WO2009039824A3 - Composant optoélectronique et lentille de découplage pour composant optoélectronique - Google Patents
Composant optoélectronique et lentille de découplage pour composant optoélectronique Download PDFInfo
- Publication number
- WO2009039824A3 WO2009039824A3 PCT/DE2008/001511 DE2008001511W WO2009039824A3 WO 2009039824 A3 WO2009039824 A3 WO 2009039824A3 DE 2008001511 W DE2008001511 W DE 2008001511W WO 2009039824 A3 WO2009039824 A3 WO 2009039824A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optoelectronic component
- semiconductor body
- wavelength range
- wavelength
- radiation
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 230000005855 radiation Effects 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Photovoltaic Devices (AREA)
Abstract
La présente invention concerne un composant optoélectronique comportant les éléments caractéristiques suivants: - au moins un corps semi-conducteur (1) prévu pour émettre un rayonnement électromagnétique appartenant à une première plage de longueurs d'ondes, - un dissipateur de chaleur (2) sur lequel sont disposés le corps semi-conducteur (1) et un miroir (3), et - une couche à conversion de longueurs d'ondes (4) disposée sur le miroir (3), côté corps semi-conducteur (1) et comprenant un matériau à conversion de longueurs d'ondes (8) conçu pour prendre au moins une partie du rayonnement émis dans la première plage de longueurs d'ondes par le corps semi-conducteur (1) et la transposer dans une seconde plage de longueurs d'ondes. L'invention concerne également une lentille de découplage (14) pour un composant optoélectronique.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007046698 | 2007-09-28 | ||
DE102007046698.8 | 2007-09-28 | ||
DE102007059548.6 | 2007-12-11 | ||
DE102007059548A DE102007059548A1 (de) | 2007-09-28 | 2007-12-11 | Optoelektronisches Bauelement und Auskoppellinse für ein optoelektronisches Bauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009039824A2 WO2009039824A2 (fr) | 2009-04-02 |
WO2009039824A3 true WO2009039824A3 (fr) | 2009-10-15 |
Family
ID=40384477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2008/001511 WO2009039824A2 (fr) | 2007-09-28 | 2008-09-05 | Composant optoélectronique et lentille de découplage pour composant optoélectronique |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE102007059548A1 (fr) |
TW (1) | TW200921952A (fr) |
WO (1) | WO2009039824A2 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5343831B2 (ja) * | 2009-04-16 | 2013-11-13 | 日亜化学工業株式会社 | 発光装置 |
US9159885B2 (en) | 2010-12-29 | 2015-10-13 | 3M Innovative Properties Company | Remote phosphor LED device with broadband output and controllable color |
WO2012091975A1 (fr) * | 2010-12-29 | 2012-07-05 | 3M Innovative Properties Company | Ensemble réflecteur de substance luminescente destiné à un dispositif à diodes électroluminescentes à substance luminescente distant |
CN103283048B (zh) * | 2010-12-29 | 2017-04-12 | 3M创新有限公司 | 远程荧光粉led的构造 |
DE102011003969B4 (de) | 2011-02-11 | 2023-03-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Bauelements |
IN2014CN02633A (fr) * | 2011-10-14 | 2015-06-26 | 3M Innovative Properties Co | |
DE102011116752A1 (de) * | 2011-10-24 | 2013-04-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Streumittel |
JP2015523722A (ja) * | 2012-06-01 | 2015-08-13 | スリーエム イノベイティブ プロパティズ カンパニー | 遠隔蛍光体ledと直接放射ledの組合せを使用するハイブリッド電球 |
DE202013101400U1 (de) * | 2013-04-02 | 2014-07-03 | Zumtobel Lighting Gmbh | Anordnung zum Konvertieren des von einer LED-Lichtquelle emittierten Lichts |
DE102014100991A1 (de) | 2014-01-28 | 2015-07-30 | Osram Opto Semiconductors Gmbh | Lichtemittierende Anordnung und Verfahren zur Herstellung einer lichtemittierenden Anordnung |
US10741735B2 (en) * | 2014-06-02 | 2020-08-11 | 3M Innovative Properties Company | LED with remote phosphor and shell reflector |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000347601A (ja) * | 1999-06-02 | 2000-12-15 | Toshiba Electronic Engineering Corp | 発光装置 |
JP2001076511A (ja) * | 1999-09-01 | 2001-03-23 | Stanley Electric Co Ltd | 車両用灯具 |
DE10038213A1 (de) * | 2000-08-04 | 2002-03-07 | Osram Opto Semiconductors Gmbh | Strahlungsquelle und Verfahren zur Herstellung einer Linsensform |
EP1187228A1 (fr) * | 2000-02-09 | 2002-03-13 | Nippon Leiz Corporation | Source lumineuse |
DE10065381A1 (de) * | 2000-12-27 | 2002-07-11 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
US20030107316A1 (en) * | 2001-12-07 | 2003-06-12 | Gen Murakami | Light-emitting unit and method for producing same as well as lead frame used for producing light-emitting unit |
EP1381091A2 (fr) * | 2002-07-12 | 2004-01-14 | Stanley Electric Co., Ltd. | Led |
US20040164310A1 (en) * | 2002-09-18 | 2004-08-26 | Toyoda Gosei Co., Ltd. | Light-emitting device |
US20050067681A1 (en) * | 2003-09-26 | 2005-03-31 | Tessera, Inc. | Package having integral lens and wafer-scale fabrication method therefor |
EP1653254A2 (fr) * | 2004-10-18 | 2006-05-03 | Samsung Electronics Co., Ltd. | Diode electroluminescente et lentille associé |
US20060203468A1 (en) * | 2004-03-30 | 2006-09-14 | Goldeneye, Inc. | Light recycling illumination systems with wavelength conversion |
US20060291246A1 (en) * | 2005-06-22 | 2006-12-28 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
WO2007052777A1 (fr) * | 2005-11-04 | 2007-05-10 | Matsushita Electric Industrial Co., Ltd. | Module électroluminescent, unité d'affichage et unité d'éclairage utilisant celui-ci |
WO2008086682A1 (fr) * | 2007-01-15 | 2008-07-24 | Hong Kong Applied Science And Technology_Research Institute Co. Ltd. | Dispositif électroluminescent et lentille associée |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2581778Y2 (ja) * | 1993-12-21 | 1998-09-24 | 株式会社小糸製作所 | 車輌用標識灯 |
US5684309A (en) | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
CN100485985C (zh) | 1997-01-09 | 2009-05-06 | 日亚化学工业株式会社 | 氮化物半导体元器件 |
US5831277A (en) | 1997-03-19 | 1998-11-03 | Northwestern University | III-nitride superlattice structures |
DE19955747A1 (de) | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
DE10101554A1 (de) | 2001-01-15 | 2002-08-01 | Osram Opto Semiconductors Gmbh | Lumineszenzdiode |
US6791116B2 (en) * | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
DE60330023D1 (de) * | 2002-08-30 | 2009-12-24 | Lumination Llc | Geschichtete led mit verbessertem wirkungsgrad |
JP4040955B2 (ja) * | 2002-11-06 | 2008-01-30 | 株式会社小糸製作所 | 車両用前照灯及びその製造方法 |
DE102004047640A1 (de) | 2004-09-30 | 2006-04-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement |
WO2006109113A2 (fr) * | 2005-04-12 | 2006-10-19 | Acol Technologies Sa | Optique primaire pour diode electroluminescente |
US7382091B2 (en) * | 2005-07-27 | 2008-06-03 | Lung-Chien Chen | White light emitting diode using phosphor excitation |
JP4993434B2 (ja) * | 2005-11-18 | 2012-08-08 | スタンレー電気株式会社 | 白色led照明装置 |
-
2007
- 2007-12-11 DE DE102007059548A patent/DE102007059548A1/de not_active Withdrawn
-
2008
- 2008-09-05 WO PCT/DE2008/001511 patent/WO2009039824A2/fr active Application Filing
- 2008-09-10 TW TW97134665A patent/TW200921952A/zh unknown
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000347601A (ja) * | 1999-06-02 | 2000-12-15 | Toshiba Electronic Engineering Corp | 発光装置 |
JP2001076511A (ja) * | 1999-09-01 | 2001-03-23 | Stanley Electric Co Ltd | 車両用灯具 |
EP1187228A1 (fr) * | 2000-02-09 | 2002-03-13 | Nippon Leiz Corporation | Source lumineuse |
DE10038213A1 (de) * | 2000-08-04 | 2002-03-07 | Osram Opto Semiconductors Gmbh | Strahlungsquelle und Verfahren zur Herstellung einer Linsensform |
DE10065381A1 (de) * | 2000-12-27 | 2002-07-11 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
US20030107316A1 (en) * | 2001-12-07 | 2003-06-12 | Gen Murakami | Light-emitting unit and method for producing same as well as lead frame used for producing light-emitting unit |
EP1381091A2 (fr) * | 2002-07-12 | 2004-01-14 | Stanley Electric Co., Ltd. | Led |
US20040164310A1 (en) * | 2002-09-18 | 2004-08-26 | Toyoda Gosei Co., Ltd. | Light-emitting device |
US20050067681A1 (en) * | 2003-09-26 | 2005-03-31 | Tessera, Inc. | Package having integral lens and wafer-scale fabrication method therefor |
US20060203468A1 (en) * | 2004-03-30 | 2006-09-14 | Goldeneye, Inc. | Light recycling illumination systems with wavelength conversion |
EP1653254A2 (fr) * | 2004-10-18 | 2006-05-03 | Samsung Electronics Co., Ltd. | Diode electroluminescente et lentille associé |
US20060291246A1 (en) * | 2005-06-22 | 2006-12-28 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
WO2007052777A1 (fr) * | 2005-11-04 | 2007-05-10 | Matsushita Electric Industrial Co., Ltd. | Module électroluminescent, unité d'affichage et unité d'éclairage utilisant celui-ci |
WO2008086682A1 (fr) * | 2007-01-15 | 2008-07-24 | Hong Kong Applied Science And Technology_Research Institute Co. Ltd. | Dispositif électroluminescent et lentille associée |
Also Published As
Publication number | Publication date |
---|---|
DE102007059548A1 (de) | 2009-04-02 |
TW200921952A (en) | 2009-05-16 |
WO2009039824A2 (fr) | 2009-04-02 |
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