WO2010013518A1 - 反射型発光ダイオード - Google Patents
反射型発光ダイオード Download PDFInfo
- Publication number
- WO2010013518A1 WO2010013518A1 PCT/JP2009/056964 JP2009056964W WO2010013518A1 WO 2010013518 A1 WO2010013518 A1 WO 2010013518A1 JP 2009056964 W JP2009056964 W JP 2009056964W WO 2010013518 A1 WO2010013518 A1 WO 2010013518A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- side lead
- light emitting
- support
- lead
- element mount
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 claims abstract description 34
- 229920005989 resin Polymers 0.000 claims description 35
- 239000011347 resin Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000005452 bending Methods 0.000 abstract description 26
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 239000010949 copper Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 238000010538 cationic polymerization reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Definitions
- the present invention relates to a surface-mounted reflective light-emitting diode mounted on the surface of a printed circuit board or the like, and a method for manufacturing the same.
- Patent Document 1 a surface-mount type light emitting diode as described in Japanese Patent No. 398635 (Patent Document 1) is known.
- This conventional surface mount type light emitting diode has a concave reflecting surface inside, a concave case having a groove on the upper part of the surrounding wall, a wide lead portion located outside the concave case, and a tip end side thereof. It consists of a pair of leads consisting of a narrow lead part and a light-emitting element mounted on the mounting part at the tip of the narrow lead part of one lead, and each lead has a narrow lead part that fits into the groove of the concave case.
- the wide lead portion is bent along the outer surface of the concave case, and the wide lead portion is bent along the outer surface of the concave case.
- the lower end portion of the housing is bent inward along the bottom surface of the concave case, and the mounting terminal is constituted by the bent portion.
- the concave portion of the concave case is filled with a transparent resin such as a transparent epoxy resin or a transparent silicon resin, the narrow lead portion is fixed, and the light emitting element is fixed.
- the manufacturing method of such a reflection type light emitting diode is as follows.
- the light emitting element is bonded to the mount portion at one end of the pair of leads extracted by etching or metal mold using a conductive adhesive, and then the other end of the light emitting element is connected to the end of the narrow lead portion of the other lead.
- the lead of the lead and the other lead have a common center line, and the lead wire is positioned so that the lead wire is positioned on the center line.
- the concave part of the concave case is filled with a transparent resin and cured.
- the light emitting element and the narrow lead portion of the lead are integrated with the concave case. Thereafter, predetermined portions of the leads on both sides are bent to form a shape along the side surface of the concave case.
- Such a conventional reflection type light emitting diode can reduce the thermal resistance of the reflection type light emitting diode because the heat generated in the light emitting element can be released to the outside through the wide lead portion located outside the concave case.
- the pair of leads on which the light emitting element is mounted are fitted into the concave case so that the light emitting element faces downward and is positioned at the center of the concave portion, and in this state, the transparent resin Since the narrow lead part of the light emitting element and the lead is fixed by filling the concave part of the concave case and then cured, each of the leads on both sides is bent to form a shape along the outer surface of the concave case. In this bending process, it was found that the lead was processed in a state in which residual stress was accumulated in the cured resin due to a force acting during the bending process between the narrow lead parts adjacent to both leads.
- the present invention has been made in view of the above-described problems of the prior art, and does not break the wire connected between the light-emitting element and the lead tip portion during bending of the lead, and has high reliability. It is an object of the present invention to provide a reflection type light emitting diode capable of manufacturing a product with a high yield and a manufacturing method thereof.
- Another object of the present invention is to provide a reflection type light emitting diode having good heat dissipation and capable of supplying a large current, and thus capable of emitting light with high luminance, and a method for manufacturing the same.
- One feature of the present invention is that a support body having a concave reflecting surface therein, and an element mount side lead extending linearly horizontally from the upper central portion of the reflecting surface toward one wall surface of the support body, A wire connection-side lead extending horizontally from the upper central portion of the support surface to the other wall surface, and a center-side tip portion of the element mount-side lead above the support surface.
- a light emitting element, and a wire bonded between the light emitting element and a central tip of the support on the wire connection side lead above the reflecting surface, and a center tip of the element mount lead And the center-side tip portion of the wire connection side lead are placed in a positional relationship shifted from the position on the longitudinal extension line of the element mount-side lead, and both the center-side tip portions are close to each other.
- An optical diode is placed in a positional relationship shifted from the position on the longitudinal extension line of the element mount-side lead, and both the center-side tip portions are close to each other.
- the metal plate of the lead material is processed into a predetermined pattern so that the element mount side lead and the wire connection side lead are brought close to each other in the direction in which their tip portions deviate from the common center line.
- a light emitting element is mounted on the tip of the element mount side lead, a wire is bonded between the light emitting element and the tip of the wire connection side lead, and a support having a concave reflecting surface inside
- each of the element mount side lead and the wire connection side lead is placed on the opening side of the reflection surface in a posture in which the light emitting element faces the reflection surface above the center of the reflection surface
- the concave portion of the support is filled with a transparent resin and cured to fix the tip portions of the element mount side lead and the wire connection side lead in the support body, and the element mount side
- the portions of the lead and the wire connection side lead that protrude outside the support are bent and bent downward along the outer surface of the support to connect the element mount side lead and the wire
- the support has a concave reflecting surface inside, and linearly extends horizontally in both directions from the upper center of the reflecting surface of the support to one wall surface and the other wall surface.
- An element mount side lead extending; a wire connection side lead extending horizontally from the upper central portion of the reflection surface of the support toward the one wall surface; and the element mount side lead above the reflection surface of the support.
- the center side tip is a reflection type light emitting diode which is placed at a position deviated from the position on the longitudinal center line of the element mount side lead and in which both center side tips are brought close to each other.
- a metal plate of a lead material is processed into a predetermined pattern, and the tip of the wire connection side lead is the center in the longitudinal direction of the element mount side lead with respect to the center portion of the element mount side lead.
- a light emitting element is mounted at the center portion of the element mount side lead, and the light emitting element and the distal end portion of the wire connection side lead. The light-emitting element attaches the element mount side lead and the wire connection side lead to the opening side of the reflection surface with respect to a support having a concave reflection surface inside.
- Another feature of the present invention is a support body having a concave reflecting surface therein, and an element mount extending horizontally in both directions from the upper center portion of the reflecting surface of the support body to one wall surface and the other wall surface
- the central portion of the lead is a reflective light emitting diode formed at a position close to the central portion of the element mount side lead.
- Still another feature of the present invention is that the metal plate of the lead material is processed into a predetermined pattern so that the center portion of the wire connection side lead is close to the center portion of the element mount side lead.
- a light emitting element is mounted at the center of the side lead, a wire is bonded between the light emitting element and the center of the wire connecting side lead, and the reflection is applied to the support having a concave reflecting surface inside.
- the element mount side lead and the wire connection side lead are respectively placed on the opening side of the surface in a posture in which the light emitting element faces the reflection surface above the center of the reflection surface, and in the concave portion of the support body
- the element mount side lead and the wire connection side lead are fixed together in a support body by filling with a transparent resin and cured, and the support of each of the element mount side lead and the wire connection side lead is fixed. Bending the outer part of the body and bending it downward along the outer surface of the support.
- the rear end portions of the element mount side lead and the wire connection side lead This is a manufacturing method of a reflective light emitting diode that is bent inward so as to be in contact with the bottom surface.
- the center tip of the element mount lead and the center tip of the wire connection lead are displaced from the position on the longitudinal extension line of the element mount lead. Since both ends on the center side are close to each other, both leads are placed on the support, filled with transparent resin in the support, cured, and fixed, and then the element mount side leads.
- the reflective light emitting diode is manufactured by a method of bending the portion of each of the leads connected to the wire connection side lead and the outside of the support body. Of the force that moves in the longitudinal direction of the side lead, the stroke for pulling the wire is reduced, so that the stress acting on the wire can be reduced, and the manufacturing process and the light emitting diode can be reduced.
- the eliminated or to break or come off the connection portion of the wire in the process, such as reflow when mounted on the substrate can be manufactured with good yield reliable products as a result.
- the light emitting diode is located at the center of the element mount side lead above the center of the concave reflecting surface of the support.
- the transition part of the element mount side lead that extends in both directions from the center of the mount side lead to one wall surface and the other wall surface is transmitted simultaneously to one outer wall surface and the other outer wall surface of the support, and radiates heat to the outside air Therefore, heat dissipation is good, and a large current can be passed through the light-emitting diode, thereby enabling high-luminance light emission.
- the above-described reflective light emitting device has good heat dissipation, can flow a large current through the light emitting diode, and thus can emit high luminance. Diodes can be manufactured with good yield.
- FIG. 1 is a perspective view of a reflective light emitting diode according to a first embodiment of the present invention.
- FIG. 2 is a cross-sectional view of the reflective light emitting diode of the above embodiment.
- FIG. 3 is a partially cutaway plan view of a lead frame used in manufacturing the reflective light emitting diode of the above embodiment.
- FIG. 4 is a perspective view of a state in which a light emitting element is attached to a pair of leads and wires are bonded in the manufacturing process of the reflective light emitting diode of the above embodiment.
- FIG. 5 is a perspective view of a concave case used in the manufacture of the reflective light emitting diode of the above embodiment.
- FIG. 6 is a manufacturing process diagram from the assembly process of a pair of leads to the concave case to the filling / curing process of the transparent resin and the bending process of the leads in the manufacture of the reflective light emitting diode of the above embodiment.
- FIG. 7 is a perspective view of a reflective light emitting diode according to a second embodiment of the present invention.
- FIG. 8 is a perspective view of a reflective light-emitting diode according to a third embodiment of the present invention.
- FIG. 9 is a cross-sectional view of the reflective light emitting diode of the above embodiment.
- FIG. 10 is a partially broken plan view of a lead frame used in manufacturing the reflective light emitting diode of the above embodiment.
- FIG. 11 is a perspective view of a reflective light emitting diode according to a fourth embodiment of the present invention.
- FIG. 12 is a cross-sectional view of the reflective light emitting diode of the above embodiment.
- FIG. 13 is a partially broken plan view of a lead frame used in manufacturing the reflective light emitting diode of the above embodiment.
- FIG. 1 shows a reflective light emitting diode 1 according to a first embodiment of the present invention.
- This reflection type light emitting diode 1 has a paraboloid-shaped reflection surface 2 on the upper surface, a groove 4 is formed on one side of the surrounding wall 3, and a groove 5 is formed on the upper side of the opposite side.
- a concave case 6 serving as a rectangular parallelepiped support, and a narrow upper piece 7a and a wide vertical piece 7b crossing above the reflecting surface 2 of the concave case 6 and along the wall side surface and bottom surface of the concave case 6.
- the element mount side lead 7 formed by bending the wide lower piece 7c, and the element mount side lead 7 are opposed to each other.
- the narrow upper piece 8a, the wide vertical piece 8b, and the wide lower piece The wire connection side lead 8 formed by bending 8c and the light emitting element 9 mounted on the case center side tip of the upper piece 7a of the element mount side lead 7 are configured. One end of a wire 10 is connected to the light emitting element 9, and the other end of the wire 10 is connected to the tip of the upper piece 8 a of the wire connection side lead 8.
- the narrow upper piece 7 a of the element mount side lead 7 has a straight shape extending linearly along the center line of the upper surface of the concave case 6.
- the upper piece 8a of the wire connection side lead 8 extends so that the tip thereof is bent from the root portion with respect to the center line, and the tip portion thereof is the tip portion on the center side of the upper piece 7a of the element mount side lead 7. And a shape located at a position close to each other in a direction perpendicular to the center line.
- the bent bases of the narrow upper pieces 7 a and 8 a of the pair of leads 7 and 8 are fitted into the grooves 4 and 5 of the concave case 6, respectively, and one pair is formed outside the grooves 4 and 5 of the concave case 6.
- the wide vertical pieces 7b and 8b of the respective leads 7 and 8 are along the side surface of the concave case 6, and the wide lower pieces 7c and 8c of the pair of leads are in contact with the bottom surface of the concave case 6.
- the stepped portion of the pair of leads 7, 8 is closed so as to close the step from the upper surface side of the fitting portion of the upper pieces 7 a, 8 a to the upper edge surface of the concave case 6.
- a small UV curable resin is packed and cured to form the weirs 11 and 12, and at the same time, the bent bases of the upper pieces 7a and 8a of the leads 7 and 8 are fixed.
- a transparent epoxy resin such as a cationic polymerization type transparent epoxy resin described in Japanese Patent No. 4001347 (Patent Document 2) or a transparent resin 13 such as a transparent silicon resin is provided.
- the upper pieces 7a, 8a of the pair of leads 7, 8 and the wing pieces 7d, 8d, the light emitting element 9, and the wire 10 are transparent. It is fixed in a state where it is buried in the resin 13.
- the reflection type diode 1 As shown in FIG. 2, in the reflection type light emitting diode 1 having the above-described configuration, the reflection type diode 1 is placed on a substrate (not shown), and the lower pieces 7c and 8c of the leads 7 and 8 on both sides of the bottom are soldered. Connect to the positive terminal and negative terminal with and fix. In this mounted state, the positive terminal and the negative terminal are energized, whereby the light emitting element 9 is energized through the leads 7 and 8 on both sides to emit light. Most of the light from the light emitting element 9 comes out downward as shown by the arrow line in FIG. 2 and is reflected by the reflecting surface 2 having a parabolic curved surface, becomes almost parallel light rays and is perpendicular to the upper surface of the concave case 6. Light in any direction. For this reason, in the reflection type light emitting diode 1, it is possible to obtain light having high directivity and strong directivity, and therefore, high brightness light when the light strikes.
- a manufacturing method of the reflective light emitting diode 1 having the above structure will be described with reference to FIGS.
- a highly conductive material as shown in FIG. 3 for example, containing 98% to 99% of copper (Cu) as a main component, including some iron (Fe) and sulfur (S), and 2
- Cu copper
- Fe iron
- S sulfur
- a thin plate with a silver plating of up to 6 ⁇ m is used as a material, and a plurality of pairs of element mount side leads 7 and wire connection side leads 8 are opposed to both sides as shown in FIG.
- a lead frame 20 that is formed side by side is used.
- the shape of the element mount side lead 7 is linear and has a narrow upper piece 7a, a wide vertical piece 7b, and a wide lower piece 7c that are symmetrical with respect to the center line C.
- the shape of the wire connection side lead 8 is such that a narrow upper piece 8a, a wide vertical piece 8b, and a wide lower piece 8c extending from the root portion to the center line C are formed. Yes.
- the wide connecting piece 8b and the wide lower piece 8c of the wire connecting side lead 8 are formed symmetrically with respect to the center line C.
- a stress relief hole may be formed.
- the flat elliptical holes 21 and 22 formed at positions corresponding to the end portions of the element mount side lead 7 and the wire connection side lead 8 that become the lower pieces 7 c and 8 c are broken. This is to reduce the cutting resistance when cutting with the wires 23 and 24.
- the light emitting element 9 is mounted on each pair of leads 7, 8, and wire bonding is performed. That is, as shown in FIG. 4, the light emitting element 9 is fixed to the tip portion of the upper piece 7a of the element mount side lead 7 with silver paste, and then the bent light emitting element 9 and the wire connection side lead 8 are bent. Wire bonding is performed to the tip of the upper piece 8a, and a wire 10 such as a gold wire is connected.
- the concave case 6 is formed with a parabolic concave curved concave portion on the upper surface side, and the reflective surface 2 is formed by depositing aluminum or silver on the concave bottom surface.
- a groove 4 is formed at the upper edge of one side of the wall 3 around the concave case 6, and a groove 5 is formed at the upper edge of the opposite side.
- FIG. 6A The procedure for attaching each pair of leads 7 and 8 of the lead frame 20 to the concave case 6 is shown in FIG. That is, as shown in FIG. 6A, the pair of leads 7 and 8 on which the light-emitting element 9 is mounted and the wires 10 are connected by wire bonding are arranged so that the upper pieces 7a and Each portion corresponding to 8 a is fitted into the grooves 4 and 5 of the concave case 6. Thereby, inside the concave case 6, portions corresponding to the narrow upper pieces 7a and 8b are positioned above the reflecting surface 2, and the wide vertical pieces 7b and 8b, the lower piece 7c, A portion corresponding to each of 8c is located.
- the concave case 6 is formed from the upper surface side of the fitting portion of the upper pieces 7 a and 8 a of the pair of leads 7 and 8.
- the dams 11 and 12 are formed by filling and curing a small UV curable resin in the step portion so as to block the step up to the upper surface.
- a transparent resin 13 such as a high-viscosity transparent epoxy resin or a transparent silicon resin containing a curing catalyst is filled in the concave portion of the concave case 6 up to its upper edge surface.
- the portions corresponding to the narrow upper pieces 7 a and 8 a, the light emitting element 9, and the wire 10 are integrated with the concave case 6 by curing in an atmosphere furnace at 130 ° C.
- the pair of leads 7 , 8 is bent to the outside of the concave case 6.
- the portions corresponding to the wide vertical pieces 7b, 8b are made vertical by bending the base portions of the upper pieces 7a, 8b connected thereto downward in the drawing along the side surface of the concave case 6,
- the concave case 6 is bent inward so that portions corresponding to the lower pieces 7c and 8c are in contact with the bottom surface.
- the pair of leads 7 and 8 are bent into the narrow upper pieces 7a and 8a, the wide vertical pieces 7b and 8b, and the wide lower pieces 7c and 8c, and the bending process is completed.
- the reflection type light emitting diode 1 shown in FIGS. 1 and 2 is completed.
- the lower pieces 7c, 8c of the pair of leads 7, 8 may be fixed to the bottom surface of the concave case 6 with solder.
- the linear shape of the element mount side lead 7 and the narrow width of the upper piece 7a with respect to the narrow width of the wire connection side lead 8 are used.
- the piece 8a is bent so as to be displaced from the center line C, and is formed in such a shape that the center side tip portions are close to each other in the direction perpendicular to the center line C, and the upper piece 7a of the element mount side lead 7 is formed. Since the light emitting element 9 is attached to the front end portion of this wire and the wire 10 is bonded between the light emitting element 9 and the center side front end portion of the upper piece 8a of the wire connection side lead 8, the following effects are obtained.
- a force that separates the leads 7 and 8 between the upper pieces 7a and 8a of the leads 7 and 8a acts on the center line C due to the stress generated when the wires 10 are operated, but the wire 10 is positioned in a direction perpendicular to the direction of the separating force. Therefore, the wire 10 is not pulled by the pulling force. As a result, it is possible to effectively prevent the wire 10 from being disconnected due to the stress generated when the leads 7 and 8 are bent in the prior art, and the production yield of the product is improved.
- FIG. 7 shows a reflective light emitting diode 1A of the second embodiment.
- the reflection type light emitting diode 1A according to the present embodiment is characterized in that wing pieces 7d and 8d extending laterally are formed on the side edges of the narrow upper pieces 7a and 8a of the pair of leads 7 and 8, respectively. It is said.
- Other configurations and the manufacturing method are the same as those in the first embodiment.
- the wing pieces 7d and 8d extending laterally are formed on the side edges of the narrow upper pieces 7a and 8a of the pair of leads 7 and 8 as in the present embodiment, this wing The pieces 7d and 8d become a large resistance during bending, and the upper pieces 7a and 8a are effectively prevented from being displaced in the transparent resin 13, and as a result, the product yield can be further improved.
- the surface area of the narrow upper pieces 7a and 8a is increased by the formation of the blade pieces 7d and 8d, and the heat radiation performance in the upper pieces 7a and 8a is higher than that of the conventional one, and the thermal resistance is increased accordingly.
- a larger current can be applied to the light emitting element 9 to increase the output, and conversely, when the current similar to the prior art is applied to the light emitting element 9. Can relax the temperature condition.
- a reflection type light emitting diode having a conventional structure and a reflection type light emitting diode according to an embodiment of the present invention were manufactured, and the occurrence rate of wire breakage was evaluated. In the case of, it was confirmed that there was no generation of defective products and that it could be manufactured with good yield.
- a reflective light emitting diode 1B according to a third embodiment of the present invention and a method for manufacturing the same will be described with reference to FIGS.
- the reflection type light emitting diode 1B of the present embodiment has a parabolic concave reflection surface 2 on the upper surface portion, a groove 4 is formed at the upper center of one side of the surrounding wall portion 3, and the upper three portions on the opposite side.
- the narrow upper pieces 701 a and 701 b of the element mount side lead 700 have a straight shape extending linearly along the center line of the upper surface of the support 600.
- a wide vertical piece 702a continuous with the narrow upper piece 701a on one side of the element mount side lead 700 is formed with a sub-piece 705 extending in parallel with the upper piece 701a.
- the tip of the sub-piece 705 is a bulging portion 706.
- the upper piece 801 of the wire connection side lead 800 is bent and extended toward the upper center portion of the reflection surface 2 with the tip thereof being obliquely inclined from the root portion parallel to the longitudinal center line of the element mount side lead 700,
- the tip portion of the element mount side lead 700 has a shape located at a position close to the element mount portion 704 at the center.
- the bent base portion of the narrower upper piece 701a and the sub-piece 705 on one side of the element mount side lead 700 is fitted into the groove 501 at the upper center position on one side of the support 600 and the groove 502 at the side position, respectively.
- a wide vertical piece 702a is along the side surface of the support 600, and a wide lower piece 703a is in contact with the bottom surface of the support 600.
- the bent base portion of the narrow upper piece 701b on the opposite side of the element mount side lead 700 is fitted into the groove 4 at the upper center position on the opposite side of the support 600, and the wide vertical piece outside the groove 4 of the support 600.
- 702 b is along the side surface of the support body 600, and the wide lower piece 703 b is in contact with the bottom surface of the support body 600.
- bent base portion of the bent upper piece 801 of the other wire connection side lead 800 is fitted into a groove 503 at a side position on one side of the support body 600, and a wide vertical piece 802 is supported outside the groove 503 of the support body 600.
- a wide lower piece 803 is in contact with the bottom surface of the support body 600 along the side surface of the body 600.
- the support member 600 is formed from the upper surface side of the fitting portion of the upper pieces 701 a, 701 b, 801 and the fitting portion of the sub-piece 705.
- the step portion is filled with a small UV curable resin so as to block the step up to the upper edge surface and cured to form the weirs 11, 121, 122, 123.
- the upper pieces 701a, 701b, 801 of the leads 700, 800 respectively.
- the bending base of the sub-piece 705 is fixed.
- a transparent resin 13 such as a transparent epoxy resin or a transparent silicone resin such as a cationic polymerization type transparent epoxy resin described in, for example, Japanese Patent No.
- Patent Document 2 Patent Document 2
- the upper piece 701a, 701b, 801 of the pair of leads 700, 800 and the sub piece 705, the light emitting element 9, and the wire 10 are transparent. It is fixed in a state where it is buried in the resin 13.
- the reflection type diode 1B As shown in FIG. 9, in the reflection type light emitting diode 1B having the above-described configuration, the reflection type diode 1B is placed on a substrate (not shown), and the lower pieces 703a, 703b, and 803 of the leads 700 and 800 on both sides of the bottom portion. Connect to the positive and negative terminals with solder and fix. In this mounted state, by energizing those plus terminals and minus terminals, the light emitting element 9 is energized through the leads 700 and 800 on both sides to emit light. Most of the light from the light emitting element 9 goes downward as shown by an arrow line in FIG.
- a manufacturing method of the reflective light emitting diode 1B having the above structure will be described with reference to FIG. 10 and FIGS. 4 to 6 referred to in the description of the manufacturing method of the first embodiment.
- a highly conductive material as shown in FIG. 10 for example, containing 98% to 99% of copper (Cu) as a main component, including some iron (Fe) and sulfur (S), and 2
- a thin plate having a silver plating of ⁇ 6 ⁇ m is used as a material, and a plurality of pairs of element mount side leads 700 and wire connection side leads 800 are arranged side by side by etching or punching as shown in FIG.
- the formed lead frame 200 is used.
- the shape of the element mount side lead 700 is linear, narrow upper pieces 701a and 701b, wide vertical pieces 702a and 702b, wide lower pieces 703a and 703b, element mount portion 704, sub-piece 705, and bulging portion 706. Each part is formed.
- a line passing through the center of the portion that becomes the upper piece of the narrow width is defined as a longitudinal center line C.
- the portions of the element mount side lead 700 that become the wide vertical piece 702b and the wide lower piece 703b are formed symmetrically with respect to the center line C.
- the shape of the wire connection side lead 800 is a narrow upper piece 801 that is bent from a root portion parallel to the center line C and extends obliquely toward a portion that becomes the element mount portion 704 of the element mount side lead 700, and a wide vertical width.
- the part which becomes each piece 802 and the wide lower piece 803 is formed.
- bending stress is applied to a portion corresponding to the boundary between the portion that becomes the vertical pieces 702 a, 702 b, and 802 and the portion that becomes the lower pieces 703 a, 703 b, and 803 of the element mount side lead 700 and the wire connection side lead 800.
- a stress relief hole may be formed to relieve the stress.
- flat elliptical holes 210 and 220 formed at positions corresponding to the end portions of the lower portions 703a, 703b, and 803 of the element mount side lead 700 and the wire connection side lead 800, respectively. This is for reducing the cutting resistance when cutting the fracture lines 230 and 240.
- the light emitting element 9 is mounted on each pair of leads 700 and 800, and wire bonding is performed.
- a wire bonding step a step of forming the reflecting surface 2 on the support 600 side, a step of forming grooves 4, 501 to 503 in the wall 3 around the support 600, and a pair of lead frames 200
- the leads 700 and 800 are attached to the support 600, and the weirs 11 and 121 to 123 are formed in the grooves 4, 501 to 503, respectively, and the resin is filled in the support 600 and hardened.
- the process of fixing 800, the process of bending the leads 700 and 800, etc. are the same as the processes shown in FIGS. 4 to 6 described in the first embodiment.
- the upper pieces 701a and 701b of the element mount side lead 700 are extended from one side to the opposite side of the upper edge of the support 600.
- the wide vertical pieces 702a and 702b are exposed on each of the one side surface and the opposite side surface of the support 600, in addition to achieving the same effect as the first embodiment,
- the heat dissipating area can be made wider than in the first and second embodiments, and when a current of the same magnitude flows, the temperature rise can be suppressed, and the current is passed until the temperature rises to an allowable temperature. In the case of emitting light 9, since a larger current can be passed, the luminance can be improved.
- the reflective light emitting diode 1C of the present embodiment has a parabolic concave reflecting surface 2 on the upper surface portion, and grooves 451, 452, and 453 at the upper center of one side of the surrounding wall portion 3 and the left and right three locations. And a rectangular parallelepiped support body 650 having grooves 551, 552, and 553 formed at three locations on the opposite side.
- An element mount side lead 750 and a wire connection side lead 850 are installed above the reflecting surface 2 of the support 650 so as to be bent in a U-shape in opposite directions.
- the element mount side lead 750 is disposed above the reflecting surface 2, and has narrow upper pieces 751 a and 751 b that are bent in a U-shape that crosses from one wall surface to the other wall surface of the support 650, and the support 650. It is composed of wide vertical pieces 752a and 752b arranged along both the wall side surface and the bottom surface, and wide lower pieces 753a and 753b connected to the vertical pieces 752a and 752b.
- the wide vertical pieces 752a and 752b on both sides of the element mount side lead 750 are formed with sub-pieces 755a and 755b extending horizontally in parallel with the narrow upper pieces 751a and 751b, respectively.
- bulged portions 756a and 756b are formed at the tips of the sub-pieces 755a and 755b, respectively.
- the wire connection side lead 850 opposed to the element mount side lead 750 is similarly composed of narrow upper pieces 851a and 851b, wide vertical pieces 852a and 852b, and wide lower pieces 853a and 853b. Yes.
- the light emitting element 9 is disposed on the element mount portion 754 formed at the connecting portion of the upper pieces 751a and 751b of the element mount side lead 700, and is positioned substantially in the upper middle portion of the reflecting surface 2.
- the wire 10 is connected between the light emitting element 9 on the element mount portion 754 and the wire bonding portion 854 formed at the connecting portion of the upper pieces 851a and 851b of the wire connection side lead 850.
- the bent bases of the narrow upper piece 751a and the sub-piece 755a on one side of the element mount side lead 750 are fitted into the groove 551 at the upper central position and the groove 552 at the lateral position on one side of the support 650, respectively.
- the wide vertical piece 752 a is along the side surface of the support 650, and the wide lower piece 753 a is in contact with the bottom surface of the support 650.
- the bent base portion of the narrow upper piece 751b and the sub piece 755b on the opposite side of the element mount side lead 750 is fitted into the groove 451 at the upper center position and the groove 452 at the side position on the opposite side of the support 650, respectively. Further, outside the grooves 451 and 452 of the support body 650, the wide vertical piece 752b is along the side surface of the support body 650, and the wide lower piece 753b is in contact with the bottom surface of the support body 650.
- bent bases of the bent upper pieces 851a and 851b of the other wire connection side lead 850 are fitted into the grooves 453 and 553 on one side of the support body 650 and the opposite sides thereof, and the groove 453 of the support body 650 is placed.
- wide vertical pieces 852a, 852b are along the side surface of the support 650, and wide lower pieces 853a, 853b are in contact with the bottom surface of the support 650.
- each of the grooves 451 to 453 and 551 to 553 of the support 650 the upper surfaces of the fitting portions of the upper pieces 751a, 751b, 851a, and 851b of the pair of leads 750 and 850 and the fitting portions of the sub pieces 755a and 755b.
- a small UV curable resin is filled in the step portion so as to block the step from the side to the upper edge surface of the support 650 and cured to form the weirs 111 to 113 and 121 to 123, and at the same time above the leads 750 and 850, respectively.
- the bent bases of the pieces 751a, 751b, 851a, 851b and the sub-pieces 755a, 755b are fixed.
- a transparent resin 13 such as a transparent epoxy resin such as a cationic polymerization type transparent epoxy resin described in Japanese Patent No. 4001347 (Patent Document 2) or a transparent resin 13 such as a transparent silicon resin is provided in the recess of the support 650.
- a transparent resin 13 such as a transparent epoxy resin such as a cationic polymerization type transparent epoxy resin described in Japanese Patent No. 4001347 (Patent Document 2) or a transparent resin 13 such as a transparent silicon resin is provided in the recess of the support 650.
- the reflection type light emitting diode 1C having the above-described configuration has the reflection type diode 1C placed on a substrate (not shown), and lower pieces 753a, 753b, 853a, leads 750, 850 on both sides of the bottom.
- Each of 853b is connected and fixed to a plus terminal and a minus terminal with solder.
- the light emitting element 9 is energized through the leads 750 and 850 on both sides to emit light. Most of the light from the light emitting element 9 goes downward as shown by an arrow line in FIG.
- a manufacturing method of the reflection type light emitting diode 1C having the above structure will be described with reference to FIG. 13 and FIGS. 4 to 6 referred to in the manufacturing method of the first embodiment.
- a thin plate having a silver plating of ⁇ 6 ⁇ m is used as a material, and a plurality of pairs of element mount side leads 750 and wire connection side leads 850 are arranged side by side by etching or punching as shown in FIG.
- the formed lead frame 250 is used.
- the shape of the element mount side lead 750 is a square shape with narrow upper pieces 751a and 751b, wide vertical pieces 752a and 752b, wide lower pieces 753a and 753b, an element mount portion 754, sub-pieces 755a and 755b, Portions that are respectively bulged portions 756a and 756b are formed.
- a line passing through the center of the portion to be the element mount portion 754 is a longitudinal center line C.
- the shape of the wire connection side lead 850 is a dogleg shape opposite to the element mount side lead 750, and has narrow upper pieces 851a and 851b, wide vertical pieces 852a and 852b, wide lower pieces 853a and 853b, wires A portion to be each land portion 854 is formed.
- a stress relief hole may be formed for relaxing the bending stress.
- flat elliptical holes 251 formed at positions corresponding to the end portions of the lower portions 753a, 753b, 853a, 853b of the element mount side lead 750 and the wire connection side lead 850, respectively.
- Reference numeral 252 is for reducing the cutting resistance when cutting the broken lines 261 and 262.
- the light emitting element 9 is mounted on each pair of leads 750 and 850, and wire bonding is performed.
- a wire bonding step a step of forming the reflecting surface 2 on the support 650 side, a step of forming grooves 451 to 453 and 551 to 553 in the wall 3 around the support 650, and each of the lead frames 250
- a pair of leads 750 and 850 are attached to the support 650, and the weirs 111 to 113 and 121 to 123 are formed in the grooves 451 to 453 and 551 to 553, respectively, and the resin 13 is filled in the support 650.
- the steps of hardening and fixing both leads 750 and 850, the step of bending the leads 750 and 850, etc. are the same as the steps shown in FIGS. 4 to 6 described in the first embodiment.
- the upper pieces 751a and 751b of the element mount side lead 750 are arranged so that the upper edge of the support 650 extends from one side to the opposite side.
- the wide vertical pieces 752a and 752b are exposed on each of the one side surface and the opposite side surface of the support 650, and the upper pieces 851a and 851b of the wire connection side lead 850 are similarly used as the support.
- the heat radiation area can be made wider than that of the first and second embodiments, and the temperature rise is suppressed when the same current flows.
- Rukoto can, also, it is possible to improve the luminance in order to be able is to flow a larger current in the case where the light emitting elements 9 by applying a current to rise to an acceptable temperature.
- the present invention has been described according to the first to fourth embodiments. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
図1は、本発明の第1の実施の形態の反射型発光ダイオード1を示している。この反射型発光ダイオード1は、上面部に放物曲面形状の反射面2を有し、周囲の壁部3の一辺の上部に溝4が形成され、対向辺の上部に溝5が形成された直方体状の支持体としての凹状ケース6と、この凹状ケース6の反射面2の上方を横切り、当該凹状ケース6の壁側面及び底面に沿うように狭幅の上片7a、広幅の垂直片7b、広幅の下片7cが折り曲げられて形成されている素子マウント側リード7と、この素子マウント側リード7と対置され、同様に狭幅の上片8a、広幅の垂直片8b、広幅の下片8cが折り曲げられて形成されているワイヤ接続側リード8と、素子マウント側リード7の上片7aのケース中心側先端部に搭載された発光素子9とから構成されている。発光素子9にはワイヤ10の一端が接続され、ワイヤ10の他端はワイヤ接続側リード8の上片8aの先端部に接続されている。
図7は第2の実施の形態の反射型発光ダイオード1Aを示している。本実施の形態の反射型発光ダイオード1Aは、1対のリード7,8それぞれの狭幅の上片7a,8aの側縁に側方に延出する翼片7d,8dを形成したことを特徴としている。尚、その他の構成、また製造方法については第1の実施の形態と同様である。
本発明の第3の実施の形態の反射型発光ダイオード1B及びその製造方法について、図8~図10を参照して説明する。本実施の形態の反射型発光ダイオード1Bは、上面部に放物凹面状の反射面2を有し、周囲の壁部3の一辺の上部中央に溝4が形成され、対向辺の上部3箇所に溝501,502,503が形成された直方体状の支持体600と、この支持体600の反射面2の上方を一方の壁面から他方の壁面まで横切り、当該支持体600の両方の壁側面及び底面に沿うように、狭幅の上片701a,701b、広幅の垂直片702a,702b、広幅の下片703a,703bが折り曲げられて形成されている素子マウント側リード700と、この素子マウント側リード700と対置され、同様に狭幅の上片801、広幅の垂直片802、広幅の下片803が折り曲げられて形成されているワイヤ接続側リード800と、素子マウント側リード700の上片701a,701bの中央接続部に形成された素子マウント部704に搭載された発光素子9とから構成されている。尚、発光素子9にはワイヤ10の一端が接続され、ワイヤ10の他端はワイヤ接続側リード800の上片801の先端部に接続されている。
本発明の第4の実施の形態の反射型発光ダイオード1C及びその製造方法について、図11~図13を参照して説明する。本実施の形態の反射型発光ダイオード1Cは、上面部に放物凹面形状の反射面2を有し、周囲の壁部3の一辺の上部中央と左右それぞれの3箇所に溝451,452,453が形成され、対向辺の上部3箇所に溝551,552,553が形成された直方体状の支持体650を備えている。そして、この支持体650の反射面2の上方にそれぞれ反対向きにくの字型に屈曲するように素子マウント側リード750とワイヤ接続側リード850が設置されている。
2 反射面
3 壁部
4,451~453 溝
5,501~503,551~553 溝
6 凹状ケース
600,650 支持体
7,700,750 素子マウント側リード
7a,701a,701b,751a,751b 上片
7b,702a,702b,751a,751b 垂直片
7c,703a,703b,751a,751b 下片
8,800,850 ワイヤ接続側リード
8a,801,851a,851b 上片
8b,802,852a,852b 垂直片
8c,803,853a,853b 下片
9 発光素子
10 ワイヤ
Claims (9)
- 内部に凹面状の反射面を有する支持体と、
前記支持体の前記反射面の上方中央部から一方の壁面に向けて水平に直線状に延びる素子マウント側リードと、
前記支持体の前記反射面の上方中央部から他方の壁面に向けて水平に延びるワイヤ接続側リードと、
前記素子マウント側リードにおける前記支持体の前記反射面上方の中心側先端部に搭載された発光素子と、
前記発光素子と前記ワイヤ接続側リードにおける前記支持体の前記反射面上方の中心側先端部との間にボンディングされたワイヤとを備え、
前記素子マウント側リードの中心側先端部と前記ワイヤ接続側リードの中心側先端部とは、前記素子マウント側リードの長手方向延長線上の位置からずれた位置関係に置き、かつ両中心側先端部を近接させたことを特徴とする反射型発光ダイオード。 - 前記ワイヤ接続側リードは、前記壁上面部分に位置する根本部をその中心線が前記素子マウント側リードの中心線と一致する中心線を持つ直線状にし、前記根本部から前記中心側先端部に至る中間部を前記根本部から斜め前方に屈曲するように延ばし、前記中心側先端部は、前記素子マウント側リードの中心側先端部とその中心線に対して垂直な方向にて近接する位置に位置する形状にしたことを特徴とする請求項1に記載の反射型発光ダイオード。
- 前記素子マウント側リード、ワイヤ接続側リードそれぞれは、前記支持体の外側面に沿って折り曲げられていることを特徴とする請求項1又は2に記載の反射型発光ダイオード。
- リード素材の金属板を所定のパターンに加工して素子マウント側リードとワイヤ接続側リードを、それらの先端部分同士が共通の中心線上からずれた方向において近接するように形成し、
前記素子マウント側リードの先端部に発光素子をマウントし、
前記発光素子と前記ワイヤ接続側リードの先端部との間にワイヤをボンディングし、
内部に凹面状の反射面を有する支持体に対して、前記反射面の開口部側に前記素子マウント側リードとワイヤ接続側リードとのそれぞれを前記発光素子が当該反射面の中央上方にて当該反射面に向く姿勢で載置し、
前記支持体の凹状部内に透明樹脂を充填して硬化させて前記素子マウント側リードとワイヤ接続側リードとの先端部分それぞれを支持体内に固定し、
前記素子マウント側リードとワイヤ接続側リードとのそれぞれの前記支持体の外側に出ている部分に曲げ加工を施して当該支持体の外側面に沿うように下側に折り曲げ、前記素子マウント側リードとワイヤ接続側リードとのそれぞれの後端部分を支持体の底面に接するように内側に折り曲げることを特徴とする反射型発光ダイオードの製造方法。 - 前記素子マウント側リードは、その先端部分から中間部分、後端部分までを1つの中心線に対して両側が対称になる形状に形成し、
前記ワイヤ接続側リードは、その後端部分から中間部分までを前記素子マウント側リードの中心線と共通する中心線に対して両側が対称になる形状にし、該中間部分から先の先端部分に至るまでの部分を前記共通の中心線から外れるように屈曲させ、前記先端部分を前記素子マウント側リードの先端部分に対して前記共通の中心線に対して垂直な方向において近接する形状に形成することを特徴とする請求項4に記載の反射型発光ダイオードの製造方法。 - 内部に凹面状の反射面を有する支持体と、
前記支持体の前記反射面の上方中央部から一方の壁面と他方の壁面との両方向に水平に直線状に延びる素子マウント側リードと、
前記支持体の前記反射面の上方中央部から前記一方の壁面に向けて水平に延びるワイヤ接続側リードと、
前記素子マウント側リードにおける前記支持体の前記反射面上方の中心部に搭載された発光素子と、
前記発光素子と前記ワイヤ接続側リードにおける前記支持体の前記反射面上方の中心側先端部との間にボンディングされたワイヤとを備え、
前記ワイヤ接続側リードの中心側先端部は、前記素子マウント側リードの長手方向中心線上の位置から外れた位置に置き、かつ両中心側先端部を近接させたことを特徴とする反射型発光ダイオード。 - リード素材の金属板を所定のパターンに加工して素子マウント側リードの中心部に対してワイヤ接続側リードの先端部が前記素子マウント側リードの長手方向の中心線上からずれた位置において前記素子マウント側リードの中心部に近接するように形成し、
前記素子マウント側リードの中心部に発光素子をマウントし、
前記発光素子と前記ワイヤ接続側リードの先端部との間にワイヤをボンディングし、
内部に凹面状の反射面を有する支持体に対して、前記反射面の開口部側に前記素子マウント側リードとワイヤ接続側リードとのそれぞれを前記発光素子が当該反射面の中央上方にて当該反射面に向く姿勢で載置し、
前記支持体の凹状部内に透明樹脂を充填して硬化させて前記素子マウント側リードとワイヤ接続側リードとの先端部分それぞれを支持体内に固定し、
前記素子マウント側リードとワイヤ接続側リードとのそれぞれの前記支持体の外側に出ている部分に曲げ加工を施して当該支持体の外側面に沿うように下側に折り曲げ、前記素子マウント側リードとワイヤ接続側リードとのそれぞれの後端部分を支持体の底面に接するように内側に折り曲げることを特徴とする反射型発光ダイオードの製造方法。 - 内部に凹面状の反射面を有する支持体と、
前記支持体の前記反射面の上方中央部から一方の壁面と他方の壁面との両方向に水平に延びる素子マウント側リードと、
前記支持体の前記反射面の上方中央部から一方の壁面と他方の壁面との両方向に向けて水平に延びるワイヤ接続側リードと、
前記素子マウント側リードにおける前記支持体の前記反射面上方の中心部に搭載された発光素子と、
前記発光素子と前記ワイヤ接続側リードにおける前記支持体の前記反射面上方の中心部との間にボンディングされたワイヤとを備え、
前記ワイヤ接続側リードの中心部は、前記素子マウント側リードの中心部に対して近接する位置に形成したことを特徴とする反射型発光ダイオード。 - リード素材の金属板を所定のパターンに加工して素子マウント側リードの中心部に対してワイヤ接続側リードの中心部が近接するように形成し、
前記素子マウント側リードの中心部に発光素子をマウントし、
前記発光素子と前記ワイヤ接続側リードの中心部との間にワイヤをボンディングし、
内部に凹面状の反射面を有する支持体に対して、前記反射面の開口部側に前記素子マウント側リードとワイヤ接続側リードとのそれぞれを前記発光素子が当該反射面の中央上方にて当該反射面に向く姿勢で載置し、
前記支持体の凹状部内に透明樹脂を充填して硬化させて前記素子マウント側リードとワイヤ接続側リードとを共に支持体内に固定し、
前記素子マウント側リードとワイヤ接続側リードとのそれぞれの前記支持体の外側に出ている部分に曲げ加工を施して当該支持体の外側面に沿うように下側に折り曲げ、前記素子マウント側リードとワイヤ接続側リードとのそれぞれの後端部分を支持体の底面に接するように内側に折り曲げることを特徴とする反射型発光ダイオードの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010522643A JP5336489B2 (ja) | 2008-08-01 | 2009-04-03 | 反射型発光ダイオード |
KR1020117002449A KR101217949B1 (ko) | 2008-08-01 | 2009-04-03 | 반사형 발광 다이오드 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008200161 | 2008-08-01 | ||
JP2008-200161 | 2008-08-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010013518A1 true WO2010013518A1 (ja) | 2010-02-04 |
Family
ID=41610228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/056964 WO2010013518A1 (ja) | 2008-08-01 | 2009-04-03 | 反射型発光ダイオード |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5336489B2 (ja) |
KR (1) | KR101217949B1 (ja) |
WO (1) | WO2010013518A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010106963A1 (ja) * | 2009-03-16 | 2010-09-23 | 株式会社 パールライティング | 反射型発光ダイオード及び反射型発光ダイオード発光装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1041551A (ja) * | 1996-07-26 | 1998-02-13 | Toyoda Gosei Co Ltd | 発光ダイオードランプ組立体 |
JP2001230451A (ja) * | 2000-02-15 | 2001-08-24 | Sharp Corp | 発光ダイオード |
JP2002223006A (ja) * | 2001-01-26 | 2002-08-09 | Toyoda Gosei Co Ltd | 反射型発光ダイオード |
JP2003008079A (ja) * | 2001-06-27 | 2003-01-10 | Toyoda Gosei Co Ltd | 反射型光学デバイス及びその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10335706A (ja) * | 1997-05-30 | 1998-12-18 | Toyoda Gosei Co Ltd | 発光ダイオードランプ |
KR100665181B1 (ko) * | 2005-05-31 | 2007-01-09 | 삼성전기주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
-
2009
- 2009-04-03 KR KR1020117002449A patent/KR101217949B1/ko active IP Right Grant
- 2009-04-03 WO PCT/JP2009/056964 patent/WO2010013518A1/ja active Application Filing
- 2009-04-03 JP JP2010522643A patent/JP5336489B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1041551A (ja) * | 1996-07-26 | 1998-02-13 | Toyoda Gosei Co Ltd | 発光ダイオードランプ組立体 |
JP2001230451A (ja) * | 2000-02-15 | 2001-08-24 | Sharp Corp | 発光ダイオード |
JP2002223006A (ja) * | 2001-01-26 | 2002-08-09 | Toyoda Gosei Co Ltd | 反射型発光ダイオード |
JP2003008079A (ja) * | 2001-06-27 | 2003-01-10 | Toyoda Gosei Co Ltd | 反射型光学デバイス及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101217949B1 (ko) | 2013-01-02 |
JP5336489B2 (ja) | 2013-11-06 |
JPWO2010013518A1 (ja) | 2012-01-05 |
KR20110025999A (ko) | 2011-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101920915B1 (ko) | 방열구조를 갖는 반도체 패키지 | |
US9461207B2 (en) | Light emitting device, and package array for light emitting device | |
US9013030B2 (en) | Leadframe, semiconductor package including a leadframe and method for producing a leadframe | |
KR101602982B1 (ko) | 리드 프레임 기판과 그 제조 방법, 및 반도체 장치 | |
JP2007329516A (ja) | 半導体発光装置 | |
CN103107272A (zh) | 基板、发光装置、以及基板的制造方法 | |
JPWO2009130743A1 (ja) | 光素子用パッケージ、半導体発光装置および照明装置 | |
JP6197297B2 (ja) | リードフレーム、樹脂付きリードフレーム、リードフレームの多面付け体、樹脂付きリードフレームの多面付け体、光半導体装置、光半導体装置の多面付け体 | |
KR100610275B1 (ko) | 고출력 발광 다이오드 패키지 및 그 제조방법 | |
JP2007214474A (ja) | エッジライトとその製造方法 | |
US9142528B2 (en) | Semiconductor device with an interlocking structure | |
JP5336489B2 (ja) | 反射型発光ダイオード | |
JP2009152227A (ja) | 反射型発光ダイオード | |
WO2008139981A1 (ja) | 発光装置および発光装置用パッケージ集合体 | |
JPH11112036A (ja) | 面実装半導体装置 | |
JP2002280479A (ja) | 表面実装型の半導体装置 | |
JP2009152228A (ja) | 反射型発光ダイオード | |
JP5630436B2 (ja) | 反射型発光ダイオード及び反射型発光ダイオード発光装置 | |
JP2007067452A (ja) | 半導体発光装置 | |
JP4389263B2 (ja) | 半導体発光装置の製法 | |
WO2009145056A1 (ja) | 反射型発光ダイオード | |
JP2009283829A (ja) | 反射型発光ダイオード及びその製造方法 | |
JP4408931B2 (ja) | 半導体発光装置 | |
JP2007329515A (ja) | 半導体発光装置 | |
JP4994883B2 (ja) | 樹脂封止型半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09802763 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010522643 Country of ref document: JP |
|
ENP | Entry into the national phase |
Ref document number: 20117002449 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09802763 Country of ref document: EP Kind code of ref document: A1 |