WO2009097737A1 - 一种化学机械抛光液 - Google Patents
一种化学机械抛光液 Download PDFInfo
- Publication number
- WO2009097737A1 WO2009097737A1 PCT/CN2009/000071 CN2009000071W WO2009097737A1 WO 2009097737 A1 WO2009097737 A1 WO 2009097737A1 CN 2009000071 W CN2009000071 W CN 2009000071W WO 2009097737 A1 WO2009097737 A1 WO 2009097737A1
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- WO
- WIPO (PCT)
- Prior art keywords
- polishing liquid
- liquid according
- acid
- polishing
- triazole
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 62
- 239000007788 liquid Substances 0.000 title claims abstract description 36
- 239000000126 substance Substances 0.000 title claims abstract description 13
- 229940123208 Biguanide Drugs 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- -1 biguanide compound Chemical class 0.000 claims description 16
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 10
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- XNCOSPRUTUOJCJ-UHFFFAOYSA-N Biguanide Chemical compound NC(N)=NC(N)=N XNCOSPRUTUOJCJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 5
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 4
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 claims description 3
- 150000003852 triazoles Chemical class 0.000 claims description 3
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 239000000174 gluconic acid Substances 0.000 claims description 2
- 235000012208 gluconic acid Nutrition 0.000 claims description 2
- 229960003105 metformin Drugs 0.000 claims description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-O morpholinium Chemical compound [H+].C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-O 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- ICFJFFQQTFMIBG-UHFFFAOYSA-N phenformin Chemical compound NC(=N)NC(=N)NCCC1=CC=CC=C1 ICFJFFQQTFMIBG-UHFFFAOYSA-N 0.000 claims description 2
- 229960003243 phenformin Drugs 0.000 claims description 2
- 150000003536 tetrazoles Chemical class 0.000 claims description 2
- MVRGLMCHDCMPKD-UHFFFAOYSA-N 3-amino-1h-1,2,4-triazole-5-carboxylic acid Chemical compound NC1=NNC(C(O)=O)=N1 MVRGLMCHDCMPKD-UHFFFAOYSA-N 0.000 claims 1
- 230000002195 synergetic effect Effects 0.000 abstract description 4
- 150000003851 azoles Chemical class 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 150000004283 biguanides Chemical class 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- 229920005591 polysilicon Polymers 0.000 description 16
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 239000003002 pH adjusting agent Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001519 homopolymer Polymers 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- KNRUQUSSDKZTSQ-UHFFFAOYSA-O 1h-tetrazol-1-ium-1-amine Chemical compound NN1C=[NH+]N=N1 KNRUQUSSDKZTSQ-UHFFFAOYSA-O 0.000 description 1
- XRIBIDPMFSLGFS-UHFFFAOYSA-N 2-(dimethylamino)-2-methylpropan-1-ol Chemical compound CN(C)C(C)(C)CO XRIBIDPMFSLGFS-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 150000004141 diterpene derivatives Chemical class 0.000 description 1
- 150000002169 ethanolamines Chemical class 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229960004329 metformin hydrochloride Drugs 0.000 description 1
- OETHQSJEHLVLGH-UHFFFAOYSA-N metformin hydrochloride Chemical compound Cl.CN(C)C(=N)N=C(N)N OETHQSJEHLVLGH-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 125000003831 tetrazolyl group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Definitions
- the present invention relates to a chemical mechanical polishing liquid in a semiconductor manufacturing process.
- CMP chemical mechanical polishing
- CMP Chemical mechanical polishing
- Its equipment usually consists of a polishing table with a polishing pad and a carrier for carrying the wafer.
- the polishing head holds the chip and then presses the front side of the chip against the polishing pad.
- the polishing head moves linearly on the polishing pad or in the same direction of motion as the polishing table.
- the slurry containing the abrasive is dropped onto the polishing pad and flattened on the polishing pad by centrifugation.
- the wafer surface is globally planarized by both mechanical and chemical effects.
- US2002032987 discloses a polishing liquid using an alcoholamine as an additive to increase the removal rate of polysilicon, wherein the additive is preferably 2-(dimethylamino)-2-methylpropanol.
- US2002151252 discloses a polishing fluid comprising a complexing agent having a plurality of carboxylic acid structures for increasing the rate of polysilicon removal, wherein the preferred complexing agents are EDTA (ethylenediaminetetraacetic acid) and DTPA (diethyltriamine). Pentaacetic acid).
- EDTA ethylenediaminetetraacetic acid
- DTPA diethyltriamine
- EP 1072662 discloses a polishing solution containing a lone pair of electrons and a double bond to produce a delocalized organic material to increase the removal rate of polysilicon.
- Preferred compounds are terpenoid compounds and salts thereof.
- US2006014390 discloses a polishing liquid for increasing the removal rate of polycrystalline silicon, which comprises from 4.25% to 18.5% by weight of abrasive and from 0.05% to 1.5% by weight of an additive.
- the additive is mainly selected from organic bases such as quaternary ammonium salts, quaternary ammonium bases and ethanolamines.
- the polishing liquid further contains a nonionic surfactant such as a homopolymer or copolymerization product of ethylene glycol or propylene glycol.
- the technical problem to be solved by the present invention is to provide a polishing liquid of the present invention which can significantly increase the removal rate of polycrystalline silicon containing abrasive particles and water, which also contain a biguanide compound and an azole compound.
- the biguanide compound is preferably selected from the group consisting of biguanide, metformin, phenformin, morpholinium, anthracene, fluorenyl-hexylbis[5-(p-chlorophenyl)biguanide] and acid addition salts of the above compounds One or more of Kind.
- the acid is preferably hydrochloric acid, phosphoric acid, nitric acid, acetic acid, gluconic acid or sulfonic acid.
- the content of the biguanide compound is preferably 0.01 to 7% by mass.
- the azole compound is preferably selected from one or more of triazole and tetrazole and derivatives thereof.
- the content of the azole compound is preferably 0.01 to 15% by mass.
- said abrasive particles preferably are selected from Si0 2, A1 2 0 3, Zr0 2, Ce0 2, Si :, Fe 2 0 3, Ti0 2 , and one or more of Si 3 N 4.
- the content of the abrasive particles is preferably 0.1 to 30% by mass.
- the particle diameter of the abrasive particles is preferably 20 to 150 nm, more preferably 30 to 120 nm.
- the polishing liquid of the present invention may further contain conventional additives such as pH adjusters and/or dispersing agents in the art.
- the pH adjusting agent may be selected from one or more of NaOH, KOH, ammonia and an organic base; the dispersing agent may be selected from the group consisting of polyvinyl alcohol, polyacrylic acid, polyacrylamide and polyethylene oxide. One or more of the above; the content of the dispersant is preferably 0.01% to 1% by mass.
- the pH of the polishing liquid of the present invention is preferably from 8 to 12.
- the above-mentioned components are simply mixed uniformly, adjusted to a suitable pH with a pH adjuster, and allowed to stand to prepare a polishing liquid of the present invention.
- the reagents and starting materials used in the present invention are commercially available.
- the positive progress of the present invention is that the diterpenoids and the azoles contained in the polishing liquid of the present invention have a synergistic effect and can significantly increase the removal rate of polycrystalline silicon. Summary of the invention
- Table 1 shows the polishing liquids 1 to 11 of the present invention, and according to the formula in the table, the components are simply mixed uniformly.
- the balance is water, adjusted to a suitable pH with a pH adjuster, and allowed to stand for 30 minutes to prepare each polishing liquid (the polishing liquid example of the present invention)
- Polishing solution (95 ⁇ 5nm) content wt pH removal rate ⁇ content wt % specific substance
- the removal rate of silicon tends to be saturated, with a maximum of around 2390 A/min. Continued increase of metformin hydrochloride content does not help to increase the removal rate of polysilicon.
- polishing liquids 1 to 5 of the present invention and the comparative polishing liquids 1, 5 to 7 it is revealed that the biguanide substance and the triazole have a remarkable synergistic effect, and the removal rate of polycrystalline silicon can be remarkably improved.
- polishing liquid 6 of the present invention From the polishing liquid 6 of the present invention and the comparative polishing liquid 8, it was revealed that there is a significant synergistic effect between the biguanide substance and the tetrazolium, and the removal rate of polycrystalline silicon can be remarkably improved.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
一种化学机械抛光液
技术领域
本发明涉及半导体制造工艺中的一种化学机械抛光液。 技术背景
随着半导体技术的不断发展， 以及大规模集成电路互连层的不断增加， 导电层和绝缘介质层的平坦化技术变得尤为关键。 由 IBM公司二十世纪 80 年代首创的化学机械研磨（CMP)技术被认为是目前全局平坦化的最有效的 方法。
化学机械研磨（CMP) 由化学作用和机械作用和两种作用结合而成。 它 的设备通常由一个带有抛光垫 （pad) 的研磨台 （polishing table), 及一个用 于承载芯片 （wafer) 的研磨头 (carrier)组成。 其中研磨头固定住芯片， 然后 将芯片的正面压在研磨垫上。当进行化学机械研磨时，研磨头在抛光垫（pad) 上线性移动或是沿着与研磨台一样的运动方向旋转。 与此同时， 含有研磨剂 的桨液 (slurry)被滴到抛光垫 （pad)上， 并因离心作用平铺在抛光垫 （pad) 上。 芯片 （wafer) 表面在机械和化学的双重作用下实现全局平坦化。
根据化学机械抛光所要解决的具体问题的不同，对多晶硅（Poly silicon) 的去除速率 （removal rate) 有两种不同的要求。
一种要求是要降低多晶硅的去除速率， 如： US 20050130428 报道了一 种含环氧乙烷或环氧丙烷的均聚或共聚物的抛光液， 以抑制多晶硅去除速 率。 聚合物的疏水性基团被认为是吸附在多晶硅表面上， 形成了钝化层， 从 而降低了多晶硅的去除速率。
另一类是提高多晶硅的去除速率：
US2002032987 公开了一种用醇胺作为添加剂的抛光液， 以提高多晶硅 (Poly silicon) 的去除速率 （ removal rate )， 其中添加剂优选 2- (二甲氨基） •2-甲基小丙醇。
US2002151252 公开了一种含具有多个羧酸结构的络合剂的抛光液， 用 于提高多晶硅去除速率， 其中优选的络合剂是 EDTA (乙二胺四乙酸） 和 DTPA (二乙基三胺五乙酸）。
EP 1072662 公开了一种含孤对电子和双键产生离域结构的有机物的抛 光液， 以提高多晶硅（Poly silicon)的去除速率（removal rate), 优选化合物 是胍类的化合物及其盐。
US2006014390 公开了一种用于提高多晶硅的去除速率的抛光液， 其包 含重量百分比为 4.25%〜18.5%研磨剂和重量百分比为 0.05%〜1.5%的添加 剂。 其中添加剂主要选自季铵盐、 季胺碱和乙醇胺等有机碱。 此外， 该抛光 液还包含非离子型表面活性剂， 例如乙二醇或丙二醇的均聚或共聚产物。 发明概要
本发明所要解决的技术问题是提供一种可显著提高多晶硅去除速率的 本发明的抛光液含有研磨颗粒和水，其还同时含有双胍类化合物和氮唑 类化合物。
其中， 所述的双胍类化合物较佳的选自双胍、 二甲双胍、 苯乙双胍、 吗 啉胍、 Ι,Γ-己基双 [5- (对氯苯基)双胍]及上述化合物的酸加成盐中的一种或多
种。 所述的酸较佳的为盐酸、 磷酸、 硝酸、 醋酸、 葡萄糖酸或磺酸。 所述的 双胍类化合物的含量较佳的为质量百分比 0.01〜7%。
其中，所述的氮唑类化合物较佳的选自三氮唑和四氮唑及其衍生物中的 一种或多种。 所述的氮唑类化合物的含量较佳的为质量百分比 0.01〜15%。
其中，所述的研磨颗粒较佳的选自 Si02、 A1203、 Zr02、 Ce02、 Si：、 Fe203、 Ti02和 Si3N4中的一种或多种。 所述的研磨颗粒的含量较佳的为质量百分比 0.1~30%o所述的研磨颗粒的粒径较佳的为 20~150nm，更佳的为 30~120nm。
本发明的抛光液还可含有本领域常规添加剂，如 pH调节剂和 /或分散剂。 所述的 pH调节剂可选自 NaOH、 KOH、 氨和有机碱中的一种或多种； 所述 的分散剂可选自聚乙烯醇、 聚丙烯酸、 聚丙烯酰胺和聚环氧乙烷中的一种或 多种； 所述的分散剂的含量较佳的为质量百分比 0.01%〜 1%。
本发明的抛光液的 pH范围较佳的为 8~12。
将上述成分简单混和均匀， 用 pH调节剂调节至合适 pH值， 静置即可 制得本发明的抛光液。 本发明所用试剂及原料均市售可得。
本发明的积极进步效果在于：本发明的抛光液中同时含有的双胍类物质 和氮唑类物质具有协同作用， 可显著提高多晶硅的去除速率。 发明内容
下面通过实施例的方式进一步说明本发明，但并不因此将本发明限制在 所述的实施例范围之中。
实施例 1〜11
表 1给出了本发明的抛光液 1〜11，按表中配方，将各成分简单混和均匀，
余量为水，用 pH调节剂调节至合适 pH值，静置 30分钟即可制得各抛光液( 本发明的抛光液实施例
1， r - 己基双
[5 -（对氯 5-羧基 -3-氨基 1,2,4-
10 Si3N4(80nm) 1 5 3 10 苯基） 双 三氮唑
胍]膦酸
±卜
1， Γ - 己基双
[5- (对氯
11 Si3N4(80nm) 1 4 3-氨基 -1,2,4-三氮唑 9 苯基） 双
胍]磺酸
盐
效果实施例
表 2给出了对比抛光例 8以及本发明的抛光液 1〜6， 按表中配方， 将各 成分简单混和均匀， 余量为水， 用四甲基氢氧化铵调节至 pH=l l， 静置 30 分钟即可制得各抛光液。 将各抛光液用于多晶硅抛光。 抛光条件为： 抛光机 台为 Logitech (英国） 1PM52型， 12英寸 politex抛光垫（pad)， 4cm*4cm 正方形 Wafer, 研磨压力 3 psi， 研磨台 （polishing table) 转速 70转 /分钟， 研磨头 (carrier)自转转速 150转 /分钟， 抛光液滴加速度 100 ml / min。 抛光结 果见表 2。 对比抛光例 8以及本发明的抛光液 1〜6配方及多晶硅去除速率 二氧化硅 氮唑类化合物 多晶硅去 盐酸二甲双
抛光液 (95±5nm) 含量 wt pH 除速率 胍含量 wt % 具体物质
wt% % (A/min) 对比 1 1 \ \ \ 11 1324
对比 2 1 0.1 \ \ 1 1 2032 对比 3 1 0.5 \ \ 1 1 2380 对比 4 1 1 .0 \ \ 1 1 2390 对比 5 1 \ 1,2,4-三氮唑 0.1 1 1 1843 对比 6 1 \ 1,2,4-三氮唑 0.5 1 1 2163 对比 7 1 \ 1，2,4-三氮唑 1.0 1 1 2160
1 1 0.1 1,2,4-三氮唑 0.5 1 1 3093
2 1 0.1 1,2,4-三氮唑 1 1 1 4400
3 1 0.5 1,2,4-三氮唑 1 4311
3-氨基 -1,2,4-三氮
4 0.1 1 4002 唑
5-羧基 -3-氨基
5 0.1 1 3897
1,2,4-三氮唑
对比 8 1 \ 5-氨基四氮唑 1 2059
6 0.5 5-
1 氨基四氮唑 1 4100
1 1
硅的去除速率趋向饱和， 最大值在 2390A/min左右。 继续增加盐酸二甲双 胍含量， 对提高多晶硅的去除速率没有帮助。
由对比抛光液 5， 6， 7表明： 随着 1,2，4-三氮唑 （TAZ) 含量的不断提 高，多晶硅的去除速率趋向饱和，最大值在 2163 A/min 左右。继续增加 TAZ 的含量， 对提高多晶硅的去除速率没有帮助。
由本发明的抛光液 1~5与对比抛光液 1、 5〜7表明： 双胍类物质和三氮 唑存在着明显的协同作用， 可以显著地提高多晶硅的去除速率。
由本发明的抛光液 6和对比抛光液 8表明：双胍类物质和四氮唑存在着 明显的协同作用， 可以显著地提高多晶硅的去除速率。
Claims
1. 一种化学机械抛光液， 其含有研磨颗粒和水， 其特征在于： 其还同时含 有双胍类化合物和氮唑类化合物。
2. 如权利要求 1所述的抛光液， 其特征在于： 所述的双胍类化合物选自双 胍、 二甲双胍、 苯乙双胍、 吗啉胍、 1,1，-己基双 [5- (对氯苯基)双胍]及上 述化合物的酸加成盐中的一种或多种。
3. 如权利要求 2所述的抛光液， 其特征在于： 所述的酸为盐酸、 磷酸、 硝 酸、 醋酸、 葡萄糖酸或磺酸。
4. 如权利要求 1 所述的抛光液， 其特征在于： 所述的双胍类化合物的含量 为质量百分比 0.01〜7%。
5. 如权利要求 1 所述的抛光液， 其特征在于： 所述的氮唑类化合物为三氮 唑和四氮唑及其衍生物中的一种或多种。
6. 如权利要求 5所述的抛光液， 其特征在于： 所述的氮唑类化合物为 1,2,4- 三氮唑、 3-氨基 -1,2,4-三氮唑、 5-羧基 -3-氨基 1,2,4-三氮唑和 5-氨基四氮 唑中的一种或多种。
7. 如权利要求 1 所述的抛光液， 其特征在于： 所述的氮唑类化合物的含量 为质量百分比 0.01〜15%。
8. 如权利要求 1所述的抛光液， 其特征在于： 所述的研磨颗粒选自 Si02、 A1203、 Zr02、 Ce02、 SiC、 Fe203、 Ti02和 Si3N4中的一种或多种。
9. 如权利要求 1 所述的抛光液， 其特征在于： 所述的研磨颗粒的含量为质 量百分比 0.1〜30%。
10.如权利要求 1 所述的抛光液， 其特征在于： 所述的研磨颗粒的粒径为
30〜120nm。
11.如权利要求 1所述的抛光液， 其特征在于： 所述的抛光液的 pH范围为
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| CN102533119A (zh) * | 2010-12-21 | 2012-07-04 | 安集微电子（上海）有限公司 | 一种含氮胺类化合物的化学机械抛光液 |
| JPWO2013077281A1 (ja) * | 2011-11-25 | 2015-04-27 | 株式会社フジミインコーポレーテッド | 合金材料の研磨方法及び合金材料の製造方法 |
| CN104371550B (zh) * | 2013-08-14 | 2018-02-09 | 安集微电子（上海）有限公司 | 一种用于抛光硅材料的化学机械抛光液 |
| CN104371553B (zh) * | 2013-08-14 | 2017-10-13 | 安集微电子（上海）有限公司 | 一种化学机械抛光液以及应用 |
| CN104371552B (zh) * | 2013-08-14 | 2017-09-15 | 安集微电子（上海）有限公司 | 含硅有机化合物在延长化学机械抛光液中研磨颗粒稳定性中的应用 |
| CN111378973A (zh) * | 2018-12-28 | 2020-07-07 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液及其应用 |
| CN111378372B (zh) * | 2018-12-28 | 2022-05-13 | 安集微电子（上海）有限公司 | 一种乙酸在sti抛光中的用途 |
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