WO2011046373A3 - 비접촉 타입의 발광 다이오드 - Google Patents

비접촉 타입의 발광 다이오드 Download PDF

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Publication number
WO2011046373A3
WO2011046373A3 PCT/KR2010/007038 KR2010007038W WO2011046373A3 WO 2011046373 A3 WO2011046373 A3 WO 2011046373A3 KR 2010007038 W KR2010007038 W KR 2010007038W WO 2011046373 A3 WO2011046373 A3 WO 2011046373A3
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WO
WIPO (PCT)
Prior art keywords
light emitting
electrode
emitting diode
clad layer
layer
Prior art date
Application number
PCT/KR2010/007038
Other languages
English (en)
French (fr)
Other versions
WO2011046373A2 (ko
Inventor
홍진표
이종현
남혜원
이상효
이준석
Original Assignee
한양대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Publication of WO2011046373A2 publication Critical patent/WO2011046373A2/ko
Publication of WO2011046373A3 publication Critical patent/WO2011046373A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

전극과 클래드층 사이가 비접촉인 발광 다이오드가 개시된다. 기판 상에 제1 전극을 형성하고, 제1 전극 상부에 제1 클래드층을 형성한다. 제1 클래드층 상부에 형성된 절연층을 선택적으로 식각하여 다수의 핀 홀들을 형성한다. 핀 홀 내부에는 광활성층을 형성하고, 광활성층 상부에 제2 클래드층을 형성한다. 제2 전극은 절연층 상부에 형성되고, 제2 클래드층과 제2 전극이 비접촉 상태가 된다. 이를 통해 고전압의 전원을 발광 다이오드에 인가할 수 있다. 또한, 좁은 면적에 다수의 개별적인 발광구조를 실현하여 높은 휘도를 획득할 수 있다.
PCT/KR2010/007038 2009-10-16 2010-10-14 비접촉 타입의 발광 다이오드 WO2011046373A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0098566 2009-10-16
KR1020090098566A KR101593693B1 (ko) 2009-10-16 2009-10-16 비접촉 타입의 발광 다이오드

Publications (2)

Publication Number Publication Date
WO2011046373A2 WO2011046373A2 (ko) 2011-04-21
WO2011046373A3 true WO2011046373A3 (ko) 2011-07-14

Family

ID=43876711

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/007038 WO2011046373A2 (ko) 2009-10-16 2010-10-14 비접촉 타입의 발광 다이오드

Country Status (2)

Country Link
KR (1) KR101593693B1 (ko)
WO (1) WO2011046373A2 (ko)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970013441A (ko) * 1995-08-21 1997-03-29 빈센트 비. 인그라시아 유기 발광 다이오드 매트릭스 제조 방법
US5953362A (en) * 1997-12-15 1999-09-14 Pamulapati; Jagadeesh Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same
JP2000236111A (ja) * 1999-02-15 2000-08-29 Matsushita Electric Works Ltd 光源装置
KR20040029301A (ko) * 2001-08-22 2004-04-06 소니 가부시끼 가이샤 질화물 반도체소자 및 질화물 반도체소자의 제조방법
US20090242914A1 (en) * 2008-03-26 2009-10-01 Foxconn Technology Co., Ltd. Led assembly with high heat dissipating capability

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970013441A (ko) * 1995-08-21 1997-03-29 빈센트 비. 인그라시아 유기 발광 다이오드 매트릭스 제조 방법
US5953362A (en) * 1997-12-15 1999-09-14 Pamulapati; Jagadeesh Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same
JP2000236111A (ja) * 1999-02-15 2000-08-29 Matsushita Electric Works Ltd 光源装置
KR20040029301A (ko) * 2001-08-22 2004-04-06 소니 가부시끼 가이샤 질화물 반도체소자 및 질화물 반도체소자의 제조방법
US20090242914A1 (en) * 2008-03-26 2009-10-01 Foxconn Technology Co., Ltd. Led assembly with high heat dissipating capability

Also Published As

Publication number Publication date
KR101593693B1 (ko) 2016-02-15
KR20110041640A (ko) 2011-04-22
WO2011046373A2 (ko) 2011-04-21

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