WO2010137257A1 - 荷電粒子線応用装置及び試料観察方法 - Google Patents
荷電粒子線応用装置及び試料観察方法 Download PDFInfo
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- WO2010137257A1 WO2010137257A1 PCT/JP2010/003342 JP2010003342W WO2010137257A1 WO 2010137257 A1 WO2010137257 A1 WO 2010137257A1 JP 2010003342 W JP2010003342 W JP 2010003342W WO 2010137257 A1 WO2010137257 A1 WO 2010137257A1
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- charged particle
- particle beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Definitions
- the present invention relates to a charged particle beam application apparatus, and more particularly to a highly sensitive and highly efficient inspection and measurement technique using a charged particle beam.
- a charged particle beam such as an electron beam or an ion beam is irradiated on a sample, and secondary charged particles such as secondary electrons generated (hereinafter referred to as a secondary beam).
- An electron beam length measuring device that acquires a beam signal and measures the shape and dimensions of a pattern formed on a sample, an electron beam inspection device that checks for the presence of defects, and the like are used.
- a so-called scanning electron microscope (SEM) type device that scans a sample with a primary beam focused in a spot shape has been used.
- the SEM type has a feature that it takes a long time to acquire an image in order to obtain an image by performing scanning of the primary beam two-dimensionally, and there is a problem of improving the processing speed of the sample, that is, the inspection speed.
- a multi-beam type charged particle beam application apparatus having a plurality of beams has been proposed (see Patent Documents 1, 2, and 3).
- Patent Document 1 a plurality of beams formed by dividing an electron beam emitted from a single electron gun into a plurality of beams and converging them individually by lenses arranged in an array form a single optical
- a multi-beam type electron beam inspection apparatus that irradiates and scans a sample using an element is disclosed.
- Multi-beam type charged particle beam application equipment can obtain information on the sample several times faster than SEM by using multiple beams, and the inspection speed improves as the number of multi-beams increases. it can.
- the multi-beam type device compared to the conventional SEM type device using a single beam (hereinafter referred to as single beam type), the irradiation amount of the sample, the amount of incident energy, the size of the field of view, etc. It is difficult to freely change the conditions, and depending on the sample, a single beam type device may be more effective than a multi-beam type device.
- the area to be inspected is limited to only the memory portion in the wafer, and it is possible to take advantage of the multi-beam type of irradiating a plurality of locations at once and acquiring an image of a wide area. Can not.
- the irradiation conditions should be such that the amount of current to be applied is increased and the deflection width is reduced.
- the single beam type can be changed flexibly compared to the multi-beam type. Is more effective. Thus, an efficient inspection cannot always be performed only with a multi-beam type apparatus.
- Patent Document 2 proposes a multi-beam type apparatus that can select a plurality of primary beams for defect inspection and a high-resolution single beam for defect review.
- Patent Document 3 proposes a multi-beam type apparatus that has a beam selection aperture that allows only a desired beam to pass downstream and selectively passes one beam.
- the configuration is such that only one of the formed multi-beams is shielded, it is difficult to flexibly change conditions such as the amount of current to irradiate the sample and the size of the field of view. Can't take advantage of
- the present invention pays attention to the fact that there are cases where a single beam type device is more effective than the above-mentioned multi beam type, and charged particle beam applications that can make use of the features of both the multi beam type and the single beam type. It is an object of the present invention to provide an apparatus and a highly accurate and highly efficient observation method.
- a charged particle beam application apparatus for observing a sample includes a primary optical system for irradiating a sample with a plurality of charged particle beams, and a secondary generated from the sample.
- a first detector for detecting a charged particle beam an observation condition setting unit for setting an observation condition, a switching condition setting unit for setting a switching condition for the number of charged particle beams, and the switching condition And a switching control unit for switching the number of charged particle beams and a storage unit for storing observation conditions and switching conditions.
- this charged particle beam application apparatus secondary charged particles generated from the sample separately from the beam detector for separating the emission direction of the charged particle beam according to the incident direction of the charged particle beam and the first detector And a second detector for detecting a line.
- a charged particle beam application apparatus for observing a sample includes a primary optical system for irradiating a plurality of charged particle beams on the sample, and two generated from the sample.
- the control unit includes an observation condition setting unit for setting an observation condition, a switching condition setting unit for setting a switching condition for switching the number of the plurality of charged particle beams, and a number of the plurality of charged particle beams based on the switching condition.
- a switching control unit for switching is used.
- the present invention provides an apparatus having switching means that can be used as a single beam type charged particle beam application apparatus in a multi beam type charged particle beam application apparatus.
- a single beam detector is provided separately from the multi-beam secondary electron detector, and the conditions can be changed flexibly by switching the electron optical conditions.
- FIG. 3 is a diagram for explaining a schematic configuration in a multi-beam mode of the electron beam inspection apparatus according to the first embodiment. It is a figure explaining schematic structure in the single beam mode of the electron beam inspection apparatus which concerns on a 1st Example.
- FIG. 3 is an enlarged view showing an example of an electron source image formed in FIG.
- FIG. 3 is an enlarged view showing another example of the electron source image formed in FIG.
- FIG. 3 is an enlarged view showing another example of the electron source image formed in FIG.
- FIG. 5 is a diagram showing a flowchart for carrying out an inspection according to the first embodiment.
- FIG. 6 is a diagram showing an example of an inspection condition setting screen according to the first embodiment.
- FIG. 10 is a diagram showing a flowchart of inspection execution according to a third embodiment.
- FIG. 7B is a diagram showing details of a multi / single beam mode automatic determination step in FIG. 7A.
- FIG. 10 is a diagram illustrating an example of an inspection condition setting screen according to a third embodiment. It is a figure which shows an example of the inspection condition setting screen which concerns on a 4th Example.
- FIG. 6 is a diagram showing an example of an inspection condition setting screen according to the first embodiment.
- FIG. 1 is a diagram showing a schematic configuration of the electron beam inspection apparatus according to the first embodiment.
- An electron gun 101 includes an electron source 102 made of a material having a low work function, an anode 105 having a high potential with respect to the electron source 102, and an electromagnetic lens 104 that superimposes a magnetic field on an acceleration electric field formed between the electron source and the anode.
- an electron gun 101 includes an electron source 102 made of a material having a low work function, an anode 105 having a high potential with respect to the electron source 102, and an electromagnetic lens 104 that superimposes a magnetic field on an acceleration electric field formed between the electron source and the anode.
- a Schottky cathode that can easily obtain a large current and has stable electron emission is used.
- a lens 107 In the downstream direction from which the primary electron beam 103 is extracted from the electron gun 101, a lens 107, a beam selective aperture 141, an aperture array 108 in which a plurality of openings are arranged on the same substrate, a lens array 109 having a plurality of openings, and a beam separator 111 ,
- An objective lens 112, a scanning deflection deflector 113, a stage 117, multibeam secondary beam detectors 121a, 121b, 121c, a single beam secondary beam detector 140, and the like are arranged. Further, a current limiting diaphragm, a primary beam center axis (optical axis) adjustment aligner, an aberration corrector, and the like are added to the electron optical system (not shown).
- the stage 117 moves with the wafer 115 placed thereon.
- a negative potential (hereinafter referred to as a retarding potential) is applied to the wafer 115.
- a wafer holder is interposed between the wafer 115 and the stage 117 in a conductive state with the wafer, and a retarding power supply 118a is connected to the wafer holder to apply a desired voltage to the wafer holder and the wafer 115. It is configured to do.
- the charging control electrode 114 is installed on the electron gun direction side from the wafer 115.
- a scanning signal generator 137 is connected to the scanning deflection deflector 113, and a charging control power source 118b is connected to the charging control electrode 114.
- An optical system control circuit 139 is connected to each part of the electron gun 101, the lens 107, the lens array 109, the beam separator 111, the objective lens 112, the retarding power supply 118a, and the charging control power supply 118b. Is connected to the system control unit 135.
- a stage controller 138 is connected to the stage 117, and the secondary beam detectors 121a, 121b, and 121c for multi-beams, the secondary beam detector 140 for single beams, and the deflector 113 for scanning deflection are similarly system control units. Connected to 135. As will be described later, the optical system control circuit 139 functions as a switching control unit that switches between a multi-beam and a single beam based on the set switching condition under the control of the system control unit 135.
- the system control unit 135 includes a storage device 132, a calculation unit 133, and a defect determination unit 134, and is connected to an input / output unit 136 including an image display device.
- a wafer transfer system for placing the wafer on the stage from outside the vacuum is provided.
- the apparatus includes a charge control mechanism 116 for controlling the sample to a desired charge potential, and the charge control mechanism 116 is connected to the system control unit 135.
- the system control unit 135 is configured to include a central processing unit (Central Processing Unit: CPU) that is the calculation unit 133 and a storage unit that is the storage device 132, and this CPU is used as the calculation unit described above.
- CPU Central Processing Unit
- the input / output unit 136 may be configured such that an input unit such as a keyboard and a mouse and a display unit such as a liquid crystal display device are separately configured as an input unit and an output unit, or an integrated type using a touch panel or the like. It may be composed of input / output means.
- This device can be realized as both a multi-beam type and a single beam type device by setting switching conditions. Therefore, in this specification, the condition for using as a multi-beam type apparatus according to the set switching condition is called a multi-beam mode, and the condition for using as a single beam type apparatus is called a single beam mode.
- the primary beam 103 emitted from the electron source 102 is accelerated in the direction of the anode 105 while receiving the focusing action by the electromagnetic lens 104, and forms a first electron source image 106 (a point at which the beam diameter is minimized).
- the electron gun 101 is provided with a diaphragm so that an electron beam in a desired current range passes through the diaphragm. If the operating conditions of the anode 105 and the electromagnetic lens 104 are changed, the current amount of the primary beam passing through the aperture can be adjusted to a desired current amount.
- an aligner for correcting the optical axis of the primary electron beam is disposed between the electron gun 101 and the lens 107, and correction can be made when the center axis of the electron beam is deviated from the diaphragm or the electron optical system. It has a configuration. Using the first electron source image 106 as a light source, the lens 107 arranges the primary beam substantially in parallel.
- the lens 107 is an electromagnetic lens, and is electrically controlled by an optical system control circuit 139 that receives a command from the system control unit 135.
- the primary beam 103 is incident on the aperture array 108.
- a beam selection aperture 141 is disposed upstream of the aperture array 108.
- the beam selection diaphragm 141 selects and passes the beam to be used among the multi-beams to be formed by selectively controlling the aperture position and size by the optical system control circuit 139, and blocks the remaining beams.
- one beam selection stop 141 is arranged immediately above the aperture array 108, but one or more beam selection stops 141 may be arranged further upstream or downstream.
- An optical system control circuit 139 that receives a command from the system control unit 135 and selectively controls a plurality of beams functions as a switching control unit that switches the number of beams to be irradiated according to switching conditions.
- the aperture position of the beam selection aperture 141 is selected according to three of the five apertures of the aperture array 108.
- the primary beam 103 is divided into three beams by the aperture array, and is individually focused by the lens array 109 to form a multi-beam.
- the lens array 109 is composed of three electrodes each having a plurality of apertures, and acts as an Einzel lens for the primary beam passing through the apertures by applying a voltage to the central electrode among them. .
- the number of multi-beams is three, and a plurality of second electron source images 110a, 110b, and 110c are formed by being individually focused by the lens array 109.
- the primary beam 103 individually focused by the lens array 109 passes through the beam separator 111.
- the beam separator 111 is used for the purpose of separating the primary beam 103 and the secondary beam 120, and in this embodiment, generates a magnetic field and an electric field orthogonal to each other in a plane substantially perpendicular to the incident direction of the primary beam.
- the Wien filter is used to give the deflection angle corresponding to the energy of the passing electrons.
- the strength of the magnetic field and the electric field is set so that the primary beam goes straight, and the strength of the electromagnetic field is deflected to a desired angle with respect to the secondary electron beam incident from the opposite direction. Adjust and control.
- the secondary electron beams are separated and arrived at a plurality of detectors corresponding to the multi-beams without being mixed.
- the trajectory through which the secondary electron beam passes does not physically interfere with the electron optical system upstream of the beam separator 111 such as the lens array 109, so that the deflection angle of the beam separator 111 is set large. This increases the influence of aberration on the primary beam.
- the position of the beam separator 111 is arranged according to the height of the second electron source images 110a, 110b, 110c of the primary beam.
- the objective lens 112 is an electromagnetic lens, and projects the second electron source images 110a, 110b, and 110c on the surface of the wafer 115 as a sample in a reduced scale.
- the deflector 113 for scanning deflection is installed in the objective lens 112.
- the scanning signal generator 137 When a signal is input to the deflector 113 by the scanning signal generator 137, the three primary beams passing therethrough are deflected in substantially the same direction and at substantially the same angle, and the surface of the wafer 115 that is the sample is applied. Raster scan.
- a retarding potential is applied to the wafer 115 by a retarding power source 118a, and an electric field for decelerating the primary beam is formed.
- the retarding power supply 118a and the charging control power supply 118b are controlled by the optical system control circuit 139 in the same manner as other optical elements, that is, the electron gun 101, the lens 107, the lens array 109, the beam separator 111, and the objective lens 112.
- the unit 135 is controlled uniformly.
- Stage 117 is controlled by stage controller 138.
- the system controller 135 controls the scanning signal generator 137 and the stage controller 138 in a unified manner so that a predetermined area on the surface of the wafer 115 is inspected for each stripe aligned in the stage traveling direction, and calibration is performed in advance.
- the stage is continuously moved at the time of executing the inspection, and the primary beam is controlled so as to sequentially scan the band-like region by a combination of deflection by scanning and stage movement.
- This band-like area is obtained by dividing a predetermined inspection area corresponding to a multi-beam, and the entire predetermined inspection area is scanned by the multi-beam scanning each of the plurality of band-like areas. Note that the above-mentioned one stripe corresponds to a range through which a plurality of band-shaped regions corresponding to multi-beams have passed.
- the three primary beams that have reached the surface of the wafer 115 interact with substances near the surface.
- secondary electrons such as reflected electrons, secondary electrons, Auger electrons, and the like are generated from the sample and become the secondary beam 120.
- the charge control electrode 114 is an electrode for adjusting the electric field intensity near the surface of the wafer 115 and controlling the trajectory of the secondary beam 120. It is installed facing the wafer 115, and a positive potential, a negative potential or the same potential is applied to the wafer 115 by the charge control power supply 118b.
- the voltage applied to the charge control electrode 114 by the charge control power supply 118b is adjusted to a value suitable for the type of the wafer 115 and the observation / inspection object. For example, when it is desired to positively return the generated secondary beam 120 to the surface of the wafer 115, a negative voltage is applied to the charging control power supply 118b. Conversely, a positive voltage can be applied to the charging control power supply 118b so that the secondary beam 120 does not return to the surface of the wafer 115.
- the secondary beam 120 After passing through the charging control electrode 114, the secondary beam 120 is subjected to the focusing action of the objective lens 112, and further separated from the primary beam trajectory by the beam separator 111 having a deflection action for the secondary beam.
- the secondary electron beam 120 is separated from each other by a plurality of multi-beam secondary beam detectors 121a, 121b, and 121c corresponding to each beam. Reach in state.
- the detected signals are amplified by the amplification circuits 130a, 130b, and 130c, digitized by the A / D converter 131, and temporarily stored as image data in the storage device 132 in the system control unit 135.
- the calculation unit 133 calculates various statistics of the image, and finally determines the presence / absence of a defect based on the defect determination condition previously determined by the defect determination unit 134. These can be realized by the above-described CPU program processing.
- the determination result is displayed on the image display device of the input / output unit 136. With the above procedure, the area to be inspected in the wafer 115 can be inspected in order from the end.
- FIG. 2 is a schematic diagram when the wafer pattern inspection is performed in the single beam mode by the apparatus configuration of FIG.
- the process until the primary beam 203 is emitted from the electron source 102 and the first electron source image 206 is formed is the same as in the multi-beam mode.
- the primary beam 203 passes through the beam selective aperture 141 while receiving a focusing action by the lens 107 electrically controlled by the optical system control circuit 139 using the first electron source image 206 as a light source.
- the beam selection diaphragm 141 is adjusted to an aperture for selecting one beam so that the primary beam 203 becomes a single beam.
- the primary beam 203 forms a second electron source image 201, and a third electron source image 202 is formed by the lens array 109.
- the amount of current passing downstream can be increased in the single beam mode as compared to the multi-beam mode.
- the amount of current passing downstream can be changed by the aperture diameter of the beam selective aperture 141.
- the optical system control circuit 139 that receives a command from the system control unit 135 and controls to select one beam functions as a switching control unit that switches the number of beams to be irradiated according to switching conditions.
- FIGS. 3A, 3B, and 3C are enlarged views from the first electron source image 206 to the third electron source image 202 in FIG. 2, and the amount of current increased with reference to FIG. 3A is shown in FIGS. 3B and 3C.
- FIG. 3B shows an example in which a beam selection diaphragm 141 having a larger aperture diameter than that in FIG. 3A is selected, and the amount of current that can pass downstream is increased. All conditions other than the aperture diameter of the beam selective aperture 141 are the same. It is possible to select an appropriate amount of current according to the aperture diameter of the beam selection diaphragm.
- 3C is an example in which the amount of current that can pass downstream from the beam selection aperture 141 is increased by increasing the strength of the lens 107 and bringing the position of the second electron source image 201 closer to the lens 107 side.
- the configuration including the aperture diameter of the beam selective diaphragm is all the same as in FIG. 3A, and only the intensity of the lens 107 controlled by the optical system control circuit 139 is different.
- the magnification of the entire electron optical system changes as the position of the second electron source image 201 changes, but the amount of current can be freely changed.
- the current amount of the single beam can be freely selected by appropriately selecting the combination of FIGS. 3B and 3C.
- the change in the current amount in the single beam mode of the present embodiment is performed by changing the intensity of the beam selection aperture 141 and the lens 107 by the optical system control circuit 139.
- the primary beam 203 passes through the beam separator 111 and enters the objective lens 112, and the third electron source image 202 is reduced and projected onto the surface of the wafer 115 as a sample. Is done.
- the position of the beam separator 111 is adjusted to the height of the third electron source image 202 as in the case of the multi-beam mode.
- the single beam mode unlike the multi-beam mode, all the secondary electron beams need only be acquired by a single detector. Therefore, in the single-beam mode, the position closer to the sample than the multi-beam detector is obtained. Can be placed.
- the single beam secondary beam detector 140 is separately provided at an azimuth angle different from that of the multi-beam secondary beam detectors 121a, 121b, and 121c, and is disposed closer to the sample.
- the secondary electron beam is acquired in a state where the deflection angle of the separator 111 is small.
- the deflection direction in the azimuth direction of the beam separator 111 in the single beam mode is preferably set to be a desired direction by switching to the multi-beam mode.
- an image can be acquired with higher resolution than in the multi-beam mode.
- the single beam mode can have a higher current per beam than the multi-beam mode, and the inspection is performed faster. It becomes possible to do.
- FIGS. 1 and 2 are conceptual diagrams, and in order to avoid position interference with other objects in the drawings, a secondary beam detector 140 for a single beam and a secondary beam detector 121a, b for a multi-beam,
- the deflection angle of c and the distance from the sample are described as substantially the same for convenience of drawing.
- the single beam secondary beam detector 140 is actually much shorter.
- the deflection angle is 3 degrees for the single beam secondary beam detector 140
- the multibeam secondary beam detectors 121a, 121b, and 121c are 30 degrees.
- the single beam secondary beam detector 140 is several mm to several tens mm from the center of the column, whereas the multi-beam secondary beam detectors 121a, 121b, and 121c are several hundred mm.
- the above numerical values are examples, and the apparatus can be realized when the deflection angle for the multi-beam is in the range of 30 to 90 degrees and the deflection angle for the single beam mode is in the range of 1 to 15 degrees.
- the detector 140 in the single beam mode is provided separately from the detector for the multi-beam mode so that an image can be acquired with high resolution.
- a detector may not be provided. Any one of the secondary beam detectors 121a, 121b, and 121c for multi-beams may be selected. Alternatively, signals detected by a plurality of detectors may be added together in the system control unit 135. In this case, the deflection angle of the beam separator 111 in the single beam mode is the same as in the multi-beam mode.
- the primary beam 203 is deflected by the deflector 113 and raster-scans the wafer 115 as a sample while receiving a deceleration action by the retarding potential.
- the system controller 135 unifies the scanning signal generator 137 and the stage controller 138 so that a predetermined area on the wafer 115 is inspected for each stripe arranged in the direction of stage movement by the program processing of the CPU, which is the processor. And control is performed in advance.
- the stage continuously moves, and the primary beam is controlled to sequentially scan the strip-shaped inspection region by a combination of deflection by scanning and stage movement.
- this band-shaped area corresponds to a predetermined inspection area, and the entire predetermined inspection area is scanned by scanning this band-shaped area. In the case of the single beam mode, this corresponds to a range in which the above-described one stripe passes through the band-like region.
- Secondary electrons generated by the interaction of the primary beam 203 with the substance near the sample surface become the secondary beam 220 and pass through the charge control electrode 114.
- the secondary beam is separated from the trajectory of the primary beam by the beam separator 111 which receives the focusing action of the objective lens 112 and deflects the secondary beam, and reaches the secondary beam detector 140 for single beam.
- the single beam secondary beam detector 140 is disposed closer to the sample than the multi-beam secondary beam detectors 121a, 121b, and 121c.
- the deflection angle is small.
- the detected signal is amplified by the amplifier circuit 142 and transmitted to the A / D converter 131.
- the presence / absence of a defect and the display of the determination result are the same as in the multi-beam mode. With the above procedure, the area to be inspected in the wafer 115 can be inspected in order from the end.
- FIG. FIG. 4 is a flowchart from when a wafer to be inspected is loaded into this apparatus to when inspection is completed.
- the operator determines the optimum conditions based on this procedure when creating a recipe.
- the recipe means data such as information about the electro-optical conditions, the wafer to be inspected, and the inspection result, which are necessary when performing the inspection, and is stored in the storage device 132.
- the operator starts an inspection through the input / output unit 136 provided with the image display device, and loads a wafer to be inspected according to an instruction of the image display device (step 401 in FIG. 4).
- an inspection condition setting screen constituting the inspection condition setting unit shown in FIG. 5 appears on the image display device.
- FIG. 5 shows the case where the irradiation condition input tab 502 is selected from the plurality of tabs 501 to 509 on the inspection condition setting screen.
- the precharge tab 501 is selected, and conditions for setting the wafer to a desired charging potential are input from the input / output unit 136 (step 402 in FIG. 4).
- the set precharge condition is stored in the storage device 132 so as to be transmitted to the charge control mechanism 116 through the system control unit 135 when the precharge is executed.
- the operator selects the irradiation condition input tab 502 and sets inspection conditions (step 403 in FIG. 4). Subsequently, either the multi-beam mode inspection or the single-beam mode inspection is selected from the multi / single beam mode selection box 514 constituting the switching condition setting unit according to the conditions of the wafer to be inspected.
- the inspection condition input screen 510 becomes active, and the irradiation energy, beam current, charging control electrode voltage, sampling clock (signal acquisition speed per pixel), pixel size, field size, and addition Inspection conditions such as the number of times can be selected.
- each item uses the input / output unit 136 to display a settable range in response to the selection result of the multi / single beam mode, and an appropriate value is selected by clicking the arrow on the right side.
- OK button 511 When all items have been set and the OK button 511 has been pressed, a confirmation screen 512 appears, and setting of inspection conditions is completed by selecting OK (step 404 in FIG. 4).
- the set inspection conditions are stored in the storage device 132 of the system control unit 135, and a control signal is transmitted from the system control unit 135 to the optical system control circuit 139 and the like based on the stored inspection conditions at the time of executing the inspection.
- the operator selects the focus correction tab 503 and sets the focus correction amount (step 405 in FIG. 4).
- This is a setting to correct the focal position by controlling the lens and aligner when the focal position fluctuates due to stage height fluctuations or changes in the amount of charge due to electron beam irradiation during inspection. is there.
- a correction amount for the focus variation is measured, and when a variation occurs during the inspection, the focus is adjusted based on the correction amount.
- the set various parameters are similarly stored in the storage device 132, and the stored various parameters are transmitted from the system control unit 135 to the optical system control circuit 139 or the like as control signals from the system control unit 135.
- the layout input tab 504 is selected, and a layout is set according to the pattern arrangement of the wafer to be inspected (step 406 in FIG. 4).
- the layout is used for coordinate management of inspection chips in the wafer (set by wafer display) and coordinate management of cell arrangement in the chip (set by die display).
- the set layout is reflected in the layout display 513 and similarly stored in the storage device 132.
- Alignment refers to a process for correcting a minute misalignment that occurs when a wafer is mounted on a wafer holder.
- the alignment image registered in the recipe creation is stored in the storage device 132, and the device, that is, the CPU in the system control unit 135, programs the amount of positional deviation between the stored alignment image and the image acquired during the alignment process. The process automatically measures and corrects.
- the acquired alignment image, coordinates, and the like are stored in the storage device 132 as parameters.
- the inspection area setting tab 506 is selected to switch the inspection condition setting screen to the screen shown in FIG. 10 and set the inspection area (step 408 in FIG. 4).
- the inspection area the inspection chip and the inspection area in the chip can be specified. Although it is possible to specify the entire area of all chips, if you want to reduce the inspection conditions, or if you do not need to inspect all the chips, or you want to inspect only a specific cell or a part of the area in the chip In this case, an arbitrary area can be specified.
- the layout display 513 of FIG. 10 is a wafer display
- the inspection area is selected by clicking on the chip to be inspected from the chip arrangement on the wafer surface.
- the layout display 513 is a die display
- the inspection area is selected. This is performed by selecting a cell to be inspected from the cell arrangement.
- FIG. 10 shows the case of wafer display.
- the inspection condition setting screen shown in FIG. 10 displays the inspection condition 1001 set in step 403 in FIG. 4.
- the total inspection time is estimated, and the inspection time estimation result 1003 is displayed. Is displayed.
- the cell matte edge non-inspection area is set, the inspection mode is selected, and the number of stripes is input.
- the operator determines the inspection area while checking the test time calculation result 1003.
- the input inspection area data is stored in the storage device 132 as a parameter.
- the brightness / contrast tab 507 is selected, and brightness / contrast calibration is set (step 409 in FIG. 4).
- calibration in order to adjust the brightness and contrast of an image at the time of inspection, an image is acquired, and gain adjustment and brightness correction are performed according to the signal amount based on the brightness distribution. Coordinates for performing calibration, brightness gain, offset value, and the like are stored in the storage device 132 as parameters.
- an image can be actually acquired under various conditions set up to here.
- an image is acquired by setting image processing conditions for detecting a defect, and a threshold value for determining a defect is set (step 410 in FIG. 4).
- the image acquisition area can be arbitrarily specified, and is a small area within one chip.
- the small area refers to an area of an image having a length corresponding to one chip in the scanning width of an electron beam, for example.
- display the image of the part determined to be defective from the input threshold value on the image display device check whether the defect is actually detected, whether there is a false detection, and then set the threshold value appropriately Adjust to the value.
- the optimum inspection conditions are determined by repeating the threshold value input, image processing execution, defect detection and error detection status confirmation, and threshold value re-input. This series of operations (step 411 in FIG. 4) is called test inspection, and is performed by selecting the test inspection tab 509.
- the image processing calculation is executed by the calculation unit 133.
- the threshold value may be a combination of threshold values of a plurality of items, and the defect determination unit 134 executes the defect determination. Both can be realized by executing a program of the CPU that is the processing unit described above.
- Various parameters set here are stored in the storage device 132.
- step 412 in FIG. 4 When it is determined in step 410 in FIG. 4 that the defect is correctly detected and there is no false detection (step 412 in FIG. 4), all conditions necessary for the inspection are completed.
- the determination in step 412 in FIG. 4 may be performed manually by an operator, or may be determined automatically by setting determination conditions in advance.
- the image display device displays a selection screen as to whether or not to continue the inspection, and the operator makes a determination as necessary (step 413 in FIG. 4).
- step 413 when “Yes” is selected in step 413 using a keyboard or a mouse, all the conditions set up to step 412 are read from the storage device 132 and signaled from the system control unit 135 to various control units. Is sent and the inspection is executed (step 414 in FIG. 4).
- the inspection result is stored as a recipe file together with the above-described conditions (step 415 in FIG. 4), and the inspection is completed. If “No” is selected in step 413, the image is saved as a recipe file without including the inspection result.
- the inspection condition setting screen constituting the inspection condition setting unit shown in FIG. 5 and FIG. 10 is not limited to the examples in FIG. 5 and FIG. .
- the secondary beam signal in the single beam mode is directly detected by the secondary beam detector 140 for single beam.
- the amount of acquisition of the secondary beam fluctuates due to the change of the secondary beam trajectory due to scanning deflection or the fluctuation of the secondary beam trajectory due to charging.
- the amount of loss of the secondary beam signal varies within the field of view, and image shading occurs.
- the secondary beam in the single beam mode, the secondary beam is once collided with the reflector and the generated secondary electrons are detected by the detector.
- the SN ratio is degraded due to an increase in shot noise, but the above-described shading of the image is improved.
- the multi-beam mode no reflector is used, and the configuration is the same as that of the first embodiment shown in FIG. Further, since the procedure for performing the inspection is the same as that of the first embodiment, the description thereof is omitted.
- FIG. 6 shows an apparatus configuration in the present embodiment and an outline when a wafer pattern inspection is performed in the single beam mode in this configuration.
- the same parts as those in the first embodiment are omitted.
- the difference from the configuration of FIG. 1 (or FIG. 2) is that a reflection plate 601 is added, and a single beam detector is a single beam detector that can take in secondary electrons generated from the reflection plate 601. There are only two points changed to 640.
- the primary beam 203 is emitted from the electron source 102, passes through a lens or the like, and is irradiated onto the surface of the wafer 115 as a sample, and a secondary beam 220 is generated.
- the steps so far are the same as in the first embodiment.
- the secondary beam 220 passes through the charging control electrode 114, is subjected to the focusing action of the objective lens 112, and is separated from the orbit of the primary beam by the beam separator 111 having a deflection action with respect to the secondary beam. Collide with.
- the reflector 601 has an opening because it needs not to obstruct the passage of the primary beam.
- FIG. 6 for the convenience of the drawing, it is described that the portion where the aperture array 108 and the lens array 109 are arranged is larger in the horizontal direction than the aperture diameter of the reflector 601. Even in the multi-beam mode, it is necessary not to obstruct the passage of the primary beam, and the opening diameter of the reflecting plate 601 is larger, and the opening diameter is about several mm to several hundred mm.
- the opening diameter was 20 mm
- the deflection angle of the beam separator 111 was 3 degrees, the same as in Example 1. This numerical value is an example, and the apparatus can be realized when the deflection angle for the single beam mode is in the range of 1 to 15 degrees, as in the first embodiment.
- the description is omitted here, and only the procedure for performing the inspection will be described.
- the present embodiment is the same as the inspection procedure described in the first embodiment except that the selection of the multi / single beam mode is automatically performed by the switching condition setting unit of the system control unit 135. In that case, the description is omitted.
- FIG. 7A is a flowchart from when a wafer to be inspected is loaded into this apparatus to when inspection is completed, and optimum conditions are determined based on this procedure when creating a recipe.
- the operator starts inspection through the input / output unit 136 equipped with an image display device, and loads a wafer to be inspected (step 401 in FIG. 7A).
- an inspection condition setting screen constituting an inspection condition setting unit shown in FIG. 8 appears on the image display device.
- FIG. 8 shows the case where the irradiation condition input tab 502 is selected from the plurality of tabs 501 to 509.
- the inspection area setting tab 506 is selected, the screen shown in FIG. 10 is displayed as in the first embodiment.
- the precharge tab 501 is selected, and conditions for setting the wafer to a desired charging potential are input using a keyboard, mouse, or the like (step 402 in FIG. 7A).
- the operator selects the irradiation condition input tab 502 and sets inspection conditions (step 701 in FIG. 7A).
- the operator sets inspection conditions such as irradiation energy, beam current, charge control electrode voltage, sampling clock, pixel size, field size, and number of additions in the inspection condition input box 801 according to the wafer to be inspected.
- a judgment screen 803 appears on the image display device, and the multi-beam mode or the single beam mode is automatically set by the switching condition setting unit of the system control unit 135 depending on the combination of the conditions input from the input / output unit 136. It is determined and displayed (step 702 in FIG. 7A).
- OK the setting of inspection conditions is completed (step 703 in FIG. 7A).
- the set conditions are stored in the storage device 132 as in the first embodiment. Needless to say, the switching condition setting unit can be realized as a program processing of the CPU of the system control unit 135.
- FIG. 7B shows details of the multi / single beam mode automatic determination step 702.
- Steps 704a to 704f are inspection condition determination steps for determining whether or not the various inspection conditions set in step 701 are compatible with the multi-beam mode. If “Yes” is selected in all of steps 704a to 704f, the multi-mode is selected. It is determined as the beam mode, otherwise it is determined as the single beam mode. In the single beam mode, it is possible to take a wide range of various inspection conditions in step 701, but in the multi-beam mode, it is necessary to take each within a certain range.
- the multi-beam mode can be selected only when conditions within the range that can be used in the multi-beam mode are set for the inspection conditions. For example, in the multi-beam mode, if the irradiation energy to the sample is changed significantly, it will be difficult to obtain the primary beam on the sample and to obtain the secondary beam. . Therefore, in the inspection condition determination step 704a, determination is made based on whether the irradiation energy is less than E eV.
- the inspection condition determination steps 704a to 704f are sequentially determined. However, determination by parallel processing may be performed using a program in the CPU of the system control unit 135. Further, the determination may be made based on a composite result of several conditions such as a product of irradiation energy and beam current. Further, the various items listed in the inspection condition determination steps 704a to 704f are examples, and the determination may be performed based on other conditions.
- step 405 in FIG. 7A setting of the focus correction amount (step 405 in FIG. 7A), layout setting (step 406 in FIG. 7A), alignment (step 407 in FIG. 7A), inspection area setting (step in FIG. 7A) 408), brightness / contrast calibration (step 409 in FIG. 7A) is performed. All the parameters set by these are stored in the storage device 132.
- the operator selects the image processing tab 508, sets an image processing condition for detecting a defect, acquires an image, and sets a threshold value for determining a defect (step 410 in FIG. 7A). ).
- the image acquisition area is a small area in one chip as in the first embodiment.
- an image of a portion determined as a defect by the threshold value input from the input / output unit 136 is displayed on the image display device.
- the test inspection tab 509 is selected, and the test inspection (step 411 in FIG. 7A) is performed. All the various parameters that have been set are stored in the storage device 132.
- step 412 in FIG. 7A When the defect is correctly detected in step 411 in FIG. 7A and it is determined that there is no false detection (step 412 in FIG. 7A), all the conditions required for the inspection are completed.
- the determination in step 412 in FIG. 7A may be performed manually by the operator, or may be determined automatically by setting determination conditions in advance.
- step 413 in FIG. 7A Since the image display device displays a selection screen as to whether or not to continue the inspection, the operator makes a determination as necessary (step 413 in FIG. 7A).
- step 413 in FIG. 7A When “Yes” is selected in step 413 in FIG. 7A by the input / output unit 136, all the conditions set up to step 412 in FIG. 7A are read from the storage device, a signal is sent to the control unit, and the inspection is executed. (Step 414 in FIG. 7A).
- the inspection result is saved as a recipe file together with the above-described conditions (step 415 in FIG. 7A), and the inspection is completed. If “No” is selected in step 413 of FIG. 7A, the inspection result is not included and saved as a recipe file.
- the inspection condition setting screen constituting the inspection condition setting unit whose example is shown in FIG. 8 is not limited to the example of FIG. 8 and can be variously modified.
- the inspection condition is set by selecting one type in one recipe creation, and switching between the multi / single beam mode can be performed according to the set inspection conditions. Only one was selected.
- the characteristics differ for each cell in the wafer chip, and it may be desirable to switch between the multi-beam mode and the single beam mode within the chip.
- an example is shown in which means for selecting a different mode for each cell when setting an inspection region is shown. Since the basic apparatus configuration and the outline of each mode are the same as those in the first to third embodiments, the description thereof will be omitted, and only the procedure for carrying out the inspection will be described here.
- this embodiment is the same as the inspection execution procedure described in Embodiments 1 to 3 except for the inspection area setting step, and the inspection execution procedure follows FIG. 4 or FIGS. 7A and 7B.
- This embodiment will be described with reference to FIGS. 7A and 7B, but the effect of the invention is not lost even when the procedure for performing the inspection of FIG. 4 is followed.
- the description is omitted.
- FIG. 7A, 7B, 8 and 9 The inspection procedure in this embodiment will be described with reference to FIGS. 7A, 7B, 8 and 9.
- FIG. Hereinafter, unless otherwise specified, refer to FIG.
- the operator starts the inspection through the image display device, and loads the wafer to be inspected (step 401 in FIG. 7A), setting the inspection conditions that constitute the inspection condition setting unit shown in FIG. A screen appears.
- FIG. 8 shows a case where the irradiation condition input tab 502 is selected.
- the precharge tab 501 is selected, and conditions for setting the wafer to a desired charging potential are input (step 402 in FIG. 7A).
- the operator selects the irradiation condition input tab 502 and sets basic inspection conditions (step 701 in FIG. 7A).
- the operator sets inspection conditions such as irradiation energy, beam current, charging control electrode voltage, sampling clock, pixel size, and number of additions on the inspection condition input screen 801 in accordance with the wafer to be inspected.
- the determination button 802 is pressed, a determination screen 803 appears, and the multi-beam mode or the single beam mode is determined by the CPU in the system control unit 135 or the like according to the combination of the input conditions and displayed on the display device (step in FIG. 702).
- OK the setting of inspection conditions is completed (step 703 in FIG. 7A).
- the set conditions are stored in the storage device 132 as in the first to third embodiments.
- the condition set at this time becomes a basic inspection condition, and in the inspection region setting step, the region not designated as another region is inspected under the condition set in step 703 in FIG. 7A. Details will be described later.
- the focus correction amount setting (step 405 in FIG. 7A), the layout setting (step 406 in FIG. 7A), and the alignment (step 407 in FIG. 7A) are performed.
- the parameters set by these are stored in the storage device 132.
- the inspection area setting tab 506 is selected, the inspection condition setting screen is switched to the screen shown in FIG. 9, and the inspection area is set (step 408 in FIG. 7A).
- the inspection area is set (step 408 in FIG. 7A).
- the inspection chip and an arbitrary inspection area in the chip can be designated.
- the layout display 513 is a wafer display in FIG. If the chip to be inspected is selected by clicking, and the layout display 513 is a die display, the cell to be inspected is selected from the cell arrangement in the chip. In addition to this, in this embodiment, it is possible to input different inspection conditions for each cell.
- the layout display 513 selects die display for setting for each cell.
- the inspection condition 901 in FIG. 9 the basic inspection condition set in step 701 in FIG. 7A is displayed, and a plurality of different inspection conditions can be added and input here. In this example, “Condition B” was added separately from the basic inspection conditions.
- a plurality of area setting sections 904 are displayed at the bottom of the layout display 513 in FIG.
- Check the area setting condition click the cell to be set as the condition, and set the inspection area for each inspection condition.
- the total inspection time is estimated and displayed in the inspection time calculation result 903.
- a cell mat edge non-inspection area is set, an inspection mode is selected, and the number of stripes is input for each inspection condition.
- the operator determines the inspection area while confirming the test time estimation result 903 shown in FIG.
- the input inspection area data is stored in the storage device 132 as a parameter.
- brightness / contrast calibration (step 409 in FIG. 7A) is performed.
- the parameters set by these are stored in the storage device 132.
- the operator selects the image processing tab 508, sets an image processing condition for detecting a defect, acquires an image, and sets a threshold value for determining a defect (in FIG. 7A).
- the image acquisition area is a small area in one chip as in the first to third embodiments.
- an image of a portion determined as a defect by the input threshold value is displayed on the image display device of the input / output unit 136.
- the test inspection tab 509 is selected, and the test inspection (step 411 in FIG. 7A) is performed. All the various parameters that have been set are stored in the storage device 132.
- step 411 When the defect is correctly detected in step 410 of FIG. 7A and it is determined that there is no false detection (step 411 in FIG. 7A), all the conditions required for the inspection are completed.
- the determination in step 411 may be performed manually by an operator, or may be determined automatically by setting a determination condition in advance.
- Step 412 in FIG. 7A Since the image display device displays a selection screen as to whether or not to continue the inspection, the operator makes a determination as necessary (step 412 in FIG. 7A).
- Step 412 all the conditions set up to Step 411 are read from the storage device, a signal is sent to each control unit, and an inspection is executed (Step 413 in FIG. 7A).
- the inspection result is saved as a recipe file together with the above-described conditions (step 414 in FIG. 7A), and the inspection is completed. If “No” is selected in step 412 in FIG. 7A, the inspection result is not included and saved as a recipe file.
- the inspection condition setting screen whose example is shown in FIG. 9 is not limited to the example of FIG. 9 and can be variously modified.
- the effect of the present invention can be achieved even in the case of a measurement device or a general electron microscope. I will not lose.
- the wafer is taken as an example of the sample to be observed and inspected.
- the sample is a part of the wafer cut out or a structure other than a semiconductor such as a magnetic disk or a biological sample. Even in this case, the effect of the present invention is not lost.
- the present invention is useful as a charged particle beam application apparatus, in particular, as a highly sensitive and highly efficient observation / inspection and measurement technique using a charged particle beam.
- secondary beam detector for multibeam 121c ... secondary beam detector for multibeam, 130a ... amplifier circuit, 130b ... amplifier circuit, 130c ... amplifier circuit, 131 ... A / D converter, 132 ... storage device, 133 ... calculation unit, 134 ... defect determination unit, 135 ... system control unit, 136 ... image display device 137 ... Scanning signal generation device, 138 ... Stage control device, 139 ... Optical system control circuit, 140 ... Secondary beam detector for single beam, 141 ... Beam selection diaphragm, 142 ... Amplification circuit, 201 ... second electron source image, 202 ... third electron source image, 202 ... primary beam, 206 ... first electron source image, 220 ...
- Focus correction amount setting step 406 ... Layout setting step, 407 ... Alignment step, 408 ... Inspection region setting step, 409 ... Brightness / contrast calibration step, 410 ... Image processing condition / threshold setting step, 411 ... Test inspection step, 412 ... False detection confirmation step, 413 ... Inspection continuation confirmation step, 414 ... Inspection execution step 415 ... Recipe storage step 501 ... Precharge tab, 502 ... Illumination condition input tab, 503 ... Focus correction tab, 504 ... Layout input tab, 505 ... Alignment setting tab, 506 ... Inspection area setting tab, 507 ... Brightness / contrast tab, 508 ... Image processing Tab, 509 ... Test inspection tab, 510 ...
- Inspection condition input screen 511 ... Confirm button, 512 ... Confirmation screen, 513 ... Layout display, 514 ... Multi / single beam mode selection box, 601 ... Reflector, 602 ... Secondary electron, 640 ... Secondary electron detector, 701 ... Inspection condition setting step, 702 ... Multi / single beam mode automatic determination step, 703 ... Inspection condition setting completion step, 704a ... Inspection condition determination step, 704b ... Inspection condition determination step, 704c ... Inspection condition determination step, 704d ... Inspection Condition determination step, 704e ... Inspection condition determination step, 704f ... Inspection condition determination step, 801 ... Inspection condition input screen, 802 ... Decision button, 803 ... Determination screen, 901 ... Inspection conditions, 902 ... Inspection method, 903 ... Inspection time estimation result, 904 ... Area setting section 1001 ... Inspection conditions, 1002 ... Inspection method, 1003 ... Inspection time estimation result.
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Abstract
Description
120…二次ビーム、121a…マルチビーム用二次ビーム検出器、121b…マルチビーム用二次ビーム検出器、121c…マルチビーム用二次ビーム検出器、
130a…増幅回路、130b…増幅回路、130c…増幅回路、131…A/D変換機、132…記憶装置、133…演算部、134…欠陥判定部、135…システム制御部、136…画像表示装置を備えた入出力部、137…走査信号発生装置、138…ステージ制御装置、139…光学系制御回路、140…シングルビーム用二次ビーム検出器、141…ビーム選択絞り、142…増幅回路、
201…第二の電子源像、202…第三の電子源像、202…一次ビーム、206…第一の電子源像、220…二次ビーム、
401…ウェハロードステップ、402…プリチャージ条件出しステップ、403…検査条件設定ステップ、404…検査条件設定完了ステップ、405…焦点補正量設定ステップ、406…レイアウト設定ステップ、407…アライメントステップ、408…検査領域設定ステップ、409…明るさ・コントラストキャリブレーションステップ、410…画像処理条件・閾値設定ステップ、411…テスト検査ステップ、412…誤検出確認ステップ、413…検査続行確認ステップ、414…検査実行ステップ、415…レシピ保存ステップ、
401…ウェハロードステップ、402…プリチャージ条件出しステップ、403…検査条件設定ステップ、404…検査条件設定完了ステップ、405…焦点補正量設定ステップ、406…レイアウト設定ステップ、407…アライメントステップ、408…検査領域設定ステップ、409…明るさ・コントラストキャリブレーションステップ、410…画像処理条件・閾値設定ステップ、411…テスト検査ステップ、412…誤検出確認ステップ、413…検査続行確認ステップ、414…検査実行ステップ、415…レシピ保存ステップ、
501…プリチャージタブ、502…照射条件入力タブ、503…焦点補正タブ、504…レイアウト入力タブ、505…アライメント設定タブ、506…検査領域設定タブ、507…明るさ・コントラストタブ、508…画像処理タブ、509…テスト検査タブ、510…検査条件入力画面、511…決定ボタン、512…確認画面、513…レイアウト表示、514…マルチ/シングルビームモード選択ボックス、
601…反射板、602…二次電子、640…二次電子検出器、
701…検査条件設定ステップ、702…マルチ/シングルビームモード自動判定ステップ、703…検査条件設定完了ステップ、704a…検査条件判定ステップ、704b…検査条件判定ステップ、704c…検査条件判定ステップ、704d…検査条件判定ステップ、704e…検査条件判定ステップ、704f…検査条件判定ステップ、
801…検査条件入力画面、802…決定ボタン、803…判定画面、
901…検査条件、902…検査方法、903…検査時間試算結果、904…領域設定部、
1001…検査条件、1002…検査方法、1003…検査時間試算結果。
Claims (20)
- 試料の観察を行う荷電粒子線応用装置であって、
試料上に複数の荷電粒子線を照射するための一次光学系と、
前記試料上から発生した二次荷電粒子線を検出するための第一の検出器と、
観察条件を設定するための観察条件設定部と、
前記複数の荷電粒子線の数の切替え条件を設定する切替え条件設定部と、
前記切替え条件に基づき、前記複数の荷電粒子線の数を切替えるための切替え制御部と、
前記観察条件と前記切替え条件を記憶するための記憶部とを備える、
ことを特徴とする荷電粒子線応用装置。 - 請求項1に記載の荷電粒子線応用装置であって、
前記荷電粒子線の入射方向に応じて前記荷電粒子線の出射方向を分離するビームセパレーターと、
前記第一の検出器とは別に前記試料上から発生した二次荷電粒子線を検出するための第二の検出器とを更に備える、
ことを特徴とする荷電粒子線応用装置。 - 請求項2に記載の荷電粒子線応用装置であって、
前記第一の検出器と前記第二の検出器は、前記一次光学系の中心軸に対して異なる方位角に配置される、
ことを特徴とする荷電粒子線応用装置。 - 請求項2に記載の荷電粒子線応用装置であって、
前記試料上から発生した前記二次荷電粒子線が衝突する反射板を更に備え、
前記第二の検出器は、前記二次荷電粒子線が前記反射板に衝突して発生した二次荷電粒子を検出する、
ことを特徴とする荷電粒子線応用装置。 - 請求項1に記載の荷電粒子線応用装置であって、
前記切替え条件設定部は、前記観察条件に応じて前記切替え条件を自動的に設定する、
ことを特徴とする荷電粒子線応用装置。 - 請求項1に記載の荷電粒子線応用装置であって、
前記観察条件及び前記切替え条件を、前記試料を複数の小領域に分類した、当該小領域ごとに設定する、
ことを特徴とする荷電粒子線応用装置。 - 試料の観察を行う荷電粒子線応用装置であって、
試料上に複数の荷電粒子線を照射するための一次光学系と、
前記試料上から発生した二次荷電粒子線を検出するための第一の検出器と、
前記一次光学系を制御し、複数の前記荷電粒子線の数を切換え、マルチビームモード及びシングルビームモードを選択する制御部とを備え、
前記制御部は、観察条件を設定するための観察条件設定部と、複数の前記荷電粒子線の数を切替える切換え条件を設定する切替え条件設定部と、前記切替え条件に基づき、複数の前記荷電粒子線の数を切替える切替え制御部とを有する、
ことを特徴とする荷電粒子線応用装置。 - 請求項7に記載の荷電粒子線応用装置であって、
前記荷電粒子線の入射方向に応じて前記荷電粒子線の出射方向を分離するビームセパレーターと、前記試料上から発生した前記二次荷電粒子線を検出するための第二の検出器を更に備える、
ことを特徴とする荷電粒子線応用装置。 - 請求項8に記載の荷電粒子線応用装置であって、
前記第一の検出器と前記第二の検出器は、前記一次光学系の中心軸に対して異なる方位角に配置される、
ことを特徴とする荷電粒子線応用装置。 - 請求項8に記載の荷電粒子線応用装置であって、
前記試料上から発生した前記二次荷電粒子線を反射する反射板を更に備え、
前記第二の検出器は、前記試料上から発生した前記二次荷電粒子線が前記反射板に衝突して発生した二次荷電粒子を検出する、
ことを特徴とする荷電粒子線応用装置。 - 請求項7に記載の荷電粒子線応用装置であって、
前記制御部は、前記観察条件と前記切替え条件を記憶する記憶部を更に有する、
ことを特徴とする荷電粒子線応用装置。 - 請求項11に記載の荷電粒子線応用装置であって、
前記切替え条件設定部は、前記観察条件設置部で設定された前記観察条件に基づき、前記切替え条件を自動的に設定する、
ことを特徴とする荷電粒子線応用装置。 - 請求項7に記載の荷電粒子線応用装置であって、
前記制御部は、前記試料を複数の小領域に分類し、前記分類された小領域ごとに前記観察条件及び前記切替え条件を設定する、
ことを特徴とする荷電粒子線応用装置。 - 請求項12に記載の荷電粒子線応用装置であって、
前記制御部は、前記試料を複数の小領域に分類し、前記分類された小領域ごとに前記観察条件及び前記切替え条件を設定する、
ことを特徴とする荷電粒子線応用装置。 - 試料上に複数の荷電粒子線を照射するための一次光学系と、前記試料上から発生した二次荷電粒子線を検出するための検出器と、前記一次光学系を制御する制御部とを備え、前記試料の観察を行う荷電粒子線応用装置を用いた試料観察方法であって、
前記試料の観察条件を設定し、
マルチビームモード及びシングルビームモードを選択するため、複数の前記荷電粒子線の数を切替える切替え条件を設定し、
前記制御部は、設定された前記切換え条件により、前記一次光学系を制御し、複数の前記荷電粒子線の数を切替えて、前記試料の観察を行う、
ことを特徴とする試料観察方法。 - 請求項15に記載の試料観察方法であって、
前記制御部は、前記観察条件に応じて前記切替え条件を自動的に設定することを特徴とする試料観察方法。 - 請求項15に記載の試料観察方法であって、
前記制御部は、画像表示装置を更に備え、前記画像表示装置に前記観察条件を設定する観察条件設定画面を表示することを特徴とする試料観察方法。 - 請求項15に記載の試料観察方法であって、
前記制御部は、画像表示装置を更に備えており、前記画像表示装置に前記観察条件を設定する観察条件設定画面を表示し、
前記観察条件設定画面から設定された前記観察条件に基づき、前記切換え条件を自動的に設定することを特徴とする試料観察方法。 - 請求項18に記載の試料観察方法であって、
前記制御部は、前記画像表示装置に自動的に設定された前記切換え条件を表示することを特徴とする試料観察方法。 - 請求項15に記載の試料観察方法であって、
前記制御部は、前記試料を複数の小領域に分類し、前記観察条件及び前記切替え条件を分類された前記小領域ごとに設定することを特徴とする試料観察方法。
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