WO2010047556A3 - 실리콘 단결정 잉곳 성장 장치의 시드척 - Google Patents

실리콘 단결정 잉곳 성장 장치의 시드척 Download PDF

Info

Publication number
WO2010047556A3
WO2010047556A3 PCT/KR2009/006151 KR2009006151W WO2010047556A3 WO 2010047556 A3 WO2010047556 A3 WO 2010047556A3 KR 2009006151 W KR2009006151 W KR 2009006151W WO 2010047556 A3 WO2010047556 A3 WO 2010047556A3
Authority
WO
WIPO (PCT)
Prior art keywords
seed
single crystal
crystal silicon
seed chuck
silicon ingot
Prior art date
Application number
PCT/KR2009/006151
Other languages
English (en)
French (fr)
Other versions
WO2010047556A2 (ko
Inventor
문지훈
김봉우
최일수
이건호
정승
김도연
Original Assignee
주식회사 실트론
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 실트론 filed Critical 주식회사 실트론
Publication of WO2010047556A2 publication Critical patent/WO2010047556A2/ko
Publication of WO2010047556A3 publication Critical patent/WO2010047556A3/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 실리콘 단결정 잉곳 성장 장치의 시드척을 개시한다. 본 발명에 따른 실리콘 단결정 잉곳 성장 장치의 시드척은, 쵸크랄스키 법에 의한 실리콘 단결정 잉곳 성장 장치에 구비되어, 실리콘 단결정 잉곳을 성장시키는 시드를 결합 고정시키는 시드척에 있어서, 상부에 상승 또는 하강하는 로프가 체결되는 로프 체결부가 형성되고, 하부에 상기 시드가 수용되어 고정되는 시드 결합부가 형성된 시드척 몸체;를 포함하고, 상기 시드척 몸체에는 내부에 진공 상태를 유지한 채 일정량의 냉매를 충진시킨 후 양 끝단을 밀봉시켜 형성된 냉각 파이프가 삽입될 수 있도록 상기 시드척 몸체에 삽입홀이 형성되고, 상기 삽입홀에 상기 냉각 파이프가 결합되는 것을 특징으로 한다. 본 발명에 따르면, 냉각수단이 마련된 시드척을 이용하여 몸체부 성장 공정 시 시드 넥부위의 온도를 저하시켜 인장강도 값을 증가시킬 수 있다. 이에 따라, 대구경 실리콘 단결정 잉곳을 안전하게 성장시킬 수 있다.
PCT/KR2009/006151 2008-10-24 2009-10-23 실리콘 단결정 잉곳 성장 장치의 시드척 WO2010047556A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080104931A KR101068740B1 (ko) 2008-10-24 2008-10-24 실리콘 단결정 잉곳 성장 장치의 시드척
KR10-2008-0104931 2008-10-24

Publications (2)

Publication Number Publication Date
WO2010047556A2 WO2010047556A2 (ko) 2010-04-29
WO2010047556A3 true WO2010047556A3 (ko) 2010-07-22

Family

ID=42119855

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/006151 WO2010047556A2 (ko) 2008-10-24 2009-10-23 실리콘 단결정 잉곳 성장 장치의 시드척

Country Status (2)

Country Link
KR (1) KR101068740B1 (ko)
WO (1) WO2010047556A2 (ko)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0144512A1 (en) * 1983-10-28 1985-06-19 Sumitomo Electric Industries Limited Semiconductor boule pulling rod
JPS62176982A (ja) * 1986-01-27 1987-08-03 Gakei Denki Seisakusho:Kk 化合物半導体単結晶の引上装置
JPS63176388A (ja) * 1987-01-12 1988-07-20 Toshiba Corp 単結晶引上げ装置
JP2004238225A (ja) * 2003-02-04 2004-08-26 Hitachi Cable Ltd 半導体結晶製造装置
JP2008222481A (ja) * 2007-03-12 2008-09-25 Hitachi Cable Ltd 化合物半導体の製造方法及び装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0144512A1 (en) * 1983-10-28 1985-06-19 Sumitomo Electric Industries Limited Semiconductor boule pulling rod
JPS62176982A (ja) * 1986-01-27 1987-08-03 Gakei Denki Seisakusho:Kk 化合物半導体単結晶の引上装置
JPS63176388A (ja) * 1987-01-12 1988-07-20 Toshiba Corp 単結晶引上げ装置
JP2004238225A (ja) * 2003-02-04 2004-08-26 Hitachi Cable Ltd 半導体結晶製造装置
JP2008222481A (ja) * 2007-03-12 2008-09-25 Hitachi Cable Ltd 化合物半導体の製造方法及び装置

Also Published As

Publication number Publication date
WO2010047556A2 (ko) 2010-04-29
KR101068740B1 (ko) 2011-09-28
KR20100045821A (ko) 2010-05-04

Similar Documents

Publication Publication Date Title
JP4103593B2 (ja) 固形状多結晶原料のリチャージ管及びそれを用いた単結晶の製造方法
CN102534755B (zh) 再装填原料多晶硅的方法
TW200613588A (en) Silicon wafer, method for manufacturing the same, and method for growing silicon single crystal
SG144051A1 (en) Method and device for producing semiconductor wafers of silicon
WO2008093576A1 (ja) シリコン結晶素材及びその製造方法
CN109505004B (zh) 一种避免拉晶过程中单晶硅棒掉落的方法
WO2013025024A3 (en) Ingot growing apparatus and method of manufacturing ingot
WO2013002539A3 (en) Apparatus and method for growing silicon carbide single crystal
MY150565A (en) Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation
KR20120091034A (ko) 시드유지부재 및 그 시드유지부재를 이용한 다결정 실리콘 제조방법
CN102575377A (zh) 石英坩埚及其制造方法
WO2009140406A3 (en) Crystal growth apparatus for solar cell manufacturing
EP1498516B8 (en) Single crystal silicon producing method, single crystal silicon wafer and ingot produced thereby
WO2016117847A3 (ko) 단결정 잉곳의 직경 제어 시스템 및 제어 방법
WO2010047556A3 (ko) 실리콘 단결정 잉곳 성장 장치의 시드척
WO2009025342A1 (ja) Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
TW201129730A (en) Single crystal pulling apparatus and single crystal pulling method
CN201268729Y (zh) 籽晶夹持装置
WO2010058980A3 (en) Single crystal growing apparatus
EP2045371A3 (en) Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot
JP4626424B2 (ja) 単結晶引上げ装置
JP2004250305A (ja) 湯面振動を抑制した石英ガラスルツボ
JP3799911B2 (ja) シードチャック
CN202030859U (zh) 一种单晶直拉工艺用籽晶夹头
KR101203969B1 (ko) 실리콘 단결정 잉곳 형성장치

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09822232

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09822232

Country of ref document: EP

Kind code of ref document: A2