WO2009064020A1 - Dispositif électroluminescent - Google Patents
Dispositif électroluminescent Download PDFInfo
- Publication number
- WO2009064020A1 WO2009064020A1 PCT/JP2008/071060 JP2008071060W WO2009064020A1 WO 2009064020 A1 WO2009064020 A1 WO 2009064020A1 JP 2008071060 W JP2008071060 W JP 2008071060W WO 2009064020 A1 WO2009064020 A1 WO 2009064020A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- periodic structure
- electrode
- emission layer
- reflection surface
- Prior art date
Links
- 230000000737 periodic effect Effects 0.000 claims abstract description 143
- 238000000605 extraction Methods 0.000 claims abstract description 44
- 238000001228 spectrum Methods 0.000 claims description 6
- 230000010363 phase shift Effects 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 112
- 239000000758 substrate Substances 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 239000012044 organic layer Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 239000013598 vector Substances 0.000 description 12
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000004038 photonic crystal Substances 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 9
- 230000006872 improvement Effects 0.000 description 8
- 238000013519 translation Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 7
- 229910001316 Ag alloy Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 5
- 239000002096 quantum dot Substances 0.000 description 5
- 238000010549 co-Evaporation Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004286 SiNxOy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003230 hygroscopic agent Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
Abstract
Afin d'améliorer le rendement de l'extraction lumineuse d'un dispositif électroluminescent, ce dispositif électroluminescent comprend: une première électrode; une seconde électrode placée sur un côté d'extraction lumineuse; une couche d'émission formée entre la première électrode et la seconde électrode, une surface réfléchissante placée sur la première électrode par rapport à la couche d'émission; et une structure périodique sur un noeud d'interférence généré par la lumière émise par la couche d'émission et la lumière émise par la couche d'émission vers le côté de la surface réfléchissante et réfléchie sur la surface réfléchissante. La structure périodique permet de diffracter la lumière générée dans la couche d'émission et guidée dans une direction en plan du dispositif électroluminescent en direction de la seconde électrode, la structure périodique permet également d'extraire la lumière vers l'extérieur du dispositif électroluminescent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/674,240 US8232572B2 (en) | 2007-11-14 | 2008-11-13 | Light emitting device |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-295591 | 2007-11-14 | ||
| JP2007295974 | 2007-11-14 | ||
| JP2007-295974 | 2007-11-14 | ||
| JP2007295591 | 2007-11-14 | ||
| JP2007328709A JP5219493B2 (ja) | 2007-11-14 | 2007-12-20 | 発光素子及びそれを用いた発光装置 |
| JP2007-328709 | 2007-12-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2009064020A1 true WO2009064020A1 (fr) | 2009-05-22 |
Family
ID=40638860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2008/071060 WO2009064020A1 (fr) | 2007-11-14 | 2008-11-13 | Dispositif électroluminescent |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2009064020A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014084159A1 (fr) * | 2012-11-27 | 2014-06-05 | 昭和電工株式会社 | Élément électroluminescent organique et son procédé de fabrication |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11283751A (ja) * | 1998-03-27 | 1999-10-15 | Nec Corp | 有機エレクトロルミネッセンス素子 |
| JPH11307266A (ja) * | 1998-04-23 | 1999-11-05 | Matsushita Electric Ind Co Ltd | 有機発光素子 |
| JP2004014529A (ja) * | 1999-12-08 | 2004-01-15 | Nec Corp | 有機ｅｌ素子 |
| JP2006100430A (ja) * | 2004-09-28 | 2006-04-13 | Toshiba Matsushita Display Technology Co Ltd | 有機ｅｌ表示装置 |
-
2008
- 2008-11-13 WO PCT/JP2008/071060 patent/WO2009064020A1/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11283751A (ja) * | 1998-03-27 | 1999-10-15 | Nec Corp | 有機エレクトロルミネッセンス素子 |
| JPH11307266A (ja) * | 1998-04-23 | 1999-11-05 | Matsushita Electric Ind Co Ltd | 有機発光素子 |
| JP2004014529A (ja) * | 1999-12-08 | 2004-01-15 | Nec Corp | 有機ｅｌ素子 |
| JP2006100430A (ja) * | 2004-09-28 | 2006-04-13 | Toshiba Matsushita Display Technology Co Ltd | 有機ｅｌ表示装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014084159A1 (fr) * | 2012-11-27 | 2014-06-05 | 昭和電工株式会社 | Élément électroluminescent organique et son procédé de fabrication |
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