WO2010095812A2 - 망간이 도핑된 나노결정의 제조방법 - Google Patents

망간이 도핑된 나노결정의 제조방법 Download PDF

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Publication number
WO2010095812A2
WO2010095812A2 PCT/KR2010/000066 KR2010000066W WO2010095812A2 WO 2010095812 A2 WO2010095812 A2 WO 2010095812A2 KR 2010000066 W KR2010000066 W KR 2010000066W WO 2010095812 A2 WO2010095812 A2 WO 2010095812A2
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WIPO (PCT)
Prior art keywords
manganese
nanocrystals
metal
doped
salt
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Ceased
Application number
PCT/KR2010/000066
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English (en)
French (fr)
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WO2010095812A3 (ko
Inventor
현택환
유정호
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SNU R&DB Foundation
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SNU R&DB Foundation
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Publication date
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Publication of WO2010095812A2 publication Critical patent/WO2010095812A2/ko
Publication of WO2010095812A3 publication Critical patent/WO2010095812A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G45/00—Compounds of manganese
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/86—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by NMR- or ESR-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Luminescent Compositions (AREA)

Abstract

본 발명에서는 공기 상에서 안정적이며 환경친화적인 금속염을 전구체로 사용하여 망간 이온이 도핑된 금속 칼코게나이드 나노결정을 제조하는 방법에 관한 것으로, 상세하게는 1차아민 또는 2차아민, 또는 이들의 혼합물로부터 선택되는 아민계 물질에, 망간염을 제외한 금속염과 망간염을 혼합하여 금속-아민 착화합물 용액을 제조하는 단계, 및 상기 금속-아민 착화합물 용액에 황(S) 원으로서 황분말을 첨가하거나 셀레늄(Se) 원으로서 셀레늄 분말, 셀레노우레아 또는 셀레노카바메이트를 첨가하고 혼합한 후 열처리하는 단계를 포함한다. 본 발명의 제조방법은 불순물이 나노결정의 내부로 고품질로 도핑되며, 나노 결정의 크기, 모양(morphology), 불순물의 도핑 정도를 조절할 수 있으며, 안정적이고 친환경적이며, 단순한 스케일 업(scale up)에 의해 한 번의 공정으로 망간이 도핑된 나노결정을 다량으로 얻을 수 있는 장점이 있다.
PCT/KR2010/000066 2009-02-23 2010-01-06 망간이 도핑된 나노결정의 제조방법 Ceased WO2010095812A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090014821A KR101028907B1 (ko) 2009-02-23 2009-02-23 망간이 도핑된 나노결정의 제조방법
KR10-2009-0014821 2009-02-23

Publications (2)

Publication Number Publication Date
WO2010095812A2 true WO2010095812A2 (ko) 2010-08-26
WO2010095812A3 WO2010095812A3 (ko) 2010-10-14

Family

ID=42634292

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/000066 Ceased WO2010095812A2 (ko) 2009-02-23 2010-01-06 망간이 도핑된 나노결정의 제조방법

Country Status (2)

Country Link
KR (1) KR101028907B1 (ko)
WO (1) WO2010095812A2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101968656B1 (ko) * 2013-01-02 2019-04-12 서울대학교산학협력단 망간으로 도핑된 황화아연 나노입자 접합체, 이의 제조 방법 및 이의 다광자 광학 영상화제로서의 용도
KR102164628B1 (ko) 2013-08-05 2020-10-13 삼성전자주식회사 나노 결정 합성 방법
KR20190063160A (ko) 2017-11-29 2019-06-07 어업회사법인 주식회사 제이앤씨 양식장의 먹이생물 배양정보 수집 및 생산 관리 시스템
KR102805220B1 (ko) 2024-01-22 2025-05-13 한국과학기술연구원 비카드뮴계 양자점의 제조 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE528394C2 (sv) 2004-05-18 2006-11-07 Nm Spintronics Ab Mangandopade magnetiska halvledare
KR100876258B1 (ko) 2007-01-25 2008-12-26 고려대학교 산학협력단 망간이 도핑된 카드뮴셀레나이드 양자점의 제조방법

Also Published As

Publication number Publication date
WO2010095812A3 (ko) 2010-10-14
KR20100095817A (ko) 2010-09-01
KR101028907B1 (ko) 2011-04-12

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