WO2010134418A1 - Tête à jet d'encre et procédé pour sa production - Google Patents

Tête à jet d'encre et procédé pour sa production Download PDF

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Publication number
WO2010134418A1
WO2010134418A1 PCT/JP2010/057346 JP2010057346W WO2010134418A1 WO 2010134418 A1 WO2010134418 A1 WO 2010134418A1 JP 2010057346 W JP2010057346 W JP 2010057346W WO 2010134418 A1 WO2010134418 A1 WO 2010134418A1
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WO
WIPO (PCT)
Prior art keywords
ink
pressure chamber
silicon substrate
glass substrate
bonded
Prior art date
Application number
PCT/JP2010/057346
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English (en)
Japanese (ja)
Inventor
奈帆美 久保
泰男 西
Original Assignee
コニカミノルタホールディングス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to JP2011514370A priority Critical patent/JPWO2010134418A1/ja
Publication of WO2010134418A1 publication Critical patent/WO2010134418A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14201—Structure of print heads with piezoelectric elements
    • B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/11—Embodiments of or processes related to ink-jet heads characterised by specific geometrical characteristics

Definitions

  • the present invention relates to an inkjet head and a manufacturing method thereof.
  • the on-demand type ink jet recording apparatus selectively applies ejection energy to a plurality of inks in a pressure chamber formed on an ink jet head, thereby ejecting ink droplets from minute ink ejection ports to land on an object.
  • Inkjet recording devices can perform extremely fine recording, and thus are being applied not only to the field of image printing but also to the technical field of manufacturing industrial equipment such as liquid crystal display devices.
  • the demand for miniaturization is increasing.
  • an ink jet head described in Patent Document 1 processes and forms a plurality of fine pressure chambers and ink discharge ports on a silicon substrate. Processing of pressure chambers and ink discharge ports on the silicon substrate can be performed using semiconductor integrated circuit manufacturing technology, and pressure chambers and ink discharge ports with extremely fine pitch can be patterned. As a result, the demand for miniaturization can be satisfied.
  • the present invention has been made in view of such circumstances, and the pressure chambers and ink discharge ports can be easily and densely patterned on a silicon substrate using semiconductor integrated circuit manufacturing technology, and can be driven at a low voltage.
  • Another object of the present invention is to provide an inkjet head excellent in ejection efficiency and a method for manufacturing the inkjet head.
  • a first silicon substrate having an ink discharge port formed therethrough;
  • a glass substrate bonded to one surface of the first silicon substrate and having an ink channel hole corresponding to the ink ejection port formed therethrough;
  • a pressure chamber corresponding to the ink flow path hole is grooved on one surface, and a piezoelectric element for changing the volume of the pressure chamber is provided on the other surface.
  • a method of manufacturing an ink jet head comprising: forming a protrusion protruding into the pressure chamber at a position facing the pressure chamber on a surface of the glass substrate that is bonded to the second silicon substrate.
  • the pressure chamber and the ink discharge port can be easily formed in a high density pattern on the silicon substrate using the manufacturing technology of the semiconductor integrated circuit, and can be driven at a low voltage, and can be driven at a low voltage. And a manufacturing method thereof.
  • FIG. 1 is a diagram schematically illustrating an example of an ink jet head according to an embodiment of the present invention, disassembled for each component. It is a top view of the inkjet head shown in FIG.
  • FIG. 3 is an enlarged sectional view taken along line X-X ′ in FIG. 2.
  • It is a figure which shows the joining process of a 1st silicon substrate, a glass substrate, and a 2nd silicon substrate.
  • It is a graph which shows the relationship between a pressure chamber height and a drive voltage.
  • It shows the relationship between the opening diameter of an ink discharge outlet, and the refill speed.
  • FIG. 1 schematically shows an example of an ink jet head according to an embodiment of the present invention, disassembled for each component, and the ink jet head HD includes a first silicon substrate 1, a glass substrate 6, a second silicon substrate 2, and A piezoelectric element 3 is provided.
  • a plurality of ink discharge ports 101 are formed through the first silicon substrate 1.
  • one row in which nine ink ejection ports 101 are arranged at a predetermined interval is formed, but the number of ink ejection ports 101 in one row and the number of rows are not limited.
  • the glass substrate 6 is bonded to the lower surface of the first silicon substrate 1, and the ink flow path hole 601 having a diameter larger than that of the ink discharge port 101 at a position corresponding to each ink discharge port 101 of the first silicon substrate 1. Is formed through.
  • the ink channel hole 601 serves as a channel for smoothly flowing ink in a pressure chamber, which will be described later, toward the ink discharge port 101 of the first silicon substrate 1.
  • the glass substrate 6 is provided with a protrusion 26 protruding into the pressure chamber groove 204 at a position facing a pressure chamber groove 204 described later on the surface of the glass substrate 6 on the side bonded to the second silicon substrate 2. ing.
  • a protrusion 26 protruding into the pressure chamber groove 204 at a position facing a pressure chamber groove 204 described later on the surface of the glass substrate 6 on the side bonded to the second silicon substrate 2.
  • one rectangular parallelepiped protrusion 26 is formed for each pressure chamber groove 204, but the shape of the protrusion 26 and the number of protrusions 26 for one pressure chamber groove 204 are not limited.
  • the second silicon substrate 2 is covered with a glass substrate 6 and bonded thereto, whereby a pressure chamber groove 204 serving as a pressure chamber, an ink supply path groove 203 serving as an ink supply path, and a common ink chamber serving as a common ink chamber.
  • a groove 202 and an ink supply port 201 are formed.
  • the ink discharge ports 101 of the first silicon substrate 1, the ink flow path holes 21 and the protrusions 26 of the glass substrate 6, and the pressure chamber grooves 204 of the second silicon substrate 2 correspond one-to-one.
  • the first silicon substrate 1, the glass substrate 6, and the second silicon substrate 2 are bonded.
  • the piezoelectric element 3 is bonded to a position corresponding to each pressure chamber 204 on the surface opposite to the surface to be bonded to the glass substrate 6 of the second silicon substrate 2.
  • the piezoelectric element 3 is an actuator that is made of PZT (lead zirconate titanate) and ejects ink from the ink ejection port 101.
  • a room formed by the pressure chamber groove 204 and the glass substrate 6 is referred to as a pressure chamber 204, and a room formed by the ink supply path groove 203 and the glass substrate 6 is referred to as an ink supply path 203.
  • a chamber formed by the common ink chamber groove 202 and the glass substrate 6 is referred to as a common ink chamber 202.
  • FIG. 2 is a plan view of the inkjet head shown in FIG.
  • FIG. 3 is an enlarged cross-sectional view along the line X-X ′ in FIG. 2.
  • the second silicon substrate 2, the glass substrate 6, and the first silicon substrate 1 are arranged in this order from the bottom, and the ink ejection surface 1a (upper surface) of the first silicon substrate 1 on which ink droplets are ejected. ) Is formed in a plane.
  • Each pressure chamber 204 has an opening area larger than the ink flow path hole 601 formed in the glass substrate 6, and a bonding surface (pressure chamber forming surface) of the second silicon substrate 2 with the glass substrate 6. ) To a predetermined depth. Further, the protrusion 26 formed on the glass substrate 6 protrudes into the pressure chamber 204 without contacting the inner wall surface of the pressure chamber 204.
  • the piezoelectric elements 3 are individually bonded to the back side of each pressure chamber 204, that is, the side opposite to the bonding surface of the second silicon substrate 2 with the glass substrate 6, and the electro-mechanical conversion of the piezoelectric elements 3
  • oscillating the bottom surface 25 of each pressure chamber 204 by the action and changing the volume in the pressure chamber 204 ejection energy is applied to the ink in the pressure chamber 204.
  • the ink in the pressure chamber 204 to which ejection energy is applied by driving the piezoelectric element 3 is ejected from the ink ejection port 101 through the ink flow path hole 601.
  • each pressure chamber 204 functions as a diaphragm. For this reason, the depth of the recess when the pressure chamber 204 is dry-etched on the second silicon substrate 2 is adjusted so that the thickness of the bottom surface 25 of each pressure chamber 204 is preferably 1 to 20 ⁇ m. .
  • the first silicon substrate 1 is manufactured by using a silicon substrate having a thickness of about 150 ⁇ m to 500 ⁇ m as a base material, for example, using a known photolithography technique (resist coating, exposure, development), an etching technique, and the like. This is performed by a procedure of penetrating the ink discharge port 101.
  • the opening diameter of the ink discharge port 101 is the diameter of the opening on the ink droplet outlet side, and is preferably 5 ⁇ m or less.
  • the shape of the opening of the ink discharge port 101 is not limited to the circular shape shown in FIGS. 1 and 2, and may be, for example, a polygonal cross-section or a cross-sectional star instead of a circular cross-section.
  • the cross-sectional shape is not a circle, the diameter when the cross-sectional area is replaced with a circle having the same area is defined as the opening diameter.
  • the glass substrate 6 uses a glass substrate having a thickness of about 100 ⁇ m to 300 ⁇ m as a base material, and, for example, a known photolithography technique (resist coating, exposure, development) and a sand blast technique or an etching technique that performs processing with fine spray particles. Etc., the ink flow passage hole 601 having a diameter larger than that of the ink discharge port 101 is formed and the projection 26 is formed.
  • the formation of the ink flow path hole 601 and the protrusion 26 is difficult to form a deep hole because there is no mask material having a required etching rate ratio, and the processing time is very long because the etching rate of the glass is slow. Since it is necessary, it is not possible to cope with only the above-described dry etching method, which is good at precise processing. Therefore, it is preferable to use the sandblast method.
  • the protrusion 26 is formed on the surface of the glass substrate 6 on the side to be bonded to the second silicon substrate 2 by a known photolithography technique (exposure, development) using a dry film resist having a thickness of about 50 ⁇ m.
  • a photoresist pattern is provided to provide
  • the protrusions 26 are formed to have a predetermined size and shape using a sand blast method.
  • the ink flow path hole 601 is formed on the surface of the glass substrate 6 on the side bonded to the first silicon substrate 1 by a known photolithography technique (exposure and development) using a dry film resist having a thickness of about 50 ⁇ m.
  • a photoresist pattern to be provided is formed.
  • the ink flow path hole 601 is formed to have a predetermined size and shape by using a sandblast method with the photoresist pattern as a mask.
  • the photoresist pattern is removed to complete the glass substrate 6.
  • the ink channel hole 601 may be processed by forming a photoresist pattern on the surface of the glass substrate 6 on the side to be bonded to the second silicon substrate 2.
  • the second silicon substrate 2 uses a silicon substrate having a thickness of about 150 ⁇ m to 500 ⁇ m as a base material.
  • a known photolithography technique resist coating, exposure, Development
  • etching technique thereby supplying pressure chamber grooves 204 serving as a plurality of pressure chambers communicating with the ink passage holes 601 of the glass substrate 6 and ink supply serving as a plurality of ink supply passages respectively communicating with the pressure chambers.
  • a path groove 203, a common ink chamber groove 202 serving as a common ink chamber communicating with the ink supply path, and an ink supply port 201 are formed.
  • the pressure chamber groove 204 has a width of about 150 ⁇ m to 350 ⁇ m, a depth of about 50 ⁇ m to 200 ⁇ m, and an ink supply.
  • the channel groove 203 is about 50 ⁇ m to 150 ⁇ m wide, the depth is about 30 ⁇ m to 150 ⁇ m, the common ink chamber groove is about 400 ⁇ m to 1000 ⁇ m wide, the depth is about 50 ⁇ m to 200 ⁇ m, and the ink supply port 201 is a through-hole with a diameter of about 400 ⁇ m to 1500 ⁇ m. is there.
  • the etching method for the silicon substrate is preferably a silicon (Si) anisotropic dry etching method capable of performing etching processing perpendicularly to the surface of the second silicon substrate.
  • silicon (Si) anisotropic dry etching method Sangyo Tosho Co., Ltd. “Semiconductor dry etching technology” and the like can be referred to.
  • the first silicon substrate 1, the glass substrate 6 and the second silicon substrate 2 which have been processed by the method described so far are bonded using an anodic bonding technique. This will be described below.
  • FIG. 4 is a diagram showing a bonding process of the first silicon substrate 1, the glass substrate 6, and the second silicon substrate 2.
  • FIG. 4A shows an ink discharge port (FIG. 4) using the silicon substrate as a base material.
  • the first silicon substrate 1 processed (not shown), the glass substrate 6 processed with ink flow path holes and protrusions (not shown), and the grooves such as the pressure chamber groove 204 are processed as described above.
  • the 2nd silicon substrate 2 formed by these is shown.
  • the first silicon substrate 1, the glass substrate 6 and the second silicon substrate 2 are bonded by anodic bonding.
  • silicon is used as a material constituting one of the substrates, and the other is silicon with a mobile ion, for example, a glass material containing sodium ions (Na + ).
  • a material having a linear expansion coefficient relatively similar to (Si) (the linear expansion coefficient of silicon is about 4.2 ⁇ 10 ⁇ 6 / ° C.), for example, borosilicate glass is used. .
  • borosilicate glass containing mobile ions hereinafter referred to as borosilicate glass
  • Pyrex registered trademark
  • Corning USA
  • Tempax Float registered trademark
  • Shot Japan Co., Ltd. have these linear expansion coefficients ⁇
  • the linear expansion coefficients of Pyrex (registered trademark) and Tempax Float (registered trademark) are both about 3.2 ⁇ 10 ⁇ 6 / ° C. ⁇ Is more preferable from the viewpoint of.
  • the base materials of the first silicon substrate 1 and the second silicon substrate 2 are both silicon substrates for ease of fine processing. Therefore, the material of the glass substrate 6 bonded to the second silicon substrate 2 and the first silicon substrate 1 by anodic bonding is preferably borosilicate glass.
  • the first silicon substrate 1, the glass substrate 6 of borosilicate glass, and the second silicon substrate 2 described above are overlaid in an appropriate positional relationship as shown in FIG. It fixes, the temperature of a junction part is made into a high temperature state, a voltage is applied using the DC high voltage power supply 4, and anodic bonding is carried out.
  • the anodic bonding of the first silicon substrate 1, the borosilicate glass substrate 6 and the second silicon substrate 2 will be described in detail.
  • the polarity of the voltage applied when anodic bonding is performed is positive (+) on the silicon substrate side and negative (-) on the borosilicate glass substrate side. If it does in this way, an electric current will flow at the same time that a joining interface closely_contact
  • the first silicon substrate 1 and the second silicon substrate 2 may be applied with a positive (+) voltage
  • the glass substrate 6 may be applied with a negative ( ⁇ ) voltage
  • the high temperature state at the time of joining is in the range of 300 ° C. to 550 ° C.
  • a constant temperature bath capable of maintaining such an atmospheric temperature or a simple method using a hot plate having good insulation with a built-in ceramic heater or the like. What is necessary is just to heat the junction part of the 1st silicon substrate 1, the glass substrate 6, and the 2nd silicon substrate 2.
  • the electric field strength of the DC voltage applied between the first silicon substrate 1, the glass substrate 6 and the second silicon substrate 2 by the DC high voltage power source 4 is preferably in the range of 30 kV / mm to 200 kV / mm.
  • the piezoelectric element 3 is bonded to the combined body A of the first silicon substrate 1, the glass substrate 6 and the second silicon substrate 2 bonded by anodic bonding as described above, and an ink jet head is completed.
  • the first silicon substrate 1 through which the ink discharge port 101 is formed is bonded to one surface of the first silicon substrate 1, and the ink discharge port 101
  • the glass substrate 6 in which the ink flow path hole 601 corresponding to the outlet 101 is formed penetratingly, and the pressure chamber 204 corresponding to the ink flow path hole 601 is grooved on one surface, and the pressure chamber is formed on the other surface.
  • the piezoelectric element 3 for changing the volume in 204 is provided, and the pressure chamber 204 is bonded to the glass substrate 6 so as to face the surface opposite to the first silicon substrate 1.
  • the second silicon substrate 2, and the ink in the pressure chamber 204 is ejected from the ink ejection port 101 by driving the piezoelectric element 3.
  • the ink discharge ports 101 and the pressure chambers 204 that require a high degree of miniaturization can both be processed and formed on the silicon substrates 1 and 2, a fine and high-density pattern can be formed using a semiconductor integrated circuit manufacturing technique. Is possible.
  • the glass substrate 6 is simply formed with a simple through-hole, and the processing work during sandblasting and dry etching is extremely simple.
  • the protrusion 26 protruding into the pressure chamber 204 is formed at a position facing the pressure chamber 204 on the surface of the glass substrate 6 on the side bonded to the second silicon substrate 2. ing.
  • the ejection efficiency affects the ejection speed of ink droplets when the piezoelectric element 3 is driven with a predetermined drive voltage. Therefore, it can be evaluated that the larger the ink droplet ejection speed at the same driving voltage, the higher the ink droplet ejection efficiency, and the lower the ink droplet ejection speed, the lower the ink droplet ejection efficiency.
  • the drive voltage can be lowered by adjusting the drive voltage so as to achieve the same discharge speed.
  • the ejection speed may be measured by, for example, strobe measurement using a CCD camera and the ink drop speed at the time when the ink droplet flies about 1 mm from the opening of the ink ejection port.
  • the ink compliance Cbulk [m 5 / N] which is a term related to the compression inside the fluid, is the pressure chamber volume V [m 3 ], the ink density ⁇ [kg / m 3 ], and the ink sound velocity. Is c [m / s], it is given by equation (1).
  • the volume of the pressure chamber 204 may be decreased as is apparent from the equation (1). Therefore, in the inkjet head HD, the volume of the pressure chamber is reduced by the protrusion, so that the compliance of the ink in the pressure chamber can be reduced, the discharge efficiency is improved, and low voltage driving is possible.
  • the volume in the pressure chamber 204 can be easily reduced without reducing the thickness of the second silicon substrate 2.
  • the bonding surface between the first silicon substrate 1 and the glass substrate 6 and the bonding surface between the glass substrate 6 and the second silicon substrate 2 are both anodic bonded. Therefore, no adhesive is present at all the joining portions, and it is possible to prevent the positional accuracy of the protrusions 26 and the pressure chambers 204 from being lowered due to variations in the thickness of the adhesive layer, and stable ejection characteristics can be obtained.
  • the protrusion 26 is formed so as not to contact the inner wall of the pressure chamber 204. Therefore, since the flow path resistance of the ink flowing into the ink discharge port 101 is reduced, the ink is sufficiently supplied to the ink discharge port 101, and there is no possibility that the ink refill to the ink discharge port 101 is hindered.
  • the time until the meniscus first returns to the initial position after ink droplet ejection is called the refill time.
  • the refill time is an important characteristic parameter that governs the maximum ejection frequency of the ink jet recording head.
  • the maximum discharge frequency here means the maximum discharge frequency at which characters and the like can be recorded while ensuring the stability of the droplet diameter and the droplet speed.
  • the refill operation will be in time for the discharge cycle of 100 kHz, and discharge will be possible.
  • Reducing the refill time ( ⁇ s) means increasing the refill speed (kHz).
  • the opening diameter of the ink discharge port 101 is set to 5 ⁇ m or less. As shown in the examples described later, even if the pressure chamber height H (see FIG. 3) is reduced as much as possible, the refill speed of 100 kHz or more can always be secured as long as the opening diameter of the ink discharge port is 5 ⁇ m or less. .
  • an ink jet head similar to the ink jet head HD shown in the above embodiment is manufactured according to the above manufacturing method, and the ink refill speed (kHz) when ink droplets are discharged from the ink discharge port of the ink jet head. ) And the discharge efficiency were measured.
  • the refill speed (kHz) is the reciprocal of the refill time.
  • the ink ejection efficiency was determined by measuring the speed of the ink droplets ejected while increasing the driving voltage applied to the piezoelectric element 3, and examining the driving voltage when the speed reached 6 m / s.
  • the ejection speed was measured by the strobe measurement using a CCD camera when the ink droplet flew about 1 mm from the opening of the ink ejection opening.
  • the pressure chamber height H in FIG. 3 (the distance between the tip surface of the protrusion 26 and the bottom surface of the pressure chamber, and the larger the protrusion amount, the smaller H).
  • a plurality of inkjet heads with various changes were produced. Specifically, the pressure chamber height H when there is no protrusion 26 was 130 ⁇ m, and the pressure chamber height H was changed as shown in FIG.
  • the nozzle was cylindrical, the nozzle length was 10 ⁇ m, and the opening diameter of the ink discharge port was changed as shown in FIG.
  • the shape of the pressure chamber and the nozzle between each channel in one ink jet head was the same.
  • FIG. 5 shows the relationship between the pressure chamber height and the drive voltage when each of the three types of ink having different ink viscosities is ejected with an ink ejection opening having a diameter of 10 ⁇ m.
  • FIG. 5 shows that in the case of ink of any viscosity, the driving voltage is lowered and the driving efficiency is improved as the pressure chamber height decreases.
  • FIG. 6 shows the relationship between the opening diameter of the ink discharge port and the refill speed when ink having a viscosity of 10 (cP) is discharged by a head having a pressure chamber height of 30 ⁇ m.
  • FIG. 6 shows that the refill speed increases as the opening diameter of the ink discharge port decreases.
  • FIG. 7 shows the relationship between the pressure chamber height and the refill speed when ink having a viscosity of 10 (cP) is ejected by a head having ink ejection opening diameters of 5 ⁇ m and 10 ⁇ m.
  • FIG. 7 shows that the refill speed decreases as the pressure chamber height decreases for any opening diameter.
  • the refill speed of 100 kHz or more can always be ensured if the opening diameter of the ink discharge port is 5 ⁇ m or less.

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  • Particle Formation And Scattering Control In Inkjet Printers (AREA)

Abstract

L'invention porte sur une tête à jet d'encre et sur un procédé pour sa production, laquelle tête est apte à être commandée par une basse tension, et a un excellent rendement de décharge, dans laquelle tête une chambre de pression et un orifice de décharge d'encre peuvent être formés par réalisation aisée de motif et avec une densité élevée sur un substrat en silicium à l'aide de la technologie de production d'un circuit intégré à semi-conducteur. Une saillie faisant saillie dans la chambre de pression est formée sur une surface d'un substrat en verre qui est réuni à un second substrat en silicium et en une position opposée à la chambre de pression.
PCT/JP2010/057346 2009-05-18 2010-04-26 Tête à jet d'encre et procédé pour sa production WO2010134418A1 (fr)

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JP2011514370A JPWO2010134418A1 (ja) 2009-05-18 2010-04-26 インクジェットヘッド及びその製造方法

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JP2009-119667 2009-05-18
JP2009119667 2009-05-18

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020044667A (ja) * 2018-09-14 2020-03-26 エスアイアイ・プリンテック株式会社 液体噴射ヘッド、液体噴射記録装置および駆動信号生成システム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6392746U (fr) * 1986-12-09 1988-06-15
JP2003063004A (ja) * 2001-08-29 2003-03-05 Matsushita Electric Ind Co Ltd 流体噴射装置及びその製造方法
JP2007160837A (ja) * 2005-12-16 2007-06-28 Konica Minolta Holdings Inc 液体吐出ヘッドの製造方法及び液体吐出ヘッド
JP2008207519A (ja) * 2007-02-28 2008-09-11 Konica Minolta Holdings Inc 液体吐出ヘッドの製造方法及び液体吐出ヘッド

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6392746U (fr) * 1986-12-09 1988-06-15
JP2003063004A (ja) * 2001-08-29 2003-03-05 Matsushita Electric Ind Co Ltd 流体噴射装置及びその製造方法
JP2007160837A (ja) * 2005-12-16 2007-06-28 Konica Minolta Holdings Inc 液体吐出ヘッドの製造方法及び液体吐出ヘッド
JP2008207519A (ja) * 2007-02-28 2008-09-11 Konica Minolta Holdings Inc 液体吐出ヘッドの製造方法及び液体吐出ヘッド

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020044667A (ja) * 2018-09-14 2020-03-26 エスアイアイ・プリンテック株式会社 液体噴射ヘッド、液体噴射記録装置および駆動信号生成システム
JP7145017B2 (ja) 2018-09-14 2022-09-30 エスアイアイ・プリンテック株式会社 液体噴射ヘッド、液体噴射記録装置および駆動信号生成システム

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