WO2010095812A2 - Production method for nanocrystals doped with manganese - Google Patents

Production method for nanocrystals doped with manganese Download PDF

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Publication number
WO2010095812A2
WO2010095812A2 PCT/KR2010/000066 KR2010000066W WO2010095812A2 WO 2010095812 A2 WO2010095812 A2 WO 2010095812A2 KR 2010000066 W KR2010000066 W KR 2010000066W WO 2010095812 A2 WO2010095812 A2 WO 2010095812A2
Authority
WO
WIPO (PCT)
Prior art keywords
manganese
nanocrystals
metal
doped
salt
Prior art date
Application number
PCT/KR2010/000066
Other languages
French (fr)
Korean (ko)
Other versions
WO2010095812A3 (en
Inventor
현택환
유정호
Original Assignee
서울대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울대학교 산학협력단 filed Critical 서울대학교 산학협력단
Publication of WO2010095812A2 publication Critical patent/WO2010095812A2/en
Publication of WO2010095812A3 publication Critical patent/WO2010095812A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G45/00—Compounds of manganese
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/86—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by NMR- or ESR-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Luminescent Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

The present invention relates to a method for producing metal chalcogenide nanocrystals doped with manganese ions using a precursor consisting of a metal salt which is stable in air and environmentally friendly and, more specifically, to one comprising the steps of: producing a metal-amine complex solution by mixing a manganese salt together with a metal salt other than a manganese salt in an amine-based substance selected from primary amines or secondary amines or mixtures thereof; and adding a celenourea or selenocarbamate and powdered selenium (Se) as a selenium source or else adding powdered sulphur (S) as a sulphur source to the metal-amine complex solution, and mixing and then carrying out a heat treatment. The method of the present invention is advantageous in that it allows high quality doping of impurities into the interiors of nanocrystals, it makes it possible to adjust the size and morphology of, and the extent of impurity doping in the nanocrystals, it is stable and environmentally friendly, and it makes it possible to obtain in volume nanocrystals which are doped with manganese in a single process simply by scaling up.
PCT/KR2010/000066 2009-02-23 2010-01-06 Production method for nanocrystals doped with manganese WO2010095812A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0014821 2009-02-23
KR1020090014821A KR101028907B1 (en) 2009-02-23 2009-02-23 A Method for manufacturing manganese doped nano-crystals

Publications (2)

Publication Number Publication Date
WO2010095812A2 true WO2010095812A2 (en) 2010-08-26
WO2010095812A3 WO2010095812A3 (en) 2010-10-14

Family

ID=42634292

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/000066 WO2010095812A2 (en) 2009-02-23 2010-01-06 Production method for nanocrystals doped with manganese

Country Status (2)

Country Link
KR (1) KR101028907B1 (en)
WO (1) WO2010095812A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101968656B1 (en) * 2013-01-02 2019-04-12 서울대학교산학협력단 Mn―Doped ZnS Nanoparticle Conjugate, Process for Preparing the Same and Use of the Same for Multiphoton Imaging
KR102164628B1 (en) 2013-08-05 2020-10-13 삼성전자주식회사 Processes for synthesizing nanocrystals
KR20190063160A (en) 2017-11-29 2019-06-07 어업회사법인 주식회사 제이앤씨 System for Managing History of producing and collecting growth information for paralichthys olivaceus of sea breeding farm

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070190367A1 (en) * 2004-05-18 2007-08-16 Venkat Rao Manganese Doped Magnetic Semiconductors
KR100876258B1 (en) * 2007-01-25 2008-12-26 고려대학교 산학협력단 Method of manufacturing manganese doped cadmium selenide quantum dots

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070190367A1 (en) * 2004-05-18 2007-08-16 Venkat Rao Manganese Doped Magnetic Semiconductors
KR100876258B1 (en) * 2007-01-25 2008-12-26 고려대학교 산학협력단 Method of manufacturing manganese doped cadmium selenide quantum dots

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MIKULEC, FREDERIC V. ET AL.: 'Organometallic Synthesis and Spectroscopic Characterization of Manganese-Doped CdSe Nanocrystals' J. AM. CHEM. SOC. vol. 122, 2000, pages 2532 - 2540 *
VISWANATHA, RANJANI ET AL.: 'Shape Control of Doped Semiconductor Nanocrystals (d-Dots)' NANO RES. vol. 1, 2008, pages 138 - 144 *

Also Published As

Publication number Publication date
KR101028907B1 (en) 2011-04-12
WO2010095812A3 (en) 2010-10-14
KR20100095817A (en) 2010-09-01

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