WO2009039824A2 - Composant optoélectronique et lentille de découplage pour composant optoélectronique - Google Patents

Composant optoélectronique et lentille de découplage pour composant optoélectronique Download PDF

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Publication number
WO2009039824A2
WO2009039824A2 PCT/DE2008/001511 DE2008001511W WO2009039824A2 WO 2009039824 A2 WO2009039824 A2 WO 2009039824A2 DE 2008001511 W DE2008001511 W DE 2008001511W WO 2009039824 A2 WO2009039824 A2 WO 2009039824A2
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WO
WIPO (PCT)
Prior art keywords
radiation
semiconductor body
optoelectronic component
wavelength
coupling
Prior art date
Application number
PCT/DE2008/001511
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German (de)
English (en)
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WO2009039824A3 (fr
Inventor
Ralph Wirth
Bernd Barchmann
Original Assignee
Osram Opto Semiconductors Gmbh
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Publication of WO2009039824A2 publication Critical patent/WO2009039824A2/fr
Publication of WO2009039824A3 publication Critical patent/WO2009039824A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Definitions

  • Optoelectronic component and coupling-out lens for an optoelectronic component are Optoelectronic component and coupling-out lens for an optoelectronic component
  • the invention relates to an optoelectronic component and a coupling-out lens for an optoelectronic component.
  • Optoelectronic components with a semiconductor body which emits radiation of a first wavelength range generally comprise a wavelength conversion substance for producing mixed-colored, for example white, light.
  • the wavelength conversion substance converts part of the radiation of a first wavelength range emitted by the semiconductor body into radiation of a second wavelength range different from the first wavelength range.
  • Such components are described, for example, in the publications WO 02/056390 A1, WO 2006/034703 A1 and Journal of Display Technology, Vol. 3, NO. 2, June 2007, pages 155-159.
  • the wavelength conversion substance can be introduced into a potting of the semiconductor body, for example, or be applied directly to the semiconductor body in the form of a layer.
  • the heat dissipation from the wavelength conversion substance in the first case is low and the wavelength conversion substance is therefore exposed to a high heat load during operation of the optoelectronic component.
  • the wavelength conversion substance is exposed to a high radiation load, which is also too a high heat load of wavelength conversion material leads.
  • Semiconductor body is applied, have a relatively inhomogeneous radiation with respect to the intensity and the color locus.
  • the object of the invention is an optoelectronic
  • a further object of the invention is to provide a coupling-out lens for an optoelectronic component which leads to a radiation characteristic of the component which is homogenized with respect to the color locus and / or the intensity.
  • An optoelectronic component comprises in particular: at least one semiconductor body, which is intended to emit electromagnetic radiation of a first wavelength range,
  • a wavelength-converting layer which is arranged laterally of the semiconductor body on the mirror and comprises a wavelength conversion substance which is suitable for converting at least part of the radiation of the first wavelength range emitted by the semiconductor body into radiation of a second wavelength range different from the first wave range.
  • the optoelectronic component does not necessarily have a single semiconductor body. Rather, the optoelectronic component can have a plurality of semiconductor bodies, which are likewise arranged on the heat sink. Features which are described only with reference to a semiconductor body can also be exhibited by some or all semiconductor bodies in the case where the optoelectronic component comprises a plurality of semiconductor bodies.
  • the wavelength-converting layer can also be arranged between the semiconductor bodies.
  • the semiconductor bodies are arranged in a symmetrical, preferably point-symmetrical pattern.
  • the semiconductor bodies may, for example, be arranged along a line or according to a regular grid.
  • the regular grid may be formed, for example, in the manner of a square or hexagonal grid. If the optoelectronic component comprises a plurality of semiconductor bodies, then they do not necessarily have to emit radiation of the same wavelength range. Rather, the semiconductor bodies can emit radiation of different wavelength ranges.
  • the semiconductor bodies emit radiation of different wavelength ranges, preferably only radiation of one wavelength range is used by means of a
  • Wavelength conversion substance is converted into radiation of another wavelength range, while the radiation of the remaining wavelength ranges remains unconverted. But it is also conceivable, at least part of the radiation of the remaining wavelength ranges by means of another
  • a radiation passage side of the semiconductor body is preferably free of the wavelength-converting layer.
  • the heat sink may be, for example, a printed circuit board, such as a metal core board.
  • the heat sink may comprise at least one of the following materials or consist of at least one of the following materials: copper, aluminum nitride, aluminum oxide, silicon, silver, aluminum.
  • the heat sink conducts heat better than a potting material.
  • the mirror has the task of radiation converted by the wavelength-converting layer of the second wavelength range and / or unconverted radiation emitted by the semiconductor body radiation of the first wavelength range, which is emitted to the back of the device, to deflect a radiation-emitting front side of the optoelectronic component.
  • the mirror can also be formed below the semiconductor body between the semiconductor body and the heat sink.
  • the term "on the heat sink” does not necessarily mean that the semiconductor body is in direct contact with the heat sink.
  • the mirror is disposed in direct contact with the heat sink, that is, the mirror forms a common interface with the heat sink.
  • the wavelength-converting layer is arranged in direct contact with the mirror, that is, the wavelength-converting layer forms a common
  • the wavelength-converting layer is applied to an inner region of the mirror, so that an outer region of the mirror is free of the wavelength-converting layer.
  • the outer area is at least partially encircling around the
  • ring-shaped means not necessarily that the outer area is annular.
  • the inner area is circular, while the outer area is designed as a circular ring encircling the inner area.
  • the semiconductor body is arranged centered on the inner region, that is, a centroid of the radiation passage side of the semiconductor body and a centroid of the inner region are arranged on an optical axis of the optoelectronic component, wherein the optical axis is perpendicular to the mirror. If, for example, the inner region forms a circle and the radiation passage side of the semiconductor body forms a rectangle, then the center of the circle forming the centroid of the inner region and the center of the rectangle forming the centroid of the radiation passage side of the semiconductor body are superimposed on one another in this embodiment optical axis. Does the optoelectronic component several
  • Semiconductor body they are preferably arranged in this embodiment in a point-symmetrical pattern, wherein the symmetry point of the point-symmetrical pattern is disposed on the centroid of the inner region.
  • the mirror has a reflectance of at least 0.98 for electromagnetic radiation of the first and / or the second wavelength range. So it is possible, a particularly good deflection of the electromagnetic radiation to
  • roughness peaks of the mirror have a height of at most 40 nm.
  • Mirror formed at least within the outer region, which is free of the wavelength-converting layer, specular reflective for radiation of the first and / or the second wavelength range.
  • the mirror preferably comprises a metallic layer and a Bragg mirror.
  • the mirror is formed by a metallic layer and a Bragg mirror.
  • a mirror with a metallic layer and a Bragg mirror usually has a high reflectivity of at least 0.98.
  • the metallic layer and the Bragg mirror are preferably arranged such that the surface of the mirror is formed by the Bragg mirror.
  • a mirror whose surface is formed by a Bragg mirror usually has a low roughness with roughness peaks not higher than 40 nm. Furthermore, such a mirror is usually formed specular reflective for visible radiation.
  • the metallic layer comprises, for example, aluminum or consists of aluminum.
  • the metallic layer is not thinner than 100 nm.
  • the metallic layer forms the heat sink.
  • the metallic layer preferably has a thickness which is in the range of a few millimeters.
  • the Bragg mirror is preferably constructed alternately from two silicon oxide layers each and from two titanium oxide layers, that is, the Bragg mirror has two
  • the silicon oxide layers comprise silicon oxide or consist of silicon oxide.
  • the titanium oxide layers include titanium oxide or titanium oxide.
  • the wavelength conversion substance comprises at least one substance from the group which is formed by: garnets doped with rare-earth metals and doped with metals of the rare earths
  • the binder may, for example, comprise one of the following materials or one of the following _Q
  • Materials include: silicone, glass or a ceramic material such as aluminum nitride and aluminum oxide.
  • the wavelength conversion substance may also be applied to the mirror as a wavelength-converting layer, for example by means of electrophoresis.
  • a scattering body preferably a scattering compound, is arranged above the semiconductor body and the wavelength-converting layer.
  • the scatterer is designed to backscatter unconverted radiation to increase the degree of conversion to the wavelength-converting layer and to mix converted and unconverted radiation.
  • the scattering body comprises scattering particles.
  • the scattering particles comprise, for example, at least one of the following materials or consist of at least one of the following materials: alumina, titania.
  • the scattering particles are embedded in a matrix material which comprises at least one of the following materials or consists of at least one of the following materials: silicone, epoxy.
  • the scattering body is shaped in the manner of a hemisphere or in the manner of a hemisphere shell. Particularly preferred is the scattering body in this
  • Embodiment arranged such that the hemisphere or hemisphere shell is centered over the semiconductor body, that is, that the centroid of the Radiation passage side of the semiconductor body and the center of the hemisphere or the hemisphere shell lie on the optical axis of the optoelectronic component.
  • the optoelectronic component comprises a plurality of semiconductor bodies, they are preferably arranged according to a point-symmetrical pattern in this embodiment, the point of symmetry being at the center of the hemisphere.
  • the hemisphere or hemisphere shell preferably ends laterally with the wavelength-converting layer.
  • the wavelength-converting layer is thus preferably in its entirety below the scattering body.
  • the space between the semiconductor body and the scattering body is, according to one embodiment, filled with a transparent filling body, for example a transparent casting.
  • the transparent filler is particularly preferably free of scattering particles. Particularly preferred is the space between the semiconductor body and the
  • Scatter body completely filled with a transparent filler that is, that no air-filled gap between the semiconductor body and the scattering body is present.
  • the optoelectronic component has a coupling-out lens which is provided for coupling out the radiation emitted by the optoelectronic component from the component.
  • the radiation-emitting front side of the optoelectronic component is in this case
  • Embodiment usually formed by an outer side of the coupling lens.
  • the outside of the coupling-out lens may further comprise, for example, an antireflecting layer.
  • the coupling-out lens may be a separately manufactured element which is, for example, milled, turned or injection-molded and is fastened to the optoelectronic component in an assembly step.
  • the coupling-out lens is also possible for the coupling-out lens to be manufactured on the optoelectronic component, for example, by producing the coupling-out lens as encapsulation of the scattering element or of the semiconductor body on the optoelectronic component.
  • the coupling-out lens is free of scattering particles.
  • the coupling-out lens is preferably arranged above the scattering body.
  • the coupling-out lens is arranged in direct contact with the scattering body, that is, the coupling-out lens forms a common interface with the scattering body.
  • the coupling-out lens is formed in the manner of a hemispherical shell, which is arranged centered over the semiconductor body, that is to say that the area centroid of the radiation passage side of the semiconductor body and the center of the hemisphere shell are arranged on the optical axis of the optoelectronic component.
  • the optoelectronic component comprises a plurality of semiconductor bodies, they are preferably arranged according to a point-symmetrical pattern in this embodiment, the point of symmetry of the pattern being and the center of the hemisphere are on the optical axis.
  • the coupling-out lens fulfills the Weierstrass conditions.
  • the coupling lens on an inner side, which is enclosed by an inner hemisphere surface with radius Rinn e n.
  • the coupling-out lens has an outer side which encloses an outer hemispherical surface with radius R out .
  • the output lens satisfies the Weierstrass condition when the radii Rinn s and R n ausse satisfy the following inequality:
  • n refractive index of the lens of the output lens and the refractive index ni runs the vicinity of the coupling-out lens, typically air.
  • inner and outer hemispherical surfaces are virtual surfaces which need not necessarily be formed in the device as objective features.
  • the coupling-out lens satisfies the Weierstrass condition when the Weierstrass hemisphere shell formed by the inner hemisphere surface of the radius Ri and the outer hemisphere shell of the radius R is externally located in its entirety within the coupling-out lens.
  • the inner hemisphere surface contacts the inside in at least one point.
  • the inside of the coupling-out lens can also form the inner hemisphere surface.
  • the outer hemisphere surface contacts the outside the coupling lens in at least one point.
  • the outer side of the coupling-out lens can form the outer hemisphere. If the inner hemisphere surface is formed by the inside of the coupling-out lens and the outer hemisphere surface by the outside of the coupling-out lens, then the coupling-out lens is present as a hemispherical shell.
  • the semiconductor body is preferably arranged such that the centroid of its radiation passage side and the center of the two hemispherical surfaces lie on the optical axis of the optoelectronic component, wherein the optical axis is perpendicular to the mirror.
  • an optoelectronic component comprises a diffuser and a coupling-out lens that fulfills the Weierstrass condition, in other words the outside of the
  • Coupling lens formed in such a manner and spaced from the radiation-emitting semiconductor body arranged that, as seen from the luminous center formed by the litter, no beam falls under total reflection on the outer surface.
  • the semiconductor body usually comprises an active zone which, for example, has a conventional pn junction, a double heterostructure, a single quantum well structure or a multiple
  • Quantum well structure includes. Examples of such multiple quantum well structures are described, for example, in the publications WO 01/39282, WO 98/31055, US Pat. No. 5,831,277, EP 1 017 113 and US Pat. No. 5,684,309, the disclosure content of which is hereby incorporated by reference. If the radiation of the first wavelength range emitted by the semiconductor body comprises only visible radiation, it is generally desirable that the radiation of the first wavelength range emitted by the semiconductor body comprises only visible radiation, it is generally desirable that the
  • Wavelength conversion material converts only a portion of this radiation, while another part of the radiation emitted by the semiconductor body radiation of the first wavelength range, the wavelength-converting layer passes through unconverted.
  • the optoelectronic component emits mixed light which comprises radiation of the first wavelength range and radiation of the second wavelength range.
  • the scattering body can be arranged above the semiconductor body and the wavelength-converting layer, which mixes unconverted radiation of the first wavelength range and converted radiation of the second wavelength range with one another.
  • the semiconductor body emits, for example, visible light from the blue spectral range
  • part of this visible blue radiation of the first wavelength range can be converted into yellow radiation by means of the wavelength conversion substance, so that the optoelectronic component emits mixed light with a color locus in the white area of the CIE standard color chart.
  • the radiation of the first wavelength range emitted by the semiconductor body comprises ultraviolet radiation which is at least partially converted by the wavelength-converting layer into visible radiation.
  • Semiconductor body electromagnetic radiation from the ultraviolet spectral range it is usually preferred, the largest possible proportion of converts ultraviolet radiation of the first wavelength range into visible light.
  • the coupling-out lens is particularly preferably designed to be absorbent or reflective for the ultraviolet radiation emitted by the semiconductor body.
  • the coupling lens for example, have glass or glass.
  • a reflective layer is arranged above the semiconductor body, which is designed to be reflective for radiation of the first wavelength range.
  • a reflective layer is particularly preferred in combination with a
  • the reflective layer is preferably reflective for ultraviolet radiation of the first wavelength range and transmissive for visible radiation of the second
  • Wavelength range formed it is also conceivable to arrange the reflective layer over a semiconductor body which emits visible radiation, for example, if an almost complete conversion of the radiation of the first wavelength range into radiation of the second wavelength range is desired.
  • the reflective layer may be, for example, a dielectric mirror.
  • the reflective layer is applied to the inside of the coupling-out lens.
  • Wavelength range which includes ultraviolet radiation, has a coupling-out lens with the following features:
  • the inner side has an inner portion which has a convex curvature with respect to the emission direction of the Auskoppellinse or a tip at which the slope of the inside changes, and an outer portion which has a concave curvature with respect to the emission direction of the Auskoppellinse, at least partially circulating is formed around the inner portion.
  • the inside of the coupling-out lens is preferably formed rotationally symmetrical with respect to an optical axis of the coupling-out lens.
  • the optical axis particularly preferably runs through the inner subregion. If the coupling-out lens is part of an optoelectronic component, then the optical axis of the coupling-out lens is generally formed by the optical axis of the optoelectronic component.
  • the outside of the coupling-out lens is of spherical design.
  • FIG. 1A a schematic sectional view of an optoelectronic component according to a first exemplary embodiment
  • FIG. 1B a schematic perspective view of the optoelectronic component according to the exemplary embodiment of FIG. 1A,
  • FIG. 1C shows a schematic plan view of the optoelectronic component according to the exemplary embodiment of FIGS. 1A and 1B,
  • FIG. 2B graphical representations of the simulation of the degree of reflection as a function of the wavelength of mirrors according to three exemplary embodiments
  • FIGS. 3A and 3B simulated course of the Cx coordinate of the color locus or of the intensity as a function of the emission angle
  • FIG. 3C simulated course of the Cx coordinate of the color locus as a function of the emission angle
  • FIG. 4A a schematic plan view of an optoelectronic component according to a second embodiment
  • FIG. 4B a schematic sectional view of an optoelectronic component according to a third exemplary embodiment
  • FIG. 5A a schematic perspective illustration of an optoelectronic component according to a fourth exemplary embodiment
  • FIG. 5B a transmission spectrum and a reflection spectrum of the layer sequence which are shown in FIG.
  • Embodiment according to the figure 5A is used as a mirror
  • FIG. 5C a tabulation of a reflective layer sequence according to an exemplary embodiment
  • FIG. 5D graphical representations of the reflection spectrum and the transmission spectrum of the reflective layer sequence of FIG. 5C as a function of the wavelength
  • FIG. 6A a schematic perspective view of an optoelectronic component according to a fifth exemplary embodiment
  • FIG. 6D a schematic plan view of an optoelectronic component according to the exemplary embodiment of FIGS. 6A to 6C, 7A, schematic perspective view of a coupling-out lens according to a first embodiment
  • FIG. 7B shows a schematic sectional illustration of the coupling-out lens according to the exemplary embodiment of FIG. 7A
  • Figure 7D exemplary scale drawing of a coupling lens according to an embodiment.
  • the optoelectronic component according to the exemplary embodiment of FIGS. 1A to 1C has a semiconductor body 1, which is intended to emit electromagnetic radiation of a first wavelength range.
  • the semiconductor body 1 is arranged on a heat sink 2.
  • a mirror 3 is further arranged, which is formed both laterally and below the semiconductor body 1.
  • the mirror 3 is in direct contact with the heat sink 2, that is, it forms a common interface with the heat sink 2 from.
  • the heat sink 2 may be, for example, a printed circuit board.
  • the heat sink 2 may also comprise or consist of one of the following materials: copper, aluminum nitride, aluminum oxide, silicon, silver, aluminum.
  • a wavelength-converting layer 4 is arranged on the mirror 3, while a radiation passage side 5 of the semiconductor body 1 is free of the wavelength-converting layer 4. Furthermore, the wavelength-converting layer 4 is applied to an inner region 6 of the mirror 3 such that an outer region 7 of the mirror 3 is free of the wavelength-converting layer 4.
  • the wavelength-converting layer 4 comprises a
  • Wavelength conversion substance 8 which is suitable for converting at least a portion of the radiation of the first wavelength range emitted by the semiconductor body 1 into radiation of a second wavelength range different from the first wavelength range.
  • the semiconductor body 1 is suitable for emitting radiation of a first wavelength range which has visible blue light which is incident on the wavelength conversion substance 8 in radiation of the second wavelength range
  • Wavelength range is converted, which has yellow visible light.
  • YAG: Ce is used as the wavelength conversion substance 8.
  • the wavelength conversion substance 8 may also be selected from the group formed by the following materials: rare earth doped garnets doped with rare earth metals Alkaline earth sulfides, rare earth doped thiogalates, rare earth doped aluminates, rare earth doped orthosilicates, rare earth doped chlorosilicates, rare earth doped alkaline earth nitrides, rare earth doped oxynitrides, and aluminoxinitrides doped with rare earth metals.
  • the wavelength conversion substance 8 of the wavelength-converting layer is presently incorporated in a binder 9, for example silicone.
  • the wavelength conversion substance 8 may also be applied to the mirror 3 by means of electrophoresis in the form of a layer.
  • the mirror 3 is presently designed as a layer sequence.
  • the layer sequence of the mirror 3 comprises a metallic layer 10, which for example comprises aluminum or consists of aluminum, and a Bragg mirror 11.
  • the metallic layer 10 points to the heat sink 2, while the Bragg mirror 11 forms the surface of the mirror 3.
  • the mirror 3 in this case has a reflectance of at least 0.98 for visible radiation.
  • the surface of the mirror 3 is formed very smooth, that is, that roughness peaks of the mirror 3 have at most a height of 40 nm.
  • the mirror 3 is presently at least in the outer region 7, which is free of the wavelength-converting layer 4, specularly reflective for radiation of the first and the second
  • the inner region 6 of the mirror 3 is circular with a radius R 1 'formed, while the outer region 7 of the mirror 3, the circular inner region 6 rotates as a circular ring.
  • the annular outer region 7 has an inner radius R 1 'and an outer radius R 2 '.
  • the semiconductor body 1 is arranged centered on the inner region 6 of the mirror 3, that is to say that the centroid M of the present rectangularly formed radiation passage side of the semiconductor body 1 and the centroid of the circular inner region 6 lie on an optical axis of the optoelectronic component, the optical axis being perpendicular standing on the mirror.
  • the scattering body 12 Arranged above the semiconductor body 1 is a scattering body 12, which in the present case is in the form of scattered castings.
  • the scattering body 12 has the shape of a hemisphere with radius R 1 .
  • the scattering body 12 is arranged centered over the semiconductor body 1, that is to say that the centroid M of the radiation passage side of the rectangular semiconductor body 1 and the center of the hemisphere formed by the scattering body 12 lie on the optical axis of the optoelectronic component. Furthermore, the radius R 1 of the scattering body 12 coincide with the radius R 1 'of the circular inner region 6.
  • the scattering body 12 therefore terminates laterally with the wavelength-converting layer 4. The entire wavelength-converting layer 4 is thus located below the scattering body 12.
  • the scattering body 12 comprises scattering particles scattering for light scattering 13, which comprise, for example, aluminum oxide or titanium oxide or consist of one of these two materials.
  • the scattering particles 13 preferably have a diameter of between 20 nm and 20 ⁇ m, the limits being included.
  • the optoelectronic component according to the exemplary embodiment of FIG. 1A has a coupling-out lens 14, which is arranged above the scattering body 12.
  • the coupling-out lens 14 is in direct contact with the scattering body 12, that is, the coupling-out lens 14 forms a common interface with the scattering body 12.
  • the coupling-out lens 14 is formed in the manner of a hemisphere shell with an inner radius R 1 and an outer radius R 2 , the inner radius Ri of the coupling-out lens 14 coinciding with the radius Ri of the scattering body 12.
  • Auskoppellinse 14 further terminates laterally with the outer region 7 of the mirror 3, which is free of the wavelength-converting layer 4.
  • the outer radius R 2 of the coupling-out lens 14 thus coincides with the outer radius R 2 'of the annular outer region.
  • the coupling-out lens 14 is arranged centered over the semiconductor body 1, that is to say that the center of the hemispherical shell formed by the coupling-out lens 14 and the area center of gravity M of the
  • Radiation passage side of the semiconductor body 1 lie on the optical axis of the optoelectronic component.
  • the optical axis 15 of the optoelectronic component runs through the centroid M of the radiation passage side of the semiconductor body 1. Since the scattering body 12 and the coupling lens 14 are arranged centered over the semiconductor body 1, the scattering body 12 and the coupling lens 14 are formed rotationally symmetrical to the optical axis 15.
  • the wavelength-converting layer 4 and the mirror 3, or the inner region 6 and the outer region 7 of the mirror 3, are arranged rotationally symmetrical to the optical axis 15.
  • the coupling lens 14 is intended to improve the coupling of electromagnetic radiation from the optoelectronic component.
  • the coupling-out lens 14 fulfills the Weierstrass condition, as explained below.
  • the coupling lens 14 has an inner side 16 which is surrounded by an inner hemispherical surface Hi with radius groove n .
  • the coupling-out lens 14 has an outer side 17, which surrounds an outer hemispherical surface H with radius R aUsen .
  • the coupling-out lens 14 fulfills the Weierstrass condition, that is to say that the radii Rinn e n and R au n e satisfy the following inequality:
  • n refractive index of the lens of the output lens and the refractive index ni runs the air.
  • a radiation-emitting front side 21 of the optoelectronic component is presently formed by the outer side 17 of the coupling lens .
  • the coupling-out lens 14 can be applied to the optoelectronic component, for example by casting. Furthermore, it is also possible that the coupling lens 14 is a separately manufactured element which is mounted on the optoelectronic component.
  • the top view of the optoelectronic component in FIG. 1C further shows two electrical connection points 18, which are provided for electrically contacting the optoelectronic component to the outside.
  • FIG. 2A An exemplary embodiment of a mirror 3, as may be used, for example, in the optoelectronic component according to the exemplary embodiment of FIGS. 1A to 1C, is shown in tabular form in FIG. 2A.
  • the mirror 3 comprises a metallic layer 10, which comprises, for example, aluminum or consists of aluminum, and a Bragg mirror 11.
  • the Bragg mirror 11 is constructed alternately from two titanium oxide layers 19 and two silicon oxide layers 20, that is, one titanium oxide layer each 19 follows a silicon oxide layer 20.
  • the silicon oxide layers 20 have a thickness of 83 nm, while the titanium oxide layers 19 have a thickness of 49 nm.
  • a potting material such as a silicone, with a refractive index of 1.46 is arranged on the mirror 3.
  • Silicon oxide layer 20 and a titanium oxide layer 19 on an aluminum layer 10 (curve 2), and the simulated reflectance of a pure aluminum layer 10 without Bragg mirror 11 (curve 3).
  • the simulations of the reflectance of FIG. 2B show that the reflectance of a layer sequence, as tabulated in FIG. 2A, is substantially greater than 0.98 in the visible spectral range.
  • FIG. 3A shows the simulated course of the Cx coordinate of the color locus and the intensity of the radiation emitted by an optoelectronic component as a function of the emission angle ⁇ , wherein the wavelength-converting layer 4 on the radiation passage side 5 of FIG
  • Semiconductor body 1 is applied.
  • the radiation of the first wavelength range emitted from the semiconductor body 1 has a wavelength of 460 nm
  • the radiation of the second wavelength range into which the wavelength conversion substance 8 converts the radiation of the first wavelength range has a wavelength of 590 nm having.
  • Radiation passage side 5 of the semiconductor body 1 is arranged, an inhomogeneous color location.
  • the radiation emitted by the optoelectronic component appears inside the radiation-emitting front side 21 of the optoelectronic component rather bluish, while the exterior of the radiation-emitting front 21 appears more yellowish.
  • the intensity of such a component is not homogeneous as shown in Figure 3A. Rather, the intensity inside the radiation-emitting front side 21 of the optoelectronic component is higher in the exterior.
  • FIG. 3B shows a simulation of the Cx value of the color locus and of the intensity as a function of the emission angle ⁇ when the wavelength-converting layer 4 is applied laterally to the semiconductor body 1 on a heat sink 2, as in the case of a component according to patent claim 1 and the radiation passage side 5 of the semiconductor body 1 is free from the wavelength-converting layer 4.
  • the Cx value and the intensity are substantially homogeneous with the emission angle ⁇ .
  • Component in which the wavelength-converting layer 4 is applied laterally of the semiconductor body 1 on a heat sink 2 and not on the radiation passage side 5 of the semiconductor body 1 thus has a radiation characteristic with substantially homogeneous intensity and substantially homogeneous color location.
  • FIG. 3C likewise shows the simulation of the dependence of the Cx value on the emission angle ⁇ of an optoelectronic component, in which the wavelength-converting layer 4 is applied laterally to the semiconductor body 1 on a heat sink 2.
  • the course of the Cx value here too is essentially constant with the Emission angle ⁇ .
  • the component thus has a color impression which is essentially independent of the emission angle ⁇ .
  • the optoelectronic component according to FIG. 4A has a plurality of semiconductor bodies 1.
  • the optoelectronic component according to FIG. 4A has a plurality of semiconductor bodies 1.
  • the semiconductor bodies 1 of the component according to FIG. 4A are arranged in a regular pattern, in the present case according to a square grid 22.
  • the semiconductor bodies 1 each lie with a centroid M of the radiation passage side on a grid point of the square grid 22.
  • the semiconductor bodies 1 may, for example, also be arranged according to a hexagonal grid.
  • the semiconductor bodies 1 are arranged centered below the scattering body 12, that is to say that a center of gravity S of the square lattice 22 and the center of the hemisphere shell formed by the scattering body 12 lie on the optical axis of the optoelectronic component.
  • the coupling-out lens 14 is also arranged centered over the semiconductor bodies 1, that is to say that the center of gravity S of the square lattice 22 and the center of the hemisphere shell forming the coupling-out lens 14 lie on the optical axis of the optoelectronic component.
  • the optoelectronic component according to FIG. 4B has a transparent filling body 23.
  • the diffuser body 12 of the optoelectronic component according to FIG. 4B is designed as a hemispherical shell whose outer side is laterally connected to the wavelength-converting element
  • Layer 4 completes.
  • the space between the scattering body 12 and the semiconductor body 1 is filled with a transparent filling body 23, which is free of scattering particles.
  • the transparent filler 23 may be embodied, for example, as a transparent encapsulation and, for example, have silicone and / or epoxy or consist of one of these materials.
  • the transparent filling body 23 preferably completely fills the space between the semiconductor body 1 and the scattering body 12, that is, in particular there are no air-filled areas between the scattering body 12 and the transparent filling body 23.
  • Embodiment of Figure 5A in contrast to the embodiments according to Figures IA to IC and Figures 4A and 4B on a semiconductor body 1 which emits ultraviolet radiation, that is, that the first wavelength range comprises ultraviolet radiation.
  • a wavelength-converting layer 4 which comprises a wavelength conversion substance 8 is arranged.
  • the wavelength conversion substance 8 is suitable for radiation of the first wavelength range in radiation of a second, different from the first
  • the wavelength conversion substance 8 is suitable for converting ultraviolet radiation of the first wavelength range into visible radiation, that is to say the second wavelength range comprises visible radiation.
  • the wavelength conversion substance 8 converts a possibly large proportion of the ultraviolet radiation emitted by the semiconductor body 1 into visible radiation.
  • the semiconductor body 1 is applied to a heat sink 2. Furthermore, a mirror 3 is applied to the heat sink 2 below the wavelength-converting layer 4.
  • the mirror 3 has, like the mirror 3, which has already been described with reference to FIGS. 2A and 2B, a metallic layer 10 and a Bragg mirror 11, which is constructed alternately from two titanium oxide layers 19 and two silicon oxide layers 20.
  • the titanium dioxide layers 19 have a thickness of approximately 40 nm and the silicon dioxide layers 20 have a thickness of approximately 66 nm.
  • FIG. 5B shows, such a layer sequence is particularly suitable for reflecting short-wave radiation.
  • the mirror 3 is presently formed between the semiconductor body 1 and the heat sink 2. Furthermore, the wavelength-converting layer 4 is formed laterally of the semiconductor body 1 over the entire mirror 3. The wavelength-converting layer 4 thus terminates laterally with the mirror 3. In contrast to the component according to FIGS. 1A to 1C, the mirror 3 according to FIG. 5A has no outer region 7 which is free of the wavelength-converting layer 4.
  • Embodiment of Figure 5A is further in contrast to the optoelectronic devices according to the figures IA to IC and according to the figures 4A and 4B free of a scattering body 12th
  • a coupling-out lens 14 is arranged above the semiconductor body 1.
  • the coupling-out lens 14 is designed and arranged such that the entire wavelength-converting layer 4 is located below the coupling-out lens 14.
  • the coupling-out lens 14 preferably terminates laterally with the wavelength-converting layer 4.
  • the coupling-out lens 14 is designed as a thin, deep-drawn glass shell, the space between the coupling-out lens 14 and the semiconductor body 1 being filled with air.
  • the thickness of the deep-drawn glass shell, which in the present case forms the coupling-out lens 14 preferably has a thickness of between 50 ⁇ m and 1 mm, the limits being included.
  • transparent filler 23 is arranged in the space between the coupling-out lens 14 and the semiconductor body 1.
  • the transparent filler body 23 fills in this case the space between Auskoppellinse 14 and semiconductor body 1 substantially completely.
  • the glass of the decoupling lens 14 is presently designed to absorb ultraviolet radiation. This offers the
  • UV radiation-emitting front side 21 of the optoelectronic component which in the present case is formed by the outside 17 of the coupling-out lens 14.
  • Ultraviolet radiation does not contribute to the perceived brightness of the device and may even damage the human eye.
  • a reflective layer sequence 24 is arranged, which is designed to be reflective for the ultraviolet radiation of the semiconductor body 1 and permeable to the visible radiation of the second wavelength range. In the present case, it is the reflective
  • Layer sequence 24 around a dielectric mirror is formed for example by a layer sequence 24, as shown schematically in FIG. 5C.
  • the reflective layer sequence 24 is formed from eight silicon nitride layers and from eight silicon dioxide layers which are arranged alternately.
  • the silicon dioxide layers of the reflective layer sequence 24 in this case have a thickness of approximately 62 nm and the silicon nitride layers have a thickness of approximately 47 nm.
  • the optoelectronic component according to the exemplary embodiment of FIGS. 6A to 6D has, like the component according to FIG. 5A, a semiconductor body 1 which emits ultraviolet radiation and is located on a semiconductor body 1
  • Heat sink 2 is arranged. Furthermore, a mirror 3, which is formed laterally and below the semiconductor body 1, is arranged on the heat sink 2. Laterally of the semiconductor body 1, a wavelength-converting layer 4 is further arranged with a
  • Wavelength conversion substance 8 which converts ultraviolet radiation of the first wavelength range into radiation of a second wavelength range which comprises visible radiation. It is desirable to convert as much of the ultraviolet radiation of the first wavelength range into visible radiation of the second wavelength range.
  • the wavelength-converting layer 4 is arranged on a circular inner region 6 of the mirror 3, while an annular outer region 7 surrounding the inner region is free of the wavelength-converting layer 4.
  • the mirror 3 is in the present case at least within the outer region 7, which is free of the wavelength-converting layer 4, formed specular reflective for visible radiation.
  • the optoelectronic component according to the exemplary embodiment of FIGS. 6A to 6D is free of a scattering body 12.
  • the optoelectronic component according to the exemplary embodiment of FIG. 6A comprises a coupling-out lens 14 which in the present case made of glass.
  • An inner side 16 of the coupling-out lens is curved in such a way that it forms a cavity 25 above the semiconductor body 1.
  • the cavity 25 is formed above the semiconductor body 1 and the wavelength-converting layer 4 such that the inner side 16 of the coupling-out lens 14 terminates laterally with the wavelength-converting layer 4.
  • the wavelength-converting layer 4 is located in its entirety below the cavity 25, which forms the inner side 16 of the coupling-out lens 14 above the semiconductor body 1.
  • the inner side 16 of the coupling-out lens 14 has an inner portion 26 with a tip 27, at which the pitch of the inner side 16 changes.
  • the tip 27 is above the
  • the inner portion 26 of the coupling lens 14 may also have a curvature which is convex with respect to a radiation direction 28 of the coupling-out lens 14.
  • the inner portion 26 of the inner side 16 is circulated by an outer portion 29 which has a concave curvature with respect to the emission direction 28 of the coupling-out lens 14.
  • the inner side 16 of the coupling lens 14 is rotationally symmetrical with respect to the optical axis 15 of the coupling lens 14 is formed.
  • the coupling-out lens 14 has an outer side 17, which in the present case is designed in accordance with a hemispherical surface with a radius R 2 .
  • the outer side 17 of the coupling lens 14 terminates laterally with the mirror 3, that is, the Mirror 3 is located in its entirety below the coupling-out lens 14. Furthermore, the coupling-out lens 14 terminates in the outer region 7 with the mirror 3, that is, the mirror 3 forms a common interface with the mirror 3 in the outer region.
  • the inner side 16 of the coupling lens 14 is provided with a reflective layer 24, which is reflective for radiation of the ultraviolet spectral range and permeable to radiation of the visible spectral range. This may be, for example, a dielectric mirror.
  • the coupling-out lens 14 obeys the Weierstrass condition, as explained below with reference to FIG. 6C.
  • the inner side 16 of the semiconductor body 1 is surrounded by an inner hemispherical surface Hinnen with radius grooves, while the outer side 17 of the coupling lens 14 an outer hemispherical surface H ausse n with radius R ausse n encloses.
  • the inner hemispherical surface H inside touches the inner side 16 at least partially in the outer subregion 29
  • Decoupling lens 14 fulfills the Weierstrass condition, that is, the following inequality holds: • R-outside - gutter H-lens / ⁇ air /
  • n L i n ⁇ e is the refractive index of the coupling-out lens and is the refractive index of the air.
  • the wavelength-converting layer 4 for electrical contacting has an opening 30, through which, for example, a bonding wire can be led from a bonding pad on the radiation passage side 5 of the semiconductor body 1 to the mirror 3.
  • the bonding wire and the bonding pad are not shown in the figure.
  • the optoelectronic component further comprises two external connection points 18.
  • FIGS. 7A to 7D show an exemplary embodiment of a separately produced coupling-out lens 14, as may be used, for example, in the optoelectronic component of FIGS. 6A to 6C.
  • the Auskoppeilinse 14 according to the embodiment of Figures 7A to 7D is intended to be used with an optoelectronic device having a semiconductor body 1, which emits ultraviolet radiation.
  • the optoelectronic component preferably comprises a wavelength-converting layer 4, which is arranged laterally of the semiconductor body 1.
  • the coupling lens 14 has a curved inner side 16, which forms a cavity 25.
  • the cavity 25 is intended to be arranged above the semiconductor body 1 of an optoelectronic component.
  • the inner side 16 of the coupling-out lens 14 has an inner portion 26 with a tip 27 at which the pitch of the inner side 16 changes. In the present case, the tip 27 lies on an optical axis 15 of the coupling lens 14.
  • the inner portion 26 of the coupling lens 14 may also have a curvature which is convex with respect to a radiation direction 28 of the coupling lens 14.
  • the inner portion 26 of the inner side 16 is circulated by an outer portion 29 which has a concave curvature with respect to the emission direction 28 of the coupling-out lens 14.
  • the inner side 16 of the coupling lens 14 is rotationally symmetrical with respect to the optical axis 15 of the coupling lens 14 is formed.
  • the coupling lens 14 has an outer side 17, which in the present case is designed in accordance with a hemispherical surface with a radius R 2 .
  • the coupling-out lens 14 obeys the Weierstrass condition, as explained below.
  • the inside 16 of the coupling-out lens 14 obeys the Weierstrass condition, as explained below.
  • the semiconductor body 1 is of an inner hemispherical surface of radius Ri Hinn s n s is enclosed, while the outside 17 of the output lens 14 outside an outer hemispherical surface H with radius R outer wraps.
  • the inner hemispherical surface H inn touches the inner side 16 of at least 29, partly in the outer portion, the output lens 14 satisfies the Weierstrass condition, that is, it is the following inequality:
  • n lens is the refractive index of the coupling lens 14 and n iU f t is the refractive index of the air.
  • the inner side 16 of the coupling-out lens 14 is provided with a reflective layer 24, which is designed to be reflective of radiation of the ultraviolet spectral range and transmissive to radiation of the visible spectral range. This may be, for example, a dielectric mirror.
  • the coupling lens 14 may have a radius R 2 of 3.9 mm.
  • the cavity 25 has, for example, a circular base area with a diameter of 5.17 mm, while the maximum height of the cavity 25 is, for example, 0.85 mm.
  • the minimum height of the cavity 25 at its tip 27 has, for example, 0.65 mm.
  • the coupling-out lens 14 is preferably made of a material that is absorbent for ultraviolet radiation, such as glass.
  • the coupling lens 14 may for example be rotated, milled or manufactured by injection molding.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un composant optoélectronique comportant les éléments caractéristiques suivants: - au moins un corps semi-conducteur (1) prévu pour émettre un rayonnement électromagnétique appartenant à une première plage de longueurs d'ondes, - un dissipateur de chaleur (2) sur lequel sont disposés le corps semi-conducteur (1) et un miroir (3), et - une couche à conversion de longueurs d'ondes (4) disposée sur le miroir (3), côté corps semi-conducteur (1) et comprenant un matériau à conversion de longueurs d'ondes (8) conçu pour prendre au moins une partie du rayonnement émis dans la première plage de longueurs d'ondes par le corps semi-conducteur (1) et la transposer dans une seconde plage de longueurs d'ondes. L'invention concerne également une lentille de découplage (14) pour un composant optoélectronique.
PCT/DE2008/001511 2007-09-28 2008-09-05 Composant optoélectronique et lentille de découplage pour composant optoélectronique WO2009039824A2 (fr)

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DE102007046698.8 2007-09-28
DE102007046698 2007-09-28
DE102007059548A DE102007059548A1 (de) 2007-09-28 2007-12-11 Optoelektronisches Bauelement und Auskoppellinse für ein optoelektronisches Bauelement
DE102007059548.6 2007-12-11

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