the grating pattern of the heavily doped grating layer comprises: strip, round, square, triangular.
5. The detector of claim 4, wherein when the grating pattern of the heavily doped grating layer is circular, the grating duty cycle of the heavily doped grating layer is 0.1-0.7;
when the grating pattern is other than a circle, the grating duty ratio is 0.1-0.9.
6. The detector of claim 1, wherein the heavily doped grating layer has a grating period of 0.5 μm-20 μm.
7. The detector of claim 1, wherein the heavily doped grating layer has a thickness of 2nm to 500 nm.
8. The detector of any of claims 1-7, wherein the heavily doped grating layer is spaced from the multiple quantum well active layer by a distance of 2nm to 500 nm.
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