WO2010035143A2 - 트랜지스터, 이를 구비한 이미지 센서 및 그의 제조방법 - Google Patents

트랜지스터, 이를 구비한 이미지 센서 및 그의 제조방법 Download PDF

Info

Publication number
WO2010035143A2
WO2010035143A2 PCT/IB2009/007308 IB2009007308W WO2010035143A2 WO 2010035143 A2 WO2010035143 A2 WO 2010035143A2 IB 2009007308 W IB2009007308 W IB 2009007308W WO 2010035143 A2 WO2010035143 A2 WO 2010035143A2
Authority
WO
WIPO (PCT)
Prior art keywords
same
transistor
gate electrode
image sensor
manufacturing
Prior art date
Application number
PCT/IB2009/007308
Other languages
English (en)
French (fr)
Other versions
WO2010035143A3 (ko
Inventor
하만륜
Original Assignee
크로스텍 캐피탈 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 크로스텍 캐피탈 엘엘씨 filed Critical 크로스텍 캐피탈 엘엘씨
Priority to US13/056,310 priority Critical patent/US8829577B2/en
Priority to CN2009801380861A priority patent/CN102165590A/zh
Priority to JP2011528455A priority patent/JP5629687B2/ja
Priority to EP09812458.9A priority patent/EP2333835B1/en
Publication of WO2010035143A2 publication Critical patent/WO2010035143A2/ko
Publication of WO2010035143A3 publication Critical patent/WO2010035143A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

본 발명은 전압버퍼인 드라이브 트랜지터를 포함하는 이미지 센서에 있어서, 드라이브 트랜지터의 채널에서 2차 전자의 생성을 억제하여 암전류에 기인하여 발생되는 화상 결함을 방지할 수 있는 이미지 센서를 제공하기 위한 것으로, 이를 위해 본 발명은 기판 상에 형성된 게이트 전극과, 상기 게이트 전극의 양측으로 노출된 상기 기판 내에 각각 형성된 소스 및 드레인 영역과, 상기 드레인 영역 상부에 형성되고, 일부가 상기 게이트 전극과 중첩된 전기장 완화영역을 포함하는 트랜지터를 제공한다.
PCT/IB2009/007308 2008-09-29 2009-09-29 트랜지스터, 이를 구비한 이미지 센서 및 그의 제조방법 WO2010035143A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/056,310 US8829577B2 (en) 2008-09-29 2009-09-29 Transistor, image sensor with the same, and method of manufacturing the same
CN2009801380861A CN102165590A (zh) 2008-09-29 2009-09-29 晶体管、具有晶体管的图像传感器及其制造方法
JP2011528455A JP5629687B2 (ja) 2008-09-29 2009-09-29 トランジスタ、トランジスタを備えた画像センサ、画像センサの製造方法
EP09812458.9A EP2333835B1 (en) 2008-09-29 2009-09-29 Image sensor and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0095461 2008-09-29
KR1020080095461A KR20100036033A (ko) 2008-09-29 2008-09-29 트랜지스터, 이를 구비한 이미지 센서 및 그의 제조방법

Publications (2)

Publication Number Publication Date
WO2010035143A2 true WO2010035143A2 (ko) 2010-04-01
WO2010035143A3 WO2010035143A3 (ko) 2010-10-14

Family

ID=41822442

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2009/007308 WO2010035143A2 (ko) 2008-09-29 2009-09-29 트랜지스터, 이를 구비한 이미지 센서 및 그의 제조방법

Country Status (6)

Country Link
US (1) US8829577B2 (ko)
EP (1) EP2333835B1 (ko)
JP (1) JP5629687B2 (ko)
KR (1) KR20100036033A (ko)
CN (1) CN102165590A (ko)
WO (1) WO2010035143A2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018125518A (ja) * 2017-02-03 2018-08-09 ソニーセミコンダクタソリューションズ株式会社 トランジスタ、製造方法
WO2018190166A1 (en) * 2017-04-11 2018-10-18 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic apparatus
TWI826491B (zh) * 2018-07-30 2023-12-21 日商索尼半導體解決方案公司 固體攝像裝置及電子機器
CN110676278B (zh) * 2019-11-11 2022-04-26 锐芯微电子股份有限公司 时间延迟积分的cmos图像传感器及其形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02250331A (ja) * 1989-03-24 1990-10-08 Hitachi Ltd 半導体装置およびその製造方法
JPH04269836A (ja) * 1991-02-25 1992-09-25 Sony Corp ｎチャンネルＭＩＳ半導体装置
KR970011744B1 (ko) * 1992-11-04 1997-07-15 마쯔시다덴기산교 가부시기가이샤 상보형 반도체장치 및 그 제조방법
KR100189964B1 (ko) * 1994-05-16 1999-06-01 윤종용 고전압 트랜지스터 및 그 제조방법
US6353245B1 (en) * 1998-04-09 2002-03-05 Texas Instruments Incorporated Body-tied-to-source partially depleted SOI MOSFET
KR101000600B1 (ko) * 2003-04-30 2010-12-10 크로스텍 캐피탈, 엘엘씨 이온주입의 시트저항 측정용 테스트패턴 및 그가 내장된씨모스 이미지 센서 및 그의 제조 방법
KR100523671B1 (ko) * 2003-04-30 2005-10-24 매그나칩 반도체 유한회사 이중 게이트절연막을 구비하는 씨모스 이미지 센서 및그의 제조 방법
US7214575B2 (en) * 2004-01-06 2007-05-08 Micron Technology, Inc. Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors
US20060040450A1 (en) * 2004-08-20 2006-02-23 Sharp Laboratories Of America, Inc. Source/drain structure for high performance sub 0.1 micron transistors
JP2006093520A (ja) * 2004-09-27 2006-04-06 Nikon Corp イオン注入方法、並びに、これを用いた電界効果トランジスタの製造方法及び固体撮像素子の製造方法
KR100690169B1 (ko) * 2005-10-25 2007-03-08 매그나칩 반도체 유한회사 시모스 이미지센서
KR100757654B1 (ko) * 2006-05-26 2007-09-10 매그나칩 반도체 유한회사 시모스 이미지 센서 및 그 제조 방법
JP2011085659A (ja) * 2009-09-15 2011-04-28 Ricoh Co Ltd 定着装置、画像形成装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None

Also Published As

Publication number Publication date
US20110210381A1 (en) 2011-09-01
JP5629687B2 (ja) 2014-11-26
EP2333835A2 (en) 2011-06-15
EP2333835B1 (en) 2014-10-15
WO2010035143A3 (ko) 2010-10-14
JP2012504332A (ja) 2012-02-16
CN102165590A (zh) 2011-08-24
KR20100036033A (ko) 2010-04-07
US8829577B2 (en) 2014-09-09

Similar Documents

Publication Publication Date Title
SG155151A1 (en) Integrated circuit system for suppressing short channel effects
JP2011119690A5 (ko)
TW200733398A (en) Semiconductor device and manufacturing method thereof
TW201232785A (en) Semiconductor device and method for manufacturing semiconductor device
WO2009105466A3 (en) Reduced leakage current field-effect transistor having asymmetric doping and fabrication method therefor
WO2012082329A3 (en) Tunnel field effect transistor
WO2013049463A3 (en) Double gate ion sensitive field effect transistor
TW200644224A (en) Semiconductor device and method for manufacturing the same
TWI370312B (ko)
TW201613105A (en) Semiconductor device and manufacturing method thereof
WO2010002803A3 (en) Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors
JP2010114432A5 (ja) 半導体装置の作製方法
GB201212740D0 (en) Fabrication of a vertical heterojunction tunnel-fet
WO2012119125A3 (en) High performance graphene transistors and fabrication processes thereof
JP2011103458A5 (ko)
WO2010120423A3 (en) Field effect transistor having a plurality of field plates
TW200802884A (en) Thin film transistor, method for fabricating the same and display device
WO2008099528A1 (ja) 表示装置、表示装置の製造方法
TW200742141A (en) Organic transistor and method for manufacturing the same
GB2509852A (en) Organic thin film transistors and method of making them
TW201130134A (en) High-voltage transistor structure with reduced gate capacitance
WO2010035143A3 (ko) 트랜지스터, 이를 구비한 이미지 센서 및 그의 제조방법
WO2009058695A3 (en) Cool impact-ionization transistor and method for making same
SG164319A1 (en) High voltage device
WO2011084975A3 (en) A body-tied asymmetric n-type field effect transistor

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980138086.1

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2009812458

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2011528455

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 13056310

Country of ref document: US