WO2010053406A1 - Source à diodes et à rayons multiples de rayonnement laser cohérent - Google Patents

Source à diodes et à rayons multiples de rayonnement laser cohérent Download PDF

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Publication number
WO2010053406A1
WO2010053406A1 PCT/RU2009/000602 RU2009000602W WO2010053406A1 WO 2010053406 A1 WO2010053406 A1 WO 2010053406A1 RU 2009000602 W RU2009000602 W RU 2009000602W WO 2010053406 A1 WO2010053406 A1 WO 2010053406A1
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Prior art keywords
diode
laser
optical
active
region
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Application number
PCT/RU2009/000602
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English (en)
Russian (ru)
Inventor
Виктор Арчилович ГЕЛОВАНИ
Алексей Николаевич COHK
Игорь Петрович ЯРЕМА
Василий Иванович ШВЕЙКИН
Original Assignee
Gelovani Viktor Archilovich
Sonk Aleksey Nikolaevich
Yarema Igor Petrovich
Shveykin Vasiliy Ivanovich
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Application filed by Gelovani Viktor Archilovich, Sonk Aleksey Nikolaevich, Yarema Igor Petrovich, Shveykin Vasiliy Ivanovich filed Critical Gelovani Viktor Archilovich
Publication of WO2010053406A1 publication Critical patent/WO2010053406A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4075—Beam steering

Definitions

  • the invention relates to key components of optoelectronic technology - compact, efficient, powerful, high-quality radiation sources of laser radiation in a wide wavelength range, namely: to a diode multipath source of laser coherent radiation (in short - DMILKI), made in the form of a combination of a master diode laser and a plurality of coherently connected diode amplifiers.
  • a diode multipath source of laser coherent radiation in short - DMILKI
  • Diode lasers with increased radiation power and improved laser beam quality are known from the following inventions: [US Pat. 4063189, XEROX CORP. (US), 1977, H01S 3/19, 331 / 94.5 H], [RU Patent 2197048, SHVEYKIN B.I., HELOVANI BA, 02/18/2002, H01 S 5/32].
  • the closest in technical essence and the technical result obtained is proposed in the patent [RU Patent 2278455, Shveikin V.I., November 17, 2004, H01S 5/32] injection (hereinafter diode) laser prototype including a heterostructure based on semiconductor compounds, optical faces, reflectors, ohmic contacts, optical resonator.
  • the heterostructure is characterized by the ratio of the effective refractive index n e ⁇ of the heterostructure to the refractive index n W of the leak-in layer, namely, the ratio of n E f to n B t is determined from the range from unity plus delta to unity minus delta, where the delta is determined by a number much less than unity.
  • the heterostructure contains at least one active layer, at least two reflective layers (hereinafter referred to as restrictive layers) of at least one on each side of the active layer, formed from at least one sublayer and having a refractive index less than the effective refractive index of the heterostructure n Ef .
  • the heterostructure also contains a radiation leak-in region.
  • At least one leak-in region is located between the active layer and the corresponding reflective layer on at least one side of the active layer.
  • Region leak-in includes: a leak-in layer of radiation having a refractive index n w and consisting of at least one sublayer; at least one localizing layer consisting of at least one sublayer; the main adjustment layer, consisting of at least one sublayer, having at least one of its sublayers the refractive index is not less than the refractive index n B t of the leak-in layer and adjoining its active layer with one surface; on the opposite side of the main adjustment layer, a localizing layer of the leak-in region is adjacent to its other surface, having a refractive index lower than the refractive index of the main adjustment layer.
  • the reflection coefficients of the reflectors of the optical resonator, as well as the compositions and thicknesses of the heterostructure layers, are chosen such that for a working diode laser, the resulting radiation gain in the active layer is sufficient to maintain the laser generation threshold over the entire range of operating currents.
  • the ratio of n eff / n W in the region of threshold laser currents is determined from the range of values from unity plus gamma to unity minus gamma, where the gamma value is determined by a number less than delta.
  • the main advantages of the prototype diode laser are an increase in the output power of laser radiation, an increase in the size of the emitting area in the vertical plane with a corresponding decrease in the angular divergence of the radiation.
  • the prototype diode laser limits a further increase in the output power while simultaneously and significantly improving the quality of laser radiation, namely, it does not allow implementing a diode multipath source of laser coherently coupled radiation in the form of a combination of a diode laser and diode optical amplifiers.
  • the technical result of the proposed diode multipath source of laser coherent radiation in a wide range of wavelengths is a multiple increase (by one - two or more orders of magnitude) of the output power of its laser amplified radiation for single-frequency, single-mode and multimode types of oscillations, improved efficiency, reliability, increased operating life and modulation speed with a significant simplification of their manufacturing technology and cost reduction.
  • DMILKI diode multipath source of laser coherent radiation
  • the diode laser and diode optical amplifiers are formed in a single semiconductor-based heterostructure comprising at least one active layer, at least two limiting layers, and the radiation leak-in region, located between the active layer and the corresponding limiting layer on at least one side of the active layer, containing at least a leak-in layer, the aforementioned heterostructure being characterized by the ratio of the effective refractive index n Ef of the heterostructure to the refractive index n W of the leak-in layer, namely, the ratio of P e ⁇ to n B t is determined from the range from unit plus delta to unit minus gamma, where delta and gamma are determined by a number much smaller than unity and gamma is greater than delta, - the aforementioned diode laser includes a strip active generation region with an attached strip metallization layer, a lateral boundary a radiation region with an insulating
  • each diode optical amplifier mentioned includes an active amplification region with attached metallization layers, optical faces, ohmic contacts, optical antireflection coatings, the optical antireflection coating on the optical face of the diode amplifier, at least from the output side of the amplified radiation, made with a reflection coefficient close to zero, while
  • the diode laser and diode optical amplifiers are arranged so that their optical axis of radiation propagation is mutually perpendicular, and at the points where each active amplification region of the diode optical amplifiers is connected to the active region of the diode laser generation, there is an integral element for the transfer of a given part of the laser radiation from the diode laser to the diode amplifier conventionally referred to as a rotatable element comprising at least one optical reflective plane of laser radiation placed by a perp which is perpendicular to the planes of the heterostructure layers and penetrates with the intersection of the active layer into the inflow layer of the heterostructure to a depth selected from the range from 20% to 80% of the thickness of the inflow layer of the heterostructure, while the optical reflecting plane is rotated with the active layer intersecting into the layer at an angle of inclination of approximately 45 ° (modulo) with respect to the optical axes of the diode laser and diode optical amplifier.
  • a significant difference of the proposed new DMILK based on the original heterostructure is an effective integrated combination of a master diode laser and a multitude of diode optical amplifiers (hereinafter referred to as diode amplifiers).
  • the novelty of the integrally connected diode laser with diode amplifiers is that the optical axis of the radiation propagation of the diode laser is located at right angles to the optical axes of the diode amplifiers. Integral communication between the diode laser and diode amplifiers is carried out without focusing optics, while the laser radiation is transferred from the diode laser to diode amplifiers using original rotary elements located at the points where the active amplification regions of the diode amplifiers are connected to the active generation region.
  • the lateral confining region of the radiation has at least two subregions, namely, a separation-limiting subregion adjacent to the active generation region and extending from the surface of the heterostructure to a given depth, and a limiting subregion adjacent to the separation-limiting subregion and extending to a depth exceeding the location of the active layer.
  • said separation-restriction subregion may be distributed inside the heterostructure without reaching the active layer of the heterostructure.
  • the need for an unusually deep occurrence of the restrictive subregion is determined by the peculiarity of the aforementioned heterostructure, in which, in the direction perpendicular to the layers of the heterostructure, the size of the waveguide propagation of the radiation of the diode laser and diode amplifiers is comparable to the thickness of the leak-in layer of the heterostructure with the corresponding ratio n e ⁇ to n B t •
  • the reflector of the optical resonator of the diode laser is made with a reflection coefficient close to unity.
  • each said rotary element includes two optical reflecting planes located at right angles, the intersection line of which is located in the middle of the width of the active amplification region at the boundary of its attachment to the side side of the active generation region
  • each rotary element has two additional optical reflective planes symmetrically located to the above two optical reflective planes, located on the opposite side of the active generation region, which is made of double width
  • the said rotary element includes two optical reflective planes displaced one relative to the other along the optical axis of the diode laser by a predetermined distance, while one active amplification region is connected to the active generation region in the region of each indicated reflective plane
  • the active amplification region of the diode amplifier at least between the optical output face of the diode amplifier with an antireflection coating and a rotary element, is made expandable
  • a dividing-limiting subregion is adjacent to each side of the active amplification region of the diode amplifier.
  • a limiting subregion is adjacent to each side of the dividing-limiting subregion
  • the optical resonator of the diode laser is made in the form of a closed ring resonator.
  • the connecting element contains two reflective planes located perpendicular to the plane of the active layer of the heterostructure s penetration into the heterostructure until the boundary layer from the substrate side Moreover, each reflecting plane is attached to the end face of each of the active lasing region, is deployed at an angle of 45 ° (modulo) in relation to the axis of propagation of the laser radiation
  • DMILKI includes at least two parallel-mounted autonomous diode lasers with dull optical resonators, each of which is integrally connected by rotary elements with the corresponding diode amplifiers
  • the technical result is also achieved by the fact that at least two autonomous parallel-mounted diode lasers with blank optical resonators are contained, they are distributed Bragg reflectors (given at different wavelengths).
  • the technical result is also achieved by the fact that the diode laser and diode amplifiers have autonomous ohmic contacts.
  • the essence of the non-obvious DMILK proposed in the present invention consists in the proposed single heterostructure for the diode laser and diode amplifiers with an unusually large size of the near radiation field in the plane perpendicular to the active layer of the heterostructure, as well as in the original and effective integral connection of at least one master diode laser with many diode amplifiers.
  • the peculiarity of the above compound is that the strip active region of the generation of the diode laser is located at right angles to the active regions of the gain of the diode amplifier.
  • rotary elements with reflectors are placed at their intersections, which ensure the flow of a given fraction of the flowing laser radiation from one master diode laser to diode amplifiers, which ensures the coherence of the radiation at the output of the diode amplifiers.
  • the technological implementation proposed in the present invention DMILKI is based on well-known basic technological processes, which are currently well developed and widely used. The proposal satisfies the criterion of “intended applicability)). The main difference in its manufacture is the features of the heterostructure and the integral connection of the master diode laser with many diode amplifiers.
  • FIG. 1 schematically shows a top view of the proposed DMILK, in which one diode laser with a dull reflector of the optical resonator is integrally connected by rotary elements with three diode amplifiers, while the output of the amplified laser radiation is carried out through the illuminated optical face of the diode amplifiers.
  • Figure 2 schematically shows a longitudinal section of a diode laser proposed by DMILKI, made in the middle of the active generation region, along from one reflector of the optical resonator to another.
  • Fig. 1 schematically shows a top view of the proposed DMILK, in which one diode laser with a dull reflector of the optical resonator is integrally connected by rotary elements with three diode amplifiers, while the output of the amplified laser radiation is carried out through the illuminated optical face of the diode amplifiers.
  • Figure 2 schematically shows a longitudinal section of a diode laser proposed by DMILKI, made in the middle of the active generation region, along from one reflector of
  • FIG 3 schematically shows a longitudinal section of one of the diode amplifiers of the proposed DMILK made in the middle of the active amplification region from the output optical face with the antireflective layer to the side of the active generation region.
  • Figure 4 schematically shows a top view of the proposed DMILK, which differs from schematically depicted in figure 1 in that most of the active amplification region adjacent to the output optical face with an antireflective coating is made expandable.
  • Figure 5 schematically shows a top view of the proposed DMILK, which differs from schematically depicted in figure 1 in that two diode amplifiers are connected to one rotary element.
  • Figure 6 schematically shows a top view of the proposed DMILK, which differs from that schematically depicted in Figure 1 in that the rotary element is made with two dopon reflectors, to which are connected two diode amplifiers, the amplified laser radiation of which is directed in the opposite direction.
  • Figure 7 schematically shows a top view of the proposed DMILK, which differs from schematically shown in Figure 1 in that the optical resonator of the diode laser is made in the form of a closed "ring" optical resonator.
  • Fig schematically shows a top view of the proposed DMILKI, which differs from the schematically depicted in Fig.1 in that it additionally introduced a second diode laser integrally connected to two diode amplifiers, while the first and second diode laser are made with Bragg distributed reflectors configured at different wavelengths of laser generation.
  • the proposed DMILKI 10 (see Figs. 1-3), containing a diode laser 20 integrally coupled by rotary elements 30 to diode amplifiers 40, is made on the basis of a laser heterojet 50 grown on a substrate 60 made of a single diode laser and diode amplifiers -type GaAs. Heterostructure
  • the leak-in layer 53 is based on InAIGaAs semiconductor compounds with one active layer 51 of InGaAs. Between the active layer 51 and the bounding layer 52 (from the substrate side) there is a leak-in region including the leak-in layer 53 and the adjustment layer 54. On the opposite side of the active layer is the adjustment layer 55 and the restriction layer 56 with the contact layer 57. Metallization layers and corresponding insulating layers dielectric layers are not shown in the figures. In fact, the totality of all layers of the heterostructure 50 located between the bounding layers 52 and 56 form an expanded waveguide region of the diode laser 20. It is characteristic that the thickness of the leak-in layer 53 can have sizes ranging from 2 ⁇ m to 10 ⁇ m or more.
  • the thickness of the leak-in layer 53 is 7 ⁇ m.
  • the ratio of the effective refractive index n 3ph of the heterostructure 50 to the refractive index n W of the leak-in layer 53 is also characteristic.
  • the calculated n 3ph / n W at current densities of 0.1 kA / cm 2 and 10 kA / cm 2 for the diode laser 20 were respectively, equal to 0.999994 and 0.999881.
  • the wavelength of the laser radiation, determined by the composition and thickness of the active layer 51, is chosen equal to 0.940 ⁇ m. Based on the heterostructure 50 briefly described above, integrally coupled one diode laser 20 and three diode amplifiers 40 are formed.
  • the length of the optical cavity of the diode laser 20 is selected to be 1 mm.
  • the active generation region 23 is made strip-like with a strip width of 8 ⁇ m.
  • the lateral bounding regions 24 adjacent from both sides to the strip active generation region 23 contain two subregions (not indicated in the figures).
  • the first strip dividing-limiting subregion adjacent to the active generation region 23 is formed by etching in the form of a ditch 2 ⁇ m wide to a depth not reaching the depth of the active layer.
  • the second strip limiting subregion adjacent to the first subregion mentioned above is formed by etching in the form of a ditch 25 ⁇ m wide to a depth exceeding the depth of the active layer by 50% of the inflow layer 53. Both ditches are filled with a dielectric.
  • the length and width of the strip active gain region 41 of the diode amplifiers 40 are selected to be 4000 ⁇ m and 20 ⁇ m, respectively.
  • the main characteristics of the lateral bounding regions 42 adjacent to both stripe active reinforcement regions 41 on both sides are chosen to be identical in width and depth to the lateral subdomains of the limiting regions 24 of the diode laser 20.
  • An antireflection coating 44 is applied to the output optical face 43 of the diode amplifiers 40 with reflection coefficients close to zero (less than 0.0001).
  • the integrated optical connection between the diode laser 20 and three diode amplifiers 40 is realized by placing three rotary elements 30 etched in the active generation region 23 of the diode laser 20.
  • Each rotary element 30 includes two vertically oriented optical reflecting planes 31 and 32 that penetrate vertically inward from the contact layer 57 of the heterostructure 50 into the inflow layer 53 to 50% of its thickness.
  • each optical reflective plane 31 and 32 of the rotary element 30 is rotated at an angle of 45 ° (modulo) with respect to the optical axes in the diode laser 20 and in three diode amplifiers 40.
  • DMILK 10 differed from the previous one in that autonomous (separate) ohmic contacts formed by introducing thin dividing strips between ohmic metallization layers (not shown in the figures) at the boundary of active gain regions 41 with rotary ones were formed to the diode laser 20 and diode amplifiers 40 elements 30.
  • DMILK 10 differed from the modification depicted in Figs. 1 to 3 in that it contains fifty diode amplifiers 40 and 50 rotary elements 30 with a length of the optical resonator of the diode laser 20 equal to 10,000 ⁇ m.
  • the next modification of DMILK 10 differed from the modification depicted in Figures 1 to 3 in that the active amplification region of 41 diode amplifiers 40 consisted of two parts.
  • the first part of each active gain region 41 at the output from the rotary element 30 is formed by a strip, and the second part of each active gain region 41 up to the output optical face 43 is formed expandable with an expansion angle of two degrees, while in the expandable part of the active gain region 41 of the diode amplifier 40 lateral limiting areas are absent.
  • DMILK 10 differed from the previous one in that lateral limiting regions were formed in the expandable part of the active amplification region 41 of the diode amplifier 40.
  • DMILK 10 differed from the modification depicted in Figures 1 to 3 in that in each rotary element 30 the optical reflecting planes 31 and 32 are spaced apart by a certain distance along the optical axis of laser propagation radiation in the diode laser 20, with each rotary element 30 integrally connecting the diode laser 20 with two active amplification regions 41, the width of which is two times less.
  • the following modification of DMILK 10 differed from the modification depicted in Figs. 1 to 3 as follows.
  • the active generation region is made twice as wide.
  • two reflective planes 33 and 34 are symmetrically arranged in each rotary element 30.
  • a diode amplifier 40 with oppositely directed laser radiation amplification is connected to the diode laser.
  • the next modification of DMILK 10 differed from the modification depicted in Figs. 1 to 3 in that the optical resonator of the diode laser 20 is made in the form of a "ring" (closed) optical resonator.
  • the diode laser 20 further comprises, in parallel and integrally coupled to the strip active generation region 23, a second strip active generation region 25.
  • This coupling is realized by the additionally introduced two rotary-connecting elements 26 ,. which are attached to both ends of the strip active generation regions 23 and 25.
  • Each rotary-connecting element 26 includes two reflective planes 27, rotated at an angle of 45 ° (modulo) with respect to the corresponding axes of laser radiation propagation in a diode laser (see Fig.
  • DMILK 10 differed from the modification depicted in Figs. 1 - 3 in that it additionally contains a second diode laser 20 * located in parallel, in which two rotary elements 30 * are placed with two active regions integrally connected to them amplification 41.
  • Deaf reflectors of the diode laser 20 and the second diode laser 20 * were made in the form of distributed Bragg reflectors, respectively, 28 and 29, tuned to different wavelengths.
  • the part of the lateral limiting region designated as 24 * and located between the active regions 23 of the diode lasers 20 and 20 * opposite each of the rotary elements 30 * consists of only separation-restrictive subdomain, not crossing the active layer 21.
  • the length of this section of the lateral restrictive region is equal to the width of the active gain region 31.
  • DMILKI 1 differed from the previous one in that it additionally contains nine parallel-mounted diode lasers with an increased length of optical resonators up to 3000 ⁇ m.
  • Diode multi-beam sources of laser coherent radiation are used in fiber-optic communication and information transfer systems, in optical superhigh-speed computing and switching systems, in the creation of laser technological equipment, medical equipment, for the realization of lasers with a doubled frequency of generated radiation, and also for pumping solid-state and fiber lasers and amplifiers.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L’invention concerne particulièrement une source à diodes et à rayons multiples d’un rayonnement laser cohérent, laquelle consiste en une combinaison intégrale d’un laser à diodes émetteur et d’une pluralité d’amplificateurs optiques à diodes, ci-après appelés amplificateurs à diodes. L’axe optique de diffusion du rayon du laser à diodes est à angle droit par rapport aux axes optiques des amplificateurs à diodes. La liaison intégrale entre le laser à diode et les amplificateurs à diodes se fait sans optiques de focalisation, et le flux du rayonnement laser du laser à diodes vers les amplificateurs à diodes se fait à l’aide d’éléments rotatifs originaux qui sont disposés aux endroits où se rejoignent les zones d’amplification actives des amplificateurs à diodes et la zone de génération active du laser à diodes. On obtient ainsi un accroissement multiple (d’un ordre de un, deux ou plus) de la puissance de sortie du rayonnement laser amplifié pour des types d’oscillations à fréquence unique, à mode unique ou à modes multiples, ainsi qu’une amélioration de l’efficacité et de la fiabilité, une augmentation des ressources fonctionnelles et de la vitesse de modulation tout en simplifiant fortement les techniques de fabrication et en réduisant les coûts propres. Les sources à diodes et à rayons multipler de rayonnement laser cohérent de la présente invention peuvent être utilisées dans des systèmes de fibres optiques de communication et de transmission d’informations, dans des systèmes de calcul et de commutation optiques à grande vitesse, lors de la fabrication d’équipements laser industriels, dans des appareils médicaux, dans la fabrication de lasers ayant une fréquence de rayonnement généré multipliée par deux, ainsi que pour le pompage de lasers et d’amplificateurs à corps solides et à fibres.
PCT/RU2009/000602 2008-11-06 2009-11-06 Source à diodes et à rayons multiples de rayonnement laser cohérent WO2010053406A1 (fr)

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RU2008143734 2008-11-06

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2134007C1 (ru) * 1998-03-12 1999-07-27 Государственное предприятие Научно-исследовательский институт "Полюс" Полупроводниковый оптический усилитель
JP2003078209A (ja) * 2001-09-05 2003-03-14 Fujitsu Ltd 光半導体装置
RU2278455C1 (ru) * 2004-11-17 2006-06-20 Василий Иванович Швейкин Гетероструктура, инжекционный лазер, полупроводниковый усилительный элемент и полупроводниковый оптический усилитель
EP1906499A1 (fr) * 2006-09-28 2008-04-02 OSRAM Opto Semiconductors GmbH Laser sémi-conducteur à émission latérale possedant plusieurs diodes laser integrées monolithiquement

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2134007C1 (ru) * 1998-03-12 1999-07-27 Государственное предприятие Научно-исследовательский институт "Полюс" Полупроводниковый оптический усилитель
JP2003078209A (ja) * 2001-09-05 2003-03-14 Fujitsu Ltd 光半導体装置
RU2278455C1 (ru) * 2004-11-17 2006-06-20 Василий Иванович Швейкин Гетероструктура, инжекционный лазер, полупроводниковый усилительный элемент и полупроводниковый оптический усилитель
EP1906499A1 (fr) * 2006-09-28 2008-04-02 OSRAM Opto Semiconductors GmbH Laser sémi-conducteur à émission latérale possedant plusieurs diodes laser integrées monolithiquement

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