WO2010097908A1 - 接合ガラスの切断方法、パッケージの製造方法、パッケージ、圧電振動子、発振器、電子機器及び電波時計 - Google Patents
接合ガラスの切断方法、パッケージの製造方法、パッケージ、圧電振動子、発振器、電子機器及び電波時計 Download PDFInfo
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- WO2010097908A1 WO2010097908A1 PCT/JP2009/053337 JP2009053337W WO2010097908A1 WO 2010097908 A1 WO2010097908 A1 WO 2010097908A1 JP 2009053337 W JP2009053337 W JP 2009053337W WO 2010097908 A1 WO2010097908 A1 WO 2010097908A1
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- Prior art keywords
- glass
- bonding
- laser
- cutting
- piezoelectric vibrator
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- 238000005520 cutting process Methods 0.000 title claims abstract description 107
- 239000011521 glass Substances 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims abstract description 145
- 239000000463 material Substances 0.000 claims abstract description 37
- 238000010521 absorption reaction Methods 0.000 claims abstract description 10
- 230000001678 irradiating effect Effects 0.000 claims abstract description 9
- 238000005304 joining Methods 0.000 claims description 13
- 239000005361 soda-lime glass Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 174
- 239000010410 layer Substances 0.000 description 55
- 230000008569 process Effects 0.000 description 39
- 238000009966 trimming Methods 0.000 description 25
- 235000014676 Phragmites communis Nutrition 0.000 description 14
- 239000002344 surface layer Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 11
- 238000004891 communication Methods 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 230000005284 excitation Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 7
- 230000002950 deficient Effects 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000011162 core material Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 210000000707 wrist Anatomy 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000005433 ionosphere Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
- C03B33/033—Apparatus for opening score lines in glass sheets
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/07—Cutting armoured, multi-layered, coated or laminated, glass products
- C03B33/076—Laminated glass comprising interlayers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/09—Severing cooled glass by thermal shock
- C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
- C03B33/093—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam using two or more focussed radiation beams
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T83/00—Cutting
- Y10T83/04—Processes
- Y10T83/0405—With preparatory or simultaneous ancillary treatment of work
- Y10T83/041—By heating or cooling
Definitions
- the present invention relates to a bonding glass cutting method, a package manufacturing method, a package, a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece.
- a piezoelectric vibrator (package) using a crystal or the like as a time source, a timing source such as a control signal, a reference signal source or the like is used in a mobile phone or a portable information terminal device.
- Various piezoelectric vibrators of this type are known, and one of them is a surface mount (SMD) type piezoelectric vibrator.
- SMD surface mount
- As this type of piezoelectric vibrator for example, a base substrate and a lid substrate bonded to each other, a cavity formed between both substrates, and a piezoelectric vibrating piece (electronic) housed in a hermetically sealed state in the cavity Parts).
- a cavity concave portion is formed on the lid substrate wafer, and after mounting the piezoelectric vibrating reed on the base substrate wafer, the both wafers are interposed through a bonding layer.
- a wafer bonded body is formed in which a plurality of packages are formed in the wafer matrix direction. Then, by cutting the wafer bonded body for each package (for each cavity) formed on the wafer bonded body, a plurality of piezoelectric vibrators (packages) in which the piezoelectric vibrating pieces are hermetically sealed in the cavity are manufactured. It is.
- a method for cutting the wafer bonded body for example, a method of cutting (dicing) the wafer bonded body along the thickness direction using a blade having diamond attached to the tooth tip is known.
- a blade having diamond attached to the tooth tip it is necessary to provide a cutting allowance in consideration of the width of the blade between the cavities, so that the number of piezoelectric vibrators that can be taken out from one wafer bonded body is small, and chipping occurs during cutting.
- There were problems such as a rough cut surface.
- the processing speed is slow, there is a problem that the production efficiency is poor.
- Patent Document 1 an infinite number of laser pulse marks are generated inside the wafer bonded body, and these pulse marks become damaged layers and remain inside the wafer bonded body. Further, there is a problem that cracks in the surface direction of the wafer bonded body are generated when the wafer bonded body is cut because stress concentrates on the damaged layer. Further, there is a problem that the mechanical durability of the piezoelectric vibrator formed after cutting the wafer bonded body is lowered.
- the wafer bonded body is formed by anodic bonding through the bonding layer as described above, but it is necessary to apply a voltage to the entire bonding layer at the time of bonding the wafer. Therefore, the bonding layer needs to be continuously formed on the bonding surface of the wafer bonded body.
- the wafer bonded body is cut in a state where the bonding layer is continuously formed on the bonding surface, that is, in a state where the bonding layers are connected between the piezoelectric vibrators, the thickness direction of the wafer bonded body during braking The crack progress is prevented.
- this invention is made
- the cutting method of the joining glass which can improve a yield by cut
- the cutting method of the bonding glass according to the present invention is a cutting method of bonding glass in which the bonding glass formed by bonding the bonding surfaces of a plurality of glass substrates to each other through a bonding material is cut along a planned cutting line.
- the joining glass prior to the cutting step, after forming a groove along the planned cutting line in the surface layer portion of the glass substrate, the joining glass can be cut by applying a cleaving stress along the planned cutting line. it can.
- advantages such as a very small cutting allowance, a high cutting speed, good surface accuracy of the cut surface, and no occurrence of chipping as compared with a conventional blade cutting method.
- a damage layer since there is no possibility that a damage layer is formed inside the bonded glass, the occurrence of cracks in the surface direction of the bonded glass when the bonded glass is cut, and the mechanical durability of the bonded glass after cutting is reduced. There is no.
- the bonding material on the planned cutting line is peeled off prior to the second laser irradiation step, thereby promoting the progress of cracks in the thickness direction of the bonding glass during cutting and the cracking in the surface direction of the bonding glass. Progress can be prevented. Therefore, the joining glass is smoothly cut along the planned cutting line. Thereby, while being able to improve the surface accuracy of a cut surface, the joining glass can be prevented from cracking at the time of cutting, and the joining glass can be cut into a desired size.
- the bonding material is made of a conductive metal material, and the bonding glass is anodically bonded to the bonding surfaces of the plurality of glass substrates.
- the wavelength of the first laser Is set to 532 nm.
- the glass substrates are anodically bonded to each other through the metal material, so that the glass substrate is bonded to each other with an adhesive or the like. And glass substrates can be firmly bonded to each other.
- the first laser irradiation step by using the first laser having a wavelength of 532 nm, all the output of the laser light is absorbed and heated by the bonding material. The bonding material shrinks outside the laser light irradiation area. As a result, the bonding material on the planned cutting line can be peeled off satisfactorily.
- the glass substrate is made of soda-lime glass, and in the second laser irradiation step, the wavelength of the second laser is set to 266 nm.
- the laser light is completely absorbed in the surface layer portion of the bonding glass, Desired grooves could be formed in the surface layer portion. That is, since it is possible to form a groove with less chipping and debris and good linearity, the bonded glass can be cut to a desired size in the subsequent cutting step.
- a cleaving stress is applied along the groove from the other surface of the bonding glass. According to this configuration, since the joining glass can be cut more smoothly and easily by applying cleaving stress along the groove from the other surface of the joining glass, a better cutting surface can be obtained. .
- the bonding glass is bonded by arranging the bonding material only on a part of the planned cutting line, and in the first laser irradiation step, only the first bonding material arranged on the planned cutting line is the first. It is characterized by irradiating with laser light. According to this configuration, the area of the bonding material that is peeled off by the first laser can be reduced in the first laser irradiation step. Thereby, it is possible to shorten the working time of the first laser irradiation process and improve the working efficiency.
- the package manufacturing method according to the present invention includes a plurality of glass substrates bonded to each other via a bonding material, and a cavity formed inside the plurality of glass substrates, and an electronic component in the cavity
- the bonding glass cutting method according to the present invention by cutting the glass substrate using the bonding glass cutting method according to the present invention, the progress of cracks in the thickness direction of the bonding glass is promoted at the time of cutting, and in the surface direction of the bonding glass. The progress of cracks can be prevented. Therefore, at the time of cutting, the glass substrate is smoothly cut along the planned cutting line for each package forming region.
- the package according to the present invention includes a plurality of glass substrates bonded to each other via a bonding material, and a cavity formed inside the plurality of glass substrates, and an electronic component is enclosed in the cavity.
- the package is cut using the bonding glass cutting method of the present invention, and the outer peripheral edge of the package on the irradiation surface side of the second laser is formed by the second laser. It has a chamfered portion formed by cleaving the formed groove. According to this configuration, when the cut package is taken out, the chipping can be suppressed even when the tool for taking out the package comes into contact with the corner of the package. Can be taken out in a state.
- each chamfered portion is formed in the package after cutting.
- the chamfered portion can be formed quickly and easily compared to the case. As a result, work efficiency can be improved. Furthermore, by cutting the bonding glass along the grooves in this way, the surface accuracy of the cut surface of the package can be improved, and a highly reliable package can be provided.
- the piezoelectric vibrator according to the present invention is characterized in that a piezoelectric vibrating piece is hermetically sealed in the cavity of the package of the present invention. According to this configuration, it is possible to provide a piezoelectric vibrator that ensures airtightness in the cavity and has excellent vibration characteristics.
- the oscillator according to the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to an integrated circuit as an oscillator.
- the electronic device is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a time measuring unit.
- the radio timepiece according to the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a filter portion.
- the oscillator, electronic device, and radio timepiece according to the present invention include the above-described piezoelectric vibrator, a highly reliable product can be provided in the same manner as the piezoelectric vibrator.
- the progress of cracks in the thickness direction of the bonded glass is promoted at the time of cutting by peeling off the bonding material on the planned cutting line prior to the second laser irradiation step.
- the joining glass can be prevented from cracking at the time of cutting, and the joining glass can be cut into a desired size.
- the package manufacturing method and package of the present invention by cutting the glass substrate using the bonding glass cutting method of the present invention, the airtightness of the cavity can be ensured, and the package is highly reliable. Can be provided. Therefore, the number of packages taken out as non-defective products can be increased, and the yield can be improved.
- the piezoelectric vibrator of the present invention it is possible to provide a highly reliable piezoelectric vibrator that ensures airtightness in the cavity and has excellent vibration characteristics. Since the oscillator, electronic device, and radio timepiece according to the present invention include the above-described piezoelectric vibrator, a highly reliable product can be provided in the same manner as the piezoelectric vibrator.
- FIG. 1 is an external perspective view showing an embodiment of a piezoelectric vibrator according to the present invention.
- FIG. 2 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1, and is a view of a piezoelectric vibrating piece viewed from above with a lid substrate removed.
- FIG. 3 is a sectional view of the piezoelectric vibrator taken along line AA shown in FIG.
- FIG. 2 is an exploded perspective view of the piezoelectric vibrator shown in FIG. 1. It is a flowchart which shows the flow at the time of manufacturing the piezoelectric vibrator shown in FIG.
- FIG. 6 is a diagram illustrating a process for manufacturing a piezoelectric vibrator according to the flowchart illustrated in FIG.
- SYMBOLS 1 Piezoelectric vibrator (package) 5 ... Piezoelectric vibration piece (electronic component) 23 ... Bonding layer (bonding material) 40 ... Base substrate wafer (glass substrate) 50 ... Lid substrate wafer 60 ... Wafer bonded body (bonding glass) 87 ... 1st laser 88 ... 2nd laser 90 ... Chamfered part 100 ... Oscillator 101 ... Oscillator integrated circuit 110 ... Portable information device (electronic device) 113 ... Electronic device timekeeping unit 130 ... Radio clock 131 ... Radio wave clock filter unit C ... cavity M ... contour line (scheduled cutting line) M '... scribe line (groove)
- FIG. 1 is an external perspective view of the piezoelectric vibrator according to the present embodiment
- FIG. 2 is an internal configuration diagram of the piezoelectric vibrator, and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed.
- FIG. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG. 2, and
- FIG. 4 is an exploded perspective view of the piezoelectric vibrator. As shown in FIGS.
- the piezoelectric vibrator 1 is formed in a box shape in which a base substrate 2 and a lid substrate 3 are laminated in two layers, and the piezoelectric vibrating reed 5 is accommodated in an internal cavity C.
- the surface mount type piezoelectric vibrator 1 is provided.
- the piezoelectric vibrating reed 5 and the external electrodes 6 and 7 installed outside the base substrate 2 are electrically connected by a pair of through electrodes 8 and 9 penetrating the base substrate 2.
- the base substrate 2 is formed in a plate shape with a transparent insulating substrate made of a glass material such as soda lime glass.
- the base substrate 2 is formed with a pair of through holes (through holes) 21 and 22 in which a pair of through electrodes 8 and 9 are formed.
- the through-holes 21 and 22 have a tapered cross section in which the diameter gradually decreases from the outer end surface (lower surface in FIG. 3) of the base substrate 2 toward the inner end surface (upper surface in FIG. 3).
- the lid substrate 3 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, and is formed in a plate shape that can be superimposed on the base substrate 2.
- a rectangular recess 3 a for accommodating the piezoelectric vibrating reed 5 is formed on the bonding surface side of the lid substrate 3 to which the base substrate 2 is bonded.
- the concave portion 3 a forms a cavity C that accommodates the piezoelectric vibrating piece 5 when the base substrate 2 and the lid substrate 3 are overlaid.
- the lid substrate 3 is anodically bonded to the base substrate 2 via a bonding layer (bonding material) 23 to be described later with the recess 3a facing the base substrate 2 side.
- a chamfered portion 90 in which a corner portion of the lid substrate 3 is chamfered is formed on the upper peripheral edge of the lid substrate 3 during a scribing process, which will be described later, in the manufacturing process of the piezoelectric vibrator 1.
- the piezoelectric vibrating piece 5 is a tuning fork type vibrating piece formed from a piezoelectric material such as quartz, lithium tantalate, or lithium niobate, and vibrates when a predetermined voltage is applied.
- the piezoelectric vibrating reed 5 includes a pair of vibrating arm portions 24 and 25 arranged in parallel and a base portion 26 that integrally fixes the base end sides of the pair of vibrating arm portions 24 and 25 in a plan view.
- An excitation electrode comprising a pair of first excitation electrode and a second excitation electrode (not shown) that vibrates the vibration arm portions 24, 25 on the outer surface of the pair of vibration arm portions 24, 25;
- the piezoelectric vibrating reed 5 configured as described above is bump-bonded onto the lead-out electrodes 27 and 28 formed on the inner end surface of the base substrate 2 by using bumps B such as gold.
- bumps B such as gold.
- the first excitation electrode of the piezoelectric vibrating piece 5 is bump-bonded on one lead-out electrode 27 via one mount electrode and bump B, and the second excitation electrode is connected to the other mount electrode and Bump bonding is performed on the other lead-out electrode 28 via the bump B.
- the piezoelectric vibrating reed 5 is supported in a state where it floats from the inner end face of the base substrate 2, and the mount electrodes and the routing electrodes 27 and 28 are electrically connected to each other.
- a bonding layer 23 for anodic bonding made of a conductive material (for example, aluminum) is formed on the inner end surface side of the base substrate 2 (the bonding surface side to which the lid substrate 3 is bonded).
- the bonding layer 23 is formed along the periphery of the base substrate 2 so as to surround the periphery of the recess 3 a formed in the lid substrate 3.
- the base substrate 2 and the lid substrate 3 are anodically bonded to the base substrate 2 via the bonding layer 23 with the recess 3a facing the bonding surface side of the base substrate 2.
- the external electrodes 6 and 7 are disposed at both ends in the longitudinal direction on the outer end face of the base substrate 2, and are electrically connected to the piezoelectric vibrating reed 5 via the through electrodes 8 and 9 and the routing electrodes 27 and 28. It is connected to the. More specifically, one external electrode 6 is electrically connected to one mount electrode of the piezoelectric vibrating piece 5 through one through electrode 8 and one routing electrode 27. The other external electrode 7 is electrically connected to the other mount electrode of the piezoelectric vibrating piece 5 through the other through electrode 9 and the other lead-out electrode 28.
- the through-electrodes 8 and 9 are formed by the cylindrical body 32 and the core member 31 that are integrally fixed to the through-holes 21 and 22 by firing, and completely close the through-holes 21 and 22 to form a cavity.
- the airtightness in C is maintained, and the external electrodes 6 and 7 and the routing electrodes 27 and 28 are electrically connected.
- one through electrode 8 is positioned below the routing electrode 27 between the external electrode 6 and the base 26, and the other through electrode 9 is routed above the external electrode 7 and below the routing electrode 28. Is located.
- the cylindrical body 32 is obtained by baking paste-like glass frit.
- the cylindrical body 32 is formed in a cylindrical shape having flat ends and substantially the same thickness as the base substrate 2.
- the core member 31 is disposed so as to penetrate the central hole 32 c of the cylindrical body 32.
- the outer shape of the cylindrical body 32 is formed in a conical shape (tapered cross section) in accordance with the shape of the through holes 21 and 22. The cylindrical body 32 is fired in a state of being embedded in the through holes 21 and 22, and is firmly fixed to the through holes 21 and 22.
- the core material portion 31 described above is a conductive core material formed in a cylindrical shape from a metal material, and both ends are flat like the cylindrical body 32 and have a thickness substantially the same as the thickness of the base substrate 2. Is formed.
- the through electrodes 8 and 9 are ensured to have electrical conductivity through the conductive core portion 31.
- a predetermined drive voltage is applied to the external electrodes 6 and 7 formed on the base substrate 2.
- a current can be passed through each excitation electrode of the piezoelectric vibrating piece 5, and the pair of vibrating arm portions 24 and 25 can be vibrated at a predetermined frequency in a direction in which the pair of vibrating arm portions 24 and 25 approaches and separates.
- the vibration of the pair of vibrating arm portions 24 and 25 can be used as a time source, a control signal timing source, a reference signal source, or the like.
- the piezoelectric vibrating reed manufacturing step is performed to manufacture the piezoelectric vibrating reed 5 shown in FIGS. 1 to 4 (S10). Further, after the piezoelectric vibrating piece 5 is manufactured, the resonance frequency is coarsely adjusted. Note that fine adjustment for adjusting the resonance frequency with higher accuracy is performed after mounting.
- FIG. 6 is an exploded perspective view of the wafer bonded body in which the base substrate wafer and the lid substrate wafer are anodically bonded in a state where the piezoelectric vibrating piece is accommodated in the cavity.
- a first wafer manufacturing step is performed in which a lid substrate wafer 50 to be the lid substrate 3 later is manufactured to a state just before anodic bonding (S20). Specifically, after polishing and cleaning soda-lime glass to a predetermined thickness, a disk-shaped lid substrate wafer 50 is formed by removing the outermost work-affected layer by etching or the like (S21).
- a recess forming step is performed for forming a plurality of recesses 3a for the cavity C in the matrix direction by etching or the like on the inner end surface 50a (the lower surface in FIG. 6) of the lid substrate wafer 50 (S22).
- a polishing step at least polishing the inner end face 50a side of the lid substrate wafer 50 to be a joint surface with the base substrate wafer 40) S23 is performed to mirror the inner end face 50a.
- the second wafer creation process (S20) is completed.
- a first wafer manufacturing process is performed in which the base substrate wafer 40 to be the base substrate 2 later is manufactured up to the state immediately before anodic bonding (S30).
- a disk-shaped base substrate wafer 40 is formed by removing the outermost work-affected layer by etching or the like (S31).
- a through-hole forming step is performed in which a plurality of through-holes 21 and 22 for arranging the pair of through-electrodes 8 and 9 are formed on the base substrate wafer by, for example, pressing (S32).
- the recess is penetrated by polishing from the other surface side of the base substrate wafer 40, 22 can be formed.
- a through electrode forming step (S33) for forming the through electrodes 8 and 9 in the through holes 21 and 22 formed in the through hole forming step (S32) is performed.
- the core member 31 is held flush with both end surfaces 40 a and 40 b (upper and lower surfaces in FIG. 6) of the base substrate wafer 40.
- the through electrodes 8 and 9 can be formed.
- a conductive material is patterned on the inner end surface 40a of the base substrate wafer 40 to perform a bonding layer forming process for forming the bonding layer 23 (S34), and a lead electrode forming process is performed (S35).
- the bonding layer 23 is formed over a region other than the formation region of the cavity C in the base substrate wafer 40, that is, the entire bonding region with the inner end face 50 a of the lid substrate wafer 50. In this way, the second wafer manufacturing process (S30) is completed.
- the piezoelectric vibrating reeds 5 created in the piezoelectric vibrating reed creating step (S10) are respectively formed on the routing electrodes 27 and 28 of the base substrate wafer 40 created in the second wafer creating step (S30). It mounts via bumps B, such as gold (S40). Then, an overlaying step is performed in which the base substrate wafer 40 and the lid substrate wafer 50 created in the above-described production steps of the wafers 40 and 50 are overlaid (S50). Specifically, both wafers 40 and 50 are aligned at the correct positions while using a reference mark (not shown) as an index. As a result, the mounted piezoelectric vibrating reed 5 is housed in a cavity C surrounded by the recess 3 a formed in the lid substrate wafer 50 and the base substrate wafer 40.
- the two superposed wafers 40 and 50 are put into an anodic bonding apparatus (not shown), and a predetermined voltage is applied in a predetermined temperature atmosphere with the outer peripheral portion of the wafer clamped by a holding mechanism (not shown). Then, a bonding step for anodic bonding is performed (S60). Specifically, a predetermined voltage is applied between the bonding layer 23 and the lid substrate wafer 50. As a result, an electrochemical reaction occurs at the interface between the bonding layer 23 and the lid substrate wafer 50, and the two are firmly adhered to each other and anodic bonded.
- the piezoelectric vibrating piece 5 can be sealed in the cavity C, and the wafer bonded body 60 in which the base substrate wafer and the lid substrate wafer 50 are bonded can be obtained.
- the two wafers 40 and 50 are anodically bonded as in the present embodiment, so that the deterioration due to deterioration with time, impact, etc., and the wafer bonded body, compared with the case where the two wafers 40 and 50 are bonded with an adhesive or the like. Therefore, the wafers 40 and 50 can be bonded more firmly.
- FIG. 7 is a flowchart showing the procedure of the wafer singulation process.
- 8 to 13 are cross-sectional views of the wafer bonded body and are process diagrams for explaining the singulation process.
- an individualization process is performed for cutting and bonding the bonded wafer bonded body 60 (S90).
- a magazine 82 for holding the wafer bonded body 60 is created using the UV tape 80 and the ring frame 81 (S91).
- the ring frame 81 is a ring-shaped member having an inner diameter larger than the diameter of the wafer bonded body 60, and has a thickness equivalent to that of the wafer bonded body 60.
- the UV tape 80 is a polyolefin sheet material coated with an acrylic adhesive. Specifically, UHP-1525M3 manufactured by Denki Kagaku Kogyo, D510T manufactured by Lintec, etc. are preferably used. Yes.
- the thickness of the UV tape sheet material is preferably about 170 ⁇ m. It is not preferable to use a UV tape whose sheet material is thinner than 170 ⁇ m because the UV tape 80 may be cut together with the wafer bonded body 60 in the braking process (S103) described later.
- the magazine 82 can be created by attaching the UV tape 80 from one surface 81a of the ring frame 81 so as to close the through hole 81b. Then, the wafer bonded body 60 is adhered to the adhesive surface of the UV tape 80 in a state where the central axis of the ring frame 81 and the central axis of the wafer bonded body 60 are matched (S92). Specifically, the outer end surface 40 b side (external electrode side) of the base substrate wafer 40 is attached to the adhesive surface of the UV tape 80. As a result, the wafer bonded body 60 is set in the through hole 81 b of the ring frame 81. In this state, the wafer bonded body 60 is transferred to a laser scribing device (not shown) (S93).
- FIG. 14 is an explanatory diagram for explaining the trimming process, and is a plan view of the base substrate wafer showing a state in which the lid substrate wafer of the wafer bonded body is removed.
- a trimming step for peeling the bonding layer 23 bonding the lid substrate wafer 50 and the base substrate wafer 40 is performed (S94).
- the laser beam R1 emitted from the first laser 87 is reflected by a beam scanner (galvanometer) and then condensed through an F ⁇ lens.
- the laser beam R1 and the wafer bonded body 60 are relatively moved in parallel while irradiating the condensed laser light R1 from the outer end face 50b side of the lid substrate wafer 50 in the wafer bonded body 60.
- the first laser 87 is scanned along the partition walls that partition the cavities C, that is, along the contour line (scheduled cutting line) M (see FIG. 6) of the piezoelectric vibrator 1.
- the spot diameter of the laser beam R1 in the trimming step (S94) is preferably about 10 ⁇ m to 30 ⁇ m, for example, and is set to be about 20 ⁇ m in this embodiment.
- the bonding layer 23 on the contour line M absorbs the laser beam R1 and is heated, so that the bonding layer 23 melts and contracts outside the irradiation region (contour line M) of the laser beam R1.
- a trimming line T formed by peeling the bonding layer 23 from the bonding surface is formed on the bonding surfaces of the wafers 40 and 50 (the inner end surface 50a of the lid substrate wafer 50 and the inner end surface 40a of the base substrate wafer 40). It is formed.
- the surface layer portion of the outer end face 50b of the lid substrate wafer 50 is irradiated with the laser beam R2 to form a scribe line M ′ on the wafer bonded body 60 (S95: scribe process (second process) Laser irradiation process)).
- a laser that emits light having an absorption band wavelength of the lid substrate wafer 50 (soda lime glass), for example, a second laser 88 made of a UV-Deep laser having a wavelength of 266 nm is used.
- the surface layer portion of the lid substrate wafer 50 is melted.
- the second laser 88 and the wafer bonded body 60 are relatively moved in parallel, and the laser is scanned along the contour line M of the piezoelectric vibrator 1. Then, the surface layer portion of the lid substrate wafer 50 absorbs the laser beam R2 and is heated, so that the lid substrate wafer 50 is melted and a V-groove scribe line M 'is formed. As described above, the first laser 87 and the second laser 88 are scanned along the contour line M of each piezoelectric vibrator 1. Thus, the trimming line T and the scribe line M ′ from which the bonding layer 23 has been peeled are arranged so as to overlap each other when the wafer bonded body 60 is viewed from the thickness direction.
- the spot diameter of the laser beam R2 on the surface layer portion of the lid substrate wafer 50 is preferably about 10 ⁇ m to 30 ⁇ m, for example, and is set to be about 20 ⁇ m in this embodiment. . This is set in consideration of the width (cutting margin of the wafer bonded body 60) and the depth of the scribe line M ′, and when the spot diameter is less than 10 ⁇ m, the scribe line M ′ is formed at a desired depth. On the other hand, if the spot diameter is larger than 30 ⁇ m, the width of the scribe line M ′ is too wide and the cutting margin of the wafer bonded body 60 becomes large.
- Other conditions for the scribing step (S95) include, for example, a processing point output of the second laser 88 of 250 mW to 600 mW, a pulse energy of 100 ⁇ J, a processing threshold fluence of 30 J / (cm 2 ⁇ pulse), and a scanning speed of 40 mm / It is preferably set to sec to 60 mm / sec.
- a cutting process of cutting the wafer bonded body 60 on which the scribe line M ′ is formed into each piezoelectric vibrator 1 is performed (S100).
- a separator 83 is attached to the other surface 81c of the ring frame 81 so as to close the through hole 81b (S101).
- a polyethylene terephthalate film for example, Lumirror T60 (20 ⁇ mt to 60 ⁇ mt) manufactured by Toray is suitably used.
- the wafer bonded body 60 is held in the through hole 81b of the ring frame 81 in a state of being sandwiched between the UV tape 80 and the separator 83. In this state, the wafer bonded body 60 is transferred into the braking device (S102).
- a breaking process for applying cleaving stress is performed on the wafer bonded body 60 transported into the braking apparatus (S103).
- a cutting blade 70 whose blade length is longer than the diameter of the wafer bonded body 60 (the blade edge angle is 60 to 90 degrees, for example) is prepared, and the cutting blade 70 is used as the base substrate wafer 40.
- the wafer is pressed against the wafer bonded body 60 in alignment with the scribe line M ′ (trimming line T) from the outer end face 40 b side.
- scribe line M ′ trimming line T
- the wafer bonded body 60 can be collectively separated into packages for each contour line M. Thereafter, the separator 83 attached to the wafer bonded body 60 is peeled off (S104).
- the braking step (S103) as in the present embodiment cleaving stress is applied along the scribe line M ′ from the opposite side of the scribe line M ′ formation surface, that is, from the outer end surface 40b of the base substrate wafer 40.
- the cleaving stress described above is a tensile stress generated in a direction away from the scribe line M (a direction in which each piezoelectric vibrator 1 is separated).
- the UV tape 80 of the magazine 82 is irradiated with UV to reduce the adhesive strength of the UV tape 80 (S111).
- the inner ring 85a of the grip ring 85 is set in the through hole 81b of the ring frame 81 so as to surround the periphery of the wafer bonded body 60 (S112).
- the grip ring 85 is a resin ring formed to be larger than the outer diameter of the wafer bonded body 60 and smaller than the inner diameter of the through hole 81b of the ring frame 81.
- the inner ring 85a and the inner ring 85a have an inner diameter of the inner ring 85a. It is comprised by the outer side ring 85b (refer FIG. 13) formed equivalent to an outer diameter. That is, the inner ring 85a fits inside the outer ring 85b.
- an expanding process for expanding the space between the piezoelectric vibrators 1 is performed in order to make it easy to take out the separated piezoelectric vibrators 1 (S113).
- the inner ring 85a is pushed together with the wafer bonded body 60 toward the UV tape 80 (see the arrow in FIG. 12).
- the UV tape 80 extends outward in the radial direction of the wafer bonded body 60, whereby the piezoelectric vibrators 1 attached to the UV tape 80 are separated from each other, and the space between the piezoelectric vibrators 1 is expanded.
- the outer ring 85b is set outside the inner ring 85a in this state.
- both are fitted together with the UV tape 80 sandwiched between the inner ring 85a and the outer ring 85b.
- the UV tape 80 is held by the grip ring 85 in a stretched state.
- the UV tape 80 outside the grip ring 85 is cut, and the ring frame 81 and the grip ring 85 are separated.
- the UV tape 80 is again irradiated with UV to further reduce the adhesive strength of the UV tape 80.
- the piezoelectric vibrator 1 is separated from the UV tape 80.
- the piezoelectric vibrators 1 separated from the UV tape are taken out one by one.
- the lid substrate 3 of the piezoelectric vibrator 1 separated into individual pieces is obtained because the individual pieces are separated along the scribe line M ′ of the lid substrate wafer 50.
- a chamfered portion 90 which is chamfered by a scribe line M ′ is formed on the upper periphery of the substrate (for example, about C10 ⁇ m).
- the piezoelectric vibration piece 5 is sealed in the cavity C formed between the base substrate 2 and the lid substrate 3 which are anodic bonded to each other, and the two-layer structure surface mount type piezoelectric vibration shown in FIG. A plurality of children 1 can be manufactured at a time.
- an internal electrical characteristic inspection is performed (S120). That is, the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependency of the resonance frequency and resonance resistance value), etc. of the piezoelectric vibrating piece 5 are measured and checked. In addition, the insulation resistance characteristics and the like are also checked. Finally, an appearance inspection of the piezoelectric vibrator 1 is performed to finally check dimensions, quality, and the like. This completes the manufacture of the piezoelectric vibrator 1.
- the scribe line M ′ is formed along the contour line M in the surface layer portion of the lid substrate wafer 50, so that a conventional cutting method using a blade can be achieved.
- there are merits such as a very small cutting allowance, a high cutting speed, good surface accuracy of the cut surface, and no occurrence of chipping.
- the bonding layer 23 on the contour line M is peeled off prior to the scribing step (S95), thereby promoting the progress of cracks in the thickness direction of the wafer bonded body 60 during braking and the wafer bonded body 60. It is possible to prevent the crack from progressing in the surface direction. Therefore, the wafer bonded body 60 is cut smoothly and easily along the contour line M. As a result, the surface accuracy of the cut surface can be improved, the wafer bonded body 60 can be prevented from cracking during braking, and the wafer bonded body 60 can be cut to a desired size. Thereby, airtightness of the cavity C can be ensured, and the highly reliable piezoelectric vibrator 1 having excellent vibration characteristics can be provided. Therefore, it is possible to increase the number of piezoelectric vibrators 1 that are taken out as non-defective products from one wafer bonded body 60, and to improve the yield.
- the lid substrate 3 of the piezoelectric vibrator 1 has a configuration in which a chamfered portion 90 is formed on the peripheral portion thereof.
- the instrument for taking out the piezoelectric vibrator 1 comes into contact with the corner of the piezoelectric vibrator 1. Even if it exists, since generation
- the chamfered portion 90 can be automatically formed by forming the scribe line M ′ by the second laser 88 and then cutting along the scribe line M ′.
- the chamfered portions 90 can be formed quickly and easily. As a result, work efficiency can be improved. Further, by cutting the wafer bonded body 60 along the scribe line M ′ in this way, the cutting accuracy of the cut surface of the piezoelectric vibrator 1 can be improved, and the highly reliable piezoelectric vibrator 1 can be provided. .
- FIG. 15 is a graph showing the relationship of transmittance (%) to wavelength (nm).
- a YAG (Yttrium Aluminum Garnet) laser with a wavelength of 1030 nm and a second harmonic laser with a wavelength of 532 nm used in this embodiment are used as lasers having a transmittance of about 40% or more.
- the bonding layer 23 was peeled off using these lasers. Then, the trimming ability by each laser, that is, the state of the bonding layer 23 in the laser irradiation region was measured.
- FIGS. 16 and 17 are views showing the state of the bonding layer 23 in the laser irradiation region in the first laser selection test, FIG. 16 using the YAG laser, and FIG. 17 using the second harmonic laser used in this embodiment. Shows the case.
- FIG. 16 when the bonding layer 23 is trimmed using a YAG laser, streak-like cracks (so-called microcracks (see symbol K in FIG. 16)) are generated along the width direction of the trimming line T. As a result.
- the subsequent braking process is performed in a state where microcracks have occurred, the wafer bonded body 60 cannot be cut along the desired contour line M, resulting in a large number of defective piezoelectric vibrators 1 being generated. . Note that the trimming width in FIG.
- the trimming line T does not generate the above-described microcracks, and it can be seen that the trimming state is satisfactory. This is because by using the second harmonic laser that emits light of the absorption band wavelength of the bonding layer 23, all the output of the laser light is absorbed and heated by the bonding layer 23, so that the bonding layer 23 quickly melts. It is considered that the bonding layer 23 in the laser light irradiation region contracted outward from the laser light irradiation region.
- the second harmonic laser as the first laser 87 for performing the trimming step (S94)
- the desired trimming line T in which the bonding layer 23 on the contour line M is completely peeled is formed. Can do. Therefore, in the subsequent braking step (S103), the wafer bonded body 60 can be cut into a desired size.
- this inventor performed the 2nd laser selection test for selecting the 2nd laser 88 used for the scribe process (S95) mentioned above. Specifically, the inventor of the present application irradiates the surface layer of the glass substrate with a plurality of lasers having different wavelengths to form scribe lines on the surface layer of the glass substrate. And the quality of the formed scribe line, the time spent to form the scribe line, the cost, etc. were measured.
- Table 1 shows the quality, speed, equipment cost, and overall evaluation based on these test results when a scribe line is formed using a plurality of lasers having different wavelengths.
- the laser light is completely absorbed in the surface layer portion of the glass substrate.
- a desired scribe line could be formed on the surface layer portion of the substrate. That is, since generation of chipping and debris and scribe lines with good linearity can be formed, the wafer bonded body 60 can be cut to a desired size in the subsequent braking step (S103).
- the oscillator 100 is configured by configuring the piezoelectric vibrator 1 as an oscillator electrically connected to the integrated circuit 101.
- the oscillator 100 includes a substrate 103 on which an electronic component 102 such as a capacitor is mounted. On the substrate 103, the above-described integrated circuit 101 for the oscillator is mounted, and the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 101.
- the electronic component 102, the integrated circuit 101, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).
- the piezoelectric vibrating piece 5 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 5 and input to the integrated circuit 101 as an electric signal.
- the input electrical signal is subjected to various processes by the integrated circuit 101 and is output as a frequency signal.
- the piezoelectric vibrator 1 functions as an oscillator.
- an RTC real-time clock
- a function for controlling the time, providing a time, a calendar, and the like can be added.
- the quality of the oscillator 100 itself can be improved in the same manner. In addition to this, it is possible to obtain a highly accurate frequency signal that is stable over a long period of time.
- the portable information device 110 having the above-described piezoelectric vibrator 1 will be described as an example of the electronic device.
- the portable information device 110 according to the present embodiment is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the related art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen.
- the portable information device 110 includes the piezoelectric vibrator 1 and a power supply unit 111 for supplying power.
- the power supply unit 111 is made of, for example, a lithium secondary battery.
- the power supply unit 111 includes a control unit 112 that performs various controls, a clock unit 113 that counts time, a communication unit 114 that communicates with the outside, a display unit 115 that displays various types of information, A voltage detection unit 116 that detects the voltage of the functional unit is connected in parallel.
- the power unit 111 supplies power to each functional unit.
- the control unit 112 controls each function unit to control operation of the entire system such as transmission and reception of voice data, measurement and display of the current time, and the like.
- the control unit 112 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area of the CPU.
- the clock unit 113 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1.
- the piezoelectric vibrator 1 When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 5 vibrates, and this vibration is converted into an electric signal by the piezoelectric characteristics of the crystal and is input to the oscillation circuit as an electric signal.
- the output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 112 via the interface circuit, and the current time, current date, calendar information, or the like is displayed on the display unit 115.
- the communication unit 114 has functions similar to those of a conventional mobile phone, and includes a radio unit 117, a voice processing unit 118, a switching unit 119, an amplification unit 120, a voice input / output unit 121, a telephone number input unit 122, and a ring tone generation unit. 123 and a call control memory unit 124.
- the wireless unit 117 exchanges various data such as audio data with the base station via the antenna 125.
- the audio processing unit 118 encodes and decodes the audio signal input from the radio unit 117 or the amplification unit 120.
- the amplifying unit 120 amplifies the signal input from the audio processing unit 118 or the audio input / output unit 121 to a predetermined level.
- the voice input / output unit 121 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.
- the ring tone generator 123 generates a ring tone in response to a call from the base station.
- the switching unit 119 switches the amplifying unit 120 connected to the voice processing unit 118 to the ringing tone generating unit 123 only when an incoming call is received, so that the ringing tone generated in the ringing tone generating unit 123 is transmitted via the amplifying unit 120.
- the call control memory unit 124 stores a program related to incoming / outgoing call control of communication.
- the telephone number input unit 122 includes, for example, a number key from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.
- the voltage detection unit 116 detects the voltage drop and notifies the control unit 112 of the voltage drop.
- the predetermined voltage value at this time is a value set in advance as a minimum voltage necessary for stably operating the communication unit 114, and is, for example, about 3V.
- the control unit 112 prohibits the operations of the radio unit 117, the voice processing unit 118, the switching unit 119, and the ring tone generation unit 123. In particular, it is essential to stop the operation of the wireless unit 117 with high power consumption. Further, the display unit 115 displays that the communication unit 114 has become unusable due to insufficient battery power.
- the operation of the communication unit 114 can be prohibited by the voltage detection unit 116 and the control unit 112, and that effect can be displayed on the display unit 115.
- This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 115.
- the function of the communication part 114 can be stopped more reliably by providing the power supply cutoff part 126 that can selectively cut off the power of the part related to the function of the communication part 114.
- the portable information device 110 of the present embodiment since the high-quality piezoelectric vibrator 1 is provided, the quality of the portable information device itself can be improved as well. In addition to this, it is possible to display highly accurate clock information that is stable over a long period of time.
- the radio timepiece 130 of this embodiment includes the piezoelectric vibrator 1 electrically connected to the filter unit 131, and receives a standard radio wave including timepiece information to accurately It is a clock with a function of automatically correcting and displaying the correct time.
- a standard radio wave including timepiece information to accurately It is a clock with a function of automatically correcting and displaying the correct time.
- transmitting stations transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves.
- Long waves such as 40 kHz or 60 kHz have the property of propagating the surface of the earth and the property of propagating while reflecting the ionosphere and the surface of the earth, so the propagation range is wide, and the above two transmitting stations cover all of Japan. is doing.
- the antenna 132 receives a long standard wave of 40 kHz or 60 kHz.
- the long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave.
- the received long standard wave is amplified by the amplifier 133 and filtered and tuned by the filter unit 131 having the plurality of piezoelectric vibrators 1.
- the piezoelectric vibrator 1 in this embodiment includes crystal vibrator portions 138 and 139 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency described above.
- the filtered signal having a predetermined frequency is detected and demodulated by the detection and rectification circuit 134. Subsequently, the time code is taken out via the waveform shaping circuit 135 and counted by the CPU 136.
- the CPU 136 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 137, and accurate time information is displayed. Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator units 138 and 139 are preferably vibrators having the tuning fork type structure described above.
- the frequency of the long standard radio wave is different overseas.
- a standard radio wave of 77.5 KHz is used. Accordingly, when the radio timepiece 130 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.
- the radio-controlled timepiece 130 of the present embodiment since the high-quality piezoelectric vibrator 1 is provided, the quality of the radio-controlled timepiece itself can be improved in the same manner. In addition to this, it is possible to count time stably and with high accuracy over a long period of time.
- the tuning fork type piezoelectric vibrating piece 5 has been described as an example, but is not limited to the tuning fork type.
- it may be a thickness sliding vibration piece.
- the scribe line M ′ is formed on the outer end surface 50 b of the lid substrate wafer 50 in the cutting step, while the cutting blade 70 is pressed from the outer end surface 40 b of the base substrate wafer 40.
- the scribe line M ′ may be formed on the outer end surface 40 b of the base substrate wafer 40, while the cutting blade 70 may be pressed from the outer end surface 50 b of the lid substrate wafer 50.
- the recess 3a may be formed in the base substrate wafer 40, or the recess 3a may be formed in both the wafers 40 and 50, respectively.
- the first laser and the second laser described above are merely examples, and can be appropriately selected depending on the material.
- the bonding layer 23 must be continuously formed on both the wafers 40 and 50 in order to ensure electrical continuity in the bonding step (S60). It is not necessary to bond both the wafers 40 and 50 in a state where the bonding layer 23 is formed over the entire bonding surface of both the wafers 40 and 50. That is, in the above-described embodiment, the case where the bonding layer 23 on the contour line M is collectively peeled from both the wafers 40 and 50 in the trimming step (S94) has been described, but is unnecessary prior to the bonding step (S60). It is also possible to perform a patterning process for removing the bonding layer 23 in advance.
- the bonding layer 23 on the contour line M is patterned, the bonding layer 23 is removed at predetermined intervals, and the bonding layer 23 has a single gap. It does not matter if it is connected only by the part.
- the bonding layer 23 is removed in advance before the bonding step (S60)
- the working time of the trimming step (S94) can be shortened and the working efficiency can be improved.
- the number of packages taken out as non-defective products from the wafer bonded body can be increased, and the yield can be improved.
Abstract
Description
しかしながら、ブレードによる切断方法では、ブレードの幅を考慮した切断代をキャビティ間に設ける必要があるため、1枚のウエハ接合体から取り出せる圧電振動子の数が少ないこと、また切断時におけるチッピングの発生、切断面が粗いこと等の問題があった。また、加工速度が遅いため、生産効率が悪いという問題もあった。
しかしながら、上述の方法では、スクライブラインに無数のチッピングが発生するため、ウエハが割れやすく、また切断面の表面精度も粗くなるという問題がある。
その結果、最悪の場合にはキャビティと外部とが連通してキャビティ内の気密を保てなくなるという問題がある。これらの製品は、不良品として扱われるため、1枚のウエハ接合体から取り出される良品の数が減少し、歩留まりが低下するという問題がある。
本発明に係る接合ガラスの切断方法は、複数のガラス基板の接合面同士が接合材料を介して接合されてなる接合ガラスを、切断予定線に沿って切断する接合ガラスの切断方法であって、前記接合材料の吸収帯域波長の光を照射する第1レーザーを前記切断予定線に沿って照射して、前記切断予定線上の前記接合材料を前記接合面から剥離する第1レーザー照射工程と、前記接合ガラスの吸収帯域波長の光を照射する第2レーザーを前記切断予定線に沿って照射して、前記接合ガラスの前記一方の面に溝を形成する第2レーザー照射工程と、前記接合ガラスの前記切断予定線に対して割断応力を加えることで、前記切断予定線に沿って前記接合ガラスを切断する切断工程とを有することを特徴としている。
特に、第2レーザー照射工程に先立って切断予定線上の接合材料を剥離しておくことで、切断時に接合ガラスの厚さ方向へのクラック進行を促進するとともに、に接合ガラスの面方向へのクラック進行を防ぐことができる。したがって、接合ガラスが切断予定線に沿ってスムーズに切断されることになる。これにより、切断面の表面精度を向上させることができるとともに、切断時に接合ガラスの割れ等を防ぎ、接合ガラスを所望のサイズに切断することができる。
この構成によれば、金属材料を介してガラス基板同士を陽極接合することで、接着剤等でガラス基板同士を接合した場合に比べて、経時劣化や衝撃等によるずれや、接合ガラスの反り等を防ぎ、ガラス基板同士を強固に接合することができる。
特に、第1レーザー照射工程において、波長が532nmの第1レーザーを用いることで、レーザー光の出力が全て接合材料で吸収され加熱されるため、接合材料が速やかに溶融し、レーザー光の照射領域の接合材料がレーザー光の照射領域より外側へ収縮する。これにより、切断予定線上における接合材料を良好に剥離することができる。
この構成によれば、ソーダ石灰ガラスからなるガラス基板に対して、波長が266nmの第2レーザーを照射することで、接合ガラスの表層部分においてレーザー光が完全吸収されることになり、接合ガラスの表層部分に所望の溝を形成することができた。すなわち、チッピングやデブリの発生が少なく、直線性が良好な溝を形成することができるので、その後の切断工程において、接合ガラスを所望のサイズに切断することができる。
この構成によれば、接合ガラスの他方の面から溝に沿って割断応力を加えることで、接合ガラスをよりスムーズ、かつ容易に切断することができるため、より良好な切断面を得ることができる。
この構成によれば、第1レーザー照射工程において、第1レーザーによって剥離する接合材料の面積を減少させることができる。これにより、第1レーザー照射工程の作業時間を短縮して、作業効率を向上させることが可能である。
この構成によれば、上記本発明の接合ガラスの切断方法を用いてガラス基板を切断することで、切断時に接合ガラスの厚さ方向へのクラック進行を促進するとともに、に接合ガラスの面方向へのクラック進行を防ぐことができる。したがって、切断時にガラス基板がパッケージ形成領域毎の切断予定線に沿ってスムーズに切断されることになる。これにより、切断面の表面精度を向上させることができるとともに、切断時にガラス基板の割れ等を防ぎ、ガラス基板を所望のサイズに切断することができる。
これにより、キャビティの気密が確保することができ、信頼性の高いパッケージを提供することができる。したがって、良品として取り出されるパッケージの数を増加することができ、歩留まりを向上させることができる。
この構成によれば、切断されたパッケージを取り出す際に、パッケージを取り出すための器具がパッケージの角部に接触した場合であっても、チッピングの発生を抑制することができるので、パッケージを良品の状態で取り出すことができる。
なお、面取り部は、第2レーザーにより溝を形成した後、溝(切断予定線)に沿って切断することで自動的に形成することができるので、切断後のパッケージにそれぞれ面取り部を形成する場合に比べて迅速、かつ容易に面取り部を形成することができる。その結果、作業効率を向上させることができる。
さらに、このように溝に沿って接合ガラスを切断することで、パッケージの切断面の表面精度を向上させ、信頼性の高いパッケージを提供することができる。
この構成によれば、キャビティ内の気密性を確保し、振動特性に優れた圧電振動子を提供することができる。
また、本発明のパッケージの製造方法及びパッケージによれば、上記本発明の接合ガラスの切断方法を用いてガラス基板を切断することで、キャビティの気密が確保することができ、信頼性の高いパッケージを提供することができる。したがって、良品として取り出されるパッケージの数を増加することができ、歩留まりを向上させることができる。
また、本発明に係る圧電振動子によれば、キャビティ内の気密性を確保し、振動特性に優れた信頼性の高い圧電振動子を提供することができる。
本発明に係る発振器、電子機器及び電波時計においては、上述した圧電振動子を備えているので、圧電振動子と同様に信頼性の高い製品を提供することができる。
(圧電振動子)
図1は、本実施形態における圧電振動子の外観斜視図であり、図2は圧電振動子の内部構成図であって、リッド基板を取り外した状態で圧電振動片を上方から見た図ある。また、図3は図2に示すA-A線に沿った圧電振動子の断面図であり、図4は圧電振動子の分解斜視図である。
図1~4に示すように、圧電振動子1は、ベース基板2とリッド基板3とで2層に積層された箱状に形成されており、内部のキャビティC内に圧電振動片5が収納された表面実装型の圧電振動子1である。そして、圧電振動片5とベース基板2の外側に設置された外部電極6,7とが、ベース基板2を貫通する一対の貫通電極8,9によって電気的に接続されている。
この凹部3aは、ベース基板2及びリッド基板3が重ね合わされたときに、圧電振動片5を収容するキャビティCを形成する。そして、リッド基板3は、凹部3aをベース基板2側に対向させた状態でベース基板2に対して後述する接合層(接合材料)23を介して陽極接合されている。なお、リッド基板3の上部周縁には、圧電振動子1の製造工程の後述するスクライブ工程時において、リッド基板3の角部が面取りされた面取り部90が形成されている。
この圧電振動片5は、平行に配置された一対の振動腕部24,25と、一対の振動腕部24,25の基端側を一体的に固定する基部26とからなる平面視略コの字型で、一対の振動腕部24,25の外表面上には、振動腕部24,25を振動させる図示しない一対の第1の励振電極と第2の励振電極とからなる励振電極と、第1の励振電極及び第2の励振電極に電気的に接続された一対のマウント電極とを有している(何れも不図示)。
上述した芯材部31は、金属材料により円柱状に形成された導電性の芯材であり、筒体32と同様に両端が平坦で、かつベース基板2の厚みと略同じ厚さとなるように形成されている。
なお、貫通電極8,9は、導電性の芯材部31を通して電気導通性が確保されている。
次に、上述した圧電振動子の製造方法について、図5に示すフローチャートを参照しながら説明する。
初めに、図5に示すように、圧電振動片作製工程を行って図1~4に示す圧電振動片5を作製する(S10)。また、圧電振動片5を作製した後、共振周波数の粗調を行っておく。なお、共振周波数をより高精度に調整する微調に関しては、マウント後に行う。
図6は、圧電振動片をキャビティ内に収容した状態で、ベース基板用ウエハとリッド基板用ウエハとが陽極接合されたウエハ接合体の分解斜視図である。
次に、図5,6に示すように、後にリッド基板3となるリッド基板用ウエハ50を、陽極接合を行う直前の状態まで作製する第1のウエハ作製工程を行う(S20)。具体的には、ソーダ石灰ガラスを所定の厚さまで研磨加工して洗浄した後に、エッチング等により最表面の加工変質層を除去した円板状のリッド基板用ウエハ50を形成する(S21)。次いで、リッド基板用ウエハ50の内側端面50a(図6における下面)に、エッチング等により行列方向にキャビティC用の凹部3aを複数形成する凹部形成工程を行う(S22)。
次に、後述するベース基板用ウエハ40との間の気密性を確保するために、ベース基板用ウエハ40との接合面となるリッド基板用ウエハ50の内側端面50a側を少なくとも研磨する研磨工程(S23)を行い、内側端面50aを鏡面加工する。以上により、第2のウエハ作成工程(S20)が終了する。
次に、上記工程と同時或いは前後のタイミングで、後にベース基板2となるベース基板用ウエハ40を、陽極接合を行う直前の状態まで作製する第1のウエハ作製工程を行う(S30)。まず、ソーダ石灰ガラスを所定の厚さまで研磨加工して洗浄した後に、エッチング等により最表面の加工変質層を除去した円板状のベース基板用ウエハ40を形成する(S31)。次いで、例えばプレス加工等により、ベース基板用ウエハに一対の貫通電極8,9を配置するためのスルーホール21,22を複数形成するスルーホール形成工程を行う(S32)。具体的には、プレス加工等によりベース基板用ウエハ40の一方の面から凹部を形成した後、ベース基板用ウエハ40の他方の面側から研磨することで、凹部を貫通させ、スルーホール21,22を形成することができる。
図7は、ウエハ接合体の個片化工程の手順を示すフローチャートである。また、図8~13はウエハ接合体の断面図であり、個片化工程を説明するための工程図である。
周波数の微調が終了後、接合されたウエハ接合体60を切断して個片化する個片化工程を行う(S90)。
個片化工程(S90)では、図7,8に示すように、まずUVテープ80及びリングフレーム81を用いて、ウエハ接合体60を保持するためのマガジン82を作成する(S91)。リングフレーム81は、その内径がウエハ接合体60の直径よりも大径に形成されたリング状の部材であり、厚さがウエハ接合体60と同等に形成されている。また、UVテープ80はポリオレフィンからなるシート材にアクリル系の粘着剤が塗布されたものであり、具体的には電気化学工業製のUHP-1525M3や、リンテック製のD510T等が好適に用いられている。また、UVテープのシート材の厚さは、170μm程度のものを用いることが好ましい。シート材の厚さが170μmより薄いUVテープを用いると、後述するブレーキング工程(S103)において、ウエハ接合体60とともにUVテープ80が切断されてしまう虞があるため好ましくない。
ここで、図9,14に示すように、リッド基板用ウエハ50とベース基板用ウエハ40とを接合している接合層23を剥離するトリミング工程(第1レーザー照射工程)を行う(S94)。トリミング工程(S94)では、接合層23の吸収帯域波長の光を出射するレーザー、例えば波長が532nmの第2高調波レーザーからなる第1レーザー87を用い、レーザー光R1の照射領域の接合層23を溶融させる。この場合、第1レーザー87から出射されたレーザー光R1は、ビームスキャナ(ガルバノメーター)によって反射された後、Fθレンズを介して集光される。そして、集光されたレーザー光R1をウエハ接合体60におけるリッド基板用ウエハ50の外側端面50b側から照射しながら、レーザー光R1とウエハ接合体60とを平行に相対移動させる。具体的には、各キャビティCを仕切る隔壁上、すなわち圧電振動子1の輪郭線(切断予定線)M(図6参照)に沿って第1レーザー87を走査する。
なお、トリミング工程(S94)におけるレーザー光R1のスポット径は、例えば10μm以上30μm以下程度が好ましく、本実施形態では20μm程度になるように設定されている。また、トリミング工程(S94)のその他の条件としては、例えば第1レーザー87の加工点平均出力が1.0W、周波数変調が20kHz、走査速度が200mm/sec程度に設定することが好ましい。
これにより、輪郭線M上の接合層23がレーザー光R1を吸収して加熱されることで、接合層23が溶融し、レーザー光R1の照射領域(輪郭線M)より外側へ収縮する。その結果、両ウエハ40,50の接合面(リッド基板用ウエハ50の内側端面50a及びベース基板用ウエハ40の内側端面40a)上に、接合面から接合層23が剥離されてなるトリミングラインTが形成される。
切断工程(S100)では、まず図11に示すように、リングフレーム81の他方の面81cに、貫通孔81bを塞ぐようにセパレーター83を貼り付ける(S101)。なお、セパレーター83の材料としては、ポリエチレンテレフタレートフィルム(いわゆる、PET材)、例えば東レ製のルミラーT60(20μmt~60μmt)が好適に用いられている。これにより、ウエハ接合体60は、UVテープ80とセパレーター83とにより挟持された状態で、リングフレーム81の貫通孔81b内に保持される。そして、この状態でウエハ接合体60をブレーキング装置内に搬送する(S102)。
以上により、互いに陽極接合されたベース基板2とリッド基板3との間に形成されたキャビティC内に圧電振動片5が封止された、図1に示す2層構造式表面実装型の圧電振動子1を一度に複数製造することができる。
この構成によれば、ブレーキング工程(S103)に先立って、リッド基板用ウエハ50の表層部分に輪郭線Mに沿ってスクライブラインM’を形成することで、従来のようなブレードによる切断方法に比べて、切断代が非常に小さい、切断速度が速い、切断面の表面精度が良好、チッピングの発生がない等のメリットがある。また、ウエハ接合体60の内部にダメージ層が形成される虞もないので、ウエハ接合体60の切断時におけるウエハ接合体60の面方向へのクラックの発生や、切断後における圧電振動子1の機械的耐久性が低下することがない。
したがって、一枚のウエハ接合体60から良品として取り出される圧電振動子1の数を増加することができ、歩留まりを向上させることができる。
この構成によれば、ピックアップ工程(S110)において、個片化された圧電振動子1を取り出す際に、圧電振動子1を取り出すための器具が、圧電振動子1の角部に接触した場合であっても、チッピングの発生を抑制することができるので、圧電振動子1を容易に取り出すことができる。
また、面取り部90は、第2レーザー88によりスクライブラインM’を形成した後、スクライブラインM’に沿って切断することで自動的に形成することができるので、切断後の圧電振動子1にそれぞれ面取り部90を形成する場合に比べて迅速、かつ容易に面取り部90を形成することができる。その結果、作業効率を向上させることができる。
さらに、このようにスクライブラインM’に沿ってウエハ接合体60を切断することで、圧電振動子1の切断面の切断精度を向上させ、信頼性の高い圧電振動子1を提供することができる。
ここで、本願発明者は、トリミング工程に最適な第1レーザーを選定するために、第1レーザー選定試験を行った。図15は波長(nm)に対する透過率(%)の関係を示したグラフである。
まず、本実施形態のトリミング工程では、上述したように両ウエハ40,50(図9参照)から接合層23を剥離するため、リッド基板用ウエハ50を透過して接合層23まで到達するレーザーを用いる必要がある。そのため、本試験では図15に示すように、透過率が40%程度以上あるレーザーとして、波長1030nmのYAG(Yttrium Aluminum Garnet)レーザー、及び本実施形態で用いた波長532nmの第2高調波レーザーを用い、これらのレーザーにより接合層23を剥離した。そして、各レーザーによるトリミング能力、すなわちレーザー照射領域の接合層23の状態を測定した。
図16に示すように、YAGレーザーを用いて接合層23のトリミングを行うと、トリミングラインTの幅方向に沿って筋状のクラック(いわゆる、マイクロクラック(図16中符号K参照))が発生する結果となった。マイクロクラックが発生した状態で、その後のブレーキング工程を行うと、ウエハ接合体60を所望の輪郭線Mに沿って切断できず、不良品となる圧電振動子1が多く発生する結果となった。なお、図16におけるトリミング幅は124μmに設定した。
これに対して、図17に示すように、第2高調波レーザーを用いると、トリミングラインTには上述したマイクロクラックの発生はなく、良好なトリミング状態であることがわかる。これは、接合層23の吸収帯域波長の光を出射する第2高調波レーザーを用いることで、レーザー光の出力が全て接合層23で吸収され加熱されるため、接合層23が速やかに溶融し、レーザー光の照射領域の接合層23がレーザー光の照射領域より外側へ収縮したものと考えられる。
次に、本願発明者は、上述したスクライブ工程(S95)に用いる第2レーザー88を選定するための第2レーザー選定試験を行った。具体的に、本願発明者は、波長の異なる複数のレーザーをガラス基板の表層にそれぞれ照射し、ガラス基板の表層にスクライブラインを形成した。そして、形成されたスクライブラインの品質や、スクライブラインを形成するために費やした時間、コスト等を測定した。
<実施例1>
UV-Deepレーザー
波長 266nm
<比較例1>
ArFエキシマレーザー
波長 193nm
<比較例2>
KrFエキシマレーザー
波長 248nm
<比較例3>
UV-Deepレーザー
波長 355nm
<比較例4>
第2高調波レーザー(グリーンレーザー)
波長 532nm
<比較例5>
YAGレーザー
波長 1030nmor1064nm
<比較例6>
CO2レーザー
波長 10.6μm
また、波長が355nmのUV-Deepレーザーを用いた場合(比較例3)には、チッピングが多く発生するとともに、直線性が悪く、スクライブラインが蛇行してしまうという結果が得られた。
そして、グリーンレーザーやYAGレーザー、CO2レーザーを用いた場合(比較例4~6)には、図15に示すように、ガラス基板に対する透過率が大きいため、ガラス基板にレーザーが吸収されずに透過してしまう。その結果、ガラス基板の表層に所望のスクライブラインを形成することができなかった。
次に、本発明に係る発振器の一実施形態について、図18を参照しながら説明する。
本実施形態の発振器100は、図18に示すように、圧電振動子1を、集積回路101に電気的に接続された発振子として構成したものである。この発振器100は、コンデンサ等の電子部品102が実装された基板103を備えている。基板103には、発振器用の上述した集積回路101が実装されており、この集積回路101の近傍に、圧電振動子1が実装されている。これら電子部品102、集積回路101及び圧電振動子1は、図示しない配線パターンによってそれぞれ電気的に接続されている。なお、各構成部品は、図示しない樹脂によりモールドされている。
また、集積回路101の構成を、例えば、RTC(リアルタイムクロック)モジュール等を要求に応じて選択的に設定することで、時計用単機能発振器等の他、当該機器や外部機器の動作日や時刻を制御したり、時刻やカレンダー等を提供したりする機能を付加することができる。
次に、本発明に係る電子機器の一実施形態について、図19を参照して説明する。なお電子機器として、上述した圧電振動子1を有する携帯情報機器110を例にして説明する。始めに本実施形態の携帯情報機器110は、例えば、携帯電話に代表されるものであり、従来技術における腕時計を発展、改良したものである。外観は腕時計に類似し、文字盤に相当する部分に液晶ディスプレイを配し、この画面上に現在の時刻等を表示させることができるものである。また、通信機として利用する場合には、手首から外し、バンドの内側部分に内蔵されたスピーカ及びマイクロフォンによって、従来技術の携帯電話と同様の通信を行うことが可能である。しかしながら、従来の携帯電話と比較して、格段に小型化及び軽量化されている。
無線部117は、音声データ等の各種データを、アンテナ125を介して基地局と送受信のやりとりを行う。音声処理部118は、無線部117又は増幅部120から入力された音声信号を符号化及び複号化する。増幅部120は、音声処理部118又は音声入出力部121から入力された信号を、所定のレベルまで増幅する。音声入出力部121は、スピーカやマイクロフォン等からなり、着信音や受話音声を拡声したり、音声を集音したりする。
なお、呼制御メモリ部124は、通信の発着呼制御に係るプログラムを格納する。また、電話番号入力部122は、例えば、0から9の番号キー及びその他のキーを備えており、これら番号キー等を押下することにより、通話先の電話番号等が入力される。
なお、通信部114の機能に係る部分の電源を、選択的に遮断することができる電源遮断部126を備えることで、通信部114の機能をより確実に停止することができる。
本実施形態の電波時計130は、図20に示すように、フィルタ部131に電気的に接続された圧電振動子1を備えたものであり、時計情報を含む標準の電波を受信して、正確な時刻に自動修正して表示する機能を備えた時計である。
日本国内には、福島県(40kHz)と佐賀県(60kHz)とに、標準の電波を送信する送信所(送信局)があり、それぞれ標準電波を送信している。40kHz若しくは60kHzのような長波は、地表を伝播する性質と、電離層と地表とを反射しながら伝播する性質とを併せもつため、伝播範囲が広く、上述した2つの送信所で日本国内を全て網羅している。
以下、電波時計130の機能的構成について詳細に説明する。
アンテナ132は、40kHz若しくは60kHzの長波の標準電波を受信する。長波の標準電波は、タイムコードと呼ばれる時刻情報を、40kHz若しくは60kHzの搬送波にAM変調をかけたものである。受信された長波の標準電波は、アンプ133によって増幅され、複数の圧電振動子1を有するフィルタ部131によって濾波、同調される。
本実施形態における圧電振動子1は、上述した搬送周波数と同一の40kHz及び60kHzの共振周波数を有する水晶振動子部138、139をそれぞれ備えている。
続いて、波形整形回路135を介してタイムコードが取り出され、CPU136でカウントされる。CPU136では、現在の年、積算日、曜日、時刻等の情報を読み取る。読み取られた情報は、RTC137に反映され、正確な時刻情報が表示される。
搬送波は、40kHz若しくは60kHzであるから、水晶振動子部138、139は、上述した音叉型の構造を持つ振動子が好適である。
例えば、上述した実施形態では、音叉型の圧電振動片5を例に挙げて説明したが、音叉型に限られるものではない。例えば、厚み滑り振動片としても構わない。
さらに、ベース基板用ウエハ40に凹部3aを形成してもよく、両ウエハ40,50に凹部3aをそれぞれ形成してもよい。
また、接合層23は、接合工程(S60)での電気的導通を確保するために、両ウエハ40,50上において連続的に形成されていなければならないが、必ずしも上述した実施形態のように、両ウエハ40,50の接合面の全域に接合層23を形成した状態で両ウエハ40,50を接合する必要はない。すなわち、上述した実施形態では、トリミング工程(S94)において輪郭線M上の接合層23を一括して両ウエハ40,50から剥離する場合について説明したが、接合工程(S60)に先立って、不要な接合層23を予め除去するパターニング工程を行うことも可能である。具体的には、図22に示すように、接合工程(S60)に先立って、輪郭線M上の接合層23をパターニングし、接合層23を所定間隔毎に除去し、接合層23間が一部のみで接続されるようにしておいても構わない。
このように、接合工程(S60)の前に予め不要な接合層23を除去しておくことで、接合後のトリミング工程(S94)において、第1レーザー87によって剥離する接合層23の面積を減少させることができる。これにより、トリミング工程(S94)の作業時間を短縮して、作業効率を向上させることが可能である。
Claims (11)
- 複数のガラス基板の接合面同士が接合材料を介して接合されてなる接合ガラスを、切断予定線に沿って切断する接合ガラスの切断方法であって、
前記接合材料の吸収帯域波長の光を照射する第1レーザーを前記切断予定線に沿って照射して、前記切断予定線上の前記接合材料を前記接合面から剥離する第1レーザー照射工程と、
前記接合ガラスの吸収帯域波長の光を照射する第2レーザーを前記切断予定線に沿って照射して、前記接合ガラスの前記一方の面に溝を形成する第2レーザー照射工程と、
前記接合ガラスの前記切断予定線に対して割断応力を加えることで、前記切断予定線に沿って前記接合ガラスを切断する切断工程とを有することを特徴とする接合ガラスの切断方法。 - 請求項1記載の接合ガラスの切断方法であって、
前記接合材料は、導電性を有する金属材料からなり、
前記接合ガラスは、前記複数のガラス基板の前記接合面同士が陽極接合され、
前記第1レーザー照射工程では、前記第1レーザーの波長を532nmに設定することを特徴とする接合ガラスの切断方法。 - 請求項1または請求項2記載の接合ガラスの切断方法であって、
前記ガラス基板は、ソーダ石灰ガラスからなり、
前記第2レーザー照射工程では、前記第2レーザーの波長を266nmに設定することを特徴とする接合ガラスの切断方法。 - 請求項1ないし請求項3の何れか1項に記載の接合ガラスの切断方法であって、
前記切断工程では、前記接合ガラスの他方の面から前記溝に沿って割断応力を加えることを特徴とする接合ガラスの切断方法。 - 請求項1ないし請求項4の何れか1項に記載の接合ガラスの切断方法であって、
前記接合ガラスは、前記切断予定線上の一部のみに前記接合材料を配置して接合され、
前記第1レーザー照射工程では、前記切断予定線上に配置された前記接合材料のみに前記第1レーザーの光を照射することを特徴とする接合ガラスの切断方法。 - 接合材料を介して互いに接合された複数のガラス基板と、前記複数のガラス基板の内側に形成されたキャビティと、を備え、前記キャビティ内に電子部品を封入可能なパッケージの製造方法であって、
請求項1ないし請求項5の何れか1項に記載の接合ガラスの切断方法を用いて、前記パッケージの形成領域毎に前記複数のガラス基板を切断することを特徴とするパッケージの製造方法。 - 接合材料を介して互いに接合された複数のガラス基板と、前記複数のガラス基板の内側に形成されたキャビティと、を備え、前記キャビティ内に電子部品が封入されたパッケージであって、
前記パッケージは、請求項1ないし請求項5の何れか1項に記載の接合ガラスの切断方法を用いて切断されてなり、
前記パッケージにおける前記第2レーザーの照射面側の外周縁部には、前記第2レーザーによって形成された前記溝が割断されてなる面取り部を有していることを特徴とするパッケージ。 - 請求項7記載のパッケージの前記キャビティ内に、圧電振動片が気密封止されてなることを特徴とする圧電振動子。
- 請求項8に記載の前記圧電振動子が、発振子として集積回路に電気的に接続されていることを特徴とする発振器。
- 請求項8に記載の前記圧電振動子が、計時部に電気的に接続されていることを特徴とする電子機器。
- 請求項8記載の前記圧電振動子が、フィルタ部に電気的に接続されていることを特徴とする電波時計。
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CN2009801578711A CN102388000A (zh) | 2009-02-25 | 2009-02-25 | 接合玻璃的切断方法、封装件的制造方法、封装件、压电振动器、振荡器、电子设备及电波钟 |
JP2011501390A JPWO2010097908A1 (ja) | 2009-02-25 | 2009-02-25 | 接合ガラスの切断方法、パッケージの製造方法、パッケージ、圧電振動子、発振器、電子機器及び電波時計 |
TW98144505A TW201041199A (en) | 2009-02-25 | 2009-12-23 | Junction-glass cutting method, package manufacturing method, package, piezoelectric vibrator, oscillator, electronic device, and radio-controlled watch |
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