WO2009142284A1 - Method for production of molded fluoride crystal article, optical member produced by the method, and optical device and ultraviolet ray washing device each comprising the optical member - Google Patents

Method for production of molded fluoride crystal article, optical member produced by the method, and optical device and ultraviolet ray washing device each comprising the optical member Download PDF

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Publication number
WO2009142284A1
WO2009142284A1 PCT/JP2009/059405 JP2009059405W WO2009142284A1 WO 2009142284 A1 WO2009142284 A1 WO 2009142284A1 JP 2009059405 W JP2009059405 W JP 2009059405W WO 2009142284 A1 WO2009142284 A1 WO 2009142284A1
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Prior art keywords
fluoride crystal
base material
crystal base
fluoride
temperature
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PCT/JP2009/059405
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French (fr)
Japanese (ja)
Inventor
美菜子 安住
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株式会社ニコン
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Priority to KR1020137007827A priority Critical patent/KR101394781B1/en
Priority to JP2010513063A priority patent/JP5251976B2/en
Priority to KR1020107027598A priority patent/KR101330974B1/en
Publication of WO2009142284A1 publication Critical patent/WO2009142284A1/en

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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F11/00Compounds of calcium, strontium, or barium
    • C01F11/20Halides
    • C01F11/22Fluorides
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/12Halides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02Heat treatment

Definitions

  • the present invention relates to a method for producing a fluoride crystal molded body for molding a fluoride crystal base material into a predetermined shape, an optical member provided with the fluoride crystal molded body produced by the method, and the optical member Optical device and ultraviolet cleaning device.
  • optical members made of fluorides such as calcium fluoride are used It is done. This optical member is often substantially formed of a single crystal.
  • single crystal growth techniques such as the Bridgman method and the Czochralski method are used.
  • Non-Patent Document 1 There is known a method of deforming a fluoride crystal base material at a temperature lower than the melting point.
  • Non-Patent Document 1 changes in optical properties and mechanical properties due to forging of lithium fluoride and calcium fluoride are evaluated.
  • a columnar calcium fluoride crystal base material is disposed between the upper ram and the lower ram in a pressure device, and heated at various temperatures in the range of 510 to 750 ° C. in a He gas atmosphere to obtain the upper ram and the lower ram It is disclosed that the fluoride crystals are deformed by pressing between them. It is also disclosed that lithium fluoride crystals are also forged by heating in the range of 300 to 600 ° C. using the apparatus. OPTICAL ENGINEERING, Vol. 18 No. 6, Nov.-Dec. 1979, P602-609
  • an object of the present invention is to provide a manufacturing method capable of easily producing a fluoride crystal molded body having a shape different from the fluoride crystal base material and having excellent optical properties from the fluoride crystal base material. It is to be.
  • a further object of the present invention is to provide an optical member which is produced by such a production method and provided with a fluoride crystal molded article having excellent optical properties.
  • Still another object of the present invention is to provide an optical device or an ultraviolet cleaning device using such an optical member.
  • the deformation amount per unit time in the load direction of the fluoride crystal base material is maximum
  • T is the temperature at which temperature is T and the pressure applied to the fluoride crystal base material at that temperature T is P
  • the fluoride crystal base material is at least the temperature T and the fluoride crystal base material is lower than the melting point
  • a method of producing a fluoride crystal molded body which is characterized in that the fluoride crystal base material is deformed while being heated at a temperature lower than the melting point and pressurized to recrystallize.
  • a method of producing a fluoride crystal molded body is provided.
  • an optical member comprising a fluoride crystal molded article produced by the production method of the present invention.
  • an optical device in which the optical member is disposed in an optical path through which vacuum ultraviolet light having a wavelength of 125 nm to 200 nm is transmitted.
  • an ultraviolet cleaning apparatus for irradiating vacuum cleaning light having a wavelength of 125 nm to 200 nm through the window material to the member to be cleaned, wherein the optical member is used as the window material.
  • An ultraviolet cleaning device is provided.
  • the fluoride crystal base material is deformed while being pressurized and heated to be recrystallized, it is possible to maintain the optical properties of the fluoride crystal base material while maintaining the optical properties of the fluoride crystal base material It can be molded into different desired shapes. Further, in the manufacturing method of the present invention, recrystallization can be reliably generated because heating and pressing are performed under temperature conditions where the deformation amount (deformation speed) of the fluoride crystal base material is maximum.
  • the optical member of the present invention is formed of the fluoride crystal molded body manufactured by the above-described manufacturing method, it has excellent optical characteristics. Moreover, since it shape
  • the optical member of the present invention is disposed in the optical path through which vacuum ultraviolet light with a wavelength of 125 nm to 200 nm is transmitted, the transmittance of vacuum ultraviolet light is high, and uses of vacuum ultraviolet light Preferred.
  • the ultraviolet cleaning device of the present invention uses the optical member of the present invention as a window material, it can be excellent in optical characteristics such as transmittance, and sufficiently secure the area of the transmission window. Therefore, it is suitable for efficient light cleaning of a large member.
  • Example and a comparative example it is a figure which shows the temperature change and deformation amount at the time of heating-pressing a fluoride crystal molded object.
  • the fluoride crystal molded object obtained in the Example and the comparative example is shown, (a) is a top view, (b) is a side view.
  • FIG. 8 is a diagram connecting points between the maximum pressure and the maximum temperature during heat and pressure molding of FIG. 7 by a straight line.
  • FIG. 16 is a top view of a single crystal base material before forming in Example 5; The example which used the fluoride crystal molded object for the objective lens of the telescope is shown.
  • the fluoride crystal molded body manufactured according to this embodiment is a molded body that can be used as various optical members for the purpose of transmitting light such as vacuum ultraviolet light, and has a flat plate shape, a spherical or aspherical convex shape or It has an appropriate shape such as a concave shape.
  • the fluoride crystal molded body In order to manufacture the fluoride crystal molded body, it is manufactured by molding a preformed fluoride crystal base material by heating and pressing.
  • the fluoride crystal base material is, for example, a crystal of calcium fluoride, magnesium fluoride, barium fluoride, lanthanum fluoride, cerium fluoride, yttrium fluoride or the like.
  • Calcium fluoride is preferred because it is excellent in optical characteristics such as transmittance to vacuum ultraviolet light.
  • the fluoride crystal base material is provided in advance with optical characteristics such as transmittance required for a molded article to be produced. It is because it is not easy to improve the optical characteristics in the molding process.
  • the fluoride crystal base material may be either a single crystal or a polycrystal, but is preferably a single crystal to obtain excellent optical properties.
  • the fluoride crystal base material is a single crystal substantially as long as it is a single crystal, and it may slightly contain twin crystals and the like.
  • the single crystal can be obtained, for example, using a single crystal growth technique such as the Bridgman method or the Czochralski method.
  • the forming of the fluoride crystal base material is performed at a temperature lower than the melting point.
  • the melting point of calcium fluoride is reported to be about 1350 ° C.
  • the liquid phase is generated by heating to a temperature higher than the melting point, new crystals are randomly formed when the liquid phase is solidified, and the optical properties of the obtained molded product are significantly deteriorated.
  • this forming by heating and pressurizing the fluoride crystal base material, deformation due to recrystallization is started as it is in the solid phase, and then it is further deformed to a predetermined shape.
  • the deformation by recrystallization is to deform while recrystallizing.
  • crystal materials such as metals and ceramics
  • they are rapidly softened and deformed crystals are separated and separated into polygonal fine grains.
  • mechanical processing such as rolling is performed, dislocations increased thereby are also extinguished by the heating, and the crystal grains become stable without internal strain (internal stress). This phenomenon is called recrystallization.
  • recrystallization is performed under pressure at a predetermined temperature. That is, in the present invention, the fluoride crystal base material is vacuumed by recrystallization while pressurizing the fluoride crystal base material at a predetermined temperature or higher, instead of recrystallizing the fluoride crystal base material only by heating. It can be deformed without deteriorating optical characteristics such as light transmittance in the ultraviolet region. As in the examples described later, the higher the pressure, the higher the deformation rate at a lower temperature, and so on, so it can be inferred that the temperature sufficient for initiating deformation due to recrystallization has a correlation with the pressure.
  • deformation due to recrystallization is started by combining temperature and pressure.
  • it is sufficient to start deformation at a temperature and pressure at which deformation due to recrystallization surely occurs.
  • the fluoride crystal base material is deformed under the condition that at least one of temperature and pressure is too low, it is considered that deformation due to slippage of the crystal structure occurs, not deformation due to recrystallization.
  • deformation due to slippage occurs, lattice defects occur in the crystal as the deformation occurs, and optical characteristics such as transmittance decrease.
  • the temperature and pressure at which deformation due to recrystallization reliably occurs can be determined as follows. That is, when the fluoride crystal base material is heated at a constant temperature rising rate while applying a constant load, the deformation amount per unit time in the load direction of the fluoride crystal base material (change in length per unit time in the load direction)
  • the temperature T (hereinafter referred to as “maximum deformation temperature” as appropriate) at which the amount is a maximum value (hereinafter referred to as “maximum deformation speed” as appropriate) is measured. At this maximum deformation temperature, recrystallization of the fluoride crystal base material is considered to occur for the following reason.
  • the fluoride crystal base material is deformed through recrystallization can be verified by observing the crystal orientation after deformation.
  • the surface of the single crystal fluoride crystal base material before deformation as shown in FIG. 11 has a large number of grain boundaries recognized as shown in FIG. 9A due to the occurrence of deformation through recrystallization.
  • the crystal orientation of the crystal grain specified by the Laue method is added in FIG. 9 (a)
  • recrystallization has occurred by observing the molded body in the fluoride crystal base material.
  • the fluoride crystal base material is deformed only by sliding without recrystallization, subgrain boundaries generated by sliding bands and crystal rotation are observed but no grain boundaries are observed. .
  • the fluoride crystal base material In order to heat and pressurize the fluoride crystal base material to such temperature T and pressure P, the fluoride crystal base material is heated and heated, for example, because it is easy to prevent the failure of the fluoride crystal base material. It is preferable to start pressurization after that, and in particular, it is preferable to heat up to the temperature T and then start pressurization.
  • the temperature T and the pressure P are reached at the start of the deformation. This is because deformation due to slippage of the crystal structure can be prevented, and excellent optical characteristics can be easily obtained.
  • the deformation due to recrystallization After the deformation due to recrystallization is started, it is further deformed to a predetermined shape. At this time, after deformation due to recrystallization is started, it is preferable to continue applying pressure as it is to deform to a predetermined shape. After the deformation due to recrystallization is started, as long as the deformation due to pressure is continued, the optical characteristics of the obtained molded article can be easily secured sufficiently high. The reason for this is not clear, but the deformation due to recrystallization does not occur simultaneously with the deformation due to the slip of the crystal structure, and the deformation due to recrystallization continues or the slip occurs even if the slip and the recrystallization occur simultaneously. It is inferred that the resulting portion of is to replace the crystal grains by recrystallization.
  • a forming apparatus as shown in FIG. 1 in order to form such a fluoride crystal base material, for example, a forming apparatus as shown in FIG. 1 can be used.
  • a molding die 13 capable of containing and pressurizing the fluoride crystal base material 11 is disposed in a chamber 10 made of a stainless steel container.
  • the mold 13 is made of graphite, and the cylindrical mold 15, the lower mold 17 closing one end opening of the cylindrical mold 15, and the other mold opening from the other end opening of the cylindrical mold 15 are accommodated in the internal space And a pressure die 19 arranged as possible.
  • the lower die 17 is supported by the support portion 23 via the support rod 21, and the pressure die 19 is connected to the pressure drive unit 27 via the pressure rod 25.
  • the surface on the pressure mold 19 side of the lower mold 17 and the surface on the lower mold 17 side of the pressure mold 19 face each other to constitute a pressure surface.
  • the mold 13 is accommodated in a heat insulating frame 31 made of a heat insulating material having air permeability.
  • the heating element 33 is disposed in the heat insulation frame 31 so that the inside of the chamber 10 can be heated, and the temperature detection unit 35 detects the temperature in the heat insulation frame 31 including the mold 13 and generates heat based on the detected temperature.
  • the heating of the body 33 can be precisely controlled.
  • the chamber 10 is airtight, and the support rod 21 and the pressure rod 25 are airtightly disposed by the airtight seal portions 23a and 27a so as to be penetrated.
  • An atmosphere gas introduction unit 37 and a vacuum evacuation unit 39 are connected to the chamber 10, and an inert gas can be introduced from the atmosphere gas introduction unit 37 and can be exhausted from the evacuation unit 39.
  • the mold 13 is made of graphite. It is preferable to use graphite having a high purity of 10 wtppm or less, particularly an ultrahigh purity of 2 wtppm or less, not graphite having a general purity of more than 10 wtppm as ash. This is because the penetration of the alkali metal and the alkaline earth metal element from the mold 13 into the obtained fluoride crystal molded body can be made shallow.
  • the alkali metal and alkaline earth metal elements that have permeated into the fluoride crystal molded body can be removed from the fluoride crystal molded body by removing the surface of the fluoride crystal molded body, but the mold 13 has an ash content of 10 wtppm or less
  • the thickness to be cut can be reduced to about 5 mm.
  • the fluoride crystal base material 11 is accommodated in the forming die 13.
  • the center of the lower mold 17 is locally abutted on the surface on the pressure mold 19 side and / or each central surface of the pressure mold 19 on the lower mold 17 side.
  • the mold 13 is placed in the heat insulation frame 31, the lower mold 17 is supported by the support rod 21, and the pressure rod 25 is connected to the pressure mold 19 to seal the chamber 10.
  • evacuation may be performed from the evacuation unit 39, evacuation may be performed, and molding may be started with the inside of the chamber 10 in a low pressure state, but preferably, inert gas is introduced from the atmosphere gas introducing unit 37 after evacuation. Make the inside an inert gas atmosphere.
  • the inert gas include nitrogen gas and helium gas.
  • thermoforming step Next, heating and pressure are applied while maintaining the atmosphere in the chamber 10 to deform the fluoride crystal base material 11.
  • a predetermined temperature and a predetermined pressure at which deformation due to recrystallization can be reliably generated are measured in advance, and such temperature and pressure are set. Based on the knowledge of the present inventor, the temperature (maximum deformation temperature) T and the pressure P at that time may be used to indicate the maximum deformation speed as described above.
  • the fluoride crystal base material 11 is heated to a predetermined temperature by heating the heating element 33 in the heat insulating frame 31 while detecting the temperature by the temperature detection unit 35. After the temperature rise, the temperature is maintained and pressurization is started. In pressing, with the lower mold 17 and the cylindrical mold 15 supported by the support portion 23 through the support rod 21, the pressure drive unit 27 moves the pressure mold 19 to the lower mold 17 side through the pressure rod 25. The compression is performed by maintaining a state in which a constant load is applied to the pressure mold 19.
  • the deformation is advanced by maintaining a state in which a constant load is applied to the pressing die 19.
  • the contact area between the pressure die 19 and the fluoride crystal base material 11 increases, so the pressure applied to the fluoride crystal base material 11 gradually decreases, but the deformation due to recrystallization is started
  • the pressure is continuously continued as it is to deform it into a predetermined shape. Once deformation by recrystallization is started, at the end of deformation, the pressure may not satisfy the conditions of deformation by recrystallization.
  • the material used as the fluoride crystal base material 11 has a low content of impurities, such as a single crystal, Cr, Mn, Fe, Co, and the like contained in the obtained fluoride crystal molded body
  • concentrations of Ni, Ba, Zn, La, Ce, and Pb can be 50 wtppb or less.
  • an optical member can be manufactured by lapping both surfaces with # 1200 abrasive grains in a large-sized Oscar-type polishing machine, followed by polishing with cerium oxide, and thereafter performing washing and drying. it can.
  • the grain size of the crystal grains excluding the mother crystal which is the crystal structure of the fluoride crystal base material 11 before deformation is uniform with a diameter of 20 mm or less.
  • the initial transmission per 10 mm thickness at a wavelength of 126 nm is 65% or more
  • the initial transmission per 10 mm thickness at a wavelength of 146 nm is 85% or more
  • / or the initial transmission per 10 mm thickness at a wavelength of 172 nm It has excellent optical properties with a transmittance of 90% or more.
  • the shape of such an optical member has a shape different from the fluoride crystal base material 11 used.
  • the cross-sectional area of at least one direction can be made to be 350 ⁇ 350 mm or more, and the total length of the outer periphery of the cross-section is 1600 mm or more
  • the thickness in the direction orthogonal to the cross section can be 3 to 20 mm.
  • the fluoride crystal base material 11 is deformed by heating and pressing, it can be formed into a shape different from that of the fluoride crystal base material 11, and single crystal growth Even large-sized members that can not be manufactured directly can be easily manufactured.
  • the fluoride crystal base material 11 is pressed to start deformation due to recrystallization, and then it is deformed to a predetermined shape, so that the crystal structure is deformed like slip deformation or deformation in the molten state. Can be prevented from being violently disturbed.
  • deformation due to slippage of crystal structure and deformation due to recrystallization can not occur simultaneously, as in the deformation due to slippage of crystal structure, a large number of defects occur in the crystal structure, and optical properties, especially vacuum ultraviolet range It is possible to easily manufacture a fluoride crystal molded body having excellent optical properties without deteriorating the light transmittance.
  • FIG. 2 shows an ultraviolet cleaning device.
  • the ultraviolet cleaning device 60 is airtightly configured by combining the light source unit 63 that is airtightly configured and the plurality of light sources 61 is disposed, and the light source unit 63, and the cleaning object that can accommodate the cleaning object 73 inside It comprises an accommodating portion 71.
  • the light source portion 63 and the cleaning object storage portion 71 are adjacent to each other through the opening 65, and the window member 50 made of the fluoride crystal molded body manufactured as described above is attached to the opening 65. There is. By mounting the window member 50 in a hermetically sealed state around the entire circumference of the opening 65, airtightness is secured independently of the inside of the light source unit 63 and the inside of the cleaning object storage unit 71.
  • the light source 61 for example, a vacuum ultraviolet light source such as a Xe excimer lamp, a Kr excimer lamp, or an Ar excimer lamp that emits vacuum ultraviolet light with a wavelength of 125 nm to 200 nm is used. Since these light sources 61 are usually tube-shaped discharge tubes, it is preferable to arrange a plurality of light sources in parallel as needed in order to irradiate a large area with uniform illuminance. The distance between the light source 61 and the window member 50 is approximately several tens of mm.
  • a support member 75 is provided inside the object-to-be-cleaned storage portion 71, and the object to be cleaned 73 is placed on the support member 75 so as to face the light source 61 via the window material 50. It is configured.
  • the object to be cleaned 73 is, for example, a large diameter semiconductor wafer, a glass substrate for a liquid crystal display, or the like.
  • the distance between the object to be cleaned 73 and the window member 50 is approximately several tens of mm.
  • the object to be cleaned 73 is accommodated in the to-be-cleaned object containing portion 71, and the light source portion 63 and the to-be-cleaned object containing portion 71 are airtightly closed.
  • the light cleaning is performed by applying light to the object to be cleaned 73 from the light source 61.
  • a light source unit using gas supply means and exhaust means not shown The inside of the 63 is replaced by an inert gas such as nitrogen.
  • this window material 50 is shape
  • transmission surface is formed wide enough by one window material 50, a large-sized to-be-cleaned thing Even in the case of cleaning 73, it is possible to arrange and configure one window member 50 in one opening 65. Therefore, as compared to the case where a plurality of small window members are combined to form a window having a large area as in the prior art, a joining member or a cross-shaped support member for combination is not necessary. It is possible to avoid the problem that light is not emitted. Further, since the seal length between the window member 50 and the opening 65 can be shortened, it is easy to ensure the airtightness of the light source unit 63 and the cleaning object storage unit 71.
  • an ultraviolet ray cleaning device 60 it is easy to efficiently clean a large object to be cleaned 73 such as a semiconductor wafer having a diameter of 300 mm or a substrate for a liquid crystal display having a large area. It is easy to improve the durability.
  • the obtained fluoride crystal molded body can be used, for example, in an optical device system such as an astronomical telescope for ground use or artificial satellite.
  • a fluoride crystal molded body can be used as the objective lens 102 of the telescope 100 provided with the objective lens 102 and the eyepiece 104 supported by the lens barrel 106.
  • Example 1 Preparation of calcium fluoride crystal base material> A substantially single-crystal calcium fluoride ingot grown by the Bridgman method was prepared, and a cylindrical sample having a diameter of 30 mm and a thickness of 10 mm was cut out from a part thereof. The two opposite faces in the thickness direction of this sample are precisely polished so that the degree of parallelism is within 10 seconds, the flatness per face is within 6 Newton rings, and the surface roughness (rms) for each face is 10 ⁇ or less. And finish polishing with a high purity SiO 2 powder so as not to leave an abrasive that causes surface absorption.
  • the transmittance of the sample in the wavelength range of 200 nm to 120 nm was measured with a vacuum ultraviolet spectrophotometer. The results are shown in FIG. Here, it was confirmed that the transmittance including reflection at a wavelength of 126 nm is 65% or more, the light transmittance at a wavelength of 146 nm is 85% or more, and the light transmittance at a wavelength of 172 nm is 90% or more.
  • a block having a diameter of 150 mm and a thickness of 250 mm was cut out from a single crystal ingot, and the surface was cleaned with an alcohol such as methanol to obtain a crystal base material 11.
  • the crystal base material 11 was molded using a molding apparatus as shown in FIG.
  • the crystal base material 11 was accommodated in a carbon-made mold 13 with a diameter of 500 mm and a height of 300 mm, and was placed at the center of the lower mold 17 and the pressure mold 19 was in contact with the top.
  • the stainless steel chamber 10 was sealed and evacuated from the vacuum evacuation unit 39 to 10-1 Pa or less, N 2 gas was introduced from the atmosphere gas introduction unit 37 to maintain the inside in a nitrogen atmosphere of 0.92 MPa.
  • heat and pressure forming first, heat is generated by a heating element (heater) 33, and the temperature in the heat insulating frame 31 containing the forming die 13 is raised at a constant temperature rising rate, and reached 20 ° C. Pressurization was started (in FIG. 5, the process to reach 20 ° C. was omitted). The load applied to the pressure rod 25 during the pressure application period was 38 ton and constant.
  • the crystal base material 11 was deformed by continuing the temperature raising at a constant temperature rising rate while applying a constant load to the pressure rod 25.
  • the amount of deformation per unit time in the load direction gradually increases, and the increase in the amount of deformation per unit time ends 190 minutes after the start of heating, and the temperature at the maximum amount of deformation per unit time is 1000 Degree.
  • the obtained crystal compact had a diameter of 500 mm and a height of 22 mm.
  • a molded sample 53 having a diameter of 30 mm and a thickness of 10 mm was collected from the peripheral portion of the obtained crystal molded body 51.
  • the two faces of the molded sample 53 facing in the thickness direction have a parallelism of 10 seconds or less, a flatness of 6 Newton rings or less on each side, and a surface roughness (rms) of 10 angstroms or less on each side.
  • Precision polishing was carried out, and further, finish polishing with high purity SiO 2 powder was carried out so that no abrasive agent causing surface absorption remains.
  • the transmittance of the molded sample in the wavelength range of 200 nm to 120 nm was measured with a vacuum ultraviolet spectrophotometer. The results are shown in line B of FIG.
  • This molded sample was found to have a reflectance and transmission of at least 65% at a wavelength of 126 nm, a light transmittance of at least 85% at a wavelength of 146 nm, and a light transmittance of at least 90% at a wavelength of 172 nm.
  • a window 50 of 350 mm square was cut out and attached as the window 50 to the opening 50 of the ultraviolet cleaning device as shown in FIG. It was possible to clean the object to be cleaned by irradiating the ultraviolet light through the window member 50 using this ultraviolet cleaning device.
  • Example 2 The five calcium fluoride crystal base materials (No. 1 to No. 5) were prepared in the same manner as in Example 1 except that the load applied to the calcium fluoride crystal base material 11 was changed. It formed below. With respect to forming conditions under these loads, the pressure receiving area of the crystal base 11 is calculated from the shape and deformation of the original crystal base 11, and the pressure receiving area and the load applied to the pressure rod 25 are used to calculate each. The pressure at the time was calculated. The temperature (maximum deformation temperature) and the pressure at which the amount of deformation per unit time is maximized are set to five crystal base materials No. 5 The following table shows 1-5. The relationship between the maximum deformation temperature obtained for these crystal base materials and the pressure thereof is shown in FIG. 7 by points.
  • the deformation conditions are set such that the pressure P and the temperature T applied to the crystal base material 11 satisfy at least one of the equations (5) to (8).
  • the crystal base material 11 starts deformation due to recrystallization, it can be formed into a desired shape while suppressing deterioration of optical characteristics such as a decrease in transmittance and an increase in induced absorption.
  • RASCO single crystal orientation rapid measurement apparatus
  • the pressure P and the temperature T applied to the crystal base material 11 are more than boundary values represented by the equations (5) to (8)
  • the pressure P and the temperature T applied to the crystal base material 11 are set to satisfy at least one of the conditions of formulas (1) to (4), deformation due to recrystallization can be similarly started.
  • the temperature T in the equations (1) to (4) is in a range lower than the melting point of the crystal base material 11, and the pressure P is a range in which the crystal base material 11 does not cause mechanical fracture such as buckling at the temperature T. It is desirable to
  • Example 3 In Example 3, after heating the calcium fluoride crystal base material 11 to 1050 ° C., a load of 38 tons was loaded, and the crystal base material 11 was continuously deformed to the target shape while keeping the temperature and the load constant. At this time, the pressure at the start of deformation was 21.1 MN / m 2 . The pressure and temperature values are shown in FIG. 8 (Ex. 3). The other conditions were the same as in Example 1, and a crystal molded body 51 was produced, and a sample for measurement of a molded body was produced from the obtained crystal molded body 51.
  • Example 3 The heating temperature and the pressure at the start of deformation in Example 3 satisfy the equations (2) and (3), and by starting the deformation due to recrystallization under this condition, the increase of the induced absorption is suppressed while suppressing the increase. It has been found that the crystal base material can be formed into a desired shape.
  • Example 4 In Example 4, after heating the crystal base material 11 to 1100 ° C., a load of 27 tons was loaded, and the crystal base material 11 was continuously deformed to the target shape while keeping the temperature and the load constant. At this time, the pressure at the start of deformation was 15.0 MN / m 2 . The pressure and temperature values are shown in FIG. 8 (Ex. 4). The other conditions were the same as in Example 1, and a crystal molded body 51 was produced, and a sample for measurement of a molded body was produced from the obtained crystal molded body 51.
  • Example 4 The heating temperature and the pressure at the start of deformation in Example 4 satisfy the equation (2), and by starting the deformation due to recrystallization under this condition, it is possible to suppress the increase in the induced absorption, while suppressing the crystal base material It has been found that can be molded into the desired shape.
  • Comparative Examples 1 and 2 In the same manner as in Example 3, except that the pressure and temperature applied to the crystal base material 11 during heat and pressure forming were 600 ° C. and 38 tons in Comparative Example 1 and 600 ° C. and 76 tons in Comparative Example 2, respectively. A body 51 was produced, and a sample for measurement of a molded body 53 was produced from the obtained crystal molded body 51. The pressure during the start of deformation is 21.1MN / m 2 in Comparative Example 1 was 42.2MN / m 2 in Comparative Example 2. The pressure and temperature values are shown in FIG. 8 (Com. 1, Com. 2).
  • the transmittance of a sample 53 for measurement of each molded body in a wavelength range of 300 nm to 120 nm was measured with a vacuum ultraviolet spectrophotometer. The results are shown in FIG. 3.
  • the energy density per pulse of an ArF excimer laser of 193 nm wavelength is 50 mJ / after 10 5 pulse irradiation in cm 2, and shows the results of measuring the transmittance in the wavelength range of 200nm from 800nm to FIG.
  • line C indicates the result of Comparative Example 1
  • line D indicates the result of Comparative Example 2.
  • the molded product molded at a low temperature as in Comparative Examples 1 and 2 has a low transmittance of light of a short wavelength, and as shown in FIG. It is suggested that there are many defects in the crystal structure.
  • Example 5 a compact having a diameter of 50 mm and a height of 20 mm was formed from a calcium fluoride single crystal base material having a diameter of 30 mm and a height of 50 mm, and whether deformation due to recrystallization occurred was confirmed.
  • the molding was performed in the same manner as in Example 1 except that the load applied by the pressure rod 25 was 1.5 ton.
  • the temperature at which the amount of deformation per unit time was maximum was 970 ° C.
  • the pressure at that time was 20.8 MN / m 2
  • the molding was completed in a molding time of 30 minutes. This result was similar to the case of the pressure of 20.8 MN / m 2 in Example 2.
  • the photograph of the upper surface of the obtained molded object is shown to Fig.9 (a), and the photograph of a lower surface is shown to (b).
  • the grain boundaries were traced with a pencil to make the crystal grains more visible.
  • the crystal orientation specified by the Laue method was measured using a single crystal orientation rapid measurement apparatus RASCO (manufactured by Rigaku Corporation). The crystal orientation is indicated by arrows and numerical values in the figure. In the single crystal base material before forming shown in the reference, no grain boundary is observed at all as shown in FIG.
  • the numerical value of the crystal orientation in the figure is the deviation angle ⁇ of the surface from the (111) plane as shown in FIG. 10, and the direction of the arrow is the x axis when the ⁇ 111> axis is projected onto the xy plane.
  • the azimuth angle ⁇ from is shown.
  • the method of the present invention has been illustrated by way of an example of forming a calcium fluoride crystal base material, but other fluoride crystal base materials can be deformed and manufactured according to the present invention.
  • the present invention it is possible to easily form a calcium fluoride crystal base material having a desired shape without deteriorating the optical properties of the calcium fluoride crystal base material.
  • the obtained molded product is very useful as an optical device using vacuum ultraviolet light or an optical component of a light cleaning device.

Abstract

Disclosed is a method for producing a molded fluoride crystal article which has a different shape from that of a fluoride crystal base and has excellent optical properties readily. The method comprises heating the fluoride crystal base at a temperature lower than the melting point of the fluoride crystal base while compressing to mold the fluoride crystal base into a predetermined shape.  In the method, the fluoride crystal base is compressed to initiate the deformation of the fluoride crystal base through recrystallization and the deformation is allowed to proceed until the fluoride crystal base has the predetermined shape.

Description

フッ化物結晶成形体の製造方法、並びに、それにより製造された光学部材、光学部材を備える光学装置及び紫外線洗浄装置Method for producing a fluoride crystal molded body, and an optical member produced thereby, an optical device provided with the optical member, and an ultraviolet cleaning device
 本発明は、フッ化物結晶母材を所定形状に成形するためのフッ化物結晶成形体の製造方法と、この製造方法により製造されたフッ化物結晶成形体を備える光学部材と、この光学部材を用いた光学装置及び紫外線洗浄装置とに関する。 The present invention relates to a method for producing a fluoride crystal molded body for molding a fluoride crystal base material into a predetermined shape, an optical member provided with the fluoride crystal molded body produced by the method, and the optical member Optical device and ultraviolet cleaning device.
 従来、Xeエキシマランプ、Krエキシマランプ、Arエキシマランプ等を用いた各種機器の光学系、特に、波長200nm以下の光を透過する光学系では、フッ化カルシウム等のフッ化物からなる光学部材が用いられている。この光学部材は実質的に単結晶により形成されているものが多い。フッ化物の単結晶を育成するには、ブリッジマン法やチョクラルスキー法などの単結晶育成技術が利用されている。 Conventionally, in optical systems of various devices using Xe excimer lamps, Kr excimer lamps, Ar excimer lamps, etc., particularly optical systems that transmit light with a wavelength of 200 nm or less, optical members made of fluorides such as calcium fluoride are used It is done. This optical member is often substantially formed of a single crystal. In order to grow a fluoride single crystal, single crystal growth techniques such as the Bridgman method and the Czochralski method are used.
 単結晶育成技術を利用して各種の光学部材を作製するには、目的の光学部材より大きな単結晶を育成した後、切断等の加工工程を経て目的の形状にしなければならない。そのため、育成した単結晶より大きな形状の光学部材を製造することは不可能である。具体的には、通常、直径350mmを超える大きさで波長200nm以下の光を透過する大型の光学部材を得ることは困難であった。 In order to produce various optical members using a single crystal growth technique, it is necessary to grow a single crystal larger than a target optical member, and then process it into a target shape through processing steps such as cutting. Therefore, it is impossible to manufacture an optical member having a larger shape than the grown single crystal. Specifically, it has been difficult to obtain a large-sized optical member which normally transmits light with a wavelength of 200 nm or less at a diameter greater than 350 mm.
 フッ化物結晶母材を融点より低い温度で変形させる方法が知られている。例えば、下記非特許文献1では、フッ化リチウム及びフッ化カルシウムを鍛造することによる光学特性と機械的特性の変化が評価されている。円柱状のフッ化カルシウム結晶母材を加圧装置内のアッパーラムとロワーラムとの間に配置し、Heガス雰囲気下で510~750℃の範囲の種々の温度で加熱して、アッパーラムとロワーラムとの間で加圧することによりフッ化物結晶を変形させることが開示されている。また、フッ化リチウム結晶についてもその装置を用いて300~600℃の範囲で加熱して鍛造したことが開示されている。
OPTICAL ENGINEERING, Vol.18 No.6, Nov.-Dec.1979, P602-609
There is known a method of deforming a fluoride crystal base material at a temperature lower than the melting point. For example, in Non-Patent Document 1 below, changes in optical properties and mechanical properties due to forging of lithium fluoride and calcium fluoride are evaluated. A columnar calcium fluoride crystal base material is disposed between the upper ram and the lower ram in a pressure device, and heated at various temperatures in the range of 510 to 750 ° C. in a He gas atmosphere to obtain the upper ram and the lower ram It is disclosed that the fluoride crystals are deformed by pressing between them. It is also disclosed that lithium fluoride crystals are also forged by heating in the range of 300 to 600 ° C. using the apparatus.
OPTICAL ENGINEERING, Vol. 18 No. 6, Nov.-Dec. 1979, P602-609
 しかしながら、本発明者の実験によると、上記文献に開示されたような温度などの条件でフッ化物結晶母材を変形させて所定形状に成形すると、光学特性の劣化が激しく、特に、真空紫外域の光の透過率等の低下は顕著であることが分かった。 However, according to the experiments of the present inventor, when the fluoride crystal base material is deformed and formed into a predetermined shape under the conditions such as the temperature disclosed in the above-mentioned document, the optical characteristics deteriorate remarkably, particularly, the vacuum ultraviolet region It was found that the decrease in the light transmittance of the light is remarkable.
 そこで、本発明の目的は、フッ化物結晶母材とは異なる形状を有して光学特性に優れたフッ化物結晶成形体をフッ化物結晶母材から容易に製造することが可能な製造方法を提供することである。また、本発明のさらなる目的は、そのような製造方法により製造されて光学特性に優れたフッ化物結晶成形体を供える光学部材を提供することである。本発明のさらに別の目的は、そのような光学部材を用いた光学装置又は紫外線洗浄装置を提供することである。 Therefore, an object of the present invention is to provide a manufacturing method capable of easily producing a fluoride crystal molded body having a shape different from the fluoride crystal base material and having excellent optical properties from the fluoride crystal base material. It is to be. A further object of the present invention is to provide an optical member which is produced by such a production method and provided with a fluoride crystal molded article having excellent optical properties. Still another object of the present invention is to provide an optical device or an ultraviolet cleaning device using such an optical member.
 本発明の第1の態様に従えば、フッ化物結晶母材を所定形状に成形するフッ化物結晶成形体の製造方法であって、対向する一対の加圧面間に前記フッ化物結晶母材を配置し、該一対の加圧面間に一定荷重を負荷しながら前記フッ化物結晶母材を一定昇温速度で加熱した際、前記フッ化物結晶母材の前記荷重方向における単位時間当たりの変形量が最大となる温度をTとし、該温度Tにおいて前記フッ化物結晶母材に負荷される圧力をPとしたとき、前記フッ化物結晶母材を前記温度T以上で且つフッ化物結晶母材を融点より低い温度で前記圧力P以上に加熱及び加圧することにより該フッ化物結晶母材を変形させることを特徴とするフッ化物結晶成形体の製造方法が提供される。 According to a first aspect of the present invention, there is provided a method of producing a fluoride crystal molded body for forming a fluoride crystal base material into a predetermined shape, wherein the fluoride crystal base material is disposed between a pair of opposed pressure surfaces. When the fluoride crystal base material is heated at a constant temperature rising rate while applying a constant load between the pair of pressing surfaces, the deformation amount per unit time in the load direction of the fluoride crystal base material is maximum Where T is the temperature at which temperature is T and the pressure applied to the fluoride crystal base material at that temperature T is P, the fluoride crystal base material is at least the temperature T and the fluoride crystal base material is lower than the melting point There is provided a method for producing a fluoride crystal molded body, characterized in that the fluoride crystal base material is deformed by heating and pressurizing at a temperature above the pressure P.
 本発明の第2の態様に従えば、フッ化物結晶成形体の製造方法であって、フッ化物結晶母材を融点より低い温度で加熱すると共に加圧して再結晶させながら変形させることを特徴とするフッ化物結晶成形体の製造方法が提供される。 According to a second aspect of the present invention, there is provided a method of producing a fluoride crystal molded body, which is characterized in that the fluoride crystal base material is deformed while being heated at a temperature lower than the melting point and pressurized to recrystallize. There is provided a method of producing a fluoride crystal molded body.
 本発明の第3の態様に従えば、本発明の製造方法により製造されたフッ化物結晶成形体からなる光学部材が提供される。 According to a third aspect of the present invention, there is provided an optical member comprising a fluoride crystal molded article produced by the production method of the present invention.
 本発明の第4の態様に従えば、前記光学部材を、波長125nm~200nmの真空紫外光が透過する光路に配置された光学装置が提供される。 According to a fourth aspect of the present invention, there is provided an optical device in which the optical member is disposed in an optical path through which vacuum ultraviolet light having a wavelength of 125 nm to 200 nm is transmitted.
 本発明の第5の態様に従えば、波長125nm~200nmの真空紫外光を窓材を透過して被洗浄部材に照射する紫外線洗浄装置において、前記窓材として前記光学部材を用いたことを特徴とする紫外線洗浄装置が提供される。 According to the fifth aspect of the present invention, there is provided an ultraviolet cleaning apparatus for irradiating vacuum cleaning light having a wavelength of 125 nm to 200 nm through the window material to the member to be cleaned, wherein the optical member is used as the window material. An ultraviolet cleaning device is provided.
 本発明の製造方法によれば、フッ化物結晶母材を加圧及び加熱して再結晶させながら変形させているので、フッ化物結晶母材の光学特性を維持しつつフッ化物結晶母材とは異なる所望形状に成形することができる。また、本発明の製造方法では、フッ化物結晶母材の変形量(変形速度)が最大となる温度条件で加熱及び加圧しているので再結晶を確実に生じさせることができる。 According to the manufacturing method of the present invention, since the fluoride crystal base material is deformed while being pressurized and heated to be recrystallized, it is possible to maintain the optical properties of the fluoride crystal base material while maintaining the optical properties of the fluoride crystal base material It can be molded into different desired shapes. Further, in the manufacturing method of the present invention, recrystallization can be reliably generated because heating and pressing are performed under temperature conditions where the deformation amount (deformation speed) of the fluoride crystal base material is maximum.
 また、本発明の光学部材は、上述のような製造方法により製造されたフッ化物結晶成形体からなるので、光学特性に優れる。また、原料となるフッ化物結晶母材の寸法に制限されずに、所望の寸法に成形されているので、種々の用途に有用となる。 Moreover, since the optical member of the present invention is formed of the fluoride crystal molded body manufactured by the above-described manufacturing method, it has excellent optical characteristics. Moreover, since it shape | molds to a desired dimension irrespective of the dimension of the fluoride crystal base material used as a raw material, it becomes useful to various uses.
 更に、本発明の光学装置は、本発明の光学部材が、波長125nm~200nmの真空紫外光が透過する光路に配置されているので、真空紫外光の透過率が高く、真空紫外光を用いる用途に好適である。 Furthermore, in the optical device of the present invention, since the optical member of the present invention is disposed in the optical path through which vacuum ultraviolet light with a wavelength of 125 nm to 200 nm is transmitted, the transmittance of vacuum ultraviolet light is high, and uses of vacuum ultraviolet light Preferred.
 また、本発明の紫外線洗浄装置は、本発明の光学部材を窓材として使用しているので、透過率などの光学特性に優れ且つ透過窓の面積を十分に確保することができる。それゆえ、大型の部材を効率よく光洗浄するために好適である。 Moreover, since the ultraviolet cleaning device of the present invention uses the optical member of the present invention as a window material, it can be excellent in optical characteristics such as transmittance, and sufficiently secure the area of the transmission window. Therefore, it is suitable for efficient light cleaning of a large member.
本発明の実施の形態の製造方法に用いる成形装置を示す概略断面図である。It is a schematic sectional drawing which shows the shaping | molding apparatus used for the manufacturing method of embodiment of this invention. 本発明の実施の形態の紫外線洗浄装置の洗浄部を示す概略断面図である。It is a schematic sectional drawing which shows the washing | cleaning part of the ultraviolet-ray washing | cleaning apparatus of embodiment of this invention. 実施例及び比較例において、200nmから120nmの波長域の透過率を真空紫外域分光光度計で測定した結果を示している。In the example and the comparative example, the result of having measured the transmittance | permeability of the wavelength range of 200 nm-120 nm with the vacuum ultraviolet region spectrophotometer is shown. 実施例及び比較例において、ArFエキシマレーザを照射した後、800nmから200nmの波長域の透過率を測定した結果を示している。In the example and the comparative example, after irradiating ArF excimer laser, the result of having measured the transmittance | permeability of a wavelength range of 800 nm-200 nm is shown. 実施例及び比較例において、フッ化物結晶成形体を加熱加圧する際の温度変化及び変形量を示す図である。In an Example and a comparative example, it is a figure which shows the temperature change and deformation amount at the time of heating-pressing a fluoride crystal molded object. 実施例及び比較例において得られたフッ化物結晶成形体を示し、(a)は平面図、(b)は側面図である。The fluoride crystal molded object obtained in the Example and the comparative example is shown, (a) is a top view, (b) is a side view. 実施例及び比較例において、加熱加圧成形時の最大圧力と最高温度との相関と、変形完了時の圧力及び温度との相関を示す図である。In an Example and a comparative example, it is a figure which shows the correlation with the maximum pressure and the maximum temperature at the time of heat-press molding, and the correlation with the pressure and temperature at the time of completion of deformation. 図7の加熱加圧成形時の最大圧力と最高温度との相関を示す点間を直線で結ぶ図である。FIG. 8 is a diagram connecting points between the maximum pressure and the maximum temperature during heat and pressure molding of FIG. 7 by a straight line. (a)(b)は実施例5により得られた成形体の上面と下面との写真であり、結晶方位が示されている。(A) (b) is a photograph of the upper surface and lower surface of the molded object obtained by Example 5, and crystal orientation is shown. 図9の結晶方位の定義を説明する図である。It is a figure explaining the definition of the crystal orientation of FIG. 実施例5において成形を行う前の単結晶母材の上面図である。FIG. 16 is a top view of a single crystal base material before forming in Example 5; フッ化物結晶成形体を望遠鏡の対物レンズに用いた例を示す。The example which used the fluoride crystal molded object for the objective lens of the telescope is shown.
 以下、本発明の実施の形態について説明する。 Hereinafter, embodiments of the present invention will be described.
 この実施の形態により製造されるフッ化物結晶成形体は、真空紫外光等の光を透過させる目的の各種の光学部材として使用可能な成形体であり、平板形状、球面若しくは非球面の凸形状又は凹形状などの適宜な形状を呈する。 The fluoride crystal molded body manufactured according to this embodiment is a molded body that can be used as various optical members for the purpose of transmitting light such as vacuum ultraviolet light, and has a flat plate shape, a spherical or aspherical convex shape or It has an appropriate shape such as a concave shape.
 このフッ化物結晶成形体を製造するには、予め形成されたフッ化物結晶母材を加熱及び加圧して成形することにより製造する。 In order to manufacture the fluoride crystal molded body, it is manufactured by molding a preformed fluoride crystal base material by heating and pressing.
 フッ化物結晶母材とは、例えば、フッ化カルシウム、フッ化マグネシウム、フッ化バリウム、フッ化ランタン、フッ化セリウム、フッ化イットリウム等の結晶体である。真空紫外光に対する透過率等の光学特性に優れているという理由で、フッ化カルシウムが好適である。 The fluoride crystal base material is, for example, a crystal of calcium fluoride, magnesium fluoride, barium fluoride, lanthanum fluoride, cerium fluoride, yttrium fluoride or the like. Calcium fluoride is preferred because it is excellent in optical characteristics such as transmittance to vacuum ultraviolet light.
 フッ化物結晶母材は、製造される成形体に要求される透過率等の光学特性を予め備えているものが好適である。成形過程において光学特性を向上させることが容易でないからである。 It is preferable that the fluoride crystal base material is provided in advance with optical characteristics such as transmittance required for a molded article to be produced. It is because it is not easy to improve the optical characteristics in the molding process.
 このフッ化物結晶母材は、単結晶体又は多結晶体の何れでもよいが、優れた光学特性を得るためには単結晶体であることが好ましい。ここで、フッ化物結晶母材が単結晶体であるとは、実質的に単結晶体であれば足り、わずかに双晶などを含んでいてもよい。単結晶は、例えば、ブリッジマン法、チョクラルスキー法等の単結晶育成技術を用いて得られる。 The fluoride crystal base material may be either a single crystal or a polycrystal, but is preferably a single crystal to obtain excellent optical properties. Here, it is sufficient that the fluoride crystal base material is a single crystal substantially as long as it is a single crystal, and it may slightly contain twin crystals and the like. The single crystal can be obtained, for example, using a single crystal growth technique such as the Bridgman method or the Czochralski method.
 フッ化物結晶母材の成形は、融点より低い温度で行う。例えば、フッ化カルシウムの融点は約1350℃と報告されている。融点以上の温度に加熱して液相を生じさせると、液相が凝固する際に新たな結晶が乱雑に形成され、得られる成形体の光学特性が著しく悪化するため好ましくない。この成形では、フッ化物結晶母材を加熱及び加圧することで、固相のまま再結晶による変形を開始させ、その後、更に所定形状まで変形させる。 The forming of the fluoride crystal base material is performed at a temperature lower than the melting point. For example, the melting point of calcium fluoride is reported to be about 1350 ° C. When the liquid phase is generated by heating to a temperature higher than the melting point, new crystals are randomly formed when the liquid phase is solidified, and the optical properties of the obtained molded product are significantly deteriorated. In this forming, by heating and pressurizing the fluoride crystal base material, deformation due to recrystallization is started as it is in the solid phase, and then it is further deformed to a predetermined shape.
 ここで、再結晶による変形とは、再結晶させつつ変形させることである。一般に、金属やセラミックスなどの結晶材料を融点以下のある温度まで加熱すると、急激に軟化し、変形した結晶が、多角形の細粒に分割結晶する。圧延などの機械加工を行なった場合には、それによって増加していた転位も、上記加熱により消滅し、結晶粒は内部歪(内部応力)を持たない安定したものとなる。この現象を再結晶と呼ぶ。 Here, the deformation by recrystallization is to deform while recrystallizing. In general, when crystal materials such as metals and ceramics are heated to a temperature below the melting point, they are rapidly softened and deformed crystals are separated and separated into polygonal fine grains. When mechanical processing such as rolling is performed, dislocations increased thereby are also extinguished by the heating, and the crystal grains become stable without internal strain (internal stress). This phenomenon is called recrystallization.
 本発明ではフッ化物結晶母材を変形させるために、所定温度の下で加圧しながら再結晶させる。すなわち、本発明においては、フッ化物結晶母材を加熱のみで再結晶させるのではなく、一定の温度以上でフッ化物結晶母材を加圧しながら再結晶させることで、フッ化物結晶母材を真空紫外域の光透過率などの光学特性を劣化させることなく変形することができる。後述する実施例のように、圧力が高い程、低い温度で変形速度が大きくなることなどから、再結晶による変形を開始させるために十分な温度は、圧力との相関を有することが推測できる。そのため、本発明では、温度と圧力とを組み合わせることで、再結晶による変形を開始させる。なお、再結晶の開始点を精密に特定することは困難であるため、確実に再結晶による変形が起こる温度及び圧力で変形を開始させればよい。 In the present invention, in order to deform the fluoride crystal base material, recrystallization is performed under pressure at a predetermined temperature. That is, in the present invention, the fluoride crystal base material is vacuumed by recrystallization while pressurizing the fluoride crystal base material at a predetermined temperature or higher, instead of recrystallizing the fluoride crystal base material only by heating. It can be deformed without deteriorating optical characteristics such as light transmittance in the ultraviolet region. As in the examples described later, the higher the pressure, the higher the deformation rate at a lower temperature, and so on, so it can be inferred that the temperature sufficient for initiating deformation due to recrystallization has a correlation with the pressure. Therefore, in the present invention, deformation due to recrystallization is started by combining temperature and pressure. In addition, since it is difficult to pinpoint the starting point of recrystallization precisely, it is sufficient to start deformation at a temperature and pressure at which deformation due to recrystallization surely occurs.
 温度又は圧力の少なくとも一方が低すぎる条件でフッ化物結晶母材を変形させた場合には、再結晶による変形ではなく結晶構造の滑りによる変形が起こると考えられる。滑りによる変形が起こると、変形に伴って結晶中に格子欠陥を生じ、透過率等の光学特性が低下してしまう。 In the case where the fluoride crystal base material is deformed under the condition that at least one of temperature and pressure is too low, it is considered that deformation due to slippage of the crystal structure occurs, not deformation due to recrystallization. When deformation due to slippage occurs, lattice defects occur in the crystal as the deformation occurs, and optical characteristics such as transmittance decrease.
 本発明者の知見によると、確実に再結晶による変形が起こる温度及び圧力は以下のように求めることができることが分かった。すなわち、一定荷重を負荷しながらフッ化物結晶母材を一定昇温速度で加熱した際、フッ化物結晶母材の荷重方向における単位時間当たりの変形量(荷重方向における単位時間当たりの長さの変化量)が最大値(以下、適宜「最大変形速度」という)となる温度T(以下、適宜、最大変形温度という)を測定する。この最大変形温度では、次の理由から、フッ化物結晶母材の再結晶が生じていると考えられる。フッ化物結晶母材の加圧による変形は、滑りの現象、すなわち、結晶の転位が結晶面上をすべることによって起こることが知られている。滑りが起こるための活性化エネルギーは比較的小さいため、温度依存性も少ない。それゆえ、比較的低温でも、結晶に応力をかけることにより起こる。一方、再結晶は、前述のように、その結晶に含まれる転位が加熱により再配列して、結晶核が生成し、結晶核が粒成長する現象である。再結晶が生じるための活性化エネルギーは、比較的高いために温度依存性が大きい。このため、高温では、再結晶の反応速度が大きくなる。従って、結晶を加圧して変形させる場合に、結晶の温度上昇に対して単位時間当たりの変形量が余り変化しないのであれば、滑りによる変形が起こっていると考えられる。これに対して、温度上昇により、単位時間当たりの結晶の変形量が大きく変わっている温度領域、例えば、後述する図5の容積変化曲線Vにおける変曲点付近の温度領域では、再結晶が起こっていると考えられる。このようにして、発明者は、フッ化物結晶母材の再結晶が、最大変形温度では確実に生じていると推論している。 According to the findings of the present inventor, it has been found that the temperature and pressure at which deformation due to recrystallization reliably occurs can be determined as follows. That is, when the fluoride crystal base material is heated at a constant temperature rising rate while applying a constant load, the deformation amount per unit time in the load direction of the fluoride crystal base material (change in length per unit time in the load direction) The temperature T (hereinafter referred to as “maximum deformation temperature” as appropriate) at which the amount is a maximum value (hereinafter referred to as “maximum deformation speed” as appropriate) is measured. At this maximum deformation temperature, recrystallization of the fluoride crystal base material is considered to occur for the following reason. It is known that deformation due to pressurization of a fluoride crystal base material is caused by a sliding phenomenon, that is, dislocation of the crystal slips on the crystal plane. Since the activation energy for slippage is relatively small, the temperature dependency is also small. Therefore, even at relatively low temperatures, it occurs by stressing the crystals. On the other hand, as described above, recrystallization is a phenomenon in which the dislocations contained in the crystal are rearranged by heating to generate crystal nuclei, and the crystal nuclei grow as grains. The activation energy for recrystallization to occur is relatively high and therefore highly temperature dependent. For this reason, at high temperatures, the reaction rate of recrystallization is increased. Therefore, when the crystal is pressurized and deformed, if deformation amount per unit time does not change much with respect to the temperature rise of the crystal, it is considered that deformation due to slip has occurred. On the other hand, recrystallization occurs in a temperature range in which the deformation amount of the crystal per unit time is largely changed due to the temperature increase, for example, in the temperature range near the inflection point in volume change curve V in FIG. It is thought that In this way, the inventor infers that recrystallization of the fluoride crystal matrix reliably occurs at the maximum deformation temperature.
 フッ化物結晶母材が再結晶を通じて変形したかどうかは、変形後の結晶方向を観察することによって検証することができる。例えば、図11に示すような変形前の単結晶のフッ化物結晶母材の表面は、再結晶を経た変形が生じることによって、図9(a)に示すように、多数の結晶粒界が認められる。図9(a)には、ラウエ法によって特定される結晶粒の結晶方位を書き添えたが、それらの結晶方位がランダムであることから、多結晶体が生じていることが分かる。このように、成形体をフッ化物結晶母材を観察することによって、再結晶が起きたことが確認できる。これに対して、再結晶が起こらずに滑りのみでフッ化物結晶母材が変形した場合にはすべり帯や結晶の回転により生成された亜粒界が観察されるが結晶粒界は認められない。 Whether or not the fluoride crystal base material is deformed through recrystallization can be verified by observing the crystal orientation after deformation. For example, the surface of the single crystal fluoride crystal base material before deformation as shown in FIG. 11 has a large number of grain boundaries recognized as shown in FIG. 9A due to the occurrence of deformation through recrystallization. Be Although the crystal orientation of the crystal grain specified by the Laue method is added in FIG. 9 (a), it can be seen that polycrystals are generated because those crystal orientations are random. Thus, it can be confirmed that recrystallization has occurred by observing the molded body in the fluoride crystal base material. On the other hand, when the fluoride crystal base material is deformed only by sliding without recrystallization, subgrain boundaries generated by sliding bands and crystal rotation are observed but no grain boundaries are observed. .
 更に、フッ化物結晶母材がフッ化カルシウムからなる場合、上記のような加熱及び加圧下で再結晶を確実に起こさせるには、後述する実施例の結果に基づいて、次式(1)~(4)のいずれかを満たす温度T及び圧力Pとしてもよい。 Furthermore, when the fluoride crystal base material is made of calcium fluoride, in order to reliably cause recrystallization under the heating and pressure as described above, the following formulas (1) to (5) are based on the results of the examples described later. It is good also as temperature T and pressure P which satisfy either of (4).
T≧1125℃ かつ P≧6.9MN/m2 かつ -11.5×P(MN/m2)+1285 < T(℃)・・・(1)
T≧970℃ かつ P≧13.9MN/m2 かつ -22.3×P(MN/m2)+1435 < T(℃)・・・(2)
T≧968℃ かつ P≧20.8MN/m2 かつ -0.289×P(MN/m2)+976 < T(℃)・・・(3)
T≧883℃ かつ P≧27.7MN/m2 かつ -12.2×P(MN/m2)+1306 < T(℃)・・・(4)
T ≧ 1125 ° C. and P ≧ 6.9 MN / m 2 and −11.5 × P (MN / m 2 ) +1285 <T (° C.) (1)
T ≧ 970 ° C. and P ≧ 13.9MN / m 2 and -22.3 × P (MN / m 2 ) +1435 <T (℃) ··· (2)
T ≧ 968 ° C. and P ≧ 20.8MN / m 2 and -0.289 × P (MN / m 2 ) +976 <T (℃) ··· (3)
T ≧ 883 ° C. and P ≧ 27.7MN / m 2 and -12.2 × P (MN / m 2 ) +1306 <T (℃) ··· (4)
 このような温度T及び圧力Pにフッ化物結晶母材を加熱及び加圧するには、フッ化物結晶母材の破損を防止し易いなどの理由で、フッ化物結晶母材を加熱して昇温させてから加圧を開始するのがよく、特に、温度Tまで加熱してから加圧を開始するのが好適である。 In order to heat and pressurize the fluoride crystal base material to such temperature T and pressure P, the fluoride crystal base material is heated and heated, for example, because it is easy to prevent the failure of the fluoride crystal base material. It is preferable to start pressurization after that, and in particular, it is preferable to heat up to the temperature T and then start pressurization.
 加圧を開始することでフッ化物結晶母材の変形が開始されるが、このとき、温度T及び圧力Pには遅くともフッ化物結晶母材の変形途中の時点で到達させることが好ましい。仮に、再結晶が始まる前に、滑りによる変形で結晶構造に乱れを生じたとしても、その後に再結晶による変形期間を経過させることで改善できるからである。好ましくは、変形の開始時点で温度T及び圧力Pに到達させることが好適である。結晶構造の滑りによる変形を防止して、優れた光学特性を得やすくできるからである。 By starting pressurization, deformation of the fluoride crystal base material is started, but at this time, it is preferable to allow the temperature T and the pressure P to reach at the latest during the deformation of the fluoride crystal base material. Even if the crystal structure is disturbed by slip deformation before recrystallization starts, it can be improved by passing a deformation period by recrystallization thereafter. Preferably, the temperature T and the pressure P are reached at the start of the deformation. This is because deformation due to slippage of the crystal structure can be prevented, and excellent optical characteristics can be easily obtained.
 再結晶による変形を開始させた後は、更に所定形状まで変形させる。このとき、再結晶による変形を開始させた後、そのまま引き続いて加圧を継続して所定形状まで変形させることが好ましい。再結晶による変形を開始させた後には、加圧による変形を継続する限り、得られる成形体の光学特性を十分に高く確保し易いからである。この理由は、明確ではないが、再結晶による変形が結晶構造の滑りによる変形とは同時に起こらずに再結晶による変形が継続するか、あるいは、滑りと再結晶が同時に起こったとしてもその後に滑りの生じた部分が再結晶により結晶粒に置き換わるためであると推測される。 After the deformation due to recrystallization is started, it is further deformed to a predetermined shape. At this time, after deformation due to recrystallization is started, it is preferable to continue applying pressure as it is to deform to a predetermined shape. After the deformation due to recrystallization is started, as long as the deformation due to pressure is continued, the optical characteristics of the obtained molded article can be easily secured sufficiently high. The reason for this is not clear, but the deformation due to recrystallization does not occur simultaneously with the deformation due to the slip of the crystal structure, and the deformation due to recrystallization continues or the slip occurs even if the slip and the recrystallization occur simultaneously. It is inferred that the resulting portion of is to replace the crystal grains by recrystallization.
 この実施の形態では、このようなフッ化物結晶母材の成形を行うために、例えば図1に示すような成形装置を用いることができる。 In this embodiment, in order to form such a fluoride crystal base material, for example, a forming apparatus as shown in FIG. 1 can be used.
 図1の成形装置では、ステンレス容器からなるチャンバー10の内部に、フッ化物結晶母材11を収容して加圧可能な成形型13が配置されている。成形型13は、グラファイト製であり、円筒型15と、円筒型15の一方の端部開口を閉塞する下型17と、円筒型15の他方の端部開口から内部空間に収容されて摺動可能に配置された加圧型19とを備える。 In the molding apparatus of FIG. 1, a molding die 13 capable of containing and pressurizing the fluoride crystal base material 11 is disposed in a chamber 10 made of a stainless steel container. The mold 13 is made of graphite, and the cylindrical mold 15, the lower mold 17 closing one end opening of the cylindrical mold 15, and the other mold opening from the other end opening of the cylindrical mold 15 are accommodated in the internal space And a pressure die 19 arranged as possible.
 ここでは、下型17が支持ロッド21を介して支持部23で支持され、加圧型19が加圧ロッド25を介して加圧駆動部27に連結されている。下型17の加圧型19側の表面と、加圧型19の下型17側の表面とが対向して加圧面を構成している。 Here, the lower die 17 is supported by the support portion 23 via the support rod 21, and the pressure die 19 is connected to the pressure drive unit 27 via the pressure rod 25. The surface on the pressure mold 19 side of the lower mold 17 and the surface on the lower mold 17 side of the pressure mold 19 face each other to constitute a pressure surface.
 この成形型13は、通気性を有する断熱材からなる断熱枠31内に収容されている。断熱枠31内に発熱体33が配置されてチャンバー10内が加熱可能であり、成形型13を含む断熱枠31内の温度を温度検出部35により検出し、検出された温度に基づいて、発熱体33の加熱を精度よく制御することができる。 The mold 13 is accommodated in a heat insulating frame 31 made of a heat insulating material having air permeability. The heating element 33 is disposed in the heat insulation frame 31 so that the inside of the chamber 10 can be heated, and the temperature detection unit 35 detects the temperature in the heat insulation frame 31 including the mold 13 and generates heat based on the detected temperature. The heating of the body 33 can be precisely controlled.
 また、チャンバー10は気密性を有しており、支持ロッド21及び加圧ロッド25は気密シール部23a、27aにより気密性を確保して貫通配置されている。チャンバー10には雰囲気ガス導入部37及び真空排気部39とが接続されており、雰囲気ガス導入部37から不活性ガスが導入可能であると共に、真空排気部39から排気可能となっている。 Further, the chamber 10 is airtight, and the support rod 21 and the pressure rod 25 are airtightly disposed by the airtight seal portions 23a and 27a so as to be penetrated. An atmosphere gas introduction unit 37 and a vacuum evacuation unit 39 are connected to the chamber 10, and an inert gas can be introduced from the atmosphere gas introduction unit 37 and can be exhausted from the evacuation unit 39.
 この成形装置では、成形型13がグラファイトにより構成されている。グラファイトは灰分10wtppmを上回る一般純度のものではなく、灰分10wtppm以下の高純度のもの、特に2wtppm以下の超高純度のものを用いることが好ましい。得られるフッ化物結晶成形体への成形型13からのアルカリ金属およびアルカリ土類金属元素の浸透を浅くできるからである。 In this molding apparatus, the mold 13 is made of graphite. It is preferable to use graphite having a high purity of 10 wtppm or less, particularly an ultrahigh purity of 2 wtppm or less, not graphite having a general purity of more than 10 wtppm as ash. This is because the penetration of the alkali metal and the alkaline earth metal element from the mold 13 into the obtained fluoride crystal molded body can be made shallow.
 フッ化物結晶成形体へ浸透したアルカリ金属およびアルカリ土類金属元素は、フッ化物結晶成形体の表面を除去することでフッ化物結晶成形体から除去可能であるが、成形型13に灰分10wtppm以下の高純度のグラファイトを用いることで、切除する厚さを5mm程度に抑えることができる。 The alkali metal and alkaline earth metal elements that have permeated into the fluoride crystal molded body can be removed from the fluoride crystal molded body by removing the surface of the fluoride crystal molded body, but the mold 13 has an ash content of 10 wtppm or less By using high purity graphite, the thickness to be cut can be reduced to about 5 mm.
 このような成形装置を用いてフッ化物結晶母材11を成形するには、まず、成形型13内にフッ化物結晶母材11を収容する。成形型13内にフッ化物結晶母材11を収容した状態では、下型17の加圧型19側の表面及び/又は加圧型19の下型17側表面の各中心部に局所的に当接した状態で配置される。この状態で、成形型13を断熱枠31内に配置し、下型17を支持ロッド21で支持すると共に、加圧型19に加圧ロッド25を接続し、チャンバー10を密閉する。 In order to form the fluoride crystal base material 11 using such a forming apparatus, first, the fluoride crystal base material 11 is accommodated in the forming die 13. In a state in which the fluoride crystal base material 11 is accommodated in the mold 13, the center of the lower mold 17 is locally abutted on the surface on the pressure mold 19 side and / or each central surface of the pressure mold 19 on the lower mold 17 side. Arranged in the state. In this state, the mold 13 is placed in the heat insulation frame 31, the lower mold 17 is supported by the support rod 21, and the pressure rod 25 is connected to the pressure mold 19 to seal the chamber 10.
 その後、真空排気部39から真空引きして排気し、チャンバー10内を低圧状態として成形を開始してもよいが、好ましくは、排気後に雰囲気ガス導入部37から不活性ガスを導入し、チャンバー10内を不活性ガス雰囲気とする。チャンバー10内を不活性ガス雰囲気とすると、チャンバー10内を単に低圧状態にして成形する場合に比べ、得られるフッ化物結晶成形体に混入する不純物を少なく抑え易いからである。この不活性ガスとしては、窒素ガス、ヘリウムガスなどが挙げられる。 Thereafter, evacuation may be performed from the evacuation unit 39, evacuation may be performed, and molding may be started with the inside of the chamber 10 in a low pressure state, but preferably, inert gas is introduced from the atmosphere gas introducing unit 37 after evacuation. Make the inside an inert gas atmosphere. When the inside of the chamber 10 is made into an inert gas atmosphere, the amount of impurities mixed in the obtained fluoride crystal molded body can be easily suppressed as compared with the case where the inside of the chamber 10 is simply brought into a low pressure state for molding. Examples of the inert gas include nitrogen gas and helium gas.
 次いで、チャンバー10内雰囲気を維持しつつ加熱及び加圧してフッ化物結晶母材11を変形させる。成形工程の前に、再結晶による変形を確実に生じさせることができる所定温度及び所定圧力を予め測定して、そのような温度及び圧力を設定しておく。本発明者の知見に基づいて、上述のような最大変形速度を示す温度(最大変形温度)T及びそのときの圧力Pとしてもよい。 Next, heating and pressure are applied while maintaining the atmosphere in the chamber 10 to deform the fluoride crystal base material 11. Before the forming step, a predetermined temperature and a predetermined pressure at which deformation due to recrystallization can be reliably generated are measured in advance, and such temperature and pressure are set. Based on the knowledge of the present inventor, the temperature (maximum deformation temperature) T and the pressure P at that time may be used to indicate the maximum deformation speed as described above.
 この実施の形態では、まず、温度検出部35により温度を検出しつつ断熱枠31内に発熱体33を発熱させることで、フッ化物結晶母材11を加熱して所定温度まで昇温させる。そして、昇温後、この温度を維持して加圧を開始する。加圧は、支持ロッド21を介して支持部23により下型17及び筒状型15を支持した状態で、加圧ロッド25を介して加圧駆動部27により加圧型19を下型17側に圧縮することで行い、加圧型19に一定の荷重を負荷した状態を維持することで行う。 In this embodiment, first, the fluoride crystal base material 11 is heated to a predetermined temperature by heating the heating element 33 in the heat insulating frame 31 while detecting the temperature by the temperature detection unit 35. After the temperature rise, the temperature is maintained and pressurization is started. In pressing, with the lower mold 17 and the cylindrical mold 15 supported by the support portion 23 through the support rod 21, the pressure drive unit 27 moves the pressure mold 19 to the lower mold 17 side through the pressure rod 25. The compression is performed by maintaining a state in which a constant load is applied to the pressure mold 19.
 ここでは、加圧開始時にフッ化物結晶母材11に所定圧力が負荷されて、上述のような最大変形速度を生じる温度及び圧力に達していれば、フッ化物結晶母材11の変形開始時点から再結晶による変形が起こると考えられる。 Here, if the predetermined pressure is applied to the fluoride crystal base material 11 at the start of pressurization and the temperature and pressure that produce the maximum deformation rate as described above are reached, then from the deformation start point of the fluoride crystal base material 11 It is thought that deformation by recrystallization occurs.
 その後、発熱体33の発熱量を制御してフッ化物結晶母材11の温度を維持しつつ、加圧型19に一定の荷重を負荷した状態を維持することで、変形を進行させる。変形期間中、加圧型19とフッ化物結晶母材11との接触面積が増加することで、フッ化物結晶母材11に負荷される圧力は徐々に低下するが、再結晶による変形を開始させた後は、そのまま引き続いて加圧を継続させ、所定形状まで変形させる。一旦再結晶による変形を開始した後は、変形の終了時点では、再結晶による変形の条件を満たさない圧力となっていてもよい。 Thereafter, while controlling the calorific value of the heating element 33 and maintaining the temperature of the fluoride crystal base material 11, the deformation is advanced by maintaining a state in which a constant load is applied to the pressing die 19. During the deformation period, the contact area between the pressure die 19 and the fluoride crystal base material 11 increases, so the pressure applied to the fluoride crystal base material 11 gradually decreases, but the deformation due to recrystallization is started After that, the pressure is continuously continued as it is to deform it into a predetermined shape. Once deformation by recrystallization is started, at the end of deformation, the pressure may not satisfy the conditions of deformation by recrystallization.
 所定形状まで変形させた後、室温まで徐冷して成形装置から取り出し、必要に応じて各種の加工を施すことで、フッ化物結晶成形体の製造を完了する。 After being deformed to a predetermined shape, it is gradually cooled to room temperature, taken out from the forming apparatus, and subjected to various processing as necessary, thereby completing the production of a fluoride crystal molded body.
 この実施の形態では、成形完了後、成形型13に接触していたフッ化物結晶成形体の表面を除去する加工を施す。これにより成形型13のグラファイトからフッ化物結晶成形体へ浸透したアルカリ金属およびアルカリ土類金属元素を除去し、フッ化物結晶成形体中のアルカリ金属およびアルカリ土類金属元素の各々の濃度を10wtppb以下にすることができる。 In this embodiment, after completion of molding, processing is performed to remove the surface of the fluoride crystal molded body in contact with the mold 13. As a result, the alkali metal and alkaline earth metal elements permeating the fluoride crystal compact from the graphite of the mold 13 are removed, and the concentration of each of the alkali metal and alkaline earth metal elements in the fluoride crystal compact is 10 wt ppb or less Can be
 更に、フッ化物結晶母材11として用いた材料が単結晶体のように不純物の含有量の少ないものである場合、得られたフッ化物結晶成形体に含有されるCr、Mn、Fe、Co、Ni、Ba、Zn、La、Ce、Pbの各濃度を50wtppb以下にすることが可能である。 Furthermore, when the material used as the fluoride crystal base material 11 has a low content of impurities, such as a single crystal, Cr, Mn, Fe, Co, and the like contained in the obtained fluoride crystal molded body The concentrations of Ni, Ba, Zn, La, Ce, and Pb can be 50 wtppb or less.
 また、フッ化物結晶成形体が厚さの一様な板状部材である場合、その厚さの変動幅を1mm以下とし、そりを0.5%以下とし、表面粗さRaを50nm以下とするように、例えば、大型オスカー型研磨機にて#1200の砥粒で両面をラップし、続いて酸化セリウムで研磨し、この後、洗浄、ならびに乾燥を行うことで、光学部材を製造することができる。
When the fluoride crystal molded body is a uniform plate-like member having a uniform thickness, the variation width of the thickness is 1 mm or less, the warpage is 0.5% or less, and the surface roughness Ra is 50 nm or less. Thus, for example, an optical member can be manufactured by lapping both surfaces with # 1200 abrasive grains in a large-sized Oscar-type polishing machine, followed by polishing with cerium oxide, and thereafter performing washing and drying. it can.
 このように製造された光学部材では、変形前のフッ化物結晶母材11の結晶構造である母結晶を除く結晶粒の粒径が20mm以下の均一なものとなっている。 In the optical member manufactured in this manner, the grain size of the crystal grains excluding the mother crystal which is the crystal structure of the fluoride crystal base material 11 before deformation is uniform with a diameter of 20 mm or less.
 また、126nmの波長における厚さ10mmあたりの初期透過率が65%以上、146nmの波長における厚さ10mmあたりの初期透過率が85%以上、及び/又は、172nmの波長における厚さ10mmあたりの初期透過率が90%以上の優れた光学特性を有している。 In addition, the initial transmission per 10 mm thickness at a wavelength of 126 nm is 65% or more, the initial transmission per 10 mm thickness at a wavelength of 146 nm is 85% or more, and / or the initial transmission per 10 mm thickness at a wavelength of 172 nm It has excellent optical properties with a transmittance of 90% or more.
 そのため、波長125nm~200nmの真空紫外光を放出するエキシマランプ装置に用いることができる。 Therefore, it can be used for an excimer lamp device that emits vacuum ultraviolet light with a wavelength of 125 nm to 200 nm.
 また、このような光学部材の形状は、用いたフッ化物結晶母材11とは異なる形状を有している。成形型13の形状を適宜選択することで、例えば、少なくとも一方向の断面の面積が350×350mm以上であるような形状にすることができ、また、その断面の外周の全長が1600mm以上となるようにすることができ、更に、その断面と直交する方向の厚さが3~20mmとなるようにすることができる。 Moreover, the shape of such an optical member has a shape different from the fluoride crystal base material 11 used. By appropriately selecting the shape of the mold 13, for example, the cross-sectional area of at least one direction can be made to be 350 × 350 mm or more, and the total length of the outer periphery of the cross-section is 1600 mm or more In addition, the thickness in the direction orthogonal to the cross section can be 3 to 20 mm.
 以上のようなフッ化物結晶成形体の製造方法によれば、フッ化物結晶母材11を加熱及び加圧して変形させるので、フッ化物結晶母材11とは異なる形状に成形でき、単結晶の育成により直接作製できないような大型の部材であっても容易に製造することができる。 According to the manufacturing method of the fluoride crystal molded body as described above, since the fluoride crystal base material 11 is deformed by heating and pressing, it can be formed into a shape different from that of the fluoride crystal base material 11, and single crystal growth Even large-sized members that can not be manufactured directly can be easily manufactured.
 そして、成形の際、フッ化物結晶母材11を加圧して再結晶による変形を開始させ、その後、所定形状まで変形させるので、結晶構造の滑りによる変形や溶融状態での変形のように結晶構造が激しく乱れることを防止できる。特に、結晶構造の滑りによる変形と再結晶による変形とは同時に起こり得ないため、結晶構造の滑りによる変形のように、結晶構造内に多数の欠陥が生じて光学特性、特に、真空紫外域の光透過率が悪化するようなことがなく、優れた光学特性を備えたフッ化物結晶成形体を容易に製造することが可能である。 Then, during molding, the fluoride crystal base material 11 is pressed to start deformation due to recrystallization, and then it is deformed to a predetermined shape, so that the crystal structure is deformed like slip deformation or deformation in the molten state. Can be prevented from being violently disturbed. In particular, since deformation due to slippage of crystal structure and deformation due to recrystallization can not occur simultaneously, as in the deformation due to slippage of crystal structure, a large number of defects occur in the crystal structure, and optical properties, especially vacuum ultraviolet range It is possible to easily manufacture a fluoride crystal molded body having excellent optical properties without deteriorating the light transmittance.
 次に、このようにして得られたフッ化物結晶成形体を、紫外線洗浄装置に用いる例について説明する。図2は紫外線洗浄装置を示す。 Next, an example in which the molded fluoride crystal thus obtained is used in an ultraviolet cleaning device will be described. FIG. 2 shows an ultraviolet cleaning device.
 紫外線洗浄装置60は、気密に構成されて複数の光源61が配設された光源部63と、光源部63と組み合わされて気密に構成され、内部に被洗浄物73を収容可能な被洗浄物収容部71とからなる。 The ultraviolet cleaning device 60 is airtightly configured by combining the light source unit 63 that is airtightly configured and the plurality of light sources 61 is disposed, and the light source unit 63, and the cleaning object that can accommodate the cleaning object 73 inside It comprises an accommodating portion 71.
 光源部63と被洗浄物収容部71とは開口部65を介して隣接しており、この開口部65に前記のようにして製造されたフッ化物結晶成形体からなる窓材50が装着されている。窓材50が開口部65の全周に気密にシールされた状態で装着されることで、光源部63の内部と被洗浄物収容部71の内部とは独立に気密性が確保されている。 The light source portion 63 and the cleaning object storage portion 71 are adjacent to each other through the opening 65, and the window member 50 made of the fluoride crystal molded body manufactured as described above is attached to the opening 65. There is. By mounting the window member 50 in a hermetically sealed state around the entire circumference of the opening 65, airtightness is secured independently of the inside of the light source unit 63 and the inside of the cleaning object storage unit 71.
 ここで光源61としては、例えば、波長125nm~200nmの真空紫外光を照射するXeエキシマランプ、Krエキシマランプ又はArエキシマランプ等の真空紫外光源が用いられる。これらの光源61は通常チューブ状の放電管であるため、大面積へ均一な照度で照射を行うために、必要に応じて複数の光源を並列に配置することが好ましい。なお、光源61と窓材50との距離は概ね数十mm程度である。 Here, as the light source 61, for example, a vacuum ultraviolet light source such as a Xe excimer lamp, a Kr excimer lamp, or an Ar excimer lamp that emits vacuum ultraviolet light with a wavelength of 125 nm to 200 nm is used. Since these light sources 61 are usually tube-shaped discharge tubes, it is preferable to arrange a plurality of light sources in parallel as needed in order to irradiate a large area with uniform illuminance. The distance between the light source 61 and the window member 50 is approximately several tens of mm.
 被洗浄物収容部71には、内部に支持部材75が設けられており、支持部材75上に被洗浄物73が載置されることで、窓材50を介して光源61と対面するように構成されている。被洗浄物73は、例えば大口径の半導体ウェハや液晶ディスプレイ用ガラス基板等である。この被洗浄物73と窓材50との距離は概ね数十mm程度である。 A support member 75 is provided inside the object-to-be-cleaned storage portion 71, and the object to be cleaned 73 is placed on the support member 75 so as to face the light source 61 via the window material 50. It is configured. The object to be cleaned 73 is, for example, a large diameter semiconductor wafer, a glass substrate for a liquid crystal display, or the like. The distance between the object to be cleaned 73 and the window member 50 is approximately several tens of mm.
 この紫外線洗浄装置60では、被洗浄物73が被洗浄物収容部71に収容されて、光源部63と被洗浄物収容部71とがそれぞれ気密に閉塞された状態で、窓材50を介して光源61から被洗浄物73へ光を照射することで光洗浄が行われる。 In the ultraviolet ray cleaning apparatus 60, the object to be cleaned 73 is accommodated in the to-be-cleaned object containing portion 71, and the light source portion 63 and the to-be-cleaned object containing portion 71 are airtightly closed. The light cleaning is performed by applying light to the object to be cleaned 73 from the light source 61.
 洗浄時には、酸素等の残留ガスによる光線の減衰を抑制し、かつ光照射によって生じるオゾン等の活性種による光源61の消耗を防止するため、図示しないガス供給手段及び排気手段を用いて、光源部63の内部が窒素等の不活性ガスによって置換されている。 At the time of cleaning, in order to suppress attenuation of light rays by residual gas such as oxygen and to prevent consumption of the light source 61 due to active species such as ozone generated by light irradiation, a light source unit using gas supply means and exhaust means not shown The inside of the 63 is replaced by an inert gas such as nitrogen.
 このような紫外線洗浄装置60によれば、光源部63と被洗浄物73との間に配置する窓材50として、フッ化物結晶成形体を用いているので、真空紫外光が高い透過率で透過でき、被洗浄物73を有効に洗浄することが可能である。 According to such an ultraviolet ray cleaning device 60, since a fluoride crystal molded body is used as the window member 50 disposed between the light source unit 63 and the object to be cleaned 73, vacuum ultraviolet light is transmitted with high transmittance. It is possible to effectively wash the object to be cleaned 73.
 そして、この窓材50がフッ化物結晶母材11から板状に成形されたものであり、1枚の窓材50により透過面の面積が十分に広く形成されているため、大型の被洗浄物73を洗浄する場合であっても、一つの開口部65に1枚の窓材50を配置して構成することが可能である。そのため、従来のように小型の窓材を複数組み合わせて大きな面積の窓を構成する場合に比べ、組み合わせのための接合部材や桟状支持部材等が不必要であり、これらの部材の影部分に光線が照射されないとう問題を回避できる。また、窓材50と開口部65との間のシール長を短くすることができるため、光源部63や被洗浄物収容部71の気密性を確保し易い。 And since this window material 50 is shape | molded from the fluoride crystal base material 11 in plate shape, and the area of the permeation | transmission surface is formed wide enough by one window material 50, a large-sized to-be-cleaned thing Even in the case of cleaning 73, it is possible to arrange and configure one window member 50 in one opening 65. Therefore, as compared to the case where a plurality of small window members are combined to form a window having a large area as in the prior art, a joining member or a cross-shaped support member for combination is not necessary. It is possible to avoid the problem that light is not emitted. Further, since the seal length between the window member 50 and the opening 65 can be shortened, it is easy to ensure the airtightness of the light source unit 63 and the cleaning object storage unit 71.
 従って、このような紫外線洗浄装置60によれば、直径300mmを超える半導体ウェハや大面積の液晶ディスプレイ用基板等の大型の被洗浄物73を効率よく洗浄し易く、しかも、気密性を確保して耐久性を向上することが容易である。 Therefore, according to such an ultraviolet ray cleaning device 60, it is easy to efficiently clean a large object to be cleaned 73 such as a semiconductor wafer having a diameter of 300 mm or a substrate for a liquid crystal display having a large area. It is easy to improve the durability.
 また、得られたフッ化物結晶成形体を、例えば、地上用や人工衛星用の天体望遠鏡などの光学装置系に使用することができる。例えば、図12の概念図に示したように、対物レンズ102と接眼レンズ104を鏡筒106に支持して備える望遠鏡100の対物レンズ102として、フッ化物結晶成形体を用いることができる。 In addition, the obtained fluoride crystal molded body can be used, for example, in an optical device system such as an astronomical telescope for ground use or artificial satellite. For example, as shown in the conceptual view of FIG. 12, a fluoride crystal molded body can be used as the objective lens 102 of the telescope 100 provided with the objective lens 102 and the eyepiece 104 supported by the lens barrel 106.
 以下、本発明の実施例について説明する。 Hereinafter, examples of the present invention will be described.
[実施例1]
<フッ化カルシウム結晶母材の準備>
 ブリッジマン法で育成された実質的に単結晶体であるフッ化カルシウムインゴットを用意し、その一部から、直径30mm厚さ10mmの円柱形状のサンプルを切り出した。このサンプルの厚さ方向の向かい合う2面を、平行度が10秒以内、片面ごとの平坦度がニュートンリング6本以内、片面ごとの表面粗さ(rms)が10オングストローム以下になるように精密研磨を施し、さらに表面吸収の原因となる研磨剤が残留しないように、高純度SiO粉による仕上げ研磨加工を施した。
Example 1
<Preparation of calcium fluoride crystal base material>
A substantially single-crystal calcium fluoride ingot grown by the Bridgman method was prepared, and a cylindrical sample having a diameter of 30 mm and a thickness of 10 mm was cut out from a part thereof. The two opposite faces in the thickness direction of this sample are precisely polished so that the degree of parallelism is within 10 seconds, the flatness per face is within 6 Newton rings, and the surface roughness (rms) for each face is 10 Å or less. And finish polishing with a high purity SiO 2 powder so as not to leave an abrasive that causes surface absorption.
 このサンプルの200nmから120nmの波長域の透過率を真空紫外域分光光度計で測定した。結果を図3に線Aで示す。ここでは、波長126nmにおける反射含み透過率が65%以上であり、146nmの波長における光透過率が85%以上であり、172nmの波長における光透過率が90%以上であることを確認した。 The transmittance of the sample in the wavelength range of 200 nm to 120 nm was measured with a vacuum ultraviolet spectrophotometer. The results are shown in FIG. Here, it was confirmed that the transmittance including reflection at a wavelength of 126 nm is 65% or more, the light transmittance at a wavelength of 146 nm is 85% or more, and the light transmittance at a wavelength of 172 nm is 90% or more.
 次に、このサンプルに、エネルギー密度50mJ/cm/パルスのArFエキシマレーザを10パルス照射した後、800nmから200nmの波長域の透過率を測定した。結果を図4に線Aで示す。 Next, to this sample, after the ArF excimer laser energy density 50 mJ / cm 2 / pulse to 105 pulse irradiation, the transmittance was measured in the wavelength range of 200nm from 800 nm. The results are shown by line A in FIG.
 次に、このサンプルとは別に、単結晶体のインゴットから直径150mm、厚さ250mmのブロックを切り出し、メタノールなどのアルコールで表面の汚れを取り除いて、結晶母材11とした。 Next, separately from this sample, a block having a diameter of 150 mm and a thickness of 250 mm was cut out from a single crystal ingot, and the surface was cleaned with an alcohol such as methanol to obtain a crystal base material 11.
<加熱加圧成形>
 図1に示すような成形装置を用いて、結晶母材11の成形を行った。
<Heating and pressure forming>
The crystal base material 11 was molded using a molding apparatus as shown in FIG.
 結晶母材11を、カーボン製の成形型13内の直径500mm、高さ300mmの内部に収容し、下型17の中央に載置すると共に加圧型19を頂部に当接させた。ステンレス製のチャンバー10を密閉し、真空排気部39から排気して10-1Pa以下にした後、雰囲気ガス導入部37からNガスを導入して内部を0.92MPaの窒素雰囲気に維持した。 The crystal base material 11 was accommodated in a carbon-made mold 13 with a diameter of 500 mm and a height of 300 mm, and was placed at the center of the lower mold 17 and the pressure mold 19 was in contact with the top. The stainless steel chamber 10 was sealed and evacuated from the vacuum evacuation unit 39 to 10-1 Pa or less, N 2 gas was introduced from the atmosphere gas introduction unit 37 to maintain the inside in a nitrogen atmosphere of 0.92 MPa.
 次に、発熱体33により加熱すると共に、加圧ロッド25により荷重を負荷して、加熱及び加圧することにより成形を行い、変形量を測定した。この成形時の温度変化を図5の線Tで示し、変形量を図5の線Vで示した。なお、加圧期間を図5の上部に付記した。 Next, while heating with the heating element 33, a load was applied by the pressure rod 25, and molding was performed by heating and pressing, and the amount of deformation was measured. The temperature change at the time of molding is shown by line T in FIG. 5, and the amount of deformation is shown by line V in FIG. The pressurization period is noted at the top of FIG.
 この加熱加圧成形では、まず、発熱体(ヒータ)33により加熱し、成形型13を収容している断熱枠31内の温度を一定の昇温速度で昇温させ、20℃に達した時点で加圧を開始した(図5には、20℃に達するまでの過程は省略した)。加圧期間中の加圧ロッド25に負荷する荷重は38tonで一定荷重とした。 In this heat and pressure forming, first, heat is generated by a heating element (heater) 33, and the temperature in the heat insulating frame 31 containing the forming die 13 is raised at a constant temperature rising rate, and reached 20 ° C. Pressurization was started (in FIG. 5, the process to reach 20 ° C. was omitted). The load applied to the pressure rod 25 during the pressure application period was 38 ton and constant.
 この状態で一定荷重を加圧ロッド25に負荷しつつ一定の昇温速度で昇温を続けることにより、結晶母材11を変形させた。変形期間中、荷重方向の単位時間当たりの変形量は徐々に増加し、加熱開始後190分で単位時間当たりの変形量の増加は終了し、単位時間当たりの変形量が最大での温度は1000度であった。 In this state, the crystal base material 11 was deformed by continuing the temperature raising at a constant temperature rising rate while applying a constant load to the pressure rod 25. During the deformation period, the amount of deformation per unit time in the load direction gradually increases, and the increase in the amount of deformation per unit time ends 190 minutes after the start of heating, and the temperature at the maximum amount of deformation per unit time is 1000 Degree.
 その後、結晶母材11の温度が1000℃に達した後、変形が完了するまでの間、1000℃で維持し、加圧を引き続き継続し、加熱開始後270分程度で変形が終了した。その後、室温まで徐冷して結晶成形体を取り出した。得られた結晶成形体は、直径500mm、高さ22mmであった。 Thereafter, after the temperature of the crystal base material 11 reached 1000 ° C., the temperature was maintained at 1000 ° C. until the deformation was completed, and the pressurization was continuously continued, and the deformation was finished about 270 minutes after the start of heating. Thereafter, the crystal compact was gradually cooled to room temperature and taken out. The obtained crystal compact had a diameter of 500 mm and a height of 22 mm.
<光学特性の評価>
 図6に示すように、得られた結晶成形体51の周辺部から直径30mm厚さ10mmの成形サンプル53を採取した。この成形サンプル53の厚さ方向に向かい合う2面を、平行度が10秒以内、片面ごとの平坦度がニュートンリング6本以内、片面ごとの表面粗さ(rms)が10オングストローム以下になるように精密研磨を施し、更に、表面吸収の原因となる研磨剤が残留しないように、高純度SiO粉による仕上げ研磨加工を施した。
<Evaluation of optical characteristics>
As shown in FIG. 6, a molded sample 53 having a diameter of 30 mm and a thickness of 10 mm was collected from the peripheral portion of the obtained crystal molded body 51. The two faces of the molded sample 53 facing in the thickness direction have a parallelism of 10 seconds or less, a flatness of 6 Newton rings or less on each side, and a surface roughness (rms) of 10 angstroms or less on each side. Precision polishing was carried out, and further, finish polishing with high purity SiO 2 powder was carried out so that no abrasive agent causing surface absorption remains.
 この成形サンプルの200nmから120nmの波長域の透過率を真空紫外域分光光度計で測定した。結果を図3の線Bに示す。この成形サンプルは、126nmの波長における反射含み透過率が65%以上であり、146nmの波長における光透過率が85%以上であり、172nmの波長における光透過率が90%以上であることが分かった。 The transmittance of the molded sample in the wavelength range of 200 nm to 120 nm was measured with a vacuum ultraviolet spectrophotometer. The results are shown in line B of FIG. This molded sample was found to have a reflectance and transmission of at least 65% at a wavelength of 126 nm, a light transmittance of at least 85% at a wavelength of 146 nm, and a light transmittance of at least 90% at a wavelength of 172 nm. The
 次に、この成形サンプルにエネルギー密度50mJ/cm/パルスのArFエキシマレーザを10パルス照射した後、800nmから200nmの波長域の透過率を測定した。その結果を、図4の線Bに示した。透過率の測定結果から、成形サンプルは、成形前の結晶母材11と略同等の透過率を有し、成形に伴う誘起吸収の増加が抑制されたことが分かった。 Then, an ArF excimer laser energy density 50 mJ / cm 2 / pulse was 10 5 pulses irradiated to the molded samples was measured for transmittance in a wavelength range of 200nm from 800 nm. The result is shown by line B in FIG. From the measurement results of the transmittance, it was found that the molded sample had a transmittance substantially equal to that of the crystal base material 11 before molding, and the increase in the induced absorption accompanying the molding was suppressed.
 次に、この成形サンプルに含有されているアルカリ金属元素及びアルカリ土類金属元素の各濃度を測定したところ、それぞれ100wtppb以下であった。また、この成形サンプルに含有されているCr、Mn、Fe、Co、Ni、Ba、Zn、La、Ce、Pbの各濃度を測定したところ、それぞれ50wtppb以下であった。 Next, when each concentration of the alkali metal element and the alkaline earth metal element contained in the molded sample was measured, it was 100 wtppb or less. The concentration of each of Cr, Mn, Fe, Co, Ni, Ba, Zn, La, Ce and Pb contained in this molded sample was measured and found to be 50 wtppb or less.
<板材の採取>
 得られた成形体から、350mm角の窓材50を切り出し、図2に示すような紫外線洗浄装置の開口50に窓材50として装着した。この紫外線洗浄装置を用いて、洗浄対象物に、紫外線を窓材50を介して照射することで洗浄することができた。
<Collection of plate material>
From the obtained molded product, a window 50 of 350 mm square was cut out and attached as the window 50 to the opening 50 of the ultraviolet cleaning device as shown in FIG. It was possible to clean the object to be cleaned by irradiating the ultraviolet light through the window member 50 using this ultraviolet cleaning device.
[実施例2]
 フッ化カルシウム結晶母材11に負荷する荷重を変えた他は、実施例1と同様にして、用意した5つのフッ化カルシウム結晶母材(No.1-No.5)を5種類の荷重の下で成形した。これらの荷重での成形条件について、元の結晶母材11の形状と変形量とから結晶母材11の受圧面積を算出し、この受圧面積と加圧ロッド25に負荷されている荷重とから各時点における圧力を算出した。そして単位時間当たりの変形量が最大となったときの温度(最大変形温度)と圧力を5つの結晶母材No.1-5について以下の表に示す。
Figure JPOXMLDOC01-appb-T000001
図7に、これらの結晶母材について得られた最大変形温度とその圧力の関係を点◆で示し、それらの点から最小二乗法による近似直線Fを作成した。なお、結晶母材の変形が進むと、一定荷重を受けている結晶母材の部分の面積が増加するので、圧力は徐々に低下する。それゆえ、変形(成形)完了時点の圧力と温度を図7に点■で示し、それらの点から最小二乗法による近似直線Lを作成した。
Example 2
The five calcium fluoride crystal base materials (No. 1 to No. 5) were prepared in the same manner as in Example 1 except that the load applied to the calcium fluoride crystal base material 11 was changed. It formed below. With respect to forming conditions under these loads, the pressure receiving area of the crystal base 11 is calculated from the shape and deformation of the original crystal base 11, and the pressure receiving area and the load applied to the pressure rod 25 are used to calculate each. The pressure at the time was calculated. The temperature (maximum deformation temperature) and the pressure at which the amount of deformation per unit time is maximized are set to five crystal base materials No. 5 The following table shows 1-5.
Figure JPOXMLDOC01-appb-T000001
The relationship between the maximum deformation temperature obtained for these crystal base materials and the pressure thereof is shown in FIG. 7 by points. From these points, an approximate straight line F by the least square method was created. As the deformation of the crystal base material progresses, the area of the portion of the crystal base material receiving a constant load increases, so the pressure gradually decreases. Therefore, the pressure and temperature at the completion of deformation (forming) are indicated by points 1 in FIG. 7, and from these points, the approximate straight line L by the least square method is created.
 この結果から、単位時間当たりの変形量が最大となった時点の圧力Pと温度Tとの間の相関は、圧力が高い程、低い温度となっていることが明らかになった。 From this result, it was revealed that the correlation between the pressure P and the temperature T when the amount of deformation per unit time is maximized is such that the higher the pressure, the lower the temperature.
 また、図7に示した各◆点をつなぐ直線は、図8に示すように以下の式(5)~(8)で表される。 Further, the straight lines connecting the respective ◆ points shown in FIG. 7 are expressed by the following equations (5) to (8) as shown in FIG.
1125≦T≦1205(℃): 
-11.5×P(MN/m)+1285=T(℃)・・・(5)
970≦T≦1125(℃):
-22.3×P(MN/m)+1435=T(℃)・・・(6)
968≦T≦970(℃):
-0.289×P(MN/m)+976=T(℃)・・・(7)
883≦T≦968(℃):
-12.2×P(MN/m)+1306=T(℃) ・・・(8)
1125 ≦ T ≦ 1205 (° C.):
-11.5 × P (MN / m 2 ) + 1285 = T (° C.) (5)
970 ≦ T ≦ 1125 (° C.):
−22.3 × P (MN / m 2 ) + 1435 = T (° C.) (6)
968 ≦ T ≦ 970 (° C.):
−0.289 × P (MN / m 2 ) + 976 = T (° C.) (7)
883 ≦ T ≦ 968 (° C.):
−12.2 × P (MN / m 2 ) + 1306 = T (° C.) (8)
 したがって、結晶母材11としてフッ化カルシウム結晶を用いる場合、結晶母材11に負荷する圧力P及び温度Tが少なくとも式(5)~(8)の何れかの条件を満たすような変形条件を設定すれば、結晶母材11は再結晶による変形を開始するので、透過率の低下や誘起吸収の増大といった光学特性の劣化を抑制しつつ、所望の形状に成形することが可能となる。 Therefore, when using calcium fluoride crystals as the crystal base material 11, the deformation conditions are set such that the pressure P and the temperature T applied to the crystal base material 11 satisfy at least one of the equations (5) to (8). In this case, since the crystal base material 11 starts deformation due to recrystallization, it can be formed into a desired shape while suppressing deterioration of optical characteristics such as a decrease in transmittance and an increase in induced absorption.
 結晶母材No.1~No.5について、それぞれ、成形後の結晶の上面及び下面を観察した。いずれも、成形体の上面及び下面には、多数の結晶粒界が認められた(図9(a)及び(b)参照)。また、結晶方位を単結晶方位迅速測定装置RASCO(株式会社リガク製)により測定した。この結果、成形体の結晶粒の結晶方位がランダムであったことから、多結晶体となっていることが分かった。このことは、再結晶が起きたことを示す。 Crystal matrix No. 1 to No. With respect to No. 5, the upper surface and the lower surface of the formed crystals were observed, respectively. In both cases, a large number of grain boundaries were observed on the upper and lower surfaces of the compact (see FIGS. 9A and 9B). Further, the crystal orientation was measured by a single crystal orientation rapid measurement apparatus RASCO (manufactured by Rigaku Corporation). As a result, since the crystal orientation of the crystal grain of the compact was random, it turned out that it is a polycrystal. This indicates that recrystallization has occurred.
 また、圧力が大きく温度が高いほど再結晶が起こりやすいことは明らかであるから、結晶母材11に負荷する圧力P及び温度Tが、式(5)~(8)で表される境界値よりも高圧・高温側の領域においても、同様に再結晶が確実に生じていると考えられるので、本発明に従い再結晶による変形を開始させることができる。すなわち結晶母材11に負荷する圧力P及び温度Tが式(1)~(4)の何れかの条件を少なくとも満たすように設定した場合にも、同様に再結晶による変形を開始させることができる。ここで式(1)~(4)における温度Tは結晶母材11の融点よりも低い範囲とし、また圧力Pは、温度Tにおいて結晶母材11が座屈等の機械的破壊を起こさない範囲とすることが望ましい。 Further, it is clear that the higher the pressure and the higher the temperature, the easier the recrystallization will occur. Therefore, the pressure P and the temperature T applied to the crystal base material 11 are more than boundary values represented by the equations (5) to (8) In the high pressure / high temperature region as well, since it is considered that recrystallization similarly occurs, deformation by recrystallization can be initiated according to the present invention. That is, even when the pressure P and the temperature T applied to the crystal base material 11 are set to satisfy at least one of the conditions of formulas (1) to (4), deformation due to recrystallization can be similarly started. . Here, the temperature T in the equations (1) to (4) is in a range lower than the melting point of the crystal base material 11, and the pressure P is a range in which the crystal base material 11 does not cause mechanical fracture such as buckling at the temperature T. It is desirable to
[実施例3]
 実施例3ではフッ化カルシウム結晶母材11を1050℃に加熱した後、38tonの荷重を負荷し、温度及び荷重を一定に保ったまま結晶母材11を目的形状まで連続的に変形させた。このとき変形開始時の圧力は21.1MN/mであった。この圧力及び温度の値を図8に示した(Ex.3)。その他の条件は実施例1と同様にして、結晶成形体51を作製し、得られた結晶成形体51から成形体測定用サンプル53を作製した。
[Example 3]
In Example 3, after heating the calcium fluoride crystal base material 11 to 1050 ° C., a load of 38 tons was loaded, and the crystal base material 11 was continuously deformed to the target shape while keeping the temperature and the load constant. At this time, the pressure at the start of deformation was 21.1 MN / m 2 . The pressure and temperature values are shown in FIG. 8 (Ex. 3). The other conditions were the same as in Example 1, and a crystal molded body 51 was produced, and a sample for measurement of a molded body was produced from the obtained crystal molded body 51.
 成形体測定用サンプル53に193nmの波長のArFエキシマレーザを1パルスあたりのエネルギー密度50mJ/cmで10パルス照射した後、800nmから200nmの波長域の透過率を測定した。結果を図4に線Eで示した。 After the energy density of 50mJ / cm 2 10 5 pulses irradiated per pulse an ArF excimer laser with a wavelength of 193nm in the molded body measurement sample 53, the transmittance was measured in the wavelength range of 200nm from 800 nm. The result is shown by line E in FIG.
 実施例3における加熱温度及び変形開始時の圧力の値は式(2)及び(3)を満たしており、この条件で再結晶による変形を開始させたことにより、誘起吸収の増大を抑制しつつ、結晶母材を所望形状に成形することができることが分かった。 The heating temperature and the pressure at the start of deformation in Example 3 satisfy the equations (2) and (3), and by starting the deformation due to recrystallization under this condition, the increase of the induced absorption is suppressed while suppressing the increase. It has been found that the crystal base material can be formed into a desired shape.
[実施例4]
 実施例4では結晶母材11を1100℃に加熱した後、27tonの荷重を負荷し、温度及び荷重を一定に保ったまま結晶母材11を目的形状まで連続的に変形させた。このとき変形開始時の圧力は15.0MN/mであった。この圧力及び温度の値を図8に示した(Ex.4)。その他の条件は実施例1と同様にして、結晶成形体51を作製し、得られた結晶成形体51から成形体測定用サンプル53を作製した。
Example 4
In Example 4, after heating the crystal base material 11 to 1100 ° C., a load of 27 tons was loaded, and the crystal base material 11 was continuously deformed to the target shape while keeping the temperature and the load constant. At this time, the pressure at the start of deformation was 15.0 MN / m 2 . The pressure and temperature values are shown in FIG. 8 (Ex. 4). The other conditions were the same as in Example 1, and a crystal molded body 51 was produced, and a sample for measurement of a molded body was produced from the obtained crystal molded body 51.
 成形体測定用サンプル53に193nmの波長のArFエキシマレーザを1パルスあたりのエネルギー密度50mJ/cmで10パルス照射した後、800nmから200nmの波長域の透過率を測定した結果を図4に線Fで示した。 After the molded body sample for measuring 53 to 10 5 pulse irradiation at an energy density 50 mJ / cm 2 per pulse to ArF excimer laser with a wavelength of 193 nm, in Figure 4 the result of measuring the transmittance in the wavelength range of 200nm from 800nm It is indicated by line F.
 実施例4における加熱温度及び変形開始時の圧力の値は式(2)を満たしており、この条件で再結晶による変形を開始させたことにより、誘起吸収の増大を抑制しつつ、結晶母材を所望形状に成形することができることが分かった。 The heating temperature and the pressure at the start of deformation in Example 4 satisfy the equation (2), and by starting the deformation due to recrystallization under this condition, it is possible to suppress the increase in the induced absorption, while suppressing the crystal base material It has been found that can be molded into the desired shape.
[比較例1、2]
 加熱加圧成形時の結晶母材11に負荷する圧力及び温度を、比較例1では600℃、38ton、比較例2では600℃、76tonとした他は、実施例3と同様にして、結晶成形体51を作製し、得られた結晶成形体51から成形体測定用サンプル53を作製した。変形開始時の圧力は比較例1では21.1MN/mであり、比較例2では42.2MN/mであった。この圧力及び温度の値を図8に示した(Com.1,Com.2)。
Comparative Examples 1 and 2
In the same manner as in Example 3, except that the pressure and temperature applied to the crystal base material 11 during heat and pressure forming were 600 ° C. and 38 tons in Comparative Example 1 and 600 ° C. and 76 tons in Comparative Example 2, respectively. A body 51 was produced, and a sample for measurement of a molded body 53 was produced from the obtained crystal molded body 51. The pressure during the start of deformation is 21.1MN / m 2 in Comparative Example 1 was 42.2MN / m 2 in Comparative Example 2. The pressure and temperature values are shown in FIG. 8 (Com. 1, Com. 2).
 各成形体測定用サンプル53の300nmから120nmの波長域の透過率を真空紫外域分光光度計で測定した結果を図3に示し、193nmの波長のArFエキシマレーザを1パルスあたりのエネルギー密度50mJ/cmで10パルス照射した後、800nmから200nmの波長域の透過率を測定した結果を図4に示した。図4中、線Cは、比較例1の結果を示し、線Dは、比較例2の結果を示す。 The transmittance of a sample 53 for measurement of each molded body in a wavelength range of 300 nm to 120 nm was measured with a vacuum ultraviolet spectrophotometer. The results are shown in FIG. 3. The energy density per pulse of an ArF excimer laser of 193 nm wavelength is 50 mJ / after 10 5 pulse irradiation in cm 2, and shows the results of measuring the transmittance in the wavelength range of 200nm from 800nm to FIG. In FIG. 4, line C indicates the result of Comparative Example 1, and line D indicates the result of Comparative Example 2.
 比較例1、2のように低温で成形した成形体は、図3に示すように短い波長の光の透過率が低く、また、図4に示すようにArFエキシマレーザの照射により誘起吸収が大きくなっており、結晶構造の欠陥が多いことが示唆された。 As shown in FIG. 3, the molded product molded at a low temperature as in Comparative Examples 1 and 2 has a low transmittance of light of a short wavelength, and as shown in FIG. It is suggested that there are many defects in the crystal structure.
[実施例5]
 次に、直径30mm、高さ50mmのフッ化カルシウム単結晶母材から直径50mm、高さ20mmの成形体を成形し、再結晶による変形が起こっているかを確認した。
[Example 5]
Next, a compact having a diameter of 50 mm and a height of 20 mm was formed from a calcium fluoride single crystal base material having a diameter of 30 mm and a height of 50 mm, and whether deformation due to recrystallization occurred was confirmed.
 成形は、加圧ロッド25により負荷する荷重を1.5tonとする他は、実施例1と同様にして行った。単位時間当たりの変形量が最大となる温度は970度で、そのときの圧力は20.8MN/mであり、30分の成形時間で成形が完了した。この結果は、実施例2における圧力が20.8MN/mの場合と同様の結果であった。 The molding was performed in the same manner as in Example 1 except that the load applied by the pressure rod 25 was 1.5 ton. The temperature at which the amount of deformation per unit time was maximum was 970 ° C., the pressure at that time was 20.8 MN / m 2 , and the molding was completed in a molding time of 30 minutes. This result was similar to the case of the pressure of 20.8 MN / m 2 in Example 2.
 得られた成形体の上面の写真を図9(a)、下面の写真を(b)に示す。この写真では、結晶粒を視認し易くするために粒界を鉛筆でなぞった。ラウエ法により特定される結晶方位を単結晶方位迅速測定装置RASCO(株式会社リガク製)を用いて測定した。図中に、結晶方位を矢印及び数値にて示している。なお、参考に示した成形前の単結晶母材には、図11に示すように、粒界は全く見られない。 The photograph of the upper surface of the obtained molded object is shown to Fig.9 (a), and the photograph of a lower surface is shown to (b). In this picture, the grain boundaries were traced with a pencil to make the crystal grains more visible. The crystal orientation specified by the Laue method was measured using a single crystal orientation rapid measurement apparatus RASCO (manufactured by Rigaku Corporation). The crystal orientation is indicated by arrows and numerical values in the figure. In the single crystal base material before forming shown in the reference, no grain boundary is observed at all as shown in FIG.
 図9(a)及び(b)から明らかなように、単結晶母材から得られた成形体には、多数の結晶粒界が認められ、それぞれの結晶粒についての結晶方位がランダムであることから、多結晶体となっており、再結晶が起きたことが明らかに確認できた。実施例2の結晶母材No.1~No.5から得られた成形体でも図9(a)及び(b)に示すような様子が観察された。 As apparent from FIGS. 9A and 9B, in the compact obtained from the single crystal base material, a large number of crystal grain boundaries are recognized, and the crystal orientations of the respective crystal grains are random. Thus, it was clearly confirmed that recrystallization had occurred because it was in a polycrystalline form. The crystal base material No. 1 of Example 2 1 to No. The appearance as shown in FIGS. 9 (a) and 9 (b) was observed even with the molded body obtained from No. 5.
 なお、図中の結晶方位の数値は、図10に示すように、表面の(111)面からのずれ角度αであり、矢印の向きは<111>軸をxy平面へ投影したときのx軸からの方位角βを示している。 The numerical value of the crystal orientation in the figure is the deviation angle α of the surface from the (111) plane as shown in FIG. 10, and the direction of the arrow is the x axis when the <111> axis is projected onto the xy plane. The azimuth angle β from is shown.
 上記実施例では、フッ化カルシウム結晶母材を成形する例を挙げて本発明の方法を例示したが、その他のフッ化物結晶母材でも本発明に従って変形させて製造することができる。 In the above embodiments, the method of the present invention has been illustrated by way of an example of forming a calcium fluoride crystal base material, but other fluoride crystal base materials can be deformed and manufactured according to the present invention.
 本発明により、フッ化カルシウム結晶母材の光学特性を劣化させることなく容易に所望の形状のフッ化カルシウム結晶母材を成形することできる。得られた成形体は、真空紫外光を使用する光学装置や光洗浄装置の光学部品として極めて有用である。 According to the present invention, it is possible to easily form a calcium fluoride crystal base material having a desired shape without deteriorating the optical properties of the calcium fluoride crystal base material. The obtained molded product is very useful as an optical device using vacuum ultraviolet light or an optical component of a light cleaning device.
 10 チャンバー
 11 フッ化物結晶母材
 13 成形型
 17 下型
 19 加圧型
 23 支持部
 27 加圧駆動部
 33 発熱体
 50 窓材
 60 紫外線洗浄装置
DESCRIPTION OF SYMBOLS 10 chamber 11 fluoride crystal base material 13 shaping | molding die 17 lower mold | type 19 pressurization type | mold 23 support part 27 pressurization drive part 33 heating element 50 window material 60 ultraviolet-ray cleaning apparatus

Claims (15)

  1.  フッ化物結晶母材を所定形状に成形するフッ化物結晶成形体の製造方法であって、
     対向する一対の加圧面間に前記フッ化物結晶母材を配置し、
     該一対の加圧面間に一定荷重を負荷しながら前記フッ化物結晶母材を一定昇温速度で加熱した際、前記フッ化物結晶母材の前記荷重方向における単位時間当たりの変形量が最大となる温度をTとし、該温度Tにおいて前記フッ化物結晶母材に負荷される圧力をPとしたとき、前記フッ化物結晶母材を前記温度T以上で且つフッ化物結晶母材を融点より低い温度で前記圧力P以上に加熱及び加圧することにより該フッ化物結晶母材を変形させることを特徴とするフッ化物結晶成形体の製造方法。
    A method for producing a fluoride crystal molded body, which shapes a fluoride crystal base material into a predetermined shape,
    Disposing the fluoride crystal base material between a pair of opposed pressure surfaces;
    When the fluoride crystal base material is heated at a constant temperature rising rate while applying a constant load between the pair of pressing surfaces, the deformation amount per unit time in the load direction of the fluoride crystal base material is maximized Assuming that the temperature is T, and the pressure applied to the fluoride crystal base material at the temperature T is P, the fluoride crystal base material is higher than the temperature T and the fluoride crystal base material is lower than the melting point. A method of producing a fluoride crystal molded body, characterized in that the fluoride crystal base material is deformed by heating and pressurizing to the pressure P or more.
  2.  さらに、上記温度Tと圧力Pを、前記フッ化物結晶母材を変形する前に予め求めること含むことを特徴とする請求項1に記載のフッ化物結晶成形体の製造方法。 The method for manufacturing a fluoride crystal molded body according to claim 1, further comprising: obtaining the temperature T and the pressure P in advance before deforming the fluoride crystal base material.
  3.  前記フッ化物結晶母材を前記温度Tに加熱した後に、前記圧力Pをフッ化物結晶母材に加えることを特徴とする請求項1または2に記載のフッ化物結晶成形体の製造方法。 The method for producing a fluoride crystal molded body according to claim 1 or 2, wherein the pressure P is applied to the fluoride crystal base material after the fluoride crystal base material is heated to the temperature T.
  4.  前記フッ化物結晶母材がフッ化カルシウム結晶母材であり、前記フッ化カルシウム結晶母材を、下式(1)~(4)のいずれかを満たす温度Tで圧力Pに加熱及び加圧することにより前記フッ化物結晶母材を変形させることを特徴とする請求項1乃至3の何れか一項に記載のフッ化物結晶成形体の製造方法。
    T≧1125℃ かつ P≧6.9MN/m2 かつ -11.5×P(MN/m2)+1285 < T(℃)・・・(1)
    T≧970℃ かつ P≧13.9MN/m2 かつ -22.3×P(MN/m2)+1435 < T(℃)・・・(2)
    T≧968℃ かつ P≧20.8MN/m2 かつ -0.289×P(MN/m2)+976 < T(℃)・・・(3)
    T≧883℃ かつ P≧27.7MN/m2 かつ -12.2×P(MN/m2)+1306 < T(℃)・・・(4)
    The fluoride crystal base material is a calcium fluoride crystal base material, and the calcium fluoride crystal base material is heated and pressurized to a pressure P at a temperature T satisfying any of the following formulas (1) to (4). The method according to any one of claims 1 to 3, wherein the fluoride crystal base material is deformed by
    T ≧ 1125 ° C. and P ≧ 6.9 MN / m 2 and −11.5 × P (MN / m 2 ) +1285 <T (° C.) (1)
    T ≧ 970 ° C. and P ≧ 13.9MN / m 2 and -22.3 × P (MN / m 2 ) +1435 <T (℃) ··· (2)
    T ≧ 968 ° C. and P ≧ 20.8MN / m 2 and -0.289 × P (MN / m 2 ) +976 <T (℃) ··· (3)
    T ≧ 883 ° C. and P ≧ 27.7MN / m 2 and -12.2 × P (MN / m 2 ) +1306 <T (℃) ··· (4)
  5.  フッ化物結晶成形体の製造方法であって、
     フッ化物結晶母材を融点より低い温度で加熱すると共に加圧して再結晶させながら変形させることを特徴とするフッ化物結晶成形体の製造方法。
    A method for producing a fluoride crystal compact,
    A method for producing a fluoride crystal molded body comprising heating the fluoride crystal base material at a temperature lower than the melting point and deforming while being pressurized to recrystallize.
  6.  前記フッ化物結晶母材は、フッ化物単結晶体であることを特徴とする請求項5に記載のフッ化物結晶成形体の製造方法。 The method for producing a fluoride crystal molded body according to claim 5, wherein the fluoride crystal base material is a fluoride single crystal.
  7.  前記フッ化物結晶母材は、フッ化カルシウムからなる請求項5に記載のフッ化物結晶成形体の製造方法。 The method for producing a fluoride crystal compact according to claim 5, wherein the fluoride crystal base material is made of calcium fluoride.
  8.  対向する一対の加圧面間に前記フッ化物結晶母材を配置して、該一対の加圧面間に一定荷重を負荷することで、前記フッ化物結晶母材を加圧することを特徴とする請求項5乃至7の何れか一項に記載のフッ化物結晶成形体の製造方法。 The fluoride crystal base material is placed by placing the fluoride crystal base material between a pair of opposing pressing surfaces, and applying a constant load between the pair of pressing surfaces. The manufacturing method of the fluoride-crystal molded object as described in any one of 5 thru | or 7.
  9.  請求項1乃至8の何れか一項に記載の製造方法により製造されたフッ化物結晶成形体から構成されたことを特徴とする光学部材。 An optical member comprising a fluoride crystal molded product produced by the production method according to any one of claims 1 to 8.
  10.  前記フッ化物結晶母材が単結晶であり、前記フッ化物結晶成形体が多結晶を含むことを特徴とする請求項9に記載の光学部材。 The optical member according to claim 9, wherein the fluoride crystal base material is a single crystal, and the fluoride crystal molded body contains a polycrystal.
  11.  126nmの波長における光透過率が65%以上、146nmの波長における光透過率が85%以上、及び、172nmの波長における光透過率が90%以上であり、少なくとも一方向の断面の面積が350×350mm以上であることを特徴とするフッ化物結晶成形体からなる光学部材。 The light transmittance at a wavelength of 126 nm is 65% or more, the light transmittance at a wavelength of 146 nm is 85% or more, the light transmittance at a wavelength of 172 nm is 90% or more, and the area of at least one cross section in one direction is 350 × An optical member comprising a fluoride crystal molded body having a length of 350 mm or more.
  12.  前記断面の外周の全長が1600mm以上であることを特徴とする請求項11に記載の光学部材。 The optical member according to claim 11, wherein a total length of an outer periphery of the cross section is 1600 mm or more.
  13.  含有されているアルカリ金属元素及びアルカリ土類金属元素の各濃度が100wtppb以下であると共に、含有されているCr、Mn、Fe、Co、Ni、Ba、Zn、La、Ce、Pbの各濃度が50wtppb以下であることを特徴とする請求項9乃至12の何れか一項に記載の光学部材。 Each concentration of the contained alkali metal element and alkaline earth metal element is 100 wtppb or less, and each concentration of Cr, Mn, Fe, Co, Ni, Ba, Zn, La, Ce, Pb contained The optical member according to any one of claims 9 to 12, having a weight of 50 wtppb or less.
  14.  請求項10乃至13の何れか一項に記載の光学部材を、波長125nm~200nmの真空紫外光が透過する光路に配置したことを特徴とする光学装置。 An optical device comprising the optical member according to any one of claims 10 to 13 in an optical path through which vacuum ultraviolet light with a wavelength of 125 nm to 200 nm is transmitted.
  15.  波長125nm~200nmの真空紫外光を窓材を透過して被洗浄部材に照射する紫外線洗浄装置において、
     前記窓材として請求項10乃至13の何れか一項に記載の光学部材を用いたことを特徴とする紫外線洗浄装置。
    In an ultraviolet cleaning device for irradiating a member to be cleaned with vacuum ultraviolet light having a wavelength of 125 nm to 200 nm through the window material,
    An ultraviolet cleaning device using the optical member according to any one of claims 10 to 13 as the window member.
PCT/JP2009/059405 2008-05-23 2009-05-22 Method for production of molded fluoride crystal article, optical member produced by the method, and optical device and ultraviolet ray washing device each comprising the optical member WO2009142284A1 (en)

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JP2010513063A JP5251976B2 (en) 2008-05-23 2009-05-22 Fluoride crystal molded body manufacturing method, optical member manufactured thereby, optical device including optical member, and ultraviolet cleaning device
KR1020107027598A KR101330974B1 (en) 2008-05-23 2009-05-22 Method for production of molded fluoride crystal article, optical member produced by the method, and optical device and ultraviolet ray washing device each comprising the optical member

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JP2013082620A (en) * 2008-05-23 2013-05-09 Nikon Corp Optical member made of fluoride crystal molded article, optical device having optical member, and ultraviolet cleaning device
JP2018177589A (en) * 2017-04-13 2018-11-15 国立大学法人名古屋大学 Method for treating inorganic crystal material, method for changing band gap of semiconductor crystal material, semiconductor crystal material and apparatus for manufacturing inorganic crystal material

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JP2013082620A (en) * 2008-05-23 2013-05-09 Nikon Corp Optical member made of fluoride crystal molded article, optical device having optical member, and ultraviolet cleaning device
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