WO2009031349A1 - カーボンナノチューブ膜を用いる半導体装置及びその製造方法 - Google Patents

カーボンナノチューブ膜を用いる半導体装置及びその製造方法 Download PDF

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Publication number
WO2009031349A1
WO2009031349A1 PCT/JP2008/060415 JP2008060415W WO2009031349A1 WO 2009031349 A1 WO2009031349 A1 WO 2009031349A1 JP 2008060415 W JP2008060415 W JP 2008060415W WO 2009031349 A1 WO2009031349 A1 WO 2009031349A1
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Prior art keywords
semiconductor device
layer
layer cnt
metal
producing
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PCT/JP2008/060415
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English (en)
French (fr)
Inventor
Hidefumi Hiura
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Nec Corporation
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Priority to JP2009531154A priority Critical patent/JP5347964B2/ja
Publication of WO2009031349A1 publication Critical patent/WO2009031349A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

　本発明は、単層ＣＮＴ膜を構成する個々の単層ＣＮＴ間を金属で架橋することにより、透明性が確保され、従来技術よりシート抵抗が低い単層ＣＮＴ膜からなる電極や配線を有する半導体装置、ならびに、透明性を保持しつつ、単位幅当たりのオン電流とオン／オフ比が同時に増大され得るＣＮＴ膜チャネルを持つ半導体装置、及びその製造方法を提供する。 　発明の半導体装置は、多数の単層ＣＮＴが互いに接続した膜からなる電極、配線、またはチャネルを有する。単層ＣＮＴ膜からなる電極、配線、チャネルは、隣接する単層ＣＮＴ同士が金属で架橋される。本発明の半導体装置の製造方法は、単層ＣＮＴ膜を形成する工程と、単層ＣＮＴ表面に還元性を付与する工程と、単層ＣＮＴの還元性により、金属イオン（Ｍ＋）を中性金属原子（Ｍ０）に還元する工程と、還元された金属原子を核として金属粒子へ成長させ、隣接する単層ＣＮＴ同士を架橋する工程からなる。
PCT/JP2008/060415 2007-09-07 2008-06-06 カーボンナノチューブ膜を用いる半導体装置及びその製造方法 WO2009031349A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009531154A JP5347964B2 (ja) 2007-09-07 2008-06-06 カーボンナノチューブ膜を用いる半導体装置及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-232596 2007-09-07
JP2007232596 2007-09-07

Publications (1)

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WO2009031349A1 true WO2009031349A1 (ja) 2009-03-12

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JP (1) JP5347964B2 (ja)
WO (1) WO2009031349A1 (ja)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009290219A (ja) * 2008-05-30 2009-12-10 Qinghua Univ 薄膜トランジスタの製造方法
JP2011088813A (ja) * 2009-10-23 2011-05-06 Qinghua Univ カーボンナノチューブ複合材料体
JP2011129883A (ja) * 2009-12-18 2011-06-30 Qinghua Univ 電気二重層コンデンサー
WO2012029234A1 (ja) * 2010-09-03 2012-03-08 国立大学法人名古屋大学 カーボンナノチューブを用いた電界効果トランジスタ及びその製造方法
JP2012074646A (ja) * 2010-09-30 2012-04-12 Kuraray Co Ltd 配線形成方法、及び配線
JP2013527790A (ja) * 2010-03-04 2013-07-04 ガーディアン・インダストリーズ・コーポレーション 合金化カーボンナノチューブ薄膜を含む被覆物品の製造方法
US8810995B2 (en) 2009-10-23 2014-08-19 Tsinghua University Carbon nanotube composite, method for making the same, and electrochemical capacitor using the same
JP2014150173A (ja) * 2013-02-01 2014-08-21 Honda Motor Co Ltd 電界効果トランジスタ
JP2015038727A (ja) * 2010-03-04 2015-02-26 ガーディアン・インダストリーズ・コーポレーション カーボンナノチューブ及びナノワイヤー複合体を含有する透明導電性コーティングを含む電子デバイス、及びその製造方法
TWI501916B (zh) * 2009-12-18 2015-10-01 Hon Hai Prec Ind Co Ltd 奈米碳管複合材料之製備方法
JP2017514776A (ja) * 2014-03-10 2017-06-08 ザ・ボーイング・カンパニーＴｈｅ Ｂｏｅｉｎｇ Ｃｏｍｐａｎｙ グラフェンコーティングされた電子部品
CN112652425A (zh) * 2020-07-27 2021-04-13 邵峥业 一种碳纳米管复合透明导电薄膜的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005089165A2 (en) * 2004-03-10 2005-09-29 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
WO2005094298A2 (en) * 2004-03-26 2005-10-13 Foster-Miller, Inc. Carbon nanotube-based electronic devices made by electronic deposition and applications thereof
JP2005332612A (ja) * 2004-05-18 2005-12-02 Jfe Engineering Kk カーボンナノチューブ電極とその製造方法
JP2007115868A (ja) * 2005-10-20 2007-05-10 Fujitsu Ltd 熱拡散シート及び半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4412052B2 (ja) * 2003-10-28 2010-02-10 富士ゼロックス株式会社 複合材およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005089165A2 (en) * 2004-03-10 2005-09-29 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
WO2005094298A2 (en) * 2004-03-26 2005-10-13 Foster-Miller, Inc. Carbon nanotube-based electronic devices made by electronic deposition and applications thereof
JP2005332612A (ja) * 2004-05-18 2005-12-02 Jfe Engineering Kk カーボンナノチューブ電極とその製造方法
JP2007115868A (ja) * 2005-10-20 2007-05-10 Fujitsu Ltd 熱拡散シート及び半導体装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009290219A (ja) * 2008-05-30 2009-12-10 Qinghua Univ 薄膜トランジスタの製造方法
US8810995B2 (en) 2009-10-23 2014-08-19 Tsinghua University Carbon nanotube composite, method for making the same, and electrochemical capacitor using the same
JP2011088813A (ja) * 2009-10-23 2011-05-06 Qinghua Univ カーボンナノチューブ複合材料体
TWI501916B (zh) * 2009-12-18 2015-10-01 Hon Hai Prec Ind Co Ltd 奈米碳管複合材料之製備方法
JP2011129883A (ja) * 2009-12-18 2011-06-30 Qinghua Univ 電気二重層コンデンサー
JP2013527790A (ja) * 2010-03-04 2013-07-04 ガーディアン・インダストリーズ・コーポレーション 合金化カーボンナノチューブ薄膜を含む被覆物品の製造方法
JP2015038727A (ja) * 2010-03-04 2015-02-26 ガーディアン・インダストリーズ・コーポレーション カーボンナノチューブ及びナノワイヤー複合体を含有する透明導電性コーティングを含む電子デバイス、及びその製造方法
WO2012029234A1 (ja) * 2010-09-03 2012-03-08 国立大学法人名古屋大学 カーボンナノチューブを用いた電界効果トランジスタ及びその製造方法
JP2012074646A (ja) * 2010-09-30 2012-04-12 Kuraray Co Ltd 配線形成方法、及び配線
JP2014150173A (ja) * 2013-02-01 2014-08-21 Honda Motor Co Ltd 電界効果トランジスタ
JP2017514776A (ja) * 2014-03-10 2017-06-08 ザ・ボーイング・カンパニーＴｈｅ Ｂｏｅｉｎｇ Ｃｏｍｐａｎｙ グラフェンコーティングされた電子部品
CN112652425A (zh) * 2020-07-27 2021-04-13 邵峥业 一种碳纳米管复合透明导电薄膜的制备方法
CN112652424A (zh) * 2020-07-27 2021-04-13 邵峥业 碳纳米管复合透明导电薄膜的制备方法

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