WO2009099277A3 - 고성능 낸드 플래시 메모리 셀 스트링 및 셀 소자 및 스위칭 소자 - Google Patents

고성능 낸드 플래시 메모리 셀 스트링 및 셀 소자 및 스위칭 소자 Download PDF

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Publication number
WO2009099277A3
WO2009099277A3 PCT/KR2009/000327 KR2009000327W WO2009099277A3 WO 2009099277 A3 WO2009099277 A3 WO 2009099277A3 KR 2009000327 W KR2009000327 W KR 2009000327W WO 2009099277 A3 WO2009099277 A3 WO 2009099277A3
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WO
WIPO (PCT)
Prior art keywords
flash memory
cell
memory cell
cell string
charge storage
Prior art date
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PCT/KR2009/000327
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English (en)
French (fr)
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WO2009099277A2 (ko
Inventor
이종호
Original Assignee
경북대학교 산학협력단
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Publication of WO2009099277A2 publication Critical patent/WO2009099277A2/ko
Publication of WO2009099277A3 publication Critical patent/WO2009099277A3/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

본 발명은 평탄 채널 플래시 메모리 셀 스트링, 셀 소자 및 스위칭 소자에 관한 것이다. 상기 플래시 메모리 셀 스트링은 다수 개의 셀 소자 및 상기 셀 소자의 끝단에 연결되는 스위칭 소자를 구비한다. 상기 셀 소자는 반도체 기판, 반도체 기판에 순차적으로 적층되는 투과 절연막, 전하 저장 노드, 컨트롤 절연막 및 제어 전극을 구비한다. 상기 전하저장노드는 도전성 물질로 이루어지며 "I"형 또는 "T"형의 구조로 형성된다. 전술한 구조를 갖는 전하저장노드는 상기 제어전극과의 커플링 비를 증가시키고 셀 사이의 cross-talk을 줄이게 된다. 본 발명에 의하여 NAND 플래시 메모리의 셀 소자의 축소화 특성과 성능을 개선하고, 필요시 제어 전극 및 전하 저장 노드로부터의 fringing 전계를 통해 채널의 반전층을 유기해서 셀과 셀 사이 또는 셀 string이 전기적으로 연결되도록 한다.
PCT/KR2009/000327 2008-02-04 2009-01-22 고성능 낸드 플래시 메모리 셀 스트링 및 셀 소자 및 스위칭 소자 WO2009099277A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0011345 2008-02-04
KR1020080011345A KR100941619B1 (ko) 2008-02-04 2008-02-04 고성능 낸드 플래시 메모리 셀 스트링 및 셀 소자 및스위칭 소자

Publications (2)

Publication Number Publication Date
WO2009099277A2 WO2009099277A2 (ko) 2009-08-13
WO2009099277A3 true WO2009099277A3 (ko) 2009-10-22

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KR (1) KR100941619B1 (ko)
WO (1) WO2009099277A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9293502B2 (en) * 2013-07-26 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor switching device separated by device isolation

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814854A (en) * 1996-09-09 1998-09-29 Liu; David K. Y. Highly scalable FLASH EEPROM cell
KR20040055172A (ko) * 2002-12-20 2004-06-26 삼성전자주식회사 플로팅 게이트를 갖는 비휘발성 기억 셀 및 그 형성방법
US20050145923A1 (en) * 2004-01-06 2005-07-07 Chiou-Feng Chen NAND flash memory with enhanced program and erase performance, and fabrication process
KR20060035551A (ko) * 2004-10-21 2006-04-26 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
KR20080009321A (ko) * 2005-06-08 2008-01-28 마이크론 테크놀로지, 인크. 확산 접합이 없는 비휘발성 메모리 셀

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100914684B1 (ko) * 2007-12-07 2009-08-28 경북대학교 산학협력단 플래시 메모리 셀 스트링, 셀 소자, 및 그 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814854A (en) * 1996-09-09 1998-09-29 Liu; David K. Y. Highly scalable FLASH EEPROM cell
KR20040055172A (ko) * 2002-12-20 2004-06-26 삼성전자주식회사 플로팅 게이트를 갖는 비휘발성 기억 셀 및 그 형성방법
US20050145923A1 (en) * 2004-01-06 2005-07-07 Chiou-Feng Chen NAND flash memory with enhanced program and erase performance, and fabrication process
KR20060035551A (ko) * 2004-10-21 2006-04-26 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
KR20080009321A (ko) * 2005-06-08 2008-01-28 마이크론 테크놀로지, 인크. 확산 접합이 없는 비휘발성 메모리 셀

Also Published As

Publication number Publication date
KR20090085446A (ko) 2009-08-07
WO2009099277A2 (ko) 2009-08-13
KR100941619B1 (ko) 2010-02-11

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