WO2009079986A3 - Oberflächenemittierender halbleiterlaser und verfahren zu dessen herstellung - Google Patents

Oberflächenemittierender halbleiterlaser und verfahren zu dessen herstellung Download PDF

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Publication number
WO2009079986A3
WO2009079986A3 PCT/DE2008/002068 DE2008002068W WO2009079986A3 WO 2009079986 A3 WO2009079986 A3 WO 2009079986A3 DE 2008002068 W DE2008002068 W DE 2008002068W WO 2009079986 A3 WO2009079986 A3 WO 2009079986A3
Authority
WO
WIPO (PCT)
Prior art keywords
producing
semiconductor laser
emitting semiconductor
emitting
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2008/002068
Other languages
English (en)
French (fr)
Other versions
WO2009079986A2 (de
Inventor
Stefan Illek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to EP08865054.4A priority Critical patent/EP2227844B1/de
Priority to US12/808,979 priority patent/US8325778B2/en
Priority to JP2010538329A priority patent/JP2011507286A/ja
Publication of WO2009079986A2 publication Critical patent/WO2009079986A2/de
Publication of WO2009079986A3 publication Critical patent/WO2009079986A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Es wird ein oberflächenemittierender Halbleiterlaser angegeben, der eine erste Halbleiterschichtenfolge (20) aufweist, die einen Pumplaser (7) umfasst, und der eine auf der ersten Halbleiterschichtenfolge (20) angeordnete zweite Halbleiterschichtenfolge (3) aufweist, die einen Vertikalemitter (1) umfasst. Der Vertikalemitter (1) weist eine strahlungsemittierende aktive Schicht (4), eine Strahlungsaustrittsseite (5) und eine der Strahlungsaustrittsseite (5) gegenüberliegende Befestigungsseite (6) auf, wobei der Pumplaser (7) an der Strahlungsaustrittsseite (5) des Vertikalemitters (1) angeordnet ist und an der Befestigungsseite (6) des Vertikalemitters (1) ein Trägerkörper (2) angeordnet ist. Ferner wird ein Verfahren zur Herstellung eines oberflächenemittierenden Halbleiterlasers angegeben.
PCT/DE2008/002068 2007-12-21 2008-12-10 Oberflächenemittierender halbleiterlaser und verfahren zu dessen herstellung Ceased WO2009079986A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08865054.4A EP2227844B1 (de) 2007-12-21 2008-12-10 Oberflächenemittierender halbleiterlaser und verfahren zu dessen herstellung
US12/808,979 US8325778B2 (en) 2007-12-21 2008-12-10 Surface emitting semiconductor laser and method for producing it
JP2010538329A JP2011507286A (ja) 2007-12-21 2008-12-10 面発光半導体レーザおよびその製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007062128.2 2007-12-21
DE102007062128 2007-12-21
DE102008008595.2 2008-02-12
DE102008008595A DE102008008595A1 (de) 2007-12-21 2008-02-12 Oberflächenemittierender Halbleiterlaser und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
WO2009079986A2 WO2009079986A2 (de) 2009-07-02
WO2009079986A3 true WO2009079986A3 (de) 2009-09-11

Family

ID=40690031

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/002068 Ceased WO2009079986A2 (de) 2007-12-21 2008-12-10 Oberflächenemittierender halbleiterlaser und verfahren zu dessen herstellung

Country Status (6)

Country Link
US (1) US8325778B2 (de)
EP (1) EP2227844B1 (de)
JP (1) JP2011507286A (de)
KR (1) KR101602971B1 (de)
DE (1) DE102008008595A1 (de)
WO (1) WO2009079986A2 (de)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998031080A1 (en) * 1997-01-08 1998-07-16 W.L. Gore & Associates, Inc. Vcsel-based multi-wavelength transmitter and receiver modules for serial and parallel optical links
US5796771A (en) * 1996-08-19 1998-08-18 The Regents Of The University Of California Miniature self-pumped monolithically integrated solid state laser
US20070217463A1 (en) * 2003-11-13 2007-09-20 Osram Opto Semiconductors Gmbh Vcsel Pumped In A Monolithically Optical Manner And Comprising A Laterally Applied Edge Emitter
DE102006024220A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335383A (ja) * 1997-05-28 1998-12-18 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
KR100303831B1 (ko) * 1998-12-10 2001-11-02 김순택 광펌프레이저밸브및광펌프레이저장치
US6371636B1 (en) 1999-05-24 2002-04-16 Jam Strait, Inc. LED light module for vehicles
DE10108079A1 (de) 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
DE10040448A1 (de) 2000-08-18 2002-03-07 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zu dessen Herstellung
JP2002353561A (ja) * 2001-05-23 2002-12-06 Canon Inc 面発光レーザ装置およびその製造方法
DE10147888A1 (de) * 2001-09-28 2003-04-24 Osram Opto Semiconductors Gmbh Optisch gepumpter vertikal emittierender Halbleiterlaser
DE10303978A1 (de) * 2002-01-31 2003-11-27 Osram Opto Semiconductors Gmbh Dünnfilmhalbleiterbauelement und Verfahren zu dessen Herstellung
JP2003332676A (ja) * 2002-05-08 2003-11-21 Mitsubishi Electric Corp 半導体光装置
DE10243545B4 (de) 2002-09-19 2008-05-21 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiterlaservorrichtung
DE10248768B4 (de) * 2002-10-18 2007-04-26 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben
JP4904150B2 (ja) 2003-01-31 2012-03-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光素子の製造方法
KR101186927B1 (ko) 2003-11-13 2012-09-28 오스람 옵토 세미컨덕터스 게엠베하 광 펌핑 반도체 레이저 장치
DE112008001071A5 (de) 2007-02-19 2010-01-21 Osram Opto Semiconductors Gmbh LED-Modul
DE102008014121A1 (de) 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Halbleiterchip
DE102008017268A1 (de) 2008-03-03 2009-09-10 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaser mit monolithisch integriertem Pumplaser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796771A (en) * 1996-08-19 1998-08-18 The Regents Of The University Of California Miniature self-pumped monolithically integrated solid state laser
WO1998031080A1 (en) * 1997-01-08 1998-07-16 W.L. Gore & Associates, Inc. Vcsel-based multi-wavelength transmitter and receiver modules for serial and parallel optical links
US20070217463A1 (en) * 2003-11-13 2007-09-20 Osram Opto Semiconductors Gmbh Vcsel Pumped In A Monolithically Optical Manner And Comprising A Laterally Applied Edge Emitter
DE102006024220A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement

Also Published As

Publication number Publication date
KR101602971B1 (ko) 2016-03-11
US8325778B2 (en) 2012-12-04
DE102008008595A1 (de) 2009-06-25
EP2227844B1 (de) 2014-03-12
WO2009079986A2 (de) 2009-07-02
US20100309944A1 (en) 2010-12-09
JP2011507286A (ja) 2011-03-03
KR20100098569A (ko) 2010-09-07
EP2227844A2 (de) 2010-09-15

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