WO2010058548A1 - Procédé de fabrication de support d'enregistrement magnétique et dispositif d'enregistrement/reproduction magnétique - Google Patents
Procédé de fabrication de support d'enregistrement magnétique et dispositif d'enregistrement/reproduction magnétique Download PDFInfo
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- WO2010058548A1 WO2010058548A1 PCT/JP2009/006137 JP2009006137W WO2010058548A1 WO 2010058548 A1 WO2010058548 A1 WO 2010058548A1 JP 2009006137 W JP2009006137 W JP 2009006137W WO 2010058548 A1 WO2010058548 A1 WO 2010058548A1
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/855—Coating only part of a support with a magnetic layer
Definitions
- the present invention relates to a method of manufacturing a magnetic recording medium used in a magnetic recording / reproducing apparatus such as a hard disk device, and a magnetic recording / reproducing apparatus.
- a magnetic recording medium As an example of a discrete track medium, a magnetic recording medium is known in which a magnetic recording medium is formed on a non-magnetic substrate having a concavo-convex pattern formed on a surface, and a magnetic recording track and a servo signal pattern that are physically separated are formed. (For example, refer to Patent Document 1).
- a ferromagnetic layer is formed on a surface of a substrate having a plurality of irregularities on the surface via a soft magnetic layer, and a protective film is formed on the surface.
- a magnetic recording area physically separated from the periphery is formed in the convex area. According to this magnetic recording medium, the occurrence of a domain wall in the soft magnetic layer can be suppressed, so that the influence of thermal fluctuation is difficult to occur, and there is no interference between adjacent signals, so that a high-density magnetic recording medium with less noise can be formed. ing.
- the discrete track method includes a method in which a track is formed after a magnetic recording medium consisting of several thin films is formed, and a magnetic pattern is formed after a concave / convex pattern is formed directly on the substrate surface in advance or on a thin film layer for track formation.
- a method for forming a thin film of a recording medium see, for example, Patent Document 2 and Patent Document 3).
- the magnetic track region of the discrete track medium is formed by injecting ions such as nitrogen and oxygen into a previously formed magnetic layer or by irradiating a laser to change the magnetic characteristics of the portion.
- a method is disclosed (see Patent Documents 4 to 6).
- the method of forming a magnetic recording pattern can be broadly classified as follows: (1) Reaction using oxygen or halogen A method of forming a magnetic recording pattern by modifying the magnetic properties of a magnetic film by exposing reactive plasma or reactive ions to a part of the magnetic layer, and (2) magnetically processing a part of the magnetic layer by ion milling. There is a method of smoothing the surface by forming a recording pattern and filling a processed portion with a nonmagnetic material.
- the manufacturing method of (1) has an advantage that it is easy to obtain a clean and smooth surface with less dust generation because there is no need to physically process the magnetic layer, but the surface of the magnetic layer is oxidized or halogenated. There are drawbacks. Then, starting from this oxidized or halogenated site, there is a problem that corrosion of the magnetic recording medium (migration of magnetic particles such as cobalt contained in the magnetic layer) occurs.
- the manufacturing method (2) there is a problem that dust is generated and the surface of the magnetic recording medium is contaminated because the magnetic layer is physically processed. In addition, there is a problem that dust during processing adheres to the surface, which causes the surface smoothness of the magnetic recording medium to deteriorate. Furthermore, there is a problem that the manufacturing process is complicated because it is necessary to fill the processed portion of the magnetic layer with a nonmagnetic material.
- the present invention has been made in view of such circumstances, and its purpose is not to oxidize or halogenate the surface of the magnetic layer, and the surface is not contaminated by dust, so that the manufacturing process is not complicated. It is an object of the present invention to provide a method for manufacturing a magnetic recording medium on which magnetically separated magnetic recording patterns are formed.
- the present invention provides the following means.
- a method of manufacturing a magnetic recording medium having a magnetically separated magnetic recording pattern A step of forming at least a magnetic layer on a nonmagnetic substrate, a step of forming a mask layer for forming a magnetic recording pattern on the magnetic layer, and an ion beam on a portion of the magnetic layer not covered by the mask layer. Irradiating and removing the upper layer portion of the magnetic layer at the part, and modifying the magnetic properties of the lower layer portion and removing the mask layer in this order Production method.
- a magnetic recording medium comprising: a magnetic recording medium obtained by the manufacturing method according to any one of (1) to (4); and a magnetic head for recording and reproducing information on the magnetic recording medium. Recording / playback device.
- a step of irradiating a portion of the magnetic layer not covered with the mask layer with an ion beam to remove the upper layer portion of the portion and to modify the magnetic properties of the lower layer portion is employed.
- ions mixed with nitrogen and hydrogen or ions mixed with nitrogen and neon are used as the ion beam, removing the upper layer portion of the magnetic layer and modifying the magnetic properties of the lower layer portion are performed. It can be carried out simultaneously and can be performed with high efficiency.
- the ion beam does not contain halogen, no halide is generated, thereby preventing the halide from being corroded by being in contact with the atmosphere.
- the amount of processing is small. Even if a protective film is formed, a smooth magnetic recording medium can be obtained. Thereby, a magnetic recording medium can be manufactured without increasing a manufacturing process.
- FIG. 1 is a cross-sectional process diagram illustrating a method of manufacturing a magnetic recording medium according to the present invention.
- FIG. 2 is a schematic configuration diagram showing an example of a magnetic recording / reproducing apparatus to which a magnetic recording medium manufactured by the manufacturing method of the present invention is applied.
- FIG. 3 is a graph showing the relationship between etching depth and coercive force (Hc) or saturation magnetization (Ms).
- FIG. 4 is a graph showing the relationship between etching depth and coercive force (Hc) or saturation magnetization (Ms).
- FIG. 5 is a graph showing the relationship between etching depth and coercive force (Hc) or saturation magnetization (Ms).
- the magnetic recording medium of the present embodiment has a structure in which a soft magnetic layer, an intermediate layer, a magnetic layer with a magnetic pattern formed thereon, and a protective film are laminated on the surface of a nonmagnetic substrate, and a lubricating film is formed on the surface. Is formed.
- a lubricating film is formed on the surface.
- other than the nonmagnetic substrate and the magnetic layer may be provided as appropriate.
- the method of manufacturing a magnetic recording medium includes a step A for forming a magnetic layer 2 on a nonmagnetic substrate 1, a step B for forming a mask layer 3 on the magnetic layer 2, Step C for forming the resist layer 4 on the mask layer 3, Step D for transferring the negative pattern of the magnetic recording pattern to the resist layer 4 using the stamp 5, and making the negative pattern of the magnetic recording pattern by the mask layer 3
- a process F for modifying the magnetic properties of the lower layer 8 a process G for removing the resist layer 4 and the mask layer 3 by dry etching, and a process H for covering the surface of the magnetic layer 2 with the protective film 9 in this order. Have. Hereinafter, these steps will be described in detail.
- the magnetic layer 2 is formed on the nonmagnetic substrate 1 (step A).
- a sputtering method is used as a method of forming the magnetic layer 2, but an appropriate method may be used.
- the nonmagnetic substrate 1 used in the present embodiment include an Al alloy substrate such as an Al—Mg alloy mainly composed of Al, ordinary soda glass, aluminosilicate glass, crystallized glass, silicon, titanium, Any non-magnetic substrate such as a substrate made of ceramics or various resins can be used. Among them, it is preferable to use a glass substrate such as an Al alloy substrate or crystallized glass, or a silicon substrate.
- the average surface roughness (Ra) of these substrates is preferably 1 nm or less, more preferably 0.5 nm or less, and most preferably 0.1 nm or less.
- the magnetic layer 2 formed on the nonmagnetic substrate 1 in this embodiment may be an in-plane magnetic layer or a perpendicular magnetic layer, but a perpendicular magnetic layer is preferable in order to achieve a higher recording density.
- These magnetic layers 2 are preferably formed from an alloy mainly composed of Co.
- the magnetic layer 2 for the in-plane magnetic recording medium for example, a magnetic layer made of a ferromagnetic CoCrPtTa layer can be used.
- the magnetic layer 2 can have a laminated structure together with a nonmagnetic CrMo underlayer provided on the substrate.
- the magnetic layer 2 for a perpendicular magnetic recording medium for example, the magnetic layer can be used consisting of 60Co-15Cr-15Pt alloy or 70Co-5Cr-15Pt-10SiO 2 alloy.
- the magnetic layer 2 is made of a soft magnetic FeCo alloy (FeCoB, FeCoSiB, FeCoZr, FeCoZrB, FeCoZrBCu, etc.), a FeTa alloy (FeTaN, FeTaC, etc.), a Co alloy (CoTaZr, CoZrNB, CoB, etc.) provided on the substrate.
- a laminated structure can be formed together with a backing layer, an orientation control film such as Pt, Pd, NiCr, or NiFeCr, and an intermediate film such as Ru, if necessary.
- the lower limit of the thickness of the magnetic layer 2 is preferably 3 nm, more preferably 5 nm, the upper limit is preferably 20 nm, and more preferably 15 nm.
- the magnetic layer 2 may be formed so as to obtain sufficient head input / output according to the type of magnetic alloy used and the laminated structure.
- the film thickness of the magnetic layer 2 needs to be more than a certain thickness in order to obtain a certain level of output during reproduction, while various parameters representing recording / reproduction characteristics deteriorate as the output increases. Therefore, it is necessary to set an optimum film thickness.
- the mask layer 3 formed on the magnetic layer 2 includes C, Ta, W, Ta nitride, W nitride, Si, SiO 2 , Ta 2 O 5 , Re, Mo, Ti, V, Nb, Sn, and Ga.
- Ge, As, and Ni are preferably used to form a material containing at least one selected from the group consisting of.
- As, Ge, Sn, and Ga are preferably used, Ni, Ti, V, and Nb are more preferably used, and C, Mo, Ta, and W are most preferably used.
- the masking property of the mask layer 3 against milling ions can be improved, and the magnetic recording pattern formation characteristics by the mask layer 3 can be improved. Furthermore, since these materials can be easily dry-etched using a reactive gas, residues during dry etching (step G) can be reduced and contamination of the magnetic recording medium surface can be reduced.
- a resist layer 4 is formed on the mask layer 3 (step C), and a negative pattern of the magnetic recording pattern is transferred to the resist layer 4 using a stamp 5 (step D).
- the thickness 1 of the portion 11 corresponding to the negative pattern of the resist layer 4 after transferring the negative pattern of the magnetic recording pattern to the resist layer 4 is in the range of 0 to 10 nm.
- the material used for the resist layer 4 is a material that is curable by radiation irradiation, and the resist layer 4 is irradiated with radiation during the process of transferring the pattern to the resist layer 4 using the stamp 5 or after the pattern transfer process. It is preferable to do this.
- radiation refers to electromagnetic waves having a broad concept such as heat rays, visible rays, ultraviolet rays, X-rays, and gamma rays.
- the material which has curability by radiation irradiation is, for example, a thermosetting resin for heat rays and an ultraviolet curable resin for ultraviolet rays.
- the edge portion of the mask layer 3 is sagging. Can be eliminated, the shielding property of the mask layer 3 against milling ions can be improved, and the magnetic recording pattern formation characteristics by the mask layer 3 can be improved.
- the stamp 5 is pressed against the resist layer 4 in a state where the fluidity of the resist layer 4 is high, and the resist layer 4 is cured by irradiating radiation in the pressed state, and then the stamp 5 is separated from the resist layer 4.
- the shape of the stamp 5 can be accurately transferred to the resist layer 4.
- a method of irradiating radiation from the opposite side of the stamp 5, that is, the non-magnetic substrate 1 side radiation can be transmitted as a material of the stamp 5.
- a method of selecting a substance and irradiating radiation from the stamp 5 side, a method of irradiating radiation from the side of the stamp 5, a material having a high conductivity with respect to a solid such as a heat ray, or a non-magnetic substrate The method of irradiating radiation by heat conduction from 1 can be used.
- an ultraviolet curable resin such as a novolak resin, an acrylate ester, or an alicyclic epoxy is used, and as a material for the stamp 5, a glass or a resin having high transparency to ultraviolet rays is used. preferable.
- the stamp 5 can be formed by forming a fine track pattern on a metal plate using a method such as electron beam drawing, and the material is required to have hardness and durability that can withstand the process. For example, Ni or the like can be used, but any material can be used as long as it meets the above purpose.
- the stamp 5 can be formed with a servo signal pattern such as a burst pattern, a gray code pattern, and a preamble pattern in addition to a track for recording normal data.
- step E After the negative pattern of the magnetic recording pattern is transferred to the resist layer 4, the portion 11 corresponding to the negative pattern of the resist layer 4 and the portion 6 corresponding to the negative pattern of the mask layer 3 are removed by etching (step E). . Thereafter, a portion 7 of the magnetic layer 2 that is not covered with the mask layer 3 is irradiated with an ion beam 10 from the surface of the resist layer 4 to remove the upper layer portion of the magnetic layer 2 in the portion 7, and the magnetic characteristics of the lower layer portion 8 Is modified (step F).
- the lower limit is preferably 0.1 nm, more preferably 1 nm, and the upper limit is smaller than the thickness of the magnetic layer 2, for example, 15 nm is preferable, and 10 nm is preferable. More preferred.
- the depth m to be removed is less than 0.1 nm, the modification effect of the lower layer portion 8 of the magnetic layer 2 does not appear, and when the depth to be removed is greater than 15 nm, the surface smoothness of the magnetic recording medium deteriorates. However, the flying characteristics of the magnetic head when the magnetic recording / reproducing apparatus is manufactured deteriorates.
- the ion beam 10 is generated using a nitrogen gas, a mixed gas of nitrogen and hydrogen, a mixed gas of nitrogen and neon, or a mixed gas of nitrogen, hydrogen and neon.
- the range of the gas flow rate depends on the size of the reaction vessel, but in a general-sized reaction vessel, the lower limit is preferably 10 sccm, more preferably 13 sccm, most preferably 15 sccm, and the upper limit is 100 sccm. Preferably, 50 sccm is more preferable, and 35 sccm is most preferable. If it is less than 10 sccm, the discharge becomes unstable, which is disadvantageous. If it is more than 100 sccm, the etching rate is lowered, which is disadvantageous.
- the ratio of nitrogen in the entire mixed gas is preferably 63% or less, more preferably 60% or less, and most preferably 55% or less. preferable. The most effective was 50 percent. If the ratio of nitrogen is less than 35%, the etching rate is lowered, which is inconvenient. On the other hand, if it is more than 90%, the modification of the magnetic properties of the lower layer 8 becomes insufficient, which is inconvenient.
- the ratio of nitrogen in the entire mixed gas is preferably 80% or less, more preferably 70% or less, and most preferably 60% or less. preferable. The most effective was 50 percent. If the ratio of nitrogen is less than 20%, the etching rate is lowered, which is disadvantageous. On the other hand, if it is more than 80%, the modification of the magnetic properties of the lower layer 8 becomes insufficient, which is inconvenient.
- the ratio of nitrogen in the total mixed gas is preferably 90% or less, more preferably 80% or less, and 70% or less. Most preferably, the proportion of hydrogen is preferably 50 percent or less, more preferably 40 percent or less, and most preferably 30 percent or less. If the ratio of nitrogen is less than 20%, the etching rate is lowered, which is disadvantageous. On the other hand, if it is more than 90%, the modification of the magnetic properties of the lower layer 8 becomes insufficient, which is inconvenient.
- the lower limit is, 3.0 ⁇ 10 15 is preferably atoms / cm 2, 4.0 ⁇ 10, more preferably 15 atoms / cm 2, 4.8 ⁇ 10 15 atoms / cm 2
- the upper limit is preferably 1.2 ⁇ 10 16 atoms / cm 2 , more preferably 1.0 ⁇ 10 16 atoms / cm 2, and most preferably 8.0 ⁇ 10 15 atoms / cm 2 . If it is less than 3.0 ⁇ 10 15 atoms / cm 2 , the etching rate is lowered, which is disadvantageous.
- the lower limit of the acceleration voltage range is preferably 0.3 keV, more preferably 0.45 keV, most preferably 0.8 keV, and the upper limit is preferably 3.5 keV, more preferably 2.5 keV. 2 keV is most preferred. If it is smaller than 0.3 keV, the etching rate is lowered, which is disadvantageous. On the other hand, if it is larger than 3.5 keV, the mask resistance is poor, which is inconvenient.
- the lower limit is preferably 0.05 nm / second, more preferably 0.07 nm / second, most preferably 0.08 nm / second, and the upper limit is preferably 2.5 nm / second.
- 0.8 nm / second is more preferable, and 1.0 nm / second is most preferable. If it is slower than 0.05 nm / second, the etching will be slow and productivity will be reduced. On the other hand, if it is faster than 2.5 nm / second, the etching is performed in a short time, and it becomes difficult to control.
- the modification of the magnetic layer 2 refers to partially changing the coercive force, saturation magnetization, remanent magnetization, etc. of the magnetic layer 2 in order to pattern the magnetic layer 2. Indicates that the coercive force is lowered, the saturation magnetization is lowered, and the residual magnetization is lowered.
- the saturation magnetization Ms of the magnetic layer 2 in the region 7 irradiated with the ion beam 10 is 75% or less of the initial (unprocessed), more preferably 50% or less, and the coercive force Hc is the initial value. It is preferable to adopt a method of 50% or less, more preferably 20% or less.
- FIGS. 3 to 5 show that a CoCrPt magnetic film formed with a thickness of 15 nm is made of argon gas, nitrogen gas, a mixed gas of nitrogen and hydrogen (mixing volume ratio is 1: 1), nitrogen and neon.
- Etching of magnetic layer using ion beam generated with mixed gas (mixed volume ratio is 1: 1) and mixed gas of nitrogen, hydrogen and neon (mixed volume ratio is 2: 1: 1 in the order of this gas)
- This is a result of examining changes in the amount (etching depth) and the coercive force (Hc) and saturation magnetization (Ms) of the magnetic layer.
- the ion beam etching using argon while Hc and Ms of the magnetic layer remain until the etching depth reaches 15 nm (until the magnetic layer is completely etched).
- Hc and Ms decrease sharply even with a small etching amount
- Hc of the magnetic layer disappears completely by etching at 9 nm
- Ms of the magnetic layer decreases by etching at 14 nm. Disappear completely.
- the magnetic layer 2 having a magnetically separated magnetic recording pattern is formed. Since the magnetically separated magnetic recording pattern is formed, it is possible to eliminate writing blur when performing magnetic recording on the magnetic recording medium and to provide a magnetic recording medium having a high surface recording density.
- step G the resist layer 4 and the mask layer 3 are removed by dry etching (step G), and a nonmagnetic material is embedded in the recesses as necessary, and then the surface of the magnetic layer 2 is covered with a protective film 9 (step H).
- dry etching is used to remove the resist layer 4 and the mask layer 3, but methods such as reactive ion etching, ion milling, and wet etching may be used.
- the protective film 9 is generally formed by a method of forming a diamond like carbon thin film using P-CVD or the like, but is not particularly limited.
- Examples of the protective film 9 include carbonaceous layers such as carbon (C), hydrogenated carbon (H x C), nitrogenated carbon (CN), amorphous carbon, silicon carbide (SiC), SiO 2 , Zr 2 O 3 , A commonly used protective film material such as TiN can be used.
- the protective film 9 may be composed of two or more layers.
- the thickness of the protective film 9 needs to be less than 10 nm. This is because if the thickness of the protective film 9 exceeds 10 nm, the distance between the head and the magnetic layer 2 increases, and sufficient input / output signal strength cannot be obtained.
- a lubricating layer on the protective film 9.
- the lubricant used for the lubricating layer include a fluorine-based lubricant, a hydrocarbon-based lubricant, and a mixture thereof, and the lubricating layer is usually formed with a thickness of 1 to 4 nm.
- the magnetically separated magnetic recording pattern referred to in the present embodiment is separated by the region 12 where the magnetic layer 2 is modified (demagnetized or weakened) when the magnetic recording medium is viewed from the surface side. Refers to the state. That is, as long as the magnetic layer 2 is separated by modification of the magnetic characteristics when viewed from the surface side, it does not have to be separated at the bottom of the magnetic layer 2, and is included in the concept of magnetically separated magnetic recording patterns.
- the modified region 12 does not have to be completely nonmagnetic. That is, even if the region 12 has a slight coercive force or saturation magnetization, a magnetically separated magnetic recording pattern can be formed if the magnetic head can read and write to the magnetic recording pattern portion. be able to.
- the magnetic recording pattern referred to in the present embodiment is a so-called patterned medium in which the magnetic recording pattern is arranged with a certain regularity for each bit, a medium in which the magnetic recording pattern is arranged in a track shape,
- servo signal patterns and the like are included.
- a step of irradiating the portion 7 of the magnetic layer 2 not covered with the mask layer 3 with the ion beam 10 to remove the upper layer portion of the portion 7 and modifying the magnetic characteristics of the lower layer portion 8 is adopted.
- the ion beam 10 processes only the upper layer portion of the magnetic layer 2, the amount of processing is small, and the generation of dust can be suppressed. As a result, a magnetic recording medium having a clean and smooth surface can be obtained.
- the removal of the upper layer portion of the magnetic layer 2 and the step of modifying the magnetic properties of the lower layer portion 8 can be performed simultaneously. It can be performed with high efficiency.
- the magnetic layer 2 is not oxidized or halogenated.
- the absence of a halogen does not produce a halide, thereby preventing the halide from corroding as a starting point when exposed to the atmosphere.
- the amount of processing is small. Even if the film 9 is formed, a smooth magnetic recording medium can be obtained. Thereby, a magnetic recording medium can be manufactured without increasing a manufacturing process.
- FIG. 2 shows an example of a magnetic recording / reproducing apparatus using the magnetic recording medium described above.
- the magnetic recording / reproducing apparatus shown in FIG. 2 includes the magnetic recording medium 21 described above, a medium driving unit 22 that drives the magnetic recording medium 21 in the recording direction, a magnetic head 23 that includes a recording unit and a reproducing unit, and And a recording / reproduction signal system 25 that combines recording / reproduction signal processing means for reproducing a signal input to the magnetic head 23 and reproducing an output signal from the magnetic head 23. Configured.
- the reproducing head width is made narrower than the recording head width. Can be operated with both of them approximately the same width. As a result, sufficient reproduction output and high SNR can be obtained.
- the reproducing unit of the magnetic head 23 by configuring the reproducing unit of the magnetic head 23 with a GMR head or a TMR head, a sufficient signal intensity can be obtained even at a high recording density, and a magnetic recording apparatus having a high recording density can be realized. Further, when the flying height of the magnetic head 23 is 0.005 ⁇ m to 0.020 ⁇ m, the output is improved and a high device SNR is obtained, and a large capacity and high reliability magnetic recording apparatus is obtained. Can be provided. Further, when the signal processing circuit based on the maximum likelihood decoding method is combined, the recording density can be further improved. For example, the track density is 100 ktrack / inch or more, the linear recording density is 1000 kbit / inch or more, and the recording density is 100 Gbit or more per square inch. A sufficient SNR can also be obtained when recording / reproducing.
- the vacuum chamber in which the glass substrate for HD was set was evacuated to 1.0 ⁇ 10 ⁇ 5 Pa or less in advance.
- the glass substrate used here is composed of Li 2 Si 2 O 5 , Al 2 O 3 —K 2 O, Al 2 O 3 —K 2 O, MgO—P 2 O 5 , Sb 2 O 3 —ZnO. It is made of crystallized glass and has an outer diameter of 65 mm, an inner diameter of 20 mm, and an average surface roughness (Ra) of 2 angstroms.
- thin films were laminated in this order of FeCoB as the soft magnetic layer, Ru as the intermediate layer, and 70Co-5Cr-15Pt-10SiO 2 alloy as the magnetic layer.
- the thickness of each layer was 60 nm for the FeCoB soft magnetic layer, 10 nm for the Ru intermediate layer, and 15 nm for the magnetic layer.
- a mask layer was formed thereon using a sputtering method, and C was used for the mask layer to a thickness of 20 nm.
- a resist was applied by spin coating.
- a novolac resin which is an ultraviolet curable resin, was used.
- the film thickness was 60 nm.
- a stamp made of glass having a negative pattern of a magnetic recording pattern was further pressed against the resist layer at a pressure of 1 MPa (about 8.8 kgf / cm 2 ).
- ultraviolet rays having a wavelength of 250 nm were irradiated for 10 seconds from the top of a glass stamp having an ultraviolet transmittance of 95% or more to cure the resist.
- the stamp was separated from the resist layer, and the magnetic recording pattern was transferred.
- the convex portion of the resist layer has a circumferential shape with a width of 64 nm
- the concave portion of the resist layer (the portion corresponding to the negative pattern) has a circumferential shape with a width of 30 nm.
- the angle of the concave portion of the resist layer with respect to the substrate surface was approximately 90 degrees.
- the dry etching conditions are as follows: O 2 gas is 40 sccm, pressure is 0.3 Pa, high frequency plasma power is 300 W, DC bias is 30 W, etching time is 10 seconds for resist etching, and O 2 gas is 50 sccm for etching the C layer.
- the pressure was 0.6 Pa
- the high-frequency plasma power was 500 W
- the DC bias was 60 W
- the etching time was 30 seconds.
- the surface of the portion not covered with the mask layer with the magnetic layer was irradiated with an ion beam.
- the ion beam was generated using a mixed gas of nitrogen gas 40 sccm, hydrogen gas 20 sccm, and neon 20 sccm.
- the amount of ions was 5.5 ⁇ 10 15 atoms / cm 2
- the acceleration voltage was 1.5 keV
- the etching rate was 0.1 nm / second
- the etching time was 84 seconds
- the processing depth of the magnetic layer was 8 nm.
- the resist layer and the mask layer were removed by dry etching, a 4 nm carbon protective film was formed on the surface by CVD, and then a lubricant was applied to 1.5 nm to produce a magnetic recording medium.
- the electromagnetic conversion characteristics (SNR and 3T-squash) and the head flying height (glide avalanche) of the magnetic recording medium manufactured by the above method were measured. Evaluation of electromagnetic conversion characteristics was performed using a spin stand. At this time, as an evaluation head, a perpendicular recording head was used for recording and a TuMR head was used for reading, and the SNR value and 3T-squash when a 750 kFCI signal was recorded were measured.
- the manufactured magnetic recording medium had an SNR of 13.7 dB and 3T-square of 86%, excellent RW characteristics, and stable head flying characteristics. That is, the smoothness of the surface of the magnetic recording medium was high, and the separation characteristics by the nonmagnetic part between the tracks of the magnetic layer were excellent.
- the present invention can be widely used in the manufacturing industry for manufacturing magnetic recording media.
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- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
Abstract
L'invention porte sur un procédé de fabrication d'un support d'enregistrement magnétique présentant un motif d'enregistrement magnétique magnétiquement séparé, avec lequel la surface d'une couche magnétique n'est ni oxydée ni halogénée, la surface n'est pas contaminée par de la poussière et les étapes de fabrication ne sont pas compliquées. Ce procédé de fabrication d'un support d'enregistrement magnétique présentant un motif d'enregistrement magnétique ou magnétiquement séparé est caractérisé en ce qu'il comprend, dans cet ordre, une étape dans laquelle une couche magnétique (2) est formée sur un substrat non magnétique (1) ; une étape dans laquelle une couche de masque (3), destinée à former un motif d'enregistrement magnétique, est formée sur la couche magnétique (2) ; une étape dans laquelle une région (7) de la couche magnétique (2) non recouverte par la couche de masque (3) est exposée à un faisceau ionique (10), retirant la partie de couche supérieure de la couche magnétique (2) de ladite région (7) et modifiant la propriété magnétique d'une partie de couche inférieure (8) ; et une étape dans laquelle la couche de masque (3) est retirée.
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JP2002359138A (ja) * | 2001-03-30 | 2002-12-13 | Toshiba Corp | 磁性体のパターニング方法、磁気記録媒体、磁気ランダムアクセスメモリ |
JP2006031789A (ja) * | 2004-07-14 | 2006-02-02 | Tdk Corp | 磁気記録再生装置 |
JP2009170007A (ja) * | 2008-01-11 | 2009-07-30 | Toshiba Corp | 磁気記録媒体の製造方法 |
JP2009181673A (ja) * | 2008-01-31 | 2009-08-13 | Toshiba Corp | 磁気記録媒体の製造方法 |
JP2009181674A (ja) * | 2008-01-31 | 2009-08-13 | Toshiba Corp | 磁気記録媒体の製造方法 |
JP2009301655A (ja) * | 2008-06-13 | 2009-12-24 | Toshiba Corp | 磁気記録媒体の製造方法 |
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JP2002359138A (ja) * | 2001-03-30 | 2002-12-13 | Toshiba Corp | 磁性体のパターニング方法、磁気記録媒体、磁気ランダムアクセスメモリ |
JP2006031789A (ja) * | 2004-07-14 | 2006-02-02 | Tdk Corp | 磁気記録再生装置 |
JP2009170007A (ja) * | 2008-01-11 | 2009-07-30 | Toshiba Corp | 磁気記録媒体の製造方法 |
JP2009181673A (ja) * | 2008-01-31 | 2009-08-13 | Toshiba Corp | 磁気記録媒体の製造方法 |
JP2009181674A (ja) * | 2008-01-31 | 2009-08-13 | Toshiba Corp | 磁気記録媒体の製造方法 |
JP2009301655A (ja) * | 2008-06-13 | 2009-12-24 | Toshiba Corp | 磁気記録媒体の製造方法 |
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