WO2010063614A2 - Ensemble de couches photovoltaïques - Google Patents

Ensemble de couches photovoltaïques Download PDF

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Publication number
WO2010063614A2
WO2010063614A2 PCT/EP2009/065702 EP2009065702W WO2010063614A2 WO 2010063614 A2 WO2010063614 A2 WO 2010063614A2 EP 2009065702 W EP2009065702 W EP 2009065702W WO 2010063614 A2 WO2010063614 A2 WO 2010063614A2
Authority
WO
WIPO (PCT)
Prior art keywords
layer
doped
semiconductor particles
electrode
photovoltaic
Prior art date
Application number
PCT/EP2009/065702
Other languages
German (de)
English (en)
Other versions
WO2010063614A3 (fr
Inventor
Manfred Schrey
Original Assignee
Fachhochschule Koeln
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fachhochschule Koeln filed Critical Fachhochschule Koeln
Publication of WO2010063614A2 publication Critical patent/WO2010063614A2/fr
Publication of WO2010063614A3 publication Critical patent/WO2010063614A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a photovoltaic layer arrangement for attachment to surfaces exposed to sunlight or carriers by, in particular, a painting process.
  • the object of the invention is to provide a Photovoitaik-Schichtan ⁇ rdnung, which can be applied in a simple manner to almost any shape shaped carrier or support surfaces.
  • a photovoltaic layer arrangement is proposed with the invention, which is provided with an electrically conductive first electrode layer, a transparent to solar radiation electrically conductive second
  • Electrode layer an arranged between the two electrode layers, electrically insulating investment material layer and - a plurality of semiconductor particles, each having a p-doped region and an n-doped region and a pn junction, wherein the semiconductor particles are arranged side by side embedded in the embedding mass layer such in that the p-doped and the n-doped th regions over each of the same side of the Einbettrnassentik protrude from this and protrude in the jeweüs adjacent first or second electrode layer for electrical connection thereto,
  • the essential feature of the inventive concept of the photovoltaic layer arrangement is the fact that the photovoltaic arrangement in the form of individual layers can be applied to a carrier or a carrier surface.
  • doubly doped semiconductor particles are used, which are embedded in an embedding mass layer which has an electrically insulating effect. Every semiconductor particle! has a p-doped region, in n-doped region, and a pn junction between these regions.
  • the semiconductor particles are, for example, photodiode dies that have been separated by cutting a wafer, or also fragments of, for example, so-called “rejected wafers", wherein each fragment has a pn junction with (exactly one) n-doped and (exactly one) p-doped region has.
  • the semiconductor particles are all the same electrically aligned, which can be realized for example by introducing the semiconductor particles in an electric field.
  • the p-doped regions (and the n-doped regions) of all semiconductor particles in each case in the same direction (namely, for example, upwards or downwards).
  • the Halbieiterpartike! be arranged with their p- and n-area alignments at right angles or at another, ie acute angle to the plane of extension of the investment.
  • the semiconductor particles are embedded in the embedding mass layer in such a way that their p-doped regions project beyond the one main side of the embedding mass layer and the n-doped regions of all semiconductor particles over the other main surface of the embedding mass layer.
  • a potting compound layer is now arranged between two electrically conductive electrode layers, then the individual semiconductor particles are electrically contacted via the electrode layers. This results in a layer structure with a plurality of photodiodes forming a monoparticle layer.
  • the solar layer exposed to the electrode layer is transparent to the solar radiation, which for the carrier surface or the carrier facing Electrode layer does not have to be required. In this case, it is particularly appropriate if this (lower) electrode layer reflects the solar radiation.
  • the irregular surface structure of the silicon particles makes the light capture factor considerably larger than in the case of conventional solar cells, which have a smooth, highly reflective surface.
  • the advantage of the photovoltaic layer arrangement according to the invention is to be seen in the fact that all layers such as lacquer can be applied to a support or a substrate.
  • an OSC (organic semi coductor) material comes into question.
  • you can also use a materia! use which acts on itself electrically insulating and is provided with electrically conductive particles.
  • silver lacquer can also be used for the electrically side electrode layers.
  • the investment layer is expediently, for example, polyisoprene.
  • the semiconductor particles are expediently doped silicon particles (Si particles), which impart to the layer arrangement a dark-silver optical appearance.
  • copper-indium-diseumide particles (CuInSe) can be used, which makes the layer arrangement appear optically black.
  • other semiconductor material particles such as gallium arsenide (GaAs) can be used.
  • the size of the semiconductor particles moves in the ⁇ m range, between 1 ⁇ m and 400 ⁇ m (the thickness of silicon wafers is typically 365 ⁇ m), preferably between 10 ⁇ m and 100 ⁇ m and in particular between 20 ⁇ m and 30 ⁇ m.
  • a factory-prepared, electrically insulating layer with embedded Haibieiterpumblen as described above is suitable.
  • This layer can then be applied to an electrically conductive electrode layer applied to a carrier, the semiconductor particles being pressed with their regions projecting beyond the layer into the not yet hardened electrode layer.
  • the layer with the embedded semiconductor materials is expediently flexible, so that it can adapt to the contour of the substrate or of the carrier.
  • the second electrode layer is then applied, which, as in the case of the application of the first electrode layer, can take place in the manner of a lacquer application.
  • the photovoltaic layer according to the invention can be applied, for example, to vehicles (here in particular on the vehicle roofs), the photovoltaic layer arrangement depending on the choice of Halbieiterpumble example, silver or black acts. Both are similar to a Metaliic finish.
  • a photovoltaic layer assembly 10 is shown, which has been created by applying several layers, such as in a multi-layer paint on, for example, a vehicle car roof 12.
  • This layer serves the mechanical or thermal adaptation of the photovoltaic layer arrangement 10 to the carrier (in this case the vehicle roof 12).
  • the intermediate layer 14 is not absolutely necessary and may be omitted depending on the nature of the carrier.
  • the photovoltaic layer arrangement 10 comprises an electrically conductive first electrode layer 16 of, for example, a semi-conductive polymer material (OSC), which can be up to 100 ⁇ m thick.
  • the material of this first electrode layer 16 should preferably be transparent to sunlight.
  • the investment material layer 18 is electrically insulating and permeable to solar radiation.
  • a material is particularly suitable, for example, polyisoprene.
  • each half-liter particle 24 has a p-doped region 26 and an n-doped region 28, a pn junction 30 being formed between the two regions.
  • the semi-conductor particles 24 are electrically aligned the same, which means that (with reference to the illustration in the drawing) their p-doped regions 26 point upwards and their n-doped regions 28 face downwards.
  • Another special feature is that each semiconductor particle 24 protrudes from the embedding mass layer 18 on both sides.
  • the electrical alignment of the semiconductor particles 24 takes place, for example, by applying an electric field of suitable strength, namely at a time when the embedding mass layer has not yet cured in such a way. that the semiconductor particles 24 can no longer align or move in this layer.
  • the material used for the embedding mass layer 18 can not necessarily be hardenable materials.
  • Flexible materials for example elastomers
  • the investment material layer with its semiconductor particles is flexible.
  • the average size of the semiconductor particles 24 is for example 20 microns to 30 microns.
  • the thickness of the embedding mass layer 18 is selected accordingly, in such a way that the semiconductor particles 24 protrude on both sides of the embedding mass layer 18.
  • the second electrode layer 32 expediently has a thickness of only 5 ⁇ m to 10 ⁇ m.
  • a protective layer 34 which is likewise transparent to solar radiation, can also be applied to this second electrode layer 32, which can preferably be electrically insulating but also electrically conductive.
  • the two electrode layers 16, 32 are electrically connected to the n-doped regions 28 or p-doped regions 26 of the semiconductor particles 24. When exposed to sunlight, an electrical voltage arises between these layers which can be used to operate electrical consumers (the vehicle).
  • the described photovoltaic layer assembly 10 serves to generate electricity from solar radiation, i. from light of the wavelengths of substantially 320 Nm to 1000 Nm.
  • solar radiation i. from light of the wavelengths of substantially 320 Nm to 1000 Nm.
  • the photovoltaic layer arrangement on substrates or carriers one can make use of the techniques of painting processes. In particular, no high-temperature processes for applying the photovoltaic layer arrangement are required and a vacuum process is not provided.
  • the Photovoitaik layer arrangement can be essentially on aüen side ends or non-conductive surfaces such as facade panels, roofs, noise barriers or the like. muster.
  • the photovoltaic layer arrangement according to the invention a monolayer of individual, adjacently arranged doubly doped HaIb- conductor particles, which viewed in the thickness direction of the Einbettmassen für not form agglomerations to transfer resistances vermei ⁇ , Aiso is advantageous in that each semiconductor particle is electrically connected to the electrode layers directly.
  • the semiconducting Particles of the particles in the case of the use of transparent materials for the electrode layer facing the sunlit side of the photovoltaic layer arrangement) become visually appealing.
  • the subsequent assembly is already known to align the solar particles optimally to the sunlight.
  • the particles can be aligned to the mean solar angle of incidence (compass direction 180 °, angle to the surface 42 °).

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un ensemble de couches photovoltaïques (10) comprenant une première couche d'électrode électroconductrice (16) et une seconde couche d'électrode électroconductrice (32) transparente au rayonnement solaire. L'ensemble de couches photovoltaïques (10) comprend également une couche de matière d'inclusion (18) électriquement isolante, placée entre les deux couches d'électrode (16, 32), et une pluralité de particules de semiconducteur (24) qui présentent chacune une zone dopée p (26), une zone dopée n (28) et une jonction p-n (30). Les particules de semiconducteur (24) sont incorporées dans la couche de matière d'inclusion (18) en juxtaposition, de sorte que les zones dopées p et les zones dopées n (26, 28) font saillie de la couche de matière d'inclusion (18) par le même côté respectif (22, 20) et pénètrent dans la première ou la seconde couche d'électrode adjacente respective (16, 32) pour permettre une connexion électrique avec cette dernière.
PCT/EP2009/065702 2008-12-01 2009-11-24 Ensemble de couches photovoltaïques WO2010063614A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008059728.7 2008-12-01
DE200810059728 DE102008059728A1 (de) 2008-12-01 2008-12-01 Photovoltaik-Schichtanordnung

Publications (2)

Publication Number Publication Date
WO2010063614A2 true WO2010063614A2 (fr) 2010-06-10
WO2010063614A3 WO2010063614A3 (fr) 2010-11-25

Family

ID=42134086

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/065702 WO2010063614A2 (fr) 2008-12-01 2009-11-24 Ensemble de couches photovoltaïques

Country Status (2)

Country Link
DE (1) DE102008059728A1 (fr)
WO (1) WO2010063614A2 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4614835A (en) * 1983-12-15 1986-09-30 Texas Instruments Incorporated Photovoltaic solar arrays using silicon microparticles
US5466301A (en) * 1994-06-29 1995-11-14 Texas Instruments Incorporated Solar cell having an output-increasing, protective cover
US20060086384A1 (en) * 2002-06-21 2006-04-27 Josuke Nakata Light receiving or light emitting device and itsd production method
US20070089782A1 (en) * 2003-10-02 2007-04-26 Scheuten Glasgroep Spherical or grain-shaped semiconductor element for use in solar cells and method for producing the same; method for producing a solar cell comprising said semiconductor element and solar cell
US20070089780A1 (en) * 2003-10-02 2007-04-26 Scheuten Glasgroep Serial circuit of solar cells with integrated semiconductor bodies, corresponding method for production and module with serial connection

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001295987B2 (en) * 2001-10-19 2005-10-20 Sphelar Power Corporation Light emitting or light receiving semiconductor module and method for manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4614835A (en) * 1983-12-15 1986-09-30 Texas Instruments Incorporated Photovoltaic solar arrays using silicon microparticles
US5466301A (en) * 1994-06-29 1995-11-14 Texas Instruments Incorporated Solar cell having an output-increasing, protective cover
US20060086384A1 (en) * 2002-06-21 2006-04-27 Josuke Nakata Light receiving or light emitting device and itsd production method
US20070089782A1 (en) * 2003-10-02 2007-04-26 Scheuten Glasgroep Spherical or grain-shaped semiconductor element for use in solar cells and method for producing the same; method for producing a solar cell comprising said semiconductor element and solar cell
US20070089780A1 (en) * 2003-10-02 2007-04-26 Scheuten Glasgroep Serial circuit of solar cells with integrated semiconductor bodies, corresponding method for production and module with serial connection

Also Published As

Publication number Publication date
WO2010063614A3 (fr) 2010-11-25
DE102008059728A1 (de) 2010-06-02

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