RU2012141985A - Фотоэлектрические элементы с обработанными поверхностями и их применение - Google Patents

Фотоэлектрические элементы с обработанными поверхностями и их применение Download PDF

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Publication number
RU2012141985A
RU2012141985A RU2012141985/28A RU2012141985A RU2012141985A RU 2012141985 A RU2012141985 A RU 2012141985A RU 2012141985/28 A RU2012141985/28 A RU 2012141985/28A RU 2012141985 A RU2012141985 A RU 2012141985A RU 2012141985 A RU2012141985 A RU 2012141985A
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vmj
layers
photovoltaic cell
buffer zone
cell
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RU2012141985/28A
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English (en)
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Бернард Л. САТЕР
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Гринфилд Солар Корп.
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Priority claimed from US12/535,952 external-priority patent/US20100037937A1/en
Priority claimed from US12/536,982 external-priority patent/US20100037943A1/en
Priority claimed from US12/536,987 external-priority patent/US8106293B2/en
Priority claimed from US12/536,992 external-priority patent/US8293079B2/en
Application filed by Гринфилд Солар Корп. filed Critical Гринфилд Солар Корп.
Publication of RU2012141985A publication Critical patent/RU2012141985A/ru

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

1. Фотоэлектрический элемент, содержащий:многопереходный (VMJ) фотоэлектрический элемент с вертикальными переходами, который включает в себя множество соединенных в одно целое единичных элемента, причем каждый единичный элемент имеет множество слоев, которые формируют PN переход(ы); ибуферную зону, которая защищает множество слоев от по меньшей мере одного из давления и растяжения, оказываемых на VMJ фотоэлектрический элемент.2. Фотоэлектрический элемент по п.1, в котором буферная зона реализуется в виде сформированного бандажа на поверхности конечного слоя единичного элемента.3. Фотоэлектрический элемент по п.1, в котором буферный слой включает в себя слой сильнолегированного кремния очень малого сопротивления.4. Способ защиты активных слоев в VMJ элементе, содержащий:соединение в единое целое множества активных слоев с целью формирования VMJ элемента; изащиту активных слоев от по меньшей мере одного из давления, растяжения, момента и скручивания, приложенных к VMJ элементу, посредством буферной зоны.5. Способ по п.4, также содержащий формирование буферной зоны с очень низким сопротивлением как части конечных слоев VMJ элемента.6. Способ по п.4, также содержащий выполнение омических контактов между внешними слоями единичных элементов.

Claims (6)

1. Фотоэлектрический элемент, содержащий:
многопереходный (VMJ) фотоэлектрический элемент с вертикальными переходами, который включает в себя множество соединенных в одно целое единичных элемента, причем каждый единичный элемент имеет множество слоев, которые формируют PN переход(ы); и
буферную зону, которая защищает множество слоев от по меньшей мере одного из давления и растяжения, оказываемых на VMJ фотоэлектрический элемент.
2. Фотоэлектрический элемент по п.1, в котором буферная зона реализуется в виде сформированного бандажа на поверхности конечного слоя единичного элемента.
3. Фотоэлектрический элемент по п.1, в котором буферный слой включает в себя слой сильнолегированного кремния очень малого сопротивления.
4. Способ защиты активных слоев в VMJ элементе, содержащий:
соединение в единое целое множества активных слоев с целью формирования VMJ элемента; и
защиту активных слоев от по меньшей мере одного из давления, растяжения, момента и скручивания, приложенных к VMJ элементу, посредством буферной зоны.
5. Способ по п.4, также содержащий формирование буферной зоны с очень низким сопротивлением как части конечных слоев VMJ элемента.
6. Способ по п.4, также содержащий выполнение омических контактов между внешними слоями единичных элементов.
RU2012141985/28A 2008-08-14 2012-10-02 Фотоэлектрические элементы с обработанными поверхностями и их применение RU2012141985A (ru)

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
US8892108P 2008-08-14 2008-08-14
US8893608P 2008-08-14 2008-08-14
US61/088,921 2008-08-14
US61/088,936 2008-08-14
US8938908P 2008-08-15 2008-08-15
US61/089,389 2008-08-15
US9253108P 2008-08-28 2008-08-28
US61/092,531 2008-08-28
US12/535,952 2009-08-05
US12/535,952 US20100037937A1 (en) 2008-08-15 2009-08-05 Photovoltaic cell with patterned contacts
US12/536,992 2009-08-06
US12/536,987 2009-08-06
US12/536,982 US20100037943A1 (en) 2008-08-14 2009-08-06 Vertical multijunction cell with textured surface
US12/536,987 US8106293B2 (en) 2008-08-14 2009-08-06 Photovoltaic cell with buffer zone
US12/536,992 US8293079B2 (en) 2008-08-28 2009-08-06 Electrolysis via vertical multi-junction photovoltaic cell
US12/536,982 2009-08-06

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AU (1) AU2009281960A1 (ru)
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CA (2) CA2733976C (ru)
IL (1) IL211205A0 (ru)
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TWI420798B (zh) * 2010-12-03 2013-12-21 Mh Solar Co Ltd 混成式太陽能發電系統
TWI420782B (zh) * 2010-12-06 2013-12-21 Mh Solar Co Ltd 一種可自供電之電子裝置
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MX2011001738A (es) 2011-08-12
CA2820184A1 (en) 2010-02-18
CN103354247A (zh) 2013-10-16
IL211205A0 (en) 2011-04-28
CN103337547A (zh) 2013-10-02
EP2327107A1 (en) 2011-06-01
BRPI0917838A2 (pt) 2017-02-14
JP2012500474A (ja) 2012-01-05
CA2733976A1 (en) 2010-02-18
CN103337546B (zh) 2017-03-01
AU2009281960A1 (en) 2010-02-18
CA2733976C (en) 2015-12-22
RU2011109164A (ru) 2012-09-20
TW201013951A (en) 2010-04-01
TWI535042B (zh) 2016-05-21
CN103354247B (zh) 2016-10-05
CN102171840A (zh) 2011-08-31
WO2010019685A1 (en) 2010-02-18
CN103337546A (zh) 2013-10-02
RU2472251C2 (ru) 2013-01-10
WO2010019685A4 (en) 2010-05-06

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