WO2009041270A1 - 液浸用上層膜形成用組成物及び液浸用上層膜並びにフォトレジストパターン形成方法 - Google Patents

液浸用上層膜形成用組成物及び液浸用上層膜並びにフォトレジストパターン形成方法 Download PDF

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Publication number
WO2009041270A1
WO2009041270A1 PCT/JP2008/066351 JP2008066351W WO2009041270A1 WO 2009041270 A1 WO2009041270 A1 WO 2009041270A1 JP 2008066351 W JP2008066351 W JP 2008066351W WO 2009041270 A1 WO2009041270 A1 WO 2009041270A1
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WO
WIPO (PCT)
Prior art keywords
upper layer
layer film
immersion exposure
forming
composition
Prior art date
Application number
PCT/JP2008/066351
Other languages
English (en)
French (fr)
Inventor
Daita Kouno
Norihiko Sugie
Gouji Wakamatsu
Norihiro Natsume
Yukio Nishimura
Original Assignee
Jsr Corporation
Sugiura Makoto
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation, Sugiura Makoto filed Critical Jsr Corporation
Priority to KR1020147006572A priority Critical patent/KR101433565B1/ko
Priority to KR1020107006497A priority patent/KR101426116B1/ko
Priority to JP2009534267A priority patent/JP5229228B2/ja
Priority to US12/680,200 priority patent/US8431332B2/en
Publication of WO2009041270A1 publication Critical patent/WO2009041270A1/ja
Priority to US13/854,214 priority patent/US8697344B2/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

　本発明の目的は、ウォーターマーク欠陥や溶け残り欠陥等の液浸露光プロセス由来の欠陥発生を効果的に抑制できる上層膜を形成可能な液浸用上層膜形成用組成物及び液浸用上層膜並びにレジストパターン形成方法を提供することである。本発明の上層膜形成用組成物は、樹脂成分と溶剤とを含むものであり、樹脂成分として、式（１－１）～（１－３）で表される繰り返し単位のうちの少なくとも１種と、式（２－１）及び（２－２）で表される繰り返し単位のうちの少なくとも一方と、を含有する樹脂（Ａ）を含む。 ［式中、Ｒ１は水素原子又はメチル基を示し、Ｒ２及びＲ３はメチレン基、炭素数２～６の直鎖状若しくは分岐状のアルキレン基、又は炭素数４～１２の脂環式のアルキレン基を示し、Ｒ４は水素原子又はメチル基を示し、Ｒ５は単結合、メチレン基、又は炭素数２～６の直鎖状若しくは分岐状のアルキレン基を示す。］
PCT/JP2008/066351 2007-09-26 2008-09-10 液浸用上層膜形成用組成物及び液浸用上層膜並びにフォトレジストパターン形成方法 WO2009041270A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020147006572A KR101433565B1 (ko) 2007-09-26 2008-09-10 액침용 상층막 형성용 조성물 및 액침용 상층막 및 포토레지스트 패턴 형성 방법
KR1020107006497A KR101426116B1 (ko) 2007-09-26 2008-09-10 액침용 상층막 형성용 조성물 및 액침용 상층막 및 포토레지스트 패턴 형성 방법
JP2009534267A JP5229228B2 (ja) 2007-09-26 2008-09-10 液浸用上層膜形成用組成物及び液浸用上層膜並びにフォトレジストパターン形成方法
US12/680,200 US8431332B2 (en) 2007-09-26 2008-09-10 Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern
US13/854,214 US8697344B2 (en) 2007-09-26 2013-04-01 Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007250080 2007-09-26
JP2007-250080 2007-09-26

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/680,200 A-371-Of-International US8431332B2 (en) 2007-09-26 2008-09-10 Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern
US13/854,214 Continuation US8697344B2 (en) 2007-09-26 2013-04-01 Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern

Publications (1)

Publication Number Publication Date
WO2009041270A1 true WO2009041270A1 (ja) 2009-04-02

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PCT/JP2008/066351 WO2009041270A1 (ja) 2007-09-26 2008-09-10 液浸用上層膜形成用組成物及び液浸用上層膜並びにフォトレジストパターン形成方法

Country Status (5)

Country Link
US (2) US8431332B2 (ja)
JP (1) JP5229228B2 (ja)
KR (2) KR101426116B1 (ja)
TW (1) TWI444776B (ja)
WO (1) WO2009041270A1 (ja)

Cited By (18)

* Cited by examiner, † Cited by third party
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JP2009205132A (ja) * 2008-01-31 2009-09-10 Shin Etsu Chem Co Ltd レジスト保護膜材料及びパターン形成方法
JP2010237646A (ja) * 2008-12-31 2010-10-21 Rohm & Haas Electronic Materials Llc フォトリソグラフィーのための組成物および方法
WO2011081269A1 (ko) * 2009-12-31 2011-07-07 제일모직 주식회사 (메타)아크릴레이트 화합물, 이로부터 유도된 반복단위를 포함하는 고분자 및 보호막 형성용 조성물
WO2011118644A1 (ja) * 2010-03-23 2011-09-29 Jsr株式会社 上層膜形成用組成物及びレジストパターン形成方法
JP2011209647A (ja) * 2010-03-30 2011-10-20 Jsr Corp 上層膜形成組成物及びフォトレジストパターン形成方法
JP2011215405A (ja) * 2010-03-31 2011-10-27 Jsr Corp 液浸用上層膜形成用組成物
WO2012043762A1 (ja) * 2010-09-29 2012-04-05 Jsr株式会社 液浸上層膜形成用組成物及び重合体
JP2012215721A (ja) * 2011-03-31 2012-11-08 Jsr Corp 液浸用上層膜形成用組成物
US8603726B2 (en) 2010-09-29 2013-12-10 Jsr Corporation Radiation-sensitive resin composition, polymer and compound
US8609319B2 (en) 2010-10-01 2013-12-17 Jsr Corporation Radiation-sensitive resin composition and resist film formed using the same
KR20140042681A (ko) 2012-09-28 2014-04-07 제이에스알 가부시끼가이샤 액침 상층막 형성용 조성물, 레지스트 패턴 형성 방법, 중합체 및 화합물
US8765355B2 (en) 2010-08-19 2014-07-01 Jsr Corporation Radiation sensitive resin composition, method for forming a pattern, polymer and compound
JP2014215541A (ja) * 2013-04-26 2014-11-17 富士フイルム株式会社 パターン形成方法、組成物キット、及びレジスト膜、並びにこれらを用いた電子デバイスの製造方法、及び電子デバイス
US9040221B2 (en) 2010-05-20 2015-05-26 Jsr Corporation Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound
US9259668B2 (en) 2012-02-17 2016-02-16 Jsr Corporation Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate
US9268225B2 (en) 2011-11-11 2016-02-23 Jsr Corporation Composition, resist pattern-forming method, compound, method for production of compound, and polymer
WO2018084084A1 (ja) * 2016-11-01 2018-05-11 Jsr株式会社 樹脂組成物及びその用途
US10423083B2 (en) 2012-02-17 2019-09-24 Jsr Corporation Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate

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WO2009041270A1 (ja) * 2007-09-26 2009-04-02 Jsr Corporation 液浸用上層膜形成用組成物及び液浸用上層膜並びにフォトレジストパターン形成方法
JP6350080B2 (ja) * 2014-07-31 2018-07-04 Jsr株式会社 半導体基板洗浄用組成物
US11340528B2 (en) 2019-12-11 2022-05-24 Jsr Corporation Production method of composition for resist top coat layer, method of forming resist pattern, production method of fluorine-containing resin, and method of improving water repellency of resist top coat layer

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JP2006335916A (ja) * 2005-06-03 2006-12-14 Jsr Corp 液浸上層膜用重合体および液浸用上層膜形成組成物
WO2008047678A1 (fr) * 2006-10-13 2008-04-24 Jsr Corporation Composition pour la formation d'un film de couche supérieure et procédé de formation d'un motif en photorésine

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JP2009205132A (ja) * 2008-01-31 2009-09-10 Shin Etsu Chem Co Ltd レジスト保護膜材料及びパターン形成方法
JP2010237646A (ja) * 2008-12-31 2010-10-21 Rohm & Haas Electronic Materials Llc フォトリソグラフィーのための組成物および方法
WO2011081269A1 (ko) * 2009-12-31 2011-07-07 제일모직 주식회사 (메타)아크릴레이트 화합물, 이로부터 유도된 반복단위를 포함하는 고분자 및 보호막 형성용 조성물
WO2011118644A1 (ja) * 2010-03-23 2011-09-29 Jsr株式会社 上層膜形成用組成物及びレジストパターン形成方法
US8501389B2 (en) 2010-03-23 2013-08-06 Jsr Corporation Upper layer-forming composition and resist patterning method
JP5234221B2 (ja) * 2010-03-23 2013-07-10 Ｊｓｒ株式会社 上層膜形成用組成物及びレジストパターン形成方法
JPWO2011118644A1 (ja) * 2010-03-23 2013-07-04 Jsr株式会社 上層膜形成用組成物及びレジストパターン形成方法
JP2011209647A (ja) * 2010-03-30 2011-10-20 Jsr Corp 上層膜形成組成物及びフォトレジストパターン形成方法
JP2011215405A (ja) * 2010-03-31 2011-10-27 Jsr Corp 液浸用上層膜形成用組成物
US9261780B2 (en) 2010-05-20 2016-02-16 Jsr Corporation Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound
US9040221B2 (en) 2010-05-20 2015-05-26 Jsr Corporation Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound
US8765355B2 (en) 2010-08-19 2014-07-01 Jsr Corporation Radiation sensitive resin composition, method for forming a pattern, polymer and compound
WO2012043762A1 (ja) * 2010-09-29 2012-04-05 Jsr株式会社 液浸上層膜形成用組成物及び重合体
US8603726B2 (en) 2010-09-29 2013-12-10 Jsr Corporation Radiation-sensitive resin composition, polymer and compound
US9926462B2 (en) 2010-09-29 2018-03-27 Jsr Corporation Composition for forming liquid immersion upper layer film, and polymer
US20170073541A1 (en) * 2010-09-29 2017-03-16 Jsr Corporation Composition for forming liquid immersion upper layer film, and polymer
JP5720692B2 (ja) * 2010-09-29 2015-05-20 Jsr株式会社 液浸上層膜形成用組成物及び重合体
US9540535B2 (en) 2010-09-29 2017-01-10 Jsr Corporation Composition for forming liquid immersion upper layer film, and polymer
US8609319B2 (en) 2010-10-01 2013-12-17 Jsr Corporation Radiation-sensitive resin composition and resist film formed using the same
JP2012215721A (ja) * 2011-03-31 2012-11-08 Jsr Corp 液浸用上層膜形成用組成物
US9268225B2 (en) 2011-11-11 2016-02-23 Jsr Corporation Composition, resist pattern-forming method, compound, method for production of compound, and polymer
US9259668B2 (en) 2012-02-17 2016-02-16 Jsr Corporation Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate
US10423083B2 (en) 2012-02-17 2019-09-24 Jsr Corporation Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate
US9046775B2 (en) 2012-09-28 2015-06-02 Jsr Corporation Composition for forming liquid immersion upper layer film, resist pattern-forming method, polymer, and compound
KR20140042681A (ko) 2012-09-28 2014-04-07 제이에스알 가부시끼가이샤 액침 상층막 형성용 조성물, 레지스트 패턴 형성 방법, 중합체 및 화합물
JP2014215541A (ja) * 2013-04-26 2014-11-17 富士フイルム株式会社 パターン形成方法、組成物キット、及びレジスト膜、並びにこれらを用いた電子デバイスの製造方法、及び電子デバイス
US10031419B2 (en) 2013-04-26 2018-07-24 Fujifilm Corporation Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device
WO2018084084A1 (ja) * 2016-11-01 2018-05-11 Jsr株式会社 樹脂組成物及びその用途

Also Published As

Publication number Publication date
JP5229228B2 (ja) 2013-07-03
KR101433565B1 (ko) 2014-08-27
KR20100068261A (ko) 2010-06-22
US20130216961A1 (en) 2013-08-22
US8697344B2 (en) 2014-04-15
TW200919091A (en) 2009-05-01
JPWO2009041270A1 (ja) 2011-01-20
TWI444776B (zh) 2014-07-11
KR101426116B1 (ko) 2014-08-05
US20100255416A1 (en) 2010-10-07
KR20140037976A (ko) 2014-03-27
US8431332B2 (en) 2013-04-30

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