CN102661797A - Shortwave infrared image detection device adopting up-conversion luminescent material - Google Patents
Shortwave infrared image detection device adopting up-conversion luminescent material Download PDFInfo
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- CN102661797A CN102661797A CN2012101289132A CN201210128913A CN102661797A CN 102661797 A CN102661797 A CN 102661797A CN 2012101289132 A CN2012101289132 A CN 2012101289132A CN 201210128913 A CN201210128913 A CN 201210128913A CN 102661797 A CN102661797 A CN 102661797A
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Abstract
The invention discloses a shortwave infrared image detection device adopting an up-conversion luminescent material, and belongs to the technical field of infrared imaging. The conventional shortwave infrared image detection device is complex in structure, high in cost and low in response speed, and has noise interference. According to the shortwave infrared image detection device adopting the up-conversion luminescent material provided by the invention, an imaging lens is positioned in front of a photodetector; a photodetector drive unit, an image storage unit and an imaging processing unit in a field programmable gate array (FPGA) master control chip are connected with the photodetector; the imaging processing unit is also connected with the image storage unit and a communication interface; the imaging lens is a visible light imaging lens; the photodetector is a visible photodetector; and an up-conversion luminescent material plate is positioned in front of the visible light imaging lens. The shortwave infrared image detection device adopting the up-conversion luminescent material is used for acquiring shortwave infrared images.
Description
Technical field
The present invention relates to a kind of short-wave infrared imaging detection device that adopts up-conversion luminescent material, be used to gather the short-wave infrared image, belong to the infrared imagery technique field.
Background technology
Short-wave infrared (1～2.5 μ m) imaging device is used very extensively in military fields such as night vision, investigation and supervision, remote sensing, fire control system, infrared imaging guidance and photoelectronic warfares; Compared with developed countries; At present, in China army the application of infrared imaging equipment less, its demand is quite big; At civil area, the short-wave infrared imaging system is widely used in fields such as fire-fighting, electric power, building, security protection, and in China, the application of infrared imaging equipment in these industries also is in the starting stage, and technology is relatively deficienter, but development space is huge.
The short-wave infrared imaging device has the short-wave infrared imager.In the short-wave infrared imager, the short-wave infrared imaging detection device is a core ingredient.Typical short-wave infrared imaging detection device is imaged in the infrared image of surveying on the infrared photoelectric detector 2 by infrared imaging lens 1; See shown in Figure 1; Photodetector drive unit drives infrared photoelectric detector 2 in the FPGA main control chip is gathered infrared image; The infrared image of being gathered is directly perhaps sent into the graphics processing unit in the FPGA main control chip through the image storage unit in the FPGA main control chip, and the communication interface of the infrared image after the processing in the FPGA main control chip sends host computer 4 to.Described infrared imaging lens 1 adopt infra-red material to make, and are the GaP of 0.55～14 μ m, the ZnS (s) that service band is 0.6～12 μ m etc. like service band, cost an arm and a leg.2 of described infrared photoelectric detectors are processed by non-silicon semiconductor material, and cost is high; For the infrared energy that infrared photoelectric detector 2 is absorbed leaves rapidly; Need to use semiconductor chilling plate to freeze as inner low-temperature receiver, still, this measure causes short-wave infrared imaging detection device complex structure, cost height; Reduce response speed, noise also occurs.
The visible light photodetector adopts silicon semiconductor material to make, and cost is low, need not refrigeration.Optical lens in its imaging optical system of imaging detection device of employing visible light photodetector also is a kind of visible light optical lens, and cost is low.
Up-conversion luminescent material has the anti-Stokes effect, and when exciting light was infrared light, luminous then was visible light.The exercise use of up-conversion luminescent material is limited to upconversion laser, 3 D stereo demonstration, anti-counterfeit recognition etc.The up-conversion luminescent material of sulfide system has the outstanding feature of wide spectrum, low threshold value infrared response, is applied to fields such as infrared acquisition such as the adjusting of infrared laser light path, spot detection, light beam check and correction, the demonstration of emission light and the tracking of emission light.
Summary of the invention
In order to simplify short-wave infrared imaging detection device structure, to reduce cost, have advantages such as response speed is fast, response lag is low, response spectrum is wide simultaneously, we have invented a kind of short-wave infrared imaging detection device that adopts up-conversion luminescent material.
In the short-wave infrared imaging detection device of the present invention's employing up-conversion luminescent material, see shown in Figure 2, before imaging len is positioned at photodetector; Photodetector driver element in the FPGA main control chip, image storage unit, graphics processing unit are connected with photodetector; Graphics processing unit also is connected with image storage unit and communication interface; It is characterized in that; Imaging len is visual light imaging lens 3, and photodetector is a visible light photodetector 4, and up-conversion luminescent material plate 5 is positioned at visual light imaging lens 3 the place aheads.
Because the present invention is provided with up-conversion luminescent material plate 5 in the forefront of short-wave infrared imaging detection device; Therefore; Thereafter optical element and photovalve all can adopt the visible light element, like visual light imaging lens 3 and visible light photodetector 4, because the relative infrared components cost of visible light element is lower; And visible light photodetector 4 need not reasons such as refrigeration; The present invention's short-wave infrared imaging detection device cost is low, simple in structure, and in conjunction with the characteristics that up-conversion luminescent material had, the present invention's short-wave infrared imaging detection device has advantages such as response speed is fast, response lag is low, response spectrum is wide.When the up-conversion luminescent material that is adopted is sulfide infrared up-conversion luminous material CaS:Eu
2+, Sm
3+The time, the response wave band of last conversion spectrum is 800nm～1610nm, its crest is positioned at 1200nm, sees the curve b among Fig. 3, can satisfy short-wave infrared (1～2.5 μ m) image detection needs fully.Up-conversion luminescence spectrum then is positioned at visible light wave range, and the crest of up-conversion luminescence is positioned at 630nm, sees the curve a among Fig. 3, realizes the conversion of short-wave infrared to visible light fully.
Description of drawings
Fig. 1 is existing short-wave infrared imaging detection device structure and detection process synoptic diagram.Fig. 2 is the short-wave infrared imaging detection device structure and the detection process synoptic diagram of the present invention's employing up-conversion luminescent material, and this figure is simultaneously as Figure of abstract.Fig. 3 is conversion spectrum, a up-conversion luminescence spectral curve on the sulfide infrared up-conversion luminous material that adopts of the present invention.Fig. 4 is the FPGA main control chip control program block diagram that has now in the short-wave infrared imaging detection device that reaches the present invention.
Embodiment
In the short-wave infrared imaging detection device of the present invention's employing up-conversion luminescent material, see shown in Figure 2, before visual light imaging lens 3 are positioned at visible light photodetector 4.Up-conversion luminescent material plate 5 is positioned at visual light imaging lens 3 the place aheads.Visible light photodetector 4 is for adopting the CCD with intermediate resolution (1280 * 1024) or the cmos digital imageing sensor of silicon semiconductor material manufacturing.The up-conversion luminescent material that is adopted is sulfide infrared up-conversion luminous material CaS:Eu
2+, Sm
3+Photodetector driver element in the FPGA main control chip, image storage unit, graphics processing unit are connected with photodetector, and graphics processing unit also is connected with image storage unit and communication interface, communication interface such as USB2.0 interface.The FPGA main control chip is seen shown in Figure 4 according to the work of control program control short-wave infrared imaging detection device.
Claims (3)
1. short-wave infrared imaging detection device that adopts up-conversion luminescent material is before imaging len is positioned at photodetector; Photodetector driver element in the FPGA main control chip, image storage unit, graphics processing unit are connected with photodetector; Graphics processing unit also is connected with image storage unit and communication interface; It is characterized in that; Imaging len is visual light imaging lens (3), and photodetector is visible light photodetector (4), and up-conversion luminescent material plate (5) is positioned at visual light imaging lens (3) the place ahead.
2. short-wave infrared imaging detection device according to claim 1 is characterized in that, CCD or the cmos digital imageing sensor of visible light photodetector (4) for adopting silicon semiconductor material to make.
3. short-wave infrared imaging detection device according to claim 1 is characterized in that, the up-conversion luminescent material that is adopted is sulfide infrared up-conversion luminous material CaS:Eu
2+, Sm
3+
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| CN2012101289132A CN102661797A (en) | 2012-04-27 | 2012-04-27 | Shortwave infrared image detection device adopting up-conversion luminescent material |
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| CN2012101289132A CN102661797A (en) | 2012-04-27 | 2012-04-27 | Shortwave infrared image detection device adopting up-conversion luminescent material |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104048765A (en) * | 2014-06-11 | 2014-09-17 | 中国科学院高能物理研究所 | Infrared imaging device based on coding bore diameters |
| CN111623875A (en) * | 2020-06-05 | 2020-09-04 | 长春理工大学 | Spectrum chip based on spectrum up-conversion material and control method thereof |
Citations (2)
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| CN102004219A (en) * | 2010-09-17 | 2011-04-06 | 南京理工大学 | Infrared focal plane array detector simulation device and method |
| WO2011066396A2 (en) * | 2009-11-24 | 2011-06-03 | University Of Florida Research Foundation, Inc. | Method and apparatus for sensing infrared radiation |
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2012
- 2012-04-27 CN CN2012101289132A patent/CN102661797A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011066396A2 (en) * | 2009-11-24 | 2011-06-03 | University Of Florida Research Foundation, Inc. | Method and apparatus for sensing infrared radiation |
| CN102004219A (en) * | 2010-09-17 | 2011-04-06 | 南京理工大学 | Infrared focal plane array detector simulation device and method |
Non-Patent Citations (2)
| Title |
|---|
| 王运波，等: "利用电子俘获材料研制复合型短波红外探测器", 《光学技术》, vol. 35, no. 4, 31 July 2009 (2009-07-31), pages 483 - 485 * |
| 谢大兵，等: "基于红外上转换原理的短波红外阵列探测器研究", 《红外技术》, vol. 32, no. 1, 31 January 2010 (2010-01-31), pages 7 - 10 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104048765A (en) * | 2014-06-11 | 2014-09-17 | 中国科学院高能物理研究所 | Infrared imaging device based on coding bore diameters |
| CN111623875A (en) * | 2020-06-05 | 2020-09-04 | 长春理工大学 | Spectrum chip based on spectrum up-conversion material and control method thereof |
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Application publication date: 20120912 |