WO2010037288A1

WO2010037288A1 - Magnetic path mechanism, magnetron sputtering cathode comprising the mechanism, and manufacturing method of the same

Info

Publication number: WO2010037288A1
Application number: PCT/CN2009/073410
Authority: WO
Inventors: 范继良; 刘涛
Original assignee: 东莞宏威数码机械有限公司
Priority date: 2008-09-26
Filing date: 2009-08-21
Publication date: 2010-04-08
Also published as: CN101447274B; CN101447274A

Abstract

A magnetic path mechanism, a magnetron sputtering cathode comprising the mechanism, and the manufacturing method of the same are provided. Besides the outer-ring permanent magnets (27), two sets of bias permanent magnets (25,26) are added to the magnetic path mechanism. The two sets of permanent magnets are provided inside the outer-ring permanent magnets and are individually driven to rotate. The two sets of permanent magnets are added into the magnetostatic field produced by the outer-ring permanent magnets to adjust the distribution of the magnetic field in the surface space of target. A controllable spacial magnetic field is distributed in the different areas over the target to produce different plasma concentrations. The different areas of the target are sputtered selectively, the film thickness which is monotonously variational in the radial direction is obtained. Simultaneously the uniformity of the film thickness is improved, and the utilization ratio of the target is increased.

Description

Magnetic circuit mechanism and magnetron sputtering cathode having the same and manufacturing method thereof

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a magnetic field generating mechanism, and more particularly to a magnetic circuit mechanism in a vacuum coating apparatus for forming a reflective layer or a semi-reflective layer of an optical data carrier capable of generating a varying magnetic field. Background technique

It is well known that in sputtering methods, ions are generally generated by collisions between gas atoms and electrons in a glow discharge. These ions are accelerated into the target cathode and cause atoms of the target to be ejected from the surface of the cathode. The substrate is placed in position to intercept a portion of the atom being ejected. Therefore, the target plating film is deposited on the surface of the substrate.

Sputter coating is a widely used technique for depositing a thin film of material on a substrate. Sputtering is a physical spray on a material caused by gas ions bombarding the target. In one form of this technique, known DC sputtering, positive ions generated by plasma discharge between the anode and the target cathode are attracted to the target cathode and strike the target cathode. The atoms are knocked out from the surface of the target of the cathode, thus providing atoms. Some of the knocked out atoms strike the surface of the substrate to form a coating. In reactive sputtering, gaseous species also appear on the surface of the substrate and react with atoms from the surface of the target, in some embodiments, with these atoms to form the desired coating material.

In operation, when argon is introduced into the coating chamber, a DC voltage applied between the target cathode and the anode ionizes the argon to form a plasma, and the positively charged argon ions are directed to the negative Charge target. The ions strike the target with a large amount of energy and cause the target atoms or groups of atoms to splash from the target. Some of the sputtered targets strike the wafer or substrate material to be coated and deposit on the wafer or substrate material, thus forming a coating. In order to obtain an increased precipitation rate and lower the operating pressure, a magnetically enhanced target has been used. In a planar magnetron, the cathode includes permanent magnets that are arranged in a closed loop manner and mounted at a position that is relatively fixed with a flat target plate. The resulting magnetic field causes electrons to move within a closed loop, commonly referred to as a "runway," which establishes a channel or region along which sputtering or corrosion of the target occurs. In a magnetron cathode, a magnetic field constraint The glow discharge plasma is described and the length of the path in which the electrons move under the influence of an electric field is increased. This results in an increase in the probability of collision of atoms with electrons in the gas, resulting in a much higher sputtering rate than would be obtained without the use of magnetic confinement. Moreover, the sputtering method can also be achieved with much lower gas pressure.

One limitation of planar and cylindrical magnetrons used in reactive or non-reactive sputtering is that membranes deposited by sputtering do not achieve the high degree of homogeneity and repeatability required in many sophisticated applications. And a film with a monotonous change in the radial direction.

For the above reasons, it is desirable to have a magnetron sputtering apparatus that increases throughput and product uniformity from equipment to equipment, from operating batches to running batches through separate substrates. The geometry of the equipment in the installation, and in particular the relationship between the cathode and the object to be coated, has a significant impact on the deposition speed and the area of the coating as well as the quality and consistency of the product. The change in layer thickness across the substrate is called runof f. This overflow can be predicted by molding the geometry of the device. Masks are used in many coating equipment to reduce the change in coating speed to an acceptable level. But over time, these masks will collect a large amount of coating material. Once the material reaches a critical thickness, it will flake off and promote the formation of particles which will reduce the quality of the coating. And cleaning the weld and maintaining such a mask is also a very delicate process.

In order to overcome the above difficulties in technology and technology, today, a scheme for dynamically superimposing the original static magnetic field is proposed to obtain a film having uniformity in height, repeatability, and monotonous change in radial direction. . Currently known is a device of such geometry that rotates a separate substrate about its own axis, the device having a partial cathode that superimposes a static magnetic field, the cathode being perpendicular to the substrate It is roughly the same as the horizontal distance. This geometry results in a low overflow without the use of a mask. However, this structure wastes the coating material and is complicated in structure and cost. In U.S. Patent No. 6,668,637, a set of annularly distributed permanent magnets is placed on the surface of a clean target, which forms a static magnetic field with the pole piece and the yoke, and a set of statically opposed magnets are sputtered. The central axis of the source is the axis of rotation, which is driven by external force during the sputtering process. As a result, the plasma etched area sweeps across the entire surface of the target, and the target utilization, film thickness uniformity, and target lifetime are improved. However, the structure is too complicated and the cost is high, which is not conducive to industrial production. US Patent No. 3,956,093, A coating device is described in which a coil is disposed on the periphery of a target. The coil is connected to an AC power source, and the magnetic field generated by the coil is superimposed with the spatial static magnetic field generated by the yoke magnet to optimize the magnetic field distribution of the surface space of the target. The effect is not high. In U.S. Patent No. 5,262,030, it is described that during the sputtering process, a group of electromagnetic coils are selectively opened or closed to generate or eliminate magnetic field lines parallel to the surface of the target, and the target is determined by changes in the magnetic field. Sputtered area. The opening or closing of the coil causes the magnetic field to overlap, and the final result is that the plasma etched area moves on the surface of the target or selectively etches a certain area, but the thickness of the sputtered film is not uniform. In addition, the introduction of such technology can be found in the "membrane filter" by HA Mac leod in 2004) (Physics Institute Press, Di rac House, Temple Back, Br is tol BS1 6BE, UK, 2001) and P. Found in Baumei s ter, "Optical Coating Technology" (SPIE, Bel lingham, WA).

Therefore, there is an urgent need for a magnetron sputtering cathode capable of generating a varying magnetic field and controlling a magnetic field change and distribution thereof, the magnetron sputtering cathode generating a controllable spatial magnetic field, and the controllable magnetic field is distributed in the target Different regions above the surface form different plasma concentrations, selectively sputtering different regions of the target, obtaining a film thickness that is monotonously changed in the radial direction, and simultaneously improving the uniformity of the film thickness and improving the utilization of the target, comprehensive Improve the sputtering characteristics of the sputtering source. Summary of the invention

SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetic circuit mechanism capable of generating a varying magnetic field and controlling the change and distribution of the magnetic field.

Another object of the present invention is to provide a magnetron sputtering cathode having a magnetic circuit mechanism capable of generating a varying magnetic field and controlling its magnetic field variation and distribution, the magnetron sputtering cathode generating a controllable spatial magnetic field, controllable The magnetic field distribution forms different plasma concentrations in different regions above the surface of the target, selectively sputtering different regions of the target to obtain a monotonously varying film thickness in the radial direction, while improving the uniformity of the film thickness and improving the target The utilization rate improves the sputtering characteristics of the sputtering source.

It is still another object of the present invention to provide a magnetron sputtering cathode manufacturing method having a variable magnetic field and controlling its magnetic field variation and distribution.

In order to achieve the above object, the technical solution of the present invention provides a magnetic circuit mechanism, and the magnetic circuit mechanism The utility model comprises a yoke, a pole piece, an outer ring permanent magnet, a central cooling rod and a base, wherein a central cooling rod is connected to the center of the base, and the outer ring permanent magnet or the like is radially distributed around the central cooling rod, the yoke One end of the iron is connected to the base, the other end is connected to the outer ring permanent magnet, the outer ring permanent magnet is connected between the pole piece and the yoke, and the yoke and the pole piece are negative electrodes. The central cooling rod and the base are positive poles, and further comprising a biasing permanent magnet group, wherein the biasing permanent magnet group comprises an inner ring permanent magnet, a middle ring permanent magnet, and a driving mechanism, wherein the inner ring permanent magnet is centered Disposed around the central cooling rod, the middle ring permanent magnet is centrally offset around the central cooling rod, and the middle ring permanent magnet is located between the outer ring permanent magnet and the inner ring permanent magnet thereof, the driving The mechanism is coupled to the base, and the driving mechanism independently drives the inner ring permanent magnet and the middle ring permanent magnet to rotate around the central cooling rod.

The magnetron sputtering cathode having the magnetic circuit mechanism of the invention is adapted to be mounted on a vacuum chamber in a vacuum coating device, the magnetron sputtering cathode comprising a magnetic circuit mechanism, a cooling mechanism, a sealing mechanism and an insulating mechanism, the magnetic circuit The mechanism includes a yoke, a pole piece, an outer ring permanent magnet, a central cooling rod and a base, the central cooling rod is connected to the center of the base, and the outer ring permanent magnet or the like is radially distributed around the central cooling rod. One end of the yoke is connected to the base, and the other end is connected to the outer ring permanent magnet, the outer ring permanent magnet is connected between the pole piece and the yoke, and the yoke and the pole piece are a negative electrode, the central cooling rod and the base are positive electrodes, the cooling mechanism is located between the central cooling rod and the yoke, the cooling mechanism cools the magnetic circuit mechanism, and the sealing mechanism is located at the magnetic circuit mechanism Between the cooling mechanism and the cooling mechanism, the cooling mechanism and the magnetic circuit mechanism are sealed to each other, and the insulating mechanism is insulated from the positive and negative electrodes in the magnetic circuit mechanism, wherein The permanent magnet group includes an inner ring permanent magnet, a middle ring permanent magnet, and a driving mechanism, wherein the inner ring permanent magnet is centrally offset around the central cooling rod, and the middle ring permanent magnet Centered around the central cooling rod, and the middle ring permanent magnet is located between the outer ring permanent magnet and the inner ring permanent magnet, the driving mechanism is connected to the base, and the driving mechanism is independently driven The inner ring permanent magnet and the middle ring permanent magnet rotate around the central cooling rod.

Preferably, the driving mechanism includes an inner ring driving mechanism and an inner ring driving mechanism, and the inner ring driving mechanism includes an inner ring gear motor, an inner ring bearing, an inner ring gear and an inner ring mounting plate, and the inner ring gear motor Engaging with the inner ring gear, one end of the inner ring bearing is pivotally connected to the inner ring gear, and the other end is The central cooling rod is connected, one end of the inner ring mounting plate is connected to the inner ring gear, and the other end is connected to the inner ring permanent magnet. The inner ring driving mechanism and the middle ring driving mechanism are independent of each other, so that the respective rotating speeds of the inner ring permanent magnet and the middle ring permanent magnet can be freely mobilized, and the inner ring permanent magnet and the middle ring permanent magnet rotating speed can be The same, but also different, convenient to adjust the spatial magnetic field distribution according to actual needs.

Preferably, the middle ring drive mechanism includes a middle ring gear motor, a middle ring gear and a middle ring mounting plate, the middle ring gear is an internal gear, and the middle ring gear motor meshes with the middle ring gear, The middle ring gear is pivotally connected to the inner ring gear, and one end of the middle ring mounting plate is connected to the middle ring gear, and the other end is connected to the middle ring permanent magnet. The inner ring gear also serves as a rotating shaft of the middle ring gear while driving the inner ring permanent magnet to rotate, and the inner ring gear eliminates the oil retaining plate for the internal gear, and at the same time ensures internal cleaning.

Preferably, the two ends of the middle ring mounting plate have a small gap between the two ends of the middle ring mounting plate and the inner ring mounting plate. It can effectively achieve the insulation between the positive and negative electrodes, and can effectively generate the potential difference, which ensures the normal operation of the magnetron sputtering cathode.

Preferably, the inner ring permanent magnet and the middle ring permanent magnet are distributed around the center cooling rod in a circular or elliptical center offset. The spatial magnetic field distribution is more easily controlled according to actual needs, and is convenient for operation.

Preferably, the base is a hollow structure. Cooling water is added to the hollow base to dissipate heat generated by the magnetron sputtering cathode, thereby cooling the heat.

Preferably, the inner ring permanent magnet is higher than the middle ring permanent magnet. The magnetic field superposition between the inner ring permanent magnet and the outer ring permanent magnet and the middle ring permanent magnet is increased, and the balance of the magnetic field density caused by the inner ring permanent magnet from the outer ring permanent magnet being farther away from the middle ring permanent magnet is weakened.

Preferably, the cooling mechanism is a hollow cooling plate, and the cooling plate is located below the inner ring permanent magnet and the middle ring permanent magnet between the central cooling rod and the yoke; the lower end of the yoke extends to the Below the cooling plate; the inner ring permanent magnet and the middle ring permanent magnet are located above the cooling plate, and the inner ring permanent magnet and the middle ring permanent magnet are adjustable in position relative to the outer ring permanent magnet. It is convenient to adjust the distribution of the spatial magnetic field according to actual needs.

Preferably, the cooling plate is a negative electrode, and the cooling plate is insulated from the central cooling rod. The sleeve is sleeved over the central cooling rod. It can effectively achieve the insulation between the positive and negative electrodes, ensuring the normal operation of the magnetron sputtering cathode.

The magnetron sputtering cathode manufacturing method of the present invention comprises the following steps (1) forming a yoke, a pole piece, a central cooling rod and the like which are radially connected to the central cooling rod for connecting a base and a base for generating a static magnetic field. a magnetic circuit mechanism composed of outer ring permanent magnets; (2) forming a cooling mechanism for cooling the magnetic circuit mechanism; (3) forming a sealing mechanism for sealing the magnetic circuit mechanism, the sealing mechanism The cooling mechanism and the magnetic circuit mechanism are sealed to each other; (4) forming an insulating mechanism for insulating the positive and negative electrodes in the magnetic circuit mechanism; and (5) forming a magnetic circuit mechanism for generating A set of biasing permanent magnets of a dynamic magnetic field in which the outer ring permanent magnets are sequentially inwardly centered on the central cooling rod and are center-biased and distributed in the middle ring permanent magnets and the inner ring permanent magnets and independently driven by the driving mechanism.

Compared with the prior art, the magnetic circuit mechanism of the present invention adds two sets of independently rotating inner ring permanent magnets and middle ring permanent magnets in a conventional outer ring permanent magnet to form a magnetic circuit. The change of the magnetic field generated by the mechanism and the control of the distribution, the above-mentioned independently rotating bias magnet is added to the static magnetic field generated by the outer ring permanent magnet to adjust the magnetic field distribution of the surface space of the target, and the controllable spatial magnetic field is distributed. Different regions above the surface of the target form different plasma concentrations, so that on the one hand, the magnetron sputtering cathode of the present invention can selectively sputter different regions of the target to obtain a monotonously varying film thickness in the radial direction, and the other On the other hand, it can effectively improve the uniformity of the plated film thickness and improve the utilization rate of the target, and comprehensively improve the sputtering characteristics of the sputtering source, and the structure is simple and convenient to operate. DRAWINGS

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing the magnetron sputtering cathode of the present invention mounted on a vacuum chamber to coat a substrate. Figure 2 is a cross-sectional view of Figure 1 taken along the line E-E.

Figure 3 is an enlarged schematic view of a portion A of Figure 1.

Figure 4 is an enlarged schematic view of a portion B of Figure 1.

Fig. 5 is a view showing the distribution of magnetic lines of force when the magnetron sputtering cathode is coated on a substrate.

6 is a schematic view showing the positional relationship of the magnetron sputtering cathode inner ring permanent magnet, the middle ring permanent magnet, the Xibul circle permanent magnet and the central cooling rod according to the present invention. Figure 7 is a flow chart of a method of manufacturing a magnetron sputtering cathode of the present invention. detailed description

As shown in FIG. 1, the magnetron sputtering cathode 1 of the present invention is mounted above the vacuum chamber 2 in the vacuum coating apparatus for coating the DVD disc substrate 4, and can be easily opened to replace the large photomask (MASK). 3. Small photomask 5 and target 29. The DVD disc substrate 4 is located under the magnetron sputtering cathode 1 of the present invention, and a set of large photomask 3 and small photomask 5 respectively form a mask 36 and a mask 39 on the outer and inner edges of the DVD disc substrate 4. The exposed position of the above DVD disc substrate 4 is covered with a target atom of 29 atoms. More specifically, as shown in Figure 2, Figure 3 and Figure 4:

The magnetron sputtering cathode 1 of the present invention comprises a magnetic circuit mechanism, a cooling mechanism, a sealing mechanism and an insulating mechanism, and the magnetic circuit mechanism comprises a yoke 16 , a pole piece 15 , an outer ring permanent magnet 27 , and a central cooling rod 12 . And a base 6 , the central cooling rod 12 is connected to the center of the base 6 , and the outer ring permanent magnet 27 and the like are radially distributed around the central cooling rod 12 , and the yoke 16 6 end is The base 6 is connected, and the other end is connected to the outer ring permanent magnet 27, the outer ring permanent magnet 27 is connected between the pole piece 15 and the yoke 16, and the yoke 16 and the pole piece 15 are negative. The central cooling rod 11 and the base 6 are positive poles, the cooling mechanism is located between the central cooling rod 12 and the yoke 16, the cooling mechanism cools the magnetic circuit mechanism, and the sealing mechanism is located at the Between the magnetic circuit mechanism and the cooling mechanism, the sealing mechanism seals the cooling mechanism and the magnetic circuit mechanism, the insulating mechanism is insulated from the positive and negative poles in the magnetic circuit mechanism, and the central cooling The rod 12 has a hollow structure, through the top of the cooling rod inlet 1 1 Cooling water can be added, and the cooling water added from the water inlet 1 of the cooling rod is used to dissipate heat from the small photomask 5. The cooling water after the small photomask 5 is cooled is discharged from the cooling rod outlet 10, wherein Also included is a biasing permanent magnet group including an inner ring permanent magnet 25, a middle ring permanent magnet 16, and a driving mechanism, the inner ring permanent magnet 25 being centrally offset from the central cooling rod 1 2 The middle ring permanent magnet 26 is centrally offset from the central cooling rod 12, and the middle ring permanent magnet 26 is located between the outer ring permanent magnet 27 and its inner ring permanent magnet 25, the driving mechanism The base 6 is connected to the base 6. More specifically, the base 6 has a bracket 7 , the bracket 7 is connected to the base 6 , the driving mechanism passes through the bracket 7 , and the bracket 7 is a positive pole. a heat-resistant insulating material between the bracket 7 and the yoke 16 The direct connection between the positive and negative electrodes, the drive mechanism independently drives the inner ring permanent magnet 25 and the middle ring permanent magnet 26 to rotate around the central cooling rod 27.

Preferably, the driving mechanism includes an inner ring driving mechanism and a middle ring driving mechanism, and the inner ring driving mechanism includes an inner ring gear motor 9, an inner ring bearing, an inner ring gear 21, and an inner ring mounting plate 24. Specifically, The inner ring bearing includes an inner ring first bearing 22 and an inner ring second bearing 23, the gear of the inner ring gear motor 9 meshes with the inner ring gear 21, the inner ring first bearing 22 and the inner ring The two bearing 23-ends are respectively pivotally connected to the inner ring gear 21, and the other ends are respectively connected to the central cooling rod 12, the inner ring mounting plate 24-end is connected with the inner ring gear 21, and the other end is connected The inner ring permanent magnet 25 is connected; the inner ring drive mechanism and the middle ring drive mechanism are independent of each other, so that the respective rotational speeds of the inner ring permanent magnet 25 and the middle ring permanent magnet 26 can be freely mobilized. The inner ring permanent magnet 25 and the middle ring permanent magnet 26 have the same rotational speed or different, and are convenient for adjusting the spatial magnetic field distribution according to actual needs.

Preferably, the middle ring drive mechanism includes a middle ring gear motor 13 , a middle ring gear 18 and a middle ring mounting plate 17 , the middle ring gear 18 is an internal gear, and the gear of the middle ring gear motor 13 The middle ring gear 18 is meshed, the middle ring gear 18 is pivotally connected to the inner ring gear 21, and one end of the middle ring mounting plate 17 is connected to the middle ring gear 18, and the other end is connected to the middle ring The permanent magnets 26 are connected. The inner ring gear 21 drives the inner ring permanent magnet 25 to rotate, and also serves as a rotating shaft of the middle ring gear 18. Specifically, the inner ring gear 21 and the middle ring gear 18 are connected to the first middle. The ring bearing 19 and the second middle ring bearing 20, the inner ring gear 21 eliminates the oil retaining plate for the internal gear, and at the same time ensures internal cleaning.

Preferably, the base 6 is a hollow structure. Cooling water is added to the hollow base 6, which can be used to dissipate heat generated during the operation of the magnetron sputtering cathode 1, thereby reducing the temperature.

Preferably, the cooling mechanism is a hollow cooling plate 18, and the cooling plate 28 is located below the inner ring permanent magnet 25 and the middle ring permanent magnet 26 between the central cooling rod 12 and the yoke 16 and the target The material 29 is connected, the cooling plate 28 is a negative electrode, and an insulating sleeve 47 is disposed between the cooling plate 28 and the central cooling rod 12, and the insulating sleeve 47 is sleeved on the central cooling rod 12. The insulation between the positive and negative electrodes can be effectively achieved, and the normal operation of the magnetron sputtering cathode 1 is ensured. The cooling plate 28 has a hollow structure, and the cooling water can be added to cool the target 29, and the cooling plate 28 is discharged. The nozzle 14 and the water inlet 8 are symmetrically disposed with respect to the rotation center 30. Specifically, the cooling plate 28 is circular for dissipating heat to the target 29, and the target 29 is fixed below the cooling plate 28. The one near the target mounting surface 41 is a thin plate. Under the action of the water pressure in the cooling plate 28, the thin plate is tightly applied to the target mounting surface 41 to provide a good heat dissipation function to the target 29; The base 6 and the bracket 7 are insulated from each other, and the lower end of the yoke 16 extends below the cooling plate 28 to improve the magnetic permeability of the yoke 16; the inner ring permanent magnet 25 and the middle ring permanent magnet 26 are located at the Above the cooling plate 28, the inner ring permanent magnet 25 and the middle ring permanent magnet 26 are adjustable in position relative to the outer ring permanent magnet 27, which is more convenient to adjust the spatial magnetic field distribution according to actual needs.

As shown in FIG. 5 and FIG. 6, the two ends of the middle ring mounting plate 17 of the magnetron sputtering cathode 1 of the present invention have a small gap 50 between the yoke 16 and the inner ring mounting plate 24, respectively. 60. The gaps 50, 60 can effectively achieve insulation between the positive and negative electrodes, and can effectively generate a potential difference, thereby ensuring the normal operation of the magnetron sputtering cathode 1.

Preferably, the inner ring permanent magnet 25 is higher than the middle ring permanent magnet 26, and the magnetic field between the inner ring permanent magnet 25 and the outer ring permanent magnet 27 and the middle ring permanent magnet 26 is increased, and the balance is due to the inner ring. The effect of the magnetic flux density of the magnet 25 from the outer ring permanent magnet 27 being farther away from the middle ring permanent magnet 26 is weakened.

Preferably, the inner ring permanent magnet 25 and the middle ring permanent magnet 26 are distributed around the central cooling rod 12 in a circular or elliptical center, so that the spatial magnetic field distribution is more easily controlled according to actual needs, which is convenient for Operation, the inner ring permanent magnet 25 and the middle ring permanent magnet 26 have different rotational speeds or different arrangement shapes, which have different effects on the static magnetic field. Specifically, the inner ring permanent magnet 25 and the middle ring permanent magnet 26 are preferably elliptical in the present invention. The inner ring permanent magnet 25 is eccentrically rotated with respect to the rotation center 30; the middle ring permanent magnet 26 is eccentrically rotated with respect to the rotation center 30, the long axis of the elliptical middle ring permanent magnet 26 is increased, and the DVD disc substrate 4 is splashed outside. The shot layer is thickened; the eccentric distance of the elliptical inner ring permanent magnet 25 with respect to the center of rotation 30 is increased, and the sputtered layer of the inner circumference of the DVD disc substrate is thickened.

As shown in FIG. 7, the magnetron sputtering cathode manufacturing method of the present invention comprises the following steps (71): forming a yoke, a pole piece, a central cooling rod and the like, which are connected to the base for generating a static magnetic field, and the like. a magnetic circuit mechanism composed of an outer ring permanent magnet outside the central cooling rod; (72) forming a cooling mechanism for cooling the magnetic circuit mechanism; (73) forming a seal for sealing the magnetic circuit mechanism a mechanism, the sealing mechanism seals the cooling mechanism and the magnetic circuit mechanism; (74) forming an insulating mechanism for insulating the positive and negative electrodes of the magnetic circuit mechanism; and (75) at the magnetic circuit mechanism Forming A biasing permanent magnet group for generating a dynamic magnetic field, wherein the inner ring permanent magnet and the inner ring permanent magnet are centered by the outer ring permanent magnet and the central cooling rod is centered and is driven by the driving mechanism independently .

A detailed description of the working principle of the magnetron sputtering cathode 1 of the present invention for coating the DVD disc substrate 4 will be described in detail with reference to Figs. 1 through 7;

The surface spaces of the outer ring permanent magnet 27, the yoke 16, the pole piece 15, the inner ring mounting plate 24, the inner ring mounting 24 and the target 29 constitute a static magnetic circuit, and a magnetic line 33 having a convex shape is formed below the surface of the target 29, 34, 37, 38 are distributed, the pole piece 15 extends close to the lower surface of the target 29, and a magnetic line distribution of a convex shape is formed below the surface of the target 29, thereby increasing the sputtering rate of the target 29. The rotationally varying magnetic field excited by the inner ring permanent magnet 25 and the middle ring permanent magnet 26 is superimposed on the fixed magnetic field generated by the above static magnetic circuit, so that the magnetic field distribution of the surface space of the target 29 becomes controllable. The inner ring permanent magnet 25 and the middle ring permanent magnet 26 are independently rotated and can be combined into a plurality of rotating magnetic field schemes to bring about significant magnetic field changes. The positions of the inner ring permanent magnet 25 and the middle ring permanent magnet 26 with respect to the outer ring permanent magnet 27 are adjustable, and can also be combined into a plurality of rotating magnetic field schemes to bring about significant magnetic field changes. Preferably, the inner ring permanent magnet 25 is positioned higher than the middle ring permanent magnet 26, the distal end of the middle ring permanent magnet 26 is close to the outer circumference of the target 29, and the proximal end of the inner ring permanent magnet 25 is close to the inner circumference of the target 29. It is more conducive to controlling the distribution of the magnetic field in space. According to actual needs, at a certain moment, the magnetic lines of magnetic field excited by the positional relationship between the biased inner ring permanent magnet 25 and the middle ring permanent magnet 26 are magnetic lines of force 42 and magnetic lines of force 43 respectively, so that the surface of the target 29 is below the surface. The horizontal component of the magnetic field near the outer circumference 31 of the target is high, the plasma density near the outer circumference 31 of the target is increased, and the etching becomes strong; while the inner ring permanent magnet 25 and the outer ring permanent magnet 26 are opposed in the opposite direction. The positional relationship between the excitation magnetic fields generates magnetic lines of force which are magnetic lines 44, 45, 46 such that the horizontal component of the magnetic field near the surface of the target 29 near the inner circumference 35 of the target is higher, and the plasma density near the inner circumference 35 of the target is increased. The etching becomes strong, so that if the relative positional relationship between the inner ring permanent magnet 25 and the middle ring permanent magnet 26 remains unchanged during one discharge time, the inner ring driving mechanism and the middle ring driving mechanism drive the respective rotating integer times. Then, both the inner ring and the outer ring of the target 29 will be etched, and the utilization rate of the target 29 is significantly higher than that of the static magnetic field. Meanwhile, the DVD disc substrate 4 is interposed between the two masks 36, 3. The uniformity of the sputtered film layer in the region between 9 is also significantly higher than that in the static magnetic field. When changing internal gear motor 9 and middle gear When the rotation speed and the rotation direction of the motor 13 are 3, the plasma above the surface of the target 29 moves back and forth between the inner ring and the outer ring of the target, so that good film thickness uniformity is obtained, and back sputtering can be avoided. The phenomenon occurs.

Sputtering generally occurs under vacuum conditions of E-3 mbar, which is also referred to as cathode sputtering. In the magnetron sputtering cathode 1 of the present invention, the target 29, the cooling plate 28, the yoke 16 and the pole piece 15 are negative electrodes. The base 6, the bracket 7, the center rod 12, the large photomask 3, the small photomask 5 and the driving mechanism are positive electrodes, and the insulating ring and the insulating plate are added to ensure electrical insulation between the positive and negative components, in one splash In the shot, about 98% of the energy is in the form of heat, which must be taken away in time to ensure the normal operation of the magnetron sputtering cathode 1 of the present invention. The structure capable of cooling the magnetron sputtering cathode 1 of the present invention comprises three circuits, namely a target 29 cooling circuit, a small photomask 5 cooling circuit and a base 6 cooling circuit. In sputtering,

The target 29 atoms are deposited on the large and small photomasks 3 and 5 in addition to the DVD disc substrate 4. The kinetic energy of these deposited targets 29 atoms is finally converted into heat energy, resulting in large and small The temperature of the photomasks 3, 5 is raised, the base 6 is in contact with the large photomask 3, and the heat of the large photomask 3 is guided away by the cooling water in the base 6. The central cooling rod 12 is in contact with the small photomask, and the heat of the small photomask 5 is guided away by the cooling water in the central cooling rod 12, the cooling plate 28 is in contact with the target 29, and the heat of the target 29 is absorbed by the cooling plate 28. The cooling water is led away.

The magnetic circuit mechanism of the present invention and the magnetron sputtering cathode 1 having the magnetic circuit mechanism have two sets of independently rotating and driven bias inner ring permanent magnets 25 and middle ring permanent magnets 26 added to the conventional outer ring permanent magnets 27, Thereby, control is formed which can change and distribute the magnetic field generated by the magnetic circuit mechanism, and the above-mentioned independently rotating bias magnet is added to the static magnetic field generated by the outer ring permanent magnet 27 to adjust the magnetic field distribution of the surface space of the target 29. The controllable spatial magnetic field distribution forms different plasma concentrations in different regions above the surface of the target 29, so that the magnetron sputtering cathode 1 of the present invention can be used to selectively sputter different regions of the target to obtain a diameter. The film thickness that changes monotonously in the direction, on the other hand, can effectively improve the uniformity of the thickness of the plated film and improve the utilization of the target 29, and comprehensively improve the sputtering characteristics of the sputtering source, and the structure is simple and convenient to operate. .

The magnetic circuit mechanism of the present invention and the magnetron sputtering cathode 1 having the magnetic circuit mechanism have the shape, the rotational speed and the offset position with respect to the rotation center 30 of the inner ring permanent magnet 25 and the outer ring permanent magnet 26 The specific needs are set, and the technologies covered are well known to those skilled in the art, and will not be described in detail herein.

The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, and the equivalent changes made by the scope of the present invention remain within the scope of the present invention.

Claims

Rights request

A magnetic circuit mechanism comprising: a yoke, a pole piece, a permanent magnet, a central cooling rod and a base, wherein a central cooling rod is connected to the center of the base, and the outer ring permanent magnet is radially distributed Around the central cooling rod, one end of the yoke is connected to the base, and the other end is connected to the outer ring permanent magnet, and the outer ring permanent magnet is connected between the pole piece and the yoke. The yoke iron and the pole piece are negative electrodes, and the central cooling rod and the base are positive poles, and further comprising: a biasing permanent magnet group, wherein the biasing permanent magnet group comprises an inner ring permanent magnet, a middle ring permanent magnet, and a driving mechanism, the inner ring permanent magnet is centrally offset around the central cooling rod, the middle ring permanent magnet is centrally offset around the central cooling rod, and the middle ring permanent magnet is located at the outer ring permanent magnet And between the inner ring permanent magnets, the driving mechanism is connected to the base, and the driving mechanism independently drives the inner ring permanent magnet and the middle ring permanent magnet to rotate around the central cooling rod.

The magnetic circuit mechanism according to claim 1, wherein: the driving mechanism comprises an inner ring driving mechanism and a middle ring driving mechanism, and the inner ring driving mechanism comprises an inner ring gear motor, an inner ring bearing, and an inner ring a gear and an inner ring mounting plate, the inner ring gear motor meshes with the inner ring gear, one end of the inner ring bearing is pivotally connected to the inner ring gear, and the other end is connected to the central cooling rod, the inner ring One end of the mounting plate is coupled to the inner ring gear, and the other end is coupled to the inner ring permanent magnet.

The magnetic circuit mechanism according to claim 2, wherein: the middle ring drive mechanism comprises a middle ring gear motor, a middle ring gear and a middle ring mounting plate, and the middle ring gear is an internal gear, wherein the middle ring gear a ring gear motor meshes with the middle ring gear, the middle ring gear is pivotally connected to the inner ring gear, and one end of the middle ring mounting plate is connected with the middle ring gear, and the other end is connected with the middle ring The magnets are connected.

The magnetic circuit mechanism according to claim 2 or 3, wherein: the two ends of the middle ring mounting plate have a small gap between the yoke and the inner ring mounting plate.

The magnetic circuit mechanism according to claim 1, wherein the inner ring permanent magnet and the middle ring permanent magnet are distributed around the central cooling rod in a circular or elliptical center.

The magnetic circuit mechanism according to claim 1, wherein the base is a hollow structure.

The magnetic circuit mechanism according to claim 1, wherein: said inner ring permanent magnet is higher than said intermediate ring permanent magnet.

8. A magnetron sputtering cathode adapted to be mounted on a vacuum chamber in a vacuum coating apparatus, the magnetron sputtering cathode comprising a magnetic circuit mechanism, a cooling mechanism, a sealing mechanism and an insulating mechanism, the magnetic circuit mechanism comprising a yoke, a pole piece, a permanent magnet, a central cooling rod and a base, the central cooling rod is connected to the center of the base, and the outer ring permanent magnet or the like is radially distributed around the central cooling rod. One end of the yoke is connected to the base, and the other end is connected to the outer ring permanent magnet, the outer ring permanent magnet is connected between the pole piece and the yoke, and the yoke and the pole piece are negative The central cooling rod and the base are positive poles, the cooling mechanism is located between the central cooling rod and the yoke, the cooling mechanism cools the magnetic circuit mechanism, and the sealing mechanism is located at the magnetic circuit mechanism Between the cooling mechanisms, the sealing mechanism seals the cooling mechanism and the magnetic circuit mechanism, and the insulating mechanism is insulated from the positive and negative poles in the magnetic circuit mechanism, and is characterized in that: a magnet group, the bias permanent magnet group includes an inner ring permanent magnet, a middle ring permanent magnet, and a driving mechanism, wherein the inner ring permanent magnet is centrally offset around the central cooling rod, and the middle ring permanent magnet is centered Offset around the central cooling rod, and the middle ring permanent magnet is located between the outer ring permanent magnet and the inner ring permanent magnet, the driving mechanism is connected to the base, and the driving mechanism independently drives the The inner ring permanent magnet and the middle ring permanent magnet rotate around the central cooling rod.

The magnetron sputtering cathode according to claim 8, wherein: the driving mechanism comprises an inner ring driving mechanism and a middle ring driving mechanism, and the inner ring driving mechanism comprises an inner ring gear motor, an inner ring bearing, An inner ring gear and an inner ring mounting plate, the inner ring gear motor meshes with the inner ring gear, one end of the inner ring bearing is pivotally connected to the inner ring gear, and the other end is connected to the central cooling rod, Inner ring mounting plate One end is connected to the inner ring gear, and the other end is connected to the inner ring permanent magnet.

The magnetron sputtering cathode according to claim 8, wherein: the middle ring driving mechanism comprises a middle ring gear motor, a middle ring gear and a middle ring mounting plate, and the middle ring gear is an internal gear. The middle ring gear motor meshes with the middle ring gear, the middle ring gear is pivotally connected to the inner ring gear, and one end of the middle ring mounting plate is connected with the middle ring gear, and the other end is connected to the middle Ring permanent magnet connection.

The magnetron sputtering cathode according to claim 8, wherein: the two ends of the middle ring mounting plate have a small gap between the yoke and the inner ring mounting plate.

The magnetron sputtering cathode according to claim 8, wherein the inner ring permanent magnet and the middle ring permanent magnet are distributed around the center cooling rod in a circular or elliptical center.

The magnetron sputtering cathode according to claim 8, wherein the base is a hollow structure.

The magnetron sputtering cathode according to claim 8, wherein: the inner ring permanent magnet is higher than the middle ring permanent magnet.

The magnetron sputtering cathode according to claim 8, wherein the cooling mechanism is a hollow cooling plate, and the cooling plate is located at an inner ring permanent magnet and a middle ring permanent magnet between the central cooling rod and the yoke Below it.

16. The magnetron sputtering cathode of claim 15 wherein the lower end of the yoke extends below the cooling plate.

The magnetron sputtering cathode according to claim 15, wherein: the inner ring permanent magnet and the middle ring permanent magnet are located above the cooling plate, and the inner ring permanent magnet is opposite to the middle ring permanent magnet The position of the permanent magnet on the outer ring is adjustable.

The magnetron sputtering cathode according to claim 15, wherein: the cooling plate is a negative electrode, and an insulating sleeve is disposed between the cooling plate and the central cooling rod, and the insulating sleeve is sleeved at the center Above the cooling rod.

19. A method of manufacturing a magnetron sputtering cathode, comprising the steps of:

(1) forming a magnetic circuit mechanism for generating a static magnetic field, a yoke connected to the base by the base, a pole piece, a central cooling rod, and an outer ring permanent magnet radially distributed outside the central cooling rod;

(2) forming a cooling mechanism for cooling the magnetic circuit mechanism;

(3) forming a sealing mechanism for sealing the magnetic circuit mechanism, the sealing mechanism sealing the cooling mechanism and the magnetic circuit mechanism to each other;

(4) forming an insulating mechanism for insulating the positive and negative electrodes in the magnetic circuit mechanism;

(5) forming, on the magnetic circuit mechanism, a middle ring permanent magnet and an inner ring permanent magnet for generating a dynamic magnetic field, wherein the outer ring permanent magnets are sequentially inwardly centered on the central cooling rod and are centrally offset. A set of biasing permanent magnets that are independently driven by a drive mechanism.

The magnetron sputtering cathode manufacturing method according to claim 19, wherein: the driving mechanism comprises an inner ring driving mechanism and a middle ring driving mechanism, and the inner ring driving mechanism comprises an inner ring gear motor and an inner ring. a bearing, an inner ring gear and an inner ring mounting plate, wherein the inner ring gear motor meshes with the inner ring gear, the inner ring bearing is pivotally connected to the inner ring gear, and the other end is connected to the central cooling rod, One end of the inner ring mounting plate is connected to the inner ring gear, and the other end is connected to the inner ring permanent magnet.

The magnetron sputtering cathode manufacturing method according to claim 19, wherein: the middle ring driving mechanism comprises a middle ring gear motor, a middle ring gear and a middle ring mounting plate, and the middle ring gear is an internal gear The middle ring gear motor meshes with the middle ring gear, the middle ring gear is pivotally connected to the inner ring gear, and one end of the middle ring mounting plate is connected with the middle ring gear, and the other end is The middle ring permanent magnets are connected.

The magnetron sputtering cathode manufacturing method according to claim 19, wherein: the middle ring There is a small gap between the two ends of the mounting plate and the yoke and the inner ring mounting plate.

The magnetron sputtering cathode manufacturing method according to claim 19, wherein the inner ring permanent magnet and the middle ring permanent magnet are distributed around the center cooling rod in a circular or elliptical center.

The method of manufacturing a magnetron sputtering cathode according to claim 19, wherein the base is a hollow structure.

The magnetron sputtering cathode manufacturing method according to claim 19, wherein the inner ring permanent magnet is higher than the middle ring permanent magnet.

The magnetron sputtering cathode manufacturing method according to claim 25, wherein the cooling mechanism is a hollow cooling plate, and the cooling plate is located at an inner ring permanent magnet and a middle ring between the central cooling rod and the yoke Below the permanent magnet.