WO2009057359A1 - 添加剤除去方法、添加剤除去装置およびメッキシステム - Google Patents

添加剤除去方法、添加剤除去装置およびメッキシステム Download PDF

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Publication number
WO2009057359A1
WO2009057359A1 PCT/JP2008/062807 JP2008062807W WO2009057359A1 WO 2009057359 A1 WO2009057359 A1 WO 2009057359A1 JP 2008062807 W JP2008062807 W JP 2008062807W WO 2009057359 A1 WO2009057359 A1 WO 2009057359A1
Authority
WO
WIPO (PCT)
Prior art keywords
resin film
removal device
plating layer
additive removal
template agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062807
Other languages
English (en)
French (fr)
Inventor
Takeshi Yane
Kuniko Teraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to KR1020097009374A priority Critical patent/KR101127338B1/ko
Priority to JP2009512352A priority patent/JP4906920B2/ja
Publication of WO2009057359A1 publication Critical patent/WO2009057359A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
    • H01M14/005—Photoelectrochemical storage cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C25F3/30—Polishing of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/22—Servicing or operating apparatus or multistep processes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02—Tanks; Installations therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/04—Removal of gases or vapours ; Gas or pressure control
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/06—Wires; Strips; Foils
    • C25D7/0614—Strips or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/07—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process being removed electrolytically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemically Coating (AREA)

Abstract

　メッキシステムは、テンプレート剤を含むメッキ液に樹脂フィルム（９）を浸漬することにより樹脂フィルム（９）上にメッキ層を形成するメッキ層形成部、および、樹脂フィルム（９）上のメッキ層からテンプレート剤を除去する除去装置（４）を備える。除去装置（４）は、樹脂フィルム（９）が浸漬される除去液（４１１）を貯溜する除去液槽（４１）、および、除去液（４１１）内の樹脂フィルム（９）に向けて光を照射する光照射部（４２）を有する。除去装置（４）では、光照射部（４２）からの光によりメッキ層からのテンプレート剤の脱離が促進されることにより、メッキ層からテンプレート剤を効率よく除去することができる。
PCT/JP2008/062807 2007-10-31 2008-07-16 添加剤除去方法、添加剤除去装置およびメッキシステム Ceased WO2009057359A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020097009374A KR101127338B1 (ko) 2007-10-31 2008-07-16 첨가제 제거방법, 첨가제 제거장치 및 도금 시스템
JP2009512352A JP4906920B2 (ja) 2007-10-31 2008-07-16 添加剤除去方法、添加剤除去装置およびメッキシステム

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007283492 2007-10-31
JP2007-283492 2007-10-31

Publications (1)

Publication Number Publication Date
WO2009057359A1 true WO2009057359A1 (ja) 2009-05-07

Family

ID=40590762

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062807 Ceased WO2009057359A1 (ja) 2007-10-31 2008-07-16 添加剤除去方法、添加剤除去装置およびメッキシステム

Country Status (4)

Country Link
JP (1) JP4906920B2 (ja)
KR (1) KR101127338B1 (ja)
TW (1) TWI373147B (ja)
WO (1) WO2009057359A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201338026A (zh) * 2012-03-08 2013-09-16 Chung Shan Inst Of Science 多段可調連續式電化學拋光系統

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006235A (ja) * 2002-03-29 2004-01-08 Nagoya Industrial Science Research Inst 色素増感太陽電池基体用の多孔質酸化亜鉛薄膜及び色素増感太陽電池の光電極材料用の酸化亜鉛／色素複合薄膜並びにこれらの製造方法、酸化亜鉛／色素複合薄膜を光電極材料に用いる色素増感太陽電池

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680198B2 (ja) * 1984-12-12 1994-10-12 日立電線株式会社 銀めつき製品の後処理方法
JPS62107093A (ja) * 1985-11-05 1987-05-18 Mitsubishi Electric Corp 銅合金条の錫−鉛合金被膜処理方法
JP2754289B2 (ja) * 1991-06-14 1998-05-20 有限会社 光電鍍工業所 表面処理加工を行った金属の乾燥方法
JP3057672B2 (ja) * 1994-06-28 2000-07-04 有限会社光電鍍工業所 表面処理加工を行った金属の乾燥方法
JPH10140373A (ja) 1997-02-04 1998-05-26 Canon Inc 酸化亜鉛薄膜の製造方法、それを用いた半導体素子基板及び光起電力素子
JP2004107093A (ja) * 2002-07-26 2004-04-08 Seiko Epson Corp 給紙装置、記録装置、液体噴射装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006235A (ja) * 2002-03-29 2004-01-08 Nagoya Industrial Science Research Inst 色素増感太陽電池基体用の多孔質酸化亜鉛薄膜及び色素増感太陽電池の光電極材料用の酸化亜鉛／色素複合薄膜並びにこれらの製造方法、酸化亜鉛／色素複合薄膜を光電極材料に用いる色素増感太陽電池

Also Published As

Publication number Publication date
TWI373147B (en) 2012-09-21
KR101127338B1 (ko) 2012-03-29
JP4906920B2 (ja) 2012-03-28
JPWO2009057359A1 (ja) 2011-03-10
KR20090086406A (ko) 2009-08-12
TW200926423A (en) 2009-06-16

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