WO2010103914A1 - Film mince d'oxyde de tantale et stratifié à films minces - Google Patents

Film mince d'oxyde de tantale et stratifié à films minces Download PDF

Info

Publication number
WO2010103914A1
WO2010103914A1 PCT/JP2010/052706 JP2010052706W WO2010103914A1 WO 2010103914 A1 WO2010103914 A1 WO 2010103914A1 JP 2010052706 W JP2010052706 W JP 2010052706W WO 2010103914 A1 WO2010103914 A1 WO 2010103914A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
oxide thin
tantalum oxide
glass
film
Prior art date
Application number
PCT/JP2010/052706
Other languages
English (en)
Japanese (ja)
Inventor
徹 蘆田
和広 加藤
英雄 大本
Original Assignee
セントラル硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by セントラル硝子株式会社 filed Critical セントラル硝子株式会社
Publication of WO2010103914A1 publication Critical patent/WO2010103914A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/218—V2O5, Nb2O5, Ta2O5
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/154—Deposition methods from the vapour phase by sputtering
    • C03C2218/155—Deposition methods from the vapour phase by sputtering by reactive sputtering

Definitions

  • the present invention relates to an amorphous tantalum oxide thin film formed on a substrate through a sputtering method.
  • a metal oxide thin film mainly composed of a metal oxide such as zinc oxide, tin oxide, titanium oxide, or indium oxide is a low-emission laminated body (for example, Patent Document 1) as a thin film laminated body laminated with a metal thin film. ), An optical filter, or a thin film laminated body in which different metal oxide thin films are laminated with each other, an electrochromic (hereinafter sometimes referred to as EC) film (for example, Patent Document 2) is used.
  • EC electrochromic
  • the stress generated in the thin film includes a thermal stress generated due to a difference in thermal expansion coefficient between the thin film and the substrate material, and an internal stress generated in a process in which the ratio between the substrate temperature and the melting point of the film material is small.
  • an object of the present invention is to provide a metal oxide thin film with low internal stress.
  • an amorphous tantalum oxide thin film is a promising candidate for obtaining a thin film with low internal stress.
  • the amorphous tantalum oxide thin film of the present invention is an amorphous tantalum oxide thin film formed on a transparent substrate by a sputtering method.
  • the theoretical density of the tantalum oxide thin film is ⁇ 0 and the measured density is ⁇ (The value represented by ⁇ / ⁇ 0 ) ⁇ 100 (hereinafter sometimes referred to as “densification degree”) is 75 to 95%.
  • the theoretical density ⁇ 0 of the tantalum oxide thin film is 8.3 g / cm 3 (the value listed in JCPDS (Joint Committee for Power Diffraction Standards) card number 54-0514 is adopted), and the measured density ⁇ is the X-ray reflectivity method. It is obtained by measuring the critical angle with and analyzing it.
  • the density measurement by the X-ray reflectance method is introduced in detail in Non-Patent Document 1, and can be derived by a general-purpose analysis program attached to the XRD measurement apparatus (RINT-UltimaIII manufactured by Rigaku).
  • the tantalum oxide thin film of the present invention was amorphous, the value of the crystal was adopted as the theoretical density ⁇ 0 in the above formula for obtaining the degree of densification.
  • the degree of densification becomes less than 100% when the crystallinity deteriorates, and a further decrease in value is observed in the amorphous state. Therefore, in order to obtain an index representing the degree of densification of the amorphous thin film, the crystal value may be adopted as the theoretical density ⁇ 0 .
  • “on the substrate” may be one in which the tantalum oxide thin film is in contact with the substrate, or another thin film interposed between the substrate and the tantalum oxide thin film.
  • the degree of densification is 75% to 95%, preferably 77% to 91%.
  • the degree of densification exceeds 95%, the internal stress cannot be said to be sufficiently reduced. Further, if the densification degree is too low, such as less than 75%, the film strength may be lowered.
  • the tantalum oxide thin film having a low degree of densification tended to have a lower refractive index than that having a high degree of densification.
  • a thin film with a low refractive index may reduce the glare of the thin film and improve the transmittance. Therefore, a tantalum oxide thin film with a low refractive index is a preferred form in the present invention. It can be said that there is.
  • the tantalum oxide thin film of the present invention preferably has a refractive index at a wavelength of 550 nm of 2.05 or less, and most preferably 2.00 or less.
  • the refractive index of the tantalum oxide thin film exceeds 2.05, the thin film may have a structure in which the degree of densification increases and the internal stress increases.
  • the lower limit of the refractive index is not particularly limited, but the refractive index has a correlation with the degree of densification, and when trying to obtain a low refractive index, the degree of densification is lowered and the film strength of the thin film is weakened. Sometimes. Therefore, the lower limit of the refractive index may be set to 1.90, preferably 1.95.
  • the amorphous tantalum oxide thin film of the present invention has a low internal stress, the adhesion with the substrate is improved, and the peeling of the film itself and the occurrence of warping of the substrate are suppressed. Moreover, when the tantalum oxide thin film and another metal thin film are laminated
  • a glass substrate is preferably used for the transparent substrate (having transparency to visible light).
  • glass substrates include windows and mirrors for buildings and vehicles, float glass made of soda lime silicate glass used for displays, or soda lime silicate manufactured by the roll-out method.
  • plate glass having inorganic transparency such as salt glass and alkali-free glass.
  • the shape of the substrate is not limited to a flat plate or a bent plate, and in addition to various tempered glass such as air-cooled tempered glass and chemically tempered glass. Knitted glass can also be used.
  • various glass substrates such as borosilicate glass, low expansion glass, zero expansion glass, low expansion crystallized glass, zero expansion crystallized glass, TFT glass, PDP glass, and optical film substrate glass should be used. Can do.
  • inexpensive float glass such as polyethylene terephthalate resin, polycarbonate and high-transmission glass is suitable, but besides transparent glass, transparent resin substrate or film such as polycarbonate or polyethylene terephthalate. Etc. may be used.
  • the amorphous tantalum oxide thin film according to the present invention is preferably formed using a sputtering method.
  • a sputtering method known sputtering methods such as DC sputtering, RF sputtering, pulse sputtering, counter sputtering, and dual sputtering methods can be applied.
  • the tantalum oxide thin film having a densification degree of 95% or less can be obtained by adjusting the atmospheric gas during film formation. Further, when it is desired to reduce the densification degree more than the above, for example, O 2 and CO 2 It is also preferable to use the mixed gas because it can be easily reduced. When the mixed gas is used, particularly when the CO 2 flow ratio represented by the formula CO 2 / (O 2 + CO 2 ) ⁇ 100 is 20% by volume or more, the degree of densification is reduced to less than 90%. Is preferable.
  • the upper limit of the pressure of the atmospheric gas during film formation is preferably 1.0 Pa, and the lower limit is not particularly limited, It may be set to 0.1 Pa.
  • the thin film laminate having the thin film and a metal film layer such as silver is preferably used as a low emission laminate.
  • the Articles composed of a transparent base material and a thin film laminate formed on the transparent base material have a heat shielding property to prevent solar heat from flowing into the room in a building, or heat insulation to prevent the indoor temperature from flowing out of the room It is used as a window glass with added properties.
  • a window glass When used as a window glass, it is a multi-layer glass that is provided with heat-shielding properties by being constructed in the order of a glass with a low emission laminate, a dry air layer, and a transparent glass, or a surface that is installed outdoors. From the above, it is preferable to use as a double-glazed glass provided with heat insulation by constituting in order of a transparent glass, a dry air layer, and a glass with a low radiation laminate, and the glass with a low radiation laminate is a surface in contact with the dry air layer It is preferable to form a low emission laminate.
  • a thin film laminate including the thin film, an anode layer such as tungsten oxide, and a cathode layer such as iridium oxide is used as an EC layer.
  • An article in which a transparent base material and a transparent conductive film and an EC layer are sequentially laminated on the transparent base material are reversible by applying a current voltage to the article, or the color of the EC layer itself. It is preferable to be used as an all-solid-state EC element capable of changing. Specifically, for example, it is preferably used as an EC mirror for vehicles or home, an EC display device, a light control glass for vehicle or home window glass, and the like.
  • the substrate with a thin film laminate described above may be incorporated into articles such as double-glazed glass, laminated glass, EC mirror, etc. through processes such as distribution and storage.
  • the dirt may be washed with water.
  • the low emission laminate is often used including a silver layer, and contact with water is avoided when water contacts the laminate including the silver layer. It is preferable.
  • the glass with a low-emission laminate using the amorphous tantalum oxide thin film of the present invention as a protective film for the silver layer does not cause deterioration of the film surface at the time of cleaning in contact with water as described above.
  • the tantalum oxide thin film according to the present invention has a low internal stress due to its low densification degree, the influence on the substrate and other films is reduced. Therefore, it is preferably used for thin film laminates such as infrared shielding films, optical filters, and all solid-state EC elements. Specifically, it is preferably used as a protective film for a metal thin film such as silver or a base film for a metal film.
  • Example 1 The tantalum oxide thin film was formed using a DC magnetron sputtering apparatus having a schematic structure as shown in FIG. FIG. 1 shows a main part when the apparatus is observed from above.
  • a Ta target is used for the target 1 and a transparent base material (soda-lime silicate glass obtained by a float process) 3 is held by the base material holder 2, and then the inside of the vacuum chamber 8 is evacuated using a vacuum pump 5. did.
  • two targets 1 are drawn, but the number and type of installations are appropriately set according to the number of thin films stacked and the type of film.
  • O 2 gas is introduced from the gas introduction pipe 7.
  • the gas flow rate was controlled by a mass flow controller (not shown).
  • the pressure in the vacuum chamber 8 during film formation was adjusted to 0.3 Pa by the opening / closing valve 6. Furthermore, the output power of the DC power source was 3 kW.
  • the substrate holder 2 was transported on the transport roll 12 and passed by the side of the target 1. The passage speed at this time was adjusted to obtain a tantalum pentoxide thin film having a thickness of 37 nm.
  • Example 2 As the atmospheric gas in the vacuum chamber 8, O 2 and CO 2 gases are introduced from the gas introduction pipe 7, the gas flow rate is controlled by a mass flow controller (not shown), and the CO 2 flow ratio [ ⁇ CO 2 / ( O 2 + CO 2 ) ⁇ ⁇ 100] was 75% by volume.
  • a tantalum pentoxide thin film was obtained by the same procedure as in Example 1 except that the reactive gas flow ratio was changed.
  • Comparative Example 1 In Comparative Example 1, a tin oxide thin film was obtained in the same procedure as in Example 1 except that the tin oxide thin film was prepared with an O 2 flow rate ratio of 100% by volume.
  • (1) Evaluation of tantalum oxide thin film and tin oxide thin film obtained in Example 1 or 2 and Comparative Example 1 The density of the obtained thin film was evaluated by an X-ray reflectivity method using CuK ⁇ rays, The degree of densification was evaluated. The refractive index was evaluated by thin film optical simulation from the film surface reflectance, glass surface reflectance, and transmittance measured using a magnetic spectrophotometer (U-4000 manufactured by Hitachi, Ltd.).
  • (2) Evaluation of internal stress of thin film The internal stress of the thin film was evaluated by the cantilever method.
  • This method is a method for determining the internal stress of the film by measuring the amount of change in the warpage of the substrate before and after film formation.
  • the base material was a microsheet glass having a thickness of 0.1 mm, and a thin film was formed under the same conditions as in Examples 1 and 2 and Comparative Example 1. However, only one end of the glass substrate was fixed to the substrate holder 2.
  • the value of the internal stress is expressed as a negative value.
  • the magnitude of the internal stress is evaluated as an absolute value, it can be evaluated that the internal stress is smaller as the numerical value is closer to zero.
  • the evaluation results are shown in Table 1. Furthermore, the relationship between the densification degree and the internal stress of the thin film is shown in FIG. In each of Examples 1 and 2, the degree of densification was 95% or less, the absolute value of internal stress was 13.0 ⁇ 10 8 N / m 2 or less, and the refractive index was 2.05 or less.
  • Example 3 A thin film laminate was produced using a DC magnetron sputtering apparatus having a schematic structure as shown in FIG.
  • a Zn target was used as the upstream target 1
  • an Ag target was used as the downstream target 1
  • a ZnAlO (Al 4 wt% -containing ZnO) target was used as the downstream target 1
  • a Ta target was used as the most downstream target 1.
  • the inside of the vacuum chamber 8 was evacuated using the vacuum pump 5.
  • the atmosphere gas in the vacuum chamber 8 introduces O 2 gas from the gas introduction pipe 7, the gas flow rate is controlled by a mass flow controller (not shown), and the gas atmosphere is adjusted according to the laminate type of the laminate. did.
  • the pressure in the vacuum chamber 8 during film formation was adjusted by the open / close valve 6.
  • the output power of the DC power source was 1 kW.
  • the substrate holder 2 was transported on the transport roll 12 and passed by the side of the target 1. This adjusts the rate of passage of time by adjusting the thickness of each thin layer, a thin film in the order of ZnO / Ag / ZnAlO / Ta 2 O 5 has a laminated body that is laminated on the transparent substrate 3.
  • the zinc oxide thin film layer was a layer having a thickness of 37 nm.
  • the O 2 gas in the vacuum chamber 8 is evacuated, and then the Ar gas is controlled from the gas introduction pipe 7 by the mass flow controller while being placed in the vacuum chamber 8.
  • the pressure was set to 0.5 Pa.
  • the output power of the DC power source was 0.4 kW.
  • the Ag thin film layer is The film thickness was 10 nm.
  • the conditions for forming the ZnAlO thin film layer on the Ag thin film layer were the same as those for forming the Ag thin film layer.
  • the ZnAlO thin film layer had a thickness of 5 nm.
  • the Ar gas in the vacuum chamber 8 was evacuated, and then O 2 gas was introduced from the gas introduction pipe 7 so that the O 2 flow rate ratio was 100%.
  • the pressure in the vacuum chamber 8 during film formation was adjusted to 0.3 Pa by the opening / closing valve 6.
  • the tantalum oxide thin film layer had a thickness of 37 nm.
  • Example 4 A thin film laminate was obtained in the same procedure as in Example 5 except that the CO 2 flow ratio ⁇ [CO 2 / (O 2 + CO 2 )] ⁇ 100 ⁇ was changed to 75% by volume at the time of forming the tantalum oxide film.
  • Table 2 shows the internal stress and the number of defects of the tantalum oxide films in Examples 3 and 4 and Comparative Example 2. From Table 2, in Examples 3 and 4, the internal stress of the tantalum oxide film was small, resulting in a small number of defects.
  • Example 3 and 4 were fabricated from Example 3 and 4 with favorable moisture resistance.
  • the base material on which the thin film laminate was formed was washed with pure water at a temperature of 40 ° C. for 10 minutes using an ultrasonic cleaner, and hot air drying was performed after the washing. Even after the water washing and drying steps described above, no defects occurred on the surface of the thin film laminate.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)

Abstract

Dans les stratifiés à film mince, une délamination peut se produire au cours du temps à une interface entre un film mince d'oxyde métallique et un film mince de métal, ou entre un film mince d'oxyde métallique et un film mince d'oxyde métallique. Par conséquent, l'invention porte sur un film mince d'oxyde de tantale amorphe avec une contrainte interne inférieure. Le film mince d'oxyde de tantale amorphe est formé sur un substrat transparent par une méthode de pulvérisation cathodique, et si la densité théorique dudit film mince d'oxyde de tantale est ρ0 et la densité mesurée est ρ, la valeur représentée par (ρ / ρ0) x 100 est de 75 – 95 % en volume.
PCT/JP2010/052706 2009-03-10 2010-02-23 Film mince d'oxyde de tantale et stratifié à films minces WO2010103914A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009056890A JP2010209413A (ja) 2009-03-10 2009-03-10 酸化タンタル薄膜及び薄膜積層体
JP2009-056890 2009-03-10

Publications (1)

Publication Number Publication Date
WO2010103914A1 true WO2010103914A1 (fr) 2010-09-16

Family

ID=42728205

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/052706 WO2010103914A1 (fr) 2009-03-10 2010-02-23 Film mince d'oxyde de tantale et stratifié à films minces

Country Status (2)

Country Link
JP (1) JP2010209413A (fr)
WO (1) WO2010103914A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115818977A (zh) * 2022-11-03 2023-03-21 广西大学 一种用于电致变色器件对电极的氧化钽纳米线薄膜的制备方法及电致变色器件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0656477A (ja) * 1992-08-13 1994-03-01 Central Glass Co Ltd グレー色電波透過型熱線遮蔽ガラス
JP2002194529A (ja) * 2000-10-20 2002-07-10 Asahi Glass Co Ltd 光学薄膜の作製方法
JP2004228355A (ja) * 2003-01-23 2004-08-12 Seiko Epson Corp 絶縁膜基板の製造方法、絶縁膜基板の製造装置及び絶縁膜基板並びに電気光学装置の製造方法及び電気光学装置
JP2005042160A (ja) * 2003-07-22 2005-02-17 Matsushita Electric Ind Co Ltd 膜厚制御方法および膜厚制御装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0656477A (ja) * 1992-08-13 1994-03-01 Central Glass Co Ltd グレー色電波透過型熱線遮蔽ガラス
JP2002194529A (ja) * 2000-10-20 2002-07-10 Asahi Glass Co Ltd 光学薄膜の作製方法
JP2004228355A (ja) * 2003-01-23 2004-08-12 Seiko Epson Corp 絶縁膜基板の製造方法、絶縁膜基板の製造装置及び絶縁膜基板並びに電気光学装置の製造方法及び電気光学装置
JP2005042160A (ja) * 2003-07-22 2005-02-17 Matsushita Electric Ind Co Ltd 膜厚制御方法および膜厚制御装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
B. P. HICHWA: "Quantitative measurement of film thickness, density and stoichiometry of multilayer thin films on thick substrates", NUCL. INSTRUM. METHODS PHYS. RES. B, vol. 24/25, no. 1, April 1987 (1987-04-01), pages 584 - 586 *
P. J. MARTIN ET AL.: "Properties of thin films of tantalum oxidede posited by ion-assisted deposition", THIN SOLID FILMS, vol. 239, no. 2, 1 March 1994 (1994-03-01), pages 181 - 185 *
W. D. WESTWOOD ET AL.: "Effect of pressure on the properties of reactively sputtered Ta205", J. VAC. SCI. TECHNOL., vol. 11, no. 1, 1974, pages 381 - 384 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115818977A (zh) * 2022-11-03 2023-03-21 广西大学 一种用于电致变色器件对电极的氧化钽纳米线薄膜的制备方法及电致变色器件
CN115818977B (zh) * 2022-11-03 2024-04-30 广西大学 一种用于电致变色器件对电极的氧化钽纳米线薄膜的制备方法及电致变色器件

Also Published As

Publication number Publication date
JP2010209413A (ja) 2010-09-24

Similar Documents

Publication Publication Date Title
JP2625079B2 (ja) 放射率の低い太陽熱制御型耐久性薄膜コーティング
JP5722346B2 (ja) 高品質放射制御コーティング、放射制御ガラスおよび製造方法
KR920007499B1 (ko) 투과도가 높고 복사율이 낮은 물품 및 그 제조방법
US6899953B1 (en) Shippable heat-treatable sputter coated article and zinc cathode sputtering target containing low amounts of tin
US20180079681A1 (en) Tin oxide overcoat indium tin oxide coatings, coated glazings, and production methods
CN200958077Y (zh) 可钢化低辐射镀膜玻璃
JPH0715143B2 (ja) 高透過率、低輻射率の耐熱性の窓又はウインドシールド
WO1991002102A1 (fr) Film base sur du dioxide de silicium et sa production
CN105130209A (zh) 一种高透低成本可调色低辐射节能玻璃及其制备方法
JP2007191384A (ja) 低放射ガラス
US9296649B2 (en) Process for producing laminate, and laminate
CN201424436Y (zh) 低反射镀膜玻璃
JP6601419B2 (ja) 積層膜付きガラス板および複層ガラス
WO2019157799A1 (fr) Procédé de préparation de verre revêtu à faible rayonnement
JP2011173764A (ja) 低放射膜
CN102336529A (zh) 高透可钢化低辐射玻璃及其制造方法
KR20110018069A (ko) 반사방지용 다층코팅을 갖는 투명 기판 및 그 제조방법
JPH07249316A (ja) 透明導電膜および該透明導電膜を用いた透明基体
WO2010103914A1 (fr) Film mince d'oxyde de tantale et stratifié à films minces
JP2018002564A (ja) グレー色調低放射ガラス
WO2010098200A1 (fr) Article à couches multiples
JP2008222507A (ja) 複層ガラス
JP2010031346A (ja) 酸化亜鉛薄膜及び薄膜積層体
JP2014124815A (ja) 低放射膜
JP2017132666A (ja) グレー色調低放射ガラス、及びグレー色調低放射ガラスの製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10750668

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10750668

Country of ref document: EP

Kind code of ref document: A1