WO2010139567A3 - Hochstromfähige kontaktierung eines optoelektronischen halbleiterkörpers oder -chips - Google Patents

Hochstromfähige kontaktierung eines optoelektronischen halbleiterkörpers oder -chips Download PDF

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Publication number
WO2010139567A3
WO2010139567A3 PCT/EP2010/057073 EP2010057073W WO2010139567A3 WO 2010139567 A3 WO2010139567 A3 WO 2010139567A3 EP 2010057073 W EP2010057073 W EP 2010057073W WO 2010139567 A3 WO2010139567 A3 WO 2010139567A3
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic semiconductor
semiconductor body
high current
semiconductor chip
layer
Prior art date
Application number
PCT/EP2010/057073
Other languages
English (en)
French (fr)
Other versions
WO2010139567A2 (de
Inventor
Markus Maute
Karl Engl
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to JP2012513539A priority Critical patent/JP5739878B2/ja
Priority to CN201080024801.1A priority patent/CN102460742B/zh
Priority to US13/376,006 priority patent/US8823037B2/en
Priority to EP10723082.3A priority patent/EP2438627B1/de
Publication of WO2010139567A2 publication Critical patent/WO2010139567A2/de
Publication of WO2010139567A3 publication Critical patent/WO2010139567A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

Die vorliegende Anmeldung betrifft einen optoelektronischen Halbleiterkörper (1) mit einer Vorderseite (120), die zur Emission und/oder zum Empfang von elektromagnetischer Strahlung vorgesehen ist, einer der Vorderseite (120) gegenüberliegenden Rückseite (110), die zum Aufbringen auf eine Trägerplatte (7) vorgesehen ist, und einer aktiven Halbleiterschichtenfolge (2) die in Richtung von der Rückseite (110) zur Vorderseite (120) eine Schicht eines ersten Leitfähigkeitstyps (21), eine aktive Schicht (22) und eine Schicht eines zweiten Leitfähigkeitstyps (23) in dieser Reihenfolge aufweist. Weiter betrifft die vorliegende Anmeldung einen Halbleiterchip mit einem solchen Halbleiterkörper (1).
PCT/EP2010/057073 2009-06-04 2010-05-21 Optoelektronischer halbleiterkörper und optoelektronischer halbleiterchip WO2010139567A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012513539A JP5739878B2 (ja) 2009-06-04 2010-05-21 オプトエレクトロニック半導体チップ
CN201080024801.1A CN102460742B (zh) 2009-06-04 2010-05-21 光电子半导体本体或光电子半导体芯片的能用于高电流的接触
US13/376,006 US8823037B2 (en) 2009-06-04 2010-05-21 Optoelectronic semiconductor body and optoelectronic semiconductor chip
EP10723082.3A EP2438627B1 (de) 2009-06-04 2010-05-21 Optoelektronischer halbleiterchip

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009023849.2A DE102009023849B4 (de) 2009-06-04 2009-06-04 Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip
DE102009023849.2 2009-06-04

Publications (2)

Publication Number Publication Date
WO2010139567A2 WO2010139567A2 (de) 2010-12-09
WO2010139567A3 true WO2010139567A3 (de) 2011-02-24

Family

ID=42633107

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/057073 WO2010139567A2 (de) 2009-06-04 2010-05-21 Optoelektronischer halbleiterkörper und optoelektronischer halbleiterchip

Country Status (8)

Country Link
US (1) US8823037B2 (de)
EP (1) EP2438627B1 (de)
JP (1) JP5739878B2 (de)
KR (1) KR101633151B1 (de)
CN (1) CN102460742B (de)
DE (1) DE102009023849B4 (de)
TW (1) TWI431809B (de)
WO (1) WO2010139567A2 (de)

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Publication number Priority date Publication date Assignee Title
DE102009023849B4 (de) 2009-06-04 2022-10-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip
KR20120006410A (ko) 2010-07-12 2012-01-18 엘지이노텍 주식회사 발광 소자 및 그 제조방법
CN104064632B (zh) * 2013-03-22 2016-08-24 上海蓝光科技有限公司 一种发光二极管绝缘层的制备方法
KR102222861B1 (ko) * 2013-07-18 2021-03-04 루미리즈 홀딩 비.브이. 고반사성 플립칩 led 다이
DE102013111918B4 (de) 2013-10-29 2020-01-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102014101896A1 (de) * 2014-02-14 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils sowie optoelektronisches Halbleiterbauteil
JP2015188939A (ja) * 2014-03-31 2015-11-02 アイシン精機株式会社 レーザ接合方法、レーザ接合品及びレーザ接合装置
DE102014112562A1 (de) * 2014-09-01 2016-03-03 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102014117510A1 (de) 2014-11-28 2016-06-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US9455300B1 (en) * 2015-03-02 2016-09-27 Rayvio Corporation Pixel array of ultraviolet light emitting devices
DE102015108532A1 (de) * 2015-05-29 2016-12-01 Osram Opto Semiconductors Gmbh Anzeigevorrichtung mit einer Mehrzahl getrennt voneinander betreibbarer Bildpunkte
DE102016124847B4 (de) * 2016-12-19 2023-06-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102016124860A1 (de) * 2016-12-19 2018-06-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102017117164A1 (de) 2017-07-28 2019-01-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, Hochvolthalbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102017117645A1 (de) 2017-08-03 2019-02-07 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102017119881A1 (de) * 2017-08-30 2019-02-28 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
JP7096489B2 (ja) 2018-09-20 2022-07-06 日亜化学工業株式会社 半導体素子の製造方法

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DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102009023849B4 (de) 2009-06-04 2022-10-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6084175A (en) * 1993-05-20 2000-07-04 Amoco/Enron Solar Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
US20050056855A1 (en) * 2003-09-16 2005-03-17 Ming-Der Lin Light-emitting device with enlarged active light-emitting region
US20050133807A1 (en) * 2003-12-18 2005-06-23 Park Young H. Nitride semiconductor light emitting device
US20080145961A1 (en) * 2004-06-18 2008-06-19 Naochika Horio Semiconductor Light Emitting Device and Manufacturing Method Thereof
US20070096130A1 (en) * 2005-06-09 2007-05-03 Philips Lumileds Lighting Company, Llc LED Assembly Having Maximum Metal Support for Laser Lift-Off of Growth Substrate
WO2007023419A1 (en) * 2005-08-24 2007-03-01 Koninklijke Philips Electronics N.V. Iii-nitride light-emitting device with double heterostructure light-emitting region
US20070176188A1 (en) * 2005-12-01 2007-08-02 Shinichi Tanaka Semiconductor light emitting device and its manufacture method
WO2008047325A2 (en) * 2006-10-18 2008-04-24 Koninklijke Philips Electronics N.V. Electrical contacts for a semiconductor light emitting apparatus
WO2008069482A1 (en) * 2006-12-07 2008-06-12 Electronics And Telecommunications Research Institute Manufacturing method of light emitting diode including current spreading layer

Also Published As

Publication number Publication date
CN102460742B (zh) 2014-08-27
DE102009023849B4 (de) 2022-10-20
EP2438627B1 (de) 2020-03-04
KR101633151B1 (ko) 2016-07-01
TWI431809B (zh) 2014-03-21
US8823037B2 (en) 2014-09-02
US20120168809A1 (en) 2012-07-05
KR20120030521A (ko) 2012-03-28
CN102460742A (zh) 2012-05-16
JP5739878B2 (ja) 2015-06-24
EP2438627A2 (de) 2012-04-11
WO2010139567A2 (de) 2010-12-09
JP2012529167A (ja) 2012-11-15
DE102009023849A1 (de) 2010-12-09
TW201108461A (en) 2011-03-01

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