WO2010024442A1 - 回路基板、画像形成装置、サーマルヘッドおよびイメージセンサ - Google Patents
回路基板、画像形成装置、サーマルヘッドおよびイメージセンサ Download PDFInfo
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- WO2010024442A1 WO2010024442A1 PCT/JP2009/065225 JP2009065225W WO2010024442A1 WO 2010024442 A1 WO2010024442 A1 WO 2010024442A1 JP 2009065225 W JP2009065225 W JP 2009065225W WO 2010024442 A1 WO2010024442 A1 WO 2010024442A1
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- Prior art keywords
- light emitting
- conductor
- emitting element
- circuit board
- wire
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
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- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
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Definitions
- the present invention relates to a circuit board and an image forming apparatus, a thermal head, and an image sensor using the circuit board.
- an object of the present invention is to provide a circuit board having high electrical connection reliability even when the apparatus is downsized, and an image forming apparatus, a thermal head, and an image sensor using the circuit board.
- a circuit board includes a board, a conductor, and a wire.
- the conductor is located on the substrate and has a groove on the surface.
- the wire is connected to the conductor.
- the groove portion surrounds a connection portion between the wire and the conductor except for a part of the opening.
- An image forming apparatus includes the circuit board and a first drive circuit.
- a thermal head includes the circuit board and a second drive circuit.
- An image sensor includes the circuit board and an arithmetic circuit.
- the connection reliability is improved and the life of the device can be extended.
- FIG. 2 is a cross-sectional view showing a mounting body in which the light emitting device of FIGS. 1A to 1C is mounted on a printed board. It is sectional drawing which shows the process of stitch-bonding a wire to a conductor. It is a perspective view which shows the connection structure of a conductor and a wire. It is a perspective view which shows the connection structure of a conductor and a wire.
- FIG. 8 is a cross-sectional view of the circuit board (light emitting device) as viewed from the section line IV-IV in FIG. 7.
- FIG. 8 is a cross-sectional view of a circuit board (light emitting device) as seen from a section line VV in FIG. 7.
- FIG. 1 is a side view showing an image forming apparatus according to an embodiment of the present invention. It is sectional drawing which shows the thermal head which concerns on embodiment of this invention. It is sectional drawing which shows the image sensor which concerns on embodiment of this invention.
- the circuit board includes a conductor 105 located on the board and a wire 107 bonded to the conductor 105.
- the conductor 105 has the groove part 108 in the surface.
- the groove 108 is formed by pressing the capillary against the conductor 105 when connecting the wire 107 to the conductor 105.
- the groove portion 108 surrounds the connecting portion 107a (the portion indicated by oblique lines) between the wire 107 and the conductor 105 except for some openings X.
- “the groove portion surrounds” means that the groove portion 108 is surrounded by the outer edge portion 108b and the opening X as shown in FIG. 4C.
- the inner region and the outer region of the groove 108 are continuous.
- region means the area
- FIG. 4B shows a connection structure between the conductor 105 and the wire 107, which is different from the connection structure shown in FIG. 4A.
- the conductor 105 is provided on a pedestal having an upper surface and side surfaces.
- the conductor 105 includes a pad portion 105a located on the upper surface of the pedestal portion, and a side wiring portion 105b located on the side surface of the pedestal portion and electrically connected to the pad portion 105a. Yes.
- the opening X is located in the boundary part of the pad part 105a and the side surface wiring part 105b.
- FIGS. 4A to 4C are schematic perspective views showing a connection structure between a conductor and a wire.
- FIG. 4A is a configuration not included in the embodiment of the present invention
- FIGS. 4B and 4C are diagrams illustrating the implementation of the present invention. The structure contained in a form is shown. In the drawing showing the groove portion 108, the width of the groove portion 108 is shown large for easy understanding of the connecting portion 107a, and it is not described based on actual dimensions.
- the conductor 205 and the wire 107 form a connection portion 107a, and the groove portion 208 generated during wire bonding such as stitch bonding remains on the pad portion 205a.
- the connecting portion 107a exists in a region surrounded by the groove 208. However, for reasons described later, when the circuit board is downsized, the region surrounded by the groove 208 may be separated from the conductor 205. If it is divided, the connecting portion 107a is barely connected by the adhesive force of the narrow region surrounded by the groove 208, and the connecting portion 107a may be peeled off from the substrate.
- the pad portion 105a and the wire 107 form the connecting portion 107a, and the groove portion 108 generated during wire bonding exists on the pad portion 105a.
- the pad portion 105a and the side wiring portion 105b provided on the pedestal portion are connected, and a part of the groove portion 108 is a boundary between the side wiring portion 105b on the pad portion 105a side.
- the groove 108 is interrupted to form the opening X).
- the region of the pad portion 105a in which the connection portion 107a is provided is connected not only to the region surrounded by the groove portion 108 but also to the side wiring portion 105b provided in connection with this region. Therefore, even if the groove portion 108 is divided on the pad portion 105a, it is not completely separated from the surroundings and is connected to the side wiring portion 105b, which is better than the configuration shown in FIG. 4A. Can achieve a good adhesion.
- a good adhesive force between the wire 107 and the conductor 105 can be obtained as in the case of FIG. 4B. That is, in FIG. 4C, the groove part 108 is formed on the surface of the conductor 105, and a part of the groove part 108 is cut off (the groove part 108 is interrupted to form the opening X). According to this configuration, the inner region surrounded by the groove portion 108 provided with the connecting portion 107 a is connected to the outer region of the groove portion 108 through the opening X.
- connection strength between the wire 107 and the conductor 105 connected by stitch bonding or the like is as follows: (i) the strength of the boundary between the wire 107 and the conductor 105 to be joined; and (ii) the conductor 105 and the substrate. Determined by adhesion strength. If the area of the conductor 105 is reduced in order to reduce the size of the circuit board, the diameter of the wire 107 is reduced according to this size, or the tip diameter of the capillary used for connecting the wire 107 and the conductor 105 is reduced. Since it is necessary, the strength of the above (i) tends to decrease.
- a countermeasure is generally used by improving the intermetallic bond between the wire 107 and the conductor 105 by strongly crushing the wire 107 on the conductor 105.
- the stress applied to the tip is increased, and the thickness of the conductor 105 is reduced. It tends to be thinner at the site.
- the conductor 105 is thus thinned, the inner region surrounded by the groove 108 and the surrounding region are likely to be divided. Then, the conductor 105 in the inner region of the groove 108 can be in close contact with the substrate only in a small area of the inner region, and the possibility that the region inside the groove 108 peels from the substrate increases.
- the region inside the groove 108 on the conductor 105 is connected to the region outside the groove 108 through the opening X, so that the connecting portion 107a is The conductor 105 inside the formed groove 108 is reinforced, and good adhesion can be obtained.
- the substrate or the capillary is inclined. Can be formed. Alternatively, the shape of a part of the tip of the capillary may be deformed so that the part of the tip does not contact the conductor 105.
- a pedestal portion having an upper surface and a side surface is provided on the surface of the substrate, a pad portion 105a is formed on the upper surface of the pedestal portion, and a side wiring portion 105b is formed on the side surface of the pedestal portion.
- the conductor 105 is preferably formed into a bent flat plate shape including the pad portion 105a and the side wiring portion 105b.
- the groove 108 is formed so that the opening X is formed in a part of the region only by connecting so that a part of the tip of the capillary protrudes from the pad part 105a without tilting the substrate or the capillary. It can be formed easily.
- the adhesion force of the wire 107 to the conductor 105 can be further increased. That is, conventionally, it has been necessary to select a capillary having a sufficiently small tip diameter so that the groove portion remains stably in the pad portion. However, the configuration shown in FIG. Since it is possible to manufacture using a capillary having a larger tip diameter than before, the size of the boundary between the wire 107 where the wire 107 is crushed and the wire can be increased, and the adhesion can be further increased. .
- FIGS. 4B and 4C showing the connection structure between the conductor and the wire in the circuit board according to the embodiment of the present invention, it is possible to make it difficult to peel the wire 107 from the conductor 105. And the life of the device can be extended.
- a circuit board according to a first embodiment of the present invention will be described based on an embodiment including a driving unit such as a light emitting element.
- the light emitting device shown in FIG. 1A includes a light emitting element 103 as a driving unit and a pedestal 102 on a substrate 101.
- the substrate 101 is often formed using the same type of semiconductor as the light-emitting element 103.
- the light emitting element 103 include semiconductor light emitting elements such as light emitting diodes and light emitting thyristors.
- the light emitting element 103 is provided with an electrode 109 for applying a light emission signal.
- the light-emitting element is formed by stacking n-type and p-type semiconductor layers, and a detailed configuration thereof will be described later.
- the pedestal portion 102 is formed at a position different from the light emitting element 103 on the surface of the substrate 101.
- the shape of the pedestal portion is a truncated pyramid having an upper surface and a side surface, and the conductor 105 is connected from the upper surface to the side surface.
- a portion located on the upper surface of the pedestal portion 102 is referred to as a pad portion 105a, and a portion located on the side surface of the pedestal portion 102 is referred to as a side wiring portion 105b.
- a wire 107 made of Au or the like is connected to the pad portion 105a.
- the other end of the wire 107 (the end of the wire 107 not connected to the pad 105a) is connected to an external drive circuit. This drive circuit drives the light emitting element 103 to emit light.
- the pedestal 102 is preferably formed with the same semiconductor layer structure as that of the light emitting element 103 because it is simple. However, in this case, since the pedestal portion 102 has conductivity and is electrically connected to the conductor 105, the first insulating layer 104 is provided on the pedestal portion 102, and the conductor 105 is provided thereon. Although the detailed configuration is omitted in the drawing, the conductor 105 is electrically connected to the electrode 109 that applies a signal for light emission to the light emitting element 103, and emits light to the wire 107 from an external drive circuit. When a signal is applied, the light emitting element 103 is transmitted.
- the second insulating layer 106 is provided so as to cover at least the outer peripheral portion of the conductor 105 and the electrode 109 of the light emitting element 103. Since the second insulating layer 106 is provided, moisture can be prevented from entering and peeling from the interface of the outer peripheral portion of the electrode, so that reliability can be improved.
- the first insulating layer 104 and the second insulating layer 106 are formed of a dielectric film such as SiN or SiO 2 or a resin material such as polyimide.
- the pad portion 105a and the wire 107 form a connection portion 107a. Then, a part of the groove portion 108 generated at the time of connection is chipped at the boundary with the side wiring portion 105b on the pad portion 105a side, and an opening X is formed. According to this configuration, the region of the pad portion 105a where the connection portion 107a is provided is connected not only to the region surrounded by the groove portion 108 but also to the side wiring portion 105b provided continuously in this region. .
- the side constituting the pad portion 105a corresponds to the boundary portion with the side wiring portion 105b.
- the side wiring part 105b may be provided on any of the sides constituting the pad part 105a, but is preferably provided on the side closest to the light emitting element 103 than the other sides.
- the groove portion 108 is in contact with the boundary portion on the surface of the pad portion 105 a and near the light emitting element 103. In other words, the light emitting element 103 is provided in a shifted manner.
- the pedestal portions 102 (pad portions 105a) can be arranged close to each other, so that the number of pedestal portions (pad portions) can be increased, and the size of the light emitting device is reduced in the main scanning direction.
- a light-emitting device with high resolution can be manufactured.
- FIG. 2 is a schematic cross-sectional view showing a mounting body in which the light emitting device shown in FIGS. 1A to 1C is mounted on a printed circuit board 110.
- FIG. 3 shows a stitch bond of the wire 107 to the conductor 105 (pad portion 105a). It is sectional drawing which shows the process to do.
- a light emitting device according to the first embodiment of the present invention described in FIGS. 1A to 1B and a driving circuit such as an IC 111 are provided on a printed circuit board 110, and electrodes 112 And the wire 107 are connected.
- the electrode 112 is connected as a drive circuit
- the wire 107 may be directly provided on a wiring pad such as copper provided on a printed board.
- the drive circuit may be configured on the circuit board according to the embodiment of the present invention.
- the wire 107 is connected to the electrode 112 of the IC 111 of the printed circuit board 110 in the first step (first bond), and is connected to the conductor 105 (pad portion 105a) on the light emitting element side in the next step (second bond). ). Specifically, the following steps are performed.
- the capillary 113 is moved to the conductor 105.
- the wire 107 may be habited by moving the capillary 113 along a special locus.
- the capillary 113 descends again and presses the wire 107 onto the pad portion 105a. At this time, heat, a load, and an ultrasonic wave are applied to deform the wire 107 to form a stitch bond for bonding the wire 107 on the target and a tail bond for securing the tail in the next step.
- the tail means a tip portion of the capillary 113 that is located on the opposite side of the ball-shaped portion.
- FIG. 3 shows a state where the capillary 113 is lowered in this step.
- the capillary 113 in this step, when the capillary 113 is pressed against the pad portion 105a, the capillary 113 is formed by being shifted to the side wiring portion 105b so that the tip of the capillary 113 is pressed onto the pad portion 105a.
- the shape of the mark is missing at the boundary with the side wiring part 105b.
- the capillary 113 ascends while leaving the wire 107, and after securing a tail of a certain length at the tip of the capillary 113, the wire clamp is closed and the wire 107 is grasped, and the wire is removed from the tail bond portion. I tear 107 off. At this time, since the tail bond temporarily holds the wire, the wire 107 does not rise together with the capillary 113.
- FIG. 5 is a cross-sectional view showing a circuit board (light-emitting device 1) according to the second embodiment of the present invention.
- FIG. 6 is a cross-sectional view showing the light emitting device 1.
- the configuration is basically the same as that described with reference to FIGS. 1A to 1C, but in order to explain the configuration of the element itself in detail, the wires and the second insulating layer in FIGS. 1A to 1C are omitted.
- FIG. 5 is a cross-sectional view of the light-emitting device 1 on a plane that cuts a later-described gate base 34 and the light-emitting element body 11.
- FIG. 6 is a cross-sectional view of a surface for cutting a cathode pedestal portion 22 to be described later.
- the light emitting device 1 includes a substrate 2, a light emitting element 3, a pedestal portion 4, a gate wiring 5, an anode wiring 6, a cathode wiring 7, and a conductor 8. including.
- FIGS. 1A to 1C the detailed configuration connecting the conductor and the electrode of the light emitting element is omitted, but in FIGS. 5 and 6, the gate wiring 5, the anode wiring 6, the cathode wiring 7, and the like are shown.
- the conductor 8 and the electrode of the light emitting element 3 are electrically connected to each other.
- the substrate 2 is plate-shaped and made of an n-type semiconductor.
- the light-emitting element 3 is formed on one surface 2a of the substrate 2 in the thickness direction Z (hereinafter referred to as the thickness direction Z) near one end X1 in the width direction X (hereinafter referred to as the width direction X) of the substrate 2.
- the light emitting element 3 includes a light emitting thyristor having a pnpn structure.
- the light emitting element 3 includes the light emitting element body 11, the first electrode 12, the second electrode 13, and a part of the insulating layer 15 formed to overlap the light emitting element body 11.
- the light emitting element 3 emits light by applying a potential difference exceeding the threshold voltage between the anode and the cathode. The threshold voltage changes according to the voltage applied to the gate.
- the light emitting element body 11 includes a first n-type semiconductor layer 16, a first p-type semiconductor layer 17, a second n-type semiconductor layer 18, a second p-type semiconductor layer 19, and an ohmic contact layer 20. Are stacked in this order on one surface 2a of the substrate 2 in the thickness direction Z.
- the light emitting element body 11 is formed such that side surfaces gather from the substrate 2 toward one side Z1 in the thickness direction Z.
- the substrate 2 examples include semiconductor substrates capable of crystal growth such as III-V compound semiconductors and IV group semiconductors.
- semiconductor substrates capable of crystal growth such as III-V compound semiconductors and IV group semiconductors.
- gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), silicon ( Semiconductor materials such as Si) or Germanium (Ge) can be mentioned.
- the first n-type semiconductor layer 16 is formed of a semiconductor material such as gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), or indium gallium phosphide (InGaP).
- the carrier density of the first n-type semiconductor layer 16 is desirably about 1 ⁇ 10 18 cm ⁇ 3 .
- the first p-type semiconductor layer 17 is formed of a semiconductor material such as aluminum gallium arsenide (AlGaAs) or gallium arsenide (GaAs).
- the semiconductor material for forming the first p-type semiconductor layer 17 has the same energy gap as that of the semiconductor material for forming the first n-type semiconductor layer 16 or the first n-type semiconductor layer 16. Those having an energy gap smaller than the energy gap of the semiconductor material forming the are selected.
- the carrier density of the first p-type semiconductor layer 17 is desirably about 1 ⁇ 10 17 cm ⁇ 3 .
- the second n-type semiconductor layer 18 is formed of a semiconductor material such as aluminum gallium arsenide (AlGaAs) or gallium arsenide (GaAs).
- the semiconductor material that forms the second n-type semiconductor layer 18 has the same energy gap as that of the semiconductor material that forms the first p-type semiconductor layer 17, or the first p-type semiconductor layer 17. Those having an energy gap smaller than the energy gap of the semiconductor material forming the are selected.
- the carrier density of the second n-type semiconductor layer 18 is such that the first n-type semiconductor layer 16, the first p-type semiconductor layer 17, the second n-type semiconductor layer 18, and the second p-type semiconductor layer 19 are all present.
- the second n-type semiconductor layer 18 is the smallest of the layers, specifically about 1 ⁇ 10 16 cm ⁇ 3 to 1 ⁇ 10 17 cm ⁇ 3 .
- the obtained light emitting element can obtain high internal quantum efficiency.
- the second p-type semiconductor layer 19 is formed of a semiconductor material such as aluminum gallium arsenide (AlGaAs) or gallium arsenide (GaAs).
- the semiconductor material forming the second p-type semiconductor layer 19 has the same energy gap as that of the semiconductor material forming the first p-type semiconductor layer 17 and the second n-type semiconductor layer 18, or A material having an energy gap larger than the energy gap of the semiconductor material forming the first p-type semiconductor layer 17 and the second n-type semiconductor layer 18 is selected.
- the carrier density of the second p-type semiconductor layer 19 is desirably about 1 ⁇ 10 18 cm ⁇ 3 .
- the ohmic contact layer 20 is a p-type semiconductor layer formed of a semiconductor material such as gallium arsenide (GaAs) or indium gallium phosphide (InGaP), and is used for performing an ohmic contact with the first electrode 12.
- the carrier density of the ohmic contact layer 20 is desirably 1 ⁇ 10 19 cm ⁇ 3 or more.
- the light emitting element body 11 has a second electrode connection portion 21 connected to the second electrode 13.
- the second electrode connection portion 21 includes a first n-type semiconductor layer 16 and a portion of the first p-type semiconductor layer 17 near the substrate 2 in the thickness direction Z.
- the first p-type semiconductor layer 17, the second n-type semiconductor layer 18, the second p-type semiconductor layer 19, and the ohmic contact layer 20 are projected to the other X 2 in the width direction X from the stacked portion. Formed.
- the pedestal portion 4 is provided in a region different from the light emitting element 3 on the one surface 2 a of the thickness direction Z of the substrate 2.
- the pedestal portion 4 is formed near the end portion of the other X2 in the width direction X of the substrate 2.
- the pedestal portion 4 includes an anode pedestal portion, a gate pedestal portion 34, and a cathode pedestal portion that are arranged at predetermined intervals in the arrangement direction Y perpendicular to the thickness direction Z and the width direction X. 35 and the third electrode 14.
- the anode pedestal, the gate pedestal 34, and the cathode pedestal 35 are collectively referred to or designated unspecified, they are simply referred to as the pedestal 4.
- the pedestal portion 4 includes a pedestal portion main body 22 and a portion formed by overlapping the pedestal portion main body 22 of the insulating layer 15.
- the pedestal main body 22 is formed, for example, by laminating semiconductor layers having the same thickness as the respective semiconductor layers of the light emitting element main body 11 in FIG. Since the pedestal body 22 has a layer configuration using the same material as the light emitting element body 11, the corresponding layer is given the same name as each semiconductor layer of the light emitting element body 11.
- the pedestal main body 22 includes a first n-type semiconductor layer 24, a first p-type semiconductor layer 25, a second n-type semiconductor layer 26, a second p-type semiconductor layer 27, and an ohmic contact layer 28. Are stacked in this order on one surface 2a of the substrate 2 in the thickness direction Z.
- the pedestal body 22 is formed in a square frustum shape.
- the insulating layer 15 is a component described as the first insulating layer in FIG.
- the insulating layer 15 is formed so as to cover the surface of the light emitting element body 11, the surface of the pedestal body 22, and the surface of the substrate 2 from one side Z ⁇ b> 1 in the thickness direction Z.
- the insulating layer 15 is formed of a resin material having electrical insulating properties, translucency, and flatness.
- the insulating layer 15 is formed of polyimide, benzocyclobutene (BCB), or the like.
- the light emitting element 3 and the pedestal portion 4 are arranged as close as possible in order to realize the miniaturization of the light emitting device 1.
- An interval W1 between the light emitting element 3 and the pedestal portion 4 is, for example, 10 ⁇ m to 200 ⁇ m.
- a first through hole 31 penetrating in the thickness direction Z is formed in a part of the insulating layer 15 stacked on the one surface 20a of the ohmic contact layer 20 of the light emitting element body 11 in the thickness direction Z.
- a second through hole 32 penetrating in the thickness direction Z is formed in a part of the insulating layer 15 stacked on the one surface 21 a of the second electrode connection portion 21 in the thickness direction Z.
- a third penetration penetrating in the thickness direction Z is formed in a part of the insulating layer 15 formed between the cathode pedestal portion 35 and the end portion of the other X2 in the width direction X of the substrate 2.
- a hole 33 is formed.
- the first electrode 12 is formed so as to cover the first through hole 31 from one side Z1 in the thickness direction Z.
- the first electrode 12 corresponds to the anode of the light emitting element 3.
- the second electrode 13 is formed so as to cover the second through hole 32 from one side Z1 in the thickness direction Z.
- the second electrode 13 corresponds to the gate of the light emitting element 3.
- the third electrode 14 shown in FIG. 6 is formed so as to cover the third through hole 33 from one side Z1 in the thickness direction Z.
- the third electrode 14 is electrically connected to the first n-type semiconductor layer 16 through the substrate 2 and corresponds to the cathode of the light emitting element 3.
- the first to third electrodes 12, 13, and 14 are formed of a conductive material such as a metal material and an alloy material.
- a conductor 8 to which one end of the wire is connected is formed on the base portion 4.
- the conductor 8 includes a pad portion 8a and a side wiring portion 8b.
- the pad portion 8 a is disposed on the one surface 4 a of the pedestal portion 4 in the thickness direction Z, that is, the upper surface of the pedestal portion 4, and the side wiring portion 8 b is disposed on the side surface of the pedestal portion 4.
- the light emitting device 1 is electrically connected to other devices through wires.
- the conductor 8 includes an anode conductor formed over the entire surface on the one surface 4a in the thickness direction Z of the anode pedestal portion, and a gate conductor formed over the entire surface on the one surface 4a in the thickness direction Z of the gate pedestal portion 34.
- the gate conductor G and the cathode conductor C formed on the one surface 4a in the thickness direction Z of the cathode pedestal 35 are collectively referred to as unspecified, and the pad portion 8a or the side wiring.
- the components of the portion 8b are collectively referred to without distinction, they are simply referred to as conductors 8.
- the gate wiring 5 is provided between the second electrode 13 and the gate conductor G along the surface of the insulating layer 15.
- the gate conductor G is electrically connected to the second electrode 13 through the gate wiring 5.
- the anode wiring 6 is provided between the first electrode 12 and the anode conductor along the surface of the insulating layer 15.
- the anode conductor is electrically connected to the first electrode 12 via the anode wiring 6.
- the anode wiring 6 is arranged at a predetermined interval from the gate wiring 5 so as not to be short-circuited with the gate wiring 5.
- the cathode wiring 7 is provided between the third electrode 14 and the cathode conductor C along the surface of the insulating layer 15.
- the cathode conductor C is electrically connected to the third electrode 14 via the cathode wiring 7.
- the cathode conductor C and the ground may be connected by a wire.
- the first electrode 12, the second electrode 13, the third electrode 14, the anode wiring 6, the gate wiring 5, the cathode wiring 7, the anode conductor, the gate conductor G, and the cathode conductor C are respectively gold (Au ), An alloy of gold and germanium (AuGe), an alloy of gold and zinc (AuZn), or the like.
- the light emitting element main body 11 and the pedestal main body 22 include first n-type semiconductor layers 16 and 24, first p-type semiconductor layers 17 and 25, second n-type semiconductor layers 18 and 26, and a second p-type semiconductor.
- Semiconductor materials for forming the layers 19 and 27 and the ohmic contact layers 20 and 28 are sequentially stacked on one surface 2a of the substrate 2 by epitaxial growth, chemical vapor deposition (CVD), or the like, and then patterned by photolithography. And by etching. Therefore, the light emitting element main body 11 and the pedestal main body 22 can be simultaneously formed in a series of manufacturing processes. Therefore, the base part main body 22 can be formed without increasing the manufacturing process, and the manufacturing cost can be reduced.
- the insulating layer 15 is formed by spin-coating the above-described resin material such as polyimide, curing the applied resin material, and patterning and etching the first to third through holes 31, 32, and 33 by photolithography. Is done.
- the first to third electrodes 12, 13, 14, the anode wiring 6, the gate wiring 5, the cathode wiring 7, the anode conductor, the gate conductor G, and the cathode conductor C are formed after the insulating layer 15 is formed.
- a conductive material is laminated on the surface of the insulating layer 15 by vapor deposition or the like, and then patterned and etched by photolithography to be simultaneously formed. Therefore, the thicknesses of the first to third electrodes 12, 13, 14, the anode wiring 6, the gate wiring 5, the cathode wiring 7, the anode conductor, the gate conductor G, and the cathode conductor C are substantially equal. .
- the anode conductor, the cathode conductor C, and the gate conductor G are formed at a position farthest from the one surface 2 a of the substrate 2 in the light emitting device 1.
- the anode wiring 6, the gate wiring 5, and the cathode wiring 7 are formed closer to the substrate 2 than the virtual plane 10.
- the height H from the one surface 2a of the substrate 2 between the one surface 3a in the thickness direction Z of the light emitting element 3 and the one surface in the thickness direction Z of the conductor 8 is selected from 2 ⁇ m to 10 ⁇ m, for example.
- the anode conductor, the cathode conductor C, and the gate conductor G are separated from the anode wiring 6, the gate wiring 5, and the cathode wiring 7, so that the conductor and the light emitting element 3 are sufficiently provided.
- the collision between the capillary and the light emitting element 3 can be reduced, and the impact on the light emitting element 3 when the wire is connected can be reduced.
- the order of the n-type semiconductor layer and the p-type semiconductor layer may be reversed in the light-emitting element body 11.
- the distance from the substrate 2 on the one surface in the thickness direction Z of the conductor 8 is equal to the thickness of the light emitting element 3, but the distance from the substrate 2 on the one surface in the thickness direction Z of the conductor 8 is
- the pedestal 4 or the conductor 8 may be formed so as to be larger than the thickness of the light emitting element 3.
- the light emitting element 3 and the pedestal 4 may be arranged separately.
- the distance W1 between the light emitting element 3 and the pedestal portion 4 is, for example, 10 ⁇ m to 200 ⁇ m. To be elected.
- the light emitting device 41 includes a light emitting element array 42, a plurality of pedestals D, a plurality of control signal transmission wirings GH, an anode wiring 6, a gate wiring 5, a cathode wiring 7, and a first insulating layer 43.
- the third insulating layer 44 is a component different from the second insulating layer in FIG.
- the light emitting element array 42 includes n (symbol n is an integer of 2 or more) light emitting element blocks B.
- Each light emitting element block B is configured to include m (symbol m is an integer of 2 or more) light emitting elements T. That is, the light emitting element array 42 includes n ⁇ m light emitting elements T.
- m 4.
- Each light emitting element T is arranged linearly along the arrangement direction Y at a distance from each other near the end of the other X1 in the width direction X on the one surface 2a of the thickness direction Z of the substrate 2.
- Each light emitting element block B is composed of m light emitting elements T in order from one Y1 in the arrangement direction Y.
- a light emitting element block B arranged i (symbol i is an integer not less than 1 and not more than n) in order from one Y1 in the arrangement direction Y is referred to as a light emitting element block Bi.
- the light emitting element T arranged in the j-th order (the symbol j is an integer of 1 or more and m or less) in order from one Y1 in the arrangement direction Y is referred to as the light emitting element Tj.
- the light emitting element T is formed so as to emit light having a wavelength of 600 to 800 nm.
- the light emitting element T has the same configuration as the light-emitting element 3 in the light-emitting device 1 according to the first embodiment described above, the corresponding components are denoted by the same reference numerals.
- the light emitting element T includes the light emitting element body 11, a part of the first insulating layer 43, a part of the third insulating layer 44, the first electrode 12, and the second electrode 13.
- the light emitting element body 11 has the same structure as the light emitting element body 11 in the light emitting device 1 according to the first embodiment described above.
- the first electrode 12 is electrically connected to each other through the anode wiring 6 for each light emitting element block B.
- the light emitting device 41 includes 3 ⁇ n pedestal portions D in the present embodiment.
- the pedestal portions D are linearly arranged in the arrangement direction Y on the one surface 2a of the substrate 2 in the thickness direction Z and closer to one end X2 in the width direction X with a space therebetween. Since the pedestal portion D has the same configuration as the pedestal portion 4 in the light emitting device 1 according to the first embodiment described above, the corresponding components are denoted by the same reference numerals.
- the pedestal portion D includes the pedestal portion main body 22, a part of the first insulating layer 43, a part of the third insulating layer 44, and the third electrode 14. In particular, the pedestal portion main body 22 has the same structure as the pedestal portion main body 22 in the light emitting device 1 according to the first embodiment described above.
- the light emitting element T and the pedestal portion D are arranged close to each other with an interval at which a control signal transmission wiring GH, which will be described later, can be formed in order to reduce the size of the light emitting device 41.
- the distance W2 between the light emitting element T and the pedestal portion D is selected from 10 ⁇ m to 200 ⁇ m, for example.
- the conductor 8 has the same configuration as the conductor 105 in FIG. 1A.
- the dimension W3 in the width direction X of the pad portion 8a is selected from 30 ⁇ m to 120 ⁇ m, for example.
- the dimension W4 in the arrangement direction Y of the pad portion 8a is selected from 30 ⁇ m to 120 ⁇ m, for example.
- a plurality of light emitting elements T are arranged in a line, and a plurality of pedestal portions D are also arranged in a line. Since the pad portion 8a on the pedestal portion D can be arranged close to the light emitting element T, the size of the light emitting device 41 in the width direction X can be reduced.
- anode conductor Ai the conductor 8 arranged in order 3 ⁇ i ⁇ 1 from one Y1 in the arrangement direction Y is referred to as an anode conductor Ai.
- anode conductor Ai the conductor 8 arranged in order 3 ⁇ i ⁇ 1 from one Y1 in the arrangement direction Y.
- the control signal transmission wiring GH is formed between the light emitting element array 42 and the base D.
- the control signal transmission wiring GH is formed along the arrangement direction Y on one surface in the thickness direction Z of the first insulating layer 43 corresponding to the insulating layer 15 of the light emitting device 1 according to the first embodiment.
- the first to fourth control signal transmission lines GH1, GH2, GH3, and GH4 are sequentially connected to the second electrodes 13 of the respective light emitting elements T one by one through the gate line 5.
- the first to fourth control signal transmission lines GH1, GH2, GH3, and GH4 are connected to the second electrodes 13 of the light emitting elements T every four along the light emitting elements T arranged.
- the first control signal transmission line GH1 is electrically connected to the second electrode 13 of the light emitting element T1
- the second control signal transmission line GH2 is electrically connected to the second electrode 13 of the light emitting element T2.
- the third control signal transmission line GH3 is electrically connected to the second electrode 13 of the light emitting element T3
- the fourth control signal transmission line GH4 is electrically connected to the second electrode 13 of the light emitting element T4.
- the first to fourth control signal transmission lines GH1, GH2, GH3, and GH4 are electrically connected to any one of the plurality of conductors 8 via the gate line 5. Thereafter, the conductors 8 electrically connected to the first control signal transmission lines GH1, GH2GH3, and GH4 are used as the first gate conductor G1, the second gate conductor G2, the third gate conductor G3, and the fourth gate, respectively.
- the conductor is G4.
- one of the plurality of pedestal portions D corresponds to the cathode pedestal portion 35 of the light emitting device 1 according to the first embodiment described above.
- the conductor 8 electrically connected to the third electrode 14 through the cathode wiring 7 is referred to as a cathode conductor C.
- the first insulating layer 43 corresponds to the insulating layer 15 in the light emitting device 1 according to the first embodiment described above.
- the third insulating layer 44 covers the surfaces of the first insulating layer 43 and the control signal transmission wiring GH from one side Z1 in the thickness direction Z.
- the gate wiring 5 described above extends in the width direction X along the surface of the third insulating layer 44 and is connected to a predetermined control signal transmission wiring GH.
- a through hole 45 is formed in a portion of the third insulating layer 44 located on the surface to which the gate wiring 5 of the control signal transmission wiring GH is to be connected. A part of the gate wiring 5 is formed in the through hole 45.
- the anode wiring 6 is formed along the surface of the third insulating layer 44.
- the anode wiring 6 extends from the first electrode 12 to the first extending portion 6a provided in one of the thickness directions Z of the second electrode connecting portion 21 in the Z1 direction, and the first extending portion. 6a, the second extending portion 6b connecting the opposite ends of the first electrode 12, and the second extending portion 6b extending in the width direction X from the center in the arrangement direction Y and connected to the anode conductor A And a third extending portion 6c.
- a first through hole 31 penetrating in the thickness direction Z is formed in part of the first insulating layer 43 and the third insulating layer 44. Further, a second through hole 32 penetrating in the thickness direction Z is formed in a part of the first insulating layer 43 and the third insulating layer 44. Further, a third through hole 33 penetrating in the thickness direction Z is formed in part of the first insulating layer 43 and the third insulating layer 44.
- the first electrode 12 corresponds to an anode.
- the second electrode 13 corresponds to a gate.
- the third electrode 14 corresponds to a cathode.
- the light emitting element main body 11 and the pedestal main body 22 are formed through the same process as in the first embodiment.
- the formation method of the first insulating layer 43 and the third insulating layer 44 is as follows. First, after spin-coating the resin material such as polyimide described above, the applied resin material is cured. Then, the first to third through holes 31, 32, 33 are patterned and etched by photolithography, whereby the first insulating layer 43 and the third insulating layer 44 are formed.
- FIG. 10 is a circuit diagram showing an equivalent circuit of the light emitting device 41 shown in FIG.
- the light emitting device 41 further includes a drive unit.
- the drive unit is electrically connected to each anode conductor A and each gate conductor G via wires.
- the cathode conductor C corresponding to the cathode of each light emitting element T is set to the ground potential.
- the driving section gives a select signal ⁇ i to the anode conductor Ai and a control signal ⁇ j to the gate conductor Gj.
- the select signal ⁇ i is supplied to the anodes of the light emitting elements T1, T2, T3, T4 included in the light emitting element block Bj via the anode wiring 6.
- the control signal ⁇ j is given to the gate of each light emitting element Tj through the control signal transmission line GHj.
- the driving unit is realized by a driving driver IC (Integrated Circuit).
- the light emitting element T when the cathode is grounded, a high level high voltage is applied to the anode.
- the light emitting element T emits light when a low level is applied to the gate, and is turned off when both the anode and the gate are at a high level, or when both the anode and the gate are at a low level.
- the high level is, for example, 3 to 10 volts
- the low level is, for example, 0 (zero) volts. Therefore, for example, when the light emitting element T2 of the light emitting element block Bi is caused to emit light, the drive unit provides the high level select signal ⁇ i, and also provides the low level control signal ⁇ 2, the high level control signals ⁇ 1, ⁇ 3, and ⁇ 4. .
- the light emitting element T can selectively emit light.
- the bonding pad portion 8a is formed for each gate and anode of each light-emitting element T
- bonding pad portions twice as many as the number of the light-emitting elements T are required.
- the number of terminals connected to the drive unit can be n + m. Thereby, the number of terminals of the drive unit can be suppressed.
- the driving unit receives a reference clock pulse signal from the outside, and outputs the control signals ⁇ 1 to ⁇ 4 in synchronism based on the clock pulse signal.
- the clock pulse signal is supplied from the control unit 96 of the image forming apparatus 87 described later.
- the clock cycle of the clock pulse signal is selected to be longer than the control cycle in the control unit 96 of the image forming apparatus 87 described later.
- the drive unit outputs a select signal ⁇ i based on image information given together with the clock pulse signal.
- FIG. 11 is a cross-sectional view showing a light emitting device 51 which is a circuit board according to the fourth embodiment of the present invention.
- the cathode wiring 7 and the third electrode 14 are removed from the configuration of the light emitting device 41 of the second embodiment, and the light emitting element T is replaced with a light emitting diode from the light emitting thyristor.
- the drive unit can selectively cause the light emitting element T to emit light by providing the control signal ⁇ and the select signal ⁇ .
- the wire can be made difficult to peel off similarly to the light-emitting device 1 according to the first embodiment described above. This improves the service life of the device.
- the pad portions 8a can be arranged close to each other by shifting the groove portion 108 toward the light emitting element T.
- the light emitting elements T can be densely arranged in the arrangement direction Y.
- an image forming apparatus 87 with high resolution can be realized.
- FIG. 12 is a side view showing the basic configuration of the image forming apparatus 87 having the light emitting device 41.
- the image forming apparatus 87 which is a circuit board according to an embodiment of the present invention is an electrophotographic image forming apparatus, and includes a light emitting device 41 used as an exposure device for the photosensitive drum 90.
- the light emitting device 41 is mounted on a printed circuit board on which a driving circuit that is a driving IC is mounted, for example.
- the image forming apparatus 87 is an apparatus that employs a tandem system that forms four color images of Y (yellow), M (magenta), C (cyan), and K (black).
- the image forming apparatus 87 shown in FIG. 12 holds four light emitting devices 41Y, 41M, 41C, and 41K, a circuit board on which the lens arrays 88Y, 88M, 88C, and 88K that are light condensing units are mounted, and a lens array 88.
- Each light emitting device 41 is driven based on the color image information of each color by the driving unit.
- the light from each light emitting device is condensed and irradiated on each of the photosensitive drums 90Y, 90M, 90C, and 90K through the lens array 88.
- the lens array 88 includes, for example, a plurality of lenses respectively disposed on the optical axis of the light emitting device, and is configured by integrally forming these lenses.
- the light emitting device 41 and the lens array 88 are held by the first holder 89.
- the first holder 89 is aligned so that the light irradiation direction of the light emitting element 41 and the optical axis direction of the lenses of the lens array 88 are substantially matched.
- each of the photosensitive drums 90Y, 90M, 90C, and 90K for example, a photosensitive layer is attached to the surface of a cylindrical substrate. Then, an electrostatic latent image is formed on the photoreceptor layer by receiving light from each of the light emitting devices 41Y, 41M, 41C, and 41K.
- each of the photosensitive drums 90Y, 90M, 90C, and 90K the exposed photosensitive drums 90Y, 90M, 90C, and 90C are sequentially exposed toward the downstream side in the rotation direction with respect to the formation position of each electrostatic latent image.
- Developer supply portions 91Y, 91M, 91C, and 91K that supply the developer to 90K, a transfer belt 92, cleaners 93Y, 93M, 93C, and 93K, and chargers 94Y, 94M, 94C, and 94K are arranged.
- a transfer belt 92 that transfers an image formed on the photosensitive drum 90 with a developer onto a recording sheet is provided in common to the four photosensitive drums 90Y, 90M, 90C, and 90K.
- the photosensitive drums 90Y, 90M, 90C, and 90K are held by a second holder, and the second holder and the first holder 89 are relatively fixed.
- the rotation axis directions of the photosensitive drums 90Y, 90M, 90C, and 90K are aligned so as to substantially coincide with the arrangement direction Y perpendicular to the thickness direction Z and the width direction X of the light emitting device.
- the recording sheet is conveyed by the transfer belt 92, and the recording sheet on which an image is formed by the developer is conveyed to the fixing unit 95.
- the fixing unit 95 fixes the developer transferred to the recording sheet.
- the photosensitive drums 90Y, 90M, 90C, and 90K are rotated by a rotation driving unit.
- the control unit 96 supplies a clock signal and image information to the above-described driving unit, and also rotates and drives the photosensitive drums 90Y, 90M, 90C, and 90K, developer supply units 91Y, 91M, 91C, and 91K, and transfer.
- the unit 92, the chargers 94Y, 94M, 94C, 94K and the fixing unit 95 are controlled.
- the circuit board according to the present embodiment can be used for a thermal head used in a thermal printer, an ink jet printer, or the like by providing a heating resistor 121 as a drive unit.
- a thermal head according to an embodiment of the present invention includes a circuit board for the thermal head and a second drive circuit 122.
- the drive circuit 122 is connected to the wire 107 and drives the heating resistor 121 based on the second image information.
- the circuit board of this embodiment can be used for an image sensor by providing a light receiving element 131 as a drive unit.
- An image sensor according to an embodiment of the present invention includes a circuit board for the image sensor and an arithmetic circuit 132.
- the arithmetic circuit 132 performs arithmetic processing on the electrical signal generated by the light receiving element 131. This electrical signal is generated by the light receiving element 131 corresponding to the light pattern (third image information).
- the image forming apparatus of the present embodiment equipped with the light emitting element or the heating resistor, and the image sensor of the present embodiment equipped with the light receiving element can obtain a good wire adhesion even if the size is reduced. Since the circuit board is provided, the image forming apparatus and the image sensor are small, have a long life, and have a high yield.
- the present invention can be implemented in various other forms without departing from the spirit or main features thereof. Therefore, the above-described embodiment is merely an example in all respects, and the scope of the present invention is shown in the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the scope of the claims are within the scope of the present invention.
Abstract
Description
本発明の一実施形態の回路基板は、図4Cに示すように、基板上に位置する導体105と、この導体105に接続(bonding)されるワイヤ107とを具備している。そして、導体105は、その表面に、溝部108を有する。この溝部108は、例えば、図3に示すように、ワイヤ107を導体105に接続する際、キャピラリを導体105に押し付けることで形成される。溝部108は、ワイヤ107と導体105との接続部107a(斜線で示した部分)を、一部の開口Xを除いて取り囲む。ここでいう「溝部が取り囲む」とは、図4Cに示すように、溝部108の外周側の縁部108bおよび開口Xによって囲むことを意味している。この開口Xにおいて溝部108の内側領域と外側領域とが連続している。なお、内側領域とは、前述したような、溝部108によって取り囲まれた領域をいう。
従来に比べて大きい先端径を有するキャピラリを用いて作製が可能なことから、ワイヤ107がキャピラリによりつぶされる箇所とワイヤとの境界のサイズを大きくすることができ、付着力をさらに高めることができる。
<第1の実施形態に係る回路基板>
次に本発明の第1の実施形態に係る回路基板について、発光素子等の駆動部を具備した実施形態をもとに説明する。
以下、本発明の実施形態に係る回路基板の各構成要素についてさらに詳しく説明する。
図5は、本発明の第2の実施形態に係る回路基板(発光装置1)を示す断面図である。図6は、発光装置1を示す断面図である。基本的には図1A~図1Cで説明した構成と同じであるが、素子自体の構成を細かく説明するため、図1A~図1Cのワイヤと第2絶縁層とを省略して記載した。なお、図5は、発光装置1のうち、後述するゲート用台座部34と発光素子本体11を切断する面における断面図である。また、図6は、後述するカソード用台座部22を切断する面における断面図である。
発光装置41は、発光素子アレイ42と、複数の台座部Dと、複数の制御信号伝送配線GHと、アノード用配線6と、ゲート用配線5と、カソード用配線7と、第1絶縁層43と、第3絶縁層44と、複数の導体8とを含む。図7~9に示す発光装置41の構成において、前述の第1の実施形態に係る発光装置1の構成と対応する構成については、同一の符号を付す。なお、第3絶縁層44は、図1における第2の絶縁層とは別の構成要素である。
図11は、本発明の第4の実施形態に係る回路基板である発光装置51を示す断面図である。発光装置51は、第2の実施形態の発光装置41の構成から、カソード用配線7、第3電極14が除かれ、発光素子Tを発光サイリスタから発光ダイオードに置換されている。このように発光素子Tを発光ダイオードによって構成したとしても、駆動部は、制御信号ψおよびセレクト信号φを与えることによって選択的に発光素子Tを発光させることができる。
次に本発明の他の実施形態に係る画像形成装置について説明する。図12は、発光装置41を有する画像形成装置87の基本的構成を示す側面図である。なお、本発明の一実施形態に係る回路基板である画像形成装置87は、電子写真方式の画像形成装置であり、感光体ドラム90への露光装置に使用される発光装置41を有する。発光装置41は、図2に示したように、例えば、駆動用ICである駆動回路が搭載されたプリント基板に実装される。
また、図13に示すように、本実施形態の回路基板は、駆動部として発熱抵抗体121を設けることによって、サーマルプリンタまたはインクジェットプリンタ等に用いられるサーマルヘッドに用いることができる。本発明の一実施形態に係るサーマルヘッドは、このサーマルヘッド用の回路基板と、第2の駆動回路122と、を備える。駆動回路122は、ワイヤ107に接続され、第2の画像情報に基づいて発熱抵抗体121を駆動する。
また、図14に示すように、本実施形態の回路基板は、駆動部として受光素子131を設けることによって、イメージセンサに用いることができる。本発明の一実施形態に係るイメージセンサは、このイメージセンサ用の回路基板と、演算回路132と、を含む。演算回路132は、受光素子131で発生した電気信号を演算処理する。この電気信号は、光パターン(第3の画像情報)に対応して受光素子131で発生する。
本発明は、その精神または主要な特徴から逸脱することなく、他のいろいろな形態で実施できる。したがって、前述の実施形態はあらゆる点で単なる例示に過ぎず、本発明の範囲は特許請求の範囲に示すものであって、明細書本文には何ら拘束されない。さらに、特許請求の範囲に属する変形や変更は全て本発明の範囲内のものである。
2 基板
3 発光素子
4 台座部
5 ゲート用配線
6 アノード用配線
7 カソード用配線
8 導体
8a パッド部
8b 側面配線部
12 第1電極
13 第2電極
14 第3電極
34 ゲート用台座部
35 カソード用台座部
42 発光素子アレイ
87 画像形成装置
88 レンズアレイ
89 ホルダ
90 感光体ドラム
91 現像剤供給部
92 転写ベルト
93 クリーナ
94 帯電器
95 定着部
96 制御部
101 基板
102 台座部
103 発光素子
104 第1の絶縁層
105 導体
105a パッド部
105b 側面配線部
106 第2の絶縁層
107 ワイヤ
107a 接続部
108 溝部
109 電極
110 プリント基板
111 駆動用IC
112 電極
113 キャピラリ
120 サーマルヘッド
121 発熱抵抗体
122 駆動回路
130 イメージセンサ
131 受光素子
132 演算回路
A アノード用導体
C カソード用導体
D 台座部
G ゲート用導体
GH 制御信号伝送配線
Claims (4)
- 基板と、
前記基板上に位置し、表面に溝部を有する導体と、
前記導体に接続されたワイヤと、を備え、
前記溝部は、前記ワイヤと前記導体との接続部を、一部の開口を除いて取り囲む、回路基板。 - 前記基板上に位置し上面と側面とを有する台座部、をさらに備え、
前記導体は、前記上面上に位置するパッド部と、前記パッド部と電気的に接続されるとともに前記側面上に位置する側面配線部と、を有し、
前記開口が、前記パッド部と前記側面配線部との境界部に位置する、請求項1に記載の回路基板。 - 前記基板上であって前記台座部とは異なる領域に位置し、前記導体と電気的に接続された駆動部、をさらに備える請求項2に記載の回路基板。
- 前記台座部の形状が角錐台であり、
前記角錐台における前記上面と前記側面との境界のうち前記境界部は、平面視で前記駆動部に最も近接している、請求項3に記載の回路基板。
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JP2010526814A JP5114569B2 (ja) | 2008-08-29 | 2009-08-31 | 回路基板、画像形成装置、サーマルヘッドおよびイメージセンサ |
US13/061,097 US8525040B2 (en) | 2008-08-29 | 2009-08-31 | Circuit board and its wire bonding structure |
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JP2008222506 | 2008-08-29 | ||
JP2008-222506 | 2008-08-29 | ||
JP2009076241 | 2009-03-26 | ||
JP2009-076241 | 2009-03-26 |
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KR20210157794A (ko) * | 2020-06-22 | 2021-12-29 | 삼성전자주식회사 | 발광 다이오드 모듈 및 발광 다이오드 모듈 제조 방법 |
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JPH09289276A (ja) * | 1996-04-23 | 1997-11-04 | Hitachi Ltd | リードフレームおよびそれを用いた半導体装置 |
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US5842628A (en) * | 1995-04-10 | 1998-12-01 | Fujitsu Limited | Wire bonding method, semiconductor device, capillary for wire bonding and ball bump forming method |
JP3895570B2 (ja) * | 2000-12-28 | 2007-03-22 | 株式会社ルネサステクノロジ | 半導体装置 |
JP4484039B2 (ja) * | 2004-06-04 | 2010-06-16 | 日立電線株式会社 | 発光ダイオードアレイ |
JP4558539B2 (ja) * | 2005-03-09 | 2010-10-06 | 日立協和エンジニアリング株式会社 | 電子回路用基板、電子回路、電子回路用基板の製造方法および電子回路の製造方法 |
WO2007145074A1 (ja) * | 2006-06-15 | 2007-12-21 | Sanyo Electric Co., Ltd. | 電子部品 |
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2009
- 2009-08-31 JP JP2010526814A patent/JP5114569B2/ja not_active Expired - Fee Related
- 2009-08-31 WO PCT/JP2009/065225 patent/WO2010024442A1/ja active Application Filing
- 2009-08-31 US US13/061,097 patent/US8525040B2/en not_active Expired - Fee Related
Patent Citations (5)
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JPH09289276A (ja) * | 1996-04-23 | 1997-11-04 | Hitachi Ltd | リードフレームおよびそれを用いた半導体装置 |
JP2002171020A (ja) * | 2000-12-01 | 2002-06-14 | Sharp Corp | 半導体レーザ装置およびそのワイヤボンディング法 |
JP2005150294A (ja) * | 2003-11-13 | 2005-06-09 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2005236234A (ja) * | 2004-02-23 | 2005-09-02 | Sharp Corp | ワイヤボンド装置、ワイヤボンド検査方法およびワイヤボンド補正方法 |
JP2008112883A (ja) * | 2006-10-31 | 2008-05-15 | Hitachi Cable Ltd | 発光ダイオードアレイ及び発光ダイオードアレイの製造方法 |
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JPWO2010024442A1 (ja) | 2012-01-26 |
US8525040B2 (en) | 2013-09-03 |
JP5114569B2 (ja) | 2013-01-09 |
US20110155423A1 (en) | 2011-06-30 |
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