Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
  • G01M5/00—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
  • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
  • B82B3/0009—Forming specific nanostructures
  • B82B3/0014—Array or network of similar nanostructural elements
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y40/00—Manufacture or treatment of nanostructures
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02587—Structure
  • H01L21/0259—Microstructure
  • H01L21/02603—Nanowires
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/42—Piezoelectric device making
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/49—Method of mechanical manufacture
  • Y10T29/49002—Electrical device making
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/49—Method of mechanical manufacture
  • Y10T29/49002—Electrical device making
  • Y10T29/49005—Acoustic transducer
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/49—Method of mechanical manufacture
  • Y10T29/49002—Electrical device making
  • Y10T29/49007—Indicating transducer
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/49—Method of mechanical manufacture
  • Y10T29/49002—Electrical device making
  • Y10T29/49117—Conductor or circuit manufacturing
  • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/49—Method of mechanical manufacture
  • Y10T29/49002—Electrical device making
  • Y10T29/49117—Conductor or circuit manufacturing
  • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
  • Y10T29/49147—Assembling terminal to base

Definitions

• the field of the disclosure relates generally to sensor networks, and more specifically, to methods and systems relating to sensor networks that incorporate stretchable silicon.
• a sensor network in one embodiment, includes a stretchable silicon substrate and a plurality of nodes fabricated on the stretchable silicon substrate.
• the nodes include at least one each of an energy harvesting and storage element, a communication device, a sensing device, and a processor.
• the nodes are interconnected via interconnecting conductors.
• a method for fabricating a network includes stretching a silicon medium over a desired area, processing the stretched silicon medium to generate a number of nodes thereon, and utilizing conductive paths within the stretchable medium to redundantly interconnect the generated nodes to form the network.
• a network for monitoring a structure includes a stretchable silicon substrate, a plurality of sensors fabricated on the stretchable silicon substrate, at least one communication device fabricated on the stretchable silicon substrate, and at least one energy harvesting and storage element fabricated on the stretchable silicon substrate.
• the stretchable silicon substrate includes a plurality of conductive paths therein that interconnect the plurality of sensors, the at least one communication device, and the at least one energy harvesting and storage element.
• the network is configured for attachment across a structure, dispersing the sensors. Data from the sensors is communicated to an external device via the at least one communication device.
• Figure 1 is a system block diagram illustrating a sensor network fabricated using stretchable silicon in an advantageous embodiment.
• Figure 2 is a diagram illustrating a sensor network in another advantageous embodiment, that includes stretchable silicon interconnecting energy harvesting and storage elements, wireless and wired communication devices, micro-sensors, and network management processors.
• Figure 3 is a flowchart illustrating a method for fabricating a sensor network using stretchable silicon in another advantageous embodiment.
• Figure 1 is a block diagram of a sensor network 10 that is based on stretchable silicon.
• three nodes have been fabricated on a stretchable silicon substrate.
• the three nodes include a power supply node 12, a processor node 14, and a sensor node 16.
• the nodes are interconnected via interconnecting conductors 20, 22, and 24 formed in the stretchable silicon substrate.
• the power supply node 12 may be an energy harvesting and storage element.
• power supply node may be a piezo-electric generator that is integrated with silicon-based Nano/Micro-Electromechanical Systems (N/MEMS) In this embodiment, the combination is able to generate and store electrical power.
• the power supply node 12 may provide such power to both the processor node 14 and the sensor node 16.
• a plurality of power supply nodes 12 may be distributed across the stretchable silicon substrate providing power to nodes hosting such processing, sensing, or communication functions.
• the processor node 14 includes a processing function and may include an RF receiver and transmitter 30 for communicating with portions of the sensor node 16 that are capable of communicating wireless methods.
• the processor node 14 may further include processing capabilities for communicating via a digital vehicle network interface 40, for example.
• the embodiment of Figure 1 may include an RF-to digital inverter 32 and a digital-to-RF converter 34 facilitating communications between the vehicle network 40 and the sensor node 16 via the RF receiver/transmitter 30.
• the processor node 14 may be configured to manage and monitor the behavior of sensor network 10, including power generation and consumption, data acquisition, and communications both within the sensor network 10 and with external devices such as vehicle network 40.
• the sensor node 16 may have a wireless operating capability, though alternative embodiments are operable through wired operating capabilities. In both configurations, the sensor node 16 includes a sensor element 50 and a communication element 52.
• the sensor element 50 may include integrally formed signal conditioning circuitry or signal conditioning circuitry may be physically separated from the sensor element.
• the sensor node 16 as shown in Figure 1 is configured for wireless operation, similar to the processor node 14 described above.
• the stretchable silicon medium is utilized as a communications interconnect between the sensor node 16 and the processor node 14, as shown by the stretchable silicon interconnect 20.
• Stretchable silicon interconnect 22 is utilized in the illustrated embodiment to provide the power to the processor node 14 from the power supply node 12
• the stretchable silicon interconnect 24 is utilized in the illustrated embodiment to provide the power to the sensor node 14 from the power supply node 12.
• Figure 2 is an illustration of a sensor network 100 fabricated using stretchable silicon
• the network 100 includes a plurality of components that have been fabricated on the stretchable silicon 105.
• the components include, for example, energy harvesting and storage elements 110, communication devices 120, sensors 130, and network management processors 140.
• the communications devices 120 may include both wireless and wired devices.
• the plurality of components are integrated on a medium of stretchable silicon 105, which provides multiple conductive paths 160 (interconnects) formed therein which provide, for example, conduction of electrical power from the energy harvesting and storage elements 110 to the communication devices 120, sensors 130, and network management processors 140.
• the conductive paths 160 also provide for at least some of the communications between the above listed components.
• the stretchable silicon 105 forms a portion of an autonomous network of wireless sensors.
• a high reliability results due to the redundancy built into the network 100 with stretchable silicon interconnects 160.
• the network 100 may utilize use alternative paths between the various network components to achieve reliable communications between the sensors 130 and the existing vehicle communication network.
• the illustrated network 100 has its own power source, energy harvesting and storage elements 110, the addition of such a network does not tax vehicle power systems.
• the stretchable silicon medium 105 is an excellent enabler because every node formed thereon can be converted into a component that provides a desired function. Examples include a processor function and miniature sensor nodes. In one embodiment, the nodes have a size of about 200 micrometers. In one embodiment, the stretchable silicon medium 105 is processed from a foundry-processed, monolithic silicon die, of a size between one centimeter and twenty centimeters and stretched over a larger area. The process results in a plurality of robust conductors that run between the various nodes that are fabricated on the medium 105.
• Network 100 resolves at least some of the prior problems that have been associated with weight and supportability of energy storage devices, complexity of interconnections among network nodes, manufacturability, mechanical connection of input/output signals, and scalability. More specifically, a system incorporating network 100 enables networked sensor coverage of large areas with multiple applications.
• One such application involves monitoring structural health of a structure where a plurality of the above mentioned sensors provide data to a processing element which can be queried by an external system.
• Other applications include the monitoring of air flow over aerodynamic surfaces utilizing applicable sensors fabricated on medium 105 and the monitoring of ice accretion and other hazardous conditions that may be encountered with the use of an aerospace structure.
• energy harvesting and storage elements 110 provide power to the other elements of network 100.
• a nano- piezoelectric generator effect is utilized within element 110 to convert mechanical stress into electrical current or voltage for powering the other components of network 100, including any sensors that may be fabricated on the medium 105.
• zinc oxide (ZnO) nano wires are utilized in network 100. These ZnO nano wires are grown using chemical synthesis on a substrate with any curvature and materials nature. These ZnO nanowire generators produce power on the order of milliwatts in an area that is about one square millimeter.
• a power output associated with such energy harvesting and storage elements 110 proportionally increases as the nanowire substrate area is expanded. Also, these devices are easily integrated with stretchable silicon based nano/micro electronics devices to develop robust Nano/Micro-Electro-Mechanical Systems (N/MEMS). In certain embodiments, the energy harvesting nodes of elements 110 incorporate capacitance-based or other energy storage components to meet the energy demands of the network 100.
• At least one embodiment incorporates wireless transceiver nodes allowing data to be transmitted to and from the network 100.
• Such embodiments are referred to as single chip transceivers based on silicon systems.
• One embodiment incorporates the stretchable silicon in the fabrication of transceiver integrated circuits including the development of RF and baseband components of wireless transceivers on a single die.
• Wireless transceiver nodes can be directly connected to external devices.
• Silicon offers a high level of integration and a low cost which is desirable for large scale manufacture, and also has the potential of reducing the power consumption. Lower power consumption allows for cheaper packaging materials such as plastic which greatly reduces the cost of a chip.
• bipolar and CMOS are the most popular process technologies. Bipolar technologies offer high speed and are most commonly used in analog applications. CMOS has a lower limit frequency but offers a high level of integration which is attractive for digital applications.
• the sensor nodes 130 form a network constructed with silicon based devices.
• the sensor nodes 130 may include sensors for structural health monitoring, temperature sensors, pressure sensors, vibration sensors, ice accretion sensors, dynamic air flow separation sensors, and other sensor types.
• the sensor nodes 130 include signal conditioning circuitry, providing an interface between the sensor nodes 130 and the communications devices 120 and/or an interface between the sensor nodes and network management processors 140.
• Network management processors 140 may monitor the network for active sensor nodes 130 and determine if they belong to the network. The power required by the communications device 120, sensor nodes 130 and the network management processors 140 is supplied, in various embodiments, by the energy harvesting and storage elements 110 described above.
• Figure 3 is a flowchart 200 further illustrating a method for fabricating a sensor network such as those described herein incorporating stretchable silicon.
• the method illustrated in the flowchart 200 includes stretching 202 a silicon medium over a desired area, processing 204 the stretched silicon medium to generate a number of nodes thereon, and utilizing 206 conductors within the stretchable medium to redundantly interconnect the generated nodes to form the network.
• processing 204 the stretched silicon medium may include generating one or more of an energy harvesting and storage element, a communication device, a sensing device, and a processor, while utilizing 206 conductors within the stretchable medium may include routing power from energy harvesting and storage elements to the various communication devices, sensing devices, and processors.
• Processing 204 the stretched silicon medium includes generating at least one communications device with a wireless communications capability. In another embodiment, processing 204 the stretched silicon medium includes generating at least one processor capable of communicating with an external network. As further described herein, the method described by flowchart 200 is useful for multiple applications, and therefore, processing 204 the stretched silicon medium may include, but is not limited to, generating sensors for structural health monitoring and management, generating ice accretion sensors, and generating sensors configured for sensing dynamic flow separation of the air surrounding the sensor.
• the stretchable silicon substrate is capable of being stretched out, for example, up to 100 times its original size.
• such a substrate may be attached across a relevant portion of the structure.
• sensors are able to sense changes in the environment, provide data to network processors such as network management processors 140 which in turn utilize communications devices 120 to communicate the sensor data to an external system.
• network processors such as network management processors 140 which in turn utilize communications devices 120 to communicate the sensor data to an external system.
• Examples of applications outside of structural health monitoring include dynamic flow separation of the surrounding air, and the monitoring of ice accretion on structures.
• the autonomous network of wireless sensors described herein accommodates the rigorous configuration control demands of aerospace applications and enhances sensor designs and construction methods suitable for installation in hostile environments.
• a wide range of temperature sensors, pressure sensors and flow sensors for harsh and demanding environments can be utilized in aircraft and aero engines where unique applications are desired.
• the described network has the capability of incorporating advanced data systems architectures that are necessary to communicate, store and process massive amounts of health management data from large numbers of diverse sensors.
• network 100 can be configured to perform as a portion of an Integrated Vehicle Health Management (IVHM) system that will provide real-time knowledge of structural, propulsion, thermal protection and other critical systems for optimal vehicle management and mission control.
• IVHM Integrated Vehicle Health Management
• on-board, real-time sensing systems are a critical component of a vehicle health management system.
• network 100 includes sensors that have an ability to withstand harsh aerospace operating environments, while also having minimal size, weight, and power requirements.

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• Aviation & Aerospace Engineering (AREA)
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• 2009
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