WO2011040394A1 - 結晶性珪素膜の成膜方法およびプラズマcvd装置 - Google Patents
結晶性珪素膜の成膜方法およびプラズマcvd装置 Download PDFInfo
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- WO2011040394A1 WO2011040394A1 PCT/JP2010/066794 JP2010066794W WO2011040394A1 WO 2011040394 A1 WO2011040394 A1 WO 2011040394A1 JP 2010066794 W JP2010066794 W JP 2010066794W WO 2011040394 A1 WO2011040394 A1 WO 2011040394A1
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- gas
- plasma cvd
- crystalline silicon
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 48
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 71
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 44
- 239000007789 gas Substances 0.000 claims description 163
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- 230000005284 excitation Effects 0.000 claims description 5
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 3
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 claims description 3
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- 230000008569 process Effects 0.000 description 19
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- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
Definitions
- the present invention relates to a method for forming a crystalline silicon film and a plasma CVD apparatus.
- Crystalline silicon is a substance that can be highly doped, and is widely used in semiconductor elements such as diodes.
- a thermal CVD method or a plasma CVD method using plasma excited at a high frequency is used for the production of the crystalline silicon film.
- a plasma CVD method using plasma excited at a high frequency is used for the production of the crystalline silicon film.
- other than monosilane (SiH 4 ) is used as a raw material gas industrially from the viewpoint of suppressing defects in a crystalline silicon thin film to be formed.
- the present invention has been made in view of the above circumstances, and an object thereof is to provide a method for forming a high-quality crystalline silicon film at a high film formation rate by plasma CVD.
- the method for forming a crystalline silicon film according to the present invention uses a plasma CVD apparatus that generates plasma by introducing a microwave into a processing container using a planar antenna having a plurality of holes, and uses the formula Si n H 2n + 2 (where, n is a number equal to or greater than 2), and a plasma is generated by exciting a film-forming gas containing a silicon compound represented by the microwave and performing plasma CVD using the plasma.
- a crystalline silicon film is deposited.
- the silicon compound is preferably disilane or trisilane.
- the film forming gas preferably contains a rare gas.
- the film forming gas preferably contains hydrogen gas.
- the volume flow rate ratio of the silicon compound to the total flow rate of the film forming gas is preferably in the range of 0.5% to 10%.
- the plasma CVD by setting the pressure in the processing container within a range of 0.1 Pa to 10.6 Pa.
- the method for forming a crystalline silicon film of the present invention is preferably performed at a processing temperature of 250 ° C. or higher and 600 ° C. or lower.
- the power density of the microwave is preferably in a range of 2.56 W / cm 2 or less 0.25 W / cm 2 or more per area of the object.
- a bias voltage is applied to an object to be processed by applying high-frequency power to an electrode embedded in a mounting table for mounting the object to be processed during the plasma CVD. It is preferable to do.
- the plasma CVD apparatus of the present invention is a plasma CVD apparatus for forming a crystalline silicon film on a workpiece by plasma CVD,
- a processing container having an open top for accommodating the object to be processed;
- a mounting table disposed in the processing container and on which a target object is mounted;
- a dielectric member that closes the opening of the processing container;
- a planar antenna provided on top of the dielectric member and having a plurality of holes for introducing microwaves into the processing vessel;
- a gas introduction part for introducing a film forming gas into the processing container;
- An exhaust device for evacuating the inside of the processing vessel;
- a film-forming gas containing a silicon compound represented by the formula Si n H 2n + 2 (where n means a number of 2 or more) introduced into the processing vessel through the gas introduction unit is used for the planar antenna.
- a method of forming a crystalline silicon film is performed in which plasma is generated by excitation with the microwave introduced through the plasma, and plasma CVD is performed using the plasma to deposit a crystalline silicon film on the surface of the object to be processed. And a control unit for controlling the operation.
- the plasma CVD apparatus further includes an electrode embedded in the mounting table and a high-frequency power source connected to the electrode, and the control unit applies high-frequency power to the electrode during the plasma CVD.
- a plasma CVD apparatus that generates plasma by introducing a microwave into a processing container using a planar antenna having a plurality of holes is used, and the formula Si n H 2n + 2 (here And n represents a number of 2 or more) by performing plasma CVD using a film-forming gas containing a silicon compound, a crystalline silicon film at a high film-forming rate without lowering the degree of crystallinity. Can be formed.
- the method of the present invention can form a crystalline silicon film at a low temperature of 600 ° C. or lower, it can reduce the thermal budget and does not cause dopant diffusion during the film formation process. Useful.
- FIG. 1 is a schematic cross-sectional view showing an example of a plasma CVD apparatus suitable for forming a crystalline silicon film. It is drawing which shows the structure of a planar antenna. It is explanatory drawing which shows the structure of a control part. It is a graph which shows the relationship between the film-forming rate of a polysilicon film, and the film-forming gas flow rate. It is a graph which shows the relationship between the crystallinity degree of a polysilicon film, and film-forming gas flow rate. It is a graph which shows the relationship between the crystal orientation of a polysilicon film, and the film-forming gas flow rate. It is a graph which shows the relationship between the crystal orientation of a polysilicon film, and the film-forming pressure.
- FIG. 11 is a fragmentary cross-sectional view of the memory cell array of FIG. 10. It is drawing explaining the manufacturing process of a diode. It is drawing explaining the process following FIG. It is drawing explaining the process following FIG. 2 is a diagram illustrating a state where a polysilicon film to be a pin diode is laminated and formed.
- FIG. 1 is a cross-sectional view schematically showing a schematic configuration of a plasma CVD apparatus 100 that can be used in the method for producing a crystalline silicon film of the present invention.
- the plasma CVD apparatus 100 generates a plasma by introducing a microwave into a processing container using a planar antenna having a plurality of slot-shaped holes, particularly an RLSA (Radial Line Slot Antenna). It is configured as an RLSA microwave plasma processing apparatus that can generate microwave-excited plasma having a density and a low electron temperature.
- RLSA Random Line Slot Antenna
- the plasma CVD apparatus 100 treatment with plasma having a plasma density of 1 ⁇ 10 10 to 5 ⁇ 10 12 / cm 3 and a low electron temperature of 0.7 to 2 eV is possible. Therefore, the plasma CVD apparatus 100 can be suitably used for the purpose of forming a polysilicon film as a crystalline silicon film by plasma CVD in the manufacturing process of various semiconductor devices.
- the plasma CVD apparatus 100 includes, as main components, an airtight processing container 1, a gas supply device 18 that supplies a gas into the processing container 1, a gas introduction unit 14 that is connected to the gas supply device 18, An exhaust device 24 for evacuating the inside of the processing vessel 1, a microwave introducing device 27 that is provided above the processing vessel 1 and introduces microwaves into the processing vessel 1, and each component of the plasma CVD device 100 And a control unit 50 for controlling.
- the gas supply device 18 may not be included in the components of the plasma CVD apparatus 100 but may be configured to use an external gas supply device connected to the gas introduction unit 14.
- the processing container 1 is formed of a substantially cylindrical container that is grounded, and has an open top. Note that the processing container 1 may be formed of a rectangular tube-shaped container.
- the processing container 1 has a bottom wall 1a and a side wall 1b made of a material such as aluminum.
- a processing table 1 is provided with a mounting table 2 for horizontally supporting a silicon wafer (hereinafter simply referred to as a “wafer”) W as an object to be processed.
- the mounting table 2 is made of a material having high thermal conductivity, such as ceramics such as AlN.
- the mounting table 2 is supported by a cylindrical support member 3 that extends upward from the center of the bottom of the exhaust chamber 11 and is fixed to the bottom.
- the support member 3 is made of ceramics such as AlN, for example.
- the mounting table 2 is provided with a cover ring 4 that covers the outer edge portion thereof and guides the wafer W.
- the cover ring 4 is an annular member made of a material such as quartz, AlN, Al 2 O 3 , or SiN. From the viewpoint of protecting the mounting table 2, the cover ring 4 may cover the entire surface of the mounting table 2.
- a resistance heating type heater 5 as a temperature adjusting mechanism is embedded in the mounting table 2.
- the heater 5 is heated by the heater power supply 5a to heat the mounting table 2 and uniformly heats the wafer W, which is a substrate to be processed, with the heat.
- the mounting table 2 is provided with a thermocouple (TC) 6.
- TC thermocouple
- the heating temperature of the wafer W can be controlled in a range from room temperature to 900 ° C., for example.
- the mounting table 2 has wafer support pins (not shown) for supporting the wafer W and moving it up and down.
- Each wafer support pin is provided so as to protrude and retract with respect to the surface of the mounting table 2.
- an electrode 7 is embedded on the surface side of the mounting table 2.
- the electrode 7 is disposed between the heater 5 and the surface of the mounting table 2.
- a high-frequency power supply 9 for applying a bias is connected to the electrode 7 via a matching box (MB) 8 by a feeder line 7a.
- a high frequency power is supplied to the electrode 7 from a high frequency power source 9 so that a high frequency bias (RF bias) can be applied to the wafer W as a substrate. That is, the electrode 7, the power supply line 7 a, the matching box (MB) 8, and the high-frequency power source 9 constitute a bias applying unit.
- the material of the electrode 7 is preferably a material having a thermal expansion coefficient equivalent to that of ceramics such as AlN, which is the material of the mounting table 2, and is preferably a conductive material such as molybdenum or tungsten.
- the electrode 7 is formed, for example, in a mesh shape, a lattice shape, a spiral shape, or the like.
- the size of the electrode 7 is preferably at least equal to or slightly larger than the wafer W (for example, approximately 1 to 5 mm larger than the diameter of the wafer W).
- a circular opening 10 is formed at a substantially central portion of the bottom wall 1a of the processing container 1.
- An exhaust chamber 11 that communicates with the opening 10 and protrudes downward is provided on the bottom wall 1a.
- An exhaust pipe 12 is connected to the exhaust chamber 11 and is connected to an exhaust device 24 via the exhaust pipe 12.
- An annular plate 13 having a function as a lid for opening and closing the processing container 1 is disposed at the upper end of the side wall 1b forming the processing container 1.
- the inner peripheral lower part of the plate 13 protrudes toward the inner side (inside the processing container space) to form an annular support part 13a.
- a gas introduction part 14 for introducing a processing gas is disposed above the processing container 1.
- the plate 13 is provided with a first gas introduction part 14a having a first gas introduction hole.
- a second gas introduction part 14 b having a second gas introduction hole is provided on the side wall 1 b of the processing container 1. That is, the first gas introduction part 14 a and the second gas introduction part 14 b are provided in two upper and lower stages to constitute the gas introduction part 14.
- the first gas introduction part 14a and the second gas introduction part 14b are connected to a gas supply device 18 for supplying a film forming gas and a plasma excitation gas.
- the first gas introduction part 14a and the second gas introduction part 14b may be provided in a nozzle shape or a shower head shape.
- both the first gas introduction part 14 a and the second gas introduction part 14 b may be provided on the side wall 1 b of the processing container 1.
- a loading / unloading port 16 for loading / unloading the wafer W between the plasma CVD apparatus 100 and a transfer chamber (not shown) adjacent to the plasma CVD apparatus 100 is provided on the side wall 1b of the processing container 1.
- a gate valve 17 for opening and closing 16 is provided.
- the gas supply device 18 supplies a film forming gas or the like into the processing container 1, and includes an inert gas supply source 19a, a hydrogen gas supply source 19b, and a silicon compound gas (Si compound gas) supply source containing a silicon compound. 19c, a dopant gas supply source 19d, and a hydrogen gas supply source 19e.
- the inert gas supply source 19a and the hydrogen gas supply source 19b are connected to the first gas introduction part 14a via the gas lines 20a and 20b and the gas line 20f.
- the silicon compound gas supply source 19c, the dopant gas supply source 19d, and the hydrogen gas supply source 19e are connected to the second gas introduction unit 14b through the gas lines 20c, 20d, 20e, and the gas line 20g. .
- the gas supply device 18 includes, as gas supply sources (not shown) other than those described above, for example, a cleaning gas supply source for cleaning the inside of the processing container 1, a purge gas supply source used when replacing the atmosphere in the processing container 1, and the like. You may have.
- a silicon compound gas that is a film forming raw material a gas of a silicon compound in which the number of silicon atoms contained in the molecule is 2 or more, more specifically, the formula Si n H 2n + 2 (where n is 2 A silicon compound gas represented by the above number is used.
- This silicon compound is preferably a compound composed of a silicon atom and a hydrogen atom.
- disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ), or the like can be used. You may use these in combination of 2 or more type.
- an inert gas, hydrogen gas, dopant gas, or the like can be used as the film forming gas. Since the inert gas and the hydrogen gas are plasma forming gases that have a function of stably forming the plasma generated in the processing vessel 1, it is preferable to mix them in the film forming gas.
- the inert gas for example, a rare gas can be used.
- the rare gas is useful for generating stable plasma as a plasma excitation gas.
- Ar gas, Kr gas, Xe gas, He gas, or the like can be used.
- Examples of the dopant gas include PH 3 and AsH 3 when forming an n-type polysilicon film, and B 2 H 6 when forming a p-type polysilicon film.
- the inert gas and the hydrogen gas are merged from the inert gas supply source 19a and the hydrogen gas supply source 19b of the gas supply device 18 to the gas line 20f via the gas lines 20a and 20b, and then to the first gas introduction unit 14a. Finally, it is introduced into the processing container 1 from the first gas introduction part 14a.
- the silicon compound gas, the dopant gas, and the hydrogen gas joined from the silicon compound gas supply source 19c, the dopant gas supply source 19d, and the hydrogen gas supply source 19e to the gas line 20g through the gas lines 20c, 20d, and 20e, respectively.
- the second gas introduction part 14b is reached and introduced into the processing container 1 from the second gas introduction part 14b.
- Each gas line 20a to 20e connected to each gas supply source is provided with mass flow controllers 21a to 21e and front and rear opening / closing valves 22a to 22e.
- the supplied gas can be switched and the flow rate can be controlled.
- an inert gas or hydrogen gas for plasma excitation such as Ar, is an arbitrary gas and is not necessarily supplied simultaneously with the film forming gas.
- the exhaust device 24 includes a high-speed vacuum pump such as a turbo molecular pump. As described above, the exhaust device 24 is connected to the exhaust chamber 11 of the processing container 1 through the exhaust pipe 12. By operating the exhaust device 24, the gas in the processing container 1 flows uniformly into the space 11a in the exhaust chamber 11, and is further exhausted to the outside through the exhaust pipe 12 from the space 11a. Thereby, the inside of the processing container 1 can be depressurized at a high speed, for example, to 0.133 Pa.
- the microwave introduction device 27 includes a transmission plate 28, a planar antenna 31, a slow wave material 33, a cover member 34, a waveguide 37, and a microwave generation device 39 as main components.
- the microwave introduction device 27 is a plasma generation unit that introduces a microwave into the processing container 1 to generate plasma.
- the transmission plate 28 as a dielectric member is provided on a support portion 13 a that protrudes to the inner peripheral side of the plate 13.
- the transmission plate 28 is made of a dielectric material that transmits microwaves, for example, ceramics such as quartz, Al 2 O 3 , and AlN. In particular, when used as a plasma CVD apparatus, ceramics such as Al 2 O 3 and AlN are preferable.
- a gap between the transmission plate 28 and the support portion 13a is hermetically sealed through a seal member 29. Therefore, the upper opening of the processing container 1 is closed by the transmission plate 28 via the plate 13, and the inside of the processing container 1 is kept airtight.
- the planar antenna 31 is provided above the transmission plate 28 so as to face the mounting table 2.
- the planar antenna 31 has a disk shape.
- the shape of the planar antenna 31 is not limited to a disk shape, and may be a square plate shape, for example.
- the planar antenna 31 is locked to the upper end of the plate 13.
- the planar antenna 31 is made of, for example, a copper plate, a nickel plate, a SUS plate or an aluminum plate whose surface is plated with gold or silver.
- the planar antenna 31 has a number of slot-shaped microwave radiation holes 32 that radiate microwaves.
- the microwave radiation holes 32 are formed through the planar antenna 31 in a predetermined pattern.
- each microwave radiation hole 32 has an elongated rectangular shape (slot shape), and two adjacent microwave radiation holes form a pair. And typically, the adjacent microwave radiation holes 32 are arranged in an “L” shape. Further, the microwave radiation holes 32 arranged in combination in a predetermined shape (for example, L-shape) are further arranged concentrically as a whole.
- the length and arrangement interval of the microwave radiation holes 32 are determined according to the wavelength ( ⁇ g) of the microwave.
- the interval between the microwave radiation holes 32 is arranged to be ⁇ g / 4 to ⁇ g.
- the interval between adjacent microwave radiation holes 32 formed concentrically is indicated by ⁇ r.
- the microwave radiation hole 32 may have another shape such as a circular shape or an arc shape.
- the arrangement form of the microwave radiation holes 32 is not particularly limited, and may be arranged in a spiral shape, a radial shape, or the like in addition to the concentric shape.
- a slow wave material 33 having a dielectric constant larger than that of a vacuum, for example, quartz, Al 2 O 3 , AlN, resin, or the like is provided.
- the slow wave material 33 has a function of adjusting the plasma by shortening the wavelength of the microwave because the wavelength of the microwave becomes longer in vacuum.
- planar antenna 31 and the transmission plate 28 and the slow wave member 33 and the planar antenna 31 may be brought into contact with or separated from each other, but are preferably brought into contact with each other.
- a cover member 34 is provided above the plate 13 so as to cover the planar antenna 31 and the slow wave material 33.
- the cover member 34 is made of a metal material such as aluminum or stainless steel.
- the plate 13 and the cover member 34 are sealed by a seal member 35.
- a cooling water channel 34 a is formed inside the cover member 34. By allowing cooling water to flow through the cooling water flow path 34a, the cover member 34, the slow wave material 33, the planar antenna 31 and the transmission plate 28 can be cooled.
- the cover member 34 is grounded.
- An opening 36 is formed at the center of the upper wall (ceiling part) of the cover member 34, and a waveguide 37 is connected to the opening 36.
- a microwave generator 39 that generates microwaves is connected to the other end of the waveguide 37 via a matching circuit 38.
- the waveguide 37 includes a coaxial waveguide 37a having a circular cross section extending upward from the opening 36 of the cover member 34, and a rectangular guide extending in the horizontal direction connected to the upper end of the coaxial waveguide 37a. And a wave tube 37b.
- An inner conductor 41 extends in the center of the coaxial waveguide 37a.
- the inner conductor 41 is connected and fixed to the center of the planar antenna 31 at its lower end. With such a structure, the microwave is efficiently and uniformly propagated radially and uniformly to the planar antenna 31 via the inner conductor 41 of the coaxial waveguide 37a.
- the microwave generated by the microwave generation device 39 is propagated to the planar antenna 31 through the waveguide 37 and further into the processing container 1 through the transmission plate 28. It has been introduced.
- the microwave frequency for example, 2.45 GHz is preferably used, and 8.35 GHz, 1.98 GHz, or the like can be used.
- the control unit 50 includes a computer, and includes, for example, a process controller 51 including a CPU, a user interface 52 connected to the process controller 51, and a storage unit 53 as illustrated in FIG.
- the process controller 51 includes each component (for example, the heater power source 5a, the high frequency power source 9, and the like related to process conditions such as temperature, pressure, gas flow rate, microwave output, and high frequency output for bias application).
- the gas supply device 18, the exhaust device 24, the microwave generator 39, and the like) are controlled.
- the user interface 52 includes a keyboard on which a process administrator manages command input to manage the plasma CVD apparatus 100, a display that visualizes and displays the operating status of the plasma CVD apparatus 100, and the like.
- the storage unit 53 stores a recipe in which a control program (software) for realizing various processes executed by the plasma CVD apparatus 100 under the control of the process controller 51 and processing condition data are recorded. Yes.
- recipes such as the control program and processing condition data may be stored in a computer-readable storage medium such as a CD-ROM, hard disk, flexible disk, flash memory, DVD, or Blu-ray disk. Alternatively, it may be transmitted from other devices as needed via, for example, a dedicated line and used online.
- the gate valve 17 is opened, and the wafer W is loaded into the processing container 1 from the loading / unloading port 16 and mounted on the mounting table 2.
- an inert gas supply source 19a, a hydrogen gas supply source 19b, a silicon compound gas supply source 19c, and a hydrogen gas supply source 19e of the gas supply device 18 are further exhausted under reduced pressure while the processing container 1 is evacuated.
- the treatment pressure is preferably in the range of 0.1 Pa to 10.6 Pa, more preferably in the range of 0.1 Pa to 5.3 Pa.
- the lower the processing pressure, the better, and the lower limit of 0.1 Pa in the above range is a value set based on restrictions on the apparatus (limit of high vacuum).
- the processing pressure exceeds 10.6 Pa, the crystallinity of polysilicon is lowered and the film quality is lowered, which is not preferable.
- the volume flow rate ratio of silicon compound gas such as Si 2 H 6 gas is set to 0.5% or more and 10% or less with respect to the total film forming gas flow rate. It is preferably 1% or more and 5% or less, and more preferably 1.25% or more and 2.5% or less. If the volume flow ratio of the silicon compound gas is 0.5% or less, a sufficient film formation rate cannot be obtained, and if it exceeds 10%, the film quality may be deteriorated.
- the flow rate of the silicon compound gas is 1 mL / min (sccm) or more and 100 mL / min (sccm) or less, preferably 1 mL / min (sccm) or more and 20 mL / min (sccm) or less so that the above flow rate ratio is obtained.
- the film forming gas contains hydrogen together with the silicon compound gas.
- Hydrogen has an action of repairing the crystal by entering a defect in the crystalline silicon film. Therefore, by adding hydrogen to the deposition gas, the crystallinity of the crystalline silicon film can be improved and the film quality can be improved.
- the volume flow rate ratio of hydrogen gas (H 2 gas / percentage of total film formation gas flow rate) is preferably 90% or more and 99.5% or less, and 95% or more and 99% or less with respect to the total film formation gas flow rate. It is more preferable that it is 97.5% or more and 98.75% or less.
- the flow rate of the hydrogen gas is 10 mL / min (sccm) or more and 1000 mL / min (sccm) or less, preferably 50 mL / min (sccm) or more and 500 mL / min (sccm) or less so that the above flow rate ratio is obtained. Can be set.
- the volume flow rate ratio of the inert gas to the total deposition gas flow rate is preferably 1% or more and 10% or less, and preferably 1% or more and 5%. % Or less is more preferable.
- the flow rate of the inert gas is 2 mL / min (sccm) to 100 mL / min (sccm), preferably 2 mL / min (sccm) to 50 mL / min (sccm) in the above flow rate ratio.
- the flow rate of the inert gas is, for example, 100 mL / min (sccm) or more and 1500 mL / min (sccm) or less. It is preferable that
- the temperature of the plasma CVD process is 600 ° C. or lower, preferably 250 ° C. or higher and 600 ° C. or lower, more preferably 250 ° C. or higher and 500 ° C., in order to reduce the thermal budget and suppress the diffusion of impurities. What is necessary is just to set in the following ranges.
- a microwave having a predetermined frequency, for example, 2.45 GHz, generated by the microwave generator 39 is guided to the waveguide 37 via the matching circuit 38.
- the microwave guided to the waveguide 37 sequentially passes through the rectangular waveguide 37 b and the coaxial waveguide 37 a and is supplied to the planar antenna 31 through the inner conductor 41. That is, the microwave propagates toward the planar antenna 31 in the coaxial waveguide 37a.
- the microwave is radiated from the slot-shaped microwave radiation hole 32 of the planar antenna 31 to the space above the wafer W in the processing chamber 1 through the transmission plate 28. At this time, the greater the microwave output, the higher the crystallinity of the polysilicon film to be formed.
- the microwave output is 0.25 to 2.56 W as the output density per area of the wafer W. preferably in the range of / cm 2, the microwave output can be selected to be the power density within the above range according to the purpose, for example, from the range of 500 W ⁇ 5000 W. Note that 5000 W, which is the upper limit of the microwave output, is a value set due to restrictions on the apparatus, and if possible, a microwave output exceeding the upper limit can be supplied.
- An electromagnetic field is formed in the processing container 1 by the microwave radiated from the planar antenna 31 through the transmission plate 28 to the processing container 1, and silicon compound gas, hydrogen gas and / or inert gas, and further dopant gas (added) Case), but each becomes plasma. Then, the dissociation of the source gas efficiently proceeds in the plasma, and by reaction of active species such as Si p H q and SiH q (where p and q are arbitrary numbers, the same applies hereinafter). A polysilicon film is deposited.
- high-frequency power having a predetermined frequency and magnitude is supplied from the high-frequency power source 9 to the electrode 7 of the mounting table 2 during the plasma CVD process, and a high-frequency bias voltage (hereinafter simply referred to as “RF bias”) is supplied. Can also be applied to the wafer W.
- RF bias high-frequency bias voltage
- the plasma electron temperature can be kept low, there is little damage to the film even when an RF bias is applied.
- application of RF bias in an appropriate range can attract Si ions in the plasma toward the wafer W, so that the crystallinity is improved and the quality of the polysilicon film is improved, and the film formation rate is further increased. This can be further improved.
- the frequency of the high frequency power supplied from the high frequency power source 9 is preferably in the range of 400 kHz to 60 MHz, and more preferably in the range of 450 kHz to 20 MHz.
- RF power is preferably applied in the range 0.585W / cm 2 or less power density as for example 0.012W / cm 2 or more per area of the wafer W, 0.012W / cm 2 or more 0.234W / cm It is more preferable to apply within the range of 2 or less.
- the high frequency power is preferably in the range of 10 W to 500 W, and more preferably in the range of 10 W to 200 W, and the RF bias can be applied to the electrode 7 so as to achieve the above output density.
- the above conditions are stored as recipes in the storage unit 53 of the control unit 50.
- the process controller 51 reads the recipe and sends a control signal to each component of the plasma CVD apparatus 100, such as the gas supply device 18, the exhaust device 24, the microwave generator 39, the heater power supply 5a, and the high-frequency power supply 9. As a result, a plasma CVD process under a desired condition is realized.
- Processing temperature (mounting table): 400 ° C
- Microwave power 3000W
- Processing pressure 5.3
- Silane gas flow rate 5, 10 or 20 mL / min (sccm)
- Ar gas flow rate 800 mL / min (sccm) in total with the silane-based gas
- the film formation rate tends to increase in proportion to the increase in the flow rate for any silicon compound, but the highest when Si 3 H 8 is used, followed by Si 2 H 6 .
- SiH 4 gave the lowest results.
- Si 3 H 8 showed a remarkable improvement of about 3 times and Si 2 H 6 of about 2 times the SiH 4 deposition rate.
- FIG. 5 shows that the crystallinity tends to slightly decrease with an increase in the flow rate of any silicon compound, but there is little difference depending on the type of silicon compound, and it has been confirmed that the film quality is substantially equivalent.
- FIG. 6 shows a ratio of the signal strength of the crystal orientation ⁇ 220> normalized by the film thickness by XRD analysis of a polysilicon film formed under the above conditions using SiH 4 and Si 2 H 6 as silicon compounds ( %) And the flow rates of SiH 4 and Si 2 H 6 .
- the film formation rate (right scale on the vertical axis) is also shown.
- the XRD analysis of FIG. 6 shows the same tendency as the Raman spectroscopic analysis, and the ratio of the crystal orientation ⁇ 220> tends to slightly decrease with increasing flow rate for both SiH 4 and Si 2 H 6. It was confirmed that the film quality was almost the same. However, the deposition rate of Si 2 H 6 was about twice as great as that of SiH 4 .
- the volume flow rate ratio of silicon compound gas (silicon compound gas / percentage of total film forming gas flow rate) is within the range of 1.25% to 2.5%, compared to SiH 4 , Si 2. It is understood that the advantages of using H 6 and Si 3 H 8 are significant. Therefore, it has been confirmed that by using a silicon compound having two or more silicon atoms in the molecule as the silicon compound, the deposition rate can be significantly improved without reducing the crystallinity of the polysilicon film. It was done.
- Treatment temperature (mounting table): set to 250 ° C, 400 ° C or 500 ° C.
- Microwave power set to 2000W, 3000W or 4000W.
- Processing pressure 4 Pa, 5.3 Pa or 10.6 Pa was set.
- Silane-based gas flow rate 5 mL / min (sccm).
- H2 gas flow rate set to 400 mL / min (sccm) in total with the silane-based gas.
- FIG. 7 shows the influence of the film forming pressure.
- the pressure is 4 Pa to 5.3 Pa, the ratio of the crystal orientation ⁇ 220> is hardly changed, but it is greatly reduced at 10.6 Pa.
- the film forming pressure is preferably 10.6 Pa or less, for example, and more preferably 5.3 Pa or less.
- FIG. 8 shows the influence of the film formation temperature (mounting table temperature).
- the ratio of crystal orientation ⁇ 220> hardly changed at 250 ° C., 400 ° C., and 500 ° C., and no significant difference was observed. It was.
- the upper limit of the film forming temperature is preferably set to about 600 ° C. Therefore, the film formation temperature is preferably 250 ° C. or more and 600 ° C. or less, and more preferably 250 ° C. to 500 ° C.
- FIG. 9 shows the influence of the microwave output, and it was confirmed that the ratio of the crystal orientation ⁇ 220> increases by increasing the microwave output from 2000 W to 4000 W.
- FIG. 9 suggests that the crystallinity can be increased as the microwave output is increased. Therefore, it is considered that the microwave output is preferably 2000 W or more and 5000 W or less, and more preferably 3000 W or more and 5000 W or less.
- FIG. 10 schematically shows a configuration of a cross-point type memory cell array 200.
- memory cells MC are arranged at intersections of a plurality (three in the figure) bit lines BL and a plurality (three in the figure) word lines WL.
- FIG. 11 is a fragmentary cross-sectional view of the memory cell array 200 of FIG. 10, showing the detailed structure of the memory cell MC.
- the memory cell MC has a circuit structure in which a diode 201 and a storage element 211 are connected in series.
- the diode 201 is a pin diode, and includes a p-type silicon layer 202, an intrinsic silicon layer 203, and an n-type silicon layer 204.
- the memory element 211 is a material (for example, a transition metal oxide such as PrCaMnO) whose resistance is changed by an electrical stress.
- a phase change memory PRAM
- a phase change is caused by a thermal stress due to current.
- a material that changes for example, GeSeTe
- a ferroelectric memory FeRAM
- a ferroelectric material for example, lead zirconate titanate, strontium / bismuth / tantalum composite oxide
- MRAM magnetic memory Is a TMR (ferromagnetic tunnel magnetoresistive effect) in which a ferromagnetic layer made of a transition metal magnetic element such as Fe, Co, Ni, CoFe, or NiFe or an alloy thereof, a nonmagnetic layer, and the ferromagnetic layer are stacked. And the like having an element structure.
- the method for manufacturing a polysilicon film according to the present invention can be applied when manufacturing the diode 201 of the cross-point type memory cell array 200.
- a polysilicon layer 202a (a portion to become the p-type silicon layer 202) is formed using a film forming gas containing a silicon compound having a thickness of 2 or more.
- plasma CVD is performed while supplying a dopant gas such as B 2 H 6 from the dopant gas supply source 19d.
- a film forming gas containing a silicon compound in which the number of silicon atoms contained in the molecule is 2 or more is used on the polysilicon layer 202a by the plasma CVD apparatus 100. Then, a polysilicon layer 203a (a portion to become the intrinsic silicon layer 203) is formed.
- a film forming gas containing a silicon compound in which the number of silicon atoms contained in the molecule is 2 or more is used on the polysilicon layer 203a by the plasma CVD apparatus 100.
- a polysilicon layer 204a (a portion to become the n-type silicon layer 204) is formed.
- plasma CVD is performed while supplying a dopant gas such as PH 3 from the dopant gas supply source 19d.
- the polysilicon layer 202a to be the p-type silicon layer 202, the polysilicon layer 203a to be the intrinsic silicon layer 203, and the polysilicon layer 204a to be the n-type silicon layer 204 can be sequentially formed. Thereafter, a memory cell MC having the stacked structure shown in FIG. 11 can be formed by forming a material film of a portion to be the memory element 211 on the polysilicon layer 204a and performing etching.
- high-quality polysilicon layers 202a, 203a and 204a having a high crystallinity can be formed at a high film formation rate.
- the polysilicon layers 202a, 203a, and 204a are formed at a low temperature of 600 ° C. or lower by using the plasma CVD apparatus 100 that generates plasma by introducing microwaves into the processing container using a planar antenna. Since the film can be formed, the dopant is not diffused during the film formation process.
- the degree of integration is usually improved by forming a memory cell array 200 as shown in FIG. 10 in a stacked structure.
- the diode 201 pin diode
- the diode 201 pin diode
- the polysilicon layers 202a, 203a, and 204a are formed by the thermal CVD method, it is difficult to reduce the thickness, and the dopant diffuses at a high temperature. From this point of view, it is extremely advantageous to apply the method of the present invention that can form the polysilicon layers 202a, 203a, and 204a in a thin film and that can be formed at a relatively low temperature and does not cause dopant diffusion. .
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Abstract
Description
被処理体を収容する上部が開口した処理容器と、
前記処理容器内に配置され、被処理体を載置する載置台と、
前記処理容器の前記開口を塞ぐ誘電体部材と、
前記誘電体部材の上部に設けられ、前記処理容器内にマイクロ波を導入するための複数
の孔を有する平面アンテナと、
前記処理容器内に成膜ガスを導入するガス導入部と、
前記処理容器内を減圧排気する排気装置と、
前記処理容器内に前記ガス導入部を介して導入した式SinH2n+2(ここで、nは2以上の数を意味する)で表される珪素化合物を含む成膜ガスを、前記平面アンテナを介して導入した前記マイクロ波により励起してプラズマを生成させ、該プラズマを用いてプラズマCVDを行い被処理体の表面に結晶性珪素膜を堆積させる結晶性珪素膜の成膜方法が行われるように制御する制御部と、を備えている。このプラズマCVD装置は、前記載置台内に埋設された電極と、前記電極に接続する高周波電源と、をさらに備え、前記制御部は、前記プラズマCVDの間、前記電極に高周波電力を印加することにより、被処理体にバイアス電圧を印加することが好ましい。
実験1:
珪素化合物としてSiH4、Si2H6及びSi3H8ガスを、プラズマ生成用ガスとしてArガスを使用し、プラズマCVD装置100において下記のプラズマCVD条件で成膜ガスの流量を変えてポリシリコン膜を成膜した。各条件で成膜されたポリシリコン膜の成膜レートを図4、結晶化度を図5に示した。なお、結晶化度は、ラマン分光分析で得られたスペクトルの結晶性シリコン(520nm)の信号強度をアモルファスシリコン(480nm)の信号強度で除した値である。
処理温度(載置台):400℃
マイクロ波パワー:3000W
処理圧力;5.3Pa
シラン系ガス流量;5、10又は20mL/min(sccm)
Arガス流量;上記シラン系ガスとの合計で800mL/min(sccm)
珪素化合物としてSi2H6、プラズマ生成用ガスとしてH2ガスを使用し、プラズマCVD装置100において下記のプラズマCVD条件でポリシリコン膜を成膜した。各条件で成膜されたポリシリコン膜をXRD分析し、結晶方位<220>の信号強度を膜厚で規格化した比率(%)を元に、膜質に対する成膜圧力、温度、及びマイクロ波出力の影響を調べた。結果を図7~9に示した。
処理温度(載置台):250℃、400℃又は500℃に設定した。
マイクロ波パワー:2000W、3000W又は4000Wに設定した。
処理圧力;4Pa、5.3Pa又は10.6Paに設定した。
シラン系ガス流量;5mL/min(sccm)に設定した。
H2ガス流量;上記シラン系ガスとの合計で400mL/min(sccm)に設定した。
次に、図10~図15を参照しながら、本実施の形態に係る結晶性珪素膜の製造方法を不揮発性メモリ装置の製造過程に適用した例について説明する。図10は、クロスポイント型のメモリセルアレイ200の構成を模式的に示している。メモリセルアレイ200は複数本(図示では3本)のビット線BLと複数本(図示では3本)のワード線WLの交点にメモリセルMCが配置されている。
Claims (11)
- 複数の孔を有する平面アンテナにより処理容器内にマイクロ波を導入してプラズマを生成するプラズマCVD装置を用い、式SinH2n+2(ここで、nは2以上の数を意味する)で表される珪素化合物を含む成膜ガスを前記マイクロ波により励起してプラズマを生成させ、該プラズマを用いてプラズマCVDを行うことにより被処理体の表面に結晶性珪素膜を堆積させる結晶性珪素膜の成膜方法。
- 前記珪素化合物がジシランまたはトリシランである請求項1に記載の結晶性珪素膜の成膜方法。
- 前記成膜ガスが、希ガスを含む請求項1に記載の結晶性珪素膜の成膜方法。
- 前記成膜ガスが、水素ガスを含む請求項1に記載の結晶性珪素膜の成膜方法。
- 前記成膜ガスの全流量に対する前記珪素化合物の体積流量比率が0.5%~10%の範囲内である請求項1に記載の結晶性珪素膜の成膜方法。
- 前記処理容器内の圧力を0.1Pa以上10.6Pa以下の範囲内に設定して前記プラズマCVDを行う請求項1に記載の結晶性珪素膜の成膜方法。
- 処理温度を250℃以上600℃以下で行う請求項1に記載の結晶性珪素膜の成膜方法。
- 前記マイクロ波のパワー密度が、被処理体の面積あたり0.25W/cm2以上2.56W/cm2以下の範囲内である請求項1に記載の結晶性珪素膜の成膜方法。
- 前記プラズマCVDの間、被処理体を載置する載置台に埋設された電極に高周波電力を印加することにより、被処理体にバイアス電圧を印加する請求項1に記載の結晶性珪素膜の成膜方法。
- プラズマCVD法により被処理体上に結晶性珪素膜を形成するプラズマCVD装置であって、
被処理体を収容する上部が開口した処理容器と、
前記処理容器内に配置され、被処理体を載置する載置台と、
前記処理容器の前記開口を塞ぐ誘電体部材と、
前記誘電体部材の上部に設けられ、前記処理容器内にマイクロ波を導入するための複数
の孔を有する平面アンテナと、
前記処理容器内に成膜ガスを導入するガス導入部と、
前記処理容器内を減圧排気する排気装置と、
前記処理容器内に前記ガス導入部を介して導入した式SinH2n+2(ここで、nは2以上の数を意味する)で表される珪素化合物を含む成膜ガスを、前記平面アンテナを介して導入した前記マイクロ波により励起してプラズマを生成させ、該プラズマを用いてプラズマCVDを行い被処理体の表面に結晶性珪素膜を堆積させる結晶性珪素膜の成膜方法が行われるように制御する制御部と、
を備えたことを特徴とするプラズマCVD装置。 - 前記載置台内に埋設された電極と、
前記電極に接続する高周波電源と、
をさらに備え、
前記制御部は、前記プラズマCVDの間、前記電極に高周波電力を印加することにより、被処理体にバイアス電圧を印加する請求項10に記載のプラズマCVD装置。
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CN2010800438745A CN102549717A (zh) | 2009-09-30 | 2010-09-28 | 结晶性硅膜的成膜方法和等离子体cvd装置 |
US13/499,150 US20120315745A1 (en) | 2009-09-30 | 2010-09-28 | Crystalline silicon film forming method and plasma cvd apparatus |
KR1020127008193A KR20120059593A (ko) | 2009-09-30 | 2010-09-28 | 결정성 규소막의 성막 방법 및 플라즈마 cvd 장치 |
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JP2013229372A (ja) * | 2012-04-24 | 2013-11-07 | Tokyo Electron Ltd | プラズマ処理方法及びプラズマ処理装置 |
JP6008611B2 (ja) | 2012-06-27 | 2016-10-19 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP2014013837A (ja) * | 2012-07-04 | 2014-01-23 | Tokyo Electron Ltd | シリコン酸化膜の形成方法およびその形成装置 |
CN103602957A (zh) * | 2013-11-07 | 2014-02-26 | 中山市创科科研技术服务有限公司 | 一种用于制备α_SiH膜的设备 |
KR20150087702A (ko) * | 2014-01-22 | 2015-07-30 | 삼성전자주식회사 | 플라즈마 발생 장치 |
JP6742165B2 (ja) * | 2016-06-14 | 2020-08-19 | 東京エレクトロン株式会社 | 窒化珪素膜の処理方法および窒化珪素膜の形成方法 |
JP7022651B2 (ja) * | 2018-05-28 | 2022-02-18 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
US20200312629A1 (en) * | 2019-03-25 | 2020-10-01 | Recarbon, Inc. | Controlling exhaust gas pressure of a plasma reactor for plasma stability |
US10832893B2 (en) * | 2019-03-25 | 2020-11-10 | Recarbon, Inc. | Plasma reactor for processing gas |
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JPH0817738A (ja) * | 1994-06-24 | 1996-01-19 | Mitsui Toatsu Chem Inc | 結晶性半導体薄膜形成方法 |
JP2008277306A (ja) * | 1997-01-29 | 2008-11-13 | Foundation For Advancement Of International Science | プラズマ装置 |
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US6337229B1 (en) * | 1994-12-16 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of making crystal silicon semiconductor and thin film transistor |
US7816236B2 (en) * | 2005-02-04 | 2010-10-19 | Asm America Inc. | Selective deposition of silicon-containing films |
US7361574B1 (en) * | 2006-11-17 | 2008-04-22 | Sharp Laboratories Of America, Inc | Single-crystal silicon-on-glass from film transfer |
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JP2008277306A (ja) * | 1997-01-29 | 2008-11-13 | Foundation For Advancement Of International Science | プラズマ装置 |
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TW201131006A (en) | 2011-09-16 |
KR20120059593A (ko) | 2012-06-08 |
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