WO2010015333A3 - Gabarit et procédé servant à fabriquer un gabarit de lithographie possédant un rapport de forme élevé et utilisation du gabarit pour perforer un substrat à la nanoéchelle - Google Patents

Gabarit et procédé servant à fabriquer un gabarit de lithographie possédant un rapport de forme élevé et utilisation du gabarit pour perforer un substrat à la nanoéchelle Download PDF

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Publication number
WO2010015333A3
WO2010015333A3 PCT/EP2009/005340 EP2009005340W WO2010015333A3 WO 2010015333 A3 WO2010015333 A3 WO 2010015333A3 EP 2009005340 W EP2009005340 W EP 2009005340W WO 2010015333 A3 WO2010015333 A3 WO 2010015333A3
Authority
WO
WIPO (PCT)
Prior art keywords
template
nanoscale
lithography
aspect ratio
high aspect
Prior art date
Application number
PCT/EP2009/005340
Other languages
English (en)
Other versions
WO2010015333A2 (fr
Inventor
Amin Saleem Muhammad
David Brud
Jonas Berg
Mohammad Shaliqual Kabir
Vincent Desmaris
Original Assignee
Smoltek Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Smoltek Ab filed Critical Smoltek Ab
Priority to EP20090777381 priority Critical patent/EP2307928A2/fr
Priority to CN200980131624.4A priority patent/CN102119363B/zh
Priority to US13/057,508 priority patent/US9028242B2/en
Priority to JP2011521455A priority patent/JP5405574B2/ja
Publication of WO2010015333A2 publication Critical patent/WO2010015333A2/fr
Publication of WO2010015333A3 publication Critical patent/WO2010015333A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G03F7/0022—Devices or apparatus
    • G03F7/0027—Devices or apparatus characterised by pressure means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
  • Catalysts (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

Gabarit et procédé de fabrication d'un gabarit possédant un rapport de forme élevé, d'empreinte à la nanoéchelle au moyen de nanostructures à des fins lithographiques, et utilisation du gabarit afin de créer des perforations sur des matériaux et des produits.
PCT/EP2009/005340 2008-08-05 2009-07-23 Gabarit et procédé servant à fabriquer un gabarit de lithographie possédant un rapport de forme élevé et utilisation du gabarit pour perforer un substrat à la nanoéchelle WO2010015333A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP20090777381 EP2307928A2 (fr) 2008-08-05 2009-07-23 Gabarit et procédé servant à fabriquer un gabarit de lithographie possédant un rapport de forme élevé et utilisation du gabarit pour perforer un substrat à la nanoéchelle
CN200980131624.4A CN102119363B (zh) 2008-08-05 2009-07-23 用于光刻的高深宽比模板、制作相同模板的方法、以及这种模板在纳米级基板射孔中的应用
US13/057,508 US9028242B2 (en) 2008-08-05 2009-07-23 Template and method of making high aspect ratio template for lithography and use of the template for perforating a substrate at nanoscale
JP2011521455A JP5405574B2 (ja) 2008-08-05 2009-07-23 テンプレート、およびリソグラフィ用高アスペクト比テンプレートを製造する方法、ならびにナノスケールで基板を穿孔するためのテンプレートの使用

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0801770 2008-08-05
SE0801770-9 2008-08-05

Publications (2)

Publication Number Publication Date
WO2010015333A2 WO2010015333A2 (fr) 2010-02-11
WO2010015333A3 true WO2010015333A3 (fr) 2010-05-27

Family

ID=41226229

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/005340 WO2010015333A2 (fr) 2008-08-05 2009-07-23 Gabarit et procédé servant à fabriquer un gabarit de lithographie possédant un rapport de forme élevé et utilisation du gabarit pour perforer un substrat à la nanoéchelle

Country Status (7)

Country Link
US (1) US9028242B2 (fr)
EP (1) EP2307928A2 (fr)
JP (1) JP5405574B2 (fr)
KR (1) KR20110055586A (fr)
CN (1) CN102119363B (fr)
MY (1) MY153444A (fr)
WO (1) WO2010015333A2 (fr)

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CN101937871A (zh) * 2010-08-16 2011-01-05 复旦大学 一种构造低介电常数介质材料表面形貌的方法
JP5458036B2 (ja) * 2011-02-09 2014-04-02 株式会社東芝 ナノインプリント用スタンパ及びその製造方法
US9081460B2 (en) * 2011-05-20 2015-07-14 Gwangju Institute Of Science And Technology Electronic device, method for manufacturing the same and touch panel including the same
EP2720772A2 (fr) * 2011-06-17 2014-04-23 Battelle Memorial Institute Structures de membranes d'osmose directe, d'osmose inverse et de nano/micro filtration
RU2476917C1 (ru) * 2011-08-12 2013-02-27 Открытое акционерное общество "НИИ молекулярной электроники и завод "Микрон" Способ изготовления штампа для наноимпринт литографии
TWM429700U (en) * 2012-01-19 2012-05-21 Benq Materials Corp Engraving device
CN105378562B (zh) * 2013-06-20 2019-11-05 Ev 集团 E·索尔纳有限责任公司 具有印模结构的印模及其制造装置和方法
KR102130688B1 (ko) * 2015-11-03 2020-07-07 삼성디스플레이 주식회사 레이저 결정화 방법
CN107175939B (zh) * 2016-03-09 2020-02-28 华邦电子股份有限公司 用于印刷线路制程的印章及其制造方法以及印刷线路制程
US9955584B2 (en) 2016-04-25 2018-04-24 Winbond Electronics Corp. Stamp for printed circuit process and method of fabricating the same and printed circuit process
US11261085B2 (en) 2017-05-03 2022-03-01 Nanotech Security Corp. Methods for micro and nano fabrication by selective template removal
US10679110B2 (en) 2018-04-01 2020-06-09 Ramot At Tel-Aviv University Ltd. Nanotags for authentication
KR102267904B1 (ko) * 2020-04-01 2021-06-22 한국기계연구원 유리전이온도를 이용한 미세구조체 전사방법 및 이를 이용하여 제작된 미세구조체 소자
US11543584B2 (en) * 2020-07-14 2023-01-03 Meta Platforms Technologies, Llc Inorganic matrix nanoimprint lithographs and methods of making thereof with reduced carbon
CN112960641B (zh) * 2020-10-12 2024-01-23 重庆康佳光电科技有限公司 转移构件、其制备方法及具有其的转移头

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Also Published As

Publication number Publication date
CN102119363A (zh) 2011-07-06
US20110195141A1 (en) 2011-08-11
WO2010015333A2 (fr) 2010-02-11
MY153444A (en) 2015-02-13
JP5405574B2 (ja) 2014-02-05
US9028242B2 (en) 2015-05-12
EP2307928A2 (fr) 2011-04-13
CN102119363B (zh) 2015-10-21
KR20110055586A (ko) 2011-05-25
JP2011530803A (ja) 2011-12-22

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