WO2010059310A2 - Outil d'ablation au laser par l'intermédiaire de masques à motifs épars - Google Patents

Outil d'ablation au laser par l'intermédiaire de masques à motifs épars Download PDF

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Publication number
WO2010059310A2
WO2010059310A2 PCT/US2009/060402 US2009060402W WO2010059310A2 WO 2010059310 A2 WO2010059310 A2 WO 2010059310A2 US 2009060402 W US2009060402 W US 2009060402W WO 2010059310 A2 WO2010059310 A2 WO 2010059310A2
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WO
WIPO (PCT)
Prior art keywords
mask
apertures
substrate
complete pattern
pattern
Prior art date
Application number
PCT/US2009/060402
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English (en)
Other versions
WO2010059310A3 (fr
Inventor
Thomas R. Corrigan
Original Assignee
3M Innovative Properties Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Company filed Critical 3M Innovative Properties Company
Priority to JP2011537454A priority Critical patent/JP2012509194A/ja
Priority to EP09827940.9A priority patent/EP2359389A4/fr
Priority to KR1020117013922A priority patent/KR101716908B1/ko
Priority to CN200980146301.2A priority patent/CN102217036B/zh
Publication of WO2010059310A2 publication Critical patent/WO2010059310A2/fr
Publication of WO2010059310A3 publication Critical patent/WO2010059310A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Definitions

  • Excimer lasers have been used to ablate patterns into polymer sheets using imaging systems. Most commonly, these systems have been used to modify products, primarily to cut holes for ink jet nozzles or printed circuit boards. This modification is performed by overlaying a series of identical shapes with the imaging system. The mask of constant shapes and a polymer substrate can be held in one place while a number of pulses from the laser are focused on the top surface of the substrate. The number of pulses is directly related to the hole depth. The fluence (or energy density) of the laser beam is directly related to the cutting speed, or microns of depth cut per pulse (typically 0.1 - 1 micron for each pulse).
  • 3D structures can be created by ablating with an array of different discrete shapes. For instance, if a large hole is ablated into a substrate surface, and then smaller and smaller holes are subsequently ablated, a lens like shape can be made. Ablating with a sequence of different shaped openings in a single mask is known in the art. The concept of creating that mask by cutting a model (such as a spherical lens) into a series of cross sections at evenly distributed depths is also known.
  • a sparse patterned mask can be used in a laser ablation process to image a substrate.
  • the mask has one or more plurality of apertures for transmission of light and non-transmissive areas around the apertures.
  • the apertures individually form a portion of a complete pattern, and the non-transmissive areas exist on the mask in regions between the first apertures that correspond to non-imaged regions on the substrate that are subsequently imaged by second apertures on the same or a different mask to create the complete pattern.
  • a mask is a discrete region of apertures that can be imaged at a single time by the laser illumination system. More than one mask may exist on a single glass plate if the plate is much larger than the field of view of the illumination system. Changing from one mask to another may include moving the glass plate to bring another region into the laser illumination field of view.
  • a method for laser imaging a substrate uses a sparse patterned mask.
  • the method includes imaging the substrate through a first mask having apertures for transmission of light and non-transmissive areas around the apertures, and subsequently imaging the substrate through one or more second masks each having apertures for transmission of light and non-transmissive areas around the apertures.
  • the apertures in the first mask form a first portion of a complete pattern of features
  • the apertures in the one or more second masks form a second portion of the complete pattern of features.
  • the first mask and the one or more second masks together form the complete pattern of features when the first mask and the one or more second masks are individually imaged.
  • Another method for laser imaging a substrate also uses a sparse patterned mask.
  • the method includes imaging the substrate such that a region on the substrate is imaged by the first apertures in the mask for transmission of light and subsequently imaging the region of the substrate through one or more second apertures in the mask.
  • Non-transmissive areas surround the first apertures and the one or more second apertures.
  • the image of the first apertures in the mask in combination with the one or more images of second apertures form a complete pattern of features.
  • the features may be created from only the first apertures, only the second apertures, or a combination of first and second apertures.
  • a microreplicated article consistent with the present invention, has two or more repeating arrays of discrete features.
  • Each of the arrays of features forms a constituent pattern as part of a complete pattern.
  • the arrays of features are interlaced to create the complete pattern of the features that repeats over a distance greater than a repeat distance of any of the constituent patterns.
  • FIG. 1 is a diagram of a system for performing laser ablation on a flat substrate
  • FIG. 2 is a diagram of a system for performing laser ablation on a cylindrical substrate
  • FIGS. 3a-3c are diagrams illustrating the creation of three interlaced sparse patterns on a cylindrical tool
  • FIG. 4 is a diagram of a first type of repeating pattern
  • FIG. 5 is a diagram of a second type of repeating pattern
  • FIG. 6 is a diagram of a portion of a complete pattern having hexagonal structures
  • FIG. 7 is a diagram of a portion of a complete pattern having ring-like structures
  • FIG. 8 is a diagram illustrating a sparse mask that could produce the pattern in FIG. 6;
  • FIG. 9 is a diagram illustrating a sparse mask that could produce the pattern in FIG. 7;
  • FIG. 10 is a diagram showing a portion of a one-third sparse hexagonal packed pattern
  • FIG. 11 is a diagram showing a portion of a second one -third sparse hexagonally packed pattern interlaced with the pattern of FIG. 10;
  • FIG. 12 is a diagram showing a portion of a third one-third sparse hexagonally packed pattern interlaced with the two patterns of FIG. 11;
  • FIG. 13 is a diagram illustrating a sparse mask that could produce the sparse pattern of FIG. 10.
  • FIGS. 14 and 14a are diagrams illustrating a cylindrical substrate that has been threadcut on a portion of its surface with a sparse pattern. A detailed view of the pattern is also shown.
  • Embodiments of the present invention relate to techniques for designing and using a mask based imaging system to produce patterns via laser ablation or lithography based systems.
  • the techniques involve dividing a pattern on a mask to make that pattern sparse.
  • a regular pattern to be used for imaging can be divided into smaller subregions with empty space added between the subregions.
  • the original pattern is then reassembled during the raster of the imaging process.
  • the complete pattern is obtained by imaging individual masks with sparse patterns and interlacing those patterns to create a new pattern.
  • a number of masks with sparse patterns that have different repeating distances may be used.
  • repeating distances are ideally prime numbers such that the overall pattern repeats over a distance much larger than the individual mask image size. This technique can be used, for example, to make a pattern that is difficult to identify and less likely to produce moire in combination with another pattern or itself.
  • the empty space in the subpatterns is beneficial during an ablation process.
  • the empty space in the masks allows the laser ablation plume (an expanding wave of plasma that "explodes” from the surface anywhere it is hit with radiation) to expand more freely.
  • the empty space also reduces two significant problems routinely encountered in laser ablation: macro scale defects (lines) corresponding to the step over distance on a laser ablation tool are greatly reduced; and the nature of the debris that is left on the surface of the tool is changed such that it can be more easily removed.
  • FIG. 1 is a diagram of a system 10 for performing laser ablation on a substantially flat substrate.
  • System 10 includes a laser 12 providing a laser beam 14, optics 16, a mask 18, imaging optics 20, and a substrate 22 on a stage 24.
  • Mask 18 patterns laser beam 14 and imaging optics 20 focus the patterned beam onto substrate 22 in order to ablate material on the substrate.
  • Stage 24 is typically implemented with an x-y-z stage that provides for movement of the substrate, via stage 24, in mutually orthogonal x- and y- directions that are both also orthogonal to laser beam 14, and a z-direction parallel to laser beam 14. Therefore, movement in the x- and y-directions permits ablation across substrate 22, and movement in the z-direction can assist in focusing the image of the mask onto a surface of substrate 22.
  • FIG. 2 is a diagram of a system 26 for performing laser ablation on a substantially cylindrical substrate.
  • System 26 includes a laser 28 providing a laser beam 30, optics 32, a mask 34, imaging optics 36, and a cylindrical substrate 40.
  • Mask 34 patterns laser beam 30 and imaging optics 36 focus the patterned beam onto substrate 40 in order to ablate material on the substrate.
  • the substrate 40 is mounted for rotational movement in order to ablate material around substrate 40 and is also mounted for movement in a direction parallel to the axis of substrate 40 in order to ablate material across substrate 40.
  • the substrate can additionally be moved parallel and orthogonal to the beam 30 to keep the image of the mask focused on the substrate surface.
  • the masks 18 and 34 have apertures to allow transmission of laser light and non-transmissive areas around the apertures to substantially block the laser light.
  • a mask includes a metal layer on glass with a photoresist in order to make the apertures (pattern) via lithography.
  • the mask may have varying sizes and shapes of apertures.
  • a mask can have round apertures of varying diameters, and the same position on the substrate can be laser ablated with the varying diameter apertures to cut a hemispherical structure into the substrate.
  • Substrates 22 and 40 can be implemented with any material capable of being machined using laser ablation, typically a polymeric material. In the case of cylindrical substrate 40, it can be implemented with a polymeric material coated over a metal roll. Examples of substrate materials are described in U.S. Patent Applications Publication Nos. 2007/0235902A1 and 2007/023154 IAl, both of which are incorporated herein by reference as if fully set forth.
  • the substrates can be used as a tool to create other microreplicated articles, such as optical films.
  • other microreplicated articles such as optical films. Examples of structures within such optical films and methods for creating the films are provided in U.S. Patent Application of Kenneth Epstein et al., entitled “Curved Sided Cone Structures for Controlling Gain and Viewing Angle in an Optical Film,” and filed on even date herewith, which is incorporated herein by reference as if fully set forth.
  • the microreplicated articles can have features created by a laser imaging process using sparse masks as described below.
  • feature means a discrete structure within a cell on a substrate, including both a shape and position of the structure within the cell.
  • the discrete structures are typically separated from one another; however, discrete structures also includes structures in contact at the interface of two or more cells.
  • Laser machining of flat and cylindrical substrates is more fully described in U.S. Patent No. 6,285,001 and U.S. Patent Application Serial No. 11/941206, entitled “Seamless Laser Ablated Roll Tooling," and filed November 16, 2007, both of which are incorporated herein by reference as if fully set forth.
  • a mask to produce a repeating pattern on a laser ablation system 10 can be made sparse, using a sparse mask, such that it has empty spaces in one-half, two- thirds, or three-fourths of the pattern, or in other ratios. Then one, two, or three or more passes of that mask image or others across the substrate are required respectively to fill in the gaps. If the distance between repeating structures on the one, two, or three (or more) passes are significantly different (preferably prime numbers) then the distance between true repeats of the structure can be many times larger than the mask image size, exceeding several centimeters in practice.
  • the structure can have randomly shaped or arranged features within the cells of the repeating structure. The distance between repeats on a single mask is generally less than 5 millimeters across, more commonly 1 mm or less.
  • Table 1 illustrates a non-sparse laser ablation mask that has a single row of a repeating pattern (feature A), where feature A consists of one or more sub features, or distinct regions, that block or transmit light on the mask.
  • This pattern can then used during rastering, as shown in FIG. 4, with steps of 1 unit (50), 2 units (52), or 4 units (54), overlaying respectively 4, 2, or 1 images of feature A per pass.
  • Rastering involves imaging the mask during or after moving the substrate, as described in U.S. Patent No. 6,285,001. Two possible sparse versions of the same pattern are shown in Table 2.
  • any type of sparse pattern can be used if it is rastered at 1 basic unit step size.
  • N odd number of repeats with equal sized empty spaces between them (creating a total mask width of 2N)
  • the pattern can be rastered in steps of N units, as shown with the 3 unit step in FIG. 5 (60). If a non-uniform distribution of features is desired, then these constraints can be reduced.
  • any type of pattern can be divided to become sparse.
  • One type includes dense patterns; or applications that require the ablation of material over almost the entire surface of the substrate. These applications require masks that transmit most of the light on at least a portion of the mask. For example, a pattern of continuous grooves would require the removal of most of the top surface where the tops of the grooves are just starting to form. Discrete shapes that touch each other also require a large percentage of material removal from at least part of the mask image. These dense patterns can be difficult to laser ablate since little area is left for the ablated debris to escape from the substrate, often resulting in macro-scale defects and tenacious debris. In addition, dense patterns create more auditory noise during ablation, and they also causes more wear on the imaging optics.
  • a second type of pattern that benefits from sparseness is a confined pattern.
  • Confined patterns have a non-imaged region completely surrounded by an imaged area. Experience has shown that these confined regions can restrict the ablation plume. When a pattern has an "escape path" for the ablation plume they perform much better in terms of debris tenacity and macro-scale defects. To provide for such an "escape path," the pattern is made sparse such that there are no non-ablated regions that are completely enclosed by ablated regions.
  • Confined patterns can be continuous, such as the generic hexagonal pattern 62 with a continuous array of hexagonal features 64 shown in FIG. 6. Confined patterns can also be discrete structures such as pattern 66 having an array of ring-like shapes 68, as shown in FIG. 7.
  • Both of these patterns 62 and 66 can be made with sparse masks to provide an "escape path" for the ablation plume, as shown in FIGS. 8 and 9.
  • pattern 62 can be made from a sparse mask 70 that has apertures 72 that individually form only a portion of the hexagonal pattern and together with other copies form the continuous hexagonal pattern of features.
  • Pattern 62 is an example of a constituent pattern as part of the complete hexagonal pattern of features.
  • pattern 66 can be made from a sparse mask 73 by using apertures 74 and 76 that individually form only portions of the ring-like pattern and together form the complete pattern of ring-like features.
  • Pattern 66 is an example of a constituent pattern as part of the complete square pattern of features.
  • the sparse patterned masks are then imaged with a laser ablation process onto different regions of a substrate such that the complete pattern is ablated on the substrate using a step and repeat, or rastering, process.
  • Multiple sparse masks can be interlaced to create a more complex pattern than a single mask can achieve. For example, if a hexagonal array of shapes (possibly to make lenses) is desired, then three one-third sparse masks can be employed.
  • a repeating pattern 78 can be produced as shown in FIG. 10. This pattern 78 shows four different features (A1-A4) that repeat in a 2x1 pattern. The features are created by the superposition of multiple cross sections of the desired features. For example, region 92 in FIG 13 contains one aperture for the largest cross section of each of four features, Al (94), A2 (96), A3 (98) and A4 (100).
  • each of these axisymmetric features i.e., lenses
  • their position within their hexagonal cell are slightly different in the mask of FIG 13.
  • a single pass with mask 90 would superimpose the nine regions shown in FIG 13 to produce the array of repeating features shown in pattern 78.
  • a pass with a mask B would result in the combined pattern 80 shown in FIG. 11.
  • Mask B is designed to produce a 3x2 repeating pattern of features (Bl -B 12). Again, each of the twelve features (Bl -B 12) can be slightly different in size and position relative to the hexagonal array.
  • a final pass with a mask C would produce the pattern 82 shown in FIG. 12.
  • Mask C is designed to produce features that repeat in a 4x3 pattern (C1-C24). All twenty- four of the features (C1-C24) can have a random position within the hexagonal cell and a random size.
  • the combined pattern 82 When the combined pattern 82 is complete, it will appear to be random, but will have a repeat on the order of the hexagon cell size multiplied by the least common factor of the three repeats. In this case that would require only 12 steps in one direction and 6 steps in the other direction. If the nominal feature pitch (or hexagonal cell spacing) was 100 microns, then the pattern would repeat about every 2.08 mm in one direction and 0.60 mm in the other.
  • Another scenario for a hexagonal pattern includes repeating lenses that are about 10 microns in diameter. If three masks were again made, but using prime numbers of repeats, such as 37x17, 19x41, and 43x23 repeats, then the number of repeats between a full repeat of the pattern would be 30,229x16,031. This corresponds to about 524 mm (20.6 inches) in a horizontal direction and 481 mm (18.9 inches) in a vertical direction between repeats.
  • each of the patterns is applied in discrete rows, as illustrated in FIGS. 3a-3c.
  • FIG. 3a illustrates a first pattern 44 on a cylindrical substrate 42.
  • FIG. 3b illustrates a second pattern 46 having a larger repeat distance in both the circumferential direction (43) and the axial direction (45) than pattern 44.
  • FIG. 3c illustrates a pattern 48 representing pattern 44 interlaced with pattern 46.
  • the patterns can interlace similar to the planar application of multiple patterns. The only additional constraint is that the total distance along the circumference ( ⁇ direction, 43) must be a multiple of the step distance in that direction for of all of the individual patterns. There is no constraint in the z-direction (45) for creating the interlaced pattern if the edges are discarded in production.
  • the sparse interlaced pattern can be created using, for example, system 26 to machine the pattern into a substrate using laser ablation.
  • multiple sparse patterns can be interlaced onto a cylindrical surface by thread cutting.
  • Thread cutting can involve imaging the mask in steps along a helical path on the surface of a cylindrical substrate as shown in FIGS. 14 and 14a.
  • the design of the mask and size of the steps and the pitch of the helix can be adjusted to create a pattern on the substrate surface that is an array of discrete or continuous features. Those features can be created in one or more passes of a properly designed sparse mask.
  • a more complex pattern can also be created on the cylindrical substrate by the interlacing of multiple sparse patterns from properly designed sparse masks.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)

Abstract

L'invention divulgue un masque à motifs épars à utiliser dans un procédé d'ablation au laser pour imager un substrat. Le masque comporte une pluralité d'ouvertures pour la transmission de lumière, et des régions de non transmission autour des ouvertures. Les ouvertures forment individuellement une partie d'un motif complet, et une pluralité d'ouvertures de un ou plusieurs masques forment ensemble le motif complet lorsque les masques sont imagés. Le fait de prévoir un masque à ouvertures éparses procure un chemin pour l'évacuation des débris en provenance du substrat pendant le procédé d'ablation au laser. De multiples motifs répétés épars entrelacés peuvent créer un motif plus complexe avec des distances de répétition plus grandes que celles des motifs individuels.
PCT/US2009/060402 2008-11-21 2009-10-13 Outil d'ablation au laser par l'intermédiaire de masques à motifs épars WO2010059310A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011537454A JP2012509194A (ja) 2008-11-21 2009-10-13 まばらなパターンを有するマスクを介したレーザーアブレーションツール
EP09827940.9A EP2359389A4 (fr) 2008-11-21 2009-10-13 Outil d'ablation au laser par l'intermédiaire de masques à motifs épars
KR1020117013922A KR101716908B1 (ko) 2008-11-21 2009-10-13 성긴 패턴화된 마스크에 의한 레이저 융삭 가공
CN200980146301.2A CN102217036B (zh) 2008-11-21 2009-10-13 用具有稀疏图案的掩模进行激光烧蚀加工

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/275,669 2008-11-21
US12/275,669 US20100129617A1 (en) 2008-11-21 2008-11-21 Laser ablation tooling via sparse patterned masks

Publications (2)

Publication Number Publication Date
WO2010059310A2 true WO2010059310A2 (fr) 2010-05-27
WO2010059310A3 WO2010059310A3 (fr) 2010-07-15

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US (2) US20100129617A1 (fr)
EP (1) EP2359389A4 (fr)
JP (2) JP2012509194A (fr)
KR (1) KR101716908B1 (fr)
CN (1) CN102217036B (fr)
WO (1) WO2010059310A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015231638A (ja) * 2008-11-21 2015-12-24 スリーエム イノベイティブ プロパティズ カンパニー まばらなパターンを有するマスクを介したレーザーアブレーションツール

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110070398A1 (en) 2009-09-18 2011-03-24 3M Innovative Properties Company Laser ablation tooling via distributed patterned masks
KR101135537B1 (ko) * 2010-07-16 2012-04-13 삼성모바일디스플레이주식회사 레이저 조사 장치
CN102789125B (zh) * 2012-07-27 2013-11-13 京东方科技集团股份有限公司 隔垫物制作方法
US9142778B2 (en) * 2013-11-15 2015-09-22 Universal Display Corporation High vacuum OLED deposition source and system
WO2016124712A2 (fr) * 2015-02-05 2016-08-11 Mycronic AB Procédé récurrent pour le transfert vers l'avant induit par laser et pour le rendement élevé et le recyclage d'un matériau donneur grâce à la réutilisation d'une pluralité de plaques de substrats cibles ou grâce au transfert vers l'avant d'un motif de points donneurs discrets
US20190151994A1 (en) * 2016-07-08 2019-05-23 Huawei Technologies Co., Ltd. Method and Apparatus for Performing Light Processing on Surface of Housing
EP3580013A4 (fr) * 2017-02-09 2020-12-16 US Synthetic Corporation Comprimés de diamant polycristallin usinés par une source d'énergie et procédés associés
WO2018212365A1 (fr) * 2017-05-15 2018-11-22 전자부품연구원 Procédé de production de graphène
CN108907482B (zh) * 2018-09-26 2024-01-02 无锡先导智能装备股份有限公司 激光跳转型极耳切割成型装置的使用方法及激光模切机
US11353995B2 (en) * 2019-04-15 2022-06-07 Elo Touch Solutions, Inc. Laser-ablated gradient region of a touchscreen
FR3098137B1 (fr) * 2019-07-02 2022-07-15 Aptar France Sas Procédé de fabrication d’une paroi de distribution
KR20210142049A (ko) 2020-05-15 2021-11-24 삼성디스플레이 주식회사 표시 장치, 마스크 조립체, 표시 장치의 제조장치 및 표시 장치의 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6285001B1 (en) * 1995-04-26 2001-09-04 3M Innovative Properties Company Method and apparatus for step and repeat exposures
KR100631013B1 (ko) * 2003-12-29 2006-10-04 엘지.필립스 엘시디 주식회사 주기성을 가진 패턴이 형성된 레이저 마스크 및 이를이용한 결정화방법
US20070000884A1 (en) * 2005-06-30 2007-01-04 Salama Islam A Pattern ablation using laser patterning

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2539491Y2 (ja) * 1991-10-09 1997-06-25 惠和商工株式会社 光拡散シート材
JPH0783950B2 (ja) * 1989-10-11 1995-09-13 三菱電機株式会社 光処理装置
US5223693A (en) * 1990-04-28 1993-06-29 Mitsubishi Denki Kabushiki Kaisha Optical machining apparatus
US5254390B1 (en) * 1990-11-15 1999-05-18 Minnesota Mining & Mfg Plano-convex base sheet for retroreflective articles
JP3211525B2 (ja) * 1993-04-22 2001-09-25 オムロン株式会社 薄材メッシュ、その製造方法及びその製造装置
US5828488A (en) * 1993-12-21 1998-10-27 Minnesota Mining And Manufacturing Co. Reflective polarizer display
US5607764A (en) * 1994-10-27 1997-03-04 Fuji Photo Film Co., Ltd. Optical diffuser
DE69626124T2 (de) * 1995-06-26 2003-10-09 Minnesota Mining & Mfg Diffus reflektierende mehrschicht-polarisatoren und spiegel
BR9609314A (pt) * 1995-06-26 1999-07-06 Minnesota Mining & Mfg Película de multicamadas
US6052321A (en) * 1997-04-16 2000-04-18 Micron Technology, Inc. Circuit and method for performing test on memory array cells using external sense amplifier reference current
JP3373106B2 (ja) * 1996-03-27 2003-02-04 株式会社きもと 光学フィルム
US5919551A (en) * 1996-04-12 1999-07-06 3M Innovative Properties Company Variable pitch structured optical film
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US6280063B1 (en) * 1997-05-09 2001-08-28 3M Innovative Properties Company Brightness enhancement article
US6808658B2 (en) * 1998-01-13 2004-10-26 3M Innovative Properties Company Method for making texture multilayer optical films
US6222157B1 (en) * 1998-04-17 2001-04-24 L.A. Batchelder And Sons Consulting, Inc. Seamless holographic transfer using laser generated optical effect patterns
US6086773A (en) * 1998-05-22 2000-07-11 Bmc Industries, Inc. Method and apparatus for etching-manufacture of cylindrical elements
US6590635B2 (en) * 1998-06-19 2003-07-08 Creo Inc. High resolution optical stepper
JP2000021696A (ja) * 1998-07-03 2000-01-21 Komatsu Ltd レーザマーキング装置及びそれを用いたレーザマーキング方法
JP3515401B2 (ja) * 1998-12-18 2004-04-05 大日本印刷株式会社 防眩フィルム、偏光板及び透過型表示装置
US6752505B2 (en) * 1999-02-23 2004-06-22 Solid State Opto Limited Light redirecting films and film systems
US6076238A (en) * 1999-04-13 2000-06-20 3M Innovative Properties Company Mechanical fastener
US6972813B1 (en) * 1999-06-09 2005-12-06 3M Innovative Properties Company Optical laminated bodies, lighting equipment and area luminescence equipment
EP1094340B1 (fr) * 1999-09-29 2007-07-18 FUJIFILM Corporation Film antiéblouissant et antiréfléchissant, polarisateur et dispositif d'affichage d'images
US6280466B1 (en) * 1999-12-03 2001-08-28 Teramed Inc. Endovascular graft system
JP4408166B2 (ja) * 2000-04-27 2010-02-03 大日本印刷株式会社 指向性拡散フィルム及びその製造方法、面光源装置及び液晶表示装置
JP4573946B2 (ja) * 2000-05-16 2010-11-04 株式会社きもと 光拡散性シート
JP4652527B2 (ja) * 2000-05-16 2011-03-16 株式会社きもと 光拡散性シート
FR2819350B1 (fr) * 2001-01-05 2003-04-11 Valeo Equip Electr Moteur Machine tournante perfectionnee pour vehicules automobiles
TW521310B (en) * 2001-02-08 2003-02-21 Toshiba Corp Laser processing method and apparatus
KR100765304B1 (ko) * 2001-02-21 2007-10-09 삼성전자주식회사 백라이트 어셈블리 및 이를 갖는 액정 표시 장치
KR200248620Y1 (ko) * 2001-06-09 2001-10-31 김경환 목지압 넥타이
JP2004063736A (ja) * 2002-07-29 2004-02-26 Riipuru:Kk ステンシルマスク及び該ステンシルマスクを使用した転写方法
JP2004071766A (ja) * 2002-08-05 2004-03-04 Sony Corp アライメントマークを有する相補分割マスク、該相補分割マスクのアライメントマークの形成方法、該相補分割マスクを使用して製造される半導体デバイス、及びその製造方法
TW582552U (en) * 2003-03-24 2004-04-01 Shih-Chieh Tang Brightness unit structure for a brightness enhancement film
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7699503B2 (en) * 2004-03-03 2010-04-20 Kimoto Co., Ltd. Light control film and backlight unit using the same
KR100662782B1 (ko) * 2004-04-14 2007-01-02 엘지.필립스 엘시디 주식회사 레이저 마스크 및 이를 이용한 결정화방법
TWI310471B (en) * 2004-05-25 2009-06-01 Au Optronics Corp Backlight module equipped with brightness convergence function
JP2006106597A (ja) * 2004-10-08 2006-04-20 Canon Inc 三次元光学素子形状形成マスク
US7906270B2 (en) * 2005-03-23 2011-03-15 Asml Netherlands B.V. Reduced pitch multiple exposure process
TWI334962B (en) * 2005-04-12 2010-12-21 Asml Masktools Bv A method, program product and apparatus for performing double exposure lithography
US20060250707A1 (en) * 2005-05-05 2006-11-09 3M Innovative Properties Company Optical film having a surface with rounded pyramidal structures
WO2007029028A1 (fr) * 2005-09-06 2007-03-15 Plastic Logic Limited Ablation par laser de composants électroniques
US20070024994A1 (en) * 2005-07-29 2007-02-01 3M Innovative Properties Company Structured optical film with interspersed pyramidal structures
US7350442B2 (en) * 2005-11-15 2008-04-01 3M Innovative Properties Company Cutting tool having variable movement in a z-direction laterally along a work piece for making microstructures
US7290471B2 (en) * 2005-11-15 2007-11-06 3M Innovative Properties Company Cutting tool having variable rotation about a y-direction transversely across a work piece for making microstructures
US7350441B2 (en) * 2005-11-15 2008-04-01 3M Innovative Properties Company Cutting tool having variable movement at two simultaneously independent speeds in an x-direction into a work piece for making microstructures
US7293487B2 (en) * 2005-11-15 2007-11-13 3M Innovative Properties Company Cutting tool having variable and independent movement in an x-direction and a z-direction into and laterally along a work piece for making microstructures
US20070235902A1 (en) * 2006-03-31 2007-10-11 3M Innovative Properties Company Microstructured tool and method of making same using laser ablation
US20070231541A1 (en) * 2006-03-31 2007-10-04 3M Innovative Properties Company Microstructured tool and method of making same using laser ablation
JP2008012543A (ja) * 2006-07-03 2008-01-24 Fuji Xerox Co Ltd レーザー加工装置、レーザー加工方法及び液滴吐出ヘッドの製造方法
US7604381B2 (en) * 2007-04-16 2009-10-20 3M Innovative Properties Company Optical article and method of making
US20080257871A1 (en) * 2007-04-20 2008-10-23 Leiser Judson M Ablation device
GB0804955D0 (en) * 2008-03-18 2008-04-16 Rumsby Philip T Method and apparatus for laser processing the surface of a drum
US20100129617A1 (en) * 2008-11-21 2010-05-27 Corrigan Thomas R Laser ablation tooling via sparse patterned masks

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6285001B1 (en) * 1995-04-26 2001-09-04 3M Innovative Properties Company Method and apparatus for step and repeat exposures
KR100631013B1 (ko) * 2003-12-29 2006-10-04 엘지.필립스 엘시디 주식회사 주기성을 가진 패턴이 형성된 레이저 마스크 및 이를이용한 결정화방법
US20070000884A1 (en) * 2005-06-30 2007-01-04 Salama Islam A Pattern ablation using laser patterning

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2359389A2 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015231638A (ja) * 2008-11-21 2015-12-24 スリーエム イノベイティブ プロパティズ カンパニー まばらなパターンを有するマスクを介したレーザーアブレーションツール

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US20170285457A1 (en) 2017-10-05
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KR20110095365A (ko) 2011-08-24
EP2359389A2 (fr) 2011-08-24
JP2012509194A (ja) 2012-04-19
KR101716908B1 (ko) 2017-03-17
EP2359389A4 (fr) 2014-08-20
CN102217036A (zh) 2011-10-12
JP6117881B2 (ja) 2017-04-19
CN102217036B (zh) 2014-04-23

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