JP5648675B2 - OPTICAL MEMBER COMPRISING FLUORIDE CRYSTAL FORMED BODY, OPTICAL DEVICE PROVIDED WITH OPTICAL MEMBER, AND UV RUBBER CLEANING DEVICE - Google Patents

Description

  The present invention relates to an optical member including a fluoride crystal formed body, and an optical device and an ultraviolet cleaning device using the optical member.

  Conventionally, in an optical system of various devices using a Xe excimer lamp, a Kr excimer lamp, an Ar excimer lamp, etc., particularly an optical system that transmits light with a wavelength of 200 nm or less, an optical member made of fluoride such as calcium fluoride is used. It has been. Many of these optical members are substantially formed of a single crystal. Single crystal growth techniques such as the Bridgman method and the Czochralski method are used to grow fluoride single crystals.

  In order to produce various optical members using the single crystal growth technique, a single crystal larger than the target optical member must be grown and then processed into a target shape through a processing step such as cutting. Therefore, it is impossible to manufacture an optical member having a shape larger than the grown single crystal. Specifically, it has been difficult to obtain a large optical member that normally transmits light having a diameter exceeding 350 mm and a wavelength of 200 nm or less.

A method of deforming a fluoride crystal base material at a temperature lower than the melting point is known. For example, in the following Non-Patent Document 1, changes in optical properties and mechanical properties due to forging lithium fluoride and calcium fluoride are evaluated. A cylindrical calcium fluoride crystal base material is placed between the upper ram and the lower ram in the pressurizing apparatus, and heated at various temperatures in the range of 510 to 750 ° C. in a He gas atmosphere, and the upper ram and the lower ram. It is disclosed that the fluoride crystal is deformed by pressurizing between the two. It is also disclosed that lithium fluoride crystals are forged by heating in the range of 300 to 600 ° C. using the apparatus.
OPTICAL ENGINEERING, Vol.18 No.6, Nov.-Dec.1979, P602-609

  However, according to the experiments of the present inventor, when the fluoride crystal base material is deformed and molded into a predetermined shape under conditions such as the temperature disclosed in the above document, the optical properties are severely deteriorated, particularly in the vacuum ultraviolet region. It was found that the decrease in the light transmittance and the like was remarkable.

  Then, the objective of this invention is providing the optical member which provides the fluoride crystal molded object excellent in the optical characteristic. Still another object of the present invention is to provide an optical device or an ultraviolet cleaning device using such an optical member.

  According to the first aspect, the fluoride crystal molding is characterized in that the light transmittance per 10 mm thickness at a wavelength of 172 nm is 90% or more, and the area of a cross section in at least one direction is 350 × 350 mm or more. An optical member comprising a body is provided.

  In the optical member, the light transmittance per 10 mm thickness at a wavelength of 146 nm may be 85% or more, and the light transmittance per 10 mm thickness at a wavelength of 126 nm may be 65% or more. . Moreover, 1600 mm or more may be sufficient as the full length of the outer periphery of the said cross section of the said optical member.

  Each concentration of alkali metal element and alkaline earth metal element contained in the optical member is 100 wtppb or less, and Cr, Mn, Fe, Co, Ni, Ba, Zn, La contained in the optical member , Ce, and Pb may be 50 wtppb or less.

  According to a second aspect, there is provided an optical device comprising the optical member and a vacuum ultraviolet light source, wherein the optical member is disposed in an optical path of vacuum ultraviolet light emitted from the vacuum ultraviolet light source. The vacuum ultraviolet light source may be a Xe excimer lamp, a Kr excimer lamp, or an Ar excimer lamp.

  According to a third aspect, the apparatus comprises a window material made of the optical member and a vacuum ultraviolet light source, and the vacuum ultraviolet light emitted from the vacuum ultraviolet light source is transmitted through the window material to irradiate the member to be cleaned. An ultraviolet cleaning device is provided. The vacuum ultraviolet light source may be a Xe excimer lamp, a Kr excimer lamp, or an Ar excimer lamp.

  According to another aspect, there is provided a method for manufacturing a fluoride crystal molded body in which a fluoride crystal matrix is molded into a predetermined shape, wherein the fluoride crystal matrix is disposed between a pair of opposed pressing surfaces, and the pair The temperature at which the amount of deformation per unit time of the fluoride crystal base material in the load direction is maximized when the fluoride crystal base material is heated at a constant heating rate while applying a constant load between the pressing surfaces of Where T is the pressure applied to the fluoride crystal base material at the temperature T, and the pressure is higher than the temperature T and the fluoride crystal base material is lower than the melting point. There is provided a method for producing a fluoride crystal molded body, wherein the fluoride crystal base material is deformed by heating and pressurizing to P or higher.

  According to still another aspect, there is provided a method for producing a fluoride crystal molded body, wherein the fluoride crystal base material is heated at a temperature lower than the melting point and is deformed while being pressurized and recrystallized. A method for producing a crystal compact is provided.

  According to still another aspect, there is provided an optical member comprising a fluoride crystal molded body produced by the above production method.

  According to still another aspect, an optical device is provided in which the optical member is disposed in an optical path through which vacuum ultraviolet light having a wavelength of 125 nm to 200 nm is transmitted.

  According to still another aspect, in the ultraviolet cleaning apparatus that irradiates the member to be cleaned with vacuum ultraviolet light having a wavelength of 125 nm to 200 nm through the window member, the optical member is used as the window member. A cleaning device is provided.

  According to the manufacturing method of the above aspect, since the fluoride crystal base material is deformed while being recrystallized by pressurization and heating, the fluoride crystal base material is maintained while maintaining the optical characteristics of the fluoride crystal base material. It can be formed into different desired shapes. Moreover, in the manufacturing method of the said aspect, since it heats and pressurizes on the temperature conditions that the deformation | transformation amount (deformation speed) of a fluoride crystal base material becomes the maximum, it can produce recrystallization reliably.

  Moreover, since the optical member of the said aspect consists of a fluoride crystal molded object manufactured by the above manufacturing methods, it is excellent in an optical characteristic. Moreover, since it is shape | molded by the desired dimension, without being restrict | limited to the dimension of the fluoride crystal base material used as a raw material, it becomes useful for various uses.

  Furthermore, in the optical device of the above aspect, since the optical member is disposed in an optical path through which vacuum ultraviolet light having a wavelength of 125 nm to 200 nm is transmitted, the transmittance of vacuum ultraviolet light is high, and it is suitable for applications using vacuum ultraviolet light. It is.

  Moreover, since the ultraviolet cleaning apparatus of the said aspect uses the said optical member as a window material, it is excellent in optical characteristics, such as a transmittance | permeability, and can fully ensure the area of a transmission window. Therefore, it is suitable for efficiently washing a large member with light.

It is a schematic sectional drawing which shows the shaping | molding apparatus used for the manufacturing method of embodiment. It is a schematic sectional drawing which shows the washing | cleaning part of the ultraviolet-ray cleaning apparatus of embodiment. In the Example and the comparative example, the result of having measured the transmittance | permeability of the wavelength range of 200 nm to 120 nm with the vacuum ultraviolet region spectrophotometer is shown. In the examples and comparative examples, the results of measuring the transmittance in the wavelength region from 800 nm to 200 nm after irradiation with the ArF excimer laser are shown. In an Example and a comparative example, it is a figure which shows the temperature change and deformation amount at the time of heat-pressing a fluoride crystal molded object. The fluoride crystal molded bodies obtained in Examples and Comparative Examples are shown, (a) is a plan view, and (b) is a side view. In an Example and a comparative example, it is a figure which shows the correlation with the maximum pressure and the maximum temperature at the time of heat press molding, and the correlation with the pressure and temperature at the time of a deformation | transformation completion. It is a figure which connects between the points which show the correlation of the maximum pressure and the maximum temperature at the time of the heat press molding of FIG. (A) and (b) are photographs of the upper surface and the lower surface of the molded body obtained in Example 5, showing the crystal orientation. It is a figure explaining the definition of the crystal orientation of FIG. 6 is a top view of a single crystal base material before being molded in Example 5. FIG. An example in which a fluoride crystal molded body is used for an objective lens of a telescope is shown.

  Hereinafter, an embodiment for carrying out the present invention will be described.

  The fluoride crystal molded body produced according to this embodiment is a molded body that can be used as various optical members for the purpose of transmitting light such as vacuum ultraviolet light, and has a flat plate shape, spherical or aspherical convex shape, or Appropriate shapes such as a concave shape are exhibited.

  In order to manufacture this fluoride crystal molded body, it is manufactured by heating and pressurizing a preformed fluoride crystal base material.

  The fluoride crystal base material is, for example, a crystal such as calcium fluoride, magnesium fluoride, barium fluoride, lanthanum fluoride, cerium fluoride, yttrium fluoride, or the like. Calcium fluoride is preferred because it has excellent optical properties such as transmittance for vacuum ultraviolet light.

  The fluoride crystal base material is preferably provided with optical characteristics such as transmittance required for the molded article to be manufactured in advance. This is because it is not easy to improve the optical characteristics in the molding process.

  The fluoride crystal base material may be either a single crystal or a polycrystal, but is preferably a single crystal in order to obtain excellent optical characteristics. Here, the fact that the fluoride crystal base material is a single crystal is sufficient if it is substantially a single crystal, and may contain a slight amount of twins. The single crystal can be obtained by using a single crystal growing technique such as the Bridgman method or the Czochralski method.

  The fluoride crystal matrix is formed at a temperature lower than the melting point. For example, the melting point of calcium fluoride is reported to be about 1350 ° C. Heating to a temperature higher than the melting point to produce a liquid phase is not preferable because new crystals are randomly formed when the liquid phase solidifies, and the optical properties of the resulting molded product are significantly deteriorated. In this molding, the fluoride crystal base material is heated and pressurized to start deformation by recrystallization in the solid phase, and then further deformed to a predetermined shape.

  Here, the deformation | transformation by recrystallization is making it deform | transform while recrystallizing. Generally, when a crystal material such as metal or ceramics is heated to a temperature below the melting point, it softens rapidly and the deformed crystal is divided into polygonal fine grains. When machining such as rolling is performed, the dislocations increased by the machining are also extinguished by the heating, and the crystal grains are stabilized without internal strain (internal stress). This phenomenon is called recrystallization.

  In this embodiment, in order to deform the fluoride crystal base material, recrystallization is performed while applying pressure at a predetermined temperature. In other words, the fluoride crystal matrix is not recrystallized only by heating, but is recrystallized while pressurizing the fluoride crystal matrix at a certain temperature or higher, thereby allowing the fluoride crystal matrix to transmit light in the vacuum ultraviolet region. It can be deformed without degrading the optical characteristics such as the rate. As in the examples described later, the higher the pressure, the higher the deformation speed at a lower temperature. Therefore, it can be inferred that the temperature sufficient for initiating deformation by recrystallization has a correlation with the pressure. Therefore, deformation by recrystallization is started by combining temperature and pressure. In addition, since it is difficult to specify the starting point of recrystallization precisely, it is only necessary to start the deformation at a temperature and pressure at which deformation due to recrystallization occurs.

  When at least one of temperature and pressure is too low, the fluoride crystal base material is deformed, and it is considered that deformation due to slippage of the crystal structure occurs instead of deformation due to recrystallization. When deformation due to slip occurs, lattice defects are generated in the crystal along with the deformation, and optical characteristics such as transmittance deteriorate.

  According to the knowledge of the present inventor, it has been found that the temperature and pressure at which deformation due to recrystallization occurs reliably can be obtained as follows. That is, when a fluoride crystal base material is heated at a constant temperature increase rate while applying a constant load, the deformation amount per unit time in the load direction of the fluoride crystal base material (change in length per unit time in the load direction) A temperature T (hereinafter, appropriately referred to as “maximum deformation temperature”) at which the amount is maximum (hereinafter, appropriately referred to as “maximum deformation speed”) is measured. At this maximum deformation temperature, recrystallization of the fluoride crystal base material is considered to occur for the following reason. It is known that deformation due to pressurization of a fluoride crystal base material is caused by a slip phenomenon, that is, crystal dislocation slips on the crystal plane. Since the activation energy for causing the slip is relatively small, the temperature dependency is also small. Therefore, it occurs by applying stress to the crystal even at relatively low temperatures. On the other hand, as described above, recrystallization is a phenomenon in which dislocations contained in the crystal are rearranged by heating to generate crystal nuclei and crystal nuclei grow. Since the activation energy for causing recrystallization is relatively high, the temperature dependency is large. For this reason, the reaction rate of recrystallization increases at high temperatures. Therefore, when the crystal is pressurized and deformed, if the amount of deformation per unit time does not change much with respect to the temperature rise of the crystal, it is considered that deformation due to slipping has occurred. On the other hand, recrystallization occurs in a temperature region where the deformation amount of the crystal per unit time is greatly changed by the temperature rise, for example, in the temperature region near the inflection point in the volume change curve V of FIG. It is thought that. In this way, the inventor has inferred that recrystallization of the fluoride crystal matrix occurs reliably at the maximum deformation temperature.

  Whether or not the fluoride crystal base material is deformed through recrystallization can be verified by observing the crystal direction after deformation. For example, the surface of a single crystal fluoride crystal base material before deformation as shown in FIG. 11 has a large number of crystal grain boundaries as shown in FIG. It is done. In FIG. 9 (a), the crystal orientations of crystal grains specified by the Laue method are added, but since the crystal orientations are random, it can be seen that a polycrystal is generated. In this way, it can be confirmed that recrystallization has occurred by observing the fluoride crystal base material of the compact. On the other hand, when the fluoride crystal base material is deformed only by sliding without recrystallization, a sub-boundary generated by slip band and crystal rotation is observed, but no grain boundary is observed. .

  Furthermore, when the fluoride crystal base material is made of calcium fluoride, the following formulas (1) to (1) are used to reliably cause recrystallization under heating and pressurization as described above. It is good also as the temperature T and the pressure P which satisfy | fill either of (4).

T ≧ 1125 ℃ and P ≧ 6.9MN / m ² and -11.5 × P (MN / m ² ) +1285 <T (℃) ・ ・ ・ （1）
T ≧ 970 ℃ and P ≧ 13.9MN / m ² and -22.3 × P (MN / m ² ) +1435 <T (℃) ・ ・ ・ （2）
T ≧ 968 ° C and P ≧ 20.8MN / m ² and -0.289 × P (MN / m ² ) +976 <T (° C) (3)
T ≧ 883 ° C. and P ≧ 27.7MN / m ² and ^{-12.2 × P (MN / m 2} ) +1306 <T (℃) ··· (4)

  In order to heat and pressurize the fluoride crystal base material to such a temperature T and pressure P, the fluoride crystal base material is heated and heated for reasons such as preventing the breakage of the fluoride crystal base material. It is preferable to start pressurization after heating, and it is particularly preferable to start pressurization after heating to temperature T.

  By starting the pressurization, the deformation of the fluoride crystal base material is started. At this time, it is preferable to reach the temperature T and the pressure P at the latest during the deformation of the fluoride crystal base material. Even if the crystal structure is disturbed by deformation due to slip before recrystallization starts, it can be improved by passing the deformation period due to recrystallization thereafter. Preferably, the temperature T and the pressure P are reached at the start of deformation. This is because deformation due to slipping of the crystal structure can be prevented, and excellent optical characteristics can be easily obtained.

  After starting deformation by recrystallization, it is further deformed to a predetermined shape. At this time, after starting the deformation by recrystallization, it is preferable that the pressure is continuously continued to be deformed to a predetermined shape. This is because, after the deformation by recrystallization is started, as long as the deformation by pressurization is continued, it is easy to ensure sufficiently high optical characteristics of the obtained molded body. The reason for this is not clear, but the deformation due to recrystallization does not occur at the same time as the deformation due to the slip of the crystal structure, or the deformation due to recrystallization continues, or even if the slip and recrystallization occur at the same time, the subsequent slip It is presumed that this is because the portion where the occurrence of is replaced by crystal grains by recrystallization.

  In this embodiment, in order to form such a fluoride crystal base material, for example, a forming apparatus as shown in FIG. 1 can be used.

  In the molding apparatus of FIG. 1, a molding die 13 that accommodates a fluoride crystal base material 11 and can be pressurized is disposed inside a chamber 10 made of a stainless steel container. The molding die 13 is made of graphite, and is slid by being accommodated in the internal space from the cylindrical die 15, the lower die 17 that closes one end opening of the cylindrical die 15, and the other end opening of the cylindrical die 15. And a pressurizing die 19 arranged in a possible manner.

  Here, the lower die 17 is supported by the support portion 23 via the support rod 21, and the pressure die 19 is connected to the pressure drive portion 27 via the pressure rod 25. The surface of the lower die 17 on the pressure die 19 side and the surface of the pressure die 19 on the lower die 17 side face each other to form a pressure surface.

  The mold 13 is housed in a heat insulating frame 31 made of a heat insulating material having air permeability. The heating element 33 is disposed in the heat insulating frame 31 so that the inside of the chamber 10 can be heated, and the temperature in the heat insulating frame 31 including the mold 13 is detected by the temperature detection unit 35, and heat is generated based on the detected temperature. The heating of the body 33 can be accurately controlled.

  Moreover, the chamber 10 has airtightness, and the support rod 21 and the pressure rod 25 are disposed through the airtight seal portions 23a and 27a while ensuring airtightness. An atmosphere gas introduction part 37 and a vacuum exhaust part 39 are connected to the chamber 10, and an inert gas can be introduced from the atmosphere gas introduction part 37 and exhausted from the vacuum exhaust part 39.

  In this molding apparatus, the mold 13 is made of graphite. It is preferable to use graphite not having a general purity exceeding 10 wtppm of ash, but having a high purity having an ash content of 10 wtppm or less, particularly an ultrahigh purity having an ash content of 2 wtppm or less. This is because the penetration of alkali metal and alkaline earth metal element from the mold 13 into the resulting fluoride crystal molded body can be shallow.

  Alkali metal and alkaline earth metal element that has penetrated into the fluoride crystal molded body can be removed from the fluoride crystal molded body by removing the surface of the fluoride crystal molded body, but the mold 13 has an ash content of 10 wtppm or less. By using high-purity graphite, the thickness to be cut can be suppressed to about 5 mm.

  In order to form the fluoride crystal base material 11 using such a forming apparatus, first, the fluoride crystal base material 11 is accommodated in the mold 13. In a state where the fluoride crystal base material 11 is accommodated in the molding die 13, the surface of the lower die 17 is locally in contact with the center of the pressure die 19 side surface and / or the lower die 17 side surface of the pressure die 19. Arranged in a state. In this state, the mold 13 is placed in the heat insulating frame 31, the lower mold 17 is supported by the support rod 21, the pressure rod 25 is connected to the pressure mold 19, and the chamber 10 is sealed.

  Thereafter, the vacuum exhaust unit 39 is evacuated and exhausted, and the molding may be started with the inside of the chamber 10 in a low pressure state. Preferably, after the exhaust, an inert gas is introduced from the atmospheric gas introduction unit 37 and the chamber 10 is introduced. The inside is an inert gas atmosphere. This is because, if the inside of the chamber 10 is an inert gas atmosphere, it is easy to suppress the impurities mixed in the obtained fluoride crystal molded body, compared with the case where the inside of the chamber 10 is simply formed in a low pressure state. Examples of the inert gas include nitrogen gas and helium gas.

  Next, the fluoride crystal base material 11 is deformed by heating and pressurizing while maintaining the atmosphere in the chamber 10. Prior to the forming step, a predetermined temperature and a predetermined pressure that can surely cause deformation due to recrystallization are measured in advance, and such a temperature and pressure are set. Based on the knowledge of the present inventor, the temperature (maximum deformation temperature) T and the pressure P at that time may be the maximum deformation speed as described above.

  In this embodiment, first, the fluoride crystal base material 11 is heated to a predetermined temperature by causing the heating element 33 to generate heat in the heat insulating frame 31 while detecting the temperature by the temperature detection unit 35. And after temperature rising, this temperature is maintained and pressurization is started. Pressurization is performed in a state where the lower die 17 and the cylindrical die 15 are supported by the support portion 23 via the support rod 21, and the pressure die 19 is moved to the lower die 17 side by the pressure drive portion 27 via the pressure rod 25. This is done by compressing and maintaining the state where a certain load is applied to the pressure die 19.

  Here, when a predetermined pressure is applied to the fluoride crystal base material 11 at the start of pressurization and the temperature and pressure at which the maximum deformation speed is generated as described above are reached, from the start of deformation of the fluoride crystal base material 11 It is thought that deformation due to recrystallization occurs.

  Thereafter, the amount of heat generated by the heating element 33 is controlled to maintain the temperature of the fluoride crystal base material 11 while maintaining a state in which a certain load is applied to the pressurizing die 19, thereby causing the deformation to proceed. During the deformation period, the contact area between the pressure die 19 and the fluoride crystal base material 11 increases, so that the pressure applied to the fluoride crystal base material 11 gradually decreases, but the deformation due to recrystallization is started. After that, the pressurization is continued as it is to deform it to a predetermined shape. Once the deformation by recrystallization is started, a pressure that does not satisfy the conditions for deformation by recrystallization may be applied at the end of the deformation.

  After being deformed to a predetermined shape, it is gradually cooled to room temperature, taken out from the molding apparatus, and subjected to various processing as necessary, thereby completing the production of the fluoride crystal molded body.

  In this embodiment, after the molding is completed, a process for removing the surface of the fluoride crystal molded body that has been in contact with the mold 13 is performed. This removes the alkali metal and alkaline earth metal element that have penetrated into the fluoride crystal molded body from the graphite of the mold 13, and the concentration of each of the alkali metal and alkaline earth metal element in the fluoride crystal molded body is 10 wtppb or less. Can be.

  Furthermore, when the material used as the fluoride crystal base material 11 is a material having a low impurity content such as a single crystal, Cr, Mn, Fe, Co, contained in the obtained fluoride crystal molded body, Each concentration of Ni, Ba, Zn, La, Ce, and Pb can be 50 wtppb or less.

  Further, when the fluoride crystal formed body is a plate-like member having a uniform thickness, the variation width of the thickness is 1 mm or less, the warpage is 0.5% or less, and the surface roughness Ra is 50 nm or less. Thus, for example, an optical member can be manufactured by lapping both sides with # 1200 abrasive grains with a large Oscar type polishing machine, followed by polishing with cerium oxide, followed by washing and drying. it can.

  In the optical member manufactured in this way, the grain size of the crystal grains excluding the base crystal which is the crystal structure of the fluoride crystal base material 11 before deformation is a uniform one of 20 mm or less.

  Further, the initial transmittance per 10 mm thickness at a wavelength of 126 nm is 65% or more, the initial transmittance per 10 mm thickness at a wavelength of 146 nm is 85% or more, and / or the initial per 10 mm thickness at a wavelength of 172 nm. It has excellent optical properties with a transmittance of 90% or more.

  Therefore, it can be used for an excimer lamp device that emits vacuum ultraviolet light having a wavelength of 125 nm to 200 nm.

  Further, the shape of such an optical member is different from that of the fluoride crystal base material 11 used. By appropriately selecting the shape of the mold 13, for example, it is possible to make the shape such that the area of the cross section in at least one direction is 350 × 350 mm or more, and the total length of the outer periphery of the cross section is 1600 mm or more. Further, the thickness in the direction orthogonal to the cross section can be 3 to 20 mm.

  According to the method for manufacturing a fluoride crystal shaped body as described above, the fluoride crystal base material 11 is deformed by heating and pressurizing, so that it can be formed into a shape different from that of the fluoride crystal base material 11, and a single crystal is grown. Therefore, even a large member that cannot be directly manufactured can be easily manufactured.

  During the molding, the fluoride crystal base material 11 is pressurized to start deformation by recrystallization, and then deformed to a predetermined shape, so that the crystal structure is deformed by slipping of the crystal structure or deformation in a molten state. Can be prevented from being violently disturbed. In particular, since deformation due to slipping of the crystal structure and deformation due to recrystallization cannot occur simultaneously, many defects are generated in the crystal structure as in the case of deformation due to slipping of the crystal structure, resulting in optical characteristics, particularly in the vacuum ultraviolet region. It is possible to easily produce a fluoride crystal molded body having excellent optical characteristics without deteriorating the light transmittance.

  Next, an example in which the thus obtained fluoride crystal molded body is used in an ultraviolet cleaning device will be described. FIG. 2 shows an ultraviolet cleaning device.

  The ultraviolet cleaning device 60 is hermetically configured and has a light source unit 63 in which a plurality of light sources 61 are disposed, and is combined with the light source unit 63 to be hermetically sealed and can accommodate an object to be cleaned 73 therein. The housing portion 71 is included.

  The light source 63 and the object-to-be-cleaned container 71 are adjacent to each other through the opening 65, and the window material 50 made of the fluoride crystal molded body manufactured as described above is attached to the opening 65. Yes. By mounting the window member 50 in a state of being hermetically sealed around the entire periphery of the opening 65, airtightness is ensured independently of the interior of the light source section 63 and the interior of the cleaning object storage section 71.

  Here, as the light source 61, for example, a vacuum ultraviolet light source such as a Xe excimer lamp, a Kr excimer lamp, or an Ar excimer lamp that irradiates vacuum ultraviolet light having a wavelength of 125 nm to 200 nm is used. Since these light sources 61 are usually tube-shaped discharge tubes, it is preferable to arrange a plurality of light sources in parallel as necessary in order to irradiate a large area with uniform illuminance. Note that the distance between the light source 61 and the window member 50 is approximately several tens of millimeters.

  The cleaning object accommodating portion 71 is provided with a support member 75 inside, and the cleaning object 73 is placed on the support member 75 so that the light source 61 faces the window member 50. It is configured. The cleaning object 73 is, for example, a large-diameter semiconductor wafer, a liquid crystal display glass substrate, or the like. The distance between the object to be cleaned 73 and the window member 50 is about several tens of millimeters.

  In the ultraviolet cleaning device 60, the object to be cleaned 73 is accommodated in the object to be cleaned accommodating portion 71, and the light source portion 63 and the object to be cleaned accommodating portion 71 are closed in an airtight manner through the window member 50. Light cleaning is performed by irradiating the object 73 with light from the light source 61.

  At the time of cleaning, in order to suppress the attenuation of the light beam by the residual gas such as oxygen and to prevent the light source 61 from being consumed by the active species such as ozone generated by the light irradiation, a light source unit is used by using a gas supply unit and an exhaust unit (not shown). The interior of 63 is replaced with an inert gas such as nitrogen.

  According to such an ultraviolet cleaning device 60, since the fluoride crystal molded body is used as the window member 50 disposed between the light source section 63 and the object to be cleaned 73, vacuum ultraviolet light is transmitted with high transmittance. In other words, the object to be cleaned 73 can be effectively cleaned.

  And since this window material 50 is formed into a plate shape from the fluoride crystal base material 11 and the area of the transmission surface is sufficiently wide formed by one window material 50, a large object to be cleaned Even in the case of cleaning 73, it is possible to arrange one window member 50 in one opening 65. Therefore, compared to the conventional case where a large-sized window is configured by combining a plurality of small window materials, there is no need for a joining member or a cross-shaped support member for the combination, and the shadow portion of these members is not necessary. The problem of not being irradiated with light can be avoided. In addition, since the seal length between the window member 50 and the opening 65 can be shortened, it is easy to ensure the airtightness of the light source unit 63 and the cleaning object storage unit 71.

  Therefore, according to such an ultraviolet cleaning device 60, it is easy to efficiently clean a large object 73 such as a semiconductor wafer having a diameter of 300 mm or a large area liquid crystal display substrate, and the airtightness is ensured. It is easy to improve durability.

  In addition, the obtained fluoride crystal molded body can be used for an optical device system such as an astronomical telescope for terrestrial use or satellite. For example, as shown in the conceptual diagram of FIG. 12, a fluoride crystal molded body can be used as the objective lens 102 of the telescope 100 including the objective lens 102 and the eyepiece 104 supported by the lens barrel 106.

  Examples will be described below.

[Example 1]
<Preparation of calcium fluoride crystal base material>
A calcium fluoride ingot which is a substantially single crystal grown by the Bridgman method was prepared, and a cylindrical sample having a diameter of 30 mm and a thickness of 10 mm was cut out from a part thereof. The two surfaces facing each other in the thickness direction of this sample are precisely polished so that the parallelism is within 10 seconds, the flatness per side is within 6 Newton rings, and the surface roughness (rms) per side is 10 angstroms or less. In addition, finish polishing with high-purity SiO ₂ powder was performed so that the abrasive that would cause surface absorption did not remain.

  The transmittance of this sample in the wavelength range from 200 nm to 120 nm was measured with a vacuum ultraviolet spectrophotometer. The result is shown in FIG. Here, it was confirmed that the reflection including transmittance at a wavelength of 126 nm was 65% or more, the light transmittance at a wavelength of 146 nm was 85% or more, and the light transmittance at a wavelength of 172 nm was 90% or more.

Next, to this sample, after the ArF excimer laser energy density 50 mJ / cm ² / pulse to ¹⁰⁵ pulse irradiation, the transmittance was measured in the wavelength range of 200nm from 800 nm. The result is shown by line A in FIG.

  Next, apart from this sample, a block having a diameter of 150 mm and a thickness of 250 mm was cut out from a single crystal ingot, and the surface contamination was removed with an alcohol such as methanol to obtain a crystal base material 11.

<Heat and pressure molding>
The crystal base material 11 was molded using a molding apparatus as shown in FIG.

The crystal base material 11 was housed in a carbon mold 13 having a diameter of 500 mm and a height of 300 mm, placed on the center of the lower mold 17, and the pressure mold 19 was brought into contact with the top. The stainless steel chamber 10 was sealed and evacuated from the vacuum exhaust part 39 to 10-1 Pa or less, and then N ₂ gas was introduced from the atmosphere gas introduction part 37 to maintain the inside in a nitrogen atmosphere of 0.92 MPa.

  Next, while heating with the heat generating body 33, it shape | molded by applying a load with the pressure rod 25, and heating and pressurizing, and measured the deformation amount. The temperature change at the time of molding is shown by a line T in FIG. 5, and the deformation amount is shown by a line V in FIG. The pressurization period is added to the upper part of FIG.

  In this heat and pressure molding, first, heating is performed by a heating element (heater) 33, the temperature in the heat insulating frame 31 containing the molding die 13 is raised at a constant rate of temperature rise, and the temperature reaches 20 ° C. Then, pressurization was started (the process until reaching 20 ° C. was omitted in FIG. 5). The load applied to the pressure rod 25 during the pressure period was 38 ton and constant load.

  In this state, the crystal base material 11 was deformed by continuing the temperature increase at a constant temperature increase rate while applying a constant load to the pressure rod 25. During the deformation period, the amount of deformation per unit time in the load direction gradually increases, the increase in amount of deformation per unit time ends 190 minutes after the start of heating, and the temperature at which the amount of deformation per unit time is maximum is 1000. It was a degree.

  Then, after the temperature of the crystal base material 11 reached 1000 ° C., it was maintained at 1000 ° C. until the deformation was completed, and the pressurization was continued, and the deformation was completed in about 270 minutes after the start of heating. Thereafter, the crystal molded body was taken out by gradually cooling to room temperature. The obtained crystal formed body had a diameter of 500 mm and a height of 22 mm.

<Evaluation of optical properties>
As shown in FIG. 6, a molded sample 53 having a diameter of 30 mm and a thickness of 10 mm was collected from the periphery of the obtained crystal molded body 51. The two surfaces facing the thickness direction of the molded sample 53 have a parallelism within 10 seconds, a flatness per surface within 6 Newton rings, and a surface roughness (rms) per surface of 10 angstroms or less. Precision polishing was performed, and further, finish polishing with high-purity SiO ₂ powder was performed so that an abrasive that would cause surface absorption did not remain.

  The transmittance of this molded sample in the wavelength range of 200 nm to 120 nm was measured with a vacuum ultraviolet spectrophotometer. The results are shown in line B of FIG. This molded sample has a reflection including transmittance at a wavelength of 126 nm of 65% or higher, a light transmittance of 146 nm at a wavelength of 85% or higher, and a light transmittance at a wavelength of 172 nm of 90% or higher. It was.

Then, an ArF excimer laser energy density 50 mJ / cm ² / pulse was 10 ⁵ pulses irradiated to the molded samples was measured for transmittance in a wavelength range of 200nm from 800 nm. The result is shown by line B in FIG. From the measurement results of the transmittance, it was found that the molded sample had a transmittance substantially equal to that of the crystal base material 11 before molding, and the increase in induced absorption accompanying the molding was suppressed.

  Next, when each concentration of the alkali metal element and alkaline earth metal element contained in this molded sample was measured, it was 100 wtppb or less, respectively. Moreover, when each density | concentration of Cr, Mn, Fe, Co, Ni, Ba, Zn, La, Ce, and Pb contained in this shaping | molding sample was measured, it was 50 wtppb or less, respectively.

<Collecting plate materials>
A 350 mm square window material 50 was cut out from the obtained molded body and mounted as the window material 50 in an opening 50 of an ultraviolet cleaning device as shown in FIG. Using this ultraviolet cleaning device, the object to be cleaned could be cleaned by irradiating it with ultraviolet rays through the window material 50.

図７に、これらの結晶母材について得られた最大変形温度とその圧力の関係を点
◆で示し、それらの点から最小二乗法による近似直線Ｆを作成した。なお、結晶
母材の変形が進むと、一定荷重を受けている結晶母材の部分の面積が増加するので、圧力は徐々に低下する。それゆえ、変形（成形）完了時点の圧力と温度を図７に点■で示し、それらの点から最小二乗法による近似直線Ｌを作成した。 [Example 2]
Except that the load applied to the calcium fluoride crystal base material 11 was changed, the prepared five calcium fluoride crystal base materials (No. 1 to No. 5) were subjected to five types of loads in the same manner as in Example 1. Molded below. With respect to the molding conditions under these loads, the pressure receiving area of the crystal base material 11 is calculated from the shape and deformation amount of the original crystal base material 11, and each of the pressure receiving area and the load applied to the pressure rod 25 is used to calculate each pressure receiving area. The pressure at the time point was calculated. Then, the temperature (maximum deformation temperature) and pressure when the deformation amount per unit time is maximized are set to five crystal base materials No. The following table shows 1-5.

In FIG. 7, the relationship between the maximum deformation temperature and the pressure obtained for these crystal base materials is shown by points ♦, and an approximate straight line F by the least square method was created from these points. Note that as the deformation of the crystal base material proceeds, the area of the portion of the crystal base material that receives a constant load increases, so the pressure gradually decreases. Therefore, the pressure and temperature at the time when deformation (molding) is completed are indicated by points (2) in FIG. 7, and an approximate straight line L by the least square method is created from these points.

  From this result, it became clear that the correlation between the pressure P and the temperature T at the time when the deformation amount per unit time is maximum is lower as the pressure is higher.

  Moreover, the straight line which connects each * point shown in FIG. 7 is represented by the following formula | equation (5)-(8), as shown in FIG.

1125 ≦ T ≦ 1205 (° C.):
−11.5 × P (MN / m ² ) + 1285 = T (° C.) (5)
970 ≦ T ≦ 1125 (° C.):
−22.3 × P (MN / m ² ) + 1435 = T (° C.) (6)
968 ≦ T ≦ 970 (° C.):
−0.289 × P (MN / m ² ) + 976 = T (° C.) (7)
883 ≦ T ≦ 968 (° C.):
-12.2 × P (MN / m ² ) + 1306 = T (° C.) (8)

  Therefore, when using a calcium fluoride crystal as the crystal base material 11, a deformation condition is set such that the pressure P and the temperature T applied to the crystal base material 11 satisfy at least one of the expressions (5) to (8). Then, since the crystal base material 11 starts to be deformed by recrystallization, it can be formed into a desired shape while suppressing deterioration of optical characteristics such as a decrease in transmittance and an increase in induced absorption.

  Crystal matrix No. 1-No. For No. 5, the upper surface and the lower surface of the formed crystal were observed. In either case, a large number of crystal grain boundaries were observed on the upper and lower surfaces of the molded body (see FIGS. 9A and 9B). Further, the crystal orientation was measured by a single crystal orientation rapid measuring device RASCO (manufactured by Rigaku Corporation). As a result, since the crystal orientation of the crystal grains of the compact was random, it was found that the compact was a polycrystal. This indicates that recrystallization has occurred.

  Further, since it is clear that recrystallization occurs more easily as the pressure is higher and the temperature is higher, the pressure P and the temperature T applied to the crystal base material 11 are determined from the boundary values represented by the equations (5) to (8). Similarly, in the region on the high pressure / high temperature side, it is considered that recrystallization has occurred in the same manner, so that deformation by recrystallization can be started according to the method of the embodiment. That is, even when the pressure P and the temperature T applied to the crystal base material 11 are set so as to satisfy at least one of the conditions of the formulas (1) to (4), deformation by recrystallization can be similarly started. . Here, the temperature T in the formulas (1) to (4) is in a range lower than the melting point of the crystal base material 11, and the pressure P is a range in which the crystal base material 11 does not cause mechanical breakdown such as buckling at the temperature T. Is desirable.

[Example 3]
In Example 3, after heating the calcium fluoride crystal base material 11 to 1050 ° C., a 38 ton load was applied, and the crystal base material 11 was continuously deformed to the target shape while keeping the temperature and load constant. At this time, the pressure at the start of deformation was 21.1 MN / m ² . The pressure and temperature values are shown in Fig. 8 (Ex. 3). The other conditions were the same as in Example 1, and a crystal molded body 51 was prepared. From the obtained crystal molded body 51, a molded body measurement sample 53 was manufactured.

After the energy density of 50mJ / cm ² 10 ⁵ pulses irradiated per pulse an ArF excimer laser with a wavelength of 193nm in the molded body measurement sample 53, the transmittance was measured in the wavelength range of 200nm from 800 nm. The result is shown by line E in FIG.

  The values of the heating temperature and the pressure at the start of deformation in Example 3 satisfy the expressions (2) and (3). By starting the deformation by recrystallization under these conditions, the increase in induced absorption is suppressed. It was found that the crystal base material can be formed into a desired shape.

[Example 4]
In Example 4, after heating the crystal base material 11 to 1100 ° C., a 27 ton load was applied, and the crystal base material 11 was continuously deformed to the target shape while keeping the temperature and load constant. At this time, the pressure at the start of deformation was 15.0 MN / m ² . The pressure and temperature values are shown in Fig. 8 (Ex. 4). The other conditions were the same as in Example 1, and a crystal molded body 51 was prepared. From the obtained crystal molded body 51, a molded body measurement sample 53 was manufactured.

After the molded body sample for measuring 53 to 10 ⁵ pulse irradiation at an energy density 50 mJ / cm ² per pulse to ArF excimer laser with a wavelength of 193 nm, in Figure 4 the result of measuring the transmittance in the wavelength range of 200nm from 800nm Indicated by line F.

  The heating temperature and the pressure value at the start of deformation in Example 4 satisfy Expression (2), and the crystal base material is suppressed while suppressing the increase in induced absorption by starting the deformation by recrystallization under these conditions. It was found that can be formed into a desired shape.

[Comparative Examples 1 and 2]
Crystal forming in the same manner as in Example 3 except that the pressure and temperature applied to the crystal base material 11 at the time of heat and pressure forming were 600 ° C. and 38 ton in Comparative Example 1, and 600 ° C. and 76 ton in Comparative Example 2. A body 51 was produced, and a molded body measurement sample 53 was produced from the obtained crystal molded body 51. The pressure during the start of deformation is 21.1MN / ^{m 2} in Comparative Example 1 was 42.2MN / ^{m 2} in Comparative Example 2. The pressure and temperature values are shown in Fig. 8 (Com.1, Com.2).

FIG. 3 shows the result of measuring the transmittance in the wavelength range of 300 nm to 120 nm of each sample 53 for measuring a compact using a vacuum ultraviolet spectrophotometer. An ArF excimer laser having a wavelength of 193 nm was measured with an energy density of 50 mJ / pulse. FIG. 4 shows the result of measuring the transmittance in the wavelength range from 800 nm to 200 nm after irradiating 10 ⁵ pulses at cm ² . In FIG. 4, line C shows the result of Comparative Example 1, and line D shows the result of Comparative Example 2.

  The compacts molded at a low temperature as in Comparative Examples 1 and 2 have low transmittance for light having a short wavelength as shown in FIG. 3, and large induced absorption is caused by irradiation with an ArF excimer laser as shown in FIG. It was suggested that there were many defects in the crystal structure.

[Example 5]
Next, a molded body having a diameter of 50 mm and a height of 20 mm was formed from a calcium fluoride single crystal base material having a diameter of 30 mm and a height of 50 mm, and it was confirmed whether deformation due to recrystallization occurred.

Molding was performed in the same manner as in Example 1 except that the load applied by the pressure rod 25 was 1.5 ton. The temperature at which the amount of deformation per unit time was maximum was 970 degrees, the pressure at that time was 20.8 MN / m ² , and the molding was completed in a molding time of 30 minutes. This result was the same as that in the case where the pressure in Example 2 was 20.8 MN / m ² .

  The photograph of the upper surface of the obtained molded body is shown in FIG. 9 (a), and the photograph of the lower surface is shown in (b). In this photo, the grain boundaries were traced with a pencil to make the crystal grains easy to see. The crystal orientation specified by the Laue method was measured using a single crystal orientation rapid measurement apparatus RASCO (manufactured by Rigaku Corporation). In the figure, the crystal orientation is indicated by arrows and numerical values. In addition, as shown in FIG. 11, the grain boundary is not seen at all in the single crystal base material before forming shown for reference.

  As is clear from FIGS. 9A and 9B, the compact obtained from the single crystal base material has a large number of crystal grain boundaries, and the crystal orientation of each crystal grain is random. From the results, it was confirmed that it was a polycrystal and recrystallization occurred. Crystal base material No. 2 of Example 2 1-No. The molded body obtained from No. 5 was observed as shown in FIGS. 9 (a) and 9 (b).

  As shown in FIG. 10, the numerical value of the crystal orientation in the figure is a deviation angle α of the surface from the (111) plane, and the direction of the arrow is the x axis when the <111> axis is projected onto the xy plane. Shows the azimuth angle β from.

  In the above embodiment, an example in which a calcium fluoride crystal base material is formed has been described. However, other fluoride crystal base materials can be manufactured by modifying the above embodiment.

  A calcium fluoride crystal base material having a desired shape can be easily formed without deteriorating the optical properties of the calcium fluoride crystal base material. The obtained molded body is extremely useful as an optical component of an optical device that uses vacuum ultraviolet light or a light cleaning device.

DESCRIPTION OF SYMBOLS 10 Chamber 11 Fluoride crystal base material 13 Molding die 17 Lower die 19 Pressing die 23 Support part 27 Pressurizing drive part 33 Heating element 50 Window material 60 Ultraviolet-ray cleaning apparatus

Claims (9)

  An optical member comprising a fluoride crystal molded body, characterized in that the light transmittance per 10 mm thickness at a wavelength of 172 nm is 90% or more, and the cross-sectional area in at least one direction is 350 × 350 mm or more.   The optical member according to claim 1, wherein a light transmittance per 10 mm thickness at a wavelength of 146 nm is 85% or more.   3. The optical member according to claim 1, wherein a light transmittance per 10 mm thickness at a wavelength of 126 nm is 65% or more.   4. The optical member according to claim 1, wherein an overall length of the outer periphery of the cross section is 1600 mm or more. 5.   Each concentration of the alkali metal element and alkaline earth metal element contained is 100 wtppb or less, and each concentration of Cr, Mn, Fe, Co, Ni, Ba, Zn, La, Ce, Pb contained is The optical member according to claim 1, wherein the optical member is 50 wtppb or less.   An optical device comprising the optical member according to claim 1 and a vacuum ultraviolet light source, wherein the optical member is disposed in an optical path of vacuum ultraviolet light emitted from the vacuum ultraviolet light source.   The optical apparatus according to claim 6, wherein the vacuum ultraviolet light source is a Xe excimer lamp, a Kr excimer lamp, or an Ar excimer lamp.   A window material comprising the optical member according to claim 1 and a vacuum ultraviolet light source, and the vacuum ultraviolet light emitted by the vacuum ultraviolet light source is transmitted through the window material to irradiate the member to be cleaned. An ultraviolet cleaning device.   9. The ultraviolet cleaning apparatus according to claim 8, wherein the vacuum ultraviolet light source is a Xe excimer lamp, a Kr excimer lamp, or an Ar excimer lamp.

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