WO2010106841A1 - Laser à semi-conducteur - Google Patents

Laser à semi-conducteur Download PDF

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Publication number
WO2010106841A1
WO2010106841A1 PCT/JP2010/051539 JP2010051539W WO2010106841A1 WO 2010106841 A1 WO2010106841 A1 WO 2010106841A1 JP 2010051539 W JP2010051539 W JP 2010051539W WO 2010106841 A1 WO2010106841 A1 WO 2010106841A1
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layer
algaas layer
algaas
composition ratio
semiconductor laser
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PCT/JP2010/051539
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English (en)
Japanese (ja)
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秋山知之
菅原充
前多泰成
持田励雄
田中有
西研一
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株式会社Ｑｄレーザ
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Publication of WO2010106841A1 publication Critical patent/WO2010106841A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H01S2301/185—Semiconductor lasers with special structural design for influencing the near- or far-field for reduction of Astigmatism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Definitions

  • the present invention relates to a semiconductor laser, and more particularly to a semiconductor laser having a plurality of quantum dots as an active layer.
  • Patent Document 1 and Patent Document 2 disclose methods for forming quantum dots.
  • a lower cladding layer 2 and a quantum dot active layer 3 are stacked on a p-type GaAs substrate 1.
  • An upper clad layer 4 having a convex shape (ridge portion) is provided on the quantum dot active layer 3.
  • the upper cladding layer 4 is formed only on the central portion of the quantum dot active layer 3.
  • Quantum dot lasers use quantum dots to reduce gain. In order to avoid this, it is required to strengthen the light confinement in the active layer. On the other hand, in order to improve the coupling efficiency with the fiber, the laser beam shape is required to be nearly circular.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor laser capable of strengthening light confinement and making a beam shape close to a circle in a quantum dot laser.
  • the present invention has a first conductivity type, a lower cladding layer including a first AlGaAs layer having an Al composition ratio of 0.4 or more, an active layer provided on the lower cladding layer and having a plurality of quantum dots, An upper clad layer provided on the active layer and having a second conductivity type opposite to the first conductivity type and including a second AlGaAs layer having an Al composition ratio of 0.4 or more.
  • This is a semiconductor laser characterized by the above. According to the present invention, light confinement can be strengthened and the beam shape can be made close to a circle.
  • the upper clad layer may include a third AlGaAs layer provided on the second AlGaAs layer and having an Al composition ratio of less than 0.4.
  • the upper cladding layer may be an isolated ridge portion. According to this configuration, the ridge portion can be formed steeply. Therefore, it is possible to suppress higher-order modes and increase the light confinement coefficient of the basic mode.
  • the minimum width of the ridge portion may be a configuration that the second AlGaAs layer has.
  • the said active layer can be set as the structure by which the four dot layers in which the said some quantum dot was provided in the horizontal direction were laminated
  • the Al composition ratio of the first AlGaAs layer and the second AlGaAs layer may be the same. According to this configuration, the beam shape can be made closer to a circle.
  • the lower cladding layer has a fourth AlGaAs layer having an Al composition ratio of 0.2 or more and 0.26 or less, and the first AlGaAs layer is provided on the fourth AlGaAs layer. It can. According to this configuration, it is possible to make the beam shape close to a circle while strengthening light confinement.
  • the first AlGaAs layer may have a thickness of 100 nm to 600 nm. According to this configuration, the beam shape can be made close to a circle.
  • the active layer covers the plurality of quantum dots made of InAs provided in the horizontal direction, the InGaAs layer provided between the plurality of quantum dots, the plurality of quantum dots, and the InGaAs layer. 6 to 8 dot layers composed of a barrier layer made of a GaAs layer provided on the substrate may be stacked. According to this configuration, it is possible to achieve a sufficient gain and suppress deterioration of the surface morphology due to accumulation of distortion.
  • the thickness of the active layer may be 240 nm or more and 300 nm or less.
  • the present invention provides a lower clad having a first conductivity type and including a fourth AlGaAs layer having an Al composition ratio of less than 0.4 and a first AlGaAs layer formed on the fourth AlGaAs layer and having an Al composition ratio of 0.4 or more.
  • An active layer provided on the lower cladding layer and having a plurality of quantum dots; and a second conductivity type provided on the active layer and having a conductivity type opposite to the first conductivity type.
  • a second AlGaAs layer having the same Al composition ratio as the first AlGaAs layer, and an upper cladding layer including a third AlGaAs layer provided on the second AlGaAs layer and having an Al composition ratio the same as the fourth AlGaAs layer.
  • the upper clad layer is an isolated ridge portion, and the minimum width of the ridge portion is included in the second AlGaAs layer.
  • the present invention has a first conductivity type, a fourth AlGaAs layer having an Al composition ratio of 0.2 or more and 0.26 or less, and an Al composition ratio formed on the fourth AlGaAs layer and having a thickness of 0.4 or more.
  • a lower clad layer including a first AlGaAs layer having a thickness of 100 nm to 600 nm, and a plurality of quantum dots made of InAs provided on the lower clad layer and provided in a horizontal direction, and provided between the quantum dots.
  • dot layers composed of an InGaAs layer and a barrier layer made of GaAs provided so as to cover the plurality of quantum dots and the InGaAs layer are stacked, and the thickness is 240 nm or more and 300 nm or less.
  • the second AlGaAs layer and the third AlGaAs layer are isolated ridge portions, and the minimum width of the ridge portion is the second AlGaAs layer, and the fifth AlGaAs layer is on both sides of the ridge portion.
  • This semiconductor laser remains on the active layer.
  • light confinement can be strengthened and the beam shape can be made close to a circle.
  • FIG. 1 is a cross-sectional view of a semiconductor laser according to Comparative Example 1.
  • FIG. 2 is a cross-sectional view of a semiconductor laser according to Comparative Example 2.
  • FIG. 3A and FIG. 3B are diagrams showing the structures of Comparative Example 1 and Comparative Example 2 that have been simulated, respectively.
  • FIG. 4 is a simulation result showing the optical confinement factor of the semiconductor lasers according to Comparative Example 1 and Comparative Example 2 with respect to Wtop.
  • FIG. 5 is a diagram showing the etching rate with respect to the Al composition ratio in the AlGaAs layer.
  • FIG. 6 is a cross-sectional perspective view of the semiconductor laser according to the first embodiment.
  • FIG. 7 is a diagram showing a dot layer for one quantum dot active layer.
  • FIG. 8D are cross-sectional views illustrating the manufacturing steps of the semiconductor laser according to the first embodiment.
  • FIG. 9 is a diagram illustrating the FFP width of Example 1 in which three dot layers are stacked.
  • FIG. 10 is a diagram illustrating the FFP width of Example 1 in which four dot layers are stacked.
  • FIG. 11 is a diagram illustrating the FFP width of Example 1 in which five dot layers are stacked.
  • FIG. 12 is a diagram illustrating the FFP width of Comparative Example 3 in which three dot layers are stacked.
  • FIG. 13 is a diagram illustrating the FFP width of Comparative Example 3 in which four dot layers are stacked.
  • FIG. 14 is a cross-sectional perspective view of the semiconductor laser according to the second embodiment.
  • FIG. 15D are cross-sectional views illustrating the manufacturing steps of the semiconductor laser according to the second embodiment.
  • FIG. 16 is a diagram showing the FFP width of Example 2 with respect to the Al composition ratio of the fourth AlGaAs layer.
  • FIG. 17 is a diagram showing the light confinement factor of Example 2 with respect to the Al composition ratio of the fourth AlGaAs layer.
  • FIG. 18 is a diagram showing the FFP width of Example 2 with respect to the thickness of the first AlGaAs layer.
  • FIG. 19 is a diagram showing the FFP width of Example 2 with respect to the Al composition ratio of the first AlGaAs layer.
  • FIG. 1 is a cross-sectional view of a semiconductor laser according to Comparative Example 1.
  • a lower cladding layer 12 made of p-type Al 0.35 Ga 0.65 As having a thickness of 1400 nm
  • a GaAs quantum dot active layer 14 including a p-type layer having a thickness of 500 nm, a thickness A spacer layer 16 made of undoped GaAs having a thickness of 50 nm, an n-type Al 0.35 Ga 0.65 As having a thickness of 1200 nm, and an upper cladding layer 18 constituting the ridge portion 30 are provided.
  • FIG. 2 is a cross-sectional view of a semiconductor laser according to Comparative Example 2.
  • the upper cladding layer 18 is composed of a second AlGaAs layer 82 made of Al 0.45 Ga 0.55 As with a thickness of 200 nm, and a third AlGaAs layer 83 made of Al 0.35 Ga 0.65 As with a thickness of 1400 nm. ing.
  • FIGS. 3 (a) and 3 (b) are diagrams showing the structures of Comparative Example 1 and Comparative Example 2 that have been simulated.
  • the basic mode M0 and the first higher-order mode M1 the light intensity existing in the region R (the quantum dot active layer 14 below the ridge portion 30) in FIGS.
  • the values normalized by the intensity were set as the light confinement coefficients ⁇ 0 and ⁇ 1 of each mode, respectively.
  • FIG. 4 is a simulation result showing the optical confinement coefficients ⁇ 0 and ⁇ 1 of the semiconductor lasers according to Comparative Example 1 and Comparative Example 2 with respect to Wtop.
  • White circles are the simulation results of Comparative Example 1
  • black circles are the simulation results of Comparative Example 2.
  • the broken line and the solid line are approximate lines connecting the simulation results of Comparative Example 1 and Comparative Example 2, respectively.
  • the optical confinement coefficient ⁇ 1 of the first higher-order mode M1 is 0.2 to 0.4.
  • the light confinement coefficient ⁇ 1 is 0.2 or less, and particularly when Wtop is 2.0 ⁇ m or less, ⁇ 1 is almost 0. Furthermore, ⁇ 1 is almost 0 when Wtop is 1.8 ⁇ m or less.
  • ⁇ 1 can be made substantially zero by optimizing Wtop.
  • the comparative example 2 is larger than the comparative example 1 in the light confinement coefficient ⁇ 0 of the basic mode M0.
  • the comparative example 2 can suppress higher-order modes in the region R, and can increase the intensity of the fundamental mode in the region R.
  • the width Wtop of the upper surface of the ridge portion 30 is made the same as or larger than the width Wbot of the lower surface, it is possible to suppress the mixing of higher-order modes into the oscillation light, and the intensity of the fundamental mode in the region R Can be increased.
  • Wtop can be increased in a state where mixing of higher-order modes into the oscillation light is suppressed, the contact resistance between the upper cladding layer 18 and the n electrode 22 can be reduced.
  • the width Wtop of the upper surface of the ridge 30 is equal to or larger than the width Wbot of the lower surface, for example, it is conceivable to form the ridge 30 by dry etching. However, damage is formed in the quantum dot active layer 14. Thus, it is not easy to form a structure in which the width Wtop is equal to or larger than the width Wbot.
  • the side shape of the upper cladding layer 18 can be made steep by dry etching the third AlGaAs layer 83 and wet etching the second AlGaAs layer 82. Therefore, mixing of higher-order modes into the oscillation light can be suppressed, and the contact resistance between the upper cladding layer 18 and the n electrode 22 can be reduced. At this time, since the second AlGaAs layer 82 is wet-etched, over-etching of the quantum dot active layer 14 can be suppressed.
  • the Al composition ratio of the second AlGaAs layer 82 is set to 0.4 or more.
  • FIG. 5 is a diagram showing the relationship between the Al composition ratio and the etching rate when the AlGaAs layer is wet etched using concentrated hydrofluoric acid (47%).
  • the Al composition ratio exceeds 0.4, the etching rate of the AlGaAs layer increases rapidly. Even when other etchants are used, the etching rate of wet etching increases rapidly when the Al composition ratio exceeds 0.4.
  • the second AlGaAs layer 82 can be selectively etched with respect to the third AlGaAs layer 83 by wet etching the second AlGaAs layer 82 using, for example, concentrated hydrofluoric acid or a hydrofluoric acid aqueous solution. In this way, the second AlGaAs layer 82 can have the minimum width of the ridge portion 30.
  • Quantum dot lasers are required to have strong light confinement due to the small gain of quantum dots. Therefore, when the thickness of the quantum dot active layer 14 is increased in order to strengthen the vertical light confinement, the beam shape becomes an elliptical shape spreading in the vertical direction. Therefore, in order to strengthen the light confinement and make the beam shape isotropic, the thickness of the quantum dot active layer 14 is decreased to weaken the light confinement in the vertical direction, and the width Wtop of the ridge portion 30 is decreased. It is conceivable to increase the light confinement in the horizontal direction.
  • Comparative Example 2 it was found that since the refractive index of the second AlGaAs layer 82 was small, the beam expanded downward, making it difficult to achieve both light confinement and beam shape. Examples for solving the above problems will be described below.
  • FIG. 6 is a cross-sectional perspective view of the first embodiment.
  • a buffer layer 11 made of p-type GaAs
  • a lower cladding layer 12 made of p-type AlGaAs
  • a spacer layer 15 made of undoped GaAs
  • a quantum dot active layer 14 in which four quantum dots are stacked an undoped GaAs
  • a spacer layer 16 made of, an upper clad layer 18 and a contact layer 19 made of n-type GaAs are sequentially laminated.
  • the lower cladding layer 12 includes a fourth AlGaAs layer 84 having an Al composition ratio of 0.35 and a first AlGaAs layer 81 having an Al composition ratio of 0.45, and the upper cladding layer 18 includes a second AlGaAs layer 82 having an Al composition ratio of 0.45. And a third AlGaAs layer 83 having an Al composition ratio of 0.35.
  • Table 1 shows the material, film thickness, and doping concentration of each layer.
  • the upper cladding layer 18 and the contact layer 19 form a ridge portion 30. Concave portions 35 reaching the spacer layer 16 are formed on both sides of the ridge portion 30.
  • a silicon oxide film is formed as a protective film 28 on the contact layer 19 and on the surface of the recess 35.
  • An n electrode 22 is formed on the contact layer 19 of the ridge 30.
  • a pad 26 connected to the n electrode 22 via the wiring 25 is formed.
  • a p-electrode 24 is formed on the lower surface of the substrate 10.
  • FIG. 7 is a diagram showing a dot layer 40 for one quantum dot active layer.
  • the quantum dots 41 are made of InAs.
  • An InGaAs layer 42 having a thickness of about 5 nm is formed between the quantum dots 41.
  • An undoped GaAs layer 43 having a thickness of about 14 nm is formed so as to cover the quantum dots 41 and the InGaAs layer 42.
  • a p-type GaAs layer 44 having a thickness of about 10 nm and an undoped GaAs layer 45 having a thickness of 9 nm are formed on the undoped GaAs layer 43.
  • the undoped GaAs layer 43, the p-type GaAs layer 44, and the undoped GaAs layer 45 constitute a barrier layer 46.
  • Table 2 shows the material, film thickness, and doping concentration of each layer in the quantum dot active layer 14.
  • FIG. 8A to FIG. 8D are cross-sectional views illustrating the steps of manufacturing the semiconductor laser according to the first embodiment.
  • a buffer layer 11 for example, using MBE (Molecular Beam Epitaxy) method, a buffer layer 11, a lower cladding layer 12, a quantum dot active layer 14 having a plurality of quantum dots, an upper portion
  • the clad layer 18 is sequentially laminated.
  • a photoresist 32 is formed on the upper clad layer 18.
  • the upper cladding layer 18 is anisotropically etched using a dry etching method so as to reach the second AlGaAs layer 82 using the photoresist 32 as a mask. At this time, the side surface of the upper cladding layer 18 is substantially vertical.
  • the second AlGaAs layer 82 of the upper cladding layer 18 is etched by wet etching.
  • the etching rate of the second AlGaAs layer 82 is faster than that of the quantum dot active layer 14 and the third AlGaAs layer 83.
  • the second AlGaAs layer 82 and the side surface are etched, and the ridge portion 30 is formed.
  • the upper cladding layer 18 having the ridge portion 30 is formed on the quantum dot active layer 14. Since the etching rate of the first AlGaAs layer 81 is fast, the constriction 85 of the ridge portion 30 is formed in the first AlGaAs layer 81.
  • the photoresist 32 is removed.
  • an n electrode 22 is formed on the upper clad layer 18 and a p electrode 24 is formed under the p-type substrate 10. Thereby, the semiconductor laser according to Example 1 is completed.
  • FIG. 10 and FIG. 11 are simulation results showing the beam shape of the semiconductor laser according to the first embodiment.
  • FIG. 10 and FIG. 11 are diagrams showing FFP (Far Field Pattern) widths when the dot layers 40 are stacked in three layers, four layers and five layers, respectively.
  • FFP Field Pattern
  • the horizontal FFP width and the vertical FFP width are substantially the same. That is, the beam shape is close to a circle.
  • the light confinement factor is about 0.35.
  • the vertical FFP width is larger than the horizontal FFP width. This is because the refractive index of the second AlGaAs layer 82 is small, so that the beam spreads downward.
  • Example 1 with three dot layers 40 as in Comparative Example 3, the horizontal FFP width and the vertical FFP width are substantially the same, and the light confinement coefficient is 0. As small as 3 or so.
  • the FFP width in the horizontal direction and the FFP width in the vertical direction are substantially the same, and the light confinement coefficient is as large as about 0.4.
  • the light confinement factor is as large as about 0.5, but the FFP width in the vertical direction is larger than the FFP width in the horizontal direction.
  • Example 1 compared with Comparative Example 3, the light confinement factor is large and the beam shape can be made close to a circle. As a result, the gain can be increased and the coupling coefficient with the fiber can be increased.
  • the lower cladding layer 12 includes a first AlGaAs layer 81 having an Al composition ratio of 0.4 or more.
  • the upper cladding layer 18 includes a second AlGaAs layer having an Al composition ratio of 0.4 or more. Thereby, light confinement can be strengthened and the beam shape can be made close to a circle.
  • the upper cladding layer 18 preferably has a third AlGaAs layer 83 provided on the second AlGaAs layer 82 and having an Al composition ratio of less than 0.4. Further, the upper cladding layer 18 is preferably an isolated ridge portion 30. As a result, the ridge portion 30 can be formed steeply as shown in FIG. Therefore, as shown in FIG. 4, the higher-order mode can be suppressed and the light confinement coefficient of the fundamental mode can be increased.
  • the lower clad layer 12 is symmetrical with the upper clad layer 18 in order to make the beam shape circular. Therefore, the lower cladding layer 12 preferably includes a fourth AlGaAs layer 84 having an Al composition ratio of less than 0.4 below the first AlGaAs layer 81.
  • the second AlGaAs layer 82 has the minimum width W3 of the ridge portion 30.
  • the quantum dot active layer 14 preferably has a structure in which four dot layers 40 each having a plurality of quantum dots 41 in the horizontal direction are stacked. Thereby, as shown in FIG. 10, the light confinement coefficient is large and the beam shape can be made close to a circle.
  • the Al composition ratio of the second AlGaAs layer 82 is more preferably 0.45 or more for the purpose of increasing the wet etching rate. From the viewpoint of reducing the vertical resistance of the second AlGaAs layer 82, 0.6 or less is preferable, and 0.5 or less is more preferable.
  • the Al composition ratio of the first AlGaAs layer 81 is preferably substantially the same as the Al composition ratio of the second AlGaAs layer 82 from the viewpoint of suppressing the downward beam. That is, when the Al composition ratio of the second AlGaAs layer 82 is 0.4 or more, the Al composition ratio of the first AlGaAs layer 81 is also preferably 0.4 or more, and the Al composition ratio of the second AlGaAs layer 82 is 0.45 or more. In this case, the Al composition ratio of the first AlGaAs layer 81 is also preferably 0.45 or more. Further, from the viewpoint of reducing the longitudinal resistance of the first AlGaAs layer 81, 0.6 or less is preferable, and 0.5 or less is more preferable.
  • the Al composition ratio of the third AlGaAs layer 83 is more preferably 0.35 or less from the viewpoint of slowing the wet etching rate. From the viewpoint of functioning as a cladding layer, 0.2 or more is preferable, and 0.3 or more is more preferable.
  • the Al composition ratio of the fourth AlGaAs layer 84 is more preferably 0.35 or less in order to make the lower cladding layer 12 symmetrical with the upper cladding layer 18. From the viewpoint of functioning as a cladding layer, 0.2 or more is preferable, and 0.3 or more is more preferable.
  • the Al composition ratio between the third AlGaAs layer 83 and the fourth AlGaAs layer 84 is preferably substantially the same.
  • the first AlGaAs layer 82 and the second AlGaAs layer 82 are mixed crystals of GaAs and AlAs, but contain other elements such as In as long as the Al composition ratio is 0.4 or more and the wet etching rate tends to increase. May be.
  • the third AlGaAs layer 83 and the fourth AlGaAs layer 84 are mixed crystals of GaAs and AlAs, but other elements such as In are used within a range where the Al composition ratio is less than 0.4 and the wet etching rate tends to be low. May be included.
  • the first conductivity type is n-type and the second conductivity type is p-type.
  • the first conductivity type may be p-type and the second conductivity type may be n-type.
  • FIG. 14 is a cross-sectional perspective view of the second embodiment.
  • a buffer layer 102 made of n-type GaAs
  • a lower cladding layer 104 made of n-type AlGaAs
  • a spacer layer 106 made of undoped GaAs
  • a quantum dot active layer 108 in which 6 to 8 quantum dots are stacked.
  • a spacer layer 110 made of undoped GaAs, an upper cladding layer 112 made of p-type AlGaAs, and a contact layer 114 made of p-type GaAs are sequentially stacked.
  • the lower cladding layer 104 includes a fourth AlGaAs layer 116 and a first AlGaAs layer 118.
  • the Al composition ratio of the fourth AlGaAs layer 116 differs depending on the number of quantum dot active layers 108. When the number of quantum dot active layers 108 is 6, the Al composition ratio is 0.25, and 7 layers is 0.23. , 8 layers are 0.21. Thus, the reason why the Al composition ratio of the fourth AlGaAs layer is changed depending on the number of the quantum dot active layers 108 is that the Al composition ratio at which the fundamental mode does not occur differs depending on the number of layers, as will be described later.
  • the first AlGaAs layer 118 includes an n-type Al 0.4 Ga 0.6 As layer and an n-type Al 0.45 Ga 0.55 As layer having an Al composition ratio of 0.4 or more.
  • the upper cladding layer 112 includes a fifth AlGaAs layer 120, a second AlGaAs layer 122, and a third AlGaAs layer 124.
  • the Al composition ratio of the fifth AlGaAs layer 120 is 0.35
  • the Al composition ratio of the second AlGaAs layer 122 is 0.45
  • the Al composition ratio of the third AlGaAs layer 124 is 0.35.
  • the second AlGaAs layer 122 and the third AlGaAs layer 124 among the three layers constituting the upper clad layer 112 form a ridge portion 126 together with the contact layer 114.
  • the cross-sectional shape of the ridge portion 126 is rectangular. Concave portions 128 are formed on both sides of the ridge portion 126.
  • the fifth AlGaAs layer 120 remains on both sides of the ridge portion 126.
  • a silicon oxide film is formed as a protective film 130 on the contact layer 114 and on the surface of the recess 128.
  • a p-type electrode 132 is formed on the contact layer 114 of the ridge portion 126.
  • a pad 134 connected via the p-electrode 132 and the wiring 133 is formed.
  • An n electrode 136 is formed on the lower surface of the substrate 100.
  • Table 4 shows the material, film thickness, and doping concentration of each layer constituting the dot layer 40 that is one layer of the quantum dot active layer 108. Since the configuration diagram of the dot layer 40 is the same as the diagram shown in FIG. 7, it will be described with reference to FIG.
  • the quantum dots 41 are formed of 0.8 nm thick InAs.
  • An InGaAs layer 42 having a thickness of 3.6 nm is formed between the quantum dots 41.
  • An undoped GaAs layer 43 having a thickness of 14.4 nm is formed so as to cover the quantum dots 41 and the InGaAs layer 42.
  • a p-type GaAs layer 44 having a thickness of 10 nm and an undoped GaAs layer 45 having a thickness of 12 nm are sequentially formed on the undoped GaAs layer 43.
  • the undoped GaAs layer 43, the p-type GaAs layer 44, and the undoped GaAs layer 45 constitute a barrier layer 46.
  • a buffer layer 102, a lower cladding layer 104, a spacer layer 106, a quantum dot active layer 108 having a plurality of quantum dots, a spacer layer are formed on an n-type semiconductor substrate 100 using, for example, the MBE method.
  • 110, an upper cladding layer 112, and a contact layer 114 are sequentially deposited and formed.
  • a photoresist 138 is formed on the contact layer 114.
  • the upper cladding layer 112 and the contact layer 114 are anisotropically etched using a dry etching method so as to reach the second AlGaAs layer 122.
  • the side surfaces of the upper cladding layer 112 and the contact layer 114 are substantially vertical.
  • the second AlGaAs layer 122 of the upper cladding layer 112 is etched using a wet etching method. Since the Al composition ratio of the second AlGaAs layer 122 is 0.45 and the Al composition ratio of the fifth AlGaAs layer 120 and the third AlGaAs layer 124 is 0.35, the etching of the second AlGaAs layer 122 is performed as described with reference to FIG. The rate is faster than that of the fifth AlGaAs layer 120 and the third AlGaAs layer 124. That is, the second AlGaAs layer 122 can be selectively etched with respect to the fifth AlGaAs layer 120 and the third AlGaAs layer 124.
  • a ridge portion 126 is formed by the second AlGaAs layer 122 and the third AlGaAs layer 124, and the fifth AlGaAs layer 120 remains on the quantum dot active layer 108 in the recesses 128 on both sides of the ridge portion 126. Further, since the etching rate of the second AlGaAs layer 122 is faster than that of the third AlGaAs layer 124, the constriction 140 of the ridge portion 126 is formed in the second AlGaAs layer 122.
  • a p-type electrode 132 is formed on the contact layer 114, and an n-type electrode 136 is formed on the lower surface of the n-type substrate 100. Thereby, the semiconductor laser according to Example 2 is completed.
  • FIG. 16 is a simulation result showing the FFP (Far Field Pattern) full width at half maximum with respect to the Al composition ratio of the fourth AlGaAs layer 116 in the semiconductor laser according to the second embodiment.
  • the quantum dot active layer 108 is 6 layers (indicated by a one-dot chain line), 7 layers (indicated by a two-dot chain line), and 8 layers (indicated by a solid line)
  • the Al composition ratio of the third AlGaAs layer 124 is 0.35
  • Simulations were performed for the cases of 0.3 and 0.25.
  • the materials and film thicknesses of the respective layers shown in Tables 3 and 4 were used except for the Al composition ratio of the fourth AlGaAs layer 116 and the Al composition ratio of the third AlGaAs layer 124.
  • black circles, black triangles, and black squares indicate the full width at half maximum of the FFP in the vertical direction (that is, the stacking direction of each layer), and the black circle indicates the Al composition ratio of the third AlGaAs layer 124 is 0.35, and the black triangle indicates 0. .3, black squares are simulation results for 0.25.
  • White circles, white triangles, and white squares indicate the full width at half maximum of the FFP in the horizontal direction (that is, the direction parallel to the substrate 100).
  • White circles indicate the Al composition ratio of the third AlGaAs layer 124, 0.35, white triangles indicate 0.3, white Squares are simulation results for the case of 0.25.
  • the simulation was performed for the case where the quantum dot active layer 108 has 6 to 8 layers.
  • the quantum dot active layer 108 is preferably 6 layers or more in order to realize a sufficient gain, and the quantum dot active layer 108 As the number of layers increases, the maximum gain can be increased. However, when the number of layers is 9 or more, the surface morphology is likely to be deteriorated due to accumulation of strain, so that 8 layers or less is preferable.
  • the full width at half maximum increases in both the vertical FFP and the horizontal FFP as the Al composition ratio of the fourth AlGaAs layer 116 decreases. Get smaller.
  • the decrease rate of the full width at half maximum is larger than that in the horizontal direction FFP, and as the Al composition ratio decreases, the difference in full width at half maximum between the vertical direction FFP and the horizontal direction FFP decreases. Get closer to. This is presumably because the smaller the Al composition ratio of the fourth AlGaAs layer 116, the more the elongation in the vertical direction of NFP (Near Field Field Pattern) is promoted.
  • the Al composition ratio of the fourth AlGaAs layer 116 is less than 0.23 when the number of quantum dot active layers 108 is 6, the Al of the fourth AlGaAs layer 116 when the number of quantum dot active layers 108 is seven.
  • the composition ratio is less than 0.22, the fundamental mode does not occur when the Al composition ratio of the fourth AlGaAs layer 116 in which the number of the quantum dot active layers 108 is eight is less than 0.2. Is not shown.
  • the Al composition ratio of the fourth AlGaAs layer 116 may be 0.24 or more and 0.26 or less when the quantum dot active layer 108 is six layers.
  • the case of 0.25 is more preferable.
  • the case of 0.22 or more and 0.24 or less is preferable, and the case of 0.23 is more preferable.
  • the case of 0.2 or more and 0.22 or less is preferable, and the case of 0.21 is more preferable.
  • the Al composition ratio of the fourth AlGaAs layer 116 is 0.2 or more and 0.26 or less.
  • the case is preferable, and the case of 0.21 or more and 0.25 or less is more preferable.
  • FIG. 17 is a simulation result showing the optical confinement coefficient with respect to the Al composition ratio of the fourth AlGaAs layer 116 in the semiconductor laser according to Example 2.
  • the simulation was performed for the ratios of 0.35 (circle), 0.3 (triangle), and 0.25 (square).
  • the materials and film thicknesses of the respective layers shown in Tables 3 and 4 were used except for the Al composition ratio of the fourth AlGaAs layer 116 and the Al composition ratio of the third AlGaAs layer 124.
  • the Al composition ratio of the fourth AlGaAs layer 116 is less than 0.23 when the number of quantum dot active layers 108 is 6, the number of quantum dot active layers 108 is 7
  • the fundamental mode occurs when the Al composition ratio of the fourth AlGaAs layer 116 is less than 0.2 when the number of quantum dot active layers 108 is eight.
  • the light confinement factor is not shown because it disappears.
  • the optical confinement factor of the fundamental mode tends to decrease as the Al composition ratio of the fourth AlGaAs layer 116 decreases in any of the quantum dot active layers 108 in the case of 6, 7, or 8 layers. is there.
  • FIG. 18 is a simulation result showing the FFP full width at half maximum with respect to the film thickness of the first AlGaAs layer 118 in the semiconductor laser according to Example 2.
  • the simulation was performed assuming that the first AlGaAs layer 118 is a single layer of Al 0.45 Ga 0.55 As, and the materials and film thicknesses shown in Tables 3 and 4 were used for the other layers.
  • the black circles in FIG. 18 indicate the FFP full width at half maximum in the vertical direction
  • the white circles indicate the FFP full width at half maximum in the horizontal direction
  • the one-dot chain line indicates six quantum dot active layers 108
  • the two-dot chain line indicates seven layers. Indicates the case of 8 layers.
  • the full width at half maximum of the vertical FFP takes a minimum value when the thickness of the first AlGaAs layer 118 is about 300 nm when the quantum dot active layer 108 is eight layers, and is about 400 nm when the thickness is seven layers. In the case of (6), the minimum value is taken.
  • the full width at half maximum in the horizontal direction FFP tends to slightly increase as the film thickness of the first AlGaAs layer 118 increases regardless of whether the quantum dot active layer 108 has six layers, seven layers, or eight layers. Therefore, when the full width at half maximum of the vertical FFP takes a minimum value, the difference in full width at half maximum between the vertical FFP and the horizontal FFP becomes small, and the shape of the FFP approaches a circular shape.
  • the film thickness of the first AlGaAs layer 118 is preferably 200 nm or more and 400 nm or less, and 250 nm or more and 350 nm or less when the quantum dot active layer 108 is eight layers. More preferably, the case of 300 nm is even more preferable. In the case of 7 layers, the case of 300 nm or more and 500 nm or less is preferable, 350 nm or more and 450 nm or less are more preferable, and the case where it is 400 nm is further more preferable.
  • the case is preferably 400 nm or more and 600 nm or less, more preferably 450 nm or more and 550 nm or less, and even more preferably 500 nm. That is, for the purpose of bringing the FFP shape closer to a circular shape, when the number of quantum dot active layers 108 is 6 to 8, the thickness of the first AlGaAs layer 118 is preferably 200 nm or more and 600 nm or less, and 250 nm.
  • the case of 550 nm or more is more preferable, and the case of 300 nm or more and 500 nm or less is more preferable.
  • the full width at half maximum of the vertical FFP is about the same when the thickness of the first AlGaAs layer 118 is 0 nm and when it is 600 nm. Further, as described above, when the minimum value of the full width at half maximum in the vertical direction FFP is taken, the film thickness of the first AlGaAs layer 118 is 300 nm when the number of layers is 8, 400 nm when the number of layers is 7, and 6 layers. 500 nm. Therefore, for the purpose of reducing the full width at half maximum in the vertical direction FFP, when the number of the quantum dot active layers 108 is 6 to 8, the thickness of the first AlGaAs layer 118 is preferably 100 nm to 500 nm. The case of 150 nm or more and 450 nm or less is more preferable, and the case of 200 nm or more and 400 nm or less is more preferable.
  • the thickness of the first AlGaAs layer 118 is preferably 100 nm or more and 600 nm or less for the purpose of bringing the FFP shape closer to a circular shape or reducing the full width at half maximum of the vertical FFP.
  • the thickness of the first AlGaAs layer 118 is preferably 200 nm to 500 nm, and is preferably 250 nm to 450 nm. Is more preferable, and the case of 300 nm or more and 400 nm or less is still more preferable.
  • FIG. 19 is a simulation result showing the FFP full width at half maximum with respect to the Al composition ratio of the first AlGaAs layer 118 in the semiconductor laser according to the second embodiment.
  • the simulation is performed assuming that the first AlGaAs layer 118 is a single layer of Al X Ga 1-X As and has a film thickness of 300 nm.
  • the materials and film thicknesses shown in Table 3 and Table 4 are used. It was.
  • the black circles in FIG. 19 indicate the FFP full width at half maximum in the vertical direction
  • the white circles indicate the FFP full width at half maximum in the horizontal direction
  • the one-dot chain line indicates six quantum dot active layers 108
  • the two-dot chain line indicates seven layers. Indicates the case of 8 layers.
  • the vertical FFP decreases as the Al composition ratio of the first AlGaAs layer 118 increases, and the Al composition ratio decreases. Near 0.5, the difference between the vertical FFP and the horizontal FFP becomes smaller, and the FFP shape approaches a circular shape.
  • the Al composition ratio of the first AlGaAs layer 118 is large, but considering that the resistance of the first AlGaAs layer 118 is increased, 0.6 is considered. The following is preferable, and 0.5 or less is more preferable.
  • the Al composition ratio of the first AlGaAs layer 118 is preferably 0.45 or more and 0.55 or less, more preferably 0.47 or more and 0.52 or less, and 0 The case of .5 is more preferable.
  • the lower cladding layer 104 has the Al composition ratio of 0 to 0.26 and the Al composition ratio provided on the fourth AlGaAs layer 116 of 0 to 0.26. 4 or more first AlGaAs layers 118.
  • the upper cladding layer 112 includes a second AlGaAs layer 122 having an Al composition ratio of 0.4 or more and a third AlGaAs layer 124 having an Al composition ratio of less than 0.4 provided on the second AlGaAs layer 122.
  • the third AlGaAs layer 124 is removed by dry etching, and as shown in FIG. 15C, the second AlGaAs layer 122 is removed by wet etching.
  • the rectangular ridge 126 can be formed without damaging the fifth AlGaAs layer 120, and the fifth AlGaAs layer 120 can be left on the quantum dot active layer.
  • the Al composition ratio of the second AlGaAs layer 122 is more preferably 0.45 or more for the purpose of increasing the wet etching rate.
  • 0.6 or less is preferable, and 0.5 or less is more preferable.
  • the Al composition ratio of the fifth AlGaAs layer 120 and the third AlGaAs layer 124 is more preferably 0.35 or less for the purpose of slowing the etching rate. From the viewpoint of functioning as a cladding layer, 0.2 or more is preferable, and 0.3 or more is more preferable.
  • a constriction 140 is formed as shown in FIG. 15C, and the minimum width of the ridge portion 126 has the second AlGaAs layer 122. It will be.
  • the quantum dot active layer 108 includes the horizontally provided InAs quantum dots 41, the InGaAs layer 42 provided between the quantum dots 41, the quantum dots 41, and the InGaAs layers.
  • a dot layer 40 composed of a barrier layer 46 covering 42 is laminated.
  • the number of the dot layers 40 is preferably 6 to 8 from the viewpoint of realizing a sufficient gain and suppressing deterioration of the surface morphology due to accumulation of distortion.
  • the thickness of the quantum dot active layer 108 is preferably 240 nm or more and 300 nm or less, and more preferably 260 nm or more and 280 nm or less.
  • the first conductivity type is n-type and the second conductivity type is p-type.
  • the first conductivity type may be p-type and the second conductivity type may be n-type.
  • the first AlGaAs layer 118 is illustrated as an example in which a plurality of AlGaAs layers having an Al composition ratio of 0.4 or more are provided, but may be a single layer.

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Abstract

L'invention concerne un laser à semi-conducteur comprenant : une couche de placage inférieure (12) présentant un premier type de conductivité et comprenant une première couche AlGaAs (81) ayant un taux de composition en Al supérieure ou égale à 0,4 ; une couche active (14) placée sur la couche de placage inférieure (12) et présentant une pluralité de points quantiques ; et une couche de placage supérieure (18) placée sur la couche active (14), présentant un second type de conductivité qui est un type de conductivité différent du premier type de conductivité, et comprenant une seconde couche AlGaAs ayant un taux de composition en Al supérieure ou égale à 0,4.
PCT/JP2010/051539 2009-03-17 2010-02-03 Laser à semi-conducteur WO2010106841A1 (fr)

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GB2529594B (en) 2013-06-05 2018-09-05 Nitto Optical Co Ltd Light emittng device including an active region containing nanodots in a zinc-blende type crystal

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274513A (ja) * 1999-09-27 2001-10-05 Sanyo Electric Co Ltd 半導体レーザ素子及びその製造方法
JP2006286902A (ja) * 2005-03-31 2006-10-19 Fujitsu Ltd 半導体レーザ及びその製造方法
JP2009016710A (ja) * 2007-07-09 2009-01-22 National Institute For Materials Science レーザ発振素子
WO2009011184A1 (fr) * 2007-07-17 2009-01-22 Qd Laser Inc. Laser semi-conducteur et son procédé de fabrication

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274513A (ja) * 1999-09-27 2001-10-05 Sanyo Electric Co Ltd 半導体レーザ素子及びその製造方法
JP2006286902A (ja) * 2005-03-31 2006-10-19 Fujitsu Ltd 半導体レーザ及びその製造方法
JP2009016710A (ja) * 2007-07-09 2009-01-22 National Institute For Materials Science レーザ発振素子
WO2009011184A1 (fr) * 2007-07-17 2009-01-22 Qd Laser Inc. Laser semi-conducteur et son procédé de fabrication

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