WO2010016417A1 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
WO2010016417A1
WO2010016417A1 PCT/JP2009/063522 JP2009063522W WO2010016417A1 WO 2010016417 A1 WO2010016417 A1 WO 2010016417A1 JP 2009063522 W JP2009063522 W JP 2009063522W WO 2010016417 A1 WO2010016417 A1 WO 2010016417A1
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WO
WIPO (PCT)
Prior art keywords
plasma processing
antenna
waveguide
processing apparatus
plasma
Prior art date
Application number
PCT/JP2009/063522
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English (en)
French (fr)
Japanese (ja)
Inventor
清隆 石橋
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to KR1020107028583A priority Critical patent/KR101221859B1/ko
Publication of WO2010016417A1 publication Critical patent/WO2010016417A1/ja

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides

Definitions

  • the present invention relates to a plasma processing apparatus. More specifically, the present invention relates to a microwave plasma processing apparatus that generates plasma using microwaves.
  • Plasma treatment is widely used in many semiconductor devices such as integrated circuits, liquid crystal circuit boards, and solar cells. Plasma processing is used for deposition of thin films such as Si and etching processes during semiconductor manufacturing. However, in order to develop and manufacture products with higher performance and higher functionality, it is required to support, for example, ultrafine processing technology. For this reason, a microwave plasma processing apparatus that can stably generate high-density plasma (low-pressure high-density plasma) in a high-vacuum state with low pressure has attracted attention.
  • high-density plasma low-pressure high-density plasma
  • the microwave plasma processing apparatus is a plasma processing apparatus that generates plasma by ionizing a gas by microwave energy.
  • the microwave is supplied from the slot plate of the antenna through the waveguide. And it permeate
  • the top plate is made of a dielectric material that can transmit microwaves.
  • a microwave is introduced into a plasma processing container containing an object to be processed through a waveguide from a microwave generator, and plasma is generated in the plasma processing container to generate the plasma processing container.
  • An apparatus in which a predetermined process is performed on a process target is disclosed (see Patent Document 1).
  • a matching means is provided in the waveguide, and plasma is efficiently generated by minimizing the reflected power generated from the plasma processing container when microwaves are introduced.
  • the propagation state of the microwave changes depending on the apparatus conditions such as the thermal expansion of the structural member such as the antenna due to the tolerance of each structural member in the manufacturing stage of the microwave plasma processing apparatus and the heat generated by the plasma. To do.
  • the plasma characteristics also vary depending on plasma generation conditions such as temperature, pressure, and gas type. For this reason, it is difficult to generate a uniform plasma with good reproducibility even under various process conditions (apparatus conditions, plasma generation conditions).
  • the present invention has been made in view of such circumstances, and an object of the present invention is to provide a plasma processing apparatus capable of obtaining plasma that is uniform and has good reproducibility even under various process conditions.
  • a plasma processing apparatus comprises: A plasma processing apparatus for generating plasma in a plasma processing container using a microwave and performing plasma processing on an object to be processed, A microwave source for generating the microwave; A waveguide for transmitting the microwave; An antenna for radiating microwaves transmitted from the waveguide; A top plate that propagates the microwave radiated from the antenna and transmits the microwave into the plasma processing container; Position adjusting means for moving the waveguide so that the position of the waveguide changes relative to the antenna; It is characterized by providing.
  • the position adjusting means may displace a part of the waveguide in contact with the antenna relative to the antenna.
  • the position adjusting means may be invariable relative to the antenna.
  • the waveguide is a coaxial waveguide having an inner conductor and an outer conductor disposed on an outer periphery of the inner conductor, and a part of the waveguide may be the inner conductor. Good.
  • the waveguide is a coaxial waveguide having an inner conductor and an outer conductor disposed on an outer periphery of the inner conductor, and a part of the waveguide may be the outer conductor. Good.
  • the antenna includes a slot plate and a slow wave plate disposed adjacent to the slot plate, and in the slot plate, a plurality of pairs of slots are respectively on a plurality of concentric circles.
  • the slots may be formed at substantially equal angular intervals, and the pair of slots may be formed to be orthogonal to each other.
  • a cooling means for cooling the antenna may be provided in contact with and overlapping the upper surface of the antenna.
  • a temperature sensor may be provided in the antenna, and the temperature of the heat medium flowing through the cooling means may be controlled based on the temperature measurement result by the temperature sensor.
  • a probe is provided in the plasma processing container, and the position of the waveguide relative to the antenna is changed relative to the antenna based on the plasma generation state measured using the probe. May be.
  • the slot plate is made of metal.
  • the plasma processing apparatus of the present invention it is possible to provide a plasma processing apparatus capable of generating plasma that is uniform and has good reproducibility even under various process conditions.
  • FIG. 1 is an overall cross-sectional view of a plasma processing apparatus according to an embodiment of the present invention. It is a top view of the slot plate concerning the embodiment of the present invention.
  • FIG. 2 is a schematic configuration diagram illustrating a relationship between the screw feeding mechanism according to the first embodiment of the present invention and the antenna and the waveguide of the plasma processing apparatus, and corresponds to a portion K surrounded by a one-dot chain line in FIG. 1. It is the structure schematic which shows the relationship between the screw feeding mechanism which concerns on 2nd Embodiment of this invention, and the antenna of a plasma processing apparatus, and a waveguide, and respond
  • FIG. 1 is an overall cross-sectional view of a microwave plasma processing apparatus (hereinafter simply referred to as “plasma apparatus”) 1 according to an embodiment of the present invention.
  • a plasma processing apparatus 1 includes a bottomed square cylindrical chamber (plasma processing container) 2, a top plate (dielectric window) 3, a disk-shaped antenna 4, a waveguide 5, and a microwave source 6. , A cooling jacket 7, a substrate holder 8, a vacuum pump 9, a high-frequency power source 10, a gas passage 11, and a temperature sensor 12.
  • the antenna 4 includes a slot plate 4a made of metal (shield member), and a slow wave plate 4b arranged adjacent to and above the slot plate 4a and made of a dielectric.
  • the waveguide 5 is a so-called coaxial waveguide, and a cylindrical outer conductor 5a disposed so as to form an inner conductor 5b and a cylindrical gap through which microwaves pass on the outer peripheral side of the inner conductor 5b. And.
  • FIG. 2 is a plan view of the slot plate 4a according to the embodiment of the present invention.
  • the slot plate 4a is disposed adjacent to the lower side of the slow wave plate 4b, and a large number of slots 41 and 42 are formed therethrough.
  • the slot plate 4a is located below the slow wave plate 4b. For this reason, the microwave propagates so as to spread in the surface direction of the slow wave plate 4b with the position introduced from the waveguide 5 as the center.
  • the slots 41 and 42 are formed on the concentric circles of a plurality of concentric circles at substantially equal angular intervals.
  • Each slot 41, 42 is formed to be orthogonal to each other.
  • the microwave propagates in the radial direction of the slot plate 4 a centering on the position introduced from the waveguide 5, and is radiated downward through the slots 41 and 42.
  • the microwaves are repeatedly reflected inside the top plate 3 and interfere to strengthen each other to form a standing wave.
  • plasma is formed in a direction perpendicular to the length direction of the slots 41 and 42.
  • the upper opening of the chamber 2 of the plasma processing apparatus 1 is closed by the top plate 3.
  • An antenna 4 is arranged on the top plate 3 so as to overlap.
  • a waveguide 5 is connected to the center of the antenna 4. Specifically, the lower end portion of the inner conductor 5 b is in contact with the slot plate 4 a of the antenna 4.
  • the slow wave plate 4b is located between the cooling jacket 7 and the slot plate 4a, and compresses the wavelength of the microwave and shifts it to the short wavelength side.
  • the slow wave plate 4b can be made of a dielectric material such as SiO 2 or Al 2 O 3 .
  • the cooling jacket 7 is provided so as to be in contact with and overlap the upper surface (one surface) of the antenna 4.
  • FIG. 5 is a schematic configuration diagram showing the relationship between the antenna and the waveguide of the conventional plasma processing apparatus, and corresponds to a portion K surrounded by a one-dot chain line in FIG.
  • the waveguide 5 is fixed to the antenna 4.
  • transduced into the top plate 3 via the waveguide 5 is fixed.
  • the waveguide 5 is fixed with respect to the antenna 4 even when the propagation state of the microwave in the antenna 4 changes due to thermal expansion of components such as the antenna 4. The propagation state of microwaves cannot be changed.
  • FIG. 3 is a schematic configuration diagram corresponding to a portion K surrounded by a one-dot chain line in FIG.
  • FIG. 3 shows the positional relationship between the waveguide 5 and the screw feed mechanism 20 as the position adjusting means according to this embodiment, and the antenna 4 and the top plate 3 in the plasma processing apparatus.
  • the plasma processing apparatus 1 of the present embodiment includes a screw feed mechanism 20 that supports the inner conductor 5b of the waveguide 5 so as to be displaceable as shown in FIG.
  • a screw feed mechanism 20 that supports the inner conductor 5b of the waveguide 5 so as to be displaceable as shown in FIG.
  • four screw feeding mechanisms 20 are arranged on the rectangular waveguide portion 5c of the waveguide 5 in a state where the inner conductors 5b are surrounded at equal angular intervals of 90 degrees. Yes.
  • the four screw feeding mechanisms 20 are configured to be able to fix the inner conductor 5b and to move the inner conductor 5b in any direction on the plane.
  • each screw feeding mechanism 20 includes a pressing plate 21, a fixing screw 22, an adjusting screw 23, and a stopper 24, respectively.
  • Each screw feed mechanism 20 is invariable relative to the antenna 4. Thereby, the position adjustment of the inner conductor 5b with respect to the antenna 4 can be performed easily and reliably.
  • the pressing plate 21 is provided in the upper opening of the rectangular waveguide portion 5c so as to be able to contact the outer peripheral wall of the inner conductor 5b.
  • a stopper 24 is provided on the outer peripheral side of the pressing plate 21 in the upper opening of the rectangular waveguide portion 5c.
  • the tip of an adjustment screw 23 screwed into the stopper 24 is screwed into the press plate 21. Then, by rotating the adjusting screw 23, the holding plate 21 can move toward the inner side in the radial direction of the inner conductor 5b.
  • the stopper 24 is provided at a position where the inner conductor 5b does not touch the outer conductor 5a even when the adjusting screw 23 is rotated to the maximum so as to prevent the inner conductor 5b from coming into contact with the outer conductor 5a. Then, the position of the inner conductor 5b is adjusted without contacting the outer conductor 5a via the retainer plate 21 by rotating the adjusting screw 23 with the retainer plate 21 in contact with the outer peripheral wall of the inner conductor 5b. It is possible.
  • a fixing screw 22 abuts against a side portion of the adjusting screw 23 and is screwed so as to prevent the adjusting screw 23 from rotating.
  • the adjustment screws 23 of the four screw feed mechanisms 20 are rotated, and the inner conductor 5b is moved to an arbitrary radial direction via the pressing plate 21. Move to position. Then, at the positioning point, the inner conductor 5b is fixed by tightening the fixing screw 22 in a state where the pressing plate 21 is in contact with the outer peripheral wall of the inner conductor 5b.
  • the introduction position of can be changed.
  • the plasma density distribution formed with the said microwave can be changed using the fact that the density position pattern of the microwave propagating through the top 3 is different depending on the introduction position of the microwave.
  • the predetermined plasma density distribution can be maintained by changing the introduction position of the microwaves in the antenna 4 and the top plate 3 by using the screw feed mechanism 20. it can.
  • the position of the inner conductor 5b of the waveguide 5 can be optimized according to the processing result by actually performing the plasma processing on the substrate W to be processed.
  • the substrate to be processed W is extracted every time a certain period has elapsed since the start of the plasma processing apparatus 1 or the start of the plasma processing, and the plasma density distribution is confirmed from the processing state.
  • the position where the optimal plasma density distribution is obtained can be determined by comparing the substrate to be processed W with the position of the inner conductor 5b.
  • the plasma generation state can be measured in real time with a probe or the like installed in the chamber 2 and the obtained information can be fed back to the control device of the plasma processing apparatus 1.
  • the position of the inner conductor 5b can be optimized by rotationally driving the adjusting screw 23 of the screw feeding mechanism 20 via a servo motor or the like by the control device.
  • the plasma density distribution is automatically controlled by adjusting the position of the waveguide 5 based on the generation state of the plasma. According to this method, the plasma density distribution can be stabilized quickly and with good reproducibility. In this case, unlike the method described above, the substrate W to be processed is not wasted, so that productivity can be further improved.
  • the inside of the chamber 2 is evacuated and decompressed using the vacuum pump 9 to be in a vacuum state.
  • a microwave is supplied from the microwave source 6 to the antenna 4 through the waveguide 5.
  • the microwave is radiated downward from the slots 41 and 42 of the slot plate 4 a while propagating between the slot plate 4 a and the slow wave plate 4 b in the radial direction of the antenna 4.
  • the microwave passes through the top 3.
  • the microwaves generate plasma in the chamber 2 in a direction perpendicular to the length direction of the slots 41 and 42.
  • the plasma spreads evenly in the surface direction in the region directly below the top 3.
  • the microwave propagates in the top plate 3 in the radial direction of the slot plate 4a centering on the position introduced from the waveguide 5 while repeating the reflection while maintaining the wavelength at a predetermined length. . Then, it is repeatedly reflected inside the top plate 3, interferes and strengthens, and forms a standing wave. The microwave forms a coarse / dense position pattern in the top 3. For this reason, a plasma density distribution is formed in the chamber 2 and stabilized. Further, the microwave travels while rotating the polarization plane inside the top plate 3 to form a circularly polarized wave.
  • a plasma excitation gas such as argon (Ar) or xenon (Xe)
  • the gas is ionized in the chamber 2 by the above-described microwave energy, and plasma is generated.
  • plasma processing such as so-called plasma CVD (Plasma Chemical Vapor Deposition) can be performed. That is, a thin film forming gas is supplied into the chamber 2 by a lower gas supply means (not shown). Then, by activating the gas, a thin film such as Si is deposited on the substrate W to be processed which is a semiconductor substrate placed on the substrate holder 8.
  • plasma processing is continuously performed on a predetermined number of substrates to be processed W. It can be performed.
  • the temperature sensor 12 is provided on the antenna 4 that is made of metal and is likely to be at the highest temperature.
  • the temperature measurement result by the temperature sensor 12 is fed back to a control device (not shown) that controls the plasma processing apparatus 1.
  • the temperature of a heat medium is controlled by the control apparatus, adjusting the quantity of the heat medium sent through the cooling flow path 7a. Thereby, the temperature of the top plate 3 is more reliably maintained constant.
  • the antenna 4 may not be sufficiently cooled. For this reason, the electromagnetic field distribution and the plasma density distribution in the top 3 may become non-uniform. Also, there are cases where uniform and good reproducibility plasma cannot be obtained depending on plasma generation conditions (temperature, pressure, gas type, etc.).
  • the inner conductor 5b of the waveguide 5 can be displaced to a position where an optimum plasma density distribution can be obtained. That is, according to the present embodiment, the position of the waveguide 5 relative to the antenna 4 can be changed relatively by moving the inner conductor 5 b of the waveguide 5 by the screw feeding mechanism 20. Thereby, even if the propagation state of the microwave in the top plate 3 changes due to the thermal expansion of the structural member such as the antenna 2 or the change of the plasma generation condition, the microwave introduction position to the antenna 4 is changed. be able to. And the propagation state of the microwave in the top plate 3 can be changed, and it becomes possible to generate plasma that is uniform and has good reproducibility under various process conditions.
  • the plasma processing apparatus 1 of the present embodiment by using the screw feed mechanism 20, the plasma processing is continuously performed on the predetermined number of substrates W to be processed as described above.
  • the plasma processing apparatus 1 of the embodiment even when a thin film such as Si is deposited or when the etching process conditions are changed, even when the process conditions change variously and the plasma density distribution changes.
  • the plasma density distribution can be adjusted and the plasma density distribution can be stabilized. That is, it is possible to generate a uniform plasma with good reproducibility. As a result, it is possible to maintain high processing efficiency by plasma processing.
  • the screw feeding mechanism 20 is provided outside the chamber 2 of the plasma processing apparatus 1. Therefore, according to the screw feeding mechanism 20, the position of the inner conductor 5b can be easily changed without changing the pressure in the chamber 2 or the flow rate of the introduced gas. Even when the plasma density distribution changes in the chamber 2, the electromagnetic field distribution in the top plate 3 is changed by changing the introduction position of the microwaves in the antenna 4 and the top plate 3 by the screw feed mechanism 20. Thus, a uniform plasma density distribution can be formed in the chamber 2. Further, by changing the position of the inner conductor 5b using the screw feed mechanism 20, even when the plasma processing is continuously performed under different plasma generation conditions, the optimum electromagnetic field distribution is always reproduced, The density distribution can be stabilized.
  • the plasma processing apparatus 1 of this embodiment has the same structure as that of the plasma processing apparatus 1 of the first embodiment shown in FIG. 1, and the corresponding components are given the same reference numerals as those in FIG. Is omitted.
  • the slot plate 4a of the first embodiment shown in FIG. 4 is used.
  • FIG. 4 is a schematic configuration diagram corresponding to a portion K surrounded by an alternate long and short dash line in FIG.
  • FIG. 4 shows the positional relationship between the waveguide 5 and the screw feed mechanism 30 as the position adjusting means according to the second embodiment, and the antenna 4 and the top plate 3 in the plasma processing apparatus.
  • the plasma processing apparatus 1 of this embodiment includes a screw feed mechanism 30 that supports the outer conductor 5a of the waveguide 5 so as to be displaceable, as shown in FIG.
  • a screw feed mechanism 30 that supports the outer conductor 5a of the waveguide 5 so as to be displaceable, as shown in FIG.
  • four screw feeding mechanisms 30 are arranged on the cooling jacket 7 in a state in which the outer conductors 5 a are surrounded at equal angular intervals of 90 degrees.
  • the four screw feeding mechanisms 30 are configured to be able to fix the outer conductor 5a and to move the outer conductor 5a in any direction on the plane.
  • Each screw feed mechanism 30 includes a pressing plate 31, a fixing screw 32, and an adjusting screw 33, respectively.
  • Each screw feed mechanism 30 is invariable relative to the antenna 4. Thereby, position adjustment of the outer conductor 5a with respect to the antenna 4 can be performed easily and reliably.
  • the pressing plate 31 is provided on the cooling jacket 7 so as to be able to contact the outer peripheral wall of the outer conductor 5a.
  • the front end of an adjustment screw 33 screwed into the screw feed mechanism main body 30a is screwed into the pressing plate 31. Then, by rotating the adjusting screw 33, the pressing plate 31 can move toward the radially inner side of the outer conductor 5a. The position of the outer conductor 5a can be adjusted via the pressing plate 31 by rotating the adjusting screw 33 in a state where the pressing plate 31 is in contact with the outer peripheral wall of the outer conductor 5a.
  • a fixing screw 32 abuts against a side portion of the adjustment screw 33 from the upper surface of the screw feed mechanism main body 30a and is screwed so as to prevent the adjustment screw 33 from rotating.
  • the adjustment screws 33 of the four screw feeding mechanisms 30 are rotated, and the outer conductor 5a is moved to an arbitrary position in the radial direction via the pressing plate 31. Then, the outer conductor 5a is fixed by tightening the fixing screw 32 in a state where the pressing plate 31 is in contact with the outer peripheral wall of the outer conductor 5a at the positioning point.
  • the introduction position of can be changed.
  • the plasma density distribution formed with the said microwave can be changed using the fact that the density position pattern of the microwave propagating through the top 3 is different depending on the introduction position of the microwave.
  • the predetermined plasma density distribution can be maintained by changing the introduction position of the microwaves in the antenna 4 and the top plate 3 by using the screw feed mechanism 30. it can.
  • the position of the outer conductor 5a of the waveguide 5 can be optimized according to the processing result by actually performing the plasma processing on the substrate W to be processed.
  • the substrate to be processed W is extracted every time a certain period has elapsed since the start of the plasma processing apparatus 1 or the start of the plasma processing, and the plasma density distribution is confirmed from the processing state. Then, the position where the optimum plasma density distribution can be obtained can be determined by comparing the substrate W to be processed with the position of the outer conductor 5a.
  • the plasma generation state can be measured in real time using a probe or the like installed in the chamber 2 and the obtained information can be fed back to the control device of the plasma processing apparatus 1.
  • the position of the outer conductor 5a can be optimized by rotationally driving the adjusting screw 33 of the screw feeding mechanism 30 via a servo motor or the like by the control device.
  • the plasma density distribution is automatically controlled by adjusting the position of the waveguide 5 based on the generation state of the plasma. According to this method, the plasma density distribution can be stabilized quickly and with good reproducibility. In this case, unlike the method described above, the substrate W to be processed is not wasted, so that productivity can be further improved.
  • the plasma processing according to the technical idea of the present invention can be applied to all plasma processing such as ashing processing as well as thin film deposition and etching technology.
  • the substrate to be processed W is not limited to a semiconductor substrate, and may be a glass substrate, a ceramic substrate, or the like, and can be applied to plasma processing for various other types of substrates.
  • the plasma processing apparatus demonstrated by the said embodiment is an example, and is not limited to these.
  • the position adjusting means for moving the position of the waveguide 5 with respect to the antenna 4 is not limited to the screw feed mechanisms 20 and 30 described above, and other position adjusting means may be applied.
  • a gap adjusting means such as a gap gauge is inserted between a frame formed between the waveguide 5 serving as a movable part and the cooling jacket 7 serving as a fixed part to guide the fixed part.
  • a method of adjusting the position of the wave tube 5 to a predetermined position may be adopted. Or you may comprise so that it can adjust a position by expanding the displacement of the waveguide 5 with respect to a fixing
  • the position adjustment of the waveguide 5 can be performed manually or automatically.
  • Plasma processing equipment (microwave plasma processing equipment) 2 chamber (plasma processing vessel) 3 Top plate (dielectric window) 4 Antenna 5 Waveguide 5a Outer conductor 5b Inner conductor 5c Rectangular waveguide 6 Microwave source 7 Cooling jacket 10 High frequency power supply 20, 30 Screw feed mechanism 21, 31 Holding plate 22, 32 Fixing screw 23, 33 Adjustment screw 24 Stopper

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PCT/JP2009/063522 2008-08-08 2009-07-29 プラズマ処理装置 WO2010016417A1 (ja)

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JP2008205889A JP5143662B2 (ja) 2008-08-08 2008-08-08 プラズマ処理装置
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JP5893865B2 (ja) * 2011-03-31 2016-03-23 東京エレクトロン株式会社 プラズマ処理装置およびマイクロ波導入装置
JP5916467B2 (ja) * 2012-03-27 2016-05-11 東京エレクトロン株式会社 マイクロ波放射アンテナ、マイクロ波プラズマ源およびプラズマ処理装置
JP2024017374A (ja) * 2022-07-27 2024-02-08 日新電機株式会社 プラズマ処理装置

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JP4187386B2 (ja) * 1999-06-18 2008-11-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP4222707B2 (ja) * 2000-03-24 2009-02-12 東京エレクトロン株式会社 プラズマ処理装置及び方法、ガス供給リング及び誘電体
JP2004055614A (ja) * 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
JP4873405B2 (ja) * 2006-03-24 2012-02-08 東京エレクトロン株式会社 プラズマ処理装置と方法
JP5111806B2 (ja) * 2006-08-02 2013-01-09 東京エレクトロン株式会社 プラズマ処理装置と方法

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JP2003188103A (ja) * 2001-12-14 2003-07-04 Tokyo Electron Ltd プラズマ処理装置

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KR101221859B1 (ko) 2013-01-15
TWI388245B (zh) 2013-03-01
JP5143662B2 (ja) 2013-02-13
TW201018323A (en) 2010-05-01
KR20110016446A (ko) 2011-02-17

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