WO2010093761A1 - Condensateur électrique fritté et à nanopores, condensateur électrochimique et batterie et leur procédé de fabrication - Google Patents

Condensateur électrique fritté et à nanopores, condensateur électrochimique et batterie et leur procédé de fabrication Download PDF

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WO2010093761A1
WO2010093761A1 PCT/US2010/023848 US2010023848W WO2010093761A1 WO 2010093761 A1 WO2010093761 A1 WO 2010093761A1 US 2010023848 W US2010023848 W US 2010023848W WO 2010093761 A1 WO2010093761 A1 WO 2010093761A1
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Prior art keywords
scaffolding
pores
facet
electrical contact
contact area
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PCT/US2010/023848
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English (en)
Inventor
Herzel Laor
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Anocap, Llc
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Publication date
Priority claimed from US12/370,394 external-priority patent/US20100123993A1/en
Application filed by Anocap, Llc filed Critical Anocap, Llc
Priority to EP10741701.6A priority Critical patent/EP2396817A4/fr
Priority to JP2011550222A priority patent/JP2012517717A/ja
Priority to US13/148,918 priority patent/US20110310530A1/en
Publication of WO2010093761A1 publication Critical patent/WO2010093761A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15—Solid electrolytic capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/008—Terminals
    • H01G9/012—Terminals specially adapted for solid capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/022—Electrolytes; Absorbents
    • H01G9/025—Solid electrolytes
    • H01G9/032—Inorganic semiconducting electrolytes, e.g. MnO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/04—Construction or manufacture in general
    • H01M10/0436—Small-sized flat cells or batteries for portable equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
    • H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
    • H01M10/0562—Solid materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/058—Construction or manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139—Processes of manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates generally to the field of sequential surface chemistry. More specifically, it relates to products and methods for manufacturing products using Atomic Layer Deposition ("ALD”) to depose one or more materials onto a surface.
  • ALD is a thin film deposition technique based on the sequential use of a gas phase chemical process. ALD has capability for high-quality, molecular-scale film depositions. ALD is used for about 40 years now, see United States Patent 4,058,430 to Suntola et al., United States Patent 4,413,022 to Suntola, et al., http://en.
  • ALD manufacturing technology is developed to a high level, with deposition equipment available from several companies. See, e.g. www.picosun.com, www.beneq.com, www.oxford-instruments.com, www.cambridgenanotech.com, www.sundewtech.com, all of which are incorporated herein by reference in their entirety.
  • the Chemical Vapor deposition (“CVD”) process is useful in forming material layers on a substrate surface, such as an electrode.
  • a substrate surface such as an electrode.
  • the non-uniformity of the layers deposited on the substrate can lead to voids and thickness variations, thereby rendering the electrode or other electrical component inoperable.
  • CVD coats the exposed surface of the substrate
  • ALD is penetrating, and will coat conformal, equal thickness layers on both exposed and hidden surfaces, due to the self-limiting properties of the ALD process. Characteristics similar to those of CVD are present for evaporation coating and sputtering. Some of these characteristics can be used as benefits where a coating is required only on exposed surfaces.
  • electrolytic capacitors has severe limitation is their application due to short life (especially at elevated temperatures), high series resistance, energy losses due to ripple current that results in heating, inability to be used in AC applications, damaging failure mode (spreading of conductive electrolyte), limited operational temperature range, high leakage current, capacitance dependent on how long the capacitor was under applied voltage, etc.
  • ALD-manufactured gates and capacitors in semiconductor applications demonstrates the benefits over other known manufacturing methods.
  • Some ALD films are exceptionally defect free, stress free and pinhole free down to the 1-2 molecular layers. This unmatched characteristic is useful for the deposition of gate and capacitor dielectrics, diffusion-barriers and seed layers.
  • Electrochemical capacitors also known as electric double-layer capacitors or supercapacitors are used when large capacitance is needed, leveraging the flow of ions in a cell to store electric charge.
  • Electrochemical capacitors have a high number of charge-discharge cycles, typically in the millions, can have fast charge-discharge time, but can store less energy then batteries.
  • Electric batteries utilizes chemical compositions to store energy. See, for example, “Batteries and electrochemical capacitors”, Hector D. Abruiio et al, Physics Today, December 2008 p.43 and “Solid-state microscale lithium batteries prepared with microfabrication processes”, Jie Song et al. 2009 J. Micromech. Microeng. 19 045004 (6pp), all of which are incorporated herein by reference in their entirety.
  • battery as used herein will generally refer to an electric battery unless otherwise specified. Chemical reactions generate a flow of ions in the battery and electrical current flow out of the battery. Some batteries (secondary cells) can be charged by applying current that causes the flow of ions and the storage of energy in chemical bonds. Most batteries have a limitation in that the number of charge-discharge cycles is limited to no more than a few thousand cycles, charge-discharge time is relatively slow and most batteries develop heat during operation. There has been a substantial amount of research for materials applicable as the anode, cathode, electrolyte and separator for batteries. In advanced designs, one material is used as both the electrolyte and separator, called fast ion conductor, solid electrolyte or superionic conductor. The term “solid electrolyte” will be used herein.
  • an electrical component is provided that is comprised of: a first electrode formed of sintered structure made of metallic particles that is mostly un-oxidized with less than a 100% fill ratio; a dielectric layer, formed by ALD, wherein the dielectric layer substantially surrounds the first electrode; insulator formed on an exposed surface of the sintered structure; a second electrode formed in the remaining volume to fully or partially complement the first electrode and the dielectric layer; and first and second terminals disposed in electrical connection with the sintered structure and the second electrode respectively.
  • sintered capacitors will have fully monolithic structure, no leakage, low serial resistance and inductance, long life at elevated temperatures, induce no damage to the surrounding electronics upon failure and will be capable of full AC operation.
  • the sintered capacitors manufactured according to this embodiment have a specific capacity, by way of example but not limitation, of 25 V ⁇ F/mm 3 - 3.5 times higher then Tantalum capacitors, and 35 times higher then Aluminum capacitors.
  • an electrochemical capacitor or battery is provided as in the previous embodiment but with the dielectric replaced by anode material, cathode material and solid electrolyte material.
  • These electrochemical capacitors and batteries will have improved performance compared with conventional electrochemical capacitors or batteries, mainly due to the fact the the distance that ions need to travel between cathode and anode is in the nanometer scale compared with millimeters or tenth of millimeters in conventional such components.
  • an electrochemical capacitor or battery is provided as in the previous embodiment but with the second electrode is omitted and either the cathode or the anode, whichever is further from the first electrode, will carry the electrical current to the second terminal.
  • a method of manufacturing of an electrical component comprising: providing a first electrode formed of sintered structure made of metallic particles with less than a 100% fill ratio that is mostly un-oxidized; soldering, brazing or connecting by other technology a first terminal to the sintered structure to create mechanical and electrical connection between the first terminal and the first electrode; depositing, via ALD, dielectric layer wherein the dielectric layer substantially surrounds the first electrode; installing an insulator formed on an exposed surface of the structure (note that this step and the previous step can be reversed); providing a second electrode formed in part or all of the remaining volume to complement the first electrode and the dielectric layer; and soldering, brazing or connecting by other technology a second terminal disposed in electrical connection with the second electrode.
  • a method of manufacturing electrochemical capacitor or battery is provided as in the previous embodiment but with the step of depositing dielectric replaced by steps of depositing, via ALD, anode material, solid electrolyte material and cathode material, in this order or the reversed order, and the step of installing an insulator is performed either before or after the step of depositing the solid electrolyte.
  • a method of manufacturing electrochemical capacitor or battery is provided as in the previous embodiment but with the step of depositing the second electrode is omitted and either the cathode or the anode, whichever is further from the first electrode, will carry the electrical current to the second terminal.
  • a capacitor having: a scaffolding having a plurality of pores therein where at least one pore transverses the scaffolding from a first facet to a second facet; a first conductor deposed on the surface of the scaffolding including on the inner surface of the plurality of pores; a first electrically conductive surface at the first facet in electrical contact with the first conductor; a first terminal brazed or soldered to the first electrically conductive surface; a dielectric deposed on the surface of the first conductor including on the inner surface of the plurality of pores; an insulator installed on an exposed surface of the scaffolding; a second conductor deposed on the surface of the dielectric including on the inner surface of the plurality of pores; a second electrically conductive surface at the second facet, the second electrically conductive surface is in electrical contact with the second conductor; and a second terminal brazed or soldered to the second electrically conductive surface; According to yet another embodiment, electrochemical capacitor or battery is provided as in the previous embodiment but with
  • electrochemical capacitor or battery is provided as in the previous embodiment but with the first conductor and the second conductor are omitted, and the anode and cathode carry electrical current to the first electrically conductive surface and the second electrically conductive surface respectively or to the second electrically conductive surface and the first electrically conductive surface, respectively.
  • a method of manufacturing a capacitor comprising: providing a scaffolding having a plurality of pores therein where at least one pore transverses the scaffolding from a first facet to a second facet; depositing, via ALD, a first conductor on the surface of the scaffolding including on the inner surface of the plurality of pores; establishing, via CVD, evaporating coating, sputtering or another technology, generally on the first facet of the scaffolding but generally not in the pores, a first electrically conductive surface in electrical contact with the conductor; brazing or soldering a first terminal to the first electrically conductive surface; depositing, via ALD, a dielectric on the surface of the first conductor including on the inner surface of the plurality of pores; installing an insulator on an exposed surface of the scaffolding (note that this step and the previous step can be swapped with the same performance of the final component); depositing, via ALD, a second conductor on the surface of the dielectric including on the inner
  • a method of manufacturing electrochemical capacitor or battery is provided as in the previous embodiment but with the step of depositing an dielectric replaced by steps of depositing, via ALD, anode material, solid electrolyte material and cathode material, in this order or in the reverse order.
  • the step of installing an insulator will be performed before or after the step of deposing the solid electrolyte.
  • a method of manufacturing electrochemical capacitor or battery is provided as in the previous embodiment but with the step of depositing, via ALD, a first conductor and the step of depositing, via ALD, a second conductor are omitted.
  • an electrical component comprising: a pored scaffolding having a plurality of pores and where at least one pore transverses the scaffolding from a first facet to a second facet; two or more layers of conductive material deposited on the scaffolding and substantially covering all surfaces of the pores within the scaffolding, where the two layers of conductive material are not in direct electrical contact with each other; a first contact disposed on the first facet; a second contact disposed on the second facet;
  • an electrical component comprising: a pored scaffolding having a plurality of pores and where at least one pore transverses the scaffolding from a first facet to a second facet; at least one layer of anode material substantially spanning all surfaces of the scaffolding including in the pores of the scaffolding; at least one layer of solid electrolyte material substantially spanning all surfaces of the scaffolding including in the pores of the scaffolding; at least one layer of cathode material substantially spanning all surfaces of the scaffolding including in the pores of the scaffolding; a first contact disposed on the first facet; a second contact disposed on the second facet; and insulation material that separate the anode from the cathode at the outer surface of the scaffolding, where all layers are deposited on the scaffolding and substantially covering all surfaces of the pores within the scaffolding.
  • substantially spanning all surfaces generally means that the entire surface of a component (e.g., scaffolding or layers provided on scaffolding), have been covered by a layer including the inner surface of hidden features such as pores. This can usually be accomplished via ALD today, but other processes for forming layers of materials on surfaces of components can also be utilized to achieve the desired surface coating without departing from the scope of the present invention. It will be appreciated by those skilled in the art that the concepts presented herein are applicable for use with a variety of other microelectronic and electronic components other than those listed above including low-capacitance capacitors, resistors, transducers, transformers, diodes, transistors, and conductors, to name a few.
  • PCB Printed Circuit Board
  • IC Integrated Circuit
  • Fig. 1 is a sectional view of a sintered capacitor manufactured according to one embodiment of the present invention
  • Fig. 2 is a partial sectional view of the sintered capacitor shown in Fig. 1;
  • Fig. 3 is another partial sectional view of the sintered capacitor shown in Fig. 1;
  • Fig. 4 is yet another partial sectional view of the sintered capacitor shown in Fig. 1;
  • Fig. 5 is yet another partial sectional view of the sintered capacitor shown in Fig. 1;
  • Fig. 6 is yet another partial sectional view of the sintered capacitor shown in Fig. 1;
  • Fig. 7 is yet another partial sectional view of the sintered capacitor shown in Fig. 1;
  • Fig. 8 is yet another partial sectional view of the sintered capacitor shown in Fig. 1;
  • Fig. 9 is a sectional view of a nanopore capacitor according to at least one embodiment of the present invention.
  • Fig. 10 is a perspective view of scaffolding used for constructing a nanopore capacitor according to at least one embodiment of the present invention.
  • Fig. 11 is a partial sectional view of an electrochemical capacitor or a battery according to at least one embodiment of the present invention
  • Fig. 12 is a partial sectional view of the capacitor shown in Fig. 9;
  • Fig. 13 is another partial sectional view of the capacitor shown in Fig. 9;
  • Fig. 14 is yet another partial sectional view of the capacitor shown in Fig. 9;
  • Fig. 15 is yet another partial sectional view of the capacitor shown in Fig. 9;
  • Fig. 16 is yet another partial sectional view of the capacitor shown in Fig. 9;
  • Fig. 17 is yet another partial sectional view of the capacitor shown in Fig. 9;
  • Fig. 18 is a sectional view of a nanopore capacitor built on a carrier according to at least one embodiment of the present invention.
  • Fig. 19 is a sectional view of an anodized nanopore capacitor with a nitride conductor and plug according to at least one embodiment of the present invention
  • Fig. 20 is a sectional view of a sintered capacitor with a nitride conductor and plug according to at least one embodiment of the present invention.
  • ALD is a manufacturing technique that allows one or more atomic or molecular layers of materials to be deposed on a surface, and has several benefits over other methods of manufacturing, including but not limited to providing consistent and reliable uniform coating thickness at exposed and hidden surfaces that are not achievable with previous technologies.
  • a typical ALD process may be summarized as comprising multiple cycles, with each cycle comprising two precursor stages and two purge stages. Descriptions of ALD process are listed in the background section above.
  • an ALD process for deposition OfAl 2 Os is described herein.
  • a reaction chamber in which the ALD is performed is evacuated.
  • the selected first precursor is introduced into the reaction chamber for the purpose of reacting with a surface.
  • Trimethylaluminium (trimethylaluminum) (TMA) gas may be used as the first precursor for reacting with all the surfaces in a reaction chamber. This includes the surfaces of the chamber itself and any part or parts placed in the chamber.
  • TMA Trimethylaluminium
  • the precursor stage continues until all the surface is passivated. Aluminum atoms are deposited attached to the surface and methyl groups are attached to the Al.
  • the first purge stage is applied by evacuating the chamber to remove any excess precursor that did not react or undesired byproduct from the chamber.
  • An inert gas may be introduced to the chamber for better purging of the precursor by basically "flushing" it.
  • the selected second precursor is introduced into the reaction chamber.
  • water vapor may be introduced to the chamber in order to induce a reaction between the water vapor and the dangling methyl groups that exist on the surface of the material. This reaction forms Aluminum-Oxygen chemical bonds, and further forms a new surface with exposed hydroxyl groups for the subsequent TMA precursor stage.
  • the second purge stage is applied, similar to the first purge stage, and the excess precursor is expelled from the reaction chamber. The completion of two precursor stages and two purge stages is referred to as one cycle.
  • An ALD cycle results in a single molecular layer of AI 2 O 3 deposited on all surfaces open to the reaction chamber volume.
  • An ALD process may comprise multiple cycles, some times on the scale of thousands, in order to form the desired thickness. As each layer is conformally and uniformly deposed on to the material surface and each preceding layer, the desired thickness can be accurately and consistently controlled by the number of cycles.
  • the ALD process can be monitored and controlled by a number of known control logic hierarchies, such as PC-based, PLC (programmable logic controller) based, or by other control systems.
  • ALD process is known to achieve very deep penetration into pores.
  • each stage in a cycle can be prolonged to allow for the precursors or the purge gas time to penetrate the deepness of the pores.
  • the vacuum pump that is connected to the chamber can be valved (shut away) from the chamber for the prolonged time of each stage of the cycle.
  • the deposited materials can be AI2O3, ZrO 2 , HfO 2 , SiO 2 , SrTiO 3 , BaTiO 3 , Ta 2 O 5 , TiO 2 , HfSiO 4 , La 2 O 3 , Y 2 O 3 , TiN, TaN, WN, Cu, W, TiSi 2 , PtSi, CoSi 2 , NiSi, WSi 2 , Si 3 N 4 etc.
  • ALD atomic layer deposition
  • ALD atomic layer deposition
  • dielectric layer made of Al 2 O 3 .
  • One molecular layer OfAl 2 O 3 has a thickness of -0.085 nm (0.85 A).
  • dielectric materials include, but are not limited to, Nb 2 O 5 , ZrO 2 , HfO 2 , SiO 2 , SrTiO 3 , BaTiO 3 , Ta 2 O 5 , TiO 2 , HfSiO 4 , La 2 O 3 , Y 2 O 3 , Si 3 N 4 and other non-conductive elements or materials.
  • dielectric layers will be described herein as including Al 2 O 3 , one skilled in the art will appreciate that the invention is not so limited to this type of dielectric and any other known type of dielectric material can be used in substitution OfAl 2 O 3 or as a supplement to Al 2 O 3 .
  • the dielectric layer OfAl 2 O 3 needs to have a thickness of 10 nm. To reach this thickness, 120 layers need to be deposited. Using commonly available process tools, the ALD process will take approximately 60 to 600 seconds.
  • the ALD deposited AI2O3 has relative permittivity ⁇ r of approximately 8. Calculation of the capacity of 1 cm 2 of a parallel plate capacitor made of a 10 nm thick layer OfAl 2 Os between two metallic electrodes is as follows:
  • a capacitor specified for 100 Volt with 0.028 ⁇ F/cm 2 could be deposited with 3000 layers OfAl 2 O 3 .
  • the material and the number of layers can be varied to achieve a wide range of capacitance and voltages for such a capacitor.
  • the solid electrolyte layer can be constructed, by way of example but not limitation, from: Lithium Phosphorous Oxynitride (Lipon), Lithium Lanthanum Titanate (LLT), Beta-alumina complexed with a mobile ions such as Na , K , Li , Ag , H , Pb ,
  • FIG. 1 A sintered capacitor manufactured by ALD according to one embodiment is shown in a cross-sectional view in Fig. 1. It is important to note that the drawing of Fig. 1 is not to scale, as the whole structure is on a scale of millimeters while the spherical sintered particles are on a scale of micrometers or nanometers.
  • the sintered capacitor 100 is comprised of sintered material 104. In a preferred embodiment, the sintered material 104 also acts as one of the electrodes of the sintered capacitor 100, and is preferably made of conductive metal.
  • the sintered material have less then 100% fill, and includes material particles fuzed together by the sintering process and pores, where at least one pore transverses the scaffolding from a first facet to a second facet.
  • Particle diameter between 0.1 ⁇ m and 10 ⁇ m is common in sintering metals, however for calculation purposes, by way of example but not limitation, it is assumed to be diameter of 1 ⁇ m.
  • the whole surface of the sintered material 104 including hidden surfaces within the pores of the sintered material 104 is coated by dielectric material 112, which may have been deposited by ALD, according to methods described above.
  • the complement vacant space left by the sintered material 104 and dielectric material 112 is filled, fully or partially, with an electrode material 118, that is made of conductive material.
  • the electrode material 118 can be formed by an ALD process, or according to one alternative embodiment by other processes like wetting with molten metal, or a combination of the two processes.
  • the sintered material 104 and the electrode material 118 are connected to terminals 128, 144 by filler 124, 140.
  • the sintered material 104 and electrode material 118 are connected to terminals 128, 144 by solder 124, 140.
  • Insulation 132 is preferably placed to minimize the possibility of shorts at the outer surfaces.
  • the insulation 132 is preferably made of glass or plastic material.
  • the dielectric layer 112 of the previous embodiment is replaced with layers of anode, solid electrolyte and cathode, made of materials described above, to create a battery or electrochemical capacitor.
  • the electrode material 118 is omitted, if the anode or cathode, whichever is away from the sintered material 104, can carry the electrical current.
  • the detailed construction of the sintered capacitors will be better understood by the description of an embodiment of this invention, the method of manufacturing of a sintered capacitor. The construction process is described in relation to Figs. 2-8. Referring now to Fig. 2, the sintered material 104 is shown in cross-sectional view as a sintered powder.
  • the construction of the sintered capacitor 100 starts with creating the sintered material 104 to form an electrode by sintering of metal powder. It is preferred that one or more conductive metals such as Copper, Brass, Silver, Nickel, stainless steel, etc. are used. In one alternative embodiment, metal compositions such as Brass and/or metal particles coated with the same or another metal are used. In another alternative embodiment, non- metals, such as ceramics can be used if coated with metals either before or after sintering. During the known art of sintering, the metal powder is pressed and heated to a temperature below the melting point of the material, causing a localized merger of the particles. In Fig. 2, spherical shaped particles are shown, but other shapes are possible. The particles can be solid as shown in Fig.
  • the particles can have very uniform size or varieties of sizes. While the sintered body may have any shape or size, cube, right prism or cylinder shaped bodies from 1 mm in size to 10 mm in size will be more common in production. A fill ratio of 50% will be used herein as an example but not limitation, but other fill ratios can be used according to the known sintering processes.
  • the volume of the sintered material is porous, where at least one pore transverses the scaffolding from a first facet to a second facet.
  • a cube of 2*2*2 mm dimension will have approximately 4* 10 9 particles at a fill factor of 50%, with total surface area of about 24,000 mm 2 .
  • the sintering process results in forming an electrode comprised of the sintered material 104.
  • any porous material that was made by a variety of technologies can be used for the first electrode. Some porous materials have very large surface area that will be useful in creating a capacitor with large capacity. If not conducting, the material can be coated with at least one conducting layer.
  • the sintered material is mostly un-oxidized, that is, there is no dielectric layer coating the sintered material, and if there is, it is very thin, thinner then the dielectric layer that is deposited in the next step.
  • the bottom terminal 128 is preferably formed of convenient or common conductive metal, and is brazed to the sintered material 104 with filler 124.
  • the surface of the sintered material 104 can be cleaned by etching or other technologies to remove any oxide layers to allow good wetting of the solder or filler material and as preparation for the following deposition steps.
  • the brazing process could be made in the same chamber as used for the next step of manufacturing, by properly elevating the temperature to above the melting point of the filler.
  • the bottom terminal 128 can be formed from a piece of sheet metal onto which thousands of cubes, right prisms or cylinders of sintered material 104 are brazed.
  • the cross-sectional view of only one cube or cylinder is shown in Fig. 3 for clarity.
  • common dimensions include a bottom terminal of approximately 0.5 mm thickness and 400*400 mm 2 width and length, on to which 10,000 cubes of 2*2*2 mm are brazed at a pitch of approximately 4 mm.
  • a dielectric material layer 112 formed on the sintered material 104 is shown in cross-sectional view.
  • ALD is specifically useful in this step, as it enables deposition of very well conformed layers of material into very deep cavities. The process, as explained above, is self-terminating to create one molecular layer in each cycle of the process.
  • the dielectric material layer 112 should have high dielectric constant and high dielectric strength.
  • a known material in such ALD applications is AI2O3, used as an example above and below.
  • other dielectrics such as, by way of example but not limitation, Nb 2 Os, ZrO 2 , HfO 2 , SiO 2 , SrTiO 3 , BaTiO 3 or Ta 2 O 5 , TiO 2 , HfO 2 , HfSiO 4 , La 2 O 3 , Y 2 O 3 , or Si 3 N 4 can be used.
  • this material has a dielectric constant of approximately 8 and breakdown voltage of between 8-10 MV/cm. Assuming, by way of example but not limitation, that the objective is to manufacture a capacitor with 10 V operational voltage, and it is desired to have approximately 4 MV/cm or 4* 10 8 V/m as the working voltage. For a 10 Volt operational capacitor, the dielectric thickness is calculated as follows:
  • each molecular layer OfAl 2 O 3 is -0.085 nm in thickness. Therefore, approximately 300 layers are needed for dielectric layer 112. For different operational voltage the thickness changes nearly linearly.
  • the next step is of adding insulation 132 on the sides of the dielectric material layer 112 coated sintered material 104.
  • the reason for the insulation 132 is that it is undesired to create a periphery of the component where the two electrodes (sintered material 104 and electrode material 118) are separated by only a few nanometers (electrode material 118 is explained in detail later in relation to Fig. 6).
  • the insulation 132 is comprised of a thermo-setting or thermoplastic plastic with a high melting temperature.
  • glass can be used to make the insulation 132, consisting of various kinds of glass materials.
  • the coefficient of thermal expansion of the glass insulation 132 should be matched to the combined coefficient of the sintered material 104 and electrode material 118 to enable extreme working temperatures without damage to the glass.
  • the insulation 132 may be structured as powder, a paste, or pre-formed material to fill in among the cubes, right prisms or cylinders of individual capacitors units and then set or re-flowed.
  • the insulation 132 must be viscous enough not to wick into the bulk of volume between the sintered particles.
  • the insulation 132 is placed before the dielectric 112 is formed. This variant will not change the performance of the capacitor 100 or similarly constructed electrical component.
  • a cross-sectional view of the sintered capacitor assembly is shown including the second electrode 118.
  • ALD deposition of the electrode material 118 occurs.
  • Metallic ALD may need substantial number of layers (up to several thousands) to fill in all spaces formed between the sintered material 104 particles. While ALD of metal or conductive material is preferred, other technologies can be used to complete this step. Molten metal under vacuum conditions can be used to create the electrode material 118 in a process very similar to soldering.
  • a combination of first coating, by ALD, a metal that adheres well to the material of dielectric layer 112 and then melting-in another metal can also be used. In such a case, the ALD deposited layer will help the molten metal to wet the surface and wick in.
  • the electrode material 118 is preferably deposited at a temperature that does not melt the insulation 132. According to one alternative embodiment, the electrode material 118 can be used as the top contact or another layer of material may be used as top contact as will be shown below.
  • the next step includes placing the top terminal 144 into the desired position.
  • the top terminal 144 is preferably brazed to the electrode material 118 with filler 140.
  • the top terminal 144 will preferably have the same dimensions as the bottom terminal 128, and will be brazed to all the capacitors 100 in a single step.
  • Brazing 140 can be performed under vacuum to keep any unfilled volume in the capacitor 100 evacuated and to hermetically seal all such unfilled volumes. Alternatively, brazing can be made under controlled environment to control what is left in the unfilled volumes.
  • the individual sintered capacitors 100 will be formed by sawing the structure in the middle of the insulation in two directions, resulting in the capacitor shown in Fig. 8.
  • a solder barrier 130 can be applied to the top and bottom terminals 144, 128, as shown in Fig. 1, and this solder barrier 130 can be coated with solder material to prepare for assembly.
  • laser marking can be applied. The manufacturing process described in various embodiments above results in the final component as shown in Fig. 1. The whole unit can be placed in a tape package for automatic assembly.
  • ⁇ r is the relative permittivity of the dielectric material
  • A is the area in m 2 and d is the insulation thickness in meters.
  • C will be in Farads.
  • the specific capacitance will be:
  • a battery is constructed.
  • the dielectric layer of previous embodiments will be replaced with deposition of anode layer, solid electrolyte layer, and cathode layer, all deposited by ALD process, in this order or the reverse order.
  • Anode layer construction by way of example but not limitation: Li4Ti5 ⁇ l2, Ge(Li4.4Ge), Si(Li4.4Ge), Lithium-Titanate or Lithium Vanadium Oxide.
  • the solid electrolyte layer can be constructed, by way of example but not limitation, from: Lithium Phosphorous Oxynitride (Lipon), Lithium Lanthanum Titanate (LLT), Beta- alumina complexed with a mobile ions such as Na + , K + , Li + , Ag + , H + , Pb 2+ , Sr 2 + or Ba 2 + , non-stoichiometric Sodium Aluminate, Yttria-stabilized zirconia (YSZ) or (Li,La)xTi y Oz, to name a few.
  • Lipon Lithium Phosphorous Oxynitride
  • LLT Lithium Lanthanum Titanate
  • Beta- alumina complexed with a mobile ions such as Na + , K + , Li + , Ag + , H + , Pb 2+ , Sr 2 + or Ba 2 +
  • non-stoichiometric Sodium Aluminate Y
  • the insulator is installed either before or after the step of depositing the solid electrolyte in order to separate the anode from the cathode macroscopically at the terminals.
  • a battery is constructed omitting the step of installing the electrode material 118, relying on either the cathode or the anode, whichever is not in contact with the sintered material 104, to carry electrical current to the second terminal.
  • an electrochemical capacitor is constructed. Similar to the previous embodiment there are anode layer, solid electrolyte layer and cathode layer, all deposited by ALD process. There are several candidate materials for anode, cathode and solid electrolyte layer construction, by way of example and not limitation, similar to the materials listed above for batteries.
  • the capacitor 200 includes scaffolding 204 made of nano-pored AI 2 O 3 or a similar type of material.
  • the scaffolding 204 comprises nanometer scale diameter pores 206 where at least one pore transverses the scaffolding from a first facet to a second facet.
  • Fig. 9 only depicts four pores 206 in the cross-section of the scaffolding 204 and Fig. 10 only depicts a relatively small number of pores 206
  • depiction of the scaffolding 204 and other components of the capacitor 200 to scale would not facilitate a ready understanding of the present invention.
  • not-to-scale figures have been provided for clarity and to further the understanding of the present invention and one skilled in the art will appreciate that many thousands or millions of pores 206 may be present in a single cross-sectional view of the capacitor 200.
  • the size of the whole assembly is on the order of few hundreds of micrometers to several millimeters on the side and the pores 206 are several tens to few hundreds of nanometers in diameter.
  • the pores 206 may comprise a length ranging from between a few of micrometers up to several millimeters.
  • calculation is made of the number of pores in a scaffolding 204 of 2x2x2 mm 3 with average pore 206 diameter of 100 nm.
  • the number of pores 206 equals approximately:
  • the nanopore capacitor 200 is constructed of: nanopore scaffolding 204 having multiple pores 206 where at least one pore transverses the scaffolding from a first facet to a second facet; a conductor 208 conformal to the scaffolding 204 and substantially all exposed surfaces of the scaffolding 204 and substentially all internal surfaces of the pores, thereby acting as the first electrode of the capacitor; dielectric 212 conformal to the conductor 208; a plug 216 conformal to the dielectric 212 and acting as the second electrode of the capacitor; a bottom terminal 228 attached to conductor 208 with filler or solder 224 and acting as a first contact area to connect the capacitor to other electronic components, wires, PCBs and the like; a top terminal 244, attached to plug 216 with filler or solder 240 and acting as a second contact area to connect the capacitor
  • electrochemical capacitors and batteries can be constructed by replacing the dielectric 212 with layers of cathode, solid electrolyte and anode.
  • a part of a pore of this embodiment is shown in Fig. 11 , greatly magnified and not to scale.
  • the pore is shown inside scaffolding 204.
  • anode 272 solid electrolyte 274
  • cathode 276 plug 216.
  • the ion transport length 278 is the distance ions needs to travel during charge and discharged.
  • the materials of the anode, cathode and solid electrolyte can be as discussed above, and ion transport length 278 is on the order of tens of nanometers, resulting in low resistance and fast charge and discharge.
  • Fig. 11 generally depicts a five layer construction within the pore of the scaffolding 204, one skilled in the art will appreciate that a three layer construction may also be utilized without departing from the scope of the present invention.
  • a cathode, electrolyte, and anode layer may be provided in substantially all of a pore if the conductivity of the cathode and anode layers are sufficient to support the desired operation of a battery.
  • FIG. 1 Another embodiment of the present invention is the method of manufacturing a nanopore capacitor 200.
  • the explanation of the method will aid in understanding the structure of the nanopure capacitor 200.
  • the method of constructing nanopore capacitor 200 will be explained referring to Figs. 9, 10 and 12-17. Similar to Figs. 1-11, Figs. 12-17 are not necessarily drawn to scale.
  • the scaffolding 204 is made from metallic Aluminum by driving an electrical current through the Aluminum while using an acidic electrolyte, resulting in scaffolding 204 made of AI2O3 (sapphire).
  • AI2O3 solue
  • the construction of the scaffolding 204 is described in further detail in U.S. Patent Nos. 3,574,681; 3,850,762; 4.687,551; and 5,112,449, all of which are hereby incorporated by reference in their entirety.
  • a commercial product manufactured by Whatman Ltd., and marketed under the registered trade name Anopore® is provided as a particulate filter. See http://www.whatman.com/PRODAnoporeInorganicMembranes.aspx and http://www.2spi.
  • the pores need to extend from a facet where the flow enters to a facet where the flow exits the filter.
  • the size of the pores 206 can be controlled by the process parameters: type of electrolyte, amount of current etc. Standard diameter pores are commercially available in the sizes of 20 nm, 100 nm, and 200 nm.
  • the sizes of the pores 206 used in the capacitors described herein may vary according to component design and customer preferences.
  • similar scaffolding can be made by different technologies, such as directional etching of a crystal trough a mask and other technologies.
  • the pores 206 are continuous and generally uniform in diameter from the top facet of the scaffolding 204 to the bottom facet of the scaffolding 204. There are generally no inter-connections, branching or crossings between pores 206, however, if there are any inter-connections, branching or crossing of pores it will not cause any difficulty for manufacturing or any difference in performance of a component according to any of the embodiments herein.
  • the material used to construct the scaffolding 204 is inert and capable of withstanding extreme environment conditions such as elevated temperatures, corrosive liquids, and so on.
  • the scaffolding 204 of the nanopore capacitor 200 is covered by a first conductor 208 via an ALD process, which includes multiple cycles resulting in the deposition of multiple layers of the first conductor 208.
  • the first conductor 208 comprises a metal or semiconductor material.
  • the first conductor 208 is provided to act as a first electrode of the capacitor 200 and may have a thickness ranging from a few nanometers up to tens of nanometers.
  • the scaffolding 204 with first conductor 208 may be brazed, soldered, or sintered with filler 224 to a base terminal 228.
  • Base terminal 228 is made of metal and is used for making the electrical connection out of the capacitor to an electrical circuit external to the capacitor 200. Also, filler 224 may be provided to seal the pores 206 of the scaffolding 204 on the bottom side of the scaffolding 204 and also facilitate an electrical contact between the first conductor 208 and the base terminal 228.
  • the base terminal 228 may have a thickness ranging, by way of example and not limitation, from a few hundred microns up to over a millimeter.
  • a layer of dielectric 212 is then deposited on the entire structure (scaffolding 204, first conductor 208, filler 224 and base terminal 228) using an ALD process.
  • the thickness of the dielectric 212 is designed for a certain and predefined working voltage.
  • ALD provides a mechanism which creates a complete layer of dielectric 212, with no defects, pinholes or any other points of first conductor 208 exposure, thereby reducing or eliminating the opportunities for a short circuit in the capacitor 200.
  • the dielectric 212 may have a thickness ranging by way of example and not limitation, from a few nanometers up to tens and even hundreds of nanometers depending of the required capacitance and operation voltage.
  • an insulator 232 is then placed on the circumference surface of the scaffolding 204.
  • the insulator 232 is placed on the surfaces of the scaffolding 204 whose plane would dissect an entire pore 206 (i.e., on the surfaces of the scaffolding 204 on which no pore openings 206 are exposed).
  • the insulator 232 comprises a thickness ranging by way of example and not limitation, from a few hundred microns up to over a millimeter.
  • a plug 216 is deposited using ALD to substantially fill the remainder of the pores 206 not already filled by the first conductor 208 and dielectric 212.
  • the plug 216 acts as the second electrode of the capacitor 200 and may include a metal or semiconductor material.
  • plug 216 comprises a thickness ranging from about ten nanometers up to a 100 nm. In some embodiments, plug 216 does not fill pores 216.
  • a top terminal 244 is then soldered, brazed, or sintered to the top of the plug 216 with a filler 240.
  • the top terminal 244 comprises a thickness ranging from a few hundred microns up to over a millimeter. The excess layers of the plug 216 and dielectric 212 are then etched or ground away to arrive at the capacitor 200 depicted in Fig. 9.
  • the resulting capacitor 200 may comprise a specific capacity, by way of example and not limitation, of 400 VuF/mm as compared to 7 VuF/mm provided by conventional Tantalum electrolytic capacitors. Furthermore, the series resistance of the capacitor 200 is on the order of micro-ohms and the series inductance is very low, thereby resulting in an extremely high performance. Due to the construction of capacitor 200, it will have high reliability, expanded working temperatures and substantially longer life-expectancy than traditional electrolytic capacitors.
  • electrochemical capacitors and batteries are constructed by replacing the step of depositing dielectric 212 with several steps of depositing, by ALD, cathode 276, solid electrolyte 274 and anode 272, in that or the reversed order, as depict in Fig. 11.
  • the insulation 232 should be installed before or after deposing the solid electrolyte 274.
  • a method of manufacturing electrochemical capacitor or battery is provided as in the previous embodiment but with the step of depositing the first conductor 208 and the plug 216 omitted and the cathode and anode carry the electrical current to the terminals.
  • Figs. 9-17 a process for constructing a nanopore capacitor 200, electrochemical capacitor or battery will be explained in further detail. Similar to Figs. 1- 8, Figs. 9-17 are not necessarily drawn to scale.
  • the manufacturing process continues with the creation of the first electrode of the capacitor 200, electrochemical capacitor or battery.
  • the scaffolding 204 is coated with a conducting material, thereby resulting in the first conducting layer 208.
  • the material used to construct the first conducting layer 208 can be a pure metal such as Silver, Copper, Gold, Indium, Aluminum, Tungsten, Nickel, Cobalt, Iron, Titanium, Ruthenium, Zinc, Tin, Tantalum, or combinations thereof.
  • the first conducting layer 208 can alternatively, or in addition, be constructed of a semiconductor material such as Doped Silicon, Doped Germanium, or the like.
  • the first conducting layer 208 can comprise a metal nitride such as TiN, TaN, WN, metal Suicide such as TiSi 2 , PtSi, CoSi 2 , NiSi, WSi 2 and the like.
  • the first conducting layer 208 can comprise a combination or layered materials.
  • the first conducting layer 208 can comprise any electrically conducting material or any conducting composition or layers of conducting materials or compositions.
  • the first conductor 208 exhibit a relatively low resistance, thereby making metals or metal compounds a suitable choice.
  • first conductor 208 Different types of layers of different materials can also be used to construct the first conductor 208.
  • a non-metal is used to construct at least some of the first layers deposited on the scaffolding 204, then some of the last layers deposited on the scaffolding as the first conductor 208 may comprise metal, thereby facilitating adequate adhesion in later steps and possibly diffusion blocking barrier.
  • the first conductor 208 is preferably deposited using an ALD process.
  • the ALD process causes atomic or molecular layers to be deposited in an extremely conformal way. Each cycle of the ALD process deposit one atomic or molecular layer and to deposit N layers there is a need to simply run N cycles of the process. Due to the high aspect ratio of the pores 206, other deposition technologies known today are not practical, since the center area of the pores 206 will be under-coated.
  • the scaffolding 204 may be placed in the ALD process chamber on a surface treated not to accept coating, however, this is not a requirement. With a limited contact area between the scaffolding and the surface, most of the bottom of the scaffolding will get almost fully coated. Due to the possibly enormous aspect ratio of the pores 206, on the order of up to 100,000:1, a long dwell time will be required for the precursors in the reaction chamber as well as long purge times.
  • the first conductor 208 is configured to act as the first electrode of a capacitor 200 or a first current carrying element of an electrochemical capacitor or a battery that carry current from the battery electrode to the terminal. It should have a reasonable thickness, perhaps on the order of 1-30 nm, depending on the maximum series resistance allowed. As one non-limiting example, about 70 atomic layers of Copper can be deposited using ALD with a resulting thickness of about 10 nm. Note that the first conductor 208 can be omitted if the anode or cathode, whichever is deposited first, have sufficient electrical conductance for proper operating in the final component.
  • a diffusion barrier layer may be deposited on the scaffolding 204 before the deposition of the first conductor 208, to prevent diffusion of metal into the scaffolding 204.
  • Another barrier layer may be deposited after the deposition of the first conductor 208, to improve adhesion to the electrical contact that is made in the next step, and maybe to prevent diffusion to the dielectric.
  • the vacuum condition and elevated temperature used in connection with the ALD process may be maintained for a predetermined amount of time before starting the coating process, particularly in an attempt to remove any moisture trapped in the scaffolding 204 after its manufacture in an acid bath.
  • active reagents may be introduced to the reaction chamber to chemically attach to impurities and be removed.
  • the next step depicted in Fig. 13 includes the step of attaching a base terminal 228 to the scaffolding 204.
  • This base terminal 228 will act as the first electrical contact of the capacitor, electrochemical capacitor or battery 200 and will also facilitate a connection point for wires or similar electrical contacts .
  • the base terminal 228 will be directly soldered to a pad on a PCB via surface mounting technology, for example.
  • the attachment of the base terminal 228 will be done in such a way as to have good electrical contact to the first conductor 208 in and adjacent to the opening of a substantial majority of the pores 206. This is critical to achieve low series resistance.
  • the thickness of the first conductor 208 can range between a few up to tens of nanometers, and the base terminal 228 should generally not be conformal to the flatness of the scaffolding 204 to such an extent.
  • the base terminal 228 can be sintered by being heated to a temperature at which it becomes soft and conforms to the desired shape, perhaps with an applied force. It should be noted that the scaffolding 204 comprises an extremely hard material.
  • the attachment can be achieved by brazing, where a thin layer of filler 224 is disposed between the base terminal 228 and the first conductor 208.
  • the filler layer 224 should be thin such that it will not wick too much into the pores 206.
  • the filler 224 can be electroplated on or rolled with the base terminal 228 to an accurate thickness.
  • Sputtering, evaporation coating, CVD or similar technologies can be used to cover one facet of the scaffolding 204 with metallic layer of material to become part of the filler 224. Due to the limited penetration of the CVD, evaporation coating or sputtering process, very limited amounts of the filler 224 will end up in the pores 206. However, the pores 206 will be effectively closed on the bottom side where the filler 224 has been deposited, thereby enabling brazing or soldering of the base terminal 228 to the scaffolding 204 with no or limited filling the pores 206 of the scaffolding 204.
  • the top facet of the scaffolding 204 and first conductor 208 may be attached to the base terminal 228 (that is, the scaffolding 204 is inverted upside-down between Figs. 12 and 13).
  • ALD deposition of the first conductor 208 is utilized, then in the same chamber, CVD, evaporating, sputtering or the like of metal on top of the scaffolding 204 that almost or fully closes the top end of the pores 206 is employed.
  • the scaffolding 204 may be inverted to rest on the base terminal 228 for soldering or brazing.
  • the ALD process of depositing the first conductor 208 is performed while the scaffolding 204 is resting on the base terminal 228. Following the ALD process (which also possibly resulted in a coating of the base terminal 228), the temperature is raised to achieve the brazing step. In this scenario, a thin layer of conductor is deposited on top of the filler 224 which is sintered to the first conductor 208 on the scaffolding 204, and the filler 224 is allowed to soften for full area contact.
  • nanopored AI2O3 it is a known art to manufacture nanopored AI2O3 in such a way that one side of all the pores 206 ends in a conducting material at one facet of the scaffolding. See e.g., U.S. Patent No. 6,838,297 to Iwasaki et al, which is hereby included by reference in its entirety.
  • the separate and distinct step of attaching the base terminal 228 to the scaffolding 204 is avoided.
  • the step of depositing the first conductor 208 is made with the base terminal 228 already attached.
  • one large metal plate can be used as the base terminal 228 and be used to attach hundreds or thousands of scaffolding+conductor 204+208 units, and will be separated to individual units (i.e., individual capacitor 200, electrochemical capacitor or battery units) later in the production process.
  • the next step of the manufacturing process comprises of depositing a dielectric 212 on the structure.
  • the dielectric 212 is preferably deposited using an ALD process and is provided to act as the dielectric of the capacitor 200.
  • Dielectric 212 must be defect free and pinhole free to avoid internal shorts which can render the capacitor useless.
  • the ALD process is uniquely adequate for such a need.
  • the dielectric 212 may comprise, for example, a metal oxide such as Nb 2 O 5 , Ta 2 O 5 , Al 2 O 3 , ZrO 2 , HfO 2 , SiO 2 , TiO 2 , La 2 O 3 , Y 2 O 3 , HfSiO 4 , SrTiO 3 , BaTiO 3 or nitrides such as Si 3 N 4 .
  • a metal oxide such as Nb 2 O 5 , Ta 2 O 5 , Al 2 O 3 , ZrO 2 , HfO 2 , SiO 2 , TiO 2 , La 2 O 3 , Y 2 O 3 , HfSiO 4 , SrTiO 3 , BaTiO 3 or nitrides such as Si 3 N 4 .
  • Many other dielectric materials can be used
  • Al 2 O 3 is a very common material to be deposited by ALD, and to create 10 nm thick layer, about 118 molecular layers OfAl 2 O 3 are needed.
  • Al 2 O 3 is relatively easy to deposit using highly volatile Trimethylaluminium ("TMA") as one of the precursors.
  • TMA Trimethylaluminium
  • the high volatility of TMA will help deep penetration of the dielectric 212 into the pores 206 in a process chamber carrying thousands or millions of assemblies.
  • the relative permittivity of the dielectric may be lower if the dielectric 212 is not closely packed, which is a possibility where an amorphous structure is made.
  • the relative permittivity of crystalline Al 2 O 3 is between 9 and 11 , depending on the optical axis direction of the crystal, but for ALD deposition it is between 7 and 8.
  • a thin barrier layer may be deposited to prevent diffusion of metal into the dielectric.
  • a common barrier for Copper is TaN.
  • the dielectric layer 212 is depicted as coating the bottom of the base terminal 228 in Fig. 14. This may be prevented by providing a special blocking material on the bottom of the base terminal 228 during the ALD process in which the dielectric 212 is deposited. Following the ALD process, the blocking material may be removed, thereby exposing terminal 228. Alternatively, the dielectric 212 is allowed to be deposited on the bottom of base terminal 228 and is removed later by etching or grinding.
  • the next step of the manufacturing process is depicted in Fig. 15, in which an insulator 232 is placed about the structure.
  • the insulator 232 may be made of glass or plastic.
  • the insulator 232 is useful for separating the two electrodes of the capacitor 200 and enabling the handling of the unit by soldering onto a PCB board or the like. This would be difficult in the absence of having an insulator 232 since the two electrodes are separated by a few or tens of nanometers.
  • the insulator 232 should have good adhesion to the dielectric 212. Alternatively, a thin layer of a material with good adhesion to insulator 232 is deposited after dielectric 212 is deposed.
  • the insulator 232 is attached to the structure on four sides of the scaffolding 204 if it is a cube or right prism, as depicted in figure 10, or to the circumference if the scaffolding is a cylinder (not shown), and not on the top facet and the bottom facet of the scaffolding 204 where the pores 206 ends. Glass could be melted and re-flowed around the unit. Plastic such as epoxy resin can be applied. The insulator 232 should be low out-gassing, so it does not damage the next ALD step. If glass is used, the thermal coefficient of expansion can be selected to match the combined coefficient of the other parts of the structure.
  • the second electrode of the capacitor 200 or the second electrical contact of an electrochemical capacitor or a battery is constructed as a plug 216.
  • the plug 216 is constructed by utilizing an ALD process where conductive material, similar or identical to the first conductor 208, is added to the structure.
  • the material used for the plug 216 is different from the material used for the first conductor 208 (e.g., one is a a metal while the other is a different metal, or one is a metallic material whereas the other is a semiconductor material or a nitride of a metal, etc.)
  • the plug 216 substantially fills the voids in the pores 206 not already filled by other materials.
  • the number of ALD molecular or atomic layers added to construct the plug 216 can be such that even the largest pore 206 is filled.
  • the ALD layer of the plug 216 will be designed not to fill the entirety of every pore 206, in which case a subsequent CVD, evaporation coating, sputtering or similar deposition process can be used to close and hermetically seal the open pores 206.
  • some trapped voids may exist within one or more of the pores 206, but if such voids are filled with low pressure gas from the CVD, evaporation coating or sputtering process and hermetically sealed from the environment, then the operation of the capacitor, electrochemical capacitor or a battery should not be compromised. In some embodiments, some pores 206 are left exposed and treated in subsequent manufacturing steps.
  • a thin barrier layer may be deposited after the plug 216 was deposited, to prepare the surface to the next step. Similar to the case with the dielectric 212, the plug 216 may be provided in such a manner as to coat the structure in its entirety.
  • a top terminal 244 is then provided in the next manufacturing step depicted in Fig. 17.
  • the top terminal 244 is depicted as being brazed to the plug 216 with a metallic filler 240.
  • soldering can be used. In both options, soldering or brazing can be performed in vacuum conditions or in a controlled environment, so that any void or exposure of the pores 206 is either filled or remains hermetically sealed and containing either vacuum or controlled material.
  • a top terminal 244 can be manufactured directly on the plug 216 by electroless plating, electroplating or any other process that is capable of producing thick layer of metal of desired composition. If the construction is made of many units sharing large bottom terminal 228 and top terminal 244, a step of sawing the structure in two orthogonal directions along the center of the insulation 232 is used to separate the individual capacitors, batteries or electrochemical capacitors.
  • the final step of manufacturing is to remove the unwanted plug 216 and dielectric 212 by etching or grinding. Some thickness of the insulation 232 and terminals 228, 244 may be removed as well. After the unwanted plug 216 and dielectric 212 have been removed, the finished capacitor 200 depicted in Fig. 9 is achieved. In some embodiments a solder barrier similar to solder barrier 130 in Fig. 1 may be installed if needed.
  • a capacitor was made from a scaffolding 204 of lxlxl mm 3 nano-pored AI 2 O 3 , with average pore 206 diameter of 70 nm, the conductor layer 208 is 10 nm thick, the dielectric layer 212 is 10 nm thick, and the plug 216 diameter is nominally 30 nm.
  • the pore 206 cross-section area covers half of the total available area of the scaffolding 204.
  • the number of pores 206 equals approximately:
  • the total capacitor electrode area is:
  • Such low resistance allows for fast energy charging and discharging, again a highly desirably capacitor quality.
  • a method of manufacture of batteries and electrochemical capacitors is similar to the previous embodiment with some changes.
  • the general construction will be the same, with the step of deposing dielectric 212 being replaced by steps of deposing layer of a anode 272, deposing layer of a solid electrolyte 274 and deposing layer of an cathode 276, as depicted in Fig. 11, all preferably deposited by ALD technology.
  • the layers may be depose in the reverse order to achieve similar performance.
  • the solid electrolyte 274 is ALD deposited, by way of example but not limitation, from: Lithium Phosphorous Oxynitride (Lipon), Lithium Lanthanum Titanate (LLT),
  • Beta-alumina complexed with a mobile ions such as Na , K , Li , Ag , H , Pb , Sr or
  • the anode 272 is ALD deposited, by way of example but not limitation from:
  • the insulation 232 should be installed before or after the solid electrolyte is deposed. Due to the structure, ions do not have to transport a distance 278 longer then tens or hundreds of nanometers during charge and discharge, thereby reducing the series resistance and charge and discharge time constants.
  • the electrical current flows in a battery or electrochemical capacitor from the outside electrical wiring to terminal 228, to filler 224, to the conductor 208 and from there to the anode 272. From the anode 272 to the cathode 276, the current will be carried by ions trough the ion transport distance 278, penetrating the solid electrolyte 274.
  • the current will travel to the outside wiring via the plug 216, filler 240 and terminal 244. Somewhat different series are possible if the cathode 276 is deposited adjacent the conductor 208 and the anode 272 adjacent the plug 216. In addition, the current flows in the reverse during the charge-discharge cycle.
  • the series resistance of the battery then is composed of mainly the ohmic resistance of conductor
  • the ion transport distance is small, on the order of few tens of nanometers, resulting in small resistance.
  • conductor 208 and plug 216 may be omitted, relying on the anode 272 and cathode 276 to conduct the electrical current along the pore length. In such an embodiment the electrical resistance of anode 272 and cathode 276 should be adequate for the final product.
  • the current ALD equipment and method of deposition where the precursors are pulsed into the process chamber for a short time may not be adequate. It may be desirable to have a long dwell time of each precursor in the chamber to allow the molecules time to reach the farther away surface inside the pores, and long purge time between precursors to remove most of the molecules from the pores before letting-in the next precursor. Inert gas may be used between precursors to aid in purging, again requiring long dwell time and long pumping. To avoid wasting too much precursors, the reaction chamber may be separated from the vacuum pump during the long dwell times.
  • the method of depositing is achieved then by first pumping down the process chamber to adequate vacuum, and then shutting a valve between the process chamber and the vacuum pump. A chemical dose of the first precursor is then released into the process chamber. The amount in the dose should be sufficient to coat the pores 206 and all exposed surfaces in the chamber with some to spare. The valve is then open and the leftover precursor and the reaction remainders are pumped down. A purge gas is then made to flow into the reaction chamber. During this step, the vacuum pump may be disconnected to allow longer dwell time of the purge gas, but this is not a must as the purge gas may be inexpensive and not a problem to the environment. The process continues with the second precursor being handled in a similar fashion as the first precursor.
  • the production process involved hundreds or thousands of molecular or atomic layers deposited by ALD technology, depending on the required parameters of the final product. Each cycle of layer deposition is longer then in other ALD processes. This is not a cost issue, since due to the deep and full penetration of the ALD process, thousands or millions of components can share one large process chamber, with a total volume that can be more than a meter cubed.
  • Figs. 18-20 alternative capacitor, electrochemical capacitor and/or battery constructions and methods of manufacturing the same will be described in accordance with at least some embodiments of the present invention. Similar to Figs. 1-17, Figs. 18-20 are not necessarily drawn to scale in an effort to facilitate a better and more clear understanding of the present disclosure.
  • an exemplary capacitor 300 is depicted as being constructed on a carrier 301.
  • the carrier 301 is a part of semiconductor chip, chip carrier, ceramic hybrid, Multi Chip Module ("MCM”), PCB and the like.
  • Carrier 301 is made of insulating material 332 on part of its surface.
  • a scaffolding 304 is provided to the required dimensions.
  • the scaffolding 304 is coated with the first conductor 308 and then attached to the carrier 301, for example by brazing with filler material 324.
  • the first conductive area 350 may correspond to an electrical contact pad or any other point of electrical connectivity on carrier 301.
  • capacitor 300 While only one capacitor 300 is depicted in Fig. 18, one skilled in the art will appreciate that a single carrier 301 may have one or multiple capacitors 300 constructed thereon according to a manufacturing process described herein. Moreover, multiple capacitors 300 can be attached to the carrier 301 simultaneously.
  • the scaffolding 304 may be first attached to the carrier 301 and then conductor 308 is deposited. If scaffolding 304 is made of a material that does not readily wet the filler 324, the scaffolding 304 may be coated first on its bottom facet that is intended to be brazed with metal or any conductive material that will wet the filler 324.
  • the manufacture of the capacitor 300 continues with the deposition of the dielectric 312.
  • the dielectric 312 is deposited over the entirety of the carrier 301, including the scaffolding 304 and areas without scaffolding 304. In locations where a second conducting area 352 is exposed (i.e., because it is not covered by the scaffolding 304), the dielectric 312 is generally not desirable. Accordingly, in some embodiments, the dielectric 312 which was deposited on the second conducting area 352 is one of mechanically grounded, etched away or removed by laser ablation.
  • a material that prevent the deposition of dielectric 312 is placed on the second conducting area before deposition of dielectric 312 and removed after dielectric 312 is deposed.
  • the function of the insulator 232 (in Fig.9-17) can now be performed by the insulation material 332 of the carrier 301. That is to say, a separate insulator is not necessarily required when the capacitor 300 is connected directly to the carrier 301. This is possible since the electrodes are not accessible and are protected in further steps.
  • the plug 316 is deposited. In some embodiments, the plug 316 is fashioned to fully fill the pores 306. Alternatively, a final step of CVD, evaporation coating or sputtering is used to finally fill or seal the pores 306. In addition to covering the scaffolding 304, the plug 316 also covers the dielectric 312 on the carrier 301 as well as the exposed second conducting area 352. Since the plug 316 operates as the second electrode of the capacitor 300, a capacitor 300 is established from the first conducting area 350 to the second conducting area 352.
  • a top layer of material 354 is then deposited using CVD, sputtering, electroless deposition, electroplating, or by any other mechanism that is known to deposit a relatively thick layer of material. This is done to ensure that the connection between the plug 316 and the second conducting area 352 is secure and has a relatively low resistance.
  • selective deposition can be done by, for example, electroplating, while some areas are protected with an un-conductive layer.
  • the scaffolding 304 can be produced in- situ on the carrier 301 by depositing Aluminum over the carrier 301, removing the Aluminum from the unwanted areas, and anodizing the Aluminum until the pores 306 reach the conductive material 350. Details of this process are described in U.S. Patent No. 6,838,297 to Iwasaki et al., the entire contents of which are hereby incorporated herein by reference.
  • electrochemical capacitors and batteries are constructed by replacing the step of depositing dielectric 312 with several steps of depositing, by ALD, cathode 276, solid electrolyte 274 and anode 272, in that or the reversed order, as depicted in Fig. 11.
  • the steps of depositing conductor 308 and plug 316 are omitted, and the cathode and anode carry the electrical current along the length of the pore 306.
  • the apparatus obtained from the above-described method is an on-module-type electrical element.
  • a capacitor having the depicted scaffolding 304, pores 306, layers of conductor 308, dielectric 312, and the like is created.
  • the on-module capacitor can be easily handed by the carrier 301 and mass fabrication of such on-module capacitors on a common carrier is easily obtained.
  • on-module electrochemical capacitors and batteries are created that include a cathode and anode layer as opposed to the dielectric layer 312 of the capacitor. Multiple on-module electrochemical capacitors and batteries can be produced on a single carrier 301, thereby facilitating the efficient creation of multiple electrical elements.
  • FIG. 19 another exemplary capacitor, battery, or electrochemical capacitor 400 is depicted in accordance with embodiments of the present invention.
  • an anodized nanopore capacitor 400 with a non-metallic conductor 408 and plug 416 is depicted.
  • the general dimensions of the capacitor, battery, or electrochemical capacitor 400 and its components are similar to one or both of the capacitors, battery, or electrochemical capacitor 100 and 200 and their components.
  • a nanopore capacitor, battery, or electrochemical capacitor 400 with nitride, suicide or other non- metal conductors 408 and plug 416 can achieve better resistance performance then existing electrolytic capacitors.
  • a capacitor constructed with at least one nitride, suicide or other non-metal conductor and/or plug can be manufactured more easily and cost effectively than comparable capacitors having a different type of pure metal as the conductor plug.
  • the ALD process for depositing nitride, suicide or other non-metal materials is somewhat easier to perform in the depth of the pores than the ALD process for depositing pure metals. To enable making the electrical contacts, there will be a need for metallic deposition, but only at the exposed surfaces and not in deep pores.
  • the capacitor, battery, or electrochemical capacitor 400 of Fig. 19 is depicted as having a scaffolding structure 404 with pores defined therein.
  • the scaffolding is made of nanopore material as descried above, where at least one pore transverses the scaffolding from a first facet to a second facet.
  • FIG. 20 Another embodiment of the present invention, depicted in Fig. 20, contemplates the use of a sintered material for the scaffolding 504 of the capacitor, battery, or electrochemical capacitor 500.
  • sintered metals may be utilized as the sintered material for the scaffolding 504.
  • Sintered stainless steel and sintered brass are commercially available for use as particulate filters with a pore size of around 500 nm, but can be made to have a smaller pore size.
  • the use as particulate filter demonstrates that there are many pores that transverse the sintered material from a first facet to a second facet
  • the capacitor, battery, or electrochemical capacitor 500 includes a sintered material scaffolding 504 which is a macroscopic lump of material with microscopic pores therein.
  • the pores are neither straight nor uniform, are intersecting and do not have a homogeneous diameter as in the scaffolding 404 of capacitor, battery, or electrochemical capacitor 400, but is still suitable for use as a capacitor, battery, or electrochemical capacitor.
  • At least one pore transverses the scaffolding from a first facet to a second facet.
  • the dimensions of the capacitor, battery, or electrochemical capacitor 400, 500 and its components are similar to the dimensions of the capacitor(s) depicted in Figs. 1-17.
  • the sintered material scaffolding 504 can be used as the conductor, to save one step of ALD deposition.
  • a good, un-oxidized surface should be maintained for most of the sintered material scaffolding 504.
  • the sintered material 504 as scaffolding only and not using its conducting capability, a capacitor, battery, or electrochemical capacitor can be manufactured with similar performance to an anodized Aluminum scaffolding-type capacitor 400.
  • the only difference between the capacitors 400 and 500 would be that the pores are not straight and aligned, but rather interconnected in the capacitor 500 having a sintered material scaffolding 504.
  • a layer of conductor 408, 508 is deposited on the whole surface of the scaffolding 404, 504.
  • Exemplary types of materials which may be used for the conductor 408, 508 include, without limitation, TiN, TaN, WN, TiSi 2 , PtSi, CoSi 2 , NiSi and WSi 2 .
  • Conductor 408, 508 act as the first electrode of the capacitor and as an electric conductor conveying electric current to the capacitor, battery or electrochemical capacitor structure.
  • top contact 436, 536 produced by deposition of metal, several metallic layers, composites or any material that have good adherence and electrical contact to the conductor 408, 508, that have reasonable electrical conductance and that will wet metals readily for further steps, with no or very shallow penetration into the pores of the scaffolding 404, 504 as discussed above.
  • a top terminal 444, 544 is brazed to the top contact 436, 536 with a top filler material 440, 540.
  • a dielectric layer 412, 512, is deposited on the whole surface of the conductor 408,
  • a plug 416, 516 is deposited on the whole surface of the dielectric 412, 512.
  • the material used to construct the plug 416, 516 is similar or identical to the material used to construct the conductor 408, 508.
  • the plug 416, 516 may or may not entirely fill the pores of the scaffolding 404, 504. The plug is performing the function of the second electrode of the capacitor and as an electric conductor conveying electric current to the capacitor, battery or electrochemical capacitor structure .
  • a bottom contact layer 420, 520 made of a material similar or the same as top contact 436, 536 is deposited onto the plug 416, 516, similar to the top contact 436, 536.
  • a bottom terminal 428, 528 is brazed to the bottom contact layer 420, 520 with a bottom filler material 424, 524.
  • an insulator 432, 532 is provided in such a way that it macroscopically separates any conductive material which is in electrical contact with conductor 408, 508 from any conductive material which is in electrical contact with plug 416, 516.
  • an electrochemical capacitor or a battery is constructed similar to the previous embodiment, but with the dialectic 412, 412 replaced with layers of anode 272, solid electrolyte 274 and cathode 276 as depicted in figure 11.
  • Figure 11 depicts part of a pore in scaffolding 404 or 504. It should be noted that lines depicted with respect to the scaffolding 404, 504 and the various other layers around it may or may not necessarily be straight, but the thickness of such layers is uniform.
  • an electrochemical capacitor or a battery is constructed similar to the previous embodiment, but without the conductor 208 and plug 216, relying on the cathode 276 and anode 272 to carry the electrical current along the pore length.
  • the insulator 432, 532 is separating between anode 272 and cathode 276. The location of anode 272 and cathode 276 may be reversed with similar performance.
  • Another embodiment of the current invention is the method of manufacturing capacitor 400, 500: a.
  • a powder preferably metal powder.
  • the conductivity of the metal powder does not significantly affect the electric performance.
  • the scaffolding should have a plurality of pores, where at least one pore transverses the scaffolding from a first facet to a second facet.
  • the conductor material can be annealed after deposition to improve conductivity.
  • the ALD process that is used to deposit the conductor should enable very deep penetration into pores with aspect ratio of 10,000:1 or more. Long dwell time of each precursor dose is desirable to enable full penetration, but this is not a cost issue due to the possibility of mass deposition in a very large chamber.
  • Deposition of the top contact material 436, 536 This is preferably a metal that will have good wetting of other metals. It is deposited by CVD, sputtering, evaporating, or any other deposition process that can produce a layer of the top contact 436, 536 on a first facet of the scaffolding 404, 504 with minimal penetration into pores.
  • ALD can be used as well if it is specifically designed to have low penetration. Having some metal deposited on any other outside surface area is not needed but will not cause a problem.
  • top contact 436, 536 may be flushed with a thin layer of noble metal to prevent oxidation until the next step.
  • a filler material 440, 540 is used as in common brazing art.
  • the top terminal 444, 544 is bulk metal such as copper or copper alloy, and the top filler 440, 540 is a brazing filler having a selected melting temperature.
  • the top terminal 444, 544 may be made of several layers of metals, with the outer layer ready for soldering into a PCB and preferably designed to act as a solder barrier.
  • the top terminal 444, 544 can be made from a metal alloy that has a similar thermal coefficient of expansion as the rest of the structure, to minimize stress, or it can be soft enough to accept thermal stress without damage to the structure.
  • the thickness of the filler should be sufficient to absorb the flatness difference between the top terminal 444, 544 and the end of the scaffolding 404, 504. It is preferred to braze without flux to avoid the need for cleaning, and therefore the top contact 436, 536 and the filler 440, 540 should be fairly free of oxidation. Inert atmosphere may be used between steps to prevent oxidation.
  • a thin layer of noble metal may be covering the filler 440, 540 before the brazing step. e.
  • Deposition of the dielectric 412, 512 that can be one of many available, such as AI2O3, Ta 2 O 5 , other metal oxides, Si 3 N 4 , layers of different materials or mixture of materials as discussed before.
  • Very deep penetration of insulating materials by ALD process, especially Al 2 O 3 is a known art.
  • ALD produces high quality deposited layers, with no pinholes, defects etc.
  • the deposition process can be designed to create an amorphous structure and not crystalline structure to improve the insulation quality.
  • a defect free and pinhole free layer throughout the inner surface of the pores is important. Again, long dwell time of each precursor dose is desirable to achieve full penetration to the whole depth of pores. f.
  • insulator 432, 532 on all the side surfaces of the scaffolding 404, 504, by re-flow or cast of glass or plastic material.
  • Glass should be made from a composition that have fairly similar thermal coefficient of expansion to the combined coefficient of the rest of the structure, so that stress over the size of the whole construction is not excessive. Plastic will be able to take the stress even with large difference in expansion coefficient. Plastic should be selected to have low out-gassing so as to not damage subsequent steps.
  • the insulator is very important to the usefulness of the final assembly, since without it there will be a difficulty of using the assembly by soldering wires to it or soldering it directly to a Printed Circuit Board due to the nanometer scale separation of the electrodes.
  • step f may be performed before step e without significant change in the performance.
  • a thin layer of glass and a layer of plastic or other mixed constructions can be used as well.
  • the glass layer can be on the order of one to few tens of microns thick, and deposited in this step f, while the plastic layer of few hundreds of microns will be placed later in the process after the plug material is removed from the surface of the glass. This way the need to place any plastic material in the ALD deposition chamber is avoided.
  • Deposition of the plug 416, 516 by ALD The plug 416, 516 is made of a conducting material either the same as the conductor 408, 508 or different material with similar characteristics.
  • the plug 416, 516 can include a thicker layer since the diameter is smaller. It is preferred that the plug 416, 516 will fill up the pore, but it is not a requirement. Again, as in the deposition of the conductor 408, 508, the plug 416, 516 deposition process should facilitate deep penetration into the pores. h. Deposition of the bottom contact material 420, 520 on a second facet of the assembly. This is a metal similar to the top contact 436, 536, and may be the same or a different metal. It is deposited by ALD, CVD, sputtering, evaporating, or any other deposition process that can produce a layer of the metal on one side of the scaffolding.
  • the bottom contact 420, 520 may plug the opening of any pore that was not filled by the plug 416, 516. i. Brazing the bottom terminal 428, 528 with the bottom filler 424, 524 to the bottom contact 420, 520, finally making sure that all pores that are not filled-up are sealed to prevent environmental materials from entering the pores.
  • the bottom terminal 428, 528 may be the same material as the top terminal 444, 544, but the bottom filler 424, 524 should have a lower melting temperature than the top filler 440, 540. This step is preferably performed in vacuum or in a selected atmosphere to control what is trapped in any open pore that is finally plugged. j.
  • top terminal and bottom terminal may be deposited on the top and bottom contacts directly by technologies that are capable of making thick layers of metal, such as electrochemical deposition or electroless deposition. Since such thick depositions technologies are made in liquid, if the top terminal is deposited this way, the electrolyte should be thoroughly removed from the pores before further steps. If the bottom terminal is deposited in such a way, the pores must be totally filled by the plug or fully plugged by the bottom contact to avoid any liquid being trapped in the pores.
  • terminals 428, 444, 528 and 544 can be deposited together before step j in a liquid environment directly.
  • diffusion-barrier layers may be deposited to prevent diffusion of materials from layer to layer. Some diffusion may be unavoidable or even desirable, for example between the contact layers and the filler material.
  • Seed layers may be used to enable good adhesion of the contact layers materials to the conductor and plug.
  • a metallic seed layer may be deposited by ALD or CVD on the conductor or plug, and a contact is then deposited by sputtering or evaporation on the seed layer.
  • an oxidation preventing layer may be deposited onto the top contact and the bottom contact, for example a thin layer of evaporated Gold, to prevent oxidation. This layer may diffuse into the filler material during brazing.
  • solder barrier similar to solder barrier 130 in Fig. 1 may be applied to improve assembly process onto PCB and the like, or alternatively it may be a part of the electrodes before brazing.
  • step e. of the previous embodiment which consist of depositing the dielectric layer and step f of installing the insulator are replaced by the following steps: m. Depositing anode 272 as depicted in Fig. 11, from materials discussed above for anode material. n. Depositing solid electrolyte 274 as depicted in Fig. 11, from materials discussed above for solid electrolytes. o. Placing the insulation 432, 532. This step may be performed before step n with similar product performance. p. Depositing cathode 276 as depicted in Fig. 11, from materials discussed above for cathode material. Note that this step and step m. can be swapped with similar product performance.
  • an electrochemical capacitor or a battery is manufactured without deposing the conductor 408, 508 and plug 416, 516, and where the anode 272 and cathode 274 are fulfilling the function of conducting current along the pores length in addition to the battery electrode function.
  • Low leakage current is a critical issue for a useful capacitor, battery or an electrochemical capacitor. Such leakage current is limited by utilizing an ALD deposition process to deposit the dielectric 412, 512 in case of capacitor or the solid electrolyte 274 in the case of battery or electrochemical capacitor.
  • ALD is known to achieve very conformal coating free of pores or defects, and which allows for good quality layer with low number of molecular layers.
  • the conductor layer is 6 nm thick, the insulation layer is 10 nm thick, and the plug diameter is nominally 38 nm, that is deposition of 19 nm thick layer.
  • the capacitance as calculated in the earlier embodiment example is 100 ⁇ F.
  • the conductor and plug are made of TiN with 1000 ⁇ Cm, or 10 "5 ⁇ m, which is achievable resistance for as deposited layer, and could be improved substantially by annealing or other techniques.
  • the tube of conductor has a thickness of 6 nm and mean diameter of 67 nm and also has about the same cross section area as the plug at 38 nm diameter.
  • the resistance is:
  • Tantalum electrolytic capacitor with 100 ⁇ F capacitance is known to have 0.9- 1.5 ⁇ series resistance. Accordingly, for excellent performance that improves over the performance of the currently available electrolytic capacitors, the use of poorly conducting material for the conductor and plug is sufficient.
  • the inductance will be very low due to the almost linear flow of the electrical current and the impedance is expected to stay the same up to very high frequencies, similar to multi-layer ceramic capacitors. Therefore, in contrast to current practice of placing a ceramic capacitor next to each electrolytic capacitor, such practice is not needed with capacitor 400, 500.
  • the short ion transport distance 278 of ions in the electrolyte as shown in Fig. 11, is basically a radial travel in a pore for a distance of few tens of nanometers.
  • the time the ions need to travel from anode to cathode and back is reduced, and there is also reduction of series resistance and increase the maximum allowable currents of charge/discharge compared to conventional electrochemical capacitors or batteries.
  • a top contact is deposited on one face of the scaffolding directly, for example by sputtering.
  • the top terminal is brazed to this top contact.
  • a conductor is ALD deposited, and an dielectric is ALD deposited.
  • the insulator is installed and then the plug is ALD deposited.
  • the bottom contact is deposited similar to the top contact and the bottom terminal is brazed.
  • Another variation is as follows: a top contact is deposited on one face of the scaffolding directly, for example by sputtering. Next, the top terminal is brazed to this top contact. Then a conductor is ALD deposited. Then the insulator is installed and an dielectric is ALD deposited and then the plug is ALD deposited. Finally the bottom contact is deposited and the bottom terminal is brazed.
  • an anodized nanopore scaffolding is made on an Aluminum structure that have a layer of different metal that stops the anodizing process and leave the pores end directly at the different metal. If the different metal is not oxidized by the electrolyte, after drying the scaffolding has already built-in top terminal. Then a conductor is ALD deposited, and a dielectric is ALD deposited. Then the insulator in installed and then the plug is ALD deposited. Finally the bottom contact is deposited and the bottom terminal is brazed.

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Abstract

La présente invention porte de façon générale sur le domaine de la chimie de surface séquentielle. Plus spécifiquement, elle porte sur des produits et des procédés pour fabriquer des produits en utilisant un dépôt de couche atomique (« ALD ») pour déposer un ou plusieurs matériaux sur une surface. ALD a la capacité de déposer un film sans défaut de haute qualité avec peu de couches moléculaires. La présente invention comprend, dans divers modes de réalisation, des procédés de fabrication de composants électroniques tels que des batteries, des condensateurs et des condensateurs électrochimiques par ALD, et sur les produits fabriqués par ces procédés.
PCT/US2010/023848 2008-02-13 2010-02-11 Condensateur électrique fritté et à nanopores, condensateur électrochimique et batterie et leur procédé de fabrication WO2010093761A1 (fr)

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EP10741701.6A EP2396817A4 (fr) 2009-02-12 2010-02-11 Condensateur électrique fritté et à nanopores, condensateur électrochimique et batterie et leur procédé de fabrication
JP2011550222A JP2012517717A (ja) 2009-02-12 2010-02-11 焼結ナノ細孔電気キャパシタ、電気化学キャパシタおよびバッテリーならびにその製造方法
US13/148,918 US20110310530A1 (en) 2008-02-13 2010-02-11 Sintered and nanopore electric capacitor, electrochemical capacitor and battery and method of making the same

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US12/370,394 US20100123993A1 (en) 2008-02-13 2009-02-12 Atomic layer deposition process for manufacture of battery electrodes, capacitors, resistors, and catalyzers
US25955009P 2009-11-09 2009-11-09
US61/259,550 2009-11-09
US26285109P 2009-11-19 2009-11-19
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JP6558439B2 (ja) * 2015-08-12 2019-08-14 株式会社村田製作所 コンデンサおよびその製造方法
WO2018151025A1 (fr) * 2017-02-14 2018-08-23 株式会社村田製作所 Condensateur
KR101973438B1 (ko) * 2017-07-19 2019-04-29 삼성전기주식회사 커패시터 부품
KR102460748B1 (ko) * 2017-09-21 2022-10-31 삼성전기주식회사 커패시터 부품
JP6907876B2 (ja) * 2017-10-19 2021-07-21 株式会社村田製作所 成膜方法
WO2024203050A1 (fr) * 2023-03-24 2024-10-03 パナソニックＩｐマネジメント株式会社 Condensateur électrolytique

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040217410A1 (en) * 2002-08-26 2004-11-04 Micron Technology, Inc. Enhanced atomic layer deposition
US20060249798A1 (en) * 2004-07-19 2006-11-09 Manning H M Methods of forming capacitors
US20070040204A1 (en) * 2005-08-17 2007-02-22 Pulugurtha Markondeya R Integrating three-dimensional high capacitance density structures
US20070134872A1 (en) * 2005-08-02 2007-06-14 Sandhu Gurtej S Methods of forming pluralities of capacitors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9824442D0 (en) * 1998-11-06 1999-01-06 Avx Ltd Manufacture of solid state capacitors
JP3478987B2 (ja) * 1999-02-10 2003-12-15 松下電器産業株式会社 固体電解コンデンサの製造方法
GB9922091D0 (en) * 1999-09-17 1999-11-17 Avx Ltd Manufacture of solid state capacitors
JP2003249417A (ja) * 2002-02-25 2003-09-05 Tdk Corp コンデンサ構造体およびその製造方法
JP2008507847A (ja) * 2004-07-23 2008-03-13 サンデュー・テクノロジーズ・エルエルシー 高エネルギー貯蔵密度及び低ｅｓｒを有するコンデンサ
US7473637B2 (en) * 2005-07-20 2009-01-06 Micron Technology, Inc. ALD formed titanium nitride films
FR2897467B1 (fr) * 2006-02-15 2009-04-03 St Microelectronics Crolles 2 Condensateur mim
US8385046B2 (en) * 2006-11-01 2013-02-26 The Arizona Board Regents Nano scale digitated capacitor
JP5203673B2 (ja) * 2007-10-30 2013-06-05 Ｎｅｃトーキン株式会社 固体電解コンデンサとその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040217410A1 (en) * 2002-08-26 2004-11-04 Micron Technology, Inc. Enhanced atomic layer deposition
US20060249798A1 (en) * 2004-07-19 2006-11-09 Manning H M Methods of forming capacitors
US20070134872A1 (en) * 2005-08-02 2007-06-14 Sandhu Gurtej S Methods of forming pluralities of capacitors
US20070040204A1 (en) * 2005-08-17 2007-02-22 Pulugurtha Markondeya R Integrating three-dimensional high capacitance density structures

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2396817A4 *

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10777366B2 (en) 2011-09-30 2020-09-15 Intel Corporation Method of increasing an energy density and an achievable power output of an energy storage device
US11031179B2 (en) 2014-09-02 2021-06-08 The Board Of Trustees Of The Leland Stanford Junior University Passive components for electronic circuits using conformal deposition on a scaffold
WO2016036854A1 (fr) * 2014-09-02 2016-03-10 The Board Of Trustees Of The Leland Stanford Junior University Composants passifs pour circuits électroniques utilisant le dépôt enrobant sur une ossature
US12084778B2 (en) 2015-02-13 2024-09-10 Entegris, Inc. Coatings for enhancement of properties and performance of substrate articles and apparatus
US12018382B2 (en) 2015-02-13 2024-06-25 Entegris, Inc. Coatings for enhancement of properties and performance of substrate articles and apparatus
US9809490B2 (en) 2015-07-02 2017-11-07 Panasonic Intellectual Property Management Co., Ltd. Method for producing oxynitride film by atomic layer deposition process
JP2017130669A (ja) * 2017-02-27 2017-07-27 インテル コーポレイション エネルギー貯蔵デバイスのエネルギー密度及び達成可能な電力出力を増やす方法
WO2019219621A1 (fr) * 2018-05-18 2019-11-21 Murata Manufacturing Co., Ltd. Composant de stockage d'énergie intégré
CN112189244A (zh) * 2018-05-18 2021-01-05 株式会社村田制作所 集成储能部件
US11581139B2 (en) 2018-05-18 2023-02-14 Murata Manufacturing Co., Ltd. Integrated energy storage component
TWI813688B (zh) * 2018-05-18 2023-09-01 日商村田製作所股份有限公司 積體能量儲存組分
EP3570307A1 (fr) * 2018-05-18 2019-11-20 Murata Manufacturing Co., Ltd. Composant de stockage d'énergie intégré
WO2020080993A1 (fr) * 2018-10-18 2020-04-23 Smoltek Ab Composant de stockage d'énergie métal-isolant-métal (mim) discret et procédé de fabrication
US12033797B2 (en) 2018-10-18 2024-07-09 Smoltek Ab Discrete metal-insulator-metal (MIM) energy storage component and manufacturing method
CN114914094A (zh) * 2021-02-09 2022-08-16 江苏和网源电气有限公司 一种高可靠性电容储能系统
CN114914094B (zh) * 2021-02-09 2023-10-27 江苏和网源电气有限公司 一种高可靠性电容储能系统

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