WO2009044798A1 - プラズマ処理装置およびプラズマ密度分布の調整方法 - Google Patents

プラズマ処理装置およびプラズマ密度分布の調整方法 Download PDF

Info

Publication number
WO2009044798A1
WO2009044798A1 PCT/JP2008/067907 JP2008067907W WO2009044798A1 WO 2009044798 A1 WO2009044798 A1 WO 2009044798A1 JP 2008067907 W JP2008067907 W JP 2008067907W WO 2009044798 A1 WO2009044798 A1 WO 2009044798A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
processing apparatus
density distribution
dielectric member
coaxial waveguide
Prior art date
Application number
PCT/JP2008/067907
Other languages
English (en)
French (fr)
Inventor
Caizhong Tian
Kiyotaka Ishibashi
Toshihisa Nozawa
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to CN2008801101394A priority Critical patent/CN101855946B/zh
Priority to JP2009536078A priority patent/JP5552316B2/ja
Priority to KR1020107007389A priority patent/KR101176063B1/ko
Priority to US12/681,434 priority patent/US8273210B2/en
Publication of WO2009044798A1 publication Critical patent/WO2009044798A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges

Abstract

【課題】プラズマ処理装置の処理室内に生成されるプラズマ密度を特に円周方向において調整できるようにする。 【解決手段】同軸導波管３０から供給されたマイクロ波が遅波板２５を介して処理容器２内に導入され、処理容器２内において処理ガスがプラズマ化されて基板Ｗが処理されるプラズマ処理装置１であって、同軸導波管３０と遅波板２５との連結箇所に誘電体部材４５が配置され、誘電体部材４５は、同軸導波管３０の外部導体３２の内部において、内部導体３１を中心とする円周方向の一部に配置され、かつ、誘電体部材４５は、内部導体３１を中心とする円周方向の任意の位置に配置される。  
PCT/JP2008/067907 2007-10-04 2008-10-02 プラズマ処理装置およびプラズマ密度分布の調整方法 WO2009044798A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2008801101394A CN101855946B (zh) 2007-10-04 2008-10-02 等离子体处理装置以及等离子体密度分布的调节方法
JP2009536078A JP5552316B2 (ja) 2007-10-04 2008-10-02 プラズマ処理装置およびプラズマ処理方法
KR1020107007389A KR101176063B1 (ko) 2007-10-04 2008-10-02 플라즈마 처리 장치 및 플라즈마 밀도 분포의 조정 방법
US12/681,434 US8273210B2 (en) 2007-10-04 2008-10-02 Plasma processing apparatus and method for adjusting plasma density distribution

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-260550 2007-10-04
JP2007260550 2007-10-04

Publications (1)

Publication Number Publication Date
WO2009044798A1 true WO2009044798A1 (ja) 2009-04-09

Family

ID=40526222

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067907 WO2009044798A1 (ja) 2007-10-04 2008-10-02 プラズマ処理装置およびプラズマ密度分布の調整方法

Country Status (6)

Country Link
US (1) US8273210B2 (ja)
JP (1) JP5552316B2 (ja)
KR (1) KR101176063B1 (ja)
CN (1) CN101855946B (ja)
TW (1) TWI393488B (ja)
WO (1) WO2009044798A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011040328A1 (ja) * 2009-09-29 2011-04-07 東京エレクトロン株式会社 表面波プラズマ発生用アンテナ、マイクロ波導入機構、および表面波プラズマ処理装置
WO2011058921A1 (ja) * 2009-11-12 2011-05-19 東京エレクトロン株式会社 プラズマ処理装置およびマイクロ波伝播体
US20120180953A1 (en) * 2009-09-30 2012-07-19 Tokyo Electron Limited Plasma processing apparatus and wave retardation plate used therein

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103151620B (zh) * 2013-02-04 2014-12-24 中国人民解放军国防科学技术大学 高功率微波径向线缝隙阵列天线
WO2017165550A1 (en) 2016-03-22 2017-09-28 Tokyo Electron Limited System and method for temperature control in plasma processing system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203098A (ja) * 2000-01-18 2001-07-27 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造
JP2002294460A (ja) * 2001-03-28 2002-10-09 Tadahiro Omi マイクロ波プラズマプロセス装置及びプラズマプロセス制御方法
JP2002299314A (ja) * 2001-03-28 2002-10-11 Tadahiro Omi プラズマ処理装置
JP2007335346A (ja) * 2006-06-19 2007-12-27 Tokyo Electron Ltd マイクロ波導入装置及びプラズマ処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2743585B2 (ja) * 1990-01-16 1998-04-22 株式会社日立製作所 マイクロ波プラズマ処理装置
US5111111A (en) * 1990-09-27 1992-05-05 Consortium For Surface Processing, Inc. Method and apparatus for coupling a microwave source in an electron cyclotron resonance system
US6388632B1 (en) * 1999-03-30 2002-05-14 Rohm Co., Ltd. Slot antenna used for plasma surface processing apparatus
JP2002299331A (ja) * 2001-03-28 2002-10-11 Tadahiro Omi プラズマ処理装置
JP4837854B2 (ja) * 2001-09-28 2011-12-14 東京エレクトロン株式会社 整合器およびプラズマ処理装置
US20060137613A1 (en) * 2004-01-27 2006-06-29 Shigeru Kasai Plasma generating apparatus, plasma generating method and remote plasma processing apparatus
US7584714B2 (en) * 2004-09-30 2009-09-08 Tokyo Electron Limited Method and system for improving coupling between a surface wave plasma source and a plasma space
US7138767B2 (en) * 2004-09-30 2006-11-21 Tokyo Electron Limited Surface wave plasma processing system and method of using
US7396431B2 (en) * 2004-09-30 2008-07-08 Tokyo Electron Limited Plasma processing system for treating a substrate
JP4149427B2 (ja) 2004-10-07 2008-09-10 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
DE102006031990A1 (de) * 2006-07-11 2008-01-17 Merck Patent Gmbh Neue Materialien für organische Elektrolumineszenzvorrichtungen

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203098A (ja) * 2000-01-18 2001-07-27 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造
JP2002294460A (ja) * 2001-03-28 2002-10-09 Tadahiro Omi マイクロ波プラズマプロセス装置及びプラズマプロセス制御方法
JP2002299314A (ja) * 2001-03-28 2002-10-11 Tadahiro Omi プラズマ処理装置
JP2007335346A (ja) * 2006-06-19 2007-12-27 Tokyo Electron Ltd マイクロ波導入装置及びプラズマ処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011040328A1 (ja) * 2009-09-29 2011-04-07 東京エレクトロン株式会社 表面波プラズマ発生用アンテナ、マイクロ波導入機構、および表面波プラズマ処理装置
US20120180953A1 (en) * 2009-09-30 2012-07-19 Tokyo Electron Limited Plasma processing apparatus and wave retardation plate used therein
WO2011058921A1 (ja) * 2009-11-12 2011-05-19 東京エレクトロン株式会社 プラズマ処理装置およびマイクロ波伝播体

Also Published As

Publication number Publication date
US20100252412A1 (en) 2010-10-07
KR20100049691A (ko) 2010-05-12
CN101855946B (zh) 2013-02-13
TWI393488B (zh) 2013-04-11
TW200935987A (en) 2009-08-16
US8273210B2 (en) 2012-09-25
CN101855946A (zh) 2010-10-06
JPWO2009044798A1 (ja) 2011-02-10
KR101176063B1 (ko) 2012-08-24
JP5552316B2 (ja) 2014-07-16

Similar Documents

Publication Publication Date Title
KR100642157B1 (ko) 플라즈마 처리 장치 및 방법 그리고 플라즈마 생성용전극판
KR100652983B1 (ko) 플라즈마 처리 장치 및 방법
KR100652982B1 (ko) 플라즈마 처리 방법 및 장치
TWI681073B (zh) 電漿處理裝置
US20100101727A1 (en) Capacitively coupled remote plasma source with large operating pressure range
KR101833127B1 (ko) 마이크로파 플라즈마원 및 플라즈마 처리 장치
KR101008746B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
US20040011465A1 (en) Plasma Processing apparatus
US20110133650A1 (en) Apparatus for generating plasma
JP2013182996A5 (ja)
US10991549B2 (en) Antenna and plasma deposition apparatus
WO2009044798A1 (ja) プラズマ処理装置およびプラズマ密度分布の調整方法
TW201331408A (zh) 電漿處理裝置
US11456157B2 (en) Plasma processing apparatus
TWI469696B (zh) 電漿處理裝置
CN102458032A (zh) 微波等离子体源和等离子体处理装置
US20170032933A1 (en) Microwave Plasma Source and Plasma Processing Apparatus
WO2006009213A1 (ja) プラズマ処理装置
US20090152243A1 (en) Plasma processing apparatus and method thereof
US20070221833A1 (en) Plasma generating apparatus and method using neutral beam
WO2018192064A1 (zh) 表面波等离子体加工设备
TW201339352A (zh) 電漿處理方法及電漿處理裝置
CN108878248A (zh) 等离子体处理装置
US7777599B2 (en) Methods and apparatus for controlling characteristics of a plasma
KR102044097B1 (ko) 플라즈마 처리 장치

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880110139.4

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08835501

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009536078

Country of ref document: JP

ENP Entry into the national phase

Ref document number: 20107007389

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12681434

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 08835501

Country of ref document: EP

Kind code of ref document: A1