WO2010063614A3 - Ensemble de couches photovoltaïques - Google Patents

Ensemble de couches photovoltaïques Download PDF

Info

Publication number
WO2010063614A3
WO2010063614A3 PCT/EP2009/065702 EP2009065702W WO2010063614A3 WO 2010063614 A3 WO2010063614 A3 WO 2010063614A3 EP 2009065702 W EP2009065702 W EP 2009065702W WO 2010063614 A3 WO2010063614 A3 WO 2010063614A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
investment material
material layer
electrode layer
layer arrangement
Prior art date
Application number
PCT/EP2009/065702
Other languages
German (de)
English (en)
Other versions
WO2010063614A2 (fr
Inventor
Manfred Schrey
Original Assignee
Fachhochschule Koeln
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fachhochschule Koeln filed Critical Fachhochschule Koeln
Publication of WO2010063614A2 publication Critical patent/WO2010063614A2/fr
Publication of WO2010063614A3 publication Critical patent/WO2010063614A3/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281Shape of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un ensemble de couches photovoltaïques (10) comprenant une première couche d'électrode électroconductrice (16) et une seconde couche d'électrode électroconductrice (32) transparente au rayonnement solaire. L'ensemble de couches photovoltaïques (10) comprend également une couche de matière d'inclusion (18) électriquement isolante, placée entre les deux couches d'électrode (16, 32), et une pluralité de particules de semiconducteur (24) qui présentent chacune une zone dopée p (26), une zone dopée n (28) et une jonction p-n (30). Les particules de semiconducteur (24) sont incorporées dans la couche de matière d'inclusion (18) en juxtaposition, de sorte que les zones dopées p et les zones dopées n (26, 28) font saillie de la couche de matière d'inclusion (18) par le même côté respectif (22, 20) et pénètrent dans la première ou la seconde couche d'électrode adjacente respective (16, 32) pour permettre une connexion électrique avec cette dernière.
PCT/EP2009/065702 2008-12-01 2009-11-24 Ensemble de couches photovoltaïques WO2010063614A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008059728.7 2008-12-01
DE200810059728 DE102008059728A1 (de) 2008-12-01 2008-12-01 Photovoltaik-Schichtanordnung

Publications (2)

Publication Number Publication Date
WO2010063614A2 WO2010063614A2 (fr) 2010-06-10
WO2010063614A3 true WO2010063614A3 (fr) 2010-11-25

Family

ID=42134086

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/065702 WO2010063614A2 (fr) 2008-12-01 2009-11-24 Ensemble de couches photovoltaïques

Country Status (2)

Country Link
DE (1) DE102008059728A1 (fr)
WO (1) WO2010063614A2 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4614835A (en) * 1983-12-15 1986-09-30 Texas Instruments Incorporated Photovoltaic solar arrays using silicon microparticles
US5466301A (en) * 1994-06-29 1995-11-14 Texas Instruments Incorporated Solar cell having an output-increasing, protective cover
US20060086384A1 (en) * 2002-06-21 2006-04-27 Josuke Nakata Light receiving or light emitting device and itsd production method
US20070089780A1 (en) * 2003-10-02 2007-04-26 Scheuten Glasgroep Serial circuit of solar cells with integrated semiconductor bodies, corresponding method for production and module with serial connection
US20070089782A1 (en) * 2003-10-02 2007-04-26 Scheuten Glasgroep Spherical or grain-shaped semiconductor element for use in solar cells and method for producing the same; method for producing a solar cell comprising said semiconductor element and solar cell

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1220277C (zh) * 2001-10-19 2005-09-21 中田仗祐 发光或感光半导体组件及其制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4614835A (en) * 1983-12-15 1986-09-30 Texas Instruments Incorporated Photovoltaic solar arrays using silicon microparticles
US5466301A (en) * 1994-06-29 1995-11-14 Texas Instruments Incorporated Solar cell having an output-increasing, protective cover
US20060086384A1 (en) * 2002-06-21 2006-04-27 Josuke Nakata Light receiving or light emitting device and itsd production method
US20070089780A1 (en) * 2003-10-02 2007-04-26 Scheuten Glasgroep Serial circuit of solar cells with integrated semiconductor bodies, corresponding method for production and module with serial connection
US20070089782A1 (en) * 2003-10-02 2007-04-26 Scheuten Glasgroep Spherical or grain-shaped semiconductor element for use in solar cells and method for producing the same; method for producing a solar cell comprising said semiconductor element and solar cell

Also Published As

Publication number Publication date
DE102008059728A1 (de) 2010-06-02
WO2010063614A2 (fr) 2010-06-10

Similar Documents

Publication Publication Date Title
WO2007126441A3 (fr) Cellules photovoltaïques à contact arrière
WO2012037191A3 (fr) Ensemble de cellules photovoltaïques amélioré et procédé associé
WO2010071341A3 (fr) Cellule solaire et procédé pour la fabriquer
PH12017500341A1 (en) Solar cell and method for producing thereof
WO2008115814A3 (fr) Cellules solaires
EP2731137A3 (fr) Dispositif électroluminescent
EP4300597A3 (fr) Module de cellule solaire
WO2006135443A3 (fr) Cellules photovoltaiques a contact repos
MY177509A (en) Trench process and structure for backside contact solar cells with polysilicon doped regions
RU2012141985A (ru) Фотоэлектрические элементы с обработанными поверхностями и их применение
EP2421057A3 (fr) Cellule solaire
JP2009200267A5 (fr)
WO2007106756A3 (fr) Cellule solaire haute efficacité à trous d'interconnexion isolés
WO2010037102A3 (fr) Module solaire à intégration monolithique
WO2010013972A3 (fr) Pile solaire et procédé de fabrication correspondant
EP2360744A3 (fr) Diode électroluminescente et son procédé de fabrication
WO2011084053A3 (fr) Module de panneaux solaires et procédé de fabrication d'un tel module de panneaux solaires
WO2010120233A3 (fr) Cellule photovoltaïque multi-jonction avec nanofils
EP1811578A4 (fr) Photodiode avalanche
WO2013105031A3 (fr) Procede pour realiser un module photovoltaïque avec deux etapes de gravure p2 et p3 et module photovoltaïque correspondant
US10714643B2 (en) Back side contact layer for PV module with modified cell connection topology
WO2010013956A3 (fr) Cellule solaire, procédé de fabrication associé et module de cellule solaire
MY169379A (en) Solar cell and solar cell module
WO2011014792A3 (fr) Cellule photovoltaïque à doigts semi-conducteurs
WO2011091959A8 (fr) Procédé de dopage élevé local et de mise en contact d'une structure semi-conductrice qui est une cellule solaire ou une ébauche de cellule solaire

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09759939

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09759939

Country of ref document: EP

Kind code of ref document: A2