WO2009112544A3 - Verfahren zur herstellung monokristalliner solarzellen mit rückseitiger kontaktstruktur - Google Patents

Verfahren zur herstellung monokristalliner solarzellen mit rückseitiger kontaktstruktur Download PDF

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Publication number
WO2009112544A3
WO2009112544A3 PCT/EP2009/052908 EP2009052908W WO2009112544A3 WO 2009112544 A3 WO2009112544 A3 WO 2009112544A3 EP 2009052908 W EP2009052908 W EP 2009052908W WO 2009112544 A3 WO2009112544 A3 WO 2009112544A3
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WO
WIPO (PCT)
Prior art keywords
crack
wafer
back surface
solar cells
surface contact
Prior art date
Application number
PCT/EP2009/052908
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English (en)
French (fr)
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WO2009112544A2 (de
Inventor
Hans-Joachim Krokoszinski
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Ersol Solar Energy Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ersol Solar Energy Ag filed Critical Ersol Solar Energy Ag
Priority to EP09720605A priority Critical patent/EP2266147A2/de
Publication of WO2009112544A2 publication Critical patent/WO2009112544A2/de
Publication of WO2009112544A3 publication Critical patent/WO2009112544A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung monokristalliner Solarzellen mit rückseitiger Kontakt Struktur sowie einer im Waferverbund vorliegenden Vielzahl von annähernd flächengleichen Teilzellendioden mit lokalen pn-Übergängen, welche zum Erhalt einer erhöhten Ausgangsspannung in Serie geschaltet werden, wobei zwischen benachbarten Teilzellendioden in einem streifenförmigen Bereich (34), der ohne Dotierung verbleiben kann, ein Riss (35) durch den Wafer hindurch erzeugt wird und durch dessen Überbrückung mit gelöteten oder geklebten Metallbändchen (103) eine Verbindung der Teilzellendioden zur Serienschaltung erfolgt. Erfindungsgemäß wird der Wafer nach in an sich bekannter Weise realisierter Zellprozessierung einseitig Stoff schlüssig mit einer Ausdehnungsplatte (100) verbunden. Es erfolgt die Isolierrissausbildung dann von der der Ausdehnungsplatte gegenüberliegenden Waf erseite. Weiterhin wird die Ausdehnungsplatte mit Wafer erhitzt. In den sich ausdehnungsbedingt vergrößernden Riss oder Spalt wird dann ein Isolierstoff zum Erhalt einer dauerhaften elektrischen Isolation eingebracht.
PCT/EP2009/052908 2008-03-14 2009-03-12 Verfahren zur herstellung monokristalliner solarzellen mit rückseitiger kontaktstruktur WO2009112544A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP09720605A EP2266147A2 (de) 2008-03-14 2009-03-12 Verfahren zur herstellung monokristalliner solarzellen mit rückseitiger kontaktstruktur

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008014418.5 2008-03-14
DE102008014418 2008-03-14
DE102008021355.1A DE102008021355B4 (de) 2008-03-14 2008-04-29 Verfahren zur Herstellung monokristalliner Solarzellen mit rückseitiger Kontaktstruktur
DE102008021355.1 2008-04-29

Publications (2)

Publication Number Publication Date
WO2009112544A2 WO2009112544A2 (de) 2009-09-17
WO2009112544A3 true WO2009112544A3 (de) 2009-12-23

Family

ID=41011256

Family Applications (1)

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PCT/EP2009/052908 WO2009112544A2 (de) 2008-03-14 2009-03-12 Verfahren zur herstellung monokristalliner solarzellen mit rückseitiger kontaktstruktur

Country Status (3)

Country Link
EP (1) EP2266147A2 (de)
DE (1) DE102008021355B4 (de)
WO (1) WO2009112544A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011012275A1 (de) * 2011-02-24 2012-08-30 Ritek Corp. Verfahren zum Schneiden eines Solarzellenpanels und Ausrüstung dafür
DE102011077696A1 (de) * 2011-06-17 2012-12-20 Robert Bosch Gmbh Solarzellenanordnung und Verfahren zu deren Herstellung
DE102012220221B4 (de) 2012-11-07 2024-03-07 Meyer Burger (Germany) Gmbh Solarzellenanordnung und Verfahren zu deren Herstellung
WO2015045242A1 (ja) 2013-09-25 2015-04-02 パナソニックＩｐマネジメント株式会社 太陽電池、太陽電池モジュールおよび太陽電池の製造方法
US11502213B2 (en) 2016-12-30 2022-11-15 Sunpower Corporation Solar cell having a plurality of sub-cells coupled by cell level interconnection

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3151379A (en) * 1959-03-23 1964-10-06 Int Rectifier Corp Solar battery and method of making it
US3346419A (en) * 1963-11-29 1967-10-10 James E Webb Solar cell mounting
US4038104A (en) * 1976-06-07 1977-07-26 Kabushiki Kaisha Suwa Seikosha Solar battery
DE2747717A1 (de) * 1976-11-03 1978-05-11 Ibm Photoelement
EP0474349A2 (de) * 1990-08-16 1992-03-11 Eev Limited Anordnung von Solarzellen
US6248948B1 (en) * 1998-05-15 2001-06-19 Canon Kabushiki Kaisha Solar cell module and method of producing the same
JP2004001076A (ja) * 2002-03-12 2004-01-08 Hamamatsu Photonics Kk レーザ加工方法
EP1878707A1 (de) * 2006-07-14 2008-01-16 Jenoptik Automatisierungstechnik GmbH Verfahren zur Erzeugung optisch wahrnehmbarer laserinduzierter Risse in sprödem Material

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4173496A (en) 1978-05-30 1979-11-06 Texas Instruments Incorporated Integrated solar cell array
JPS5839071A (ja) 1981-08-31 1983-03-07 Japan Solar Energ Kk 太陽電池素子
US4612408A (en) * 1984-10-22 1986-09-16 Sera Solar Corporation Electrically isolated semiconductor integrated photodiode circuits and method
DE3511082A1 (de) * 1985-03-27 1986-10-02 Telefunken electronic GmbH, 7100 Heilbronn Solarzelle
JPS63211773A (ja) 1987-02-27 1988-09-02 Mitsubishi Electric Corp 化合物半導体太陽電池
US4933021A (en) 1988-11-14 1990-06-12 Electric Power Research Institute Monolithic series-connected solar cells employing shorted p-n junctions for electrical isolation
US5164019A (en) 1991-07-31 1992-11-17 Sunpower Corporation Monolithic series-connected solar cells having improved cell isolation and method of making same
EP0881694A1 (de) 1997-05-30 1998-12-02 Interuniversitair Micro-Elektronica Centrum Vzw Solarzelle und Verfahren zu ihrer Herstellung

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3151379A (en) * 1959-03-23 1964-10-06 Int Rectifier Corp Solar battery and method of making it
US3346419A (en) * 1963-11-29 1967-10-10 James E Webb Solar cell mounting
US4038104A (en) * 1976-06-07 1977-07-26 Kabushiki Kaisha Suwa Seikosha Solar battery
DE2747717A1 (de) * 1976-11-03 1978-05-11 Ibm Photoelement
EP0474349A2 (de) * 1990-08-16 1992-03-11 Eev Limited Anordnung von Solarzellen
US6248948B1 (en) * 1998-05-15 2001-06-19 Canon Kabushiki Kaisha Solar cell module and method of producing the same
JP2004001076A (ja) * 2002-03-12 2004-01-08 Hamamatsu Photonics Kk レーザ加工方法
EP1878707A1 (de) * 2006-07-14 2008-01-16 Jenoptik Automatisierungstechnik GmbH Verfahren zur Erzeugung optisch wahrnehmbarer laserinduzierter Risse in sprödem Material

Also Published As

Publication number Publication date
DE102008021355A1 (de) 2009-10-01
EP2266147A2 (de) 2010-12-29
DE102008021355B4 (de) 2020-08-20
WO2009112544A2 (de) 2009-09-17

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