CA2733976C - Photovoltaic cells with processed surfaces and related applications - Google Patents
Photovoltaic cells with processed surfaces and related applications Download PDFInfo
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- CA2733976C CA2733976C CA2733976A CA2733976A CA2733976C CA 2733976 C CA2733976 C CA 2733976C CA 2733976 A CA2733976 A CA 2733976A CA 2733976 A CA2733976 A CA 2733976A CA 2733976 C CA2733976 C CA 2733976C
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- 238000000034 method Methods 0.000 claims abstract description 81
- 238000000576 coating method Methods 0.000 claims description 107
- 239000011248 coating agent Substances 0.000 claims description 96
- 239000000463 material Substances 0.000 claims description 75
- 239000004065 semiconductor Substances 0.000 claims description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 50
- 229910052710 silicon Inorganic materials 0.000 claims description 50
- 239000010703 silicon Substances 0.000 claims description 50
- 235000012431 wafers Nutrition 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000005275 alloying Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 61
- 239000002184 metal Substances 0.000 abstract description 61
- 230000006798 recombination Effects 0.000 abstract description 58
- 238000005215 recombination Methods 0.000 abstract description 58
- 238000004519 manufacturing process Methods 0.000 abstract description 50
- 239000003989 dielectric material Substances 0.000 abstract description 25
- 239000000969 carrier Substances 0.000 abstract description 23
- 230000009467 reduction Effects 0.000 abstract description 15
- 238000000059 patterning Methods 0.000 abstract description 14
- 230000008901 benefit Effects 0.000 abstract description 13
- 230000008569 process Effects 0.000 abstract description 13
- 210000004027 cell Anatomy 0.000 description 459
- 239000010410 layer Substances 0.000 description 167
- 238000005868 electrolysis reaction Methods 0.000 description 52
- 238000010586 diagram Methods 0.000 description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 27
- 239000002243 precursor Substances 0.000 description 26
- 239000003792 electrolyte Substances 0.000 description 24
- 229910052739 hydrogen Inorganic materials 0.000 description 22
- 239000001257 hydrogen Substances 0.000 description 22
- 238000000151 deposition Methods 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 19
- 238000013461 design Methods 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 18
- 238000012545 processing Methods 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 17
- 238000005755 formation reaction Methods 0.000 description 17
- 238000001465 metallisation Methods 0.000 description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 238000006722 reduction reaction Methods 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- 230000002829 reductive effect Effects 0.000 description 14
- 238000001228 spectrum Methods 0.000 description 14
- 230000004044 response Effects 0.000 description 12
- 230000002411 adverse Effects 0.000 description 11
- 230000031700 light absorption Effects 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 9
- 238000005094 computer simulation Methods 0.000 description 9
- 238000011161 development Methods 0.000 description 9
- 230000018109 developmental process Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 230000003595 spectral effect Effects 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 230000005611 electricity Effects 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 230000000116 mitigating effect Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 239000008151 electrolyte solution Substances 0.000 description 6
- 229940021013 electrolyte solution Drugs 0.000 description 6
- 239000006023 eutectic alloy Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000035515 penetration Effects 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910000673 Indium arsenide Inorganic materials 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 230000003993 interaction Effects 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 150000001450 anions Chemical class 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 239000010411 electrocatalyst Substances 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 230000003252 repetitive effect Effects 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- -1 water) Chemical class 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 238000013082 photovoltaic technology Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000000441 X-ray spectroscopy Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000000254 damaging effect Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(IV) oxide Inorganic materials O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241001589086 Bellapiscis medius Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010205 computational analysis Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- HDDSHPAODJUKPD-UHFFFAOYSA-N fenbendazole Chemical compound C1=C2NC(NC(=O)OC)=NC2=CC=C1SC1=CC=CC=C1 HDDSHPAODJUKPD-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 210000004692 intercellular junction Anatomy 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000275 quality assurance Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229940092174 safe-guard Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000004574 scanning tunneling microscopy Methods 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Life Sciences & Earth Sciences (AREA)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA2820184A CA2820184A1 (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
Applications Claiming Priority (17)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8893608P | 2008-08-14 | 2008-08-14 | |
| US8892108P | 2008-08-14 | 2008-08-14 | |
| US61/088,921 | 2008-08-14 | ||
| US61/088,936 | 2008-08-14 | ||
| US8938908P | 2008-08-15 | 2008-08-15 | |
| US61/089,389 | 2008-08-15 | ||
| US9253108P | 2008-08-28 | 2008-08-28 | |
| US61/092,531 | 2008-08-28 | ||
| US12/535,952 | 2009-08-05 | ||
| US12/535,952 US20100037937A1 (en) | 2008-08-15 | 2009-08-05 | Photovoltaic cell with patterned contacts |
| US12/536,987 US8106293B2 (en) | 2008-08-14 | 2009-08-06 | Photovoltaic cell with buffer zone |
| US12/536,982 US20100037943A1 (en) | 2008-08-14 | 2009-08-06 | Vertical multijunction cell with textured surface |
| US12/536,992 | 2009-08-06 | ||
| US12/536,987 | 2009-08-06 | ||
| US12/536,982 | 2009-08-06 | ||
| US12/536,992 US8293079B2 (en) | 2008-08-28 | 2009-08-06 | Electrolysis via vertical multi-junction photovoltaic cell |
| PCT/US2009/053576 WO2010019685A1 (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2820184A Division CA2820184A1 (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2733976A1 CA2733976A1 (en) | 2010-02-18 |
| CA2733976C true CA2733976C (en) | 2015-12-22 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2733976A Expired - Fee Related CA2733976C (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
| CA2820184A Abandoned CA2820184A1 (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2820184A Abandoned CA2820184A1 (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
Country Status (11)
| Country | Link |
|---|---|
| EP (1) | EP2327107A1 (ru) |
| JP (1) | JP2012500474A (ru) |
| CN (4) | CN103337546B (ru) |
| AU (1) | AU2009281960A1 (ru) |
| BR (1) | BRPI0917838A2 (ru) |
| CA (2) | CA2733976C (ru) |
| IL (1) | IL211205A0 (ru) |
| MX (1) | MX2011001738A (ru) |
| RU (2) | RU2472251C2 (ru) |
| TW (1) | TWI535042B (ru) |
| WO (1) | WO2010019685A1 (ru) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI420798B (zh) * | 2010-12-03 | 2013-12-21 | Mh Solar Co Ltd | 混成式太陽能發電系統 |
| TWI424657B (zh) * | 2010-12-03 | 2014-01-21 | Mh Solar Co Ltd | 具加熱裝置之聚光型太陽能光電系統 |
| TWI418046B (zh) * | 2010-12-03 | 2013-12-01 | Mh Solar Co Ltd | 一種多接面太陽能電池之製程方法 |
| TWI420782B (zh) * | 2010-12-06 | 2013-12-21 | Mh Solar Co Ltd | 一種可自供電之電子裝置 |
| TWI420781B (zh) * | 2010-12-06 | 2013-12-21 | Mh Solar Co Ltd | 一種可攜式太陽能充電裝置 |
| CN102646749A (zh) * | 2011-02-18 | 2012-08-22 | 美环光能股份有限公司 | 垂直多接面太阳能电池的制作方法 |
| CN102437208B (zh) * | 2011-12-08 | 2013-11-20 | 上海太阳能电池研究与发展中心 | 机械组装太阳能电池 |
| TWI506801B (zh) * | 2011-12-09 | 2015-11-01 | Hon Hai Prec Ind Co Ltd | 太陽能電池組 |
| CN103165742B (zh) * | 2011-12-16 | 2016-06-08 | 清华大学 | 太阳能电池的制备方法 |
| CN103165690B (zh) | 2011-12-16 | 2015-11-25 | 清华大学 | 太阳能电池 |
| CN103165719B (zh) | 2011-12-16 | 2016-04-13 | 清华大学 | 太阳能电池 |
| CN103178137B (zh) * | 2011-12-22 | 2016-04-13 | 清华大学 | 太阳能电池组 |
| RU2487437C1 (ru) * | 2012-02-02 | 2013-07-10 | Федеральное государственное унитарное предприятие "Всероссийский Электротехнический институт им. В.И. Ленина" (ФГУП ВЭИ) | Фотоэлектронный элемент |
| DE102012205258A1 (de) * | 2012-03-30 | 2013-10-02 | Evonik Industries Ag | Photoelektrochemische Zelle, System und Verfahren zur lichtgetriebenen Erzeugung von Wasserstoff und Sauerstoff mit einer photoelektrochemischen Zelle und Verfahren zur Herstellung der photoelektrochemischen Zelle |
| US20150340521A1 (en) * | 2012-12-20 | 2015-11-26 | The Trustees Of Boston College | Methods and Systems for Controlling Phonon-Scattering |
| TWI513017B (zh) * | 2013-06-28 | 2015-12-11 | Mh Gopower Company Ltd | 具鈍化層之太陽能電池及其製程方法 |
| TWI513018B (zh) * | 2013-06-28 | 2015-12-11 | Mh Gopower Company Ltd | 具抗反射層之太陽能電池及其製程方法 |
| US9786800B2 (en) * | 2013-10-15 | 2017-10-10 | Solarworld Americas Inc. | Solar cell contact structure |
| CN106328643A (zh) * | 2015-06-29 | 2017-01-11 | 美环能股份有限公司 | 能量转换装置与使用该能量转换装置的功率晶体管模块 |
| US10553736B2 (en) * | 2015-07-01 | 2020-02-04 | Mh Go Power Company Limited | Photovoltaic power converter receiver |
| CN105261659A (zh) * | 2015-11-12 | 2016-01-20 | 天津三安光电有限公司 | 太阳能电池及其制备方法 |
| US11431280B2 (en) * | 2019-08-06 | 2022-08-30 | Tesla, Inc. | System and method for improving color appearance of solar roofs |
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| US4332973A (en) * | 1974-11-08 | 1982-06-01 | Sater Bernard L | High intensity solar cell |
| US4516314A (en) * | 1974-11-08 | 1985-05-14 | Sater Bernard L | Method of making a high intensity solar cell |
| US4082570A (en) * | 1976-02-09 | 1978-04-04 | Semicon, Inc. | High intensity solar energy converter |
| US4193081A (en) * | 1978-03-24 | 1980-03-11 | Massachusetts Institute Of Technology | Means for effecting cooling within elements for a solar cell array |
| US4996577A (en) * | 1984-01-23 | 1991-02-26 | International Rectifier Corporation | Photovoltaic isolator and process of manufacture thereof |
| US4634641A (en) * | 1985-07-03 | 1987-01-06 | The United States Of America As Represented By The United States Department Of Energy | Superlattice photoelectrodes for photoelectrochemical cells |
| JP2784841B2 (ja) * | 1990-08-09 | 1998-08-06 | キヤノン株式会社 | 太陽電池用基板 |
| JPH0797653B2 (ja) * | 1991-10-01 | 1995-10-18 | 工業技術院長 | 光電変換素子 |
| US5261969A (en) * | 1992-04-14 | 1993-11-16 | The Boeing Company | Monolithic voltage-matched tandem photovoltaic cell and method for making same |
| US5266125A (en) * | 1992-05-12 | 1993-11-30 | Astropower, Inc. | Interconnected silicon film solar cell array |
| JP3152328B2 (ja) * | 1994-03-22 | 2001-04-03 | キヤノン株式会社 | 多結晶シリコンデバイス |
| JPH08125210A (ja) * | 1994-10-24 | 1996-05-17 | Jiyousuke Nakada | 受光素子及び受光素子アレイ並びにそれらを用いた電解装置 |
| JP2762993B2 (ja) * | 1996-11-19 | 1998-06-11 | 日本電気株式会社 | 発光装置及びその製造方法 |
| EP0982780B1 (en) * | 1998-01-23 | 2003-09-24 | Josuke Nakata | Photoelectrolytic device |
| JP2002170980A (ja) * | 2000-11-30 | 2002-06-14 | Rasa Ind Ltd | 水溶液の電気分解用光電池 |
| US6611085B1 (en) * | 2001-08-27 | 2003-08-26 | Sandia Corporation | Photonically engineered incandescent emitter |
| JP2003124481A (ja) * | 2001-10-11 | 2003-04-25 | Mitsubishi Heavy Ind Ltd | 太陽電池 |
| RU2210142C1 (ru) * | 2002-04-17 | 2003-08-10 | Общество с ограниченной ответственностью Научно-производственный центр завода "Красное знамя" | Способ изготовления солнечного элемента с n+-p-p+ структурой |
| CN1177375C (zh) * | 2003-01-14 | 2004-11-24 | 河北科技大学 | 一种太阳能转换多结极联光电池 |
| US7812249B2 (en) * | 2003-04-14 | 2010-10-12 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
| US7718888B2 (en) * | 2005-12-30 | 2010-05-18 | Sunpower Corporation | Solar cell having polymer heterojunction contacts |
| JP4976388B2 (ja) * | 2006-06-14 | 2012-07-18 | 京セミ株式会社 | ロッド形半導体デバイス |
| CN100463231C (zh) * | 2007-07-13 | 2009-02-18 | 南京大学 | 铟镓氮p-n结型多结太阳电池的结构的设置方法 |
-
2009
- 2009-08-12 CN CN201310219215.8A patent/CN103337546B/zh not_active Expired - Fee Related
- 2009-08-12 CN CN2009801392214A patent/CN102171840A/zh active Pending
- 2009-08-12 MX MX2011001738A patent/MX2011001738A/es active IP Right Grant
- 2009-08-12 JP JP2011523143A patent/JP2012500474A/ja active Pending
- 2009-08-12 CN CN2013102194702A patent/CN103337547A/zh active Pending
- 2009-08-12 WO PCT/US2009/053576 patent/WO2010019685A1/en active Application Filing
- 2009-08-12 BR BRPI0917838A patent/BRPI0917838A2/pt not_active IP Right Cessation
- 2009-08-12 EP EP09807234A patent/EP2327107A1/en not_active Withdrawn
- 2009-08-12 RU RU2011109164/28A patent/RU2472251C2/ru not_active IP Right Cessation
- 2009-08-12 CN CN201310219468.5A patent/CN103354247B/zh not_active Expired - Fee Related
- 2009-08-12 AU AU2009281960A patent/AU2009281960A1/en not_active Abandoned
- 2009-08-12 CA CA2733976A patent/CA2733976C/en not_active Expired - Fee Related
- 2009-08-12 CA CA2820184A patent/CA2820184A1/en not_active Abandoned
- 2009-08-14 TW TW098127486A patent/TWI535042B/zh not_active IP Right Cessation
-
2011
- 2011-02-13 IL IL211205A patent/IL211205A0/en unknown
-
2012
- 2012-10-02 RU RU2012141985/28A patent/RU2012141985A/ru not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| CN103354247A (zh) | 2013-10-16 |
| RU2011109164A (ru) | 2012-09-20 |
| WO2010019685A1 (en) | 2010-02-18 |
| RU2472251C2 (ru) | 2013-01-10 |
| TWI535042B (zh) | 2016-05-21 |
| MX2011001738A (es) | 2011-08-12 |
| JP2012500474A (ja) | 2012-01-05 |
| CN103354247B (zh) | 2016-10-05 |
| CN102171840A (zh) | 2011-08-31 |
| RU2012141985A (ru) | 2014-05-10 |
| CA2733976A1 (en) | 2010-02-18 |
| CA2820184A1 (en) | 2010-02-18 |
| BRPI0917838A2 (pt) | 2017-02-14 |
| WO2010019685A4 (en) | 2010-05-06 |
| CN103337546B (zh) | 2017-03-01 |
| CN103337547A (zh) | 2013-10-02 |
| IL211205A0 (en) | 2011-04-28 |
| EP2327107A1 (en) | 2011-06-01 |
| TW201013951A (en) | 2010-04-01 |
| AU2009281960A1 (en) | 2010-02-18 |
| CN103337546A (zh) | 2013-10-02 |
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| EEER | Examination request | ||
| MKLA | Lapsed |
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| MKLA | Lapsed |
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