WO2010003386A3 - 发光元件及其封装结构 - Google Patents

发光元件及其封装结构 Download PDF

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Publication number
WO2010003386A3
WO2010003386A3 PCT/CN2009/072729 CN2009072729W WO2010003386A3 WO 2010003386 A3 WO2010003386 A3 WO 2010003386A3 CN 2009072729 W CN2009072729 W CN 2009072729W WO 2010003386 A3 WO2010003386 A3 WO 2010003386A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting device
layer
emitting structure
light emitting
Prior art date
Application number
PCT/CN2009/072729
Other languages
English (en)
French (fr)
Other versions
WO2010003386A2 (zh
Inventor
宣融
李兆伟
胡鸿烈
朱慕道
徐志豪
蔡政达
Original Assignee
财团法人工业技术研究院
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 财团法人工业技术研究院 filed Critical 财团法人工业技术研究院
Priority to US13/383,211 priority Critical patent/US20120168801A1/en
Priority to CN2009801604769A priority patent/CN102473795A/zh
Priority to EP09793861A priority patent/EP2453486A2/en
Priority to PCT/CN2009/072729 priority patent/WO2010003386A2/zh
Publication of WO2010003386A2 publication Critical patent/WO2010003386A2/zh
Publication of WO2010003386A3 publication Critical patent/WO2010003386A3/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)

Abstract

一种发光元件封装结构包括一承载器、至少一发光元件以及一磁性元件。磁性元件有助于总体出光效率的提升。
PCT/CN2009/072729 2009-07-10 2009-07-10 发光元件及其封装结构 WO2010003386A2 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/383,211 US20120168801A1 (en) 2009-07-10 2009-07-10 Light emitting device and package structure thereof
CN2009801604769A CN102473795A (zh) 2009-07-10 2009-07-10 发光元件及其封装结构
EP09793861A EP2453486A2 (en) 2009-07-10 2009-07-10 Light-emitting device and packaging structure thereof
PCT/CN2009/072729 WO2010003386A2 (zh) 2009-07-10 2009-07-10 发光元件及其封装结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2009/072729 WO2010003386A2 (zh) 2009-07-10 2009-07-10 发光元件及其封装结构

Publications (2)

Publication Number Publication Date
WO2010003386A2 WO2010003386A2 (zh) 2010-01-14
WO2010003386A3 true WO2010003386A3 (zh) 2010-06-03

Family

ID=41507467

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2009/072729 WO2010003386A2 (zh) 2009-07-10 2009-07-10 发光元件及其封装结构

Country Status (4)

Country Link
US (1) US20120168801A1 (zh)
EP (1) EP2453486A2 (zh)
CN (1) CN102473795A (zh)
WO (1) WO2010003386A2 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9508902B2 (en) * 2005-02-21 2016-11-29 Epistar Corporation Optoelectronic semiconductor device
CN102593295B (zh) * 2011-01-14 2015-03-25 晶元光电股份有限公司 发光元件
KR20130000218A (ko) * 2011-06-22 2013-01-02 삼성디스플레이 주식회사 자성체 물질을 함유한 전극 및 상기 전극을 갖는 유기발광소자
CN102903829B (zh) * 2011-07-26 2015-01-07 展晶科技(深圳)有限公司 发光二极管光源装置
US9847372B2 (en) * 2011-12-01 2017-12-19 Micron Technology, Inc. Solid state transducer devices with separately controlled regions, and associated systems and methods
TWI549278B (zh) * 2012-03-12 2016-09-11 晶元光電股份有限公司 發光二極體元件
DE102012102910B4 (de) * 2012-04-03 2016-09-22 Novaled Ag Vertikaler organischer Transistor und Verfahren zum Herstellen
TW201411903A (zh) * 2012-09-07 2014-03-16 Ind Tech Res Inst 無線電力傳輸之可裁切有機發光二極體光源裝置
DE102012112796B4 (de) * 2012-12-20 2019-09-19 Novaled Gmbh Vertikaler organischer Transistor, Schaltungsanordnung und Anordnung mit vertikalem organischen Transistor sowie Verfahren zum Herstellen
US9530934B1 (en) * 2015-12-22 2016-12-27 Epistar Corporation Light-emitting device
US10199542B2 (en) * 2015-12-22 2019-02-05 Epistar Corporation Light-emitting device
US20190296188A1 (en) * 2017-01-10 2019-09-26 PlayNitride Display Co., Ltd. Micro light-emitting diode chip
CN112216742B (zh) * 2020-08-28 2023-03-14 华灿光电（浙江）有限公司 氮化镓基高电子迁移率晶体管外延片及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0983074A (ja) * 1995-09-13 1997-03-28 Nikon Corp 磁場を用いた発光方法、および、外部磁場を用いた波長可変発光装置
JPH09219564A (ja) * 1996-02-09 1997-08-19 Hitachi Ltd 光源装置及び光通信装置
CN1630106A (zh) * 2003-12-15 2005-06-22 洲磊科技股份有限公司 发光元件的电极结构
CN1945856A (zh) * 2001-10-30 2007-04-11 株式会社半导体能源研究所 半导体器件及其制造方法
KR20080108825A (ko) * 2007-06-11 2008-12-16 고려대학교 산학협력단 발광소자
CN101483214A (zh) * 2008-01-11 2009-07-15 财团法人工业技术研究院 发光装置
CN101577306A (zh) * 2008-05-09 2009-11-11 财团法人工业技术研究院 发光装置

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KR930009225B1 (ko) * 1989-09-05 1993-09-24 미쯔비시덴기 가부시끼가이샤 광자기 기록 매체, 광자기 기록 장치 및 광자기 기록 매체의 제조방법
JP2000133836A (ja) * 1998-10-22 2000-05-12 Japan Science & Technology Corp 波長可変発光素子及びその製造方法
TWI229354B (en) * 2003-12-31 2005-03-11 Via Tech Inc Capacitor pair structure for increasing the match thereof
US20060043400A1 (en) * 2004-08-31 2006-03-02 Erchak Alexei A Polarized light emitting device
KR100631969B1 (ko) * 2005-02-28 2006-10-11 삼성전기주식회사 질화물 반도체 발광소자
KR101232159B1 (ko) * 2006-06-12 2013-02-12 엘지디스플레이 주식회사 터널링 효과 박막 트랜지스터 및 그 제조 방법과 그를이용한 유기 전계발광 표시장치
US7816698B2 (en) * 2007-04-13 2010-10-19 Industrial Technology Research Institute Heat dissipation package for heat generation element
JP4930322B2 (ja) * 2006-11-10 2012-05-16 ソニー株式会社 半導体発光素子、光ピックアップ装置および情報記録再生装置
KR100998010B1 (ko) * 2008-04-28 2010-12-03 삼성엘이디 주식회사 발광소자 패키지 및 그 제조방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0983074A (ja) * 1995-09-13 1997-03-28 Nikon Corp 磁場を用いた発光方法、および、外部磁場を用いた波長可変発光装置
JPH09219564A (ja) * 1996-02-09 1997-08-19 Hitachi Ltd 光源装置及び光通信装置
CN1945856A (zh) * 2001-10-30 2007-04-11 株式会社半导体能源研究所 半导体器件及其制造方法
CN1630106A (zh) * 2003-12-15 2005-06-22 洲磊科技股份有限公司 发光元件的电极结构
KR20080108825A (ko) * 2007-06-11 2008-12-16 고려대학교 산학협력단 발광소자
CN101483214A (zh) * 2008-01-11 2009-07-15 财团法人工业技术研究院 发光装置
CN101577306A (zh) * 2008-05-09 2009-11-11 财团法人工业技术研究院 发光装置

Also Published As

Publication number Publication date
WO2010003386A2 (zh) 2010-01-14
CN102473795A (zh) 2012-05-23
EP2453486A2 (en) 2012-05-16
US20120168801A1 (en) 2012-07-05

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