WO2011047263A1 - Concentrés et suspensions de polissage hautement diluables - Google Patents

Concentrés et suspensions de polissage hautement diluables Download PDF

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Publication number
WO2011047263A1
WO2011047263A1 PCT/US2010/052844 US2010052844W WO2011047263A1 WO 2011047263 A1 WO2011047263 A1 WO 2011047263A1 US 2010052844 W US2010052844 W US 2010052844W WO 2011047263 A1 WO2011047263 A1 WO 2011047263A1
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WIPO (PCT)
Prior art keywords
concentrate
mechanical polishing
chemical mechanical
polishing slurry
oxidizer
Prior art date
Application number
PCT/US2010/052844
Other languages
English (en)
Inventor
Hyungjun Kim
Richard Wen
Bin Hu
Minae Tanaka
Deepak Mahulikar
Original Assignee
Planar Solutions, Llc
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Application filed by Planar Solutions, Llc filed Critical Planar Solutions, Llc
Priority to JP2012534394A priority Critical patent/JP5758905B2/ja
Priority to EP10824165.4A priority patent/EP2489066A4/fr
Publication of WO2011047263A1 publication Critical patent/WO2011047263A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Definitions

  • the present disclosure relates to concentrates that can be diluted for use in wafer polishing applications.
  • the present disclosure relates to a
  • CMP chemical-mechanical polishing
  • Copper is a commonly used material for forming interconnects in semiconductor manufacturing.
  • the isolated copper wires are made by polishing and clearing copper and barrier metal between the inlaid wires.
  • Copper and barrier layer CMP involves polishing of copper and barrier layers. It is desired to polish the wafers at a high removal rate of material to enhance throughput, while still maintaining favorable wafer characteristics such as a low number of overall defects.
  • a typical copper CMP process consists of 3 process steps.
  • the electro- plated copper overburden (up to 2 urn in thickness depending on technology node) is rapidly polished down at a relatively high down force, leaving some amount of copper until the deposition topography is fully planarized. (See Figure 1 )
  • Throughput and planarization efficiency and low defects are key needs.
  • the remaining copper overburden after full planarization during the first step is polished off at a lower down force, with a stop on the barrier layer.
  • the goal is to clear all copper from the barrier metal, but achieve significantly low dishing on the inlaid copper wire, with very low defects and improved surface roughness. Throughput is also important.
  • This step can be combined with the first step, depending on the polisher type or configuration.
  • the thin barrier layer left after the second step is polished off with significant topography correction, low erosion and low defects.
  • the slurry for the first two steps may be the same or different.
  • the barrier layer slurry, however, is usually a different composition.
  • CMP slurries are made as concentrates. These concentrates have the benefit of being cheaper to make and ship, which reduces the cost of ownership (COO) of the CMP slurry.
  • the customer can simply add water and oxidizer at the point of use (POU), to form the POU slurry.
  • POU point of use
  • CMP polishing compositions are made at a concentrate level where they are stable for at least 6 months of shelf life.
  • the disadvantage to these slurries, however, is that they can not be highly diluted (i.e.
  • the present disclosure provides a concentrate that can be diluted to form a CMP slurry.
  • the concentrate comprises abrasive, complexing agent, corrosion inhibitor, and water, in addition to other optional ingredients.
  • the concentrate of the present disclosure can be diluted at a rate of up to 50X or more, while still maintaining excellent performance.
  • the present disclosure provides a concentrate for use in a chemical mechanical polishing slurry, comprising about 0.5 wt% to about 10 wt% of an abrasive, about 1 wt% to about 20 wt% of a complexing agent, and 0.001 wt% to about 0.1 wt% of a corrosion inhibitor.
  • the present disclosure provides a method of preparing a chemical mechanical polishing slurry.
  • the method comprises the step of adding water and oxidizer to a concentrate, wherein the concentrate comprises about 0.5 wt% to about 10 wt% of an abrasive, about 1 wt% to about 20 wt% of a complexing agent, and 0.001 wt% to about 0.1 wt% of a corrosion inhibitor.
  • the water and oxidizer can be added to the concentrate in an amount governed by the formula:
  • Fig. 1 is a depiction of a copper CMP process
  • Fig. 2 is a graphical representation of the concentrates of the prior art when compared to those of the present disclosure
  • Fig. 3 is a plot of the ratio of a function of the amount of complexing agent to the amount of oxidizer in the concentrate, vs. the normalized copper removal rate of the slurry;
  • Fig. 4 shows a plot of the amount of complexing agent versus oxidizer for several different embodiments of the present disclosure
  • Fig. 5 shows the normalized removal rates for three CMP slurries according to the present disclosure
  • Fig. 6 shows a plot of the performance of a prior art slurry/concentrate according to the prior art at several dilution levels
  • Fig. 7 shows a plot of the performance of an additional slurry/concentrate of the prior art.
  • Fig. 8 shows a plot of the copper surface roughness of wafers polished with several different slurries according to the present disclosure.
  • the present disclosure provides copper polishing CMP concentrates that are highly dilutable, but retain key functional parameters such as high removal rates, favorable wafer topography, and low and defects, such as corrosion.
  • the CMP concentrates of the present disclosure can be diluted to up to 20X or more, and exhibit no significant change in performance over less diluted concentrates, for example 10X or 5X slurries. This is highly advantageous, in that users can minimize the amount of concentrate they need to keep on hand, thus keeping costs down, while maintaining the desired level of performance of the CMP slurry in the polishing application.
  • Figure 2 shows this relationship graphically.
  • CMP metal layers are removed by a combination of chemical and mechanical forces.
  • dissolution or ionization
  • the removal of copper ions can be enhanced by a reaction with a complexing agent that can form a complex with the copper layer.
  • This complex is typically softer or more porous than the copper layer before the CMP slurry is applied, so it can be removed more easily.
  • An oxidizer is also useful in CMP slurries, as it forms a copper oxide layer, which is also more easily removed.
  • very high removal rates are needed, for example as high as 10000 A/min, so it is desirable to use powerful complexing agents and oxidizers.
  • a proper corrosion inhibitor can be used in the CMP slurry.
  • Abrasives are also a critical part of the removal of copper materials, and must have the proper hardness and morphology to remove copper oxide quickly. Ideally, a thin, soft, copper oxide and complex forms, and is rapidly removed without any corrosion, so it is important to balance the four components described above.
  • the formation of the copper oxides and complexes depend on the strength of the oxidizers and corrosion inhibitors used. A very strong oxidizer and corrosion inhibitor will result in thick hard oxide layer on the copper.
  • the passivation rate, or P can be defined as the rate at which the oxide layer is formed, and is usually measured as a rate of thickness increased per unit of time, for example Angstrom/min.
  • the removal of this layer can be mechanical as well as chemical.
  • the mechanical rate of removal of the complex and oxide layer, or M is defined as the thickness removed per unit of time, for example Angstrom/min.
  • the process is chemistry driven and the copper removal rates are lower than the ideal or peak values.
  • M > P the removal process is primarily mechanical, and the copper removal rates are also lower than ideal or peak values.
  • the present disclosure provides a concentrate that takes advantage of these principles, and which can be diluted to a POU slurry.
  • the concentrate comprises abrasive, complexing agent, corrosion inhibitor, water, and optional additional
  • the user will add water and oxidizer to the concentrate.
  • the amount of dilution that a user will require for a particular application will depend on several factors, though clearly, the less concentrate that is used to make a POU slurry, the more advantageous it is in terms of cost and material usage. A user will dilute the concentrate to a point at which significant cost and materials savings are realized, but the resulting POU still performs to the desired level.
  • A, B and C are constants for a particular formula.
  • A can be from 0.35 to 0.8, and has a unit of measurement identical to that for the complexing agent, in this case weight percentage.
  • B can be from 0.3 to 0.5, or 0.33 to 0.46.
  • C can vary slightly, but will remain about 1.
  • B and C are unitless constants.
  • brackets in the present disclosure e.g. "[complexing agent]”
  • concentration is expressed as a weight percentage of the concentrate as a whole.
  • the ratio of the amount of oxidizing agent to the function / is known as the "oxidizer ratio.”
  • the oxidizer ratio should be between about 0.8 and about 2.0, or about 0.8 and about 1.3.
  • the amounts of the oxidizing agent and the complexing agent in the POU slurry should be chosen so that they satisfy this relationship. This will ensure that P « M, which as described above provides optimal conditions for the CMP process. When these conditions are satisfied, the present disclosure has provided a highly dilutable concentrate for use in copper CMP applications, wherein copper removal rates stay high and stable after diluting down to 20X or beyond, wherein corrosion resistance remains high, and surface roughness remains low. This is highly advantageous over currently available
  • the concentrate further comprises abrasives and corrosion inhibitors, as discussed below, as well as several optional additional ingredients such as surfactants, biocides, surface finishers, pH adjusters, and defect reduction agents.
  • the abrasives can be selected from the group consisting of alumina, fumed silica, colloidal silica, coated particles, titania, ceria, zirconia, or any combinations thereof. In one embodiment, the abrasive is colloidal silica.
  • the abrasives can be present in an amount of about 0.5 wt% to about 10 wt%, or in an amount of about 1 wt% to about 5 wt%, each based on the total amount of concentrate.
  • the oxidizer can be selected form the group consisting of hydrogen peroxide, ammonium persulfate, silver nitrate (AgN03), ferric nitrates or chlorides, per acids or salts, ozone water, potassium ferricyanide, potassium dichromate, potassium iodate, potassium bromate, vanadium trioxide, hypochlorous acid, sodium hypochlorite, potassium hypochlorite, calcium hypochlorite, magnesium hypochlorite, ferric nitrate, KMg0 4 , other inorganic or organic peroxides, or mixtures thereof.
  • the oxidizer is hydrogen peroxide.
  • the oxidizer can be present in an amount so that the POL) slurry has about 0.1 wt% to about 5 wt% of oxidizer, or from about 0.4 wt% to about 2 wt%, so long as it satisfies the above-described relationship to the amount of complexing agent.
  • the complexing agent can be any compound that performs the desired function.
  • the complexing agent is selected from the group consisting of organic acids and their salts, amino acetic acids, amino acids such as glycine or alanine, carboxylic acids, polyamines, ammonia based compounds, quaternary ammonium compounds, inorganic acids, compounds with both carboxylic and amino functions, such as ethylenediaminetetraacetic acid and diethylene triamine pentaacetic acid, or any mixtures thereof.
  • the complexing agent is glycine.
  • the complexing agent can be present in an amount of about 1 wt% to about 20 wt%, or about 5 wt% to 13 wt%, each based on the total weight of the concentrate.
  • the corrosion inhibitor can be selected from the group consisting of
  • the corrosion inhibitor is a benzoriazole derivative.
  • the corrosion inhibitor can be present in an amount of about 100 ppm to about 0,000 ppm, based on the weight of the concentrate, or a range of about 100 ppm to about 2000 ppm.
  • the corrosion inhibitor can also be present in an amount so that the POL) slurry has about 10 parts per million (ppm) to about 1000 ppm, or from about 10 ppm to about 200 ppm.
  • a plot of the oxidizer ratio vs. the normalized removal rate i.e. the ratio of actual removal rate to the peak removal rate.
  • the oxidizer ratio is between 0.8 and 2.0
  • the normalized removal rate is higher than 0.75, which is regarded as a high removal rate range providing relatively stable and reproducible removal rate values.
  • the ratio is between 0.8 and 1.3, i.e. when P « M
  • the normalized removal rate is even higher, almost always over 0.8, and is often at 1.0, meaning that the slurry is operating at the peak removal rate.
  • Fig. 4 shows a plot of the amount of oxidizer that can be present at a given complexing agent concentration, according to one embodiment of the present disclosure, where the oxidizer ratio is 1.0.
  • A is between 0.35 and 0.8
  • B is between 0.33 and 0.46.
  • the slurry will provide a normalized removal rate of 0.8 or greater. If the slurry has complexing agent and oxidizer concentrations that are outside this region, the performance of the slurry will drop.
  • Fig. 4 also shows, in dotted line, the relationship between the concentrations of complexing agent and oxidizer at the peak removal rate for the slurry.
  • Fig. 5 shows the normalized removal rates for three CMP slurries according to the present disclosure.
  • the tests were conducted using an Applied Materials Mirra polisher, a RHEM IC1010 polishing pad, and at a 3 p.s.i. polishing down force.
  • the shown compositions were prepared using a concentrate comprising 13 wt% of complexing agent, 1 wt% abrasives, and a pH of about 7.5.
  • Compositionl is a 5X dilution of the concentrate of the present disclosure.
  • composition 1 is diluted 7X (i.e., a 35X dilution of the concentrate), or even 10X (i.e., a 50X dilution of the concentrate), the removal rate remains very high.
  • the 50X dilution CMP slurry still operates at 90% of the removal rate of the 5X dilution CMP slurry.
  • FIG. 6 shows the performance of a prior art slurry/concentrate according to the prior art.
  • Comp28 is Comparative Example 2 of Table 1 in United States Patent No. 6,428,721 , which was discussed above.
  • the data shown have been T U 2010/052844 reproduced using Comp28 with various dilution ratios.
  • T U 2010/052844 reproduced using Comp28 with various dilution ratios.
  • Comp28 is compared to a more concentrated formulation of itself, as shown in Fig. 6. Clearly, then, the performance of the slurries of the prior art suffers significantly when the slurries are diluted.
  • Fig. 7 shows an even more drastic example of a prior art CMP slurry whose removal performance suffers dramatically when it is diluted.
  • Fig. 7. Comp6 is example 6 of Table 1 in United States Patent No. 6,428,721. When Comp6 is diluted 5X, the normalized removal rate drops off almost 80%. Again, this shows that the performance of prior art slurries suffers significantly when they are diluted.
  • Fig. 8 shows surface roughness data for several slurries according to the present disclosure. As can be seen in the Figure, slurries diluted to various levels all exhibited similar surface roughness data, within acceptable noise levels. There is a minor drop in the surface roughness of the 10X slurry, but this is not considered statistically significant,
  • dilution ratios as high as 20X were achieved without any loss of functional performance at all, and higher ratios, such as the 50X described above, were achieved with minimal performance loss. Higher dilution rates are also possible if one accepts lower optimal copper removal rates. If, instead of 80% of the peak removal rates, one can accept 60%, the dilution ratio can be increased, to as much as more than 50X.
  • abrasive solid particles that aid in mechanical removal of wafer surface
  • ⁇ normalized removal rate the ratio of a particular removal rate to that of a reference, such as the peak removal rate, or the removal rate of a baseline composition
  • oxidizer level for peak removal rate the oxidizer concentration that corresponds to the peak removal rate
  • ⁇ oxidizer ratio the ratio of the peroxide concentration to the concentration of the complexing agent

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

La présente invention porte sur un concentré destiné à être utilisé dans des suspensions de polissage chimiques-mécaniques, et sur un procédé de dilution de ce concentré jusqu'à un point d'utilisation de suspension. Le concentré comprend un abrasif, un agent complexant et un inhibiteur de corrosion, et le concentré est dilué avec de l'eau et un oxydant. Ces composants sont présents sous des quantités telles que le concentré peut être dilué à des taux de dilution très élevés, sans affecter les performances de polissage.
PCT/US2010/052844 2009-10-16 2010-10-15 Concentrés et suspensions de polissage hautement diluables WO2011047263A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012534394A JP5758905B2 (ja) 2009-10-16 2010-10-15 高希釈可能な研磨濃縮物及びスラリー
EP10824165.4A EP2489066A4 (fr) 2009-10-16 2010-10-15 Concentrés et suspensions de polissage hautement diluables

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/580,868 US8192644B2 (en) 2009-10-16 2009-10-16 Highly dilutable polishing concentrates and slurries
US12/580,868 2009-10-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP14150131.2A Previously-Filed-Application EP2746354A3 (fr) 2009-10-16 2010-10-15 Boues et concentrés de polissage fortement diluables

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WO2011047263A1 true WO2011047263A1 (fr) 2011-04-21

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US (3) US8192644B2 (fr)
EP (2) EP2489066A4 (fr)
JP (1) JP5758905B2 (fr)
KR (2) KR101238930B1 (fr)
TW (2) TWI445810B (fr)
WO (1) WO2011047263A1 (fr)

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WO2014061417A1 (fr) * 2012-10-16 2014-04-24 日立化成株式会社 Solution de polissage pour cmp, solution mère, et méthode de polissage
EP2818526A1 (fr) * 2013-06-27 2014-12-31 Air Products And Chemicals, Inc. Compositions de pâte de polissage chimique mécanique et procédé d'utilisation de celui-ci pour des applications d'interconnexion et de cuivre
CN104449399A (zh) * 2014-11-25 2015-03-25 河北工业大学 一种适用于蓝宝石a面的化学机械抛光组合物

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US8956974B2 (en) * 2012-06-29 2015-02-17 Micron Technology, Inc. Devices, systems, and methods related to planarizing semiconductor devices after forming openings
KR101526006B1 (ko) * 2012-12-31 2015-06-04 제일모직주식회사 구리 연마용 cmp 슬러리 조성물　및 이를 이용한 연마 방법
KR101526005B1 (ko) * 2012-12-31 2015-06-04 제일모직주식회사 구리 연마용 cmp 슬러리 조성물　및 이를 이용한 연마 방법
US20140308814A1 (en) * 2013-04-15 2014-10-16 Applied Materials, Inc Chemical mechanical polishing methods and systems including pre-treatment phase and pre-treatment compositions

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KR101260279B1 (ko) 2013-05-09
US8404143B2 (en) 2013-03-26
EP2746354A2 (fr) 2014-06-25
EP2746354A3 (fr) 2017-12-27
EP2489066A1 (fr) 2012-08-22
TWI426112B (zh) 2014-02-11
US20130288478A1 (en) 2013-10-31
JP2013508952A (ja) 2013-03-07
KR20120103534A (ko) 2012-09-19
KR101238930B1 (ko) 2013-03-07
US20120145951A1 (en) 2012-06-14
TW201114862A (en) 2011-05-01
KR20110041961A (ko) 2011-04-22
TWI445810B (zh) 2014-07-21
US20110089143A1 (en) 2011-04-21
TW201300517A (zh) 2013-01-01
US8771540B2 (en) 2014-07-08
JP5758905B2 (ja) 2015-08-05
US8192644B2 (en) 2012-06-05

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