JP5568099B2 - ストレッチャブルシリコンが組み込まれたセンサネットワーク - Google Patents

ストレッチャブルシリコンが組み込まれたセンサネットワーク Download PDF

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Publication number
JP5568099B2
JP5568099B2 JP2011551078A JP2011551078A JP5568099B2 JP 5568099 B2 JP5568099 B2 JP 5568099B2 JP 2011551078 A JP2011551078 A JP 2011551078A JP 2011551078 A JP2011551078 A JP 2011551078A JP 5568099 B2 JP5568099 B2 JP 5568099B2
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Prior art keywords
sensor
network
node
silicon substrate
stretchable silicon
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English (en)
Japanese (ja)
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JP2012518183A (ja
JP2012518183A5 (enExample
Inventor
ジョン， エル． ヴィアン，
マイケル， エー． カッラレーロ，
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Boeing Co
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Boeing Co
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M5/00—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B82B3/0014—Array or network of similar nanostructural elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49007—Indicating transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49147—Assembling terminal to base

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
JP2011551078A 2009-02-19 2010-01-07 ストレッチャブルシリコンが組み込まれたセンサネットワーク Active JP5568099B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/389,196 2009-02-19
US12/389,196 US7948147B2 (en) 2009-02-19 2009-02-19 Sensor network incorporating stretchable silicon
PCT/US2010/020301 WO2010096209A1 (en) 2009-02-19 2010-01-07 Sensor network incorporating stretchable silicon

Publications (3)

Publication Number Publication Date
JP2012518183A JP2012518183A (ja) 2012-08-09
JP2012518183A5 JP2012518183A5 (enExample) 2012-12-27
JP5568099B2 true JP5568099B2 (ja) 2014-08-06

Family

ID=42060535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011551078A Active JP5568099B2 (ja) 2009-02-19 2010-01-07 ストレッチャブルシリコンが組み込まれたセンサネットワーク

Country Status (5)

Country Link
US (2) US7948147B2 (enExample)
EP (1) EP2399114B1 (enExample)
JP (1) JP5568099B2 (enExample)
CN (1) CN102326064B (enExample)
WO (1) WO2010096209A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8201773B1 (en) * 2008-07-02 2012-06-19 The United States Of America As Represented By Secretary Of The Navy Flexible self-erecting substructures for sensor networks
US8510234B2 (en) * 2010-01-05 2013-08-13 American Gnc Corporation Embedded health monitoring system based upon Optimized Neuro Genetic Fast Estimator (ONGFE)
FR2971054B1 (fr) * 2011-01-31 2014-01-17 Eads Europ Aeronautic Defence Dispositif de surveillance de l'integrite et de la sante d'une structure mecanique et procede de fonctionnement d'un tel dispositif
WO2015037350A1 (ja) * 2013-09-10 2015-03-19 株式会社村田製作所 センサ
US10022073B2 (en) * 2015-03-20 2018-07-17 Intel Corproation Wearable apparatus with a stretch sensor
US9838436B2 (en) * 2015-03-30 2017-12-05 Gulfstream Aerospace Corporation Aircraft data networks
EP3839032A1 (en) 2019-12-20 2021-06-23 Imec VZW A semiconductor cell culture device and a system for three-dimensional cell culture
US12492003B2 (en) 2021-08-27 2025-12-09 Goodrich Corporation Integrated ice protection with prognostics and health management

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849668A (en) * 1987-05-19 1989-07-18 Massachusetts Institute Of Technology Embedded piezoelectric structure and control
US5374011A (en) * 1991-11-13 1994-12-20 Massachusetts Institute Of Technology Multivariable adaptive surface control
US6420819B1 (en) * 1994-01-27 2002-07-16 Active Control Experts, Inc. Packaged strain actuator
US6404107B1 (en) * 1994-01-27 2002-06-11 Active Control Experts, Inc. Packaged strain actuator
US6831017B1 (en) * 2002-04-05 2004-12-14 Integrated Nanosystems, Inc. Catalyst patterning for nanowire devices
US6952042B2 (en) * 2002-06-17 2005-10-04 Honeywell International, Inc. Microelectromechanical device with integrated conductive shield
US6870236B2 (en) * 2003-05-20 2005-03-22 Honeywell International, Inc. Integrated resistor network for multi-functional use in constant current or constant voltage operation of a pressure sensor
US7231180B2 (en) * 2004-03-24 2007-06-12 Honeywell International, Inc. Aircraft engine sensor network using wireless sensor communication modules
JP4701451B2 (ja) * 2004-09-24 2011-06-15 独立行政法人物質・材料研究機構 炭化珪素膜で被覆された硫化亜鉛ナノケーブルおよびその製造方法
JP5031313B2 (ja) * 2005-11-01 2012-09-19 シャープ株式会社 外部環境ナノワイヤセンサおよび外部環境ナノワイヤセンサの製造方法
US7278319B2 (en) * 2005-11-10 2007-10-09 Honeywell International Inc. Pressure and temperature sensing element
US7276703B2 (en) * 2005-11-23 2007-10-02 Lockheed Martin Corporation System to monitor the health of a structure, sensor nodes, program product, and related methods
US20070125176A1 (en) * 2005-12-02 2007-06-07 Honeywell International, Inc. Energy harvesting device and methods
KR101074779B1 (ko) * 2005-12-29 2011-10-19 삼성에스디아이 주식회사 탄소나노튜브를 이용하는 반도체 전극, 그의 제조방법 및그를 포함하는 태양전지
US7834424B2 (en) * 2006-09-12 2010-11-16 The Board Of Trustees Of The Leland Stanford Junior University Extendable connector and network
KR20080064004A (ko) * 2007-01-03 2008-07-08 삼성전자주식회사 초음파 에너지를 이용한 ＺｎＯ 나노와이어의 제조방법
WO2008156606A2 (en) * 2007-06-12 2008-12-24 Adrian Pelkus Thin film piezoelectric wave power generation system

Also Published As

Publication number Publication date
US7948147B2 (en) 2011-05-24
US20100207487A1 (en) 2010-08-19
EP2399114B1 (en) 2016-08-10
JP2012518183A (ja) 2012-08-09
CN102326064A (zh) 2012-01-18
WO2010096209A1 (en) 2010-08-26
EP2399114A1 (en) 2011-12-28
US8966730B1 (en) 2015-03-03
CN102326064B (zh) 2014-10-15

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