WO2009104625A1 - ティップ型プローブ製造方法、ティップ型プローブ及びティップ型プローブ製造装置 - Google Patents
ティップ型プローブ製造方法、ティップ型プローブ及びティップ型プローブ製造装置 Download PDFInfo
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- WO2009104625A1 WO2009104625A1 PCT/JP2009/052733 JP2009052733W WO2009104625A1 WO 2009104625 A1 WO2009104625 A1 WO 2009104625A1 JP 2009052733 W JP2009052733 W JP 2009052733W WO 2009104625 A1 WO2009104625 A1 WO 2009104625A1
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- tip
- metal film
- type probe
- frustum
- top surface
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/18—SNOM [Scanning Near-Field Optical Microscopy] or apparatus therefor, e.g. SNOM probes
- G01Q60/22—Probes, their manufacture, or their related instrumentation, e.g. holders
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/135—Means for guiding the beam from the source to the record carrier or from the record carrier to the detector
- G11B7/1387—Means for guiding the beam from the source to the record carrier or from the record carrier to the detector using the near-field effect
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1409—Heads
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
- G11B2005/0005—Arrangements, methods or circuits
- G11B2005/0021—Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
- Y10T29/49043—Depositing magnetic layer or coating
Definitions
- the present invention relates to a tip type probe manufacturing method, a tip type probe, and a tip type probe manufacturing apparatus.
- Tip-type probes are widely used as elements of various devices by forming various types of functional metal films on the side surfaces.
- a tip-type probe is used as an element that forms a metal film having a light blocking function for light of a predetermined wavelength on the top surface and generates near-field light on the top surface. Further, by forming both a magnetic material or a metal film having a light shielding function and a magnetic material on the side surface, it can be used as an element for magnetic recording or near-field light assisted magnetic recording.
- the near-field light generating element is used for an optical head in an optical recording apparatus that performs high-density information recording / reproduction, an optical probe in a near-field light microscope that performs observation at high resolution, and the like. Since the near-field light technology can handle optical information in a minute region exceeding the diffraction limit of light, it is expected that high recording density and resolution that cannot be achieved by conventional optical technology can be obtained.
- Near-field light generating elements are mainly challenged to obtain a minute and powerful spot of near-field light.
- the contour shape of the optical aperture provided at the tip of the near-field light generating element is assumed to be a triangle, and the polarization direction of the incident light and one side of the triangle are orthogonal to each other, thereby localizing the one side. Strong near-field light is generated (triangular aperture method).
- a metal film is formed on two opposing surfaces of the four side surfaces of a quadrangular pyramid, and the two surfaces have a gap equal to or less than the wavelength of light near the apex of the quadrangular pyramid.
- Each of the two metal films has a vertex with a radius of curvature of several tens of nanometers or less in the gap, and generates strong near-field light localized in the gap (bowtie antenna system).
- a tip type probe has been studied as a recording / reproducing probe of an information recording apparatus.
- the recording density of information within a single recording surface has increased.
- the recording area occupied by one bit on the recording medium decreases.
- the energy of 1-bit information is close to that of room temperature, and the recorded information is reversed or lost due to thermal fluctuation, etc. Will occur.
- the magnetism is recorded so that the direction of magnetization is in the in-plane direction of the recording medium.
- the recorded information is lost due to the thermal demagnetization described above. Is likely to occur. Therefore, in order to solve such a problem, a shift is being made to a perpendicular recording method in which a magnetization signal is recorded in a direction perpendicular to the recording medium.
- This method is a method for recording magnetic information on the principle of bringing a single magnetic pole closer to a recording medium. According to this method, the recording magnetic field is directed substantially perpendicular to the recording film.
- recording media in recent years are required to have higher density in response to needs such as recording and reproduction of a larger amount and higher density information. For this reason, in order to minimize the influence of adjacent magnetic domains and thermal fluctuations, those having a strong coercive force have begun to be adopted as recording media. For this reason, it is difficult to record information on a recording medium even in the above-described perpendicular recording system.
- This hybrid magnetic recording system is a system that uses near-field light generated by the interaction between a minute region and an optical aperture formed in a size equal to or smaller than the wavelength of light formed in the near-field optical head.
- the wavelength of light that has been limited in the conventional optical system can be reduced. It is possible to handle the optical information in the region. Therefore, it is possible to achieve a higher recording bit density than conventional optical information recording / reproducing apparatuses.
- Various types of recording heads based on the hybrid magnetic recording system described above are provided, and one of them is a magnetic recording head in which the recording density is increased by reducing the size of the light spot.
- a bow tie-shaped metal thin film is formed on the bottom of the head, and near-field light is generated by irradiating light vertically from above the recording medium, and the near-field light is superimposed on a region where a magnetic field is strongly applied. It has been proposed (Patent Document 4).
- the near-field light generating element is a flat film bow tie-shaped metal formed on the bottom of the head.
- the bow tie After the light from the laser is introduced by an optical fiber or the like, it is reflected by a mirror and irradiated to the bow tie. By doing so, near-field light is generated in the gap at the center of the bow tie. Furthermore, since this bow tie also serves as a magnetic recording element, the medium surface area heated by the near-field light and the area magnetized by the magnetic field coincide. This makes it possible to miniaturize minute spots due to near-field light to the limit and is suitable for high-density recording, but by making this bow tie structure a tip shape, it is possible to focus light more efficiently while concentrating light locally. A strong magnetic field for recording can be generated, and the manufacturing method thereof is simplified. However, the technology for actually manufacturing the above-described tip structure has not yet been put into practical use.
- JP 2001-118543 A JP-A-11-265520 JP 2002-221478 A JP 2002-298302 A (page 4-6, FIG. 1) Technical Digest of 6th international conference on nearfield optics and related techniques, the Netherlands, Aug. 27-31, 2000, p100
- the near-field light assisted magnetic recording head having a conventional structure described in Patent Document 4 is generated because a bow tie that generates both near-field light and a magnetic field is formed of a planar film formed on the bottom surface of the head. Magnetic field spreads throughout the bowtie. In the case of longitudinal recording, the gap at the center of the bow tie defines the recording density, but in the case of perpendicular recording, the size of the portion of the main pole facing the medium defines the recording density. When the bow tie is viewed from the recording medium side, the main magnetic pole is the entire side of the bow tie, so the bow tie itself needs to be miniaturized for high recording density.
- the peripheral portion of the bow tie is included in the incident light spot, and near-field light is generated not only in the central portion of the bow tie but also in the peripheral portion, and erroneous recording is performed in the peripheral portion of the bow tie.
- the structure does not have a structure capable of condensing the propagated light at the center of the bow tie and generating highly efficient near-field light.
- the bow tie in order to generate a strong magnetic field for recording locally while concentrating light efficiently without reducing the size of the bow tie, the bow tie has a predetermined angle with respect to the recording medium. Therefore, a so-called tip-type probe and a manufacturing method thereof are required.
- the present invention has been made in view of such circumstances, and does not require an advanced microfabrication technique, and is a tip type probe having a tip and bow tie structure that is easy and highly accurate at low cost while achieving downsizing. It is an object to provide a tip-type probe manufacturing method, a tip-type probe manufacturing apparatus, and a tip-type probe manufactured by them. In addition, since light can be condensed with high efficiency, near-field light can be generated efficiently and stably, and information recording can be performed stably at high density.
- a first feature of the present invention is to manufacture a tip-type probe that has a metal film on the side surface of a frustum composed of a top surface and a side surface and generates a near field from the top surface
- a tip-type probe manufacturing method comprising: forming an etching mask having a shape similar to the top surface on a substrate; and forming the frustum by isotropically etching the substrate using the etching mask A step of stopping the isotropic etching, a step of stopping the isotropic etching when the area of the top surface reaches an area capable of generating the near field, the etching mask and the side surface And the step of depositing the metal film by causing the film-forming particles to wrap around and adhere to the frustum.
- the second feature of the present invention is summarized in that the step of forming the frustum includes a step of performing isotropic etching from a contour of a contact surface between the etching mask and the substrate.
- the third feature of the present invention is that the isotropic etching enters from the contour of the contact surface between the etching mask and the substrate, so that the top surface of the frustum is directed toward the base of the frustum.
- the gist includes that the angle of the side surface with respect to the top surface sequentially changes.
- the film thickness of the metal film is controlled from the base of the frustum by controlling the directivity of the film-forming particles with respect to the substrate.
- the gist is that the thickness gradually decreases in the direction toward the surface.
- the film-forming particles are formed along a direction perpendicular to the substrate from a side opposite to the side where the substrate is disposed of the etching mask.
- the gist is that the thickness of the metal film gradually decreases from the base of the frustum toward the top surface.
- the seventh feature of the present invention is summarized in that the metal film formed on at least one of the side surfaces is made of a magnetic material.
- the eighth feature of the present invention is summarized in that the metal film formed on at least one of the side surfaces is made of a material having a light shielding function with respect to light having a predetermined wavelength.
- the ninth feature of the present invention is summarized in that the metal film formed on at least one of the side surfaces is made of a material that generates plasmon when irradiated with light of a predetermined wavelength.
- the metal film formed on at least one of the side surfaces is made of a magnetic material, and the remaining side surface is irradiated with the light shielding function material or light having a predetermined wavelength.
- the gist is that a material that generates plasmons is formed as a result.
- the eleventh feature of the present invention is that the metal film formed on at least one of the side surfaces is made of a material having a light blocking function for light of a predetermined wavelength, or plasmon is irradiated by irradiating light of a predetermined wavelength.
- the gist is that a magnetic material is formed on the remaining side surface, the material having the light shielding function, or the material that generates the plasmon.
- a twelfth feature of the present invention is that a plurality of the tip-type probes are manufactured on the same substrate by using the step of forming the frustum and the step of forming the metal film.
- the gist of the thirteenth feature of the present invention is the tip probe manufactured by the tip probe manufacturing method described in the first feature to the twelfth feature of the present invention.
- the gist of the fourteenth feature of the present invention is a tip-type probe manufacturing apparatus using the tip-type probe manufacturing method described in the first to twelfth features of the present invention.
- a fifteenth feature of the present invention is a tip-type probe manufacturing apparatus that manufactures a tip-type probe that has a metal film on the side surface of a frustum composed of a top surface and a side surface and generates a near field from the top surface.
- a mask placement portion for placing an etching mask having a shape similar to the top surface on the substrate, and a frustum formation portion for forming the frustum by isotropically etching the substrate using the etching mask;
- An isotropic etching control unit for instructing the frustum formation unit to stop the isotropic etching when the area of the top surface reaches an area capable of generating the near field; and the etching mask
- a metal film deposition unit that deposits the metal film by causing film deposition particles to wrap around and attach to the frustum.
- the present invention it is possible to manufacture easily and with high accuracy at low cost while achieving miniaturization without requiring an advanced fine processing technique.
- a probe can be provided.
- FIG. 1 shows an outline of a tip-type probe according to Embodiment 1 of the present invention.
- FIG. 1A is a perspective view
- FIG. 1B is a top view.
- a quadrangular frustum 102 is disposed on an optically transparent substrate 101, and the quadrangular frustum 102 is seen from a side surface 102a (invisible in the metal film 103 in FIG. 1) and 102b (in FIG. 1, hidden in the metal film 104). No), 102c, 102d and top surface 102e.
- quartz glass or the like is used for the substrate 101 ⁇ ⁇ .
- the side surface 102a and the side surface 102b are disposed to face each other, and the side surface 102c and the side surface 102d are also disposed to face each other.
- a metal film 103 is formed on the side surface 102a, and a metal film 104A is formed on the side surface 102b.
- the metal films 103 and 104 are metal films having a predetermined function (a magnetic material, a material having a light blocking function for light having a predetermined wavelength, or a material that generates plasmon when irradiated with light having a predetermined wavelength). In any case, a film thickness of several nanometers to several hundred nanometers is used.
- the metal film 103 and the metal film 104 form a so-called bow tie antenna.
- a metal film having the predetermined function may be formed on the side surfaces 102c and 102d, or a metal film having the predetermined function is formed between the metal films 103 and 104 and the side surfaces 102a and 102b. It may be a shape.
- the top surface 102e is rectangular, and the length of the side in contact with the side surface 102a and the side surface 102b is d1, and the length of the side in contact with the side surface 102c and the side surface 102d is g1.
- the metal film 103 and the metal film 104 on the side surface 102a and the side surface 102b have a sharpened shape near the top surface 102e, and the sharpness is represented by d1.
- the metal film 103 and the metal film 104 have a gap in the vicinity of the top surface 102e, and the size thereof is represented by g1. Both d1 and g1 have a value of several nm to several hundred nm.
- FIG. 2 is a cross-sectional view showing a method for manufacturing the quadrangular frustum 102 of the tip-type probe according to Embodiment 1 of the present invention.
- a cross section of AA ′ across the side surfaces 102a and 102b and the top surface 102e of FIG. 1 is shown on the left in FIG. 2, and a cross section of BB ′ across the side surfaces 102c and 102d and the top surface 102e is on the right of FIG. Show.
- step S ⁇ b> 201 an etching mask 201 is formed on the upper surface of the substrate 101.
- the etching mask 201 is a photoresist thin film processed by photolithography.
- the etching mask 201 is rectangular and the length of its two sides is g2. The length of the remaining two sides is d2.
- the substrate 101 is etched. Etching may be wet etching or dry etching, but is required to be isotropic etching. For example, when the substrate 101 is made of quartz glass, wet etching using a hydrofluoric acid solution may be used. By the etching of the substrate 101, a tip-shaped square pyramid 102 is formed under the etching mask 201.
- the ratio of d1 and g1 is equal to the ratio of the side lengths d2 and g2 of the etching mask 201.
- the timing for stopping isotropic etching is as follows. (1) When the time during which the isotropic etching is performed reaches an etching time determined with respect to the dimension of the top surface, the isotropic etching is stopped, or (2) the light transmitted through the etching mask For example, when the amount reaches a predetermined amount, isotropic etching is stopped.
- FIG. 3 and 4 show end views of a method of forming the metal films 103 and 104 on the side surfaces 102a and 102b of the quadrangular frustum 102.
- FIG. 3 and 4 show end views of a method of forming the metal films 103 and 104 on the side surfaces 102a and 102b of the quadrangular frustum 102.
- FIG. 3A is a cross-sectional view showing a method of forming the metal film 103 on the side surface 102a of the quadrangular frustum 102
- FIG. 3B is a side view in the direction of D303 in S303 of FIG. 3A. is there.
- FIG. 4A is a cross-sectional view showing a method of forming the metal film 104 on the side surface 102b of the quadrangular frustum 102
- FIG. 4B is a side view in the D403 direction in S403 of 43A. It is.
- a resin film having directivity such as a spray coating method is formed on the side surface 102b from the direction D301 perpendicular to the side surface 102b as in step S301.
- the sacrificial layer 301 is formed using a method. At this time, the sacrificial layer 301 is formed not only on the side surface 102b but also on the side surface 102c and the side surface 102d adjacent to the side surface 102b.
- the sacrificial layer 301 is not formed on the side surface 102a facing the side surface 102b because it is shaded by the directivity of the film formation method.
- the sacrificial layer 301 is made of a resin film such as a photoresist and has a film thickness of several tens of nm to several ⁇ m.
- the sacrificial layer 301 may be a metal film formed by a directional vacuum deposition method or the like.
- the metal film 302 is formed on the side surface 102a by using a film forming method capable of controlling directivity with respect to the substrate 101 such as a sputtering method. At this time, the metal film 302 is formed not only on the side surface 102a but also on the sacrificial layer 301 placed on the side surfaces 102c and 102d.
- the sacrificial layer 301 is lifted off using an organic solvent such as acetone. Further, the sacrificial layer 301 can be peeled off more easily by applying ultrasonic waves at that time. At this time, the metal film 302 placed on the sacrificial layer 301 is also peeled off, and the metal film 103 can be formed on the side surface 102a. In the case where the metal sacrificial layer 301 is used, the metal etchant can be lifted off using the metal etchant, so that the metal film 103 can be similarly formed on the side surface 102a.
- an organic solvent such as acetone
- a sacrificial layer 401 is formed on the metal film 103 from a direction D401 perpendicular to the side surface 102a by using a photoresist forming method having directivity such as a spray coating method. Form.
- the sacrificial layer 401 is formed not only on the metal film 103 but also on the side surface 102c and the side surface 102d.
- the sacrificial layer 401 is not formed on the side surface 102b facing the side surface 102a because it is shaded by the directivity of the film formation method.
- the sacrificial layer 401 is made of a photoresist and has a film thickness of several tens of nm to several ⁇ m.
- the sacrificial layer 401 may be a metal film formed by a directional vacuum deposition method or the like.
- the metal film 402 is formed on the side surface 102b by using a film forming method capable of controlling directivity with respect to the substrate 101 such as a sputtering method. At this time, the metal film 402 is formed not only on the side surface 102b but also on the sacrificial layer 401 placed on the side surface 102c and the side surface 102d.
- the sacrificial layer 401 is peeled off using an organic solvent such as acetone. Further, when the ultrasonic wave is applied at that time, the sacrificial layer 401 can be more easily peeled off. At this time, the metal film 402 placed on the sacrificial layer 401 is also peeled off, and the metal film 104 can be formed on the side surface 102b. In the case where the metal sacrificial layer 401 is used, the metal etchant can be lifted off using the metal etchant, and thus the metal film 104 can be formed over the side surface 102b in the same manner.
- an organic solvent such as acetone
- the etching mask 201 is removed.
- the bow-tie antenna-shaped metal films 103 and 104 are formed on the side surfaces 102a and 102b of the tip-shaped quadrangular frustum 102.
- an organic solvent such as acetone or fuming nitric acid is used.
- the top surface 102e of the quadrangular frustum 102 is exposed. As described above, the top surface 102e is rectangular, the length of one side is d1, and the length of the other orthogonal side is g1.
- the particles are caused to travel to the substrate 101 along the direction perpendicular to the substrate 101 from the side opposite to the side on which the substrate 101 is disposed of the etching mask 201, thereby improving the straightness of the particles.
- the metal film 103 or 104 can be made thinner sequentially by reducing the wraparound property of the film formation particles entering between the etching mask 201 and the side surface 102a or 102b.
- the directivity of the particles forming the metal films 103 and 104 with respect to the substrate 101 is lowered. In other words, the straightness of particles is weakened.
- the metal film 103 having substantially the same film thickness in the direction toward the top surface 102e of the frustum or 104 can be formed.
- the etching mask 201 By changing only the shape of the etching mask 201 in the processing method of the quadrangular frustum 102 described above, it is possible to form a triangular frustum, a polygonal frustum, or a frustum, and the metal films 103 and 104 are formed. Using a method similar to the processing method, it is possible to form a metal film on the side surface of the triangular frustum, the polygonal frustum, or the frustum.
- a square pyramid is used. Since the metal films 103 and 104 can be formed as they are after the stage 102 is processed, the etching mask placed on the top surface 102e at the time of forming the metal films 103 and 104 as in the prior art is re-applied. Since the number of processes in processing is reduced and the processing efficiency is improved, for example, the process of forming a resist pattern is eliminated, which is suitable for mass production and mass production.
- the metal films 302 and 402 are also formed on the top surface 102e, and the metal films 302 and 402 are removed by lift-off. However, the metal films 302 and 402 are not completely lifted off in the vicinity of the top surface 102e, and a residue remains. However, when the etching mask 201 is placed on the top surface 102e, the metal films 302 and 402 are not formed on the top surface 102e, so that the residue does not remain in the vicinity of the top surface 102e even after lift-off. . Therefore, it is not necessary to remove the residue using a method such as FIB (Focused Ion Beam) or polishing, and the processing efficiency is improved. Therefore, the method is suitable for mass production and mass production.
- FIB Fluorused Ion Beam
- the metal films 103 and 104 should be irradiated with a material having a light shielding function for light having a predetermined wavelength or light having a predetermined wavelength. Therefore, a material that generates plasmon can be used. Moreover, since the top surface 102e without adhesion of the residue is obtained, the S / N ratio is improved, so that the generation efficiency of near-field light generated on the top surface 102e is improved, and high efficiency and high resolution are achieved. It is possible to manufacture a near-field light generating element.
- the generation efficiency of near-field light can be improved, and the distance between the metal films 103 and 104 serving as magnetic poles can be accurately controlled.
- the generation efficiency can be improved.
- the distance (flying height) between the recording medium and the probe can be further reduced or controlled with high accuracy, and high-density magnetic recording becomes possible.
- the film thickness of the metal film is gradually reduced in the direction toward the top surface 102e of the frustum only by using a single film formation process. Therefore, the film thickness of the metal film in the vicinity of the top surface 102e can be easily reduced from several nanometers to several tens of nanometers without using an extremely advanced processing method such as FIB (Focused Ion Beam). Suitable for mass production and mass production. Further, since a strong and fine recording magnetic field spot can be generated in the vicinity of the top surface 102e, it is suitable as a probe for high-density magnetic recording.
- FIG. 6 is a cross-sectional view showing a method for manufacturing the quadrangular frustum 102 of the tip-type probe according to the second embodiment of the present invention.
- a cross-sectional view of AA ′ across the side surfaces 102a and 102b and the top surface 102e of FIG. 1 is shown on the left side of FIG. 6, and a cross-sectional view of BB ′ across the side surfaces 102c and 102d and the top surface 102e is on the right side of FIG. Show.
- the structure shown in steps S601 and S602 is processed using a method similar to the manufacturing method of the structure shown in S201 and S202 of FIG. 3 (method of performing isotropic etching using a hydrofluoric acid solution). Can do. Thereafter, by changing the concentration of the hydrofluoric acid solution and further proceeding with isotropic etching, new side surfaces 1002a, 1002b, 1002c, and 1002d with angles changed from the side surfaces 102a and 102b as shown in S603 are obtained. The square frustum 102 which has can be processed.
- the side surfaces 1002a, 1002b, 1002c, and 1002d are formed when the hydrofluoric acid solution having a different concentration penetrates from the contour 102f of the contact surface (top surface 102e) between the etching mask 201 and the substrate.
- the hydrofluoric acid solution may be a buffer hydrofluoric acid solution (BHF) mixed with ammonium fluoride or the like, and the hydrofluoric acid solution with the changed concentration is a solution of ammonium fluoride in the solution.
- BHF buffer hydrofluoric acid solution
- the side surfaces 1002a, 1002b, 1002c, and 1002d can be easily formed by using a solution with an increased mixing ratio.
- a tip-shaped square pyramid 102 having side surfaces with different angles is formed under the etching mask 201.
- FIG. 7 shows a cross-sectional view of a method of forming the metal films 103 and 104 on the side surfaces 102a, 1002a, 102b, and 1002b of the quadrangular frustum 102.
- FIG. 7A is a cross-sectional view showing a structure in which the metal film 103 is formed on the side surfaces 102a and 1002a of the quadrangular frustum 102.
- FIG. The metal film 103 in S701 uses a method similar to the film formation method used in S301 to S303 in FIG.
- the film formation particles flow not only on the side surface 102 a but also between the etching mask 201 and the side surface 1002 a, and the metal film 103 is also formed on the side surface 1002 a. It can be formed easily.
- the metal film 104 in S702 can be formed by the same method as the method for forming the metal film 103 in S701. At this time, since the wraparound property of the film-forming particles decreases between the etching mask 201 and the side surface 1002a or 1002b, the metal film on the side surface 1002a or 1002b is formed on the side surface 102a or 102b. It is very thin compared to the metal film thickness.
- the film thickness is directed to the top surface 102e of the frustum 102.
- the rate of change in film thickness can be further increased as compared with the metal films 103 and 104 shown in FIG.
- the film thickness d1 is several ⁇ m or more
- the film thickness d2 can be several tens of nm or less.
- the tip type probe shown in FIG. 7 (b) has the same function and effect as the tip type probe shown in FIGS. 5 (a) and 5 (b), and is more powerful.
- a fine recording magnetic field spot can be generated in the vicinity of the top surface 102e, it is suitable as a probe for high-density magnetic recording.
- FIG. 8 shows cross-sectional views of various structures of the tip-type probe according to Embodiment 3 of the present invention.
- the square frustum 102 and the metal films 103 and 104 shown in FIGS. 8A and 8B are manufactured by the same method as the manufacturing method of the square frustum 102 and the square frustum 102 shown in the first and second embodiments. be able to.
- the metal films 103 and 104 shown in FIGS. 8A and 8B have different film thicknesses. This is a method similar to the method of forming the metal film 103 or 104 shown in FIGS.
- the film thickness of the metal film 103 shown in FIGS. 8A and 8B is processed so as to gradually decrease in the direction toward the top surface 102e of the frustum 102. It becomes possible to do.
- the metal film 104 shown in FIGS. 8A and 8B lowers the directivity of particles to be formed with respect to the substrate 101, and the film formation particles that enter between the etching mask 201 and the side surfaces 102b and 1002b. By improving the wraparound property, the film can be formed to have substantially the same film thickness in the direction toward the top surface 102e of the frustum.
- the magnetic film 103 is used as a main magnetic pole, and the magnetic film 104 is used as a sub magnetic pole.
- the tip-type probe shown in the second embodiment it can be applied to high-density perpendicular magnetic recording.
- Embodiment 4 a fourth embodiment of the tip-type probe manufacturing method according to the present invention will be described with reference to FIG.
- the same components as those in the first to third embodiments are denoted by the same reference numerals, and the description thereof is omitted.
- FIG. 9 is a top view showing the top surface 102e of the tip-type probe and the side surface in the vicinity thereof in the fourth embodiment of the present invention.
- the square frustum 102 and all the metal films shown in FIGS. 9A and 9B are the same as the manufacturing method of the square frustum 102 and the metal films 103 and 104 shown in the first, second, and third embodiments. Can be manufactured.
- the metal films 105 and 106 are also formed on the side surfaces 102c and 102d of the frustum 102 in addition to the probe structure shown in S404 of FIG. 4 and FIG. 7B. can do.
- the method for forming the metal films 105 and 106 is the same as the method for forming the metal films 103 and 104 shown in FIGS.
- a predetermined target metal film is formed on the metal films 103 and 104 including the side surface 102c.
- lift-off is performed by a method similar to the method described in Embodiments 1, 2, and 3, so that the metal film 105 can remain only on the side surface 102c.
- the method for forming the metal film 106 is the same as the method for forming the metal film 105 described above.
- the probe structure shown in FIG. 9 has the same functions and effects as the probe structures shown in Embodiments 1, 2, and 3.
- the probe structure shown in FIG. Metal films are formed on all side surfaces.
- all metal films are made of a material having a light blocking function for light of a predetermined wavelength, or a material that generates plasmon when irradiated with light of a predetermined wavelength.
- the introduced light can be further condensed to generate high-efficiency near-field light and plasmons, and a high-efficiency near-field light generation probe can be realized.
- the metal films 103 and 104 as magnetic materials and the metal films 105 and 106 as materials having the above-described light shielding function or plasmon generating material, it can be applied as a probe for high-efficiency hybrid magnetic recording. become.
- the probe structure shown in FIG. 9B is characterized in that metal films 107 and 108 made of different materials are formed on the metal films 103 and 104 in addition to the structure shown in FIG. 9A.
- the formation method is the same as the method of forming the metal films 103 and 104.
- the metal films 103, 104, 105, and 106 can be made of the material having the light shielding function or the material for generating the plasmon, and the metal films 103 and 104 are made of the material having the light shielding function, A combination in which the metal films 105 and 106 are made of a material that generates the plasmon is also possible.
- FIG. 10 shows a cross-sectional view of the tip-type probe according to the fifth embodiment of the present invention.
- the tip type probe shown in FIG. 10 has a structure in which a plurality of square frustums 102 and 502 are processed on the same substrate 101.
- the method of processing the square frustums 102 and 502 is the same as the method of processing the square frustum 102 shown in FIG. 2 or FIG. 6, but the frustums 102 and 502 can be formed at the same time. It is also possible to form the platforms 102 and 502, respectively.
- the probe structure shown in FIG. 10 has the same functions and effects as the probe structures shown in the first to fourth embodiments.
- the metal film 103 of the probe made of the frustum 102 is made of a magnetic material
- the metal film 104 is made of the material having the light shielding function or the material generating the plasmon
- the metal films 503 and 504 of the probe made of the frustum 502 are formed.
- a magnetic material it can be applied as a probe for hybrid magnetic recording using the metal film 103 as a main magnetic pole and the metal films 503 and 504 as sub-magnetic poles.
- a high-efficiency near-field light generating probe is formed by forming a magnetic material, a material having a light shielding function, or a material that generates the plasmon in various combinations on the side surface of the frustum 102 or 502. Or as a probe for hybrid magnetic recording.
- the present invention is not limited to each embodiment. Specifically, the present invention may be a tip-type probe manufacturing apparatus using the tip-type probe manufacturing method described in each embodiment.
- the present invention may be applied to a tip-type probe manufacturing apparatus including the following constituent elements.
- the tip type probe manufacturing apparatus 600 includes a mask placement unit 601, a frustum formation unit 602, an isotropic etching control unit 603, and a metal film deposition unit 604.
- the mask placement unit 601 places an etching mask 201 having a shape similar to the top surface 102e on the substrate 101 (see FIG. 2).
- the frustum formation unit 602 forms the frustum 102 by isotropically etching the substrate 101 using the etching mask 201 (see FIG. 2).
- the isotropic etching control unit 603 instructs the frustum forming unit 602 to stop the isotropic etching when the area of the top surface 102e reaches an area where a near field can be generated (see FIG. 2). .
- the metal film forming unit 604 forms a metal film by causing film forming particles to pass between the etching mask 201 and the side surface 102e and adhere to the frustum 102 (see FIG. 3).
- the mask placement unit 601, the frustum formation unit 602, the isotropic etching control unit 603, and the metal film deposition unit 604 can execute the processes described in the above-described embodiments. Is already described, and will be omitted.
- Substrate 102 502 Square frustum 102a, 1002a, 102b, 1002b Side surface 102c, 102d, 502a, 502b Side surface 102e, 502e Top surface 103, 104, 105, 106, 107, 108 Metal film 302, 402, 302a, 302e Metal film 201 Etching masks 301 and 401 Sacrificial layer 600 Tip type probe manufacturing apparatus 601 Mask placement unit 602 Frustum formation unit 603 Isotropic etching control unit 604 Metal film deposition unit d1 and d2 Metal film thickness D301 For side surface 102b Perpendicular direction D303 Observation direction D401 of side surface 102a Direction D403 perpendicular to side surface 102a D403 Observation direction of side surface 102a
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Abstract
Description
以下、本発明に係るティップ型プローブ製造方法の第1実施形態を、図1から図5を参照して説明する。
まず、ステップS201に示すように、基板101の上面にエッチングマスク201を形成する。エッチングマスク201はフォトリソグラフィーで加工されたフォトレジスト薄膜である。エッチングマスク201は長方形であり、その2辺の長さはg2である。残りの2辺の長さはd2である。
ッチングを用いると良い。基板101のエッチングにより、エッチングマスク201の下にはティップ型の四角錐台102が形成される。
を示す断面図であり、図4(b)は43(a)のS403においてのD403方向の側面図である。
(実施の形態2)
次に、本発明に係るティップ型プローブ製造方法の第2実施形態を、図6と図7を参照して説明する。なお、この第2実施形態においては、第1実施形態における構成要素と同一の部分については、同一の符号を付しその説明を省略する。
ティップ型プローブが有している機能や効果と同一機能や効果をもつと共に、更に強力且つ微細な記録磁界スポットを頂面102eの近傍に発生させることができるので、高密度の磁気記録用のプローブとして適している。
(実施の形態3)
次に、本発明に係るティップ型プローブ製造方法の第3実施形態を、図8を参照して説明する。なお、この第3実施形態においては、第1と第2の実施形態における構成要素と同一の部分については、同一の符号を付しその説明を省略する。
(実施の形態4)
次に、本発明に係るティップ型プローブ製造方法の第4実施形態を、図9を参照して説明する。なお、この第3実施形態においては、第1から第3の実施形態における構成要素と同一の部分については、同一の符号を付しその説明を省略する。
(実施の形態5)
次に、本発明に係るティップ型プローブ製造方法の第5実施形態を、図10を参照して説明する。なお、この第5実施形態においては、第1から第4の実施形態における構成要素と同一の部分については、同一の符号を付しその説明を省略する。
102 502 四角錐台
102a、1002a、102b、1002b 側面
102c、102d、502a、502b 側面
102e、502e 頂面
103、104、105、106、107、108 金属膜
302、 402、302a、302e 金属膜
201 エッチングマスク
301、401 犠牲層
600 ティップ型プローブ製造装置
601 マスク配置部
602 錐台形成部
603 等方性エッチング制御部
604 金属膜成膜部
d1、d2 金属膜の膜厚
D301 側面102bに対して垂直な方向
D303 側面102aの観察方向
D401 側面102aに対して垂直な方向
D403 側面102aの観察方向
Claims (15)
- 頂面と側面からなる錐台の前記側面上に金属膜を有し、前記頂面から近接場を生成するティップ型プローブを製造するティップ型プローブ製造方法であって、
前記頂面と相似な形状のエッチングマスクを基板上に形成する工程と、
前記エッチングマスクを用いて前記基板を等方性エッチングすることにより前記錐台を形成する工程と、
前記頂面の面積が前記近接場を生成し得る面積に達した場合に、前記等方性エッチングを止める工程と、
前記エッチングマスクと前記側面との間に成膜粒子を回り込ませて前記錐台に付着させることにより前記金属膜を成膜する工程と
を含むティップ型プローブ製造方法。 - 前記錐台を形成する工程において、前記エッチングマスクと前記基板との接触面の輪郭から等方性エッチングが入る工程を含むことを特徴とする請求項1に記載のティップ型プローブ製造方法。
- 前記エッチングマスクと前記基板との接触面の輪郭から前記等方性エッチングが入ることで、前記錐台の前記頂面から前記錐台の根元に向かうにつれて、前記側面の前記頂面に対する角度が順次変化していることを特徴とする請求項2に記載のティップ型プローブ製造方法。
- 前記側面の内、少なくとも一部に犠牲層を形成する工程と、
前記犠牲層の少なくとも一部の上に前記金属膜が成膜されると同時に、前記金属膜の残りの部分が、前記側面の内、前記犠牲層が形成されていない部分の少なくとも一部の上に成膜される工程と、
前記犠牲層を除去するとともに、前記犠牲層上に付着した前記金属膜を除去する工程と、
を含むことを特徴とする請求項1に記載のティップ型プローブ製造方法。 - 前記金属膜を成膜する工程において、前記成膜粒子の前記基板に対する指向性を制御することで、前記金属膜の膜厚が前記錐台の根元から前記頂面に向かうにつれて、順次薄くなることを特徴とする請求項1に記載のティップ型プローブ製造方法。
- 前記金属膜を成膜する工程において、前記エッチングマスクの前記基板が配置されている側とは逆側から、前記基板に対する垂直方向に沿って前記成膜粒子を前記基板に進行させることにより、前記金属膜の膜厚が前記錐台の根元から前記頂面に向かうにつれて、順次薄くなることを特徴とする請求項5に記載のティップ型プローブ製造方法。
- 前記側面の少なくとも1側面の上に成膜される金属膜が、磁性材料からなることを特徴とする請求項1に記載のティップ型プローブ製造方法。
- 前記側面の少なくとも1側面の上に成膜される金属膜が、所定波長の光に対する遮光機能を有する材料からなることを特徴とする請求項1に記載のティップ型プローブ製造方法。
- 前記側面の少なくとも1側面の上に成膜される金属膜が、所定波長の光が照射されることにより、プラズモンを発生する材料からなることを特徴とする請求項1に記載のティップ型プローブ製造方法。
- 前記側面の少なくとも1側面の上に成膜される金属膜が、磁性材料からなり、残りの側面上において所定波長の光に対する遮光機能を有する材料、あるいは所定波長の光が照射されることによりプラズモンを発生する材料が成膜されることを特徴とする請求項1に記載のティップ型プローブ製造方法。
- 前記側面の少なくとも1側面の上に成膜される金属膜が、所定波長の光に対する遮光機能を有する材料、あるいは所定波長の光が照射されることによりプラズモンを発生する材料からなり、残りの側面上、前記遮光機能を有する材料、あるいは前記プラズモンを発生する材料上に磁性材料が成膜されることを特徴とする請求項1に記載のティップ型プローブ製造方法。
- 前記錐台を形成する工程と、前記金属膜を成膜する工程とを使用し、同一の前記基板上に複数個の前記ティップ型プローブを製造することを特徴とする請求項1に記載のティップ型プローブ製造方法。
- 請求項1乃至請求項12のいずれかに記載のティップ型プローブ製造方法によって製造されたティップ型プローブ。
- 請求項1乃至請求項12のいずれかに記載のティップ型プローブ製造方法を用いるティップ型プローブ製造装置。
- 頂面と側面からなる錐台の前記側面上に金属膜を有し、前記頂面から近接場を生成するティップ型プローブを製造するティップ型プローブ製造装置であって、
前記頂面と相似な形状のエッチングマスクを基板上に配置するマスク配置部と、
前記エッチングマスクを用いて前記基板を等方性エッチングすることにより前記錐台を形成する錐台形成部と、
前記頂面の面積が前記近接場を生成し得る面積に達した場合に、前記等方性エッチングを止めるように前記錐台形成部に指示を行う等方性エッチング制御部と、
前記エッチングマスクと前記側面との間に成膜粒子を回り込ませて前記錐台に付着させることにより前記金属膜を成膜する金属膜成膜部と
を含むティップ型プローブ製造装置。
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US12/735,789 US8568598B2 (en) | 2008-02-21 | 2009-02-18 | Tip type probe manufacturing method, tip type probe and tip type probe manufacturing apparatus |
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JP4052505B2 (ja) * | 2002-03-14 | 2008-02-27 | 学校法人東海大学 | 近接場半導体光プローブの製造方法 |
CN100395824C (zh) * | 2004-12-13 | 2008-06-18 | Tdk股份有限公司 | 磁记录介质的制造方法 |
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JP2001208672A (ja) * | 1999-11-16 | 2001-08-03 | Kanagawa Acad Of Sci & Technol | プローブ及びプローブの製造方法、プローブアレイ及びプローブアレイの製造方法 |
JP2002174587A (ja) * | 2000-09-29 | 2002-06-21 | Kanagawa Acad Of Sci & Technol | プローブ及びプローブアレイ |
JP2006329968A (ja) * | 2005-04-26 | 2006-12-07 | Seiko Instruments Inc | 近視野光発生素子の製造方法 |
JP2007212450A (ja) * | 2006-01-16 | 2007-08-23 | Seiko Instruments Inc | 近接場光発生素子の製造方法 |
WO2008015865A1 (fr) * | 2006-08-01 | 2008-02-07 | Seiko Instruments Inc. | Procédé et dispositif de fabrication d'une tête d'utilisation de la lumière proche d'un champ |
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