WO2009060756A1 - プラズマ処理装置及び外気遮断容器 - Google Patents

プラズマ処理装置及び外気遮断容器 Download PDF

Info

Publication number
WO2009060756A1
WO2009060756A1 PCT/JP2008/069517 JP2008069517W WO2009060756A1 WO 2009060756 A1 WO2009060756 A1 WO 2009060756A1 JP 2008069517 W JP2008069517 W JP 2008069517W WO 2009060756 A1 WO2009060756 A1 WO 2009060756A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas flow
gap
treatment apparatus
plasma treatment
external air
Prior art date
Application number
PCT/JP2008/069517
Other languages
English (en)
French (fr)
Inventor
Tadahiro Ohmi
Takaaki Matsuoka
Original Assignee
Tohoku University
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007288022A external-priority patent/JP2011040417A/ja
Priority claimed from JP2007288021A external-priority patent/JP2011040416A/ja
Application filed by Tohoku University, Tokyo Electron Limited filed Critical Tohoku University
Publication of WO2009060756A1 publication Critical patent/WO2009060756A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Furnace Details (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

　処理容器の容器突出部と蓋体の蓋体突出部との接触面には、シール材が環状に二重に設けられている。容器突出部には、シール材の間に形成された隙間に、不活性ガスを流入させるためのガス流入口と、その不活性ガスを隙間から流出させるためのガス流出口が形成されている。ガス流入口とガス流出口は、対向して形成されている。ガス流入口から流入した不活性ガスは流出口に向かって流れ、隙間内に充満する。この隙間内に充満した不活性ガスの層によって、処理容器内の気密性が保持される。
PCT/JP2008/069517 2007-11-06 2008-10-28 プラズマ処理装置及び外気遮断容器 WO2009060756A1 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007288022A JP2011040417A (ja) 2007-11-06 2007-11-06 プラズマ処理装置及び外気遮断容器
JP2007288021A JP2011040416A (ja) 2007-11-06 2007-11-06 プラズマ処理装置及び外気遮断容器
JP2007-288021 2007-11-06
JP2007-288022 2007-11-06

Publications (1)

Publication Number Publication Date
WO2009060756A1 true WO2009060756A1 (ja) 2009-05-14

Family

ID=40625650

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069517 WO2009060756A1 (ja) 2007-11-06 2008-10-28 プラズマ処理装置及び外気遮断容器

Country Status (2)

Country Link
TW (1) TW200943453A (ja)
WO (1) WO2009060756A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101881335A (zh) * 2010-03-23 2010-11-10 东莞宏威数码机械有限公司 多层橡胶密封圈密封装置
EP2292954A1 (en) * 2009-09-07 2011-03-09 FEI Company High-vacuum seal
JP2011256946A (ja) * 2010-06-09 2011-12-22 Tohoku Univ 減圧処理装置
WO2012059203A1 (de) * 2010-11-02 2012-05-10 Hq-Dielectrics Gmbh Vorrichtung zum behandeln von substraten
WO2013188202A1 (en) * 2012-06-13 2013-12-19 Qualcomm Mems Technologies, Inc. Ald apparatus with o-ring protected by purge gas
JP2014114849A (ja) * 2012-12-07 2014-06-26 Ihi Corp ２重シール部のシール機構
JP2017219197A (ja) * 2016-06-09 2017-12-14 ヤネスコ・オサケユキテュアＪａｎｅｓｋｏ Ｏｙ 計測装置のシール構成およびシール方法
CN114597108A (zh) * 2020-12-04 2022-06-07 中国科学院微电子研究所 一种半导体制造设备及其处理腔、气体发生装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01312074A (ja) * 1988-06-10 1989-12-15 Fujitsu Ltd 半導体処理室のロードロック装置
JP2000106298A (ja) * 1998-09-28 2000-04-11 Tokyo Electron Ltd プラズマ処理装置
JP2001015440A (ja) * 1999-06-28 2001-01-19 Hitachi Kokusai Electric Inc 半導体製造方法及び装置
JP2003003263A (ja) * 2001-06-20 2003-01-08 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置
JP2004319871A (ja) * 2003-04-18 2004-11-11 Advanced Lcd Technologies Development Center Co Ltd 処理装置、処理方法およびプラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01312074A (ja) * 1988-06-10 1989-12-15 Fujitsu Ltd 半導体処理室のロードロック装置
JP2000106298A (ja) * 1998-09-28 2000-04-11 Tokyo Electron Ltd プラズマ処理装置
JP2001015440A (ja) * 1999-06-28 2001-01-19 Hitachi Kokusai Electric Inc 半導体製造方法及び装置
JP2003003263A (ja) * 2001-06-20 2003-01-08 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置
JP2004319871A (ja) * 2003-04-18 2004-11-11 Advanced Lcd Technologies Development Center Co Ltd 処理装置、処理方法およびプラズマ処理装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2292954A1 (en) * 2009-09-07 2011-03-09 FEI Company High-vacuum seal
JP2011058626A (ja) * 2009-09-07 2011-03-24 Fei Co 高真空シール
CN101881335A (zh) * 2010-03-23 2010-11-10 东莞宏威数码机械有限公司 多层橡胶密封圈密封装置
JP2011256946A (ja) * 2010-06-09 2011-12-22 Tohoku Univ 減圧処理装置
WO2012059203A1 (de) * 2010-11-02 2012-05-10 Hq-Dielectrics Gmbh Vorrichtung zum behandeln von substraten
KR20130126628A (ko) * 2010-11-02 2013-11-20 에이치큐-디일렉트릭스 게엠베하 기판 처리 장치
KR101894437B1 (ko) * 2010-11-02 2018-09-05 에이치큐-디일렉트릭스 게엠베하 기판 처리 장치
WO2013188202A1 (en) * 2012-06-13 2013-12-19 Qualcomm Mems Technologies, Inc. Ald apparatus with o-ring protected by purge gas
JP2014114849A (ja) * 2012-12-07 2014-06-26 Ihi Corp ２重シール部のシール機構
JP2017219197A (ja) * 2016-06-09 2017-12-14 ヤネスコ・オサケユキテュアＪａｎｅｓｋｏ Ｏｙ 計測装置のシール構成およびシール方法
CN114597108A (zh) * 2020-12-04 2022-06-07 中国科学院微电子研究所 一种半导体制造设备及其处理腔、气体发生装置

Also Published As

Publication number Publication date
TW200943453A (en) 2009-10-16

Similar Documents

Publication Publication Date Title
WO2009060756A1 (ja) プラズマ処理装置及び外気遮断容器
WO2012056341A3 (en) Closed chamber for wafer wet processing
EP2123560A4 (en) METHOD FOR PACKAGING A LIQUID FILLING IN A BAG OF MOUTHPIECE AND CLOSING THE BAG AND DEVICE THEREFOR
WO2012015931A3 (en) Apparatus for controlling the flow of a gas in a process chamber
EA201290093A1 (ru) Способ и устройство для изготовления изделий из титана
MX2008007998A (en) A process for the preparation of a chemical derivable from an olefin oxide, and a reactor suitable for such a process
SG130188A1 (en) Method and vessel for the delivery of precursor materials
TW200733792A (en) Desiccant sealing arrangement for OLED devices
MX345867B (es) Inhalador para sustancias en forma de polvo.
TNSN08350A1 (en) Capsule with outer sealing material pressurized by a fluid
WO2009085992A3 (en) Thermal reactor with improved gas flow distribution
NZ588984A (en) An air separator with a flow diverting baffle that changes the direction of fluid flow at least twice
WO2011059313A8 (en) Container for dispensing a substance
WO2007084558A3 (en) Method of producing particles by physical vapor deposition in an ionic liquid
HK1150161A1 (en) Method and device for receiving and handing over fine-grain to coarse-grain solids from a container to a higher pressure system
WO2008125917A3 (en) System and method for packaging
WO2011059891A3 (en) Chamber with uniform flow and plasma distribution
WO2010138629A3 (en) Pressurized plasma enhanced reactor
WO2011137901A3 (en) A dispensing device for dispensing a powdered or granular product
JP2013534984A5 (ja)
WO2009015716A3 (de) Vorrichtung für die zufuhr eines fluids für explosionsumformen
WO2010146445A8 (en) Feed assembly for metering tablets into capsules
MY164548A (en) Solids processing valve
WO2010131834A3 (ko) 패킹부재를 구비한 집진장치
WO2012080716A3 (en) Electro chemical deposition apparatus

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08846738

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08846738

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP