WO2009140829A1 - Dispositif d’éclairage à led présentant une faible atténuation et un haut rendement lumineux et procédé de fabrication associé - Google Patents

Dispositif d’éclairage à led présentant une faible atténuation et un haut rendement lumineux et procédé de fabrication associé Download PDF

Info

Publication number
WO2009140829A1
WO2009140829A1 PCT/CN2008/071409 CN2008071409W WO2009140829A1 WO 2009140829 A1 WO2009140829 A1 WO 2009140829A1 CN 2008071409 W CN2008071409 W CN 2008071409W WO 2009140829 A1 WO2009140829 A1 WO 2009140829A1
Authority
WO
WIPO (PCT)
Prior art keywords
aluminum substrate
transparent cover
lighting device
led lighting
attenuation
Prior art date
Application number
PCT/CN2008/071409
Other languages
English (en)
Chinese (zh)
Inventor
段永成
Original Assignee
Duan Yongcheng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Duan Yongcheng filed Critical Duan Yongcheng
Publication of WO2009140829A1 publication Critical patent/WO2009140829A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Definitions

  • the present invention relates to a semiconductor device, particularly an LED illumination device and a method of fabricating the same.
  • Prior art prior art LED lighting devices of the prior art are generally fabricated by using white LEDs that have been packaged, and white LEDs typically use blue, violet or ultraviolet light to excite RGB fluorescent materials to obtain white light, such as blue light emitting materials. Ways of YAG fluorescent substances, such as in Chinese patent applications
  • the method of formulating a fluorescent substance into a liquid state and adding a fluorescent substance to the luminescent material to cover the luminescent material generally has the following disadvantages: 1.
  • the precipitation of the fluorescent substance is difficult to control uniformly, and the fluidity thereof causes the spot of the finished LED to be poor. The consistency is not good in mass production.
  • Most of the fluorescent substances are deposited under the side of the luminescent material, which does not contribute to the luminescence, causing serious waste. 3.
  • the fluorescent substance directly contacts the luminescent material, and the heat generated by the luminescent material causes The fluorescent material has a large attenuation, thus shortening the service life.
  • How to form a uniform phosphor coating around the luminescent crystal to produce a white light diode with uniform illumination and uniformity, and to minimize the amount of fluorescent material and simplify the fluorescent substance The curing process of the film to reduce production costs, The prior art does not provide a good solution.
  • the object of the present invention is to: 1) provide a luminescent phosphor and a luminescent material Therefore, the heat emitted by the luminescent material does not cause attenuation of the fluorescent substance, thereby improving the life; 2) directly splicing the LED luminescent material on the aluminum plate, which can reduce the production cost of the LED illuminating device, a low attenuation high light LED lighting device and preparation method.
  • the present invention employs the following technical solution: it comprises disposing an aluminum substrate on a heat dissipation plate, and fixing a blue LED chip on the aluminum substrate, the outer cover being a transparent cover.
  • the transparent cover is filled with a fluorescent substance.
  • the LED chip is directly bonded to the aluminum substrate.
  • a circuit is applied to the aluminum substrate.
  • the fluorescent substance is: YAG or TAG.
  • the fluorescent material in the transparent cover is molded in one shot with the transparent cover material.
  • a filling substance is injected between the aluminum substrate and the transparent cover; the filling material may be silica gel.
  • the preparation process is as follows: a. injecting a bonding material on the aluminum substrate;
  • Steps a and b can also be done by soldering.
  • the invention separates the fluorescent substance from the luminescent material, so that the heat emitted by the luminescent material does not cause attenuation of the fluorescent substance, and the life of the LED illuminating device; at the same time, there is no fluorescent substance on the side of the luminescent material, which reduces the scattering of the fluorescent substance and causes the downward light.
  • the transparent cover is made of a special mold, the shape is determined according to the luminous intensity distribution of the LED chip, and the size is consistent, so that the uniformity of each LED lighting device produced in batches is achieved. well.
  • the shape of the transparent cover is accurately calculated by optical design, which can improve the light extraction efficiency.
  • Figure 1 is a front cross-sectional view of the present invention.
  • an aluminum substrate (4) is disposed on the heat dissipation plate (5), and the LED chip (1) is bonded on the aluminum substrate (4); the positive and negative of the LED chip (1) is performed with the gold wire (2)
  • the pole is connected to the circuit on the aluminum substrate (4); when the transparent cover (3) is formed, the fluorescent substance (6) is once formed; the transparent cover (3) containing the fluorescent substance (6) is fixed on the LED chip, and is required
  • a silicone or other transparent filler material is injected between the aluminum substrate (4) and the transparent cover (3).
  • the surface of the luminescent material (4) is covered with the liquid fluorescent substance (6), and the fluorescent substance (6) is placed in the transparent cover (3) to make the fluorescent substance (6)
  • the LED chip (1) is separated, and the LED chip (1) is directly bonded to the aluminum substrate.
  • the luminescent material is used, such as blue GaN.
  • Transparent cover such as acrylic, PC, glass, etc.
  • Use fluorescent substances such as YAG.
  • Steps a and b can also be done by soldering.
  • the invention can be applied to various illumination devices such as LED fluorescent lamps, LED street lamps, LED spotlights, LED desk lamps, LED bulbs and the like.
  • illumination devices such as LED fluorescent lamps, LED street lamps, LED spotlights, LED desk lamps, LED bulbs and the like.
  • the practice of the present invention is not limited to the manner disclosed in the above preferred embodiments.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

La présente invention concerne un dispositif d’éclairage à LED qui présente une faible atténuation et un haut rendement lumineux et qui comprend une plaque de dissipation thermique (5), un substrat en aluminium (4) agencé sur la plaque de dissipation thermique, une puce à LED bleue (1) fixée sur le substrat en aluminium et un couvercle transparent (3) qui sert de couvercle extérieur. Les étapes de fabrication consistent : à fournir un matériau liant sur le substrat en aluminium; à placer un matériau lumineux sur le matériau liant afin de fixer le matériau lumineux avec le substrat en aluminium; à faire cuire le matériau liant; à connecter les électrodes du matériau luminescent aux électrodes du substrat en aluminium au moyen de lignes en or (2); à mouler le couvercle transparent à partir d’un mélange du matériau du couvercle transparent et du matériau fluorescent (6) dans le moule; à fixer le couvercle transparent sur le substrat en aluminium; à fixer le substrat en aluminium sur la plaque en aluminium de dissipation thermique; à injecter un matériau de remplissage dans l’espace entre le substrat en aluminium et le couvercle transparent; et à faire cuire ou faire sécher à température normale.
PCT/CN2008/071409 2008-05-23 2008-06-23 Dispositif d’éclairage à led présentant une faible atténuation et un haut rendement lumineux et procédé de fabrication associé WO2009140829A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA2008100673580A CN101338865A (zh) 2008-05-23 2008-05-23 一种低衰减高光效led照明装置及制备方法
CN200810067358.0 2008-05-23

Publications (1)

Publication Number Publication Date
WO2009140829A1 true WO2009140829A1 (fr) 2009-11-26

Family

ID=40212999

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2008/071409 WO2009140829A1 (fr) 2008-05-23 2008-06-23 Dispositif d’éclairage à led présentant une faible atténuation et un haut rendement lumineux et procédé de fabrication associé

Country Status (2)

Country Link
CN (1) CN101338865A (fr)
WO (1) WO2009140829A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102020851B (zh) 2009-09-16 2013-10-16 大连路明发光科技股份有限公司 一种光转换柔性高分子材料及其用途
CN101894833A (zh) * 2010-06-21 2010-11-24 深圳市瑞丰光电子股份有限公司 Led模组及led照明装置
TWI441361B (zh) * 2010-12-31 2014-06-11 Interlight Optotech Corp 發光二極體封裝結構及其製造方法
CN102679199A (zh) * 2011-03-08 2012-09-19 威力盟电子股份有限公司 发光二极管球泡灯及其制造方法
CN102738351B (zh) * 2011-04-02 2015-07-15 赛恩倍吉科技顾问（深圳）有限公司 发光二极管封装结构及其制造方法
CN102305369A (zh) * 2011-05-10 2012-01-04 无锡科依德光电科技有限公司 建筑物墙面隐形数码点光源系统
CN102252192A (zh) * 2011-06-20 2011-11-23 苏州红壹佰照明有限公司 一种yag荧光led球泡灯
CN102818150B (zh) * 2012-07-23 2014-08-13 贵州光浦森光电有限公司 一种通用led灯泡的构成方法及一种通用led灯泡
CN102798005B (zh) * 2012-07-23 2014-08-20 贵州光浦森光电有限公司 通用型led灯泡的构建方法及卡环结构方式的led灯泡

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040069993A1 (en) * 2001-06-11 2004-04-15 Citizen Electronics Co., Ltd. Light emitting device and manufacturing method thereof
CN1838440A (zh) * 2006-03-03 2006-09-27 中山大学 一种白光led及其封装方法
CN1858920A (zh) * 2006-06-05 2006-11-08 江苏奥雷光电有限公司 一种白光led灯的封装方法
WO2007057983A1 (fr) * 2005-11-21 2007-05-24 Matsushita Electric Works, Ltd. Dispositif luminescent
CN1992357A (zh) * 2005-12-30 2007-07-04 深圳市蓝科电子有限公司 一种低衰减白光二极管制造方法
CN101022145A (zh) * 2006-02-15 2007-08-22 深圳市量子光电子有限公司 发光二极管
CN101124683A (zh) * 2004-12-24 2008-02-13 京瓷株式会社 发光装置以及照明装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040069993A1 (en) * 2001-06-11 2004-04-15 Citizen Electronics Co., Ltd. Light emitting device and manufacturing method thereof
CN101124683A (zh) * 2004-12-24 2008-02-13 京瓷株式会社 发光装置以及照明装置
WO2007057983A1 (fr) * 2005-11-21 2007-05-24 Matsushita Electric Works, Ltd. Dispositif luminescent
CN1992357A (zh) * 2005-12-30 2007-07-04 深圳市蓝科电子有限公司 一种低衰减白光二极管制造方法
CN101022145A (zh) * 2006-02-15 2007-08-22 深圳市量子光电子有限公司 发光二极管
CN1838440A (zh) * 2006-03-03 2006-09-27 中山大学 一种白光led及其封装方法
CN1858920A (zh) * 2006-06-05 2006-11-08 江苏奥雷光电有限公司 一种白光led灯的封装方法

Also Published As

Publication number Publication date
CN101338865A (zh) 2009-01-07

Similar Documents

Publication Publication Date Title
WO2009140829A1 (fr) Dispositif d’éclairage à led présentant une faible atténuation et un haut rendement lumineux et procédé de fabrication associé
KR102071463B1 (ko) 형광체 변환 층에 높은 열 전도도 입자를 갖는 led 및 그 제조 방법
TWI393841B (zh) 背光用發光二極體之寬發光透鏡
CN104253194A (zh) 一种芯片尺寸白光led的封装结构及方法
CN101826590B (zh) 一种透镜注荧光胶的led灯及其封装方法
TW201142355A (en) Composite film for light emitting apparatus, light emitting apparatus and method for fabricating the same
CN101123286A (zh) 发光二极管封装结构和方法
KR20070004267A (ko) 발광 다이오드 및 이를 제조하기 위한 방법
WO2014101602A1 (fr) Structure de mise en boîtier de led utilisant une couche de poudre fluorescente distante et procédé de fabrication associé
TWM407494U (en) LED package structure
TW201338215A (zh) 發光二極體封裝結構之製造方法
CN106992241A (zh) Led灯条及led面光源模组
CN105633248B (zh) 一种led灯及其制备方法
CN201638850U (zh) 一种透镜注荧光胶的led灯
KR101102237B1 (ko) 엘이디 패키지, 엘이디 패키지의 제조방법, 및 백라이트 유니트와 조명장치
JPWO2010023992A1 (ja) 発光装置及びその製造方法
JP2010206208A (ja) 発光ダイオードのパッケージ構造及びその製造方法
JP2004343149A (ja) 発光素子および発光素子の製造方法
WO2011029219A1 (fr) Source lumineuse à del tridimensionnelle à support de fixation de plaquette de del et son procédé de mise en boîtier
CN100463239C (zh) 发光半导体组件封装结构及其制造方法
CN208315595U (zh) Csp led的封装结构
US20150014733A1 (en) Led lighting apparatus and method for fabricating wavelength conversion member for use in the same
CN201228951Y (zh) 低衰减高光效led照明装置
KR101724703B1 (ko) 렌즈 패턴이 형성된 화이트 발광용 칩 패키지
WO2007076670A1 (fr) Procede de fabrication d'une diode electroluminescente blanche a faible attenuation

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08757818

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08757818

Country of ref document: EP

Kind code of ref document: A1